CN101055881A - Back shining type ZnO base ultraviolet imaging solid state focal plane detection array and its preparation - Google Patents
Back shining type ZnO base ultraviolet imaging solid state focal plane detection array and its preparation Download PDFInfo
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- CN101055881A CN101055881A CNA2007100177919A CN200710017791A CN101055881A CN 101055881 A CN101055881 A CN 101055881A CN A2007100177919 A CNA2007100177919 A CN A2007100177919A CN 200710017791 A CN200710017791 A CN 200710017791A CN 101055881 A CN101055881 A CN 101055881A
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Abstract
The invention relates to a backlight ZnO-based ultraviolet imaging solid focal plane surveying array and preparation, which on the sapphire (0001)substrate of double-face polishing, uses laser molecular beam to epitaxially grow a MgxZn1-xO(BexZn1-xO) nesa heavily doped with Al, then epitaxially growing a MgyZn1-yO layer without adulterant, sensitive to ultraviolet light. Then a MgzZn1-zO ohm contact epitaxial layer heavily doped with Al is gengerated on the upper surface. An array pixel cell structure is formed by using a photoetching and ICP ion etching method, then uses RF magnetron sputtering to plate a SiO2 passivation layer, based on the etched graph. An Al contact of electrodes etched by reactive ion uses a method of evaporation plated film to form a metallic contact, for rapid annealing activation of an ultraviolet sensitive active layer to form an ohm contact, thus getting a backlight ZnO-based ultraviolet imaging solid focal plane surveying array. The invention and the matched Si-CMOS readout circuit chip are interconnected through indium bumps, which are put on the focal plane of the ultraviolet lens, added with the corresponding image processing, memory circuit and software to form a complete ultraviolet imaging device.
Description
Technical field
The invention belongs to the photoelectronic imaging field, relate to a kind of core component of back shining type ZnO base solid state focal plane array ultraviolet imagery device---structural design of back shining type ZnO base ultraviolet imaging solid state focal plane detection array and preparation method thereof.
Background technology
Ultraviolet imagery can be widely used in research fields such as astronomical observation, ultraviolet guidance and early warning, medical imaging, police criminal detection, non-visual short distance secure communication, Aero-Space, environmental monitoring, biological species exploration and discriminating.The application of ultraviolet band on space astronomy is observed developed ultraviolet astronomy.The main effect of space ultraviolet observation is the detection that is by to outer space ultra-violet radiation, studies relevant model stellar atmosphere and interstellar medium etc.Current, spaceborne ultraviolet imagery instrument becomes more and more higher to the requirement of its used detector, it not only requires detector to have big dynamic range, but also require to have low noise, high speed and high resolution, in order to satisfy the needs of following space ultraviolet imagery, many in the world astronomical units carry out the new ultra-violet image device based on wide bandgap semiconductor in succession at present.
Current ultraviolet detection adopts photomultiplier to be equipped with expensive optics colour filter more, and its sensitivity is subjected to the restriction of filter transmitance and photocathode quantum efficiency, and its volume and weight are big, the operating voltage height, and the photocathode quantum efficiency is low.System in the space operate as normal comprises a plurality of parts such as power supply, appearance control, thermal control, electronic equipment, scientific and effective load.Power consumption senior general proposes higher requirement to power supply, thermal control etc., and the volume conference influences appearance control and propulsion system.And photomultiplier is surveyed for point, needs scanning imagery.An other class is based on the silica-based ccd detector of dorsal part attenuate, and its sensitivity to visible light is very high, and very low to the sensitivity of ultraviolet light, especially to vacuum ultraviolet (VUV), and visible light is also very big to its influence.In addition, the dark current of CCD is bigger.In order to suppress dark signal, CCD must work at low temperatures, has so just strengthened technical difficulty and cost, and cold detector also is the cold trap that instrument internal can stain with fixed attention.The radiation-resistant property of CCD is very poor in addition, and this not only can cause decrease in image quality, but also can influence the charge collection efficiency of passage, brings the array roomage response inhomogeneous.The wide bandgap semiconductor ultraviolet detector has fully as seen blind simultaneously, low-voltage, and response speed is fast, anti-irradiation, gain is high, and dark current is low, and the life-span is long, is beneficial to advantages such as photoelectricity is integrated, cost is low, volume is little, in light weight, can overcome above-mentioned shortcoming.
