CN101013719A - Luminescence device, manufacturing method thereof, exposure device and electric device - Google Patents

Abstract

The present invention provides an illuminating device can not only prevent crossfire but also prevent uneven brightness and manufacturing method thereof, and exposal device and electronic device. The invention is an illuminating device, a substrate (10) comprise pixel electrode (111); cathode (12) opposite to the pixel electrode; cavity injection layer (110a) and illuminating layer (110b) laminating from the substrate side between the pixel electrode and the cathode, an insulation layer (112a) having lyophobicity relative to forming material of the cavity injection layer in terms of dividing pixel electrode and superposition when looking down with edge portion of the pixel electrode, between neighbor electrodes, cavity injection layer (110a) is arranged on the pixel electrode divided by the insulation layer (112a), the height of the upper surface of the cavity injection layer is approximate the same as that of upper surface of insulation layer arranged on edge portion of the insulation layer (112a).

Description

The manufacture method of light-emitting device, light-emitting device, exposure device and electronic equipment

Technical field

The present invention relates to manufacture method, exposure device and the electronic equipment of light-emitting device, light-emitting device.

Background technology

The organic El device that utilizes electroluminescence is owing to self-luminous has visuognosis height, light and thin, feature such as resistance to impact is superior, so extensively receive publicity in recent years.

This organic El device constitutes: on the transparency carriers such as glass substrate that formed as the thin-film transistor of switch element, stacked above one another is by ITO, tin oxide (SnO ₂) anode that waits transparent conductive material to constitute; The hole injection layer that constitutes by the adulterate body of polythiofuran derivative; The luminescent layer that constitutes by luminescent substances such as poly-fluorenes; And have the metal material of low work function or the negative electrode that metallic compound constitutes by Ca etc.

When adopting the low material that divides subsystem as the material of these organic films, generally be based on the film forming of vapour deposition method.But, in vapour deposition method, be difficult to large tracts of land film forming equably.And, need the vacuum plant of great number, and the material service efficiency is extremely low, therefore be difficult to realize cost degradation.

Therefore, extensively adopted as the material of organic film and used macromolecular material, formed the method for organic film by liquid phase methods such as spin-coating method, infusion process, ink-jet methods.Below, the method that forms organic film (hole injection layer and luminescent layer) by (1) spin-coating method, (2) ink-jet method is described.

(1) spin-coating method

When forming hole injection layer and luminescent layer, at first after having formed a plurality of pixel electrodes on the substrate, form by SiO in order to distinguish each of pixel electrode by spin-coating method ₂Inorganic cofferdam layer Deng the material formation.Then, comprise on the whole pixel electrode of inorganic cofferdam layer form hole injection layer by spin-coating method after, stacked luminescent layer on this hole injection layer (with reference to patent documentation 1,2).

(2) ink-jet method

When forming hole injection layer and luminescent layer, at first form by SiO in order to distinguish pixel electrode by ink-jet method ₂, TiO ₂Inorganic matter cofferdam layer etc. the inorganic material formation.Then, on this inorganic matter cofferdam layer, form the organic substance cofferdam layer of acrylic resin, polyimide resin formation.Afterwards, the side wall surface of inorganic matter cofferdam layer and the electrode surface of pixel electrode are implemented the lyophily processing, the internal face and the upper surface of organic substance cofferdam layer are implemented the lyophoby processing.

In the zone that the inorganic matter cofferdam layer and the organic substance cofferdam layer of formation are like this distinguished, form hole injection layer, stacked luminescent layer on this hole injection layer (with reference to patent documentation 2～5).

Yet, have following problem when forming hole injection layer and luminescent layer by above-mentioned (1) spin-coating method, (2) ink-jet method.

(1) under the situation of spin-coating method, the material of hole injection layer has adopted the such low material of resistance of PEDOT/PSS (the Baytron P of H.CStrack corporate system).Here, as mentioned above, because hole injection layer is formed on the whole base plate, so the hole of hole injection layer also can flow to the hole injection layer of the light-emitting zone pixel in addition that is distinguished by inorganic cofferdam layer between adjacent, so-called crosstalking (cross talk) taken place.Thus, the hole injection layer on the inorganic cofferdam layer between pixel is adjacent similarly plays a role with electrode sometimes, and is luminous in the zone beyond the light-emitting zone, exists the problem that qualities such as can causing luminous shape soft edge reduces.

And when forming hole injection layer etc. on whole base plate by spin-coating method, existing needs installation portion or negative electrode to take out the problem of removing operation of peeling off in the zone.

(2) under the situation of ink-jet method, consider the precision of photoetching treatment, the organic substance cofferdam layer separates interval to a certain degree and is formed on the inorganic matter cofferdam layer from the periphery of inorganic matter cofferdam layer.Therefore, the laminated portions of inorganic matter cofferdam layer and organic substance cofferdam layer becomes jump.This inorganic matter cofferdam layer is lyophily.Therefore, if form material, then become and also can be configured hole injection layer on the inorganic matter cofferdam layer of this jump and form material to the zone ejection hole injection layer that is distinguished by inorganic matter cofferdam layer and organic substance cofferdam layer.And, can on this hole injection layer, form luminescent layer.At this moment, be formed on the hole injection layer that becomes on the inorganic matter of this jump cofferdam layer and the thickness of luminescent layer, different with the thickness of hole injection layer that is formed on each pixel region and luminescent layer, exist the different problem of luminosity in the zone that is fenced up by the cofferdam.

