CN101013726A - New material of carbon/silicon heterojunction with gas pressure sensitive effect and application thereof - Google Patents
New material of carbon/silicon heterojunction with gas pressure sensitive effect and application thereof Download PDFInfo
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- CN101013726A CN101013726A CN 200710013464 CN200710013464A CN101013726A CN 101013726 A CN101013726 A CN 101013726A CN 200710013464 CN200710013464 CN 200710013464 CN 200710013464 A CN200710013464 A CN 200710013464A CN 101013726 A CN101013726 A CN 101013726A
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Abstract
The invention provides one carbon and silicon abnormal new materials with gas pressure sensitive effect, which forms one layer of film with thickness as 20nm-200nm by splashing the iron and graphite compound target onto polished silicon base slice with 0 to 10 percent or 99.9 percent graphite, wherein, the new materials have apparent gas sensitive effect changing with resistance to process gas pressure sensor without extra capacitor.
Description
Technical field:
The present invention relates to field of sensing technologies, particularly a kind of doped carbon film/silicon heterogenous new material that air pressure is had sensitlzing effect, it specifically belongs to a kind of carbon/silicon heterojunction new material with air pressure sensitlzing effect for preparing with the method for magnetron sputtering on (100) silicon chip of polishing.The significant change of the resistance of this heterojunction material with the variation of air pressure.
Background technology:
Baroceptor is one of important directions of sensing technology application, has a wide range of applications at many productions, sphere of life.(or preparation) a kind of air pressure sensitive material is normally selected in the design of baroceptor earlier, then around this air pressure sensitive material design pressure sensing capacitor.The macromolecular material or the metallic film material of deformation more easily takes place in selected air pressure sensitive material.Deformation takes place with the external pressure variation in these materials, thereby changes the distance between the capacitor two-plate, and then changes the electric capacity of capacitor, plays pneumatically-sensed effect.In recent years, the development of baroceptor is mainly reflected on pneumatics box transducer, silicon pressure sensor and the micromechanics electronic system transducer three class transducers.The shortcoming of pneumatics box class transducer is that volume is bigger, is difficult to realize the microminiaturized integrated of transducer.The volume of the silicon pressure sensor on the ordinary meaning is less relatively, precision is high, but the preparation technology of its expensive price, complexity has limited its large-scale production and application.
Summary of the invention:
The purpose of this invention is to provide a kind of new material for preparing the air pressure sensor.
The object of the present invention is achieved like this, on (100) silicon chip of the thick polishing of 0.5～1.0mm,, make the carbon/silicon heterojunction new material with the method sputter one deck carbon film or the doping carbon film of magnetron sputtering, this film is a diamond like carbon film, and thickness is 20～200nm.Carbon/silicon heterojunction new material of the present invention has significant air pressure sensitivity characteristic, is exactly under different air pressure, and its resistance value has tangible difference, and promptly this material has special resistance-air pressure characteristic, thereby can be used to make new baroceptor.
Preparation method with doping film/Si heterojunction material of obvious air pressure sensitlzing effect of the present invention passes through following steps:
(1) getting purity is 99.9% graphite powder, perhaps adds certain iron powder in purity is 99.9% graphite powder, by the method for colding pressing, makes the graphite composite target of iron content 0～10% (mass fraction).
(2) be that 20% the required thickness of hydrofluoric acid solution immersion test is the silicon chip 5 minutes of 0.5～1.0mm earlier, in ultrasonic wave, respectively cleaned silicon chip 5 minutes with deionized water, acetone, ethanol successively then with molar concentration.
(3) cleaned silicon chip is put into sputtering chamber, open pumped vacuum systems and vacuumize.
(4) when the background vacuum be 2 * 10
-4During handkerchief, feed argon gas, and keep the pressure of 2 handkerchiefs, after treating stable gas pressure, begin to use the graphite target sputter, perhaps with the graphite Film by Sputtering of Composite Target of mixing iron, sputtering power is 50 watts of (sputter direct voltages: 0.50KV, the sputter direct current: 0.10A), sputtering time is 5 to 50 minutes, and sputter temperature is a room temperature to 400 ℃.
