CN101066836A - TFT-base plate glass - Google Patents
TFT-base plate glass Download PDFInfo
- Publication number
- CN101066836A CN101066836A CNA2007100545484A CN200710054548A CN101066836A CN 101066836 A CN101066836 A CN 101066836A CN A2007100545484 A CNA2007100545484 A CN A2007100545484A CN 200710054548 A CN200710054548 A CN 200710054548A CN 101066836 A CN101066836 A CN 101066836A
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- China
- Prior art keywords
- glass
- oxide
- tft
- base plate
- lcd
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-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Abstract
The TFT base plate glass consists of SiO2 55-62 wt%, Al2O3 13-20 wt%, B2O3 8-12 wt%, ZrO2 0.1-4 wt%, CaO 3.5-8 wt%, MgO 0.1-5 wt%, SrO 2-6 wt%, BaO 1-4.0 wt%, ZnO 0.1-1 wt%, GeO2 0.1-2 wt%, V2O5 0-0.8 wt% and La2O3 0.1-2 wt%, as well as Sb2O3 0.1-0.3 wt% or CeO2 0.1-0.3 wt%. It has high performance and is used in producing base plate f TFT-LCD. It has thermal expansion coefficient at 25-400 deg.c of 40x10<-7>/ deg.c, strain point higher than 650 deg.c, transition point higher than 710 deg.c, Ritter softening point higher than 900 deg.c, density lower than 2.55 g/cu mm, and visible light transmission rate not lower than 90 %.
Description
Technical field
The invention belongs to the glass technology field, what relate generally to is a kind of TFT base plate glass.
Background technology
Indicating meter plays crucial effect as the terminal that information shows in the information society construction.Since the nineties in 20th century, flat display technology emerges rapidly, and progressively substitutes CRT with its unique charm (thin, light, power consumption is little, radiation is low, flicker etc.).China advances to the demand of the flat-panel monitor speed with annual growth 20% as an emerging electronic industry production and consumption big country, and since in the state-owned huge market space support, this tempo can continue a very long period.Dull and stereotyped LCD display is divided into three types on TN type, STN type and TFT (Thin film transistor) type.Compare for these three types, TFT type LCD contrast gradient height, reaction fast and the visual angle wider etc., its image display quality is good than TN, STN type, can compare with CRT on the effects such as response speed, colored degree.Therefore TFT-LCD gradually becomes the main flow of flat-panel monitor, accounts for more than 70% of global flat-panel monitor.
The production line of TFT-LCD panel can be divided into generation line, two generation line, three generations's line, four generation line, five generation line, six generation line, seven generation line and development the 8th generation so far.Generation line TFT glass substrate is of a size of 300mm * 350mm, can cut into 1 15 cun LCD monitor panel; Two generation line TFT glass substrates are of a size of 370mm * 470mm, can cut into 1 LCD monitor panel below 19 cun; Third generation production line TFT glass substrate is of a size of 550mm * 650mm, can cut into 4 15 cun LCD monitor panels; The glass substrate in the 4th generation is of a size of 680mm * 880mm, can cut into 6 15 cun panels; The 5th generation line production substrate size is 1100 * 1250mm, can cut 12 17 cun panels or 6 24 inches panels; The 6th generation line produce substrate size be 1370 * 1670mm (or 1500 * 1800mm), can cut 6 30 cun panels; The 7th generation line production substrate size is 1950 * 2250mm, can cut 12 30 cun panels or 8 40 inches panels; The 8th generation size bigger.TFT panel size from generation to generation constantly amplifies, and requires glass toward thin development simultaneously.And glass is ultra-thin, will consider the fragility of glass, and this just has higher requirement to the production of TFT base plate glass.
China has become the important production base that TFT shows product (TFT-LCD panel) at present.But the TFT-LCD display base plate not only requires glass size big with glass, but also requires glass weight light, and this just requires the glass density must be low, meanwhile also to require to change glass other performance, can not reduce glass intensity; The TFT substrate requires strain point, the softening temperature height of glass, and the coefficient of expansion is low, also wants glass melting, clarifying temp can not be too high, and glass has suitable high temperature viscosity discharges bubble fully, obtains the flawless glass of high quality.With this high performance requirement of glass, glass ingredient and Technology complexity make the domestic family and the supporting glass substrate manufacturing enterprise of TFT-LCD that also do not have, can only dependence on import just because of the TFT substrate.
