CN101017322A - Manufacture method of sidewall chromium attenuation type phase-shifting mask used in 193nm optical lithography - Google Patents
Manufacture method of sidewall chromium attenuation type phase-shifting mask used in 193nm optical lithography Download PDFInfo
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- CN101017322A CN101017322A CNA2006100030680A CN200610003068A CN101017322A CN 101017322 A CN101017322 A CN 101017322A CN A2006100030680 A CNA2006100030680 A CN A2006100030680A CN 200610003068 A CN200610003068 A CN 200610003068A CN 101017322 A CN101017322 A CN 101017322A
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- type phase
- attenuation type
- chromium
- sidewall
- shifting mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Abstract
This invention relates to one side wall chromic displacement mask mode process method for 193nm optical etching, which comprises the following steps: a, in the melt quartz underlay surface to deposit attuning displacement film; b, dropping electron beam etch glue in the attuning displacement film surface for electron beam and development; c, etching each abnormal displacement film; d, removing electron beam light etching; e, in the attuning displacement layer film surface to deposit absorptive chromic materials; f, absorbing materials for chromic with each simultaneous property; g, clearing; h, special sizes and relative position measurement; I, defiance testing and compensating; j, attuning displacement testing; k, fixing surface adhesive film to fulfill side wall chromic displacement mask film process.
Description
Technical field
The invention belongs to nanometer, deep-submicron manufacture field in the microelectric technique, particularly a kind of manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography.
Background technology
The kind of phase shift optical mask is a lot, and typical method comprises alternate type phase shift mask, chromium-less phase shift mask, attenuation type phase-shifting mask, edge enhancement mode and mixes five kinds of phase shift masks.The alternate type phase shift mask can improve the photoetching resolution of periodic feature figure greatly, but has problems when being used for the figure of irregular alignment and sandwich construction, eliminate phase conflicts and auxiliary mask re-expose problem; There is a phase control difficult problem in the chromium-less phase shift mask, and edge enhancement mode and mixing phase shift mask are applicable to any figure but same the existence makes difficulty and make precision problem.Attenuation type phase-shifting mask is made simple relatively, can improve the photoetching process tolerance greatly.
Summary of the invention
The manufacture method of sidewall chromium attenuation type phase-shifting mask that the purpose of this invention is to provide a kind of 193nm of being applied to optical lithography, it at first produces conventional attenuation type phase-shifting mask according to the method for making of conventional attenuation type phase-shifting mask, at large tracts of land deposit absorbent material chromium, last isotropic etching absorbent material chromium, only stay attenuation type phase shift layer material side wall chromium, thereby obtain being applied to the sidewall chromium attenuation type phase-shifting mask of 193nm optical lithography.Its feature is with respect to common attenuation type phase-shifting mask, in only many two steps of its manufacturing process, but can improve photoetching resolution by a relatively large margin.
Step of the present invention is as follows: 1, deposit attenuation type phase shift layer film on fused quartz lining primary surface; 2, on attenuation type phase shift layer film surface, get rid of electron beam resist, and carry out beamwriter lithography, development; 3, anisotropic etching attenuation type phase shift layer film; 4, remove electron beam resist; 5, large tracts of land deposit absorbent material chromium on attenuation type phase shift layer film surface; 6, isotropic etching absorbent material chromium; 7, clean; 8, characteristic dimension and relative positioning are measured; 9, defects detection and repairing; 10, the attenuation type phase shifter detects; 11, installation surface is pasted film, finishes the making of sidewall chromium attenuation type phase-shifting mask.
Wherein said sidewall chromium attenuation type phase-shifting mask obtains by once electron beam photoetching, anisotropic etching attenuation type phase shift layer film, large tracts of land deposit absorbent material chromium, anisotropic etching absorbent material chromium.The present invention can be used for the making of the sidewall chromium attenuation type phase-shifting mask of 193nm optical lithography.
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description, wherein:
Description of drawings
Fig. 1-1 is to Fig. 1-the 6th, process flow diagram of the present invention;
Fig. 2-1 is to Fig. 2-the 7th, the process flow diagram of the invention process example.
