CN101026096A - Removal of silicon oxycarbide from substrates - Google Patents
Removal of silicon oxycarbide from substrates Download PDFInfo
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- CN101026096A CN101026096A CN 200610162381 CN200610162381A CN101026096A CN 101026096 A CN101026096 A CN 101026096A CN 200610162381 CN200610162381 CN 200610162381 CN 200610162381 A CN200610162381 A CN 200610162381A CN 101026096 A CN101026096 A CN 101026096A
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- oxycarbide
- oxygen
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- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.
Description
Technical field
Embodiments of the invention relate to the oxycarbide of removing silicon from substrate, particularly when reclaiming test substrate.
Background technology
When making electronic device, various materials can be deposited on the substrate such as semiconductor wafer or display panel, perhaps subsequently by from substrate etching, to form the feature such as via hole, dopant areas and interconnection line.These materials can comprise metal-containing material, for example aluminium, copper, tantalum, tungsten and their compound.Other material that is deposited on the substrate comprises a plurality of layers of dielectric (such as silica or silicon nitride) and low k (low-k) material that is isolated from each other that are used for distribution and pattern.Can use and comprise that sputter (being also referred to as physical vapour deposition (PVD) or PVD), chemical vapor deposition (CVD) and heat are grown in interior various technology and deposit these different materials.Except deposition materials, can also carry out other manufacturing process, comprise with impurity doped semiconductor layer, diffusion, ion injection, etching, chemistry and mechanical polishing (CMP), cleaning and heat treatment.
In these manufacturing process, the test substrate that comprises silicon wafer usually is used to guarantee that technology moves in suitable standard.Used test substrate can be recovered, rather than after test substrate is used to test specific technology it is abandoned.Reclaim technology and generally comprise and remove sedimentary deposit or material, and alternatively, even remove the below silicon materials of a part, make the reservation silicon materials of test substrate be cleaning and do not contain substantially and add material or other pollutant.Thereby, reclaim technology and be intended to test substrate is returned to the standard identical with new test substrate.
The conventional method that is used to reclaim substrate comprises following some technology, for example, and chemical etching, grinding or polishing.Wet chemical etch generally comprises substrate is immersed in acidity or the alkaline body lotion, so that unnecessary material is removed from substrate.Dry method chemical etching (being also referred to as plasma etching) is included in the vacuum chamber and by being exposed to plasma gas excess stock is removed from substrate.Grinding and polishing comprise use abrasive media and polishing slurries planarization and attenuate substrate and deposited material layer are removed.
In the recovery of test substrate, difficulty is the oxycarbide of removing the silicon of deposition especially, because it has inorganic and two kinds of compositions of carbon, comprises the unformed silica that for example has high carbon content, and can comprise other material, such as nitrogen and hydrogen.When the composition that provides less than about 3.5 low-k (k) was provided for the oxycarbide of silicon, it can be used as advanced low-k materials (oxycarbide of silicon).Low K dielectrics has reduced the RC time of delay in the integrated circuit, allows correspondingly to increase metal interconnected density, thereby allows littler circuit.Therefore, the deposition of the low K dielectrics such as the oxycarbide of silicon is important for making littler and meticulousr circuit (having the characteristic size less than 90nm).In these depositing operations, test substrate is used to guarantee that deposition has the oxycarbide that regulation is hanged down the silicon of k character on substrate.
It is desirable to, reclaim and re-use the test substrate of the technology of the oxycarbide that is used to test silicon.Yet the removal technology of the oxycarbide of conventional silicon usually can not suitably be removed described material from test substrate.For example, the oxycarbide of silicon usually is difficult to be removed by chemistry, because inorganic and combination organic element makes this material lower for the reactivity of number of chemical composition, and such composition may stay viscose glue shape residue on substrate.Equally, such as grind and polishing the conventional means warpage that may cause substrate owing to be applied to uneven pressure on the substrate.Polishing also causes too much scuffing or the subsurface lattice damage on the substrate surface.Such surface damage influences the subsequent deposition process characteristic of substrate surface unfriendly, thereby changes the result of depositing operation.Therefore, the conventional substrate that reclaims usually only is only applicable to as mechanical level testing wafer (for example, be used for the manipulator test, be used to estimate accurate wafer orientation), and can not be suitable as the test level substrate that is used to estimate deposition or etching technics.Conventional removal method also may erode the substrate surface of volume, before having to substrate abandoned, had limited the number of times that test substrate can be recovered and re-use.Therefore, the removal technology of the oxycarbide of Chang Gui silicon usually can not provide gratifying removal re-using with the permission test substrate for these materials.