Domestic Guangdong Jingang Glass Science ﹠. Technology Co., Ltd. has applied for " the ultra-thin alkali-free glass substrate of TFT " patent, records and narrates their thermal expansion coefficient of glass≤5.0 * 10 in the patent
-7/ ℃, density≤2.8g/mm
3, specific refractory power≤1.55, strain point 〉=600 ℃, softening temperature 〉=820 ℃, transmission of visible light 〉=88%.
In the disclosed patent documentation:
US4824808 (Corning Works) number patent disclosure a kind of non-alkali glass constituent, the melt viscosity height of its glass component, and strain point is lower.
The non-alkali glass of US5116787 patent disclosure is formed and is had high strain-point, but it resists the stable low of crystallization for a long time, and the coefficient of expansion is too high, can't with the silicon matched coefficients of thermal expansion.
The glass of US5116789 patent disclosure is formed and is had the characteristic of high strain-point, but its coefficient of expansion is high too, can't with the silicon matched coefficients of thermal expansion.
The non-alkali glass of US6128924, US6319867 (Corning Works) number patent disclosure is formed, and has good base plate glass characteristic, yet fails effectively to improve to compare young's modulus.
The patented technology that also has in addition is to make characteristics such as glass substrate lightweight, low thermal expansivity and Nai Gaore, all to increase SiO
2Percentage composition be solution.Yet, so can increase the temperature and the fusing time of glass melting, cause degradation problem under the waste of the energy and the production capacity.
Because TFT-LCD will be through Overheating Treatment in the course of processing, alkalimetal ion will be diffused in the sedimentary semiconductor material in the glass in heat-processed, can destroy the characteristic of film, therefore requiring the TFT base plate glass is alkali-free metal oxide (Lithium Oxide 98min, sodium oxide, potassium oxide).Alkalimetal oxide has fluxing action, and the glass of alkali-free metal oxide has just increased the difficulty of glass melting.In order to overcome the difficult problem of fusing, in glass batch, need to select to introduce B
2O
3, be boron, aluminium, silicate glass.
Because the processing of TFT-LCD needs a plurality of heat treatment steps, make sheet glass stand cooling and rapid heating fast repeatedly, thermal shocking to sheet glass is bigger like this, the face glass of large-size particularly, there is temperature distribution difference, in heat treatment process, very easily crack, thereby cause fragmentation at the glass section; Or when being heated the internal stress of glass self, be not enough to offset the glass expanded by heating and the thermal stresses that produces and breaking.Thereby the thermal expansivity of consideration reduction glass, preferably (thermal expansivity of p-Si is 30-33 * 10 in the thermal expansion of the thermal expansion of base plate glass and the sedimentary thin-film-transistor material of wanting
-7℃) approaching, can keep away the angle in heat-processed because the bending that the difference of the two thermal expansion forms.Therefore require the thermal expansivity of glass in 25～400 ℃ of scopes less than 40 * 10
-7/ ℃.
Because in the film deposition process of TFT-LCD, distortion and warpage occur if base plate glass is heated, will make the indicating meter pattern error occur, must guarantee that glass has sufficiently high resistance to elevated temperatures, the strain temperature of glass should be higher than 600 ℃, and is best more than 650 ℃.
Because the glass ingredient that this patent is invented is alkali-free metal oxide (Lithium Oxide 98min, sodium oxide, a potassium oxide), founds difficulty, for ease of glass production, the clarifying temp that makes this glass is below 1650 ℃.
Because in the course of processing of TFT-LCD, glass is horizontal positioned, and glass has to a certain degree sagging under the self gravitation effect, and sagging degree is directly proportional with the density of glass itself, is inversely proportional to the Young's modulus of glass.Therefore when glass being had try one's best high Young's modulus and alap density, also to consider the crystallization property etc. in the physical strength, Young's modulus, moulding process of glass.
For satisfying the high performance requirements in the TFT-LCD course of processing, TFT also should have good chemical stability, makes it withstand the immersion and the erosion of number of chemical solution in the course of processing.This specification of quality that is used for the glass of indicating meter is strict, and defectives such as small bubble, calculus, brush line, surface crater and injurious surface mark all can make indicating meter error occur, influence picture quality.And the glass melting temperature of non-alkali glass is higher, the raw material fusing is difficult, the glass viscosity air pocket is difficult for discharging, found without any the high quality glass difficulty of tiny flaw very big, though add a certain amount of alkaline-earth metal, the component of effectively fluxing as glass, but content can not be too high, the thermal expansivity of the density of too high easy increase glass, the softening temperature that reduces glass, increase glass.
