CN101022687A - Device and method for adjusting luminous diode brightness - Google Patents
Device and method for adjusting luminous diode brightness Download PDFInfo
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- CN101022687A CN101022687A CNA2006100042635A CN200610004263A CN101022687A CN 101022687 A CN101022687 A CN 101022687A CN A2006100042635 A CNA2006100042635 A CN A2006100042635A CN 200610004263 A CN200610004263 A CN 200610004263A CN 101022687 A CN101022687 A CN 101022687A
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- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Abstract
A device used for adjusting brightness of LED consists of multiple parallel LED, multiple load set in corresponding to multiple LED, multiple node corresponding to multiple load and multiple LED, A/D converter, microprocessor, serial interface, pulse width adjustment generator and N bit bolt-lock output end buffer storage.
Description
Technical field
The present invention relates to a kind of apparatus and method of adjusting light-emitting diode luminance, relate in particular to a kind of at circuit that a plurality of light-emitting diode constituted, do current operator by detecting each node voltage, again with pulse duration adjustment (Pulse Width Modulation, PWM) method is carried out current compensation at each light-emitting diode, and makes each light-emitting diode present the apparatus and method of uniform state.
Background technology
Light-emitting diode (Light Emitting Diode, LED) principle of luminosity is for to apply forward current to light-emitting diode, can make it luminous, if forward current is in rated range, the luminous intensity of light-emitting diode is directly proportional with the current value of forward current, so we can learn that light-emitting diode is a kind of electronic component of current drives.
When the non-single use of the application of light-emitting diode, must make it form straight line, when forming a face (matrix) even, then a plurality of light-emitting diodes must be connected in the serial or parallel connection mode, to reach the demand, see also shown in Figure 1ly, be the circuit framework figure that known light-emitting diode connects with parallel way, wherein each light-emitting diode 11 is connected in series a load resistance 12 separately, but the forward voltage (V of each light-emitting diode 11
F) will be because of making the difference on material or the manufacturing process, and produce the difference of the forward voltage of each light-emitting diode 11.If voltage source (V) 13 be fixed value, when the forward voltage of light-emitting diode 11 more height, its luminosity is lower; Otherwise the forward voltage of light-emitting diode 11 is lower, and its luminosity is higher.In addition, see also shown in Figure 2, be the circuit framework figure of known light-emitting diode with the series system connection, wherein the inflow current of the light-emitting diode 11 of these a plurality of series connection is identical, so its luminous uniformity is than in parallel better, but still have uneven problem, but prerequisite be voltage source (V) 13 must be greater than a plurality of positive voltage of light emitting diode summations.
See also shown in Figure 3, be known a plurality of light-emitting diodes connect with parallel way and serial connection the is corresponding n channel metal oxide semiconductor field-effect transistor of opening drain electrode circuit framework figure as load, it includes: a plurality of light-emitting diodes 11, a plurality of nodes 14 and a plurality of n channel metal oxide semiconductor field-effect transistor 15, this framework often is applied in the matrix form display floater, this framework also as described in Figure 1, will be because of the forward current difference of each light-emitting diode 11, therefore current concentration causes the problem of display floater brightness irregularities in the lower light-emitting diode 11 of forward current.
Therefore, after no matter a plurality of light-emitting diodes carried out serial or parallel connection, its luminosity is inhomogeneous to become the problem that the utmost point need solve.
Summary of the invention
In order to solve the deficiency of above-mentioned known technology, the invention provides a kind of apparatus and method of adjusting light-emitting diode luminance, main purpose is the circuit at a plurality of light-emitting diode constituted, do current operator by detecting each node voltage, again with pulse duration adjustment (Pulse Width Modulation, PWM) method is carried out current compensation at each light-emitting diode, and makes the luminous uniform state that presents of each light-emitting diode.
For achieving the above object, the invention provides a kind of device of adjusting light-emitting diode luminance, it includes:
A plurality of light-emitting diodes arranged side by side;
A plurality of loads, corresponding a plurality of light-emitting diodes are set, with the magnitude of current of control flows to light-emitting diode, and the open and close light-emitting diode;
A plurality of nodes, corresponding a plurality of light-emitting diodes and a plurality of load are set, read so that voltage to be provided;
Analog/digital converter is done analog/digital conversion with the voltage signal of a plurality of nodes;
Microcontroller reads a plurality of node voltage values one by one, and the inquiry table of comparisons obtains the pairing current value of node voltage, and offset current and is sent compensating current signal to fiducial value one by one;
Serial interfaces is arranged between analog/digital converter and the microcontroller, as the signal transmission interface of the two;
Pulse duration is adjusted generator, receives the compensating current signal of microcontroller, and carries out the action of offset current; And
N position bolt-lock output port buffer is in order to the power output of control impuls width adjustment generator.
