CN101051587A - Method for improving iron oxide nano line material field transmitting property - Google Patents
Method for improving iron oxide nano line material field transmitting property Download PDFInfo
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- CN101051587A CN101051587A CN 200710038299 CN200710038299A CN101051587A CN 101051587 A CN101051587 A CN 101051587A CN 200710038299 CN200710038299 CN 200710038299 CN 200710038299 A CN200710038299 A CN 200710038299A CN 101051587 A CN101051587 A CN 101051587A
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- ferric oxide
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Abstract
Belonging to technical areas for preparing material of photoelectron and semiconductor, and of application, the disclosed method places Nano ferric oxide wire rod into plasma equipment. Frequency of radio source is set at 13.6MHz. Hydrogen with flux 5 - 50sccm is passed to the plasma equipment. Under condition of power 100 - 500W and pressure 100 - 500Pa, hydrogen plasma generated bombards Nano ferric oxide wire rod to raise field emission capability of the Nano ferric oxide wire rod. Advantages are: simple method, low cost, easy of implementation, good repeatability, obvious effect, and good adaptability. The method is especially suitable to fabricate cathode of flat panel display in field emission.
Description
Technical field
The present invention relates to a kind of raising iron oxide (Fe
2O
3) method of nano line material field transmitting property, specifically, relating to a kind of is under the condition of 100～500Pa at pressure, with hydrogen plasma bombardment ferric oxide nano wire material, improve the method for its field emission performance, the technical field that belongs to the preparation of photoelectron and semi-conducting material and use.
Background technology
Fe
2O
3As a kind of under atmospheric environment stable oxide semi-conducting material, on science and technology, have important effect.It has that energy gap is little, corrosion resistance good and advantage such as acquisition easily, can be used to photocatalyst, solar energy converting material and sensor material.Because Fe
2O
3Of many uses and nanometer materials have novel characteristic, so the Fe of synthesis of nano size
2O
3It is a considerable problem.Recently, various Fe
2O
3Nanostructure comprises that nano wire, nano belt, nanotube and nanometer sheet are successfully prepared, and their performances such as ferromagnetism have been widely studied, but for important semiconductor nano material like this, its field emission performance but seldom was studied.Find the Fe of growth in the existing report
2O
3The field emission performance of nano-material is not ideal enough.On the other hand, handle nanostructure such as carbon nano-tube with plasma bombardment, the method for cupric oxide nano line etc. has been proved to be a kind of effective ways that improve the nano material field emission performance, but about plasma treatment to Fe
2O
3The influence of nanostructured surface pattern and field emission performance also never was studied, so how by improving Fe significantly with plasma treatment
2O
3The field emission performance of nano wire will have very important significance.
Summary of the invention
The purpose of this invention is to provide a kind of method that improves iron oxide nano line material field transmitting property.
For achieving the above object, the present invention adopts following technical scheme.The ferric oxide nano wire material is put into plasma device, the frequency setting of radio frequency source is 13.6MHz, feeding flow is the hydrogen of 5～50sccm, be respectively under the condition of 100～500W and 100～500Pa at power and pressure, the hydrogen plasma bombardment ferric oxide nano wire material that produces is improved the field emission performance of the ferric oxide nano wire material of being handled.
Now describe technical scheme of the present invention in detail.
A kind of method that improves the iron oxide nano-wire field emission performance is characterized in that, concrete processing step is as follows:
The first step is put into the ferric oxide nano wire material
Put into together with substrate between two electrodes of vacuum chamber of plasma apparatus being grown in the length of the iron oxide nano-wire on the alloy substrate and ferric oxide nano wire material that diameter is respectively 5～30 μ m and 100nm～1 μ m;
Second step vacuumized
Air pressure in the vacuum chamber is extracted into 100～500Pa;
The 3rd step fed hydrogen
Hydrogen is fed in the vacuum chamber, and flow is 5～50sccm;
The 4th step was opened radio frequency source
Open frequency is the radio frequency source of 13.6MHz, and power is adjusted to 100～500W, makes the hydrogen plasma bombardment ferric oxide nano wire material of generation, and the time is 10～90min;
The 5th step obtained finished product
Vacuum chamber is opened, obtained the good ferric oxide nano wire material of finished product-field emission performance.