Summary of the invention
The objective of the invention is to, propose a kind of structure and preparation technology of novel back shining type ZnO base ultraviolet imaging solid state focal plane detection array.
In order to realize above-mentioned task, the present invention takes following technical solution:
A kind of back shining type ZnO base ultraviolet imaging solid state focal plane detection array, this plane detection array is substrate with the sapphire (0001) of twin polishing, it is characterized in that:
In sapphire (0001) substrate of described twin polishing, utilize the heavily doped N-Mg of laser molecular beam epitaxy or RF-reactively sputtered titanium method growth Al
xZn
1-xO or Be
xZn
1-xThe O layer is used for electrode and UV-C light window layer as nesa coating, guarantees that the light of UV-C wave band fully sees through; And the N-Mg of this layer
xZn
1-xO or Be
xZn
1-xThe x value of O is big as much as possible, and its energy gap is big like this, and is few to the UV Absorption of UV-C, and this one deck also determines the short-wavelength limit of image device simultaneously;
The plain Mg of epitaxial growth on nesa coating
yZn
1-yO layer, the effect of this layer are fully to absorb ultraviolet light, are the core layers of ultraviolet detection unit;
The heavily doped N-Mg of one deck Al of regrowth
zZn
1-zThe O epitaxial loayer, wherein the z value is more than or equal to Mg
yZn
1-yThe y value of O layer is to realize good Ohmic contact; If adopt Schottky contacts, then do not need this one deck of growing, but at Mg
yZn
1-yMake layer of metal coating with evaporation coating technology on the O layer;
Utilize the method for photoetching and ICP ion etching to form pixelated array cellular construction figure at last, and on the good circular foundation of etching, utilize the RF magnetron sputtering to plate SiO
2Passivation layer.
Above-mentioned back shining type ZnO base solid state focal plane array ultraviolet imagery preparation of devices method is characterized in that, specifically comprises the following steps:
At first (also can utilize substrates such as MgO or quartz) utilizes the heavily doped Mg of laser molecular beam epitaxy (L-MBE) epitaxial growth one deck Al in sapphire (0001) substrate of twin polishing
xZn
1-xO (Be
xZn
1-xO) nesa coating plays the effect of electrode and UV-C light window layer, can also utilize other to UV-C wave band transparent electrically-conductive film.The plain Mg of epitaxial growth on this basis then to the ultraviolet light sensitivity
yZn
1-yThe O layer.For fear of the influence of surface state and adsorption layer, adopt SiO
2Or other medium carries out surface passivation.Follow the heavily doped Mg of regrowth one deck Al (or Ga, In) in the above
zZn
1-zO ohmic contact epitaxial loayer.Wherein z gets final product more than or equal to y.Its basic structure growth is finished like this, utilizes the method for photoetching and ICP ion etching to form array pixel cell structure (30 * 30 μ m then
2Or other littler pixel cell).For fear of the influence on surface, on the good circular foundation of etching, utilize the RF magnetron sputtering to plate SiO
2Passivation layer.Reactive ion etching forms the Al contact hole (or form Schottky contacts with Au and Pt) of top electrode then, then utilizes the way of evaporation coating to form Metal Contact, utilizes short annealing to activate ultraviolet sensitivity active layer and formation good Ohmic contact at last.So far, ultraviolet focal-plane imaging array just completes.
In addition, last contact electrode also can adopt Au or Pt and UID-MgZnO layer to form Schottky contacts, and each image-generating unit is exactly the ultraviolet detection unit of a Schottky contacts like this.Because sapphire substrates itself is to wavelength only transparent greater than 200nm, so detection the time, ultraviolet light receives from the substrate sapphire back side.