Preferably, the device of adjusting light-emitting diode luminance also includes N bit shift buffer, the signal that is transmitted in order to the receiving sequence interface, and with signal allocation to this N position bolt-lock output port buffer.
According to the device of described adjustment light-emitting diode luminance, wherein these a plurality of light-emitting diodes arranged side by side can be arranged as matrix, in order to as display floater.
According to the device of described adjustment light-emitting diode luminance, wherein these a plurality of loads are constituted by the n channel metal oxide semiconductor field-effect transistor.
According to the device of described adjustment light-emitting diode luminance, wherein the drain electrode of this n channel metal oxide semiconductor field-effect transistor is driven to open the drain electrode connected mode.
Device according to described adjustment light-emitting diode luminance, wherein to refer to get the light-emitting diode of minimum current value be benchmark to the offset current of this microcontroller to fiducial value, and will be higher than the current value of other a plurality of light-emitting diodes of this benchmark light-emitting diode, utilize pulse duration adjustment mode to be reduced.
According to the device of described adjustment light-emitting diode luminance, the transmission signals of this serial interfaces and microcontroller wherein includes enable signal, reads signal, write signal and data-signal.
According to the device of described adjustment light-emitting diode luminance, wherein this enable signal, read signal and write signal for utilizing negative edge triggering signal activation.
According to the device of described adjustment light-emitting diode luminance, wherein the voltage that component parameters produced that provides for different manufacture processes of this table of comparisons is to the table of comparisons of electric current.
The present invention also provides a kind of method of adjusting light-emitting diode luminance, and it includes the following step:
The first step, utilize analog/digital converter that the voltage signal of a plurality of nodes is done analog/digital conversion;
Second step, utilize microcontroller to read a plurality of node voltage values one by one, and the inquiry table of comparisons obtains the pairing current value of node voltage, and offset current and is sent compensating current signal to fiducial value one by one;
The 3rd goes on foot, utilizes the signal transmission interface of serial interfaces as analog/digital converter and microcontroller;
The 4th goes on foot, utilizes pulse duration to adjust the compensating current signal that generator receives microcontroller, and carries out the action of offset current; And
The 5th the step, utilize N position bolt-lock output port buffer, in order to the power output of control impuls width adjustment generator, to finish the action of each light-emitting diode being carried out current compensation.
According to the method for described adjustment light-emitting diode luminance, wherein also include the signal that utilizes N bit shift buffer receiving sequence interface to be transmitted between three steps of this step the and the 4th step, and with the step of signal allocation to this N position bolt-lock output port buffer.
According to the method for described adjustment light-emitting diode luminance, wherein the voltage that component parameters produced that provides for different manufacture processes of this table of comparisons in this step the second step is to the table of comparisons of electric current.
Below, the present invention is done more deep explanation by accompanying drawing, description of reference numerals and embodiment.
Description of drawings
Fig. 1 is the circuit framework figure that known light-emitting diode connects with parallel way.
Fig. 2 is the circuit framework figure that known light-emitting diode connects with series system.
Fig. 3 is known a plurality of light-emitting diodes connect with parallel way and serial connection the is corresponding n channel metal oxide semiconductor field-effect transistor of the opening drain electrode circuit framework figure as load.
Fig. 4 is the side circuit Organization Chart of light-emitting diode serial connection n channel metal oxide semiconductor field-effect transistor of the present invention as load.
Fig. 5 obtains I for Fig. 4 circuit utilizes call parameter
DThe table of comparisons of numerical value.
Fig. 6 adjusts the function square circuit diagram of light-emitting diode luminance for the present invention.
Fig. 7 imports the circuit framework figure of little processing by analog/digital converter for each light-emitting diode voltage signal.
Fig. 8 adjusts the serial interfaces of light-emitting diode luminance device and the transmission signals figure of microcontroller for the present invention.
Fig. 9 A adjusts the voltage data table of obtaining each light-emitting diode after the light-emitting diode luminance device is changed by analog/digital converter for the present invention.