Summary of the invention
The purpose of this invention is to provide a kind of TFT base plate glass.It is had than high Young's modulus and strain point, lower thermal expansivity and density and chemistry-resistant characteristic preferably.
The present invention realizes that the technical scheme that above-mentioned purpose is taked is: it mainly is made up of the component of following weight, 55～62% silicon-dioxide (SiO
2), 13～20% aluminium sesquioxide (Al
2O
3), 8～12% boron trioxide (B
2O
3), 0.1～4% zirconium dioxide (ZrO
2), 3.5～8% calcium oxide (CaO), 0.1～5% magnesium oxide (MgO), 2～6% strontium oxide (SrO), 1～4.0% barium oxide (BaO), 0.1～1% zinc oxide (ZnO), 0.1～2% germanium dioxide (GeO
2), 0～0.8% Vanadium Pentoxide in FLAKES (V
2O
5) and 0.1～2% lanthanum sesquioxide (La
2O
3), add the antimonous oxide (Sb of 0.1-0.3% in addition
2O
3) or 0.1-0.3% cerium oxide (CeO
2).
In the component of the present invention: silicon-dioxide (SiO
2) be the main component in the base plate glass component, weight percent is between 55～62%.SiO
2The skeleton of forming glass improves SiO
2Content the density of glass and thermal expansivity are reduced, but content is higher than at 62% o'clock, and the fusing of glass and clarification just require higher temperature and time, cause energy dissipation and output to descend.SiO
2Content is lower than at 55% o'clock, and the strain temperature of glass will reduce.
Aluminium sesquioxide (Al
2O
3) weight percent between 13～20%.Al
2O
3In certain content range and SiO
2Be the main body that glass network forms, Al
2O
3Can improve chemical stability, thermostability and the physical strength of glass.Work as Al
2O
3During excessive concentration, the viscosity of glass increases, and is unfavorable for the homogenizing of glass; Influence glass intensity and strain temperature when too low.
Boron trioxide (B
2O
3) be to improve the thermostability of glass and the active principle of chemical stability, B
2O
3Be again good fusing assistant, the effect that play and flux, reduce glass viscosity, reduces the glass swelling coefficient.Simultaneously, B
2O
3Also can reduce the crystallization property of glass.But too high levels, greater than 12% o'clock, the strain point of glass was too low, less than 8% o'clock, made the glass melting difficulty, and can not effectively reduce the thermal expansivity of glass.
Zirconium dioxide (ZrO
2) can improve the strain point temperature of glass effectively, and can improve the water tolerance of glass, but content is greater than 4% o'clock, temperature of fusion increases thereupon, and is easy to generate the baddeleyite crystallization, influences glass quality.
Zinc oxide (ZnO) can improve the melting capacity of glass effectively, improves the alkali resistance of glass, reduces the density of glass.But it makes the glass melt crystallization property increase easily, and volatilization and can make the lost of life of smelting furnace.Therefore weight percent should be below 1%.
Magnesium oxide (MgO), calcium oxide (CaO), strontium oxide (SrO) and barium oxide (BaO) are alkaline earth metal oxide, can provide glass melting to form the needed positively charged ion of liquid phase, and when the concentration of alkaline earth metal oxide was too low, the viscosity of glass was bigger; When the concentration of alkaline earth metal oxide is too high, can make the thermal expansivity that generates glass too high.
Titanium dioxide storage (GeO
2) be to remove SiO in RO2 one type oxide
2Most important in addition network former.[GeO
4] tetrahedron interlinks with 4, thereby structure is than B
2O
3Glass is firm, but since the Ge-O key than the Si-O key a little less than, because of again than SiO
2The glass difference is a little.Use a small amount of GeO among the present invention
2Substitute SiO
2Reduced the high temperature viscosity of glass, the melting properties of glass has been made moderate progress, but to the not influences such as strain point of glass.
Lanthanum sesquioxide (La
2O
3) easily increase the cancellated characteristic of glass, add La
2O
3Can improve the strain point of glass, increase the Young's modulus of glass.But La
2O
3Being higher than 2% can make the density of glass increase.
Vanadium Pentoxide in FLAKES (V
2O
5) weight percent between between 0～0.8%.A spot of adding Vanadium Pentoxide in FLAKES to the thermal expansivity that reduces glass, improve glass strain point effective, but concentration big can make glass coloring, reduce the light transmission of glass.