The ultraviolet imagery array element of the back-illuminated type that completes can with the Si-CMOS readout circuit chip of a coupling, by the indium bump interconnect.Be placed on then on the focal plane of ultraviolet lens, add that corresponding image processing, memory circuit and software just can form a complete ultraviolet imagery device.
Description of drawings
Fig. 1: the back shining type ZnO base ultraviolet imaging solid state focal plane detection array cellular construction schematic diagram of the present invention's design.
Fig. 2: back shining type ZnO base ultraviolet imaging solid state focal plane detection array cell array that the present invention is designed and special-purpose CMOS reading circuit indium bump bonding schematic diagram.
Fig. 3: the process chart of pixel cell of the present invention, wherein, and 1) be the MgZnO that growth difference is successively mixed, 2) be that photoetching forms figure, 3) be the etching table top, 4) for forming table top, 5) be deposition SiO
2Passivation layer, 6) be the photoetching electrode district, 7) be the etching electrode district, 8) for inserting the Al electrode, 9) for forming single pixel cell;
Fig. 4: the ultraviolet light response spectrum of the back shining type ZnO base ultraviolet imaging solid state focal plane detection array of the present invention's preparation.
The present invention is described in further detail below in conjunction with embodiment that accompanying drawing and inventor provide.
Embodiment
The present invention realizes a kind of back shining type ZnO base ultraviolet imaging solid state focal plane detection array and preparation method thereof.Shown in Figure 1 in its each image-generating unit structure such as the annex, manufacture method as shown in Figure 3.
This ultraviolet imagery detection array is substrate with the sapphire (0001) of twin polishing, utilizes the heavily doped N-Mg of laser molecular beam epitaxy or RF-reactively sputtered titanium method growth Al in sapphire (0001) substrate of described twin polishing
xZn
1-xO or Be
xZn
1-xThe O layer is used for electrode and UV-C light window layer as nesa coating, guarantees that the light of UV-C wave band fully sees through; And the N-Mg of this layer
xZn
1-xO or Be
xZn
1-xThe x value of O is big as much as possible, and its energy gap is big like this, and is few to the UV Absorption of UV-C, and this one deck also determines the short-wavelength limit of image device simultaneously, (cut-on).Can also utilize other to UV-C wave band transparent electrically-conductive film.
The plain Mg of epitaxial growth on this basis then
yZn
1-yO layer, the effect of this one deck are fully to absorb ultraviolet light, are the sensitive layer and the core layers of ultraviolet detection unit.For fear of the influence of surface state, we will adopt SiO
2Or other medium carries out surface passivation.
Follow the heavily doped N-Mg of one deck Al of regrowth in the above
zZn
1-zThe O epitaxial loayer, wherein the z value is more than or equal to Mg
yZn
1-yThe y value of O layer is to realize good Ohmic contact; If adopt Schottky contacts, then do not need this one deck of growing, but at Mg
yZn
1-yMake layer of metal coating with evaporation coating technology on the O layer;
Its basic structure growth is finished like this, utilizes the method for photoetching and ICP ion etching (for example: 30 * 30 μ m to form pixelated array cellular construction figure then
2) (Fig. 1), for fear of the influence on surface, on the good pixelated array cellular construction circular foundation of etching, utilize the RF magnetron sputtering to plate SiO
2Passivation layer.Reactive ion etching forms the Al contact hole (or form Schottky contacts with Au and Pt) of top electrode then, then utilizes the way of evaporation coating to form the Metal Contact electrode, utilizes short annealing to activate ultraviolet sensitivity active layer and formation good Ohmic contact at last.So far, ultraviolet focal-plane imaging array just completes.
The ultraviolet imagery detection array unit of the back-illuminated type that completes can with the Si-CMOS readout circuit chip of a coupling, by indium bump interconnect (Fig. 2).Be placed on then on the focal plane of ultraviolet lens, add that corresponding image processing, memory circuit and software just can form a complete ultraviolet imagery device.
In addition, contact electrode also can adopt Au or Pt and UID-MgZnO layer to form Schottky contacts, and so each image-generating unit is exactly the ultraviolet detection unit of a schottky junctions plinth.This point can be tested under study for action flexibly.