Fig. 9 B adjusts the light-emitting diode luminance device for the present invention microcontroller according to Fig. 9 A data query table of comparisons to obtain I
DCurrent value and pulse duration are adjusted the ratio table of power.
Figure 10 adjusts the function square circuit diagram that the light-emitting diode luminance device utilizes pulse duration to adjust for the present invention.
Figure 11 for the present invention adjust the light-emitting diode luminance device get its minimum value as fiducial value to carry out the circuit framework figure that pulse duration is adjusted.
Wherein, description of reference numerals is as follows:
11 light-emitting diodes
12 loads
13 voltage sources
14 nodes
15N passage metal oxide semiconductor field effect transistor
21 light-emitting diodes
211 first light-emitting diodes
212 second light-emitting diodes
213 the 3rd light-emitting diodes
214 the 4th light-emitting diodes
215 n-1 light-emitting diodes
216 n light-emitting diodes
22 nodes
23 loads
3 microcontrollers
4 serial interfaces
5 analog/digital converters
6N position bolt-lock output port buffer
7 pulse durations are adjusted generator
8N bit shift buffer
Embodiment
Following conjunction with figs. illustrates detailed structure of the present invention, and connection relationship.
See also shown in Figure 4, be the side circuit Organization Chart of light-emitting diode serial connection n channel metal oxide semiconductor field-effect transistor of the present invention as load, wherein the light-emitting diode drive current depends on n channel metal oxide semiconductor field-effect transistor (N Channel Metal Oxide Semiconductor FieldEffect Transistor, I N-MOSFET)
DIf numerical value is n channel metal oxide semiconductor field-effect transistor V when conducting
GS=VH, and V
GD=V
F, this moment n channel metal oxide semiconductor field-effect transistor working region in three polar regions (The Triode Region), I
DThe voltage difference V that depends on drain electrode (D) and source electrode (S)
DS, and relevant for I
DComputing formula as follows:
I
D＝K[2(V
GS-V
T)V
DS-V
DS 2]
Please consult shown in Figure 5ly simultaneously, obtain I for Fig. 4 circuit utilizes call parameter
DIf the table of comparisons of numerical value is VH=12; V
T=0.8; V
GS=12; V
F MAX=4; V
DS MIN=8.In the above-mentioned formula of above-mentioned numerical value substitution, and Δ V=3V, suppose a plurality of V
FMaximum is 4V, and minimum value is 1V, I so
DElectric current is respectively 125.4K and 115.2K, and its difference ratio reaches 8.854%, but that is also gap to 8.854% of the luminosity of representing light-emitting diode, so just cause the uneven problem of dot matrix LEDs display brightness.
See also shown in Fig. 6,7, for the present invention adjusts the function square circuit diagram of light-emitting diode luminance and each light-emitting diode voltage signal is imported little processing by analog/digital converter circuit framework figure, a plurality of light-emitting diodes arranged side by side 21 can be arranged as matrix, in order to as display floater, and corresponding a plurality of light-emitting diode 21 is provided with a plurality of nodes 22, reads so that voltage to be provided.And corresponding a plurality of light-emitting diode 21 is provided with a plurality of loads 23, with the magnitude of current of control flows to light-emitting diode 21, and open and close light-emitting diode 21, its load 23 is the n channel metal oxide semiconductor field-effect transistor, and the drain electrode of n channel metal oxide semiconductor field-effect transistor is driven to open the drain electrode connected mode, the circuit of wherein adjusting light-emitting diode luminance has selftest function (Self Test Mode Function), can detect the voltage of each light-emitting diode 21 drain electrode ends in regular turn by a plurality of nodes, again by analog/digital converter (Analog/Digital Converter) 5, each analog signal conversion is become digital signal, be sent to microcontroller (Micro Controller Unit by serial interfaces (Serial Interface) 4, MCU) in 3, after microcontroller 3 has read the voltage value of each light-emitting diode drain electrode end, inquire about the voltage that component parameters produced that different manufacture processes provide the table of comparisons (as shown in Figure 5) to electric current, to obtain the corresponding current value of each light-emitting diode, the minimum value of power taking flow valuve again is as reference current value, and calculate proportionate relationship with the big current value of reference current value and other, for example: minimum current value is 100%, lowest high-current value is 80%, this moment just must be with lowest high-current value with negative sense compensation (be and reduce current value) 20%, and this led current values is adjusted to identical with the minimum value led current values, adjust generator (Pulse Width Modulation Generator) 7 with pulse duration again and receive the compensating current signal of microcontroller 3 this moment, and carry out the action of offset current.And the function of N position bolt-lock output port buffer 6 is the power output of control impuls width adjustment generator 6.