Therefore, it is desirable to, the method for inorganic and carbon component that use can be removed the oxycarbide material of silicon is removed the oxycarbide of silicon from substrate.Also it is desirable to, obtain a kind of method, this method can not cause warpage, surface tear or the surface damage down of substrate.Also it is desirable to, can remove to the productive method cost efficient of apparatus the oxycarbide of silicon.
Summary of the invention
Comprise that in a kind of processing the oxycarbide of silicon is removed from substrate in the method for substrate of oxycarbide of silicon.The oxycarbide of the silicon on the substrate is less than or equal to about 400 ℃ temperature and by decarburization by being exposed to oxygen-containing gas and simultaneously substrate being heated to, thereby the oxycarbide of silicon is converted into silica.By silica being exposed to fluorine-containing acid solution removal silica; Perhaps, remove the silica of whole substantially thickness, remove silica by substrate being exposed to the plasma process gas that comprises fluoro-gas.In initial process step, the oxycarbide of silicon also can be deposited on the substrate.
A kind of substrate-treating apparatus that can carry out these technologies comprises reactor, and described reactor comprises: case, and described case comprises the bearing that is used to admit substrate, described substrate has the oxycarbide layer of silicon; The gas access is used for oxygen-containing gas is incorporated into the chamber; And heater, be used for the substrate of heating chamber, to remove the silica on the substrate.In addition, substrate-treating apparatus also comprises bathing pool, is used to admit the substrate with silica, and described bathing pool comprises fluorine-containing acid solution, is used to remove the silica on the substrate.
In another approach, comprise that the substrate of the oxycarbide of silicon is placed in the plasma slab, and comprise that the process gas of fluoro-gas and oxygen-containing gas is introduced in the plasma slab.Process gas is maintained under the pressure of the about 2000mTorr of about 200mTorr-.The RF energy of the power level by will about 2000 W of about 200W-is coupled to process gas, excites process gas.The substrate-treating apparatus that can carry out this technology comprises plasma chamber, and described plasma chamber comprises: case, and described case has the bearing that is used to admit at least one substrate; The gas access is used for process gas is incorporated into the chamber; The gas exciter is used for keeping the plasma of the process gas of described chamber; And the discharge port, be used for from chamber removal process gas.
Description of drawings
According to the accompanying drawing that embodiments of the invention have been described, explanation subsequently, claim, these features of the present invention, aspect and advantage will become better understood.Yet, should be appreciated that each feature can be usually used for the present invention, and is not only in specific accompanying drawing, the present invention includes the combination in any of these features, in the accompanying drawings:
Figure 1A is the schematic cross sectional views that the oxycarbide of silicon is deposited substrate thereon;
Figure 1B shows the schematic cross sectional views of the treated substrate of Figure 1A after the oxycarbide of removing silicon;
Fig. 2 is the schematic cross sectional views that comprises the substrate-treating apparatus of the reactor that can carry out decarburization to the oxycarbide of the silicon on a collection of substrate;
Fig. 3 is the schematic cross sectional views that the wet chemistry of substrate-treating apparatus is bathed; And
Fig. 4 is the schematic cross sectional views of another embodiment of the plasma chamber of substrate-treating apparatus.