Antimonous oxide (Sb
2O
3) and cerium oxide (CeO
2) in the glass smelting process, decompose and emit oxygen, helping the clarification and homogenization of glass, suitable weight percent is for O.1%～0.3%.
The present invention is a kind of and general diverse a kind of new variety of sodium-calcium-silicate float glass, and it is a kind of boron, aluminium, silicate glass of alkali-free metal.By adding Ca, Mg, Zr, Sr, Ba, particularly add some physical and chemical performances that Ge, V and La regulate glass, add Sb
2O
3Or CeO
2Make glass obtain good clarification, make the requirement of its suitable TFT-LCD processing: alkali-free, have higher softening temperature, thermal shock resistance, the low density of trying one's best and high Young's modulus, chemical resistance etc. preferably preferably.Can satisfy any performance requriements in the TFT-LCD course of processing as the substrate of membrane transistor liquid-crystal display (TFT-LCD).At 25 ℃～400 ℃ thermal expansivity less than 40 * 10
-7/ ℃, strain point is more than 650 ℃, and transition point is more than 710 ℃, and the special softening temperature in lining is greater than 900 ℃, and density is less than 2.55g/mm
3, visible light transmissivity is not less than 90%.
Embodiment
The embodiment that below provides will the present invention is further described.
Embodiment 1
Present embodiment is made up of the component of following weight, 61.08% silicon-dioxide (SiO
2), 14.7% aluminium sesquioxide (Al
2O
3), 9.54% boron trioxide (B
2O
3), 0.96% zirconium dioxide (ZrO
2), 0.3% zinc oxide (ZnO), 1.88% magnesium oxide (MgO), 5.94% calcium oxide (CaO), 2.30% strontium oxide (SrO), 1% barium oxide (BaO), 0.5% germanium dioxide (GeO
2), 0.3% Vanadium Pentoxide in FLAKES (V
2O
5), 1.2% lanthanum sesquioxide (La
2O
3) and 0.3% antimonous oxide (Sb
2O
3).
Embodiment 2
Present embodiment is made up of the component of following weight, 60.08% silicon-dioxide (SiO
2), 15.0% aluminium sesquioxide (Al
2O
3), 10.54% boron trioxide (B
2O
3), 0.96% zirconium dioxide (ZrO
2), 0.3% zinc oxide (ZnO), 5.2% calcium oxide (CaO), 3.80% strontium oxide (SrO), 2.2% barium oxide (BaO), 0.5% germanium dioxide (GeO
2), 0.3% Vanadium Pentoxide in FLAKES (V
2O
5), 1.2% lanthanum sesquioxide (La
2O
3) and 0.2% antimonous oxide (Sb
2O
3).
Embodiment 3
Present embodiment is made up of the component of following weight, 57.50% silicon-dioxide (SiO
2), 17.0% aluminium sesquioxide (Al
2O
3), 11.5% boron trioxide (B
2O
3), 0.4% zirconium dioxide (ZrO
2), 0.3% zinc oxide (ZnO), 3.5% calcium oxide (CaO), 4.5% strontium oxide (SrO), 3.0% barium oxide (BaO), 1.0% germanium dioxide (GeO
2), 0.5% Vanadium Pentoxide in FLAKES (V
2O
5), 0.6% lanthanum sesquioxide (La
2O
3) and 0.2% cerium oxide (CeO
2).
According to glass ingredient shown in the foregoing description 1, embodiment 2 and the embodiment 3 at the laboratory fusion cast glass, selected charge temperature is 1400 ℃, this temperature is incubated half an hour down, be warming up to 1650 ℃ of insulations 2 hours then, come out of the stove and water the rectangularity fritter, go into 650 ℃ of annealing of retort furnace immediately, allow its slow cooling.The glass sample that obtains is carried out mensuration such as strain point, softening temperature, thermal expansivity, and data see the following form.