In addition,, carry out dried, form luminescent layer by making the solvent evaporation in the luminescent material behind ejection luminescent material on the hole injection layer.But the point that drying began of luminescent material (pinning point, pinning point) is not identical position in the side wall surface of organic substance cofferdam layer at every turn, and the tendency of the position deviation of dry beginning is arranged.Because the deviation of the pinning point of the side wall surface of this organic substance cofferdam layer, thickness is different sometimes in the middle body and the marginal portion of luminescent layer, can't form the luminescent layer of uniform film thickness.Thus, the middle body that exists in pixel region is different with the marginal portion luminosity, and different problem of light life-span.

[patent documentation 1] spy opens the 2003-45665 communique

[patent documentation 2] spy opens the 2001-18441 communique

[patent documentation 3] spy opens the 2003-19826 communique

No. 3328297 communique of [patent documentation 4] patent

[patent documentation 5] spy opens the 2003-282244 communique

Summary of the invention

The present invention proposes in view of the above problems, its purpose is to provide manufacture method, exposure device and the electronic equipment of a kind of light-emitting device, light-emitting device, can prevent to crosstalk and can be evenly and be formed flatly the thickness of the functional layer of each pixel, realize the homogenizing of luminosity and luminescent lifetime.

The present invention provides a kind of light-emitting device in order to solve above-mentioned problem, and it possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, between adjacent described pixel electrode, to divide described pixel electrode and to overlook the mode that overlaps down with the marginal portion of described pixel electrode, setting has the insulating barrier of lyophobicity with respect to the hole injection layer material, on the described pixel electrode of being divided by described insulating barrier described hole injection layer is set, the height of the upper surface of described hole injection layer is roughly the same with the height of the upper surface that is arranged on the described insulating barrier on the marginal portion of described insulating barrier.

Constitute according to this, because the insulating barrier that is arranged on the pixel electrode marginal portion has lyophobicity with respect to the hole injection layer material, so the hole injection layer formation material that is sprayed onto on the insulating barrier can be flicked, inflow is insulated in layer peristome of dividing.And the height of the height of the upper surface of hole injection layer and the upper surface of insulating barrier is roughly the same, may be controlled to hole injection layer formation material after the drying and can not drain on the insulating barrier.This can realize by the ejection conditions such as spray volume of control hole injection layer formation material.Therefore, hole injection layer only is configured on the pixel electrode that is insulated in layer peristome of dividing, and can not be configured on the insulating barrier in the peristome outside (between the adjacent pixels).

Therefore, the hole that can suppress to be arranged on the hole injection layer of each pixel electrode flow between neighbor, i.e. the what is called generation of crosstalking.Thus, can prevent to reduce owing to electric current infiltrates the display qualities such as luminous shape soft edge that produce between neighbor.

And light-emitting device of the present invention preferably is provided with described luminescent layer on described insulating barrier and described hole injection layer whole.

Constitute according to this, because the upper surface of insulating barrier and the upper surface of hole injection layer are roughly the same height, so the upper surface of the upper surface of insulating barrier and hole injection layer becomes continuous tabular surface.Therefore, the luminescent layer that is formed on insulating barrier and the hole injection layer becomes uniform film thickness and smooth film, can obtain not having the uniformly light-emitting of brightness disproportionation.

The invention provides a kind of manufacture method of light-emitting device, wherein light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, this manufacture method has: insulating barrier forms operation, between adjacent described pixel electrode, have lyophobicity or be implemented the insulating barrier that lyophoby is handled to divide described pixel electrode and to overlook the mode that overlaps down, to form with respect to the hole injection layer material with the marginal portion of described pixel electrode; Hole injection layer forms operation, and on the described pixel electrode of being divided by described insulating barrier, the roughly the same mode of height according to the upper surface of the height of the upper surface of described hole injection layer and described insulating barrier forms described hole injection layer; Form operation with luminescent layer, on described insulating barrier and described pixel electrode whole, form luminescent layer.

And, preferably form in the operation at described insulating barrier, after the material of use silicon nitride comprising and carbon forms described insulating barrier, in the atmosphere of fluorine based compound gas, described insulating barrier is implemented plasma treatment.

And, preferably form in the operation, by silica (SiO at described insulating barrier ₂), silicon nitride (SiN) or titanium oxide (TiO ₂) form described insulating barrier after, it is that coupling is handled that described surface of insulating layer is implemented silane.

