CN101034675A - Chip pressing base and its application device - Google Patents
Chip pressing base and its application device Download PDFInfo
- Publication number
- CN101034675A CN101034675A CN 200610067627 CN200610067627A CN101034675A CN 101034675 A CN101034675 A CN 101034675A CN 200610067627 CN200610067627 CN 200610067627 CN 200610067627 A CN200610067627 A CN 200610067627A CN 101034675 A CN101034675 A CN 101034675A
- Authority
- CN
- China
- Prior art keywords
- chip
- pressing base
- pressing
- chip pressing
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a chip press-bonding seat applied to packaging process and the application device thereof. And the chip press-bonding seat at least comprises a ceramic layer, where the ceramic layer is used to bear a chip to be packaged and the inner leads and cooperates with a press-bonding head to press-bond the chip with the inner leads, and the ceramic layer is composed of aluminum nitride sintered body in 80wt% above.
Description
Technical field
The invention relates to a kind of chip encapsulating manufacturing procedure and equipment thereof, and particularly relevant for a kind of chip pressing base and application thereof that is used in encapsulation procedure.
Background technology
Among the chip package technology, cover brilliant thin-film package (Chip-On-Film package, COF) or winding carrying encapsulation (Tape Carrier package, TCP), mainly be to utilize to have flexual packaging film, winding or soft board, carrier (TapCarrier) as the lead with circuit pattern (Inner Lead) is engaged in chip (Die) on the encapsulation coiling belt by the hot pressing step, to reach continuously encapsulation automatically.
Please refer to Fig. 1, Fig. 1 is a kind of generalized section of covering the hot pressing device 100 of brilliant thin-film package that illustrates according to prior art.This existing hot pressing device 100 comprises a pressing head (Bonding Tool) 101, chip pressing base (Chip Bonding Stage) 103, heater 105 and cooling device (not illustrating).In the hot pressing step, when heater 105 was warmed to the preset working temperature with chip pressing base 103, the back side of at first using vacuum slot 104a and 104b grab chips 102 was fixed in chip 102 on the chip pressing base 103.Then pressing 101 is made hot pressing with chip 102 and the pin or the lead that are positioned on the film webs 107, removes after the pressing 101 with refrigerating gas moment again chip is lowered the temperature.
Traditionally, this chip hot pressing device is to adopt Ferrious material or the special steel material main material as chip pressing base 103, yet because the Ferrious material coefficient of expansion is bigger, and how under high temperature, to use for a long time, the surperficial 103a that pressing of chip pressing base 103 can produce softening transform, add that resistance to wear is not good, polishing condition can't be kept in the surface, therefore under long-term the use, cause metal crimp remained on surface colloid or scruff easily, even can make metal crimp the surface to produce burr and weigh crystal column surface wounded, and then the yield that chip package is engaged descends.Metal and peripheral part friction can produce static slightly on the other hand, and long-term buildup of static electricity causes the chip pin to be punctured by static easily, engage failure and cause.
Another kind of main material is that diamond film is deposited on the surface of the metal pedestal of preparing in advance.Yet,, can produce " bimetallic effect " when therefore heating and make the big person's extrusion expansion of coefficient of expansion coefficient smaller, and cause the deformation of chip pressing base 103 because diamond film is different with the coefficient of expansion of metal pedestal.Therefore, diamond film can only just can reach the requirement of production precision within specific range of temperatures, and the flip chip assembly process under the inapplicable all operations temperature, if same board uses several temperature to replace when producing, can't use same diamond film chip pressing base jointly.Again, because the production and the processing charges costliness of diamond film come off because of the cold and hot temperature difference or bump easily, useful life is not high, and the processing procedure cost is risen.Add the accumulation that to avoid static with metal material equally, also can influence the yields of encapsulation.
Summary of the invention
Therefore having to provide a kind of cost lower, and the life-span is longer, and surperficial on-deformable chip pressing base.
Purpose of the present invention is providing a kind of chip pressing base exactly, and this chip pressing base comprises a ceramic layer at least.Chip and lead that this ceramic layer will encapsulate in order to carrying, and cooperate a pressing head with chip and lead pressing, wherein ceramic layer is made of the above aluminum nitride sintered product of 80% (percentage by weight).
Another object of the present invention is providing a kind of chip pressing base device exactly.Among a preferred embodiment of the present invention, this chip pressing device comprises at least: pressing head, chip pressing base.Chip pressing base is positioned at the below of pressing head, has the polishing ceramic layer that comprises the above aluminum nitride sintered product of 80% (percentage), in order to carries chips and at least one lead, and cooperates the pressing head with chip and lead pressing.