Because sapphire substrates (or other substrate that ultraviolet is seen through) itself is to wavelength only transparent greater than 200nm, so when surveying, only from the reception of the substrate sapphire back side.In addition, the ultraviolet imagery array element of the back lighting that completes can with the Si-CMOS readout circuit chip of a coupling, by the indium bump interconnect.
Process aspect utilizes LMBE to realize the primary structure of day blind ultraviolet focal-plane imaging array, utilizes photoetching, wet etching, ICP ion etching, RIE ion etching to realize the processing of its micro-structural.Utilize evaporation coating and rapid thermal anneal process to realize ohmic contact or Schottky contacts.Utilize magnetron sputtering to realize the deposition of passivation layer, utilize KNS ball bonding machine to realize the making of salient point.
The ultraviolet light response spectrum of the back shining type ZnO base solid state focal plane pixelated array unit of the present invention's preparation is referring to Fig. 4.As shown in Figure 4, the peak response wavelength of single ZnO detector cells is about 382nm by wavelength about about 365nm.
Claims (2)
1. back shining type ZnO base ultraviolet imaging solid state focal plane detection array, this plane detection array is substrate with the sapphire (0001) of twin polishing, it is characterized in that:
In sapphire (0001) substrate of described twin polishing, utilize the heavily doped N-Mg of laser molecular beam epitaxy or RF-reactively sputtered titanium method growth Al
xZn
1-xO or Be
xZn
1-xThe O layer is used for electrode and UV-C light window layer as nesa coating, guarantees that the light of UV-C wave band fully sees through; And the N-Mg of this layer
xZn
1-xO or Be
xZn
1-xThe x value of O is big as much as possible, and its energy gap is big like this, and is few to the UV Absorption of UV-C, and this one deck also determines the short-wavelength limit of image device simultaneously;
The plain Mg of epitaxial growth on nesa coating
yZn
1-yO layer, the effect of this layer are fully to absorb ultraviolet light, are the core layers of ultraviolet detection unit;
The heavily doped N-Mg of one deck Al of regrowth
zZn
1-zThe O epitaxial loayer is to realize good Ohmic contact; Or the employing Schottky contacts, directly at Mg
yZn
1-yMake layer of metal coating with evaporation coating technology on the O layer;
Utilize the method for photoetching and ICP ion etching to form pixelated array cellular construction figure at last, and on the good one-tenth pixelated array cellular construction figure of etching, utilize the RF magnetron sputtering to plate SiO
2Passivation layer.
2. the preparation method of the described back shining type ZnO base ultraviolet imaging solid state focal plane detection array of claim 1 is characterized in that, specifically comprises the following steps:
At first in sapphire (0001) substrate of twin polishing, utilize laser molecular beam epitaxy epitaxial growth one layer thickness to be the heavily doped Mg of the Al of 50nm-100nm
xZn
1-xO or Be
xZn
1-xThe O epitaxial loayer, as nesa coating, this nesa coating plays the effect of electrode and UV-C light window layer;
The Mg of the non-doping of epitaxial growth on nesa coating then
yZn
1-yThe O layer is used for fully absorbing ultraviolet light as the sensitive layer and the core layer of ultraviolet detection unit, also can adopt SiO
2Or other medium carries out surface passivation;
Follow Mg
yZn
1-yThe heavily doped Mg of regrowth one deck Al above the O layer
zZn
1-zThe O epitaxial loayer, wherein the z value is more than or equal to the Mg that mixes
yZn
1-yThe y value of O layer is used to realize good Ohmic contact; If the employing Schottky contacts then adopts evaporation coating technology directly at Mg
yZn
1-yMake layer of metal coating on the O layer;
Utilize the method for photoetching and ICP ion etching to form pixelated array cellular construction figure then; On the good pixelated array unit figure basis of etching, utilize the RF magnetron sputtering to plate SiO again
2Passivation layer;
Form the contact hole of ohmic contact Al electrode then with reactive ion etching, utilize the method for evaporation coating to form Metal Contact (or with Au and Pt formation Schottky contacts) again; Utilize short annealing to activate ultraviolet sensitivity active layer and formation good Ohmic contact at last; The back shining type ZnO base ultraviolet imaging solid state focal plane detection array can complete.