According to this method,,, flow in the peristome that is insulated layer division so the hole injection layer formation material that is sprayed onto on the insulating barrier can be flicked because the insulating barrier that is arranged on the pixel electrode marginal portion has lyophobicity with respect to the hole injection layer material.And the upper surface of hole injection layer and the upper surface of insulating barrier form highly roughly the same, so hole injection layer formation material can not drain on the insulating barrier.This can realize by the ejection conditions such as spray volume of control hole injection layer formation material.Therefore, hole injection layer can not overflow from the peristome that is insulated layer division, thereby can not be configured on the insulating barrier in the peristome outside.

Therefore, the hole that can suppress to be arranged on the hole injection layer of each pixel electrode flow between neighbor, i.e. the what is called generation of crosstalking.Thus, can prevent to reduce owing to electric current infiltrates the display qualities such as luminous shape soft edge that produce between neighbor.

And the manufacture method of light-emitting device of the present invention preferably forms in the operation at described hole injection layer, forms described hole injection layer by drop ejection method, forms in the operation at described luminescent layer, forms described luminescent layer by liquid phase method.

In the present invention, because insulating barrier has lyophobicity or has been implemented the lyophoby processing, even so under the situation that has adopted drop ejection method, hole injection layer forms the outside that material can not escape to the peristome that is insulated layer division yet, can form hole injection layer selectively.Therefore,, can suppress the waste of material according to drop ejection method, thus can be low-cost and form hole injection layer accurately.

And, according to the present invention, owing to become continuous tabular surface on insulating barrier and the hole injection layer, so can form luminescent layer by easy spin-coating method.Thus, can easily form uniform film thickness and smooth luminescent layer.

In addition, exposure device of the present invention is characterised in that the photoconductor drum that possesses above-mentioned light-emitting device and can rotate is exposed to described photoconductor drum by the light that penetrates from described light-emitting device.

And electronic equipment of the present invention is characterised in that to possess above-mentioned light-emitting device.

Constitute according to this, owing to possess above-mentioned light-emitting device, so high-quality exposure device and the electronic equipment that does not have brightness disproportionation can be provided.

The present invention provides a kind of light-emitting device in order to solve above-mentioned problem, and it possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, this light-emitting device possesses: between adjacent described pixel electrode, with first next door that has lyophobicity with respect to described hole injection layer of dividing described pixel electrode and overlooking with the marginal portion of described pixel electrode that the mode that overlaps down is provided with; With second next door that is arranged in the mode of dividing described pixel electrode on described first next door, the described pixel electrode of being divided by described first next door is provided with described hole injection layer, and the height of the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode is roughly the same.

And the preferred described luminescent layer of light-emitting device of the present invention is arranged on described first next door and described hole injection layer whole.

Constitute according to this,,, flow in the peristome of being divided by first next door so the hole injection layer formation material that is sprayed onto on first next door can be flicked because first next door that is arranged on the pixel electrode marginal portion has lyophobicity with respect to hole injection layer.And the height of the upper surface in the height of the upper surface of hole injection layer and first next door is roughly the same, may be controlled to hole injection layer formation material and can not drain on first next door.This can realize by the ejection conditions such as spray volume of control hole injection layer formation material.Therefore, hole injection layer can not be configured to the outside from the peristome of being divided by first next door.Like this, because the upper level of the upper surface in first next door and hole injection layer is roughly the same, so can form even and smooth hole injection layer and luminescent layer.And then, owing to can make uniform film thickness,, can realize the homogenization of luminescent lifetime so there is not the luminescent lifetime inequality at the marginal portion and the middle body of hole injection layer and luminescent layer.

The invention provides a kind of manufacture method of light-emitting device, wherein light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, this manufacture method has: first next door forms operation, between adjacent described pixel electrode, to divide described pixel electrode and to overlook the mode that overlaps down, first next door that formation has lyophobicity with respect to the hole injection layer material with the marginal portion of described pixel electrode; Second next door forms operation, forms second next door in the mode of dividing described pixel electrode on described first next door; Hole injection layer forms operation, on by the described pixel electrode of described first next door and the division of described second next door, the roughly the same mode of height according to the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode forms described hole injection layer; Form operation with luminescent layer, on whole of the described hole injection layer of being divided by described first next door and described second next door, form luminescent layer.

And, the manufacture method of light-emitting device, after preferably the material of use silicon nitride comprising and carbon forms first next door in described first next door formation operation, in the atmosphere of fluorine based compound gas, plasma treatment is carried out in described first next door, come that lyophoby is implemented in described first next door and handle.

And, the manufacture method of light-emitting device, preferably described first next door form in the operation form described first next door by silica, silicon nitride or titanium oxide after, implementing silane after described second next door forms operation is that coupling is handled, and lyophoby is implemented on surface, described first next door handled.

And then the manufacture method of light-emitting device after preferred described second next door forms, is carried out plasma treatment in the atmosphere of fluorine based compound gas, lyophoby is implemented in described second next door handled.