Another object of the present invention is that a kind of hot pressing device that covers brilliant thin-film package processing procedure that is used in is being provided.Among another preferred embodiment of the present invention, this hot pressing device comprises: pressing head, chip pressing base and winding carrier.Chip pressing base is positioned at the below of pressing head, has the polishing ceramic layer that comprises the above aluminum nitride sintered product of 80% (percentage by weight), in order to carries chips.Winding carrier fixing has at least one lead, between chip and pressing head, when ceramic layer and pressing head are laminated, lead can be pressed on the chip.
According to above-described embodiment, technical advantage of the present invention, it is the chip pressing base that adopts the ceramic layer of the aluminum nitride sintered product that contains at least 80% (percentage by weight), carry out the hot pressing of encapsulation procedure, too high with the chip pressing base cost that solves prior art, useful life short and easy deformation problem.
Description of drawings
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, being described in detail as follows of accompanying drawing:
Fig. 1 is a kind of generalized section of covering the hot pressing device of brilliant thin-film package that illustrates according to prior art.
Fig. 2 is according to a preferred embodiment of the present invention, a kind of generalized section of covering the chip pressing device that brilliant thin-film package makes that is applicable to that is illustrated.
Fig. 3 is according to another preferred embodiment of the present invention, the generalized section of a kind of chip pressing base that is illustrated.
For the purpose of clear illustrating, the assembly in the icon not proportionally chi illustrated.Among different icons, the assembly cross reference number may have repetition, in order to indicate corresponding or similar assembly.
Description of reference numerals:
100,200: chip pressing device 101,201: pressing head
102,202,302: chip 103,203,303: chip pressing base
103a, 203a, 303a: pressing the surface
104a, 104b, 204a, 204b, 204a, 204b, 304a, 304b: vacuum slot
105,205,305: heater
106a, 106b, 206a, 206b, 306a, 306b: vacuum passage
108,208,308: cooled gas path
108a, 108b, 208a, 208b, 308a, 308b: hot gas tap
107,207: winding (carrier)
303b: ceramic layer 303c: base station
Embodiment
Purpose of the present invention is exactly the chip pressing base in a kind of hot pressing step that is used in encapsulation procedure is provided, it is characterized in that adopting having wholely for ceramic sintered bodies or having ceramic layer is bonded to chip pressing base on the metal seat stand, replace existing iron material, diamond film or other material.Wherein, this chip pressing base comprises a ceramic layer that contains the above aluminum nitride sintered product of 80% (percentage by weight) at least.This ceramic layer itself has the characteristic that manufacturing cost is lower, the surface is not easy to wear, thermal conduction characteristic is good and the coefficient of expansion is lower, can reduce the processing procedure cost that covers brilliant thin-film package processing procedure.
For above and other objects of the present invention, feature and advantage can be become apparent, be described as follows especially exemplified by preferred embodiment.At the following embodiment that provides, be to be applicable to the chip pressing device that covers in the brilliant thin-film package processing procedure.It should be noted that other suitable encapsulation procedure also is suitable for this chip pressing device.
Please refer to Fig. 2, Fig. 2 is according to a preferred embodiment of the present invention, a kind of generalized section that is applicable to the chip pressing device that covers brilliant thin-film package processing procedure that is illustrated.This chip pressing device 200 comprises: pressing 201 and chip pressing base 203.Chip pressing base 203 has one and is pressing surperficial 203a, is wherein pressing surperficial 203a further to be polished or to process, to be used for carries chips 202.When pressing surperficial 203a and pressing 201 to be laminated, can be pressed on the chip at the lead (being immobilizated on the winding carrier 207) between chip 202 and the pressing 201.
Among present embodiment, this chip pressing base 203 is made of ceramic material fully, wherein this ceramic material sintered body that is the aluminium nitride compound.Wherein, aluminium nitride is preferably by aluminium nitride (AlN), or the allotrope of aluminium nitride constitutes.Among preferred embodiment of the present invention, the ceramic material that constitutes chip pressing base 203 is for containing the sintered body more than the aluminium nitride 80% (percentage by weight).Its formed chip pressing base 203 conductive coefficients then essence are that 170W/mK is between the 260W/mK; Coefficient of expansion essence is between 4.5 to 5, and hardness essence is 1800N/mm
2To 2000N/mm
2Between.Because the conductive coefficient of chip pressing base 203 is quite high, is beneficial to and heats fast and cool off.The coefficient of expansion is low, therefore can not cause distortion because of expanding with heat and contract with cold rapidly or cause the pressing base body to produce cracking, and make the precise decreasing of pressing surperficial 203a.Add the hardness and the diamond film (1965N/mm that are pressing surperficial 203a
2To 2000N/mm
2) close, therefore can bear the wearing and tearing and the bump of long-term use, can not produce burr, can not produce static because of friction yet.