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| CN101661944B (en) * | 2008-08-26 | 2011-01-26 | 北京大学 | Pixel unit structure of ultraviolet image sensor and preparation method thereof |
| CN102013442A (en) * | 2009-07-29 | 2011-04-13 | 三星康宁精密素材株式会社 | Photovoltaic cell substrate and method of manufacturing the same |
| CN102280163A (en) * | 2011-05-20 | 2011-12-14 | 西北工业大学 | Infrared transparent conductive film and preparation method thereof |
| CN102891150A (en) * | 2011-07-22 | 2013-01-23 | 中国科学院微电子研究所 | Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof |
| CN103325858A (en) * | 2013-06-19 | 2013-09-25 | 中国科学院物理研究所 | Deep ultraviolet detector and manufacturing method thereof |
| CN104779308A (en) * | 2014-01-10 | 2015-07-15 | 中国科学院物理研究所 | Method for improving the conductivity of MgxZn(1-x)O and application of MgxZn(1-x)O in photoelectronic device |
| CN104882455A (en) * | 2015-06-02 | 2015-09-02 | 中国科学院上海技术物理研究所 | Back-illuminated ultraviolet focal plane detector integrated with micro lens array and micro lens array preparation method |
| CN109659398A (en) * | 2018-12-26 | 2019-04-19 | 中南大学 | A kind of AlGaN base carries on the back the preparation method into formula MSM ultraviolet focal-plane array imaging system |
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| CN113066876A (en) * | 2021-04-29 | 2021-07-02 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet detector and preparation method thereof |
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| CN101661944B (en) * | 2008-08-26 | 2011-01-26 | 北京大学 | Pixel unit structure of ultraviolet image sensor and preparation method thereof |
| CN102013442A (en) * | 2009-07-29 | 2011-04-13 | 三星康宁精密素材株式会社 | Photovoltaic cell substrate and method of manufacturing the same |
| CN102280163A (en) * | 2011-05-20 | 2011-12-14 | 西北工业大学 | Infrared transparent conductive film and preparation method thereof |
| CN102280163B (en) * | 2011-05-20 | 2013-01-16 | 西北工业大学 | Infrared transparent conductive film and preparation method thereof |
| CN102891150A (en) * | 2011-07-22 | 2013-01-23 | 中国科学院微电子研究所 | Pixel structure of ultraviolet detector, ultraviolet detector system and manufacturing method thereof |
| CN103325858A (en) * | 2013-06-19 | 2013-09-25 | 中国科学院物理研究所 | Deep ultraviolet detector and manufacturing method thereof |
| CN104779308A (en) * | 2014-01-10 | 2015-07-15 | 中国科学院物理研究所 | Method for improving the conductivity of MgxZn(1-x)O and application of MgxZn(1-x)O in photoelectronic device |
| CN104779308B (en) * | 2014-01-10 | 2017-07-25 | 中国科学院物理研究所 | A kind of opto-electronic device |
| CN104882455A (en) * | 2015-06-02 | 2015-09-02 | 中国科学院上海技术物理研究所 | Back-illuminated ultraviolet focal plane detector integrated with micro lens array and micro lens array preparation method |
| EP3125309B1 (en) * | 2015-07-28 | 2019-10-16 | Carrier Corporation | Compositionally graded photodetectors |
| EP3611768B1 (en) * | 2015-07-28 | 2022-08-31 | Carrier Corporation | Compositionally graded photodetectors |
| CN109659398A (en) * | 2018-12-26 | 2019-04-19 | 中南大学 | A kind of AlGaN base carries on the back the preparation method into formula MSM ultraviolet focal-plane array imaging system |
| CN113066876A (en) * | 2021-04-29 | 2021-07-02 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet detector and preparation method thereof |
| CN113066876B (en) * | 2021-04-29 | 2022-12-06 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet detector and preparation method thereof |
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