According to this method,,, flow in the peristome of being divided by first next door so the hole injection layer formation material that is sprayed onto on first next door can be flicked because first next door that is arranged on the pixel electrode marginal portion has lyophobicity with respect to the hole injection layer material.And the height of the upper surface in the height of the upper surface of hole injection layer and first next door is roughly the same, may be controlled to hole injection layer formation material and can not drain on first next door.This can realize by the ejection conditions such as spray volume of control hole injection layer formation material.Therefore, hole injection layer can not be configured to the outside from the peristome of being divided by first next door.Like this, because the upper level of the upper surface in first next door and hole injection layer is roughly the same, so can form even and smooth hole injection layer and luminescent layer.And then, owing to can make uniform film thickness,, can realize the homogenization of luminescent lifetime so there is not the luminescent lifetime inequality at the marginal portion and the middle body of hole injection layer and luminescent layer.

And the manufacture method of light-emitting device of the present invention preferably forms in the operation at described hole injection layer and forms described hole injection layer by drop ejection method, forms in the operation at described luminescent layer and forms described luminescent layer by drop ejection method.

According to the present invention, can spray method by drop and form hole injection layer and luminescent layer selectively.Therefore, can suppress the waste of material, thus can be low-cost and form hole injection layer and luminescent layer accurately.

The present invention provides a kind of light-emitting device in order to solve above-mentioned problem, and it possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, this light-emitting device possesses: between adjacent described pixel electrode, to divide described pixel electrode and to overlook first next door that the following mode that overlaps is provided with the marginal portion of described pixel electrode; With second next door that is arranged in the mode of dividing described pixel electrode on described first next door, on the side in described second next door, be provided with first area and the lyophobicity second area lower than described first area with lyophobicity.

Constitute according to this, the lyophobicity of the second area of side, second next door is lower than the first area, and it is also easy to be wetting than the first area that the luminescent layer that is sprayed forms material.Therefore, this second area becomes luminescent layer and forms the pinning point (pinning point) that material begins drying, separates out.Therefore, the pinning point that (fixing) beginning is dry, separate out can be controlled in the position of the second area by regulating second next door.Thus, form the spray volume of material etc. by the control luminescent layer, can control dried thickness, thereby can form more even and smooth luminescent layer.

Here, the pinning phenomenon is described.

Generally be configured in drop (edge) dry the comparing soon on the substrate in the marginal portion.Therefore, comprise at drop under the situation of solvent, in the dry run of this drop, the concentration of solute etc. at first reaches capacity in the marginal portion of drop, begins to separate out.On the other hand, because the liquid that supply loses because of evaporation in drop edge part, so produce from drop middle body mobile to the liquid of marginal portion in that drop is inner.As a result, the solvent of drop middle body flows along with this and is transported to the marginal portion, follows the drying of drop, promotes separating out from the marginal portion.Like this, drop is contained solvent is along the periphery of the shape that is configured in the drop on the substrate and the phenomenon of separating out is called " pinning ".

In the present invention, with in the drop (luminescent layer formation material) that is ejected in the zone of being divided by second next door, the part of the contacts side surfaces in the outer rim of the drop that begins to separate out and second next door is called " pinning point ".

And, light-emitting device of the present invention is preferred: described second next door begins to constitute according to the sequential cascade of first organic matter layer, insulating barrier and second organic matter layer from described substrate-side, and the lyophobicity of described surface of insulating layer is surperficial lower than described first organic matter layer and described second organic matter layer.

According to this formation, for example by having adopted the plasma treatment of fluorine based compound, can easily make surface of insulating layer form following state: lyophobicity is surperficial lower than first organic matter layer and second organic matter layer, and it is more wetting easily than the surface of first organic matter layer etc. that the luminescent layer that sprayed forms material.For this reason, the surface of this insulating barrier becomes pinning point.Therefore, can control the dry position of (fixing) beginning, thereby can control dried thickness.Thus, can pass through the spray volume of control luminescent layer formation material etc., control becomes the thickness of target, can form smooth luminescent layer.

And, light-emitting device of the present invention, it possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, this light-emitting device possesses: between adjacent described pixel electrode, to divide described pixel electrode and to overlook first next door that the following mode that overlaps is provided with the marginal portion of described pixel electrode; With second next door that is arranged in the mode of dividing described pixel electrode on described first next door, at least a portion of the side in described second next door is provided with bend.

And, preferred described second next door by last wall part and have than described side of going up wall part laterally the following wall part of outstanding side constitute, the upper surface of described outstanding following wall part and described on the intersection of side of wall part described bend is set.

Constitute according to this, the bend that is arranged on side, described second next door becomes luminescent layer and forms the pinning point that material begins drying, separates out.The luminescent layer formation material that is ejected in the zone of being divided by second next door is that basic point begins drying with this bend.Therefore, by regulating the position of bend, can control the dry pinning point of beginning.In addition, be can not become pinning point under plane or the crooked situation in second next door.

And, preferred described first next door of light-emitting device of the present invention has lyophobicity with respect to the hole injection layer material, and the height of the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode is roughly the same.