The present invention uses plasma to handle to be grown in the ferric oxide nano wire material on the alloy substrate, up to the present relevant as yet research report in this respect.The present invention has that method is simple, cost is low, is easy to realization, good reproducibility and outstanding effect advantage.In addition, the present invention also has the good advantage of adaptability, is suitable for being used for handling other nano material, improves the field emission performance of handling nano material or improves surface topography to satisfy extraordinary requirement of using.
Description of drawings
Fig. 1 (a) is the SEM photo before single iron oxide nano-wire is handled; Fig. 1 (b) is the SEM photo after single iron oxide nano-wire is handled.
Fig. 2 is that typical ferric oxide nano wire material is subjected to the hydrogen plasma bombardment to handle the Raman scattering spectrum comparison diagram of front and back.
Fig. 3 is that typical ferric oxide nano wire material is subjected to the comparison diagram that concerns between the hydrogen plasma bombardment field emission-electric field strength before and after handling.
Fig. 4 (a) is that the electronics emission before typical ferric oxide nano wire material is handled by the hydrogen plasma bombardment resembles photo; Fig. 4 (b) is that the electronics emission after typical ferric oxide nano wire material is handled by the hydrogen plasma bombardment resembles photo.
Embodiment
Now further describe technical scheme of the present invention and operation principle thereof in conjunction with the accompanying drawings and embodiments.All embodiment all operate by the concrete operations step of the method for above-mentioned raising iron oxide nano-wire field emission performance fully, and each embodiment is only enumerated crucial technical data.
Embodiment 1:
In the first step, the length and the diameter that are grown in the iron oxide nano-wire of the ferric oxide nano wire material on the alloy substrate are respectively 5 μ m and 100nm.In second step, the air pressure in the vacuum chamber is extracted into 100Pa.In the 3rd step, hydrogen is fed in the vacuum chamber, flow is 5sccm.In the 4th step, open radio frequency source, power is transferred to 100W, make the hydrogen plasma bombardment ferric oxide nano wire material 10min of generation.
Fig. 2 and Fig. 3 are respectively that the ferric oxide nano wire material among the embodiment 1 is subjected to before and after hydrogen plasma bombardment handles, their Raman scattering spectrum comparison diagram and their field emission-electric field strength concern comparison diagram.
Handle the ferric oxide nano wire material with the hydrogen plasma bombardment, the principle that improves its field emission performance is: when the hydrogen plasma of reproducibility bombards ferric oxide nano wire material surperficial, can take away a large amount of oxygen atoms, thereby cause dislocation and defective etc., prolongation along with the processing time, form many nano level crystal on the surface of iron oxide nano-wire because these crystal have very little radius of curvature, so that the field emission performance of iron oxide nano-wire material obviously improves.
Embodiment 2:
In the first step, the length and the diameter that are grown in the iron oxide nano-wire of the ferric oxide nano wire material on the alloy substrate are respectively 18 μ m and 550nm.In second step, the air pressure in the vacuum chamber is extracted into 300Pa.In the 3rd step, hydrogen is fed in the vacuum chamber, flow is 30sccm.In the 4th step, radio frequency source is opened, power is transferred to 300W, make the hydrogen plasma bombardment ferric oxide nano wire material 50min of generation.
Ferric oxide nano wire material among the embodiment 2 is subjected to the hydrogen plasma bombardment to handle front and back, and the comparison diagram that concerns of their Raman scattering spectrum comparison diagram and their field emission-electric field strength is similar to Fig. 2 and figure line shown in Figure 3 respectively.