Embodiment
Being used for efficiently handling substrate 20 allows for example substrate to be re-used as depositing or the testing wafer of other technology with the technology of removing the oxycarbide 22 of silicon from substrate 20.Though the removal technology of the oxycarbide of silicon has been described under the situation of the oxycarbide layer that is initially deposited test substrate removal silicon thereon from material, but should be appreciated that this removal technology can be used for removing all or the oxycarbide material of the silicon of etched portions or layer from substrate (comprising the product substrate of making integrated circuit and display panel on it).The oxycarbide 22 of silicon generally includes the silica with the about 40wt% carbon of about 5-, and can comprise other material, such as nitrogen or hydrogen.The oxycarbide 22 of silicon can be by (for example, being used to form " BLACKDIAMOND by what the Applied Materials of California Santa Clara provided such as the depositing operation of chemical vapor deposition method or liquid precursors spin coating proceeding
TM" or " SILK
TM" technology) form.The oxycarbide 22 of silicon comprises the dielectric constant less than about 3.5 (for example from about 2 to about 3.4).The oxycarbide 22 of silicon can be formed on the surface below 26 of wafer 24, and described wafer 24 can for example be silicon or compound semiconductor wafer, and, the oxycarbide 22 of silicon can in addition the surface below 26 of basic cover wafers 24, shown in Figure 1A.The oxycarbide 22 of silicon can comprise substantially and is the film on plane (as shown in the figure), perhaps can comprise the layer that wherein has a plurality of etch features.The oxycarbide 22 of silicon can also be formed on one or more side surface 28 of wafer 24.Remove technology and remove the oxycarbide 22 of silicon ideally from substrate 20, and not corrosion excessively or the otherwise wafer 24 of damage below substantially, thereby allow wafer to be re-used in follow-up test and/or processing.
In a scheme, a kind of method of removing the oxycarbide 22 of silicon comprises substrate 20 is heated to and is less than or equal to about 400 ℃ temperature, simultaneously its surface 30 is exposed to oxygen-containing gas.In heating, the surface 30 is exposed to oxycarbide 22 decarburizations that oxygen-containing gas makes silicon, forms and have than low carbon content or the silica that do not have carbon content substantially.Usually, the oxycarbide 22 of silicon has many holes, and these holes allow oxygen-containing gas to be penetrated in the material, to react with the carbon that is in the interior zone, forms the escaping gas such as carbon dioxide and carbon monoxide.For example, the oxycarbide of unformed silicon can have the porosity of the about 40Vol% of about 2-.Suitable oxygen-containing gas comprises oxygen class material, for example, and O
2, O
3, H
2O, H
2O
2And composition thereof.Be suitable for the process conditions that the oxycarbide 22 to the silicon that comprises the about 40wt% carbon of about 5-carries out decarburization and comprise, substrate 20 is exposed to oxygen, simultaneously substrate is heated to about 250 ℃-Yue 300 ℃ temperature, continue about 80 minutes time of about 40-.
In a scheme of decarbonization process, the surface 30 of the oxycarbide 22 of silicon is exposed in the oxygen-containing gas in the substrate-treating apparatus 25 that comprises reactor 40, while heated substrate 20, as shown in Figure 2.In this scheme, reactor 40 comprises the bearing 42 that is in the case 43, and bearing 42 is used to admit one or a collection of substrate 20 (as shown in the figure).Bearing 42 can comprise base 44, and base 44 has a plurality of parallel bulges 46, and described bulge 46 is isolated, with support substrates 20 in the groove of definition betwixt.Shown in scheme in, reactor 40 has the coil 48 around reactor body, coil 48 is by power feeding mechanism 50 power supply.Process gas source 52 can be oxygenous body source, and it will comprise that the process gas of oxygen-containing gas for example is provided to the gas access 54 of reactor 40.Useless oxygen-containing gas and discharge from reactor via discharging port 56 such as the gaseous by-product of carbon monoxide and carbon dioxide, described discharge port 56 can be connected to exhaust pump or lead to atmosphere.Controller 58 is controlled the operation of reactor 40 by control gaseous valve 60 and power feeding mechanism 50.Controller 58 comprises the power level that is used for setting power feeding mechanism 50 continuing the program code of desired heating time, and the operation that is used for control valve 60 is with the program code of the process gas flow rate that is set to reactor 40.
In a scheme, by using coil 48 heated substrate 20 in reactor 40, the oxycarbide 22 of silicon is carried out decarburization, described coil 48 is heaters and comprises stratie.For example, coil 48 can be made by resistance material, and described resistance material for example is: NICHROME
TM, a kind of nichrome that is used for stratie, it has high resistance also can be high temperature resistant; Molybdenum disilicide; Perhaps other material.In this scheme, power feeding mechanism 50 is conventional resistance heater power feeding mechanisms, it can comprise closed-loop control system, and described closed-loop control system comprises thermocouple and the digital temperature reader that is used for making the PID automatic temperature controller of electric current by resistive heater, is used to measure the temperature of reactor 40.The heater power feeding mechanism can also have scalable minimum or the maximum current limit and the heating rate able to programme and the time of staying.The case 43 of reactor 40 can be made by for example silica, quartz or aluminium oxide.During heating, reactor 40 can be constantly with the oxygen-containing gas flushing, to keep high oxygen content.Oxygen-containing gas in the reactor 40 is (such as O
2) suitable flow rate can be for example arrive about 5000sccm for about 2000sccm.Though shown in heater in the scheme be coil 48, also can use other heater such as plane or tubular heater.