Constitute according to this,,, flow in the zone of being divided by first next door so the hole injection layer formation material that is sprayed onto on first next door can be flicked because first next door that is arranged on the pixel electrode marginal portion has lyophobicity with respect to the hole injection layer material.And the height of the upper surface in the height of the upper surface of hole injection layer and first next door is roughly the same, may be controlled to hole injection layer formation material and can not drain on first next door.This can realize by the ejection conditions such as spray volume of control hole injection layer formation material.Therefore, hole injection layer only is configured on the regional interior pixel electrode of being divided by first next door, can not be configured on first next door.Thus, can form even and smooth hole injection layer.And, owing to can on this hole injection layer, form luminescent layer, so can form even and smooth luminescent layer.And then, owing to can make the uniform film thickness of hole injection layer and luminescent layer in marginal portion and middle body, so can prevent brightness disproportionation.

The invention provides a kind of manufacture method of light-emitting device, wherein light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, this manufacture method has: first next door forms operation, between adjacent described pixel electrode, to divide described pixel electrode and to form first next door overlooking the mode that overlaps down with the marginal portion of described pixel electrode; Second next door forms operation, forms second next door in the mode of dividing described pixel electrode on described first next door; Hole injection layer forms operation, forms described hole injection layer on by the described pixel electrode of described first next door and the division of described second next door; Form operation with luminescent layer, on by the described hole injection layer of described first next door and the division of described second next door, form described luminescent layer, form in the operation in described second next door, successively first organic matter layer, insulating barrier and second organic matter layer are laminated on described first next door from described substrate-side, are patterned as the regulation shape and form described second next door.

And, preferably after forming described second next door,, give hydrophily to described surface of insulating layer by the plasma treatment of oxygen and fluorine based compound gas, give lyophobicity to described first organic matter layer and described second organic matter layer.

According to this method, owing to be provided with the insulating barrier with lyophily between first organic matter layer and second organic matter layer, so the luminescent layer that is sprayed formation material is wetting easily, this surface of insulating layer becomes pinning point.The luminescent layer formation material that is ejected in the zone of being divided by second next door is that basic point begins drying, separates out with this pinning point.Therefore, by regulating the formation position of insulating barrier, can control the position of the dry pinning point of (fixing) beginning.Thus, form the spray volume of material etc. by the control luminescent layer, can control dried thickness, thereby can form more even and smooth luminescent layer.

And, the invention provides a kind of manufacture method of light-emitting device, wherein light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side, it is characterized in that, this manufacture method has: first next door forms operation, between adjacent described pixel electrode, to divide described pixel electrode and to form first next door overlooking the mode that overlaps down with the marginal portion of described pixel electrode; Second next door forms operation, forms second next door in the mode of dividing described pixel electrode on described first next door; Hole injection layer forms operation, forms described hole injection layer on by the described pixel electrode of described first next door and the division of described second next door; Form operation with luminescent layer, on the described hole injection layer of being divided by described first next door and described second next door, form luminescent layer, form in the operation, at least a portion of the side in described second next door, form bend in described second next door.

And, preferably form described second next door by organic substance after,, give lyophobicity to described organic matter layer by the plasma treatment of oxygen and fluorine based compound gas.

According to this method, owing to form bend in the side in second next door, so this bend becomes pinning point.The luminescent layer formation material that is ejected in the zone of being divided by second next door is that basic point begins drying, separates out with this bend.Therefore, the position of the bend of the side by regulating second next door can control that beginning is dry, the position of the pinning point of separating out.Thus, form the spray volume of material etc. by the control luminescent layer, can control dried thickness, thereby can form more even and smooth luminescent layer.

And then, the manufacture method of light-emitting device of the present invention, preferably form in the operation in described first next door, use the material of silicon nitride comprising and carbon to form described first next door, form in the operation in described second next door, after having formed described second next door, utilize fluorine based compound gas that plasma treatment is implemented in described first next door, give lyophobicity to described first next door, form in the operation at described hole injection layer, on the described pixel electrode of being divided by described first next door, form described hole injection layer according to the roughly the same mode of height of the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode.

In addition, the manufacture method of light-emitting device of the present invention, preferably form in the operation in described first next door, form described first next door by silica or titanium oxide, form in the operation in described second next door, after forming described second next door and carrying out plasma treatment, it is that coupling is handled that silane is implemented in described first next door, give lyophobicity to described first next door, form in the operation at described hole injection layer, on the described pixel electrode of being divided by described first next door, the roughly the same mode of height according to the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode forms described hole injection layer.

And the manufacture method of light-emitting device of the present invention preferably forms in the operation at described hole injection layer and forms described hole injection layer by drop ejection method, forms in the operation at described luminescent layer and forms described luminescent layer by drop ejection method.

According to the present invention, can spray method by drop and form hole injection layer and luminescent layer selectively.Therefore, can suppress the waste of material, thus can be low-cost and form hole injection layer and luminescent layer accurately.

Description of drawings

Fig. 1 is the equivalent circuit diagram of organic El device.

Fig. 2 (a) is the vertical view that the summary of expression organic El device constitutes, and (b) is the cutaway view along the A-B line of the organic El device of (a).

Fig. 3 is the cutaway view of the major part of organic El device.

Fig. 4 is the cutaway view of manufacturing process of the organic El device of expression first execution mode.

Fig. 5 is the cutaway view of manufacturing process of the organic El device of expression first execution mode.