By the foregoing circuit framework, can obtain adjusting the method for light-emitting diode luminance, it includes the following step:
The first step, utilize analog/digital converter that the voltage signal of a plurality of nodes is done analog/digital conversion;
Second step, utilize microcontroller to read a plurality of node voltage values one by one, and the inquiry table of comparisons obtains the pairing current value of node voltage, and offset current and is sent compensating current signal to fiducial value one by one;
The 3rd goes on foot, utilizes the signal transmission interface of serial interfaces as analog/digital converter and microcontroller;
The 4th step, the signal that utilizes N bit shift buffer receiving sequence interface to be transmitted, and with signal allocation to this N position bolt-lock output port buffer;
The 5th goes on foot, utilizes pulse duration to adjust the compensating current signal that generator receives microcontroller, and carries out the action of offset current; And
The 6th the step, utilize N position bolt-lock output port buffer, in order to the power output of control impuls width adjustment generator, to finish the action of each light-emitting diode being carried out current compensation.
See also shown in Figure 8, for the present invention adjusts the serial interfaces of light-emitting diode luminance device and the transmission signals figure of microcontroller, it includes enable signal (CSB), read signal (RDB), write signal (WRB) and data-signal (DATA), and this enable signal, read signal and write signal for utilizing negative edge triggering signal activation, pass between its each transmission signals is that the cognizance code (ID) of selftest function (SelfTest Mode Function) is 001, after transmitting 6 (Bit) driving address (DriverAddress), it is one-period that this drain terminal voltage reads signal (RDB) pulse (Clock) with per nine, be converted into logical signal by analog/digital converter in regular turn, first pulse (Clock) is the processing signals (Driver Address) of analog/digital converter, and eight remaining pulses export analog/digital converter data (ADC DATA) to microprocessor by serial interfaces according to the order of d0～d7 field.
See also shown in Fig. 9 A, adjust the voltage data table of obtaining each light-emitting diode after the light-emitting diode luminance device is changed by analog/digital converter for the present invention, light-emitting diode displays the analog/digital conversion data of first light-emitting diode to a n light-emitting diode respectively in this tables of data, and should be recorded in respectively in the field of b0～b7 by the voltage data through changing, and these a plurality of voltage datas can be read by microcontroller.Please consult again shown in Fig. 9 B, the microcontroller of adjusting the light-emitting diode luminance device for the present invention according to Fig. 9 A data query table of comparisons to obtain I
DCurrent value and pulse duration are adjusted the ratio table of power, after wherein microcontroller reads voltage data as Fig. 9 A, inquire about Fig. 5 table of comparisons as described above again, to obtain the corresponding I of each light-emitting diode
DCurrent value, and get its minimum value as fiducial value, the light-emitting diode that fiducial value refers to get minimum current value is a benchmark, and will be higher than the current value of other a plurality of light-emitting diodes of this benchmark light-emitting diode, utilize pulse duration adjustment mode to be reduced, see also shown in Figure 11, for the present invention adjust the light-emitting diode luminance device get its minimum value as fiducial value to carry out the circuit framework figure that pulse duration is adjusted, for example: the I of the 3rd light-emitting diode 213
DCurrent value (20mA) is a minimum value, and it is 100% that its pulse duration is adjusted ratio; And the I of first light-emitting diode 211
DCurrent value (25mA) is a maximum, and it is 80% that its pulse duration is adjusted ratio, and therefore first light-emitting diode 211 and the 3rd light-emitting diode 213 have differed 20% ratio, is therefore reduced by the first light-emitting diode 211I in pulse duration adjustment mode
DCurrent value 20% can reach the current value (20mA) same with the 3rd light-emitting diode 213, and the rest may be inferred, and all light-emitting diodes all can be reduced to 20mA by the pulse duration adjustment.
See also shown in Figure 10, for the present invention adjusts the function square circuit diagram that the light-emitting diode luminance device utilizes pulse duration to adjust, wherein the compensating signal of microprocessor is by N bit shift buffer 8, the signal that is transmitted in order to the receiving sequence interface, and with signal allocation to a plurality of N position bolt-lock output port buffer 6, this a plurality of N position bolt-lock output port buffer 6, grid (G) by load 23 (N channel metal oxide semiconductor field effect transistor) again, carry out the power output of control impuls width adjustment generator, so that light-emitting diode 21 produces uniform brightness.