Become in the example in another technology, come the oxycarbide 22 of silicon is carried out decarburization by surface 30 is exposed to the plasma that forms in reactor 40.In this scheme, reactor 40 is plasma chambers, and it is used to form and comprises the plasma that excites process gas, for example comprises the process gas that excites of oxygen carrier.In this scheme, the oxygen-containing gas in the reactor 40 is excited to plasmoid, has the oxygen atom of high oxidative capacity with formation, comes the oxycarbide 22 of the silicon on the oxidation substrate 20.Process gas can also comprise the diluent gas such as nitrogen or argon gas.Process gas can excite by RF or microwave energy are applied to gas.For example, in a scheme, a collection of substrate 20 is placed in the reactor 40, and be exposed to by applying the plasma that electric current forms to coil 43, in this scheme, coil 43 is gas exciters, and it comprises by formed the induction coil that plasma produces heat by the oxygen-containing gas in the reactor 40.Induction coil is powered, energy-sensitive is coupled to the oxygen-containing gas in the reactor 40.Power feeding mechanism 50 is induction coil power feeding mechanisms, and it applies suitable power level with excited gas, such as the power level from about 200W to about 2000W.Oxygen-containing gas flow in the plasma chamber to the flow rate of about 500sccm with about 250sccm, and gas is maintained under the pressure from about 200mTorr to about 2000mTorr.If without induction coil, oxygen-containing gas also can be excited by the electrode (not shown) around the wall of reactor 40 or the microwave applicator (not shown) of reactor 40 outsides.
The oxycarbide 22 of silicon be exposed to oxygen-containing gas and heating be converted into the oxycarbide 22 of silicon that will be whole substantially comprise than in the past more lower level carbon or carbon-free substantially silica 22 after, can use the wet chemical etch step to remove the not oxidized portion of remnants of the oxycarbide of this silica and original silicon.In wet chemical etch process, substrate 20 is dipped in the bathing pool 70 of substrate-treating apparatus 25, as shown in Figure 3.Bathing pool 70 comprises the chemical etching agent solution 72 that is in the container 74, and described container 74 is made by the material of chemically-resistant etching agent solution.Select the composition of chemical etching agent solution 72, etching away silica 22, and do not corrode the silicon of the below of substrate 20 substantially.In a scheme, the chemical etching agent solution comprises for example fluorine-containing acid solution, and it can remove silica 22.The suitable containers 74 of anti-fluorine-containing acid solution comprises polymer container.In one embodiment, fluorine-containing acid solution comprises that concentration is the HF of about 1vol% to about 12vol%.
Chemical etching solution can also comprise the carbon removal component, its can with the oxycarbide reaction of the carbonaceous material of any remnants in the silica 22 or remaining silicon.Fluorine-containing acid solution and carbon removal component one same-action destroy silicon-oxygen species in the oxycarbide 22 of silicon and the bonding in the carbonizable substance, remove silica and remaining carbon from substrate 20 thus.In a scheme, suitable carbon removal component comprises H
2SO
4For example, solution can comprise the HF of the about 10wt% of about 1wt%-, and the H of the about 40wt% of about 30wt%-
2SO
4HF and H in solution
2SO
4Desirable mol ratio can be from about 1: 10 to about 1: 20.Though in a scheme, the chemical etching agent solution can be substantially by HF and H
2SO
4Form, but in other scheme, solution can comprise other component, such as HNO
3, H
2O
2And NH
4At least a among the F.The suitable immersion time can be from about 10 minutes to about 60 minutes.The chemical etching agent solution can be removed the oxycarbide 22 of most silicon, comprise any residual layer 22 through oxidation and unoxidized part, and comprise not the composition of substrate 20 that can the excessive corrosion below.