Among some embodiments of the present invention, chip pressing base 203 can comprise a heat-transfer device, for example heat-conducting plate or heat conduction coil.The external heater 205 of heat-transfer device also contacts the thermal source when providing chip pressing base to carry out the hot pressing step by heat conduction with chip pressing base.Among preferred embodiment of the present invention, chip pressing base 203 directly contacts 205 with heater.
Among some embodiments of the present invention, chip pressing base 203 also has at least one vacuum slot and vacuum passage that at least one is corresponding, fixes the chip 202 that will carry out hot pressing by vacuum attraction, to carry out this hot pressing step.For example, chip pressing base 203 has several vacuum holes, and sketch such as 204a and 204b, each vacuum hole have the vacuum ditch to be connected to each other on the compression face of pressing base in addition and each vacuum passage 206a or 206b corresponding with one of vacuum hole 204a and 204b is communicated with.Wherein, vacuum passage 206a is connected a device for vacuum generation (not illustrating) with 206b, to provide chip pressing base 203 pull of vacuum, is used for fixing the chip 202 that will carry out pressing.
Among some embodiments of the present invention, also has a cooled gas path 208, one end produces with refrigerating gas or blowoff (not illustrating) is communicated with, be used for importing refrigerating gas, provide 203 1 the instantaneously cooled functions of chip pressing base after the heating, to avoid the high temperature torsional deformation of winding rete because of hot pressing.Among preferred embodiment of the present invention, cooled gas path 208 also comprises two hot gas tap 208a and 208b, among hot-air discharge chip pressing base 203.
Please refer to Fig. 3, Fig. 3 is according to another preferred embodiment of the present invention, the generalized section of a kind of chip pressing base that is illustrated.Wherein, chip pressing base 203 structures that chip pressing base 303 and Fig. 2 that Fig. 3 illustrated illustrated are roughly similar, and difference only is that chip pressing base 203 is made of ceramic material fully, and chip pressing base 303 then has only part to be made of ceramic material.
Among present embodiment, chip pressing base 303 comprises that at least a ceramic layer 303b is covered on the base station 303c.Wherein, ceramic layer 303b has one and is pressing surperficial 303a further to be polished or to process, to be used for that chip is carried out the hot pressing step.Base station 303c can be made up of special steel material or other ceramic material of Ferrious material.
Wherein, ceramic layer 303b contains aluminium nitride, is preferably by aluminium nitride (AlN) or the aluminium nitride allotrope is constituted.Among preferred embodiment of the present invention, ceramic layer 303b surpasses the above sintered body of 80% (percentage by weight) by aluminium nitride content to be constituted.Ceramic layer 303b conductive coefficient then essence is that 170W/mK is between the 260W/mK; Coefficient of expansion essence is between 4.5 to 5, and hardness essence is 1800N/mm
2To 2000N/mm
2Between.Because the conductive coefficient of ceramic layer 300b is quite high, is beneficial to and heats fast and cool off.The coefficient of expansion is low, therefore can not cause distortion because of expanding with heat and contract with cold rapidly, and make the precise decreasing of pressing surperficial 303a.Add that the hardness of pressing surperficial 303a is close with diamond film (1965N/mm is to 2000N/mm), therefore can bear the wearing and tearing and the bump of long-term use, can not produce burr, also can not produce static because of friction.
Among some embodiments of the present invention, chip pressing base 303 can comprise a heat-transfer device, for example heat-conducting plate or heat conduction coil.The external heater 305 of heat-transfer device also contacts the thermal source when providing chip pressing base to carry out the hot pressing step by heat conduction with chip pressing base.Among the some embodiments of the present invention example, chip pressing base 303 also has at least one vacuum slot and vacuum passage that at least one is corresponding, each vacuum hole has the vacuum ditch to be connected to each other on the compression face of pressing base in addition, fix the chip that will carry out hot pressing by vacuum attraction, to carry out this hot pressing step.For example, chip pressing base 303 has two vacuum slot 304a and 304b, and each vacuum passage 306a or 306b corresponding with one of vacuum slot 304a and 304b is communicated with.Wherein, vacuum passage 306a is connected a device for vacuum generation (not illustrating) with 306b, to provide chip pressing base 303 pull of vacuum, is used for fixing the chip 302 that will carry out pressing.