Fig. 6 is the cutaway view of manufacturing process of the organic El device of expression first execution mode.

Fig. 7 is the cutaway view of manufacturing process of the organic El device of expression first execution mode.

Fig. 8 is the cutaway view of manufacturing process of the organic El device of expression second execution mode.

Fig. 9 is the cutaway view of manufacturing process of the organic El device of expression second execution mode.

Figure 10 is the cutaway view of manufacturing process of the organic El device of expression second execution mode.

Figure 11 is the stereogram that the summary of expression exposure device constitutes.

Figure 12 (a) is the vertical view that the summary of the organic El device of expression the 3rd execution mode constitutes, and (b) is the cutaway view along the A-B line of the organic El device of (a).

Figure 13 is the cutaway view of the major part of organic El device.

Figure 14 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

Figure 15 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

Figure 16 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

Figure 17 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

Figure 18 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

Figure 19 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

Figure 20 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

Figure 21 is the cutaway view of manufacturing process of the organic El device of expression the 4th execution mode.

Figure 22 is the cutaway view of manufacturing process of the organic El device of expression the 4th execution mode.

Figure 23 (a) is the vertical view that the summary of the organic El device of expression the 5th execution mode constitutes, and (b) is the cutaway view along the A-B line of the organic El device of (a).

Figure 24 is the cutaway view of the major part of organic El device.

Figure 25 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 26 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 27 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 28 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 29 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 30 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 31 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 32 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

Figure 33 is the cutaway view of manufacturing process of the organic El device of expression the 6th execution mode.

Figure 34 is the cutaway view of manufacturing process of the organic El device of expression the 7th execution mode.

Figure 35 is the cutaway view of manufacturing process of the organic El device of expression the 7th execution mode.

Figure 36 is the stereogram that the summary of expression mobile phone constitutes.

1,201,301-organic El device (light-emitting device) among the figure:, the 10-substrate, the 12-negative electrode, the 110b-luminescent layer, the 110a-hole injection layer, the 111-pixel electrode, 18,112a-inorganic matter cofferdam layer (first next door), 112c-pixel openings portion, 18c-pixel openings portion, 220,320-organic substance cofferdam layer (second next door), 322-first organic matter layer, 324-oxide skin(coating), 326-second organic matter layer, cofferdam layer under the 332-(following wall part), the last cofferdam layer of 334-(going up wall part), 340-bend.

Embodiment

(the 1st execution mode)

Followingly embodiments of the present invention are described with reference to accompanying drawing.

In addition, in each following figure, because each layer or each parts are made as the size of the degree that can discern on figure, so that each layer or each parts show as reduce in scale is different with actual object.

And the organic El device of present embodiment adopts the monochrome of sending solid color to show, is the bottom emission mode of taking out the light that is sent by luminescent layer 110b from substrate-side.

(organic El device)

Fig. 1 represents the equivalent circuit diagram as the wire structures of the organic El device of light-emitting device of present embodiment, and Fig. 2 (a) is the vertical view that the summary of expression organic El device constitutes, and (b) is the cutaway view of the organic El device of (a) along the A-B line.

As shown in Figure 1, the organic El device 1 (light-emitting device) of present embodiment has following circuit and constitutes, and this circuit has connected up respectively: multi-strip scanning line 101; Many signal line 102 along the direction extension that intersects with scan line 101; With many power lines 103 that extend side by side with holding wire 102; And, near each intersection point of scan line 101 and holding wire 102, be provided with pixel region A.

Connecting on the holding wire 102 possess shift register, the data side drive circuit 104 of level shifter, video line and analog switch etc.And, connecting the scan-side drive circuit 105 that possesses shift register and level shifter etc. on the scan line 101.And then, be provided with among each pixel region A: the switch thin-film transistor 112 that sweep signal is provided to gate electrode via scan line 101; Maintenance via this switch with thin-film transistor 112 and from the maintenance electric capacity (cap) of the total picture element signal of holding wire 102; The driving that gate electrode has been supplied to the picture element signal that this maintenance electric capacity (cap) kept is with thin-film transistor 123; When being electrically connected with thin-film transistor 123 and with power line 103, be provided the pixel electrode 111 of drive current from this power line 103 via this driving; And be clamped in functional layer 110 between this pixel electrode 111 and the negative electrode (opposite electrode) 12.Electrode 111, negative electrode 12 by the front have constituted light-emitting component with functional layer 110, for example organic EL.

According to this formation, if scan line 101 is driven, make switch with thin-film transistor 112 conductings, then the current potential of Ci Shi holding wire 102 is held electric capacity cap maintenance, keep the state of electric capacity cap according to this, decision drives the conduction and cut-off state with thin-film transistor 123.And via the raceway groove that drives with thin-film transistor 123, electric current flows to pixel electrode 111 from power line 103, and then via functional layer 110, current direction negative electrode 12.Functional layer 110 is according to flowing through wherein the magnitude of current and luminous.