| The coefficient of expansion (10 -7/℃) | Temperature (℃) | Embodiment 1 | Embodiment 2 | Embodiment 3 |
| α 100 | 28.11 | 30.82 | 32.56 | |
| α 200 | 29.64 | 31.58 | 35.52 | |
| α 300 | 31.25 | 33.76 | 37.68 | |
| α 400 | 33.44 | 34.81 | 39.19 | |
| Strain temperature | 662℃ | 668℃ | 655℃ | |
| Transition temperature (T g) | 730℃ | 735℃ | 715℃ | |
| Softening temperature (T f) | 929℃ | 938℃ | 915℃ | |
| Visible light transmissivity % | 91.00 | 90.85 | 91.10 | |
| Density g/mm 3 | 2.4733 | 2.4903 | 2.4946 | |
Claims (1)
1, a kind of TFT base plate glass is characterized in that: its component by following weight is formed, 55～62% silicon-dioxide (SiO
2), 13～20% aluminium sesquioxide (Al
2O
3), 8～12% boron trioxide (B
2O
3), 0.1～4% zirconium dioxide (ZrO
2), 3.5～8% calcium oxide (CaO), 0.1～5% magnesium oxide (MgO), 2～6% strontium oxide (SrO), 1～4.0% barium oxide (BaO), 0.1～1% zinc oxide (ZnO), 0.1～2% germanium dioxide (GeO
2), 0～0.8% Vanadium Pentoxide in FLAKES (V
2O
5) and 0.1～2% lanthanum sesquioxide (La
2O
3), add the antimonous oxide (Sb of 0.1-0.3% in addition
2O
3) or 0.1-0.3% cerium oxide (CeO
2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100545484A CN101066836B (en) | 2007-06-11 | 2007-06-11 | TFT-base plate glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100545484A CN101066836B (en) | 2007-06-11 | 2007-06-11 | TFT-base plate glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101066836A true CN101066836A (en) | 2007-11-07 |
| CN101066836B CN101066836B (en) | 2010-12-08 |
Family
ID=38879559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100545484A Active CN101066836B (en) | 2007-06-11 | 2007-06-11 | TFT-base plate glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101066836B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101544466B (en) * | 2009-04-28 | 2012-03-21 | 陕西彩虹电子玻璃有限公司 | Crystal liquid substrate glass material and preparation method thereof |
| CN108129020A (en) * | 2017-12-13 | 2018-06-08 | 东旭科技集团有限公司 | A kind of glass composition, alumina silicate glass and its preparation method and application |
| CN108558200A (en) * | 2018-06-05 | 2018-09-21 | 中建材蚌埠玻璃工业设计研究院有限公司 | One kind being suitable for the molding without phosphorus alkali-free glass batch of float glass process |
| CN109133616A (en) * | 2018-10-22 | 2019-01-04 | 中国洛阳浮法玻璃集团有限责任公司 | A kind of LTPS-TFT base plate glass suitable for float process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1445186A (en) * | 2002-03-14 | 2003-10-01 | 广东金刚玻璃科技股份有限公司 | Alkali free ultrathin glass base for thin-film crystal liquid crystal display |
-
2007
- 2007-06-11 CN CN2007100545484A patent/CN101066836B/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101544466B (en) * | 2009-04-28 | 2012-03-21 | 陕西彩虹电子玻璃有限公司 | Crystal liquid substrate glass material and preparation method thereof |
| CN108129020A (en) * | 2017-12-13 | 2018-06-08 | 东旭科技集团有限公司 | A kind of glass composition, alumina silicate glass and its preparation method and application |
| CN108129020B (en) * | 2017-12-13 | 2019-06-07 | 东旭科技集团有限公司 | A kind of glass composition, alumina silicate glass and its preparation method and application |
| WO2019114486A1 (en) * | 2017-12-13 | 2019-06-20 | 东旭科技集团有限公司 | Composition for glass, and aluminosilicate glass, preparation method therefor, and use thereof |
| US11795100B2 (en) | 2017-12-13 | 2023-10-24 | Tunghsu Technology Group Co., Ltd. | Composition for glass, and aluminosilicate glass, preparation method therefor, and use thereof |
| CN108558200A (en) * | 2018-06-05 | 2018-09-21 | 中建材蚌埠玻璃工业设计研究院有限公司 | One kind being suitable for the molding without phosphorus alkali-free glass batch of float glass process |
| CN109133616A (en) * | 2018-10-22 | 2019-01-04 | 中国洛阳浮法玻璃集团有限责任公司 | A kind of LTPS-TFT base plate glass suitable for float process |
| CN109133616B (en) * | 2018-10-22 | 2020-06-30 | 中国洛阳浮法玻璃集团有限责任公司 | LTPS-TFT substrate glass suitable for float production |
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|---|---|
| CN101066836B (en) | 2010-12-08 |
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