Extremely shown in Figure 11 by above-mentioned Fig. 1; can understand major technique of the present invention and be circuit at a plurality of light-emitting diode constituted; do current operator by detecting each node voltage; again with pulse duration adjustment (Pulse Width Modulation; PWM) method is carried out current compensation at each light-emitting diode; and make the luminous uniform state that presents of each light-emitting diode; has excellent effect for improving the display floater non-uniform light phenomenon that dot matrix LEDs constitutes, so propose patent application to seek protection of the patent right.
In sum, architectural feature of the present invention and each embodiment are open all in detail, and can fully demonstrate the present invention's all dark well-off progressive of executing in purpose and practicality, have the value of industry, and for not seen before on the market at present.
The above only is preferred embodiment of the present invention, can not with the scope implemented of restriction the present invention, i.e. various variations and the modification of doing according to claim of the present invention generally all should still belong in the scope that patent of the present invention contains.
Claims (12)
1. device of adjusting light-emitting diode luminance, it includes:
A plurality of light-emitting diodes arranged side by side;
A plurality of loads, corresponding a plurality of light-emitting diodes are set, with the magnitude of current of control flows to light-emitting diode, and the open and close light-emitting diode;
A plurality of nodes, corresponding a plurality of light-emitting diodes and a plurality of load are set, read so that voltage to be provided;
Analog/digital converter is done analog/digital conversion with the voltage signal of a plurality of nodes;
Microcontroller reads a plurality of node voltage values one by one, and the inquiry table of comparisons obtains the pairing current value of node voltage, and offset current and is sent compensating current signal to fiducial value one by one;
Serial interfaces is arranged between analog/digital converter and the microcontroller, as the signal transmission interface of the two;
Pulse duration is adjusted generator, receives the compensating current signal of microcontroller, and carries out the action of offset current; And
N position bolt-lock output port buffer is in order to the power output of control impuls width adjustment generator.
2. the device of adjustment light-emitting diode luminance as claimed in claim 1 wherein also includes N bit shift buffer, the signal that is transmitted in order to the receiving sequence interface, and with signal allocation to this N position bolt-lock output port buffer.
3. the device of adjustment light-emitting diode luminance as claimed in claim 1, wherein these a plurality of light-emitting diodes arranged side by side can be arranged as matrix, in order to as display floater.
4. the device of adjustment light-emitting diode luminance as claimed in claim 1, wherein these a plurality of loads are constituted by the n channel metal oxide semiconductor field-effect transistor.
5. the device of adjustment light-emitting diode luminance as claimed in claim 4, wherein the drain electrode of this n channel metal oxide semiconductor field-effect transistor is driven to open the drain electrode connected mode.
6. the device of adjustment light-emitting diode luminance as claimed in claim 1, wherein to refer to get the light-emitting diode of minimum current value be benchmark to the offset current of this microcontroller to fiducial value, and will be higher than the current value of other a plurality of light-emitting diodes of this benchmark light-emitting diode, utilize pulse duration adjustment mode to be reduced.
7. the device of adjustment light-emitting diode luminance as claimed in claim 1, the transmission signals of this serial interfaces and microcontroller wherein includes enable signal, reads signal, write signal and data-signal.
8. the device of adjustment light-emitting diode luminance as claimed in claim 7, wherein this enable signal, read signal and write signal for utilizing negative edge triggering signal activation.
9. the device of adjustment light-emitting diode luminance as claimed in claim 1, wherein the voltage that component parameters produced that provides for different manufacture processes of this table of comparisons is to the table of comparisons of electric current.
10. method of adjusting light-emitting diode luminance, it includes the following step:
The first step, utilize analog/digital converter that the voltage signal of a plurality of nodes is done analog/digital conversion;
Second step, utilize microcontroller to read a plurality of node voltage values one by one, and the inquiry table of comparisons obtains the pairing current value of node voltage, and offset current and is sent compensating current signal to fiducial value one by one;
The 3rd goes on foot, utilizes the signal transmission interface of serial interfaces as analog/digital converter and microcontroller;
The 4th goes on foot, utilizes pulse duration to adjust the compensating current signal that generator receives microcontroller, and carries out the action of offset current; And
The 5th the step, utilize N position bolt-lock output port buffer, in order to the power output of control impuls width adjustment generator, to finish the action of each light-emitting diode being carried out current compensation.
