CN101058720B - Heat interfacial material - Google Patents

Heat interfacial material Download PDF

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Publication number
CN101058720B
CN101058720B CN2006100603413A CN200610060341A CN101058720B CN 101058720 B CN101058720 B CN 101058720B CN 2006100603413 A CN2006100603413 A CN 2006100603413A CN 200610060341 A CN200610060341 A CN 200610060341A CN 101058720 B CN101058720 B CN 101058720B
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carbon nanotube
base material
heat interfacial
interfacial material
heat
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CN101058720A (en
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宋鹏程
刘长洪
范守善
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Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
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Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
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Abstract

The invention discloses a heat boundary material, which consists of substrate material and several carbon nanometer pipes dispersed in the substrate material, wherein the even length of carbon nanometer pipe is 600-2000nm with at least one end opened.

Description

Heat interfacial material
Technical field
The present invention relates to a kind of heat interfacial material, relate in particular to a kind of heat interfacial material that comprises carbon nanotube.
Background technology
In recent years, along with the fast development of semiconducter device integrated technique, the integrated degree of semiconducter device is more and more higher, and that device volume becomes is more and more littler, and its heat radiation becomes a more and more important problem, and its requirement to heat radiation is also more and more higher.In order to satisfy these needs, various radiating modes are by a large amount of utilizations, as utilize fan to dispel the heat, modes such as water-cooled auxiliary heat dissipation and heat pipe heat radiation, and obtain certain radiating effect, but because the contact interface and the unfairness of scatterer and semiconductor integrated device, generally be in contact with one another only less than 2% area, there is not the ideal contact interface, therefore fundamentally greatly influenced semiconducter device and carried out heat passage effect to scatterer, the contact area that the higher heat interfacial material of increase by one thermal conductivity increases the interface between the contact interface of scatterer and semiconducter device just seems very necessary.
Traditional heat interfacial material is that the particles dispersed that some thermal conductivitys are higher forms matrix material in polymer materials, as graphite, boron nitride, silicon oxide, aluminum oxide, silver or other metal etc.The heat conductivility of this kind material depends on the character of polymer support to a great extent.Wherein with grease, phase change material be the matrix material of carrier when using serve as because of it liquid can be with the thermal source surface infiltration so thermal contact resistance be less, and be that the thermal contact resistance of matrix material of carrier is just bigger with silica gel and rubber.The thermal conductivity that a common defects of these materials is whole materials is smaller, representative value is at 1W/mK, this more and more can not adapt to the demand of the raising of semiconductor integrated degree to heat radiation, and the content of heat conduction particle makes the thermal conductivity that particle and particle are in contact with one another as far as possible can increase whole matrix material in the increase polymer support, therefore can reach 4-8W/mK as some special boundary material, but when the content of heat conduction particle in the polymer support is increased to a certain degree, can make polymkeric substance lose required performance, as grease meeting hardening, thereby effect of impregnation may meeting variation, rubber also can hardening, thereby lose snappiness, this all can make the heat interfacial material performance reduce greatly.
A kind of new heat interfacial material is arranged recently, be that the thermal conductivity that will align is about carbon fiber one end of 1100W/mK or wholely is fixed together with polymkeric substance, thereby on the vertical direction of polymeric film, form the carbon fiber array that aligns, every carbon fiber just can form a heat conduction channel like this, greatly improve the thermal conductivity of this polymeric film, can reach 50-90W/mK.But a shortcoming of this class material is to do very thinly, and thickness must be more than 40 microns, and the thermal resistance of material is directly proportional with the thickness of film, so its thermal resistance is reduced to certain degree and just is difficult to further reduce again.
Along with the discovery of carbon nanotube high thermal conductivity, for improving the performance of heat interfacial material, improve its heat-conduction coefficient, a kind of heat interfacial material that contains carbon nanotube is widely used.This heat interfacial material utilizes the higher thermal conduction characteristic of carbon nanotube, by will be in advance carbon nanotubes grown mix in the matrix material and the two struck up partnership and make.But the heat conductivility and the desired result of the heat interfacial material that contains carbon nanotube that is provided in the prior art still have certain gap.Tracing it to its cause, is because the carbon nanotube in the above-mentioned heat interfacial material mostly is the length of lateral distribution and carbon nanotube than winding mutually or self-the winding greatly and are easily taken place, and therefore fails to make full use of the high characteristics of vertical thermal conductivity of carbon nanotube.
In sum, necessaryly provide a kind of and utilize the vertical heat conduction of carbon nanotube to improve the heat interfacial material of thermal conductivity.
Summary of the invention
To a kind of heat interfacial material be described with embodiment below, it can make full use of vertical heat conductivility of carbon nanotube and then obtain higher conductivity.
A kind of heat interfacial material comprises base material and the some carbon nanotubes that are dispersed in the base material.Wherein, the mean length of carbon nanotube is 600~2000 nanometers, and its at least one end is the opening shape.
The mean length of described carbon nanotube is 1000~1600 nanometers.
Described base material is a polymer materials.
Described base material is selected silica gel series, polyethylene glycol, polyester, resin series, anoxic glue series or acryl glue series for use.
Described base material is the bi-component silicone elastomerics.
Include some nano metal particulates or nano ceramics particulate in the described base material.
Described carbon nanotube caliber is 20~60 nanometers.
The mass percent concentration of described carbon nanotube in base material is 0.1~5%.