Carry out the silica that decarburization forms if remove by oxycarbide 22 to silicon without wet-etching technology, also can be exposed to the plasma that in the reactor 40 of Fig. 2, forms by surface 30 with silica, use the dry plasma body technology to remove silica and remaining carbon (if any), in this scheme, reactor 40 is plasma chambers.In this scheme, plasma comprises the excited gas of the fluorine-containing material that is stimulated.The process gas that comprises fluoro-gas is introduced in reactor 40 and is excited to plasmoid, and to form fluorine material, this fluorine material and silica reaction form volatile silicon fluoride, and described silicon fluoride is discharged from reactor 40.Fluoro-gas can be CF for example
4, NF
3Perhaps SF
6Fluoro-gas can also comprise oxygen-containing gas, all gas as previously mentioned.Fluoro-gas also can excite by RF or microwave energy are applied to gas.For example, in a scheme, being placed on a plurality of substrates 20 in the reactor 40 is exposed to by electric current being applied to the fluoro plasma that contains that coil 43 forms, in this scheme, coil 43 serves as the gas exciter and is induction coil, is used for forming plasma at reactor 40 by gas by energy-sensitive being coupled to gas.Power feeding mechanism 50 applies suitable power level with excited gas, such as the power level from the about 2000W of about 200W-.Fluoro-gas flows into the chamber with the flow rate from the about 700sccm of about 100sccm-, and gas is maintained under the pressure of the about 2000mTorr of about 200mTorr-.
In another technology, the oxycarbide 22 of the silicon on the substrate 20 in a plasma process step not only by decarburization but also be removed its silica content.In this technology, the surface 30 of the oxycarbide 22 of silicon is exposed to the plasma of the process gas that comprises fluoro-gas and oxygen-containing gas in the reactor 40 of Fig. 2.In this scheme, fluoro-gas forms fluorine material, and this fluorine material and silica reaction form volatile silicon-fluorine material, the carbon reaction in the oxycarbide 22 of oxygen-containing gas and silicon, carbon-oxygen species formation such as carbon monoxide and the carbon dioxide is discharged them from reactor 40 then.Oxygen-containing gas can for example be O
2, O
3, H
2O, H
2O
2And composition thereof; And fluoro-gas can for example be CF
4, NF
3Perhaps SF
6By being applied to gas, RF or microwave energy excite process gas.As shown in the figure, a plurality of substrates 20 can be placed in the reactor 40, and are exposed to by electric current being applied to induction coil 43 energy-sensitive is coupled to the plasma that process gas forms.Power feeding mechanism 50 applies suitable power level to excite process gas, such as the power level from the about 2000W of about 200W-.Process gas flows in the chamber with the flow rate of the about 1200sccm of about 300sccm-, and gas is maintained under the pressure of the about 2000mTorr of about 200mTorr-, with whole layer of the oxycarbide 22 of the silicon on the basic removal substrate 20.
In above-mentioned technology, the oxycarbide 22 of silicon is removed from substrate 20.The oxycarbide 22 of silicon can utilize substrate-treating apparatus 102 to be formed on the substrate 20, and substrate-treating apparatus 102 comprises CVD (Chemical Vapor Deposition) chamber 106, and embodiment is shown among Fig. 4.Chamber 106 can form the oxycarbide 22 of silicon on new substrate 20, perhaps form the oxycarbide 22 of silicon on the substrate that is recovered after the oxycarbide 22 of the silicon of removing previous deposition.Chamber 106 comprises leg 118, and described leg 118 comprises top board 119, sidewall 121 and diapire 122, and they limit process island 113 together.For example, in a scheme, leg 118 comprises the top board 119 of part dome, and top board 119 is in the top of process island 113.Deposition gases can be incorporated in the chamber 106 by gas supply source 130, and gas supply source 130 comprises deposition gas source 131 and gas distributor 132.Shown in scheme in, gas distributor 132 comprises one or more conduit 133, described conduit 133 has one or more gas flow valve 134a and 134b and one or more and is in the outlet 135b and the 135c of substrate 20 tops around the gas vent 135a of the periphery of substrate 20 and one or more, so that the deposition gases stream of optimization to be provided in chamber 106.Electrode 145 in the electrostatic chuck 108 of substrate holder 100 can be by electrode power feeding mechanism 143 power supply, with during handling with chip static electricity remain on the abutment surface 180.Wafer transport device 153 also can be provided to substrate 20 is arranged on the wafer admittance surface 180 of bearing 100.Useless process gas and process byproducts 106 are discharged from the chamber by discharge system 120, and described discharge system 120 can comprise: discharge conduit 127, it receives the process gas that gives up from process island 113; Choke valve 129, the process gas pressure in its control room 106; And one or more exhaust pump 140.