Embodiment
Used black (dark color) colour specification opaque section in the accompanying drawing, grey colour specification translucent portion.Meet the habitual method for expressing of microelectronics technology.
1, as Figure 1-1, deposit attenuation type phase shift layer film 102 on fused quartz substrate 101 surfaces, it is that thickness is the TiN/Si of 78nm that attenuation type phase shift layer film 102 materials are formed
3N
4The superlattice multilayer film, perhaps Ta (15nm)/TaSiO (125nm) multilayer film adopts the method for ion beam sputtering to obtain.
2, shown in Fig. 1-2, on attenuation type phase shift layer film 102 surfaces, get rid of electron beam resist ZEP7000, thickness is 300～400nm, goes forward to dry by the fire≤2 minutes at 120 ℃～160 ℃ hot plates, beamwriter lithography develops and obtains photoresist figure 103.
3, as Figure 1-3, do with photoresist figure 103 and to shelter, adopt chlorine-based gas anisotropic etching attenuation type phase shift layer film 102,, obtain attenuation type phase shift layer film figure 104.
4, shown in Fig. 1-4, adopt the method for acetone wet method or oxygen gas plasma to remove glue pattern 103 at quarter.
5, shown in Fig. 1-5, large tracts of land deposit absorbent material chromium 105 on attenuation type phase shift layer film figure 104 surfaces, absorbent material chromium 105 thickness are 10～90nm, are to adopt the method for electron beam evaporation to obtain.
6, shown in Fig. 1-6, need not anyly shelter, adopt chlorine-based gas anisotropic etching absorbent material chromium 105, only stay the chromium figure 106 of attenuation type phase shift layer film figure 104 sidewalls.
7, the sidewall chromium attenuation type phase-shifting mask version is placed in the acid liquid of NanostripTM 70 degrees centigrade and handled 15 minutes, positive and negative ultrasonic cleaning 5 minutes is cleaned in spraying 5 times in the circulation deionized water.
8, characteristic dimension and relative positioning are measured, 9 of random measurements or random measurement 21 points.
9, defects detection and repairing, the minimum defect size that requires critical size are less than 80nm, and the coordinate position of output defective adopts femtosecond laser technology or focused ion beam to carry out corresponding repairing according to this coordinate position.
10, the attenuation type phase shifter detects, 9 of random measurements or random measurement 21 points, transmitance mean deviation, permeability uniformity and the phase average deviation of detection attenuation type phase shift layer film require transmitance mean deviation ± 5%, permeability uniformity ± 4%, phase average deviation ± 3 °.
11, installation surface is pasted film, and thickness is 1 micron, and to 193nm light source transmitance 〉=99%, temperature is 23 ± 10 ℃, and wetness is 45%.
Examples of implementation
1, shown in Fig. 2-1, deposit attenuation type phase shift layer film 202 on fused quartz substrate 201 surfaces, it is that thickness is the TiN/Si of 78nm that attenuation type phase shift layer film 202 materials are formed
3N
4The superlattice multilayer film, perhaps Ta (15nm)/TaSiO (125nm) multilayer film adopts the method for ion beam sputtering to obtain.
2, shown in Fig. 2-2, on attenuation type phase shift layer film 202 surfaces, get rid of electron beam resist 203, electron beam resist 203 types are ZEP7000, thickness is 300～400nm, goes forward to dry by the fire≤2 minutes at 120 ℃～160 ℃ hot plates,
3, shown in Fig. 2-3, beamwriter lithography develops and obtains photoresist figure 204
4, shown in Fig. 2-4, do with photoresist figure 204 and to shelter, adopt chlorine-based gas anisotropic etching attenuation type phase shift layer film 202,, obtain attenuation type phase shift layer film figure 205.
5, shown in Fig. 2-5, adopt the method for acetone wet method or oxygen gas plasma to remove glue pattern 204 at quarter.
6, shown in Fig. 2-6, large tracts of land deposit absorbent material chromium 206 on attenuation type phase shift layer film figure 205 surfaces, absorbent material chromium 206 thickness are 10～90nm, are to adopt the method for electron beam evaporation to obtain.