Compared with prior art, the length of carbon nanotube is bigger than weak point and radius-of-curvature in the heat interfacial material of the present invention, can prevent effectively that carbon nanotube from taking place to twine mutually or the oneself is twined, thereby utilize the high characteristic of vertical heat conduction of carbon nanotube more fully, improve the thermal conductivity of heat interfacial material.
Description of drawings
Fig. 1 is the structural representation of embodiment of the invention heat interfacial material.
Fig. 2 is transmission electron microscope (TransmissionElectron Microscope) photo of the carbon nanotube in the heat interfacial material among Fig. 1.
Fig. 3 is the preparation method's of embodiment of the invention heat interfacial material a schema.
Embodiment
Describe structure of present embodiment heat interfacial material 20 and preparation method thereof in detail below in conjunction with accompanying drawing.
See also Fig. 1 and Fig. 2, present embodiment heat interfacial material 20 comprises base material 22 and the some carbon nanotubes 24 that are dispersed in the base material 22.Wherein, the thickness of base material 22 can be set according to actual needs, and preferably, base material 22 thickness are less than 100 microns.Base material 22 can be polymer materials, comprises in advance becoming the solid organic materials for liquid curing or after solidifying, as silica gel series, polyethylene glycol, polyester, resin series, anoxic glue series or acryl glue series.In order further to increase the thermal conduction characteristic of heat interfacial material 20, can mix some nano metal particulates and/or nano ceramics particulate 26 in the base material 22, nano metal particulate 26 can be particulates such as aluminium, silver, copper, aluminum oxide, aluminium nitride, boron nitride.
The mass percent concentration of carbon nanotube 24 in base material 22 is 0.1~5%, and mean length is 600~2000 nanometers, and simultaneously, the end of carbon nanotube 24 is opening shape (as shown in Figure 2).Preferably, the mean length of carbon nanotube 24 is 1000~1600 nanometers, and caliber is 20~60 nanometers.
See also Fig. 3, the method for preparing above-mentioned heat interfacial material 20 may further comprise the steps:
Step (one) provides certain quantity of carbon nanometer pipe 24 and liquid substrate material 22;
Wherein, base material 22 is a polymer materials, comprises in advance becoming the solid organic materials for liquid through curing or after solidifying, as silica gel series, polyethylene glycol, polyester, resin series, anoxic glue series or acryl glue series.The bi-component silicone elastomerics of preferred DOW CORNING (Dow Corning) company in the present embodiment (concrete model is Sylgard 160) is that A, B two portions liquid ingredient are formed before Sylgard 160 mixes, and can be cured as flexible elastomer after the mixing.In order further to increase the thermal conduction characteristic of heat interfacial material 20, in step (), can provide some nano metal particulates and/or nano ceramics particulate 26 simultaneously, nano metal particulate 26 can be particulates such as aluminium, silver, copper, aluminum oxide, aluminium nitride, boron nitride, preferred silver-colored particulate in the present embodiment.
Carbon nanotube 24 can pass through existing technology preparation such as chemical Vapor deposition process, arc discharge method or laser evaporation method in advance.Preferred chemical Vapor deposition process prepares carbon nanotube 24 in the present embodiment, at first forms catalyzer in substrate, at high temperature feeds carbon source gas then to form carbon nanotube.Described catalyzer comprises transition metal such as iron, nickel, cobalt, palladium.Described carbon source gas bag is drawn together methane, ethene, propylene, acetylene, methyl alcohol and ethanol etc.Concrete grammar covers the iron film of about 5 nanometer thickness of one deck, and anneals under 300 ℃ of conditions in air for being substrate with silicon on silicon base; In chemical vapor deposition chamber body (Chemical Vapor Deposition Chamber), be carbon source gas carbon nano-tube 24 with ethene under 700 ℃ of conditions then.
Step (two), ball milling is more than 4 hours in ball mill with carbon nanotube 24, and the mean length of carbon nanotube 24 is that 600~2000 nanometers and its at least one end are opening-like behind the ball milling;
The purpose of ball milling is to make the mean length of carbon nanotube 24 to be controlled at 600~2000 nanometers, and then the radius-of-curvature of controlling carbon nanotube 24.The principle of ball milling is that the opposite spin by ball mill chassis and inner disc makes in the ball milling chamber that is fixed on the inner disc and produces centrifugal force, Metal Ball in the ball milling chamber is constantly clashed into the carbon nanotube that is housed in the ball milling chamber under action of centrifugal force, thereby the length of carbon nanotube is shortened in carbon nanotube generation fracture under bump and at least one end of post-rift carbon nanotube is the opening shape.The time of ball milling decides according to the parameters of ball mill, for example, rotating speed when the ball mill chassis is 400 revolutions per seconds, the opposite direction rotating speed of inner disc is 800 revolutions per seconds, and the sense of rotation of chassis and inner disc is every 20 minutes checkers, at this moment, and preferred 6~20 hours of ball milling time, optimally, the ball milling time was at 8~10 hours.
Step (three) is mixed the carbon nanotube behind the ball milling 24 and is made the two form solid-state and then obtain heat interfacial material 20 with liquid substrate material 22.
The mass percent concentration of carbon nanotube 24 in base material 22 is 0.1~5%.When nano metal particulate and/or nano ceramics particulate 26 were provided in step (), nano metal particulate and/or nano ceramics particulate 26 were mixed together with carbon nanotube 24, liquid substrate material 22.In the mixing process,, can use ultrasonic wave that mixture is shaken and handle 20~40 minutes for making carbon nanotube 24 and/or nano metal particulate and/or nano ceramics particulate 26 homodisperse in base material 22.Base material 22 forms solid-state method according to different base materials 22 selection diverse ways with the blending means and the base material 22 of carbon nanotube 24.In the present embodiment, when selecting bi-component silicone elastomerics A, B for use as base material 22, carbon nanotube 24 and base material 22 mix and base material 22 forms solid-state method and is:
Mix silicone elastomer A and part carbon nanotube 24, can use ultrasonic wave to shake simultaneously and handle 20~40 minutes;
Mix silicone elastomer B and other parts carbon nanotube 24, can use ultrasonic wave to shake simultaneously and handle 20~40 minutes; And
Mix the silicone elastomer A and the silicone elastomer B that contain carbon nanotube 24, and mixed material is at room temperature placed about heat interfacial material 20 that promptly can obtain resilient flexible in 24 hours.
In addition, those skilled in the art also can do other and change in spirit of the present invention, and these variations of doing according to spirit of the present invention certainly all should be included in the present invention's scope required for protection.