Embodiment 3:
In the first step, the length and the diameter that are grown in the iron oxide nano-wire of the ferric oxide nano wire material on the alloy substrate are respectively 30 μ m and 1 μ m.In second step, the air pressure in the vacuum chamber is extracted into 500Pa.In the 3rd step, hydrogen is fed in the vacuum chamber, flow is 50sccm.In the 4th step, radio frequency source is opened, power is transferred to 500W, make the hydrogen plasma bombardment ferric oxide nano wire material 90min of generation.
Ferric oxide nano wire material among the embodiment 3 is subjected to the hydrogen plasma bombardment to handle front and back, and the comparison diagram that concerns of their Raman scattering spectrum comparison diagram and their field emission-electric field strength is similar to Fig. 2 and figure line shown in Figure 3 respectively.
Bombard the negative electrode that the ferric oxide nano wire material of handling is particularly suitable for being used for making display of field-emitting flat panel with method of the present invention.
Claims (1)
1, a kind of method that improves the iron oxide nano-wire field emission performance is characterized in that, concrete processing step is as follows:
The first step is put into the ferric oxide nano wire material
Put into together with substrate between two electrodes of vacuum chamber of plasma apparatus being grown in the length of the iron oxide nano-wire on the alloy substrate and ferric oxide nano wire material that diameter is respectively 5～30 μ m and 100nm～1 μ m;
Second step vacuumized
Air pressure in the vacuum chamber is extracted into 100～500Pa;
The 3rd step fed hydrogen
Hydrogen is fed in the vacuum chamber, and flow is 5～50sccm;
The 4th step was opened radio frequency source
Open frequency is the radio frequency source of 13.6MHz, and power is adjusted to 100～500W, makes the hydrogen plasma bombardment ferric oxide nano wire material of generation, and the time is 10～90min;
The 5th step obtained finished product
Vacuum chamber is opened, obtained the good ferric oxide nano wire material of finished product one field emission performance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710038299A CN101051587B (en) | 2007-03-22 | 2007-03-22 | Method for improving iron oxide nano line material field transmitting property |
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|---|---|---|---|
| CN200710038299A CN101051587B (en) | 2007-03-22 | 2007-03-22 | Method for improving iron oxide nano line material field transmitting property |
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| CN101051587A true CN101051587A (en) | 2007-10-10 |
| CN101051587B CN101051587B (en) | 2010-05-19 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102262990A (en) * | 2011-07-04 | 2011-11-30 | 中山大学 | Method of improving emission characteristics of ferric oxide nanometer cold-cathode |
| US8157606B2 (en) | 2009-02-20 | 2012-04-17 | Chunghwa Picture Tubes, Ltd. | Fabricating method of electron-emitting device |
| CN109813760A (en) * | 2019-02-28 | 2019-05-28 | 江苏理工学院 | A kind of zinc oxide nanowire gas sensor and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135588C (en) * | 2001-11-23 | 2004-01-21 | 中国科学院上海微系统与信息技术研究所 | Method of raising the field electron emitting performance of carbon nanotube film |
| KR100617482B1 (en) * | 2003-09-04 | 2006-09-01 | 학교법인 포항공과대학교 | METHOD FOR PRODUCING FIELD EMISSION DEVICES AND ZnO NANONEEDLES FOR FIELD EMISSION DEVICES AND ELECTRONIC DEVICES USING THE SAME |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8157606B2 (en) | 2009-02-20 | 2012-04-17 | Chunghwa Picture Tubes, Ltd. | Fabricating method of electron-emitting device |
| CN102262990A (en) * | 2011-07-04 | 2011-11-30 | 中山大学 | Method of improving emission characteristics of ferric oxide nanometer cold-cathode |
| CN109813760A (en) * | 2019-02-28 | 2019-05-28 | 江苏理工学院 | A kind of zinc oxide nanowire gas sensor and preparation method thereof |
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|---|---|
| CN101051587B (en) | 2010-05-19 |
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