(5) after sputter finishes, stop logical argon gas, pumped vacuum systems works on, and makes sample natural cooling under the higher environment of vacuum degree, treats that sample temperature reduces to room temperature, takes out sample.
(6) the carbon film/Si heterojunction material for preparing like this, perhaps the film thickness of iron doping carbon film/Si heterojunction material is 20～200nm, has tangible air pressure sensitlzing effect, promptly the resistance value of material changes with air pressure change.
Because carbon/silicon heterojunction new material provided by the present invention has tangible air pressure sensitlzing effect, make baroceptor with it and need not the additional designs capacitor, can directly reflect the variation of air pressure by the resistance variations of this material, it is little to have a volume, is easy to characteristics such as integrated.
Description of drawings:
Fig. 1 is the structural representation according to the baroceptor of carbon/silicon heterojunction new material manufacturing provided by the present invention.
Fig. 2 is the baroceptor of making according to carbon/silicon heterojunction new material provided by the present invention, under different bias voltages, heterojunction resistance and air pressure change concern schematic diagram.
Embodiment:
Describe the present invention in detail below in conjunction with drawings and Examples.
Compare with prior art, have with the baroceptor that carbon involved in the present invention/silicon heterogenous new material prepares Following advantage: 1. need not the additional designs capacitor, can directly reflect the variation of air pressure by the resistance variations of this material; 2. measurement category is big, and has higher precision; 3. need not the pressure conduction device, volume is little, can be prepared into cube Grade; 4. with silicon chip as substrate, be easy to integrated; 5. material is high temperature resistant, corrosion-resistant, character stable; 6. make It is simple to make technology, the yield rate height, and cost is low.
Claims (3)
1. the carbon/silicon heterojunction new material with air pressure sensitlzing effect is characterized in that, on the thick polished silicon substrate of 0.5～1.0mm, sputter one deck diamond-like carbon film, the thickness of film are 20～200nm.
2. according to the described carbon/silicon heterojunction new material of claim 1, it is characterized in that, can contain mass content in the said diamond-like carbon film and be 0～10% iron, make doping carbon film/silicon heterogenous new material with air pressure sensitlzing effect.
3. according to claim 1 or 2 described carbon/silicon heterojunction new materials, it is characterized in that this material has tangible air pressure sensitlzing effect, can be used for preparing baroceptor with air pressure sensitlzing effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710013464A CN101013726B (en) | 2007-02-02 | 2007-02-02 | New material of carbon/silicon heterojunction with gas pressure sensitive effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710013464A CN101013726B (en) | 2007-02-02 | 2007-02-02 | New material of carbon/silicon heterojunction with gas pressure sensitive effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101013726A true CN101013726A (en) | 2007-08-08 |
| CN101013726B CN101013726B (en) | 2010-05-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710013464A Expired - Fee Related CN101013726B (en) | 2007-02-02 | 2007-02-02 | New material of carbon/silicon heterojunction with gas pressure sensitive effect |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048362A (en) * | 2013-01-18 | 2013-04-17 | 中国石油大学(华东) | Hydrogen-sensitive palladium/carbon/silicon dioxide/silicon heterostructure material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330952C (en) * | 2003-11-14 | 2007-08-08 | 中国科学院电子学研究所 | Polymerized material baroceptor chip |
| DE102004004177B4 (en) * | 2004-01-28 | 2006-03-02 | AxynTeC Dünnschichttechnik GmbH | Process for producing thin layers and its use |
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2007
- 2007-02-02 CN CN200710013464A patent/CN101013726B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103048362A (en) * | 2013-01-18 | 2013-04-17 | 中国石油大学(华东) | Hydrogen-sensitive palladium/carbon/silicon dioxide/silicon heterostructure material |
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| Publication number | Publication date |
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| CN101013726B (en) | 2010-05-19 |
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