In a scheme, can excite deposition gases by gas exciter 116, to handle substrate 20, described gas exciter 116 comprises antenna 117, antenna 117 has one or more inductor coil 111a and 111b, described inductor coil 111a and 111b can have the circular symmetry about the center of chamber 106, with the process gas in the process island 113 that energy is coupled to chamber 106.For example, antenna 117 can comprise around the first inductor coil 111a at the top of the dome plate 119 of chamber 106 with around the second inductor coil 111b of the sidepiece of dome top board 119.Inductor coil can be powered separately by first, second RF power feeding mechanism 142a, 142b.Gas exciter 116 can also comprise one or more process electrode, and described process electrode can be powered and excite process gas.Remote chamber 147 can also be set excite process gas such as clean air, described process gas excites by the power feeding mechanism 149 that RF or microwave energy is coupled to remote chamber 147, and excited gas can be transported to chamber 106 via the conduit 148 with flow valve 134c, for example cleans described chamber.
In order for example to handle substrate 20 by the oxycarbide dielectric layer 22 that forms silicon on substrate 20, process chamber 106 is drained and remains under the predetermined negative pressure.Then, substrate 20 is provided on the bearing 100, and, substrate 20 can be remained on the bearing 100 by applying voltage via the electrode 145 of electrode power feeding mechanism 143 in bearing 100 by wafer transport device 153.Gas supply source 130 is provided to chamber 106 with process gas, and gas exciter 116 is coupled to process gas with RF or microwave energy, handles substrate 20 with excited gas.The effluent that produces in technical process is by discharge system 120 106 discharges from the chamber.
In operation, the oxycarbide material of silicon deposits by following operation: organosilan precursor gas and oxygen or ozone are flow in the chamber 106, and with substrate 20 be heated to for example about 300 ℃ to about 400 ℃ temperature.Depositing operation is a hot CVD technology, and this hot CVD technology is used to form the oxycarbide of the silicon with enough low dielectric constant.The organosilan precursor gas should have at least one silicon-carbon bond, such as methyl-monosilane, dimethylsilane (DMS), trimethyl silane (TMS), tetramethylsilane (T4MS) and phenyl methyl silane.Because its commercial availability and high silicon-carbon bond quantity, TMS and T4MS are preferred precursor gas.In an illustrative processes, the process gas that uses TMS, oxygen and helium to form.In an embodiment of such technology, at first, flow rate is that the helium of 2650sccm is introduced in the chamber 106, and gas flow is when being stabilized to the pressure of 3.5Torr, choke valve 129 is partially closed, and makes the pressure in the chamber 106 reach the deposition pressure level of expectation.In case reach desired pressure level and this pressure kept the several seconds, just process gas is flowed in the chamber 106, process gas comprises that flow rate is that the TMS of 1450sccm, oxygen and the flow rate that flow rate is 800sccm are the helium carrier gas of 400sccm.Process gas excites in order to the RF power that the power level of 950W is applied to the electrode of about 200 mils of spacing, with the oxycarbide 22 of depositing silicon on substrate 20.The wall 118 of chamber 106 can be maintained under about 50 ℃-60 ℃ temperature.Oxycarbide according to the silicon of such process deposits generally has the about 2.2g/cm of about 2.1-
3Density.Technology can also comprise the helium rinsing step of the flow rate of the additional plasma rinsing step of the helium carrier gas flow rate that adopts 1000sccm and 1850sccm.After the oxycarbide of depositing silicon, can in the stove of routine or vacuum, be heated to about 300 ℃-Yue 500 ℃ temperature and it be solidified to improve its anti-moisture absorption at least about 10 minutes by oxycarbide with silicon.