Among some embodiments of the present invention, also has a cooled gas path 308, one end is communicated with refrigerating gas generation device (not illustrating), be used for importing refrigerating gas, provide 303 1 the instantaneously cooled functions of chip pressing base after the heating, to avoid the high temperature torsional deformation of winding rete because of hot pressing.Among preferred embodiment of the present invention, cooled gas path 308 also comprises two hot gas tap 308a and 308b, among hot-air discharge chip pressing base 303.
By the invention described above preferred embodiment as can be known, technical advantage of the present invention is, adopts ceramic material to replace existing ferrous material and the diamond film pressing surface as chip pressing base.Wherein, the ceramic material coefficient of expansion provided by the present invention is low, thermal conductivity is high, hardness is big, high temperature resistant and be difficult for producing deformation among the cooling that heats up rapidly, and it is shorter to solve the above-mentioned material life-span, the problem that yields is lower.It is lower and machinability is high to add the ceramic material cost of manufacture, through the reusable reduction processing procedure cost of processing, can reach above-described purpose.
Though the present invention with preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; all can do various changes and modification, so protection scope of the present invention is with being as the criterion that claim was defined.
Claims (10)
1. chip pressing base, be applicable to a chip encapsulating manufacturing procedure, it is characterized in that, this chip pressing base comprises a ceramic layer at least, described ceramic layer is in order to carry a chip and at least one lead, and cooperate a pressing head with described chip and these lead pressings, described ceramic layer is made of the above aluminum nitride sintered product of 80% (percentage by weight).
2. chip pressing base as claimed in claim 1 is characterized in that, described aluminum nitride sintered product is the allotrope sintered body of aluminum nitride sintered product or aluminium nitride.
3. chip pressing base as claimed in claim 1 is characterized in that, described chip pressing base is whole to be made of described aluminum nitride sintered product.
4. chip pressing base as claimed in claim 1 is characterized in that, described chip pressing base also comprises an at least one vacuum hole and a vacuum passage, fixes described chip by the mode of using vacuum attraction.
5. chip pressing base as claimed in claim 1 is characterized in that described chip pressing base also comprises at least one cooled gas path, so as to importing a refrigerating gas, cools off described chip.
6. a chip pressing device is applicable to chip encapsulating manufacturing procedure, it is characterized in that, described chip pressing device comprises:
One pressing head; And
One chip pressing base, be positioned at the below of pressing head, wherein this chip pressing base has a ceramic layer, described ceramic layer is in order to carry a chip and at least one lead, and cooperate described pressing head with described chip and these lead pressings, described ceramic layer is made of the above aluminum nitride sintered product of 80% (percentage by weight).
7. chip pressing device as claimed in claim 6 is characterized in that, described aluminum nitride sintered product is the allotrope sintered body of aluminum nitride sintered product or aluminium nitride.
8. chip pressing device as claimed in claim 6 is characterized in that, described chip pressing base is whole to be made of described aluminum nitride sintered product.
9. chip pressing device as claimed in claim 6 is characterized in that, described chip pressing base also comprises an at least one vacuum hole and a vacuum passage, fixes described chip by the mode of using vacuum attraction.