Shown in Fig. 2 (a) and (b), the organic El device 1 of present embodiment possesses: the transparency carrier 10 that is made of glass etc., possess the light-emitting component portion 11 that is configured to rectangular light-emitting component on substrate 10.In addition, light-emitting component is made of anode, functional layer, negative electrode, and the called function layer is meant hole injection layer, luminescent layer, electronics injection/transfer layer etc.Substrate 10 for example is the transparency carrier of glass etc., is divided into the viewing area 2a that is positioned at substrate 10 central authorities and is positioned at substrate 10 edges and is in the non-display area 2b in the viewing area 2a outside.Viewing area 2a is by being configured to the zone that rectangular light-emitting component forms, being also referred to as effective viewing area.And, be formed with non-display area 2b in the outside of viewing area.And, be formed with illusory viewing area 2d with viewing area 2a adjacency at non-display area 2b.In addition, shown in Fig. 2 (b), possess circuit element portion 14 between light-emitting component portion 11 and the substrate 10, this circuit element portion 14 comprises above-mentioned scan line, holding wire, maintenance electric capacity, switch thin-film transistor, drives and use thin-film transistor 123 etc.And then, an end of negative electrode 12 be formed at substrate 10 on negative electrode with the wiring 12a be connected, an end 12b of this wiring is connected with the wiring 5a on the flexible substrate 5.And the drive IC 6 (drive circuit) that is possessed on wiring 5a and the flexible substrate 5 is connected.

In addition, shown in Fig. 2 (a) and Fig. 2 (b), dispose above-mentioned power line 103 (103R, 103G, 103B) among the non-display area 2b of circuit element portion 14.And the both sides of the viewing area 2a that Fig. 2 (a) is put down in writing dispose above-mentioned scan-side drive circuit 105,105.This scan-side drive circuit 105,105 is set in the circuit element portion 14 of illusory viewing area 2d downside.And then, be provided with the drive circuit that is connected with scan-side drive circuit 105,105 in the circuit element portion 14 with control signal wiring 105a and drive circuit power-supply wiring 105b.And the upside of the viewing area 2a that Fig. 2 (a) is put down in writing (in the drawings, upside is the opposition side of drive IC 6) disposes check circuit 106.Can be undertaken in the manufacture process or the quality, the inspection of defective of organic El device when dispatching from the factory by this check circuit 106.

In addition, shown in Fig. 2 (b), light-emitting component portion 11 based on be layered in a plurality of pixel electrode 111... on each functional layer 110 and the plane domain between each pixel electrode 111 and the functional layer 110 is possessed and inorganic matter cofferdam layer 112a that each functional layer 110 plane is divided and constituting.On functional layer 110, dispose negative electrode 12.Constitute light-emitting component (for example organic EL) by these pixel electrodes 111, functional layer 110 and negative electrode 12.Here, pixel electrode 111 is for example formed by ITO, pattern form overlook roughly rectangular.The thickness of this pixel electrode 111 for example is preferably the scope of 50～200nm, especially is good about 150nm.Possesses inorganic matter cofferdam layer 112a (insulating barrier) between the adjacent pixel electrodes 111....

And, shown in Fig. 2 (b), in light-emitting component portion 11, possess sealing 3.Sealing portion 3 constitutes by being coated on sealing resin 3a, the hermetic sealing substrate 3b that is disposed on the sealing resin 3a that heat reactive resin on the negative electrode 12 or ultraviolet curable resin etc. form.In addition, as sealing resin 3a, can not produce the material of gas, solvent etc. during preferred consolidation.Sealing portion 3 forms covered cathode 12 at least, and the intrusion of anti-sealing or oxygen target 12 and luminescent layer 110b prevents the oxidation of negative electrode 12 and luminescent layer 110b thus.In addition, hermetic sealing substrate 3b engages with sealing resin 3a, protection sealing resin 3a, preferably any one of glass plate, metallic plate or resin plate.And as described later, the preferred jar seal type that adopts also can carry out the absorption of oxygen by gettering material at the part configuration gettering material of depression, and oxidation takes place in the inside that is sealed to prevent.

Fig. 3 is the figure after the light-emitting component in the organic El device is amplified, and the figure of the cross-section structure of viewing area has been amplified in special expression.Illustrate three pixel region A among this Fig. 3.

This organic El device 1 by substrate 10, circuit element portion 14 and light-emitting component portion 11 with circuit such as TFT of being formed on this substrate etc. constitute, this light-emitting component portion 11 has: further be formed at the pixel electrode (anode) 111 on this circuit element portion 14, the functional layer 110 that comprises hole injection layer 110a and luminescent layer 110b and negative electrode 12.Pixel electrodes 111, hole injection layer 110a, luminescent layer 110b and negative electrode 12 constitute organic EL.In this organic El device 1, the light transmission circuit element portion 14 and the substrate 10 that send to substrate 10 sides from functional layer 110, shine the downside (observer's side) of substrate 10, and reflected by negative electrode 12 to the light that the opposition side of substrate 10 sends from functional layer 110, see through circuit element portion 14 and substrate 10, shine the downside (observer's side) of substrate 10.