Invention has been described with reference to some preferred version of the present invention; But other scheme also is fine.For example, as tangible for the person of ordinary skill of the art, for example in the feature etching in the oxycarbide of silicon, can remove or partly remove the oxycarbide of the silicon of other type.In addition, as tangible for the person of ordinary skill of the art, can also be according to the parameter of described embodiment, use to be equivalent at removing described those the replaceable step of technology.Therefore, the spirit and scope of claim should not be limited to the description of the preferred version that this paper comprises.
Claims (20)
1. method that is used to handle the substrate of the oxycarbide that comprises silicon comprises:
(a) described substrate is heated to is less than or equal to about 400 ℃ temperature simultaneously by described substrate being exposed to oxygen-containing gas, with the oxycarbide decarburization of described silicon, the oxycarbide with described silicon is converted into silica thus; And
(b) by removing one of at least described silica on the described substrate in the following operation:
(i) described silica is exposed to fluorine-containing acid solution; Perhaps
(ii), remove the described silica of whole substantially thickness by described substrate being exposed to the plasma of the process gas that comprises fluoro-gas.
2. the method for claim 1, wherein (a) comprises described substrate is exposed to oxygen-containing gas, described oxygen-containing gas comprise in the following material one of at least:
(i) O
2Or O
3
(ii) H
2O; Perhaps
(iii)H
2O
2。
3. the method for claim 1, wherein (a) comprises the setting process conditions, to come the oxycarbide decarburization to described silicon by the carbon of removing the about 40 weight % of about 5 weight %-from the oxycarbide of described silicon.
4. the method for claim 1, wherein (a) comprises described substrate heating:
(i) arrive from about 250 ℃-Yue 300 ℃ temperature;
(ii) continue from about 40 minutes-Yue 80 minutes time;
(iii), wherein, excite described oxygen-containing gas with the plasma that forms oxygen-containing gas by the RF energy being coupled to described gas by exciting described oxygen-containing gas to heat; Perhaps
(iv) by electric current is heated by resistance heater.
5. the method for claim 1, wherein (b) comprises described substrate is exposed to fluorine-containing acid solution that described fluorine-containing acid solution comprises the HF of concentration from the about 12 volume % of about 1 volume %-.
6. the method for claim 1, wherein in (b), described fluoro-gas comprises CF
4, NF
3Or SF
6
7. the method for claim 1, wherein (b) also comprise in the following operation one of at least:
(i) described process gas is maintained at about under the pressure of the about 2000mTorr of 200mTorr-;
(ii) the energy of the power level by will the about 2000W of about 200W-is coupled to described process gas and keeps plasma.
8. the method for claim 1, wherein described process gas also comprises oxygen-containing gas.
9. method as claimed in claim 8, wherein, described fluoro-gas comprises CF
4, NF
3Or SF
6, described oxygen-containing gas comprises O
2Perhaps O
3
10. method as claimed in claim 8, wherein, described process gas comprises CF
4And O
2
11. the method for claim 1, wherein described technology comprises diluent gas.
12. method as claimed in claim 11, wherein, described diluent gas comprises nitrogen or argon gas.
13. the method for claim 1 is included in the initial step that deposits the oxycarbide of described silicon on the described substrate.
14. a substrate-treating apparatus comprises:
(a) reactor comprises:
(i) case, described case comprises the bearing that is used to admit substrate, described substrate comprises the oxycarbide of silicon;
(ii) the gas access is used for described oxygen-containing gas is incorporated into described reactor;
(iii) heater is used for heating the described substrate of described reactor, and the oxycarbide with described silicon is converted into silica thus; And
(b) comprise the bathing pool of fluorine-containing acid solution, be used to admit the substrate that comprises silica, to remove the described silica on the described substrate.
15. equipment as claimed in claim 14, wherein, described heater comprises the gas exciter of the plasma of the described oxygen-containing gas that is used for keeping described chamber, and described equipment also comprises the discharge port that is used for removing from described chamber described gas, thus the oxycarbide layer of described silicon by decarburization to form silica.
16. equipment as claimed in claim 14, wherein, described bearing can be admitted a plurality of substrates.