10. chip pressing device as claimed in claim 6 is characterized in that described chip pressing base also comprises at least one cooled gas path, so as to importing a refrigerating gas, cools off described chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100676274A CN100426480C (en) | 2006-03-06 | 2006-03-06 | Chip pressing base and its application device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100676274A CN100426480C (en) | 2006-03-06 | 2006-03-06 | Chip pressing base and its application device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101034675A true CN101034675A (en) | 2007-09-12 |
| CN100426480C CN100426480C (en) | 2008-10-15 |
Family
ID=38731125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100676274A Active CN100426480C (en) | 2006-03-06 | 2006-03-06 | Chip pressing base and its application device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100426480C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555906A (en) * | 2015-01-26 | 2015-04-29 | 中航（重庆）微电子有限公司 | Chip packaging method |
| CN110246782A (en) * | 2019-05-29 | 2019-09-17 | 鋐源光电科技（厦门）有限公司 | A kind of hot pressing syncephalon of COF encapsulation and preparation method thereof |
| CN113797984A (en) * | 2021-09-10 | 2021-12-17 | 姜春梅 | Full-automatic accurate involution device of polymer chip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4848639A (en) * | 1988-09-29 | 1989-07-18 | Ag Communication Systems Corporation | Compliant pad for use in tape automated bonding process |
| CN1050590C (en) * | 1994-08-02 | 2000-03-22 | 武汉工业大学 | Reaction agglutination for preparing nitriding aluminium and composite ceramic |
| JP3317226B2 (en) * | 1998-01-16 | 2002-08-26 | ソニーケミカル株式会社 | Thermocompression bonding equipment |
| CN1212288C (en) * | 2003-01-10 | 2005-07-27 | 清华大学 | Aluminium nitride ceramic with high heat conductivity |
-
2006
- 2006-03-06 CN CNB2006100676274A patent/CN100426480C/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555906A (en) * | 2015-01-26 | 2015-04-29 | 中航（重庆）微电子有限公司 | Chip packaging method |
| CN110246782A (en) * | 2019-05-29 | 2019-09-17 | 鋐源光电科技（厦门）有限公司 | A kind of hot pressing syncephalon of COF encapsulation and preparation method thereof |
| CN110246782B (en) * | 2019-05-29 | 2021-09-14 | 鋐源光电科技（厦门）有限公司 | Thermal bonding head for COF packaging and preparation method thereof |
| CN113797984A (en) * | 2021-09-10 | 2021-12-17 | 姜春梅 | Full-automatic accurate involution device of polymer chip |
| CN113797984B (en) * | 2021-09-10 | 2022-04-26 | 姜春梅 | Full-automatic accurate involution device of polymer chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100426480C (en) | 2008-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3057125B1 (en) | Substrate for heat sink-equipped power module, and production method for same | |
| EP2833398B1 (en) | Power module substrate, and method for manufacturing a power module substrate | |
| US7749430B2 (en) | Member for semiconductor device and production method thereof | |
| US9984951B2 (en) | Sintered multilayer heat sinks for microelectronic packages and methods for the production thereof | |
| CN110383468A (en) | Flange-cooled power module substrate | |
| US11147156B2 (en) | Composite member, heat radiation member, semiconductor device, and method of manufacturing composite member | |
| WO2007074720A1 (en) | Semiconductor element mounting substrate, semiconductor device using the same, and process for producing semiconductor element mounting substrate | |
| JP4848539B2 (en) | Heat sink, power semiconductor module, IC package | |
| JP3922538B2 (en) | Manufacturing method of ceramic circuit board | |
| CN110383469B (en) | Substrate with radiating fin for power module | |
| JPWO2016125419A1 (en) | Semiconductor device | |
| WO2000034539A1 (en) | Composite material and use thereof | |
| EP3496139A1 (en) | Heat dissipation structure for electric circuit device | |
| TW202020106A (en) | Method of producing semiconductor device, thermoconductive sheet, and method of producing thermoconductive sheet | |
| EP3740968B1 (en) | Power electronics module and a method of producing a power electronics module | |
| US20190122955A1 (en) | Semiconductor device and method for manufacturing same | |
| JP5407881B2 (en) | Power module manufacturing method and power module manufactured by the method | |
| CN101034675A (en) | Chip pressing base and its application device | |
| US20070020908A1 (en) | Multilayer structure having a warpage-compensating layer | |
| EP3888836A1 (en) | Bonded body, heat sink-attached insulated circuit board, and heat sink | |
| CN200953343Y (en) | Chip clamping base and applying device thereof | |
| US9349704B2 (en) | Jointed structure and method of manufacturing same | |
| JP5790196B2 (en) | Manufacturing method of semiconductor device | |
| CN113363182B (en) | Hot pressing process, manufacturing method of BGA product and BGA product | |
| JP2003258167A (en) | Structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191223 Address after: Room 701, building B, Jianye Building, industrial zone, torch high tech Zone (Xiang'an), Xiamen City, Fujian Province Patentee after: Hong source photoelectric technology (Xiamen) Co., Ltd. Address before: 1 / F, 7 / F, No. 678, Section 1, Jingguo Road, Xinzhu, Taiwan, China Patentee before: Yufu Semiconductor Material Science-Technology Co., Ltd. |
|
| TR01 | Transfer of patent right |