7, shown in Fig. 2-7, need not anyly shelter, adopt chlorine-based gas anisotropic etching absorbent material chromium 206, only stay the chromium figure 207 of attenuation type phase shift layer film figure 205 sidewalls.
8, the sidewall chromium attenuation type phase-shifting mask version is placed in the acid liquid of NanostripTM 70 degrees centigrade and handled 15 minutes, positive and negative ultrasonic cleaning 5 minutes is cleaned in spraying 5 times in the circulation deionized water.
9, characteristic dimension and relative positioning are measured, 9 of random measurements or random measurement 21 points.
10, defects detection and repairing, the minimum defect size that requires critical size are less than 80nm, and the coordinate position of output defective adopts femtosecond laser technology or focused ion beam to carry out corresponding repairing according to this coordinate position.
11, the attenuation type phase shifter detects, 9 of random measurements or random measurement 21 points, transmitance mean deviation, permeability uniformity and the phase average deviation of detection attenuation type phase shift layer film require transmitance mean deviation ± 5%, permeability uniformity ± 4%, phase average deviation ± 3 °.
12, installation surface is pasted film, and thickness is 1 micron, and to 193nm light source transmitance 〉=99%, temperature is 23 ± 10 ℃, and wetness is 45%.
Claims (12)
1, a kind of manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography, at first produce conventional attenuation type phase-shifting mask according to the method for making of conventional attenuation type phase-shifting mask, at large tracts of land deposit absorbent material chromium, last isotropic etching absorbent material chromium, only stay attenuation type phase shift layer material side wall chromium, thereby obtain being used for the sidewall chromium attenuation type phase-shifting mask of 193nm optical lithography; It is characterized in that its step is as follows:
Step 1, on fused quartz lining primary surface deposit attenuation type phase shift layer film;
Step 2, on attenuation type phase shift layer film surface, get rid of electron beam resist, and carry out beamwriter lithography, development;
Step 3, anisotropic etching attenuation type phase shift layer film;
Step 4, removal electron beam resist;
Step 5, on attenuation type phase shift layer film surface large tracts of land deposit absorbent material chromium;
Step 6, isotropic etching absorbent material chromium;
Step 7, cleaning;
Step 8, characteristic dimension and relative positioning are measured;
Step 9, defects detection and repairing;
Step 10, attenuation type phase shifter detect;
Step 11, installation surface are pasted film, finish the making of sidewall chromium attenuation type phase-shifting mask.
2, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1 is characterized in that, wherein said on fused quartz lining primary surface deposit attenuation type phase shift layer film material to form be that thickness is the TiN/Si of 78nm
3N
4The superlattice multilayer film, perhaps Ta (15nm)/TaSiO (125nm) multilayer film adopts the method for ion beam sputtering to obtain.
3, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1, it is characterized in that, the wherein said electron beam resist that gets rid of on attenuation type phase shift layer film surface is ZEP7000, thickness is 300～400nm, goes forward to dry by the fire≤2 minutes at 120 ℃～160 ℃ hot plates.
4, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1 is characterized in that, wherein said anisotropic etching attenuation type phase shift layer film is to adopt chlorine-based gas.
5, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1 is characterized in that, wherein said removal electron beam resist is to adopt the method for acetone wet method or oxygen gas plasma to remove.
6, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1, it is characterized in that, wherein said on attenuation type phase shift layer film surface large tracts of land deposit absorbent material chromium thickness be 10～90nm, be to adopt the method for electron beam evaporation to obtain.
7, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1, it is characterized in that, wherein said isotropic etching absorbent material chromium need not anyly be sheltered, adopt the chlorine-based gas anisotropic etching, only stay the chromium of attenuation type phase shift layer film pattern side wall.
8, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1, it is characterized in that, wherein said cleaning is the sidewall chromium attenuation type phase-shifting mask version to be placed in the acid liquid of NanostripTM 70 degrees centigrade handled 15 minutes, positive and negative ultrasonic cleaning 5 minutes is cleaned in spraying 5 times in the circulation deionized water.
9, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1 is characterized in that, wherein said characteristic dimension and relative positioning are measured, 9 of random measurements or random measurement 21 points.
10, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1, it is characterized in that, wherein said defects detection requires the minimum defect size of critical size less than 80nm with repairing, the coordinate position of output defective adopts femtosecond laser technology or focused ion beam to carry out corresponding repairing according to this coordinate position.
11, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1, it is characterized in that, wherein said attenuation type phase shifter detects 9 of random measurements or random measurement 21 points, detect transmitance mean deviation, permeability uniformity and the phase average deviation of attenuation type phase shift layer film, require transmitance mean deviation ± 5%, permeability uniformity ± 4%, phase average deviation ± 3 °.
12, the manufacture method of sidewall chromium attenuation type phase-shifting mask that is used for the 193nm optical lithography according to claim 1, it is characterized in that it is 1 micron that wherein said installation surface is pasted film thickness, to 193nm light source transmitance 〉=99%, temperature is 23 ± 10 ℃, and wetness is 45%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100030680A CN101017322A (en) | 2006-02-08 | 2006-02-08 | Manufacture method of sidewall chromium attenuation type phase-shifting mask used in 193nm optical lithography |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100030680A CN101017322A (en) | 2006-02-08 | 2006-02-08 | Manufacture method of sidewall chromium attenuation type phase-shifting mask used in 193nm optical lithography |
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| CN101017322A true CN101017322A (en) | 2007-08-15 |
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| CNA2006100030680A Pending CN101017322A (en) | 2006-02-08 | 2006-02-08 | Manufacture method of sidewall chromium attenuation type phase-shifting mask used in 193nm optical lithography |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101770161A (en) * | 2009-12-31 | 2010-07-07 | 上海集成电路研发中心有限公司 | Method for manufacturing phase shift mask plate and structure thereof |
| WO2013082800A1 (en) * | 2011-12-09 | 2013-06-13 | 中国科学院微电子研究所 | Method for manufacturing chromium sidewall attenuation type phase-shifting mask used in euv lithography |
| CN103163726A (en) * | 2011-12-09 | 2013-06-19 | 中国科学院微电子研究所 | Method for manufacturing chromium sidewall attenuation type phase-shifting mask used in extreme ultra-violet lithography |
| CN103612014A (en) * | 2013-11-30 | 2014-03-05 | 东莞誉铭新工业有限公司 | Laser etching technology for mobile phone battery cover |
| CN109799674A (en) * | 2017-11-17 | 2019-05-24 | Imec 非营利协会 | Mask and its manufacturing method for pole UV photoetching |
-
2006
- 2006-02-08 CN CNA2006100030680A patent/CN101017322A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101770161A (en) * | 2009-12-31 | 2010-07-07 | 上海集成电路研发中心有限公司 | Method for manufacturing phase shift mask plate and structure thereof |
| CN101770161B (en) * | 2009-12-31 | 2015-01-07 | 上海集成电路研发中心有限公司 | Method for manufacturing phase shift mask plate and structure thereof |
| WO2013082800A1 (en) * | 2011-12-09 | 2013-06-13 | 中国科学院微电子研究所 | Method for manufacturing chromium sidewall attenuation type phase-shifting mask used in euv lithography |
| CN103163726A (en) * | 2011-12-09 | 2013-06-19 | 中国科学院微电子研究所 | Method for manufacturing chromium sidewall attenuation type phase-shifting mask used in extreme ultra-violet lithography |
| CN103612014A (en) * | 2013-11-30 | 2014-03-05 | 东莞誉铭新工业有限公司 | Laser etching technology for mobile phone battery cover |
| CN103612014B (en) * | 2013-11-30 | 2016-01-13 | 东莞市誉铭新精密技术股份有限公司 | A kind of radium carver skill of mobile phone battery cover |
| CN109799674A (en) * | 2017-11-17 | 2019-05-24 | Imec 非营利协会 | Mask and its manufacturing method for pole UV photoetching |
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