17. a substrate-treating apparatus comprises:
(a) reactor comprises:
(i) case, described case comprises the bearing that is used to admit a plurality of substrates, each substrate comprises the oxycarbide of silicon;
(ii) the gas access is used for described oxygen-containing gas is fed to described case;
(iii) heater can be less than or equal to about 400 ℃ temperature and comes the oxycarbide of described silicon is carried out decarburization by described substrate is heated to, and the oxycarbide with described silicon is converted into silica thus; And
(b) plasma chamber comprises:
(i) case, described case comprises the bearing that is used to admit at least one substrate, described substrate comprises silica;
(ii) the gas access is used for described fluoro-gas is incorporated into described chamber;
(iii) gas exciter is used for keeping the plasma of the described fluoro-gas of described chamber, and described thus silica and the reaction of described fluoro-gas form volatile silicon fluoride material; And
(iv) discharge port, be used to remove described volatility silicon fluoride material, remove the described silica on the described substrate thus.
18. equipment as claimed in claim 17, wherein, described plasma chamber comprises the bearing that is used to admit a plurality of substrates.
19. a substrate-treating apparatus comprises:
(a) plasma chamber comprises:
(i) case, described case comprises the bearing that is used to admit at least one substrate, described substrate comprises the oxycarbide of silicon;
(ii) the gas access is used for fluoro-gas is incorporated into described chamber;
(iii) gas exciter is used for keeping the plasma of the described fluoro-gas of described chamber, and the oxycarbide of described silicon and described fluoro-gas reaction thus forms volatile silicon fluoride material; And
(iv) discharge port, be used to remove described volatility silicon fluoride material, remove the described silica on the described substrate thus, on described substrate, to form remaining carbon-coating; And
(b) reactor comprises:
(i) case, described case comprises the bearing that is used to admit a plurality of substrates, each substrate comprises remaining carbon-coating;
(ii) gas distributor is used for oxygen-containing gas is fed to described case;
(iii) heater can be heated to described substrate and be less than or equal to about 400 ℃ temperature, with the carbon-coating of the described remnants on the described substrate of ashing.
20. a plasma chamber comprises:
(a) case, described case comprises the bearing that is used to admit at least one substrate, described substrate comprises the oxycarbide of silicon;
(b) gas access is used for process gas is incorporated into described chamber, and described process gas comprises fluoro-gas and oxygen-containing gas;
(c) gas exciter is used for keeping the plasma of the described process gas of described chamber, thus the oxycarbide of described silicon respectively with described fluoro-gas and the reaction of described oxygen-containing gas, form volatile silicon-fluorine material and carbon-oxygen species; And
(iv) discharge port, be used for removing described volatile silicon-fluorine material and carbon-oxygen species from described chamber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/359,301 | 2006-02-21 | ||
| US11/359,301 US7659206B2 (en) | 2005-01-18 | 2006-02-21 | Removal of silicon oxycarbide from substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101026096A true CN101026096A (en) | 2007-08-29 |
Family
ID=38744229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610162381 Pending CN101026096A (en) | 2006-02-21 | 2006-12-14 | Removal of silicon oxycarbide from substrates |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101026096A (en) |
| TW (1) | TW200733227A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103443906A (en) * | 2011-03-04 | 2013-12-11 | 应用材料公司 | Methods for contact clean |
| CN113013032A (en) * | 2016-03-01 | 2021-06-22 | 朗姆研究公司 | Method for performing Atomic Layer Etching (ALE) on a substrate |
| CN114787981A (en) * | 2019-12-03 | 2022-07-22 | 罗伯特·博世有限公司 | Device and method for processing at least one semiconductor substrate |
-
2006
- 2006-07-25 TW TW095127163A patent/TW200733227A/en unknown
- 2006-12-14 CN CN 200610162381 patent/CN101026096A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103443906A (en) * | 2011-03-04 | 2013-12-11 | 应用材料公司 | Methods for contact clean |
| CN103443906B (en) * | 2011-03-04 | 2016-03-30 | 应用材料公司 | The method of contact clean |
| CN113013032A (en) * | 2016-03-01 | 2021-06-22 | 朗姆研究公司 | Method for performing Atomic Layer Etching (ALE) on a substrate |
| CN114787981A (en) * | 2019-12-03 | 2022-07-22 | 罗伯特·博世有限公司 | Device and method for processing at least one semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200733227A (en) | 2007-09-01 |
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