11. the method for adjustment light-emitting diode luminance as claimed in claim 10, wherein also include the signal that utilizes N bit shift buffer receiving sequence interface to be transmitted between three steps of this step the and the 4th step, and with the step of signal allocation to this N position bolt-lock output port buffer.
12. the method for adjustment light-emitting diode luminance as claimed in claim 10, wherein the voltage that component parameters produced that provides for different manufacture processes of this table of comparisons in this step the second step is to the table of comparisons of electric current.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100042635A CN100496172C (en) | 2006-02-13 | 2006-02-13 | Device and method for adjusting luminous diode brightness |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100042635A CN100496172C (en) | 2006-02-13 | 2006-02-13 | Device and method for adjusting luminous diode brightness |
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| CN101022687A true CN101022687A (en) | 2007-08-22 |
| CN100496172C CN100496172C (en) | 2009-06-03 |
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| CNB2006100042635A Expired - Fee Related CN100496172C (en) | 2006-02-13 | 2006-02-13 | Device and method for adjusting luminous diode brightness |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101600279A (en) * | 2009-07-20 | 2009-12-09 | 普照光电科技股份有限公司 | The drive circuit of light-emitting diode |
| CN102469645A (en) * | 2010-11-04 | 2012-05-23 | 恒耀电子股份有限公司 | Backlight module and control device for backlight module of light-emitting diode |
| CN101621869B (en) * | 2008-06-30 | 2013-06-05 | 联咏科技股份有限公司 | Light source device and light source adjusting module |
| CN103152900A (en) * | 2011-12-07 | 2013-06-12 | 立锜科技股份有限公司 | Dimming controller and method for controlling LED brightness |
| CN103281848A (en) * | 2013-06-20 | 2013-09-04 | 广州从兴电子开发有限公司 | Control method and control device of LED street lamp |
| CN107170406A (en) * | 2017-07-27 | 2017-09-15 | 芯颖科技有限公司 | Drive circuit and drive current control method |
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| CN101621869B (en) * | 2008-06-30 | 2013-06-05 | 联咏科技股份有限公司 | Light source device and light source adjusting module |
| CN101600279A (en) * | 2009-07-20 | 2009-12-09 | 普照光电科技股份有限公司 | The drive circuit of light-emitting diode |
| CN102469645B (en) * | 2010-11-04 | 2014-04-02 | 恒耀电子股份有限公司 | Backlight module and control device for backlight module of light-emitting diode |
| CN102469645A (en) * | 2010-11-04 | 2012-05-23 | 恒耀电子股份有限公司 | Backlight module and control device for backlight module of light-emitting diode |
| CN103152900A (en) * | 2011-12-07 | 2013-06-12 | 立锜科技股份有限公司 | Dimming controller and method for controlling LED brightness |
| CN103281848B (en) * | 2013-06-20 | 2016-06-08 | 南方电网综合能源有限公司 | A kind of control method of LED street lamp and device |
| CN103281848A (en) * | 2013-06-20 | 2013-09-04 | 广州从兴电子开发有限公司 | Control method and control device of LED street lamp |
| CN107170406A (en) * | 2017-07-27 | 2017-09-15 | 芯颖科技有限公司 | Drive circuit and drive current control method |
| CN107221286A (en) * | 2017-07-27 | 2017-09-29 | 芯颖科技有限公司 | Drive circuit, drive current control method and processor |
| CN110278634A (en) * | 2018-06-28 | 2019-09-24 | 成都芯源系统有限公司 | LED array driving system and LED driving unit |
| CN110278634B (en) * | 2018-06-28 | 2021-08-17 | 成都芯源系统有限公司 | LED array driving system and LED driving unit |
| CN111986630A (en) * | 2020-08-21 | 2020-11-24 | 维信诺科技股份有限公司 | Display brightness adjusting method and device and display device |
| CN114677955A (en) * | 2022-03-17 | 2022-06-28 | Tcl华星光电技术有限公司 | Display panel and control method thereof |
| CN114677955B (en) * | 2022-03-17 | 2023-09-26 | Tcl华星光电技术有限公司 | Display panel and control method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100496172C (en) | 2009-06-03 |
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