Claims (8)

1. heat interfacial material, comprise base material and a plurality of carbon nanotubes that are dispersed in the base material, it is characterized in that, the mean length of described carbon nanotube is 600~2000 nanometers, and its at least one end is the opening shape, and described carbon nanotube is dispersed in the described base material disorderly.
2. heat interfacial material as claimed in claim 1 is characterized in that, the mean length of described carbon nanotube is 1000~1600 nanometers.
3. heat interfacial material as claimed in claim 2 is characterized in that, the mass percent concentration of described carbon nanotube in base material is 0.1~5%.
4. heat interfacial material as claimed in claim 3 is characterized in that, described carbon nanotube caliber is 20~60 nanometers.
5. heat interfacial material as claimed in claim 4 is characterized in that, described base material is a polymer materials.
6. heat interfacial material as claimed in claim 5 is characterized in that, includes nano metal particulate or nano ceramics particulate in the described base material.
7. heat interfacial material as claimed in claim 6 is characterized in that, described base material is selected silica gel series, polyethylene glycol, polyester, resin series, anoxic glue series or acryl glue series for use.
8. heat interfacial material as claimed in claim 7 is characterized in that, described base material is the bi-component silicone elastomerics.
CN2006100603413A 2006-04-21 2006-04-21 Heat interfacial material Active CN101058720B (en)

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Publication number Priority date Publication date Assignee Title
JP5518722B2 (en) * 2008-09-18 2014-06-11 日東電工株式会社 Carbon nanotube assembly
JPWO2022009555A1 (en) * 2020-07-07 2022-01-13

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407922B1 (en) * 2000-09-29 2002-06-18 Intel Corporation Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader
CN1667821A (en) * 2004-03-13 2005-09-14 鸿富锦精密工业(深圳)有限公司 Thermal interfacial material and method of manufacture
CN1676568A (en) * 2004-04-02 2005-10-05 清华大学 Thermal interface material and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6407922B1 (en) * 2000-09-29 2002-06-18 Intel Corporation Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader
CN1667821A (en) * 2004-03-13 2005-09-14 鸿富锦精密工业(深圳)有限公司 Thermal interfacial material and method of manufacture
CN1676568A (en) * 2004-04-02 2005-10-05 清华大学 Thermal interface material and its manufacturing method

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