As shown in Figure 3, inorganic matter cofferdam layer 112a controls light-emitting zone, is formed between the pixel electrode 111,111, so that divide pixel electrode 111.And the part of inorganic matter cofferdam layer 112a is crossed on the edge part of pixel electrode 111 and is formed, and inorganic matter cofferdam layer 112a and pixel electrode 111 overlap overlooking last branch.Thus, pixel electrode 111 is provided with the 112c of pixel openings portion that is divided by inorganic matter cofferdam layer 112a, and the area of the 112c of this pixel openings portion is an aperture opening ratio.

Here, inorganic matter cofferdam layer 112a is formed by the material that has mixed trace carbon (C) among the SiN.Implemented oxygen plasma treatment and the continuous processing of having adopted the plasma treatment of fluorocarbon gas on this inorganic matter cofferdam layer 112a surface, perhaps adopted the plasma treatment of above-mentioned mist, inorganic matter cofferdam layer 112a surface is lyophobicity.

And, also can adopt for example SiO ₂, SiN, TiO ₂Form inorganic matter cofferdam layer 112a etc. inorganic material.At this moment, being formed with by silane such as trimethoxy silanes on inorganic matter cofferdam layer 112a surface is the monofilm that coupling agent constitutes, and inorganic matter cofferdam layer 112a surface is lyophobicity.Thus, inorganic matter cofferdam layer 112a forms material with respect to hole injection layer described later and has lyophobicity, and forms material with respect to luminescent layer, compares with hole injection layer formation material to have lyophily.

The thickness of this inorganic matter cofferdam layer 112a preferably with the thickness same degree of the hole injection layer 110a that becomes target.For example, be preferably the scope of 30～200nm, especially 50nm～100nm is good.If thickness is thin excessively, then can't guarantee insulating properties, if the blocked up free from flaw ground that then is difficult to forms insulating barrier.And, if thickness surpasses 200nm, then can't guarantee to be layered in the flatness of the aftermentioned luminescent layer 110b on the hole injection layer 110a, therefore not preferred.

As shown in Figure 3, functional layer 110 has: be formed at the hole injection layer 110a on the pixel electrode 111; With the luminescent layer 110b that is layered on the hole injection layer 110a.

Hole injection layer 110a is formed at by on the pixel electrode 111 in the 112c of pixel openings portion of inorganic matter cofferdam layer 112a division.In the present embodiment, the surface of inorganic matter cofferdam layer 112a is lyophobicity.Therefore, when forming hole injection layer 110a, be directed onto on the inorganic matter cofferdam layer 112a, also can be flicked and flow in the 112c of pixel openings portion, can not escape to the outside of the 112c of pixel openings portion even hole injection layer forms material by liquid phase method.And by adjusting ejection condition such as spray volume, hole injection layer 110a can form: the height of the upper surface of the inorganic matter cofferdam layer 112a that forms is roughly the same with crossing on pixel electrode 111 for the height of the upper surface of hole injection layer 110a.Here, the height of the upper surface of hole injection layer 110a and inorganic matter cofferdam layer 112a, for example the surface apart from pixel electrode 111 is 50nm.Thus, form continuous plane at the upper surface of inorganic matter cofferdam layer 112a and the upper surface of hole injection layer 110a.

In addition, form material, for example preferred mixture that adopts poly-Ethylenedioxy Thiophene polythiofuran derivatives such as (PEDOT) and polystyrolsulfon acid etc. as hole injection layer.

As shown in Figure 3, luminescent layer 110b is formed on inorganic matter cofferdam layer 112a and hole injection layer 110a whole.Polymeric luminescence layer as this luminescent layer 110b forms material, the preferred macromolecule organic material that adopts poly-fluorene derivative (PF), poly (p phenylene vinylene) derivatives (PPV), poly radical derivative (PPP), polyvinylcarbazole (PVK), polythiofuran derivative, polymethyl-benzene base silane polysilanes such as (PMPS) system etc.As the thickness of luminescent layer 110b, preference is as 50～80nm.

As shown in Figure 3, negative electrode 12 on whole of luminescent layer 110b with pixel electrode 111 opposed formation.This negative electrode 12 is to begin to constitute with the order stacked above one another of aluminium (Al) layer according to calcium (Ca) layer from substrate 10 sides.Aluminium lamination will reflex to substrate 10 sides (observer's side) from the light that luminescent layer 110b sends, and except aluminium lamination, also preferably be made of the stacked film of Ag layer or Al layer and Ag layer etc.In addition, for the material that makes luminescent layer 110b can be luminous efficiently, also between the Ca layer of luminescent layer 110b and negative electrode 12, form lithium fluoride (LiF) layer sometimes.As the thickness of Ca layer, for example the thickness of preferred 2～20nm especially is good about 10nm.And, as the thickness of Al layer, for example be preferably the scope of 100～1000nm, 200nm left and right sides You Jia.And, also can on the Al layer, be provided with by SiO, SiO ₂, composition such as SiN the protective layer used of anti-oxidation.

(manufacture method of organic El device)

Then, mainly the manufacture method of the organic El device of first execution mode is described with reference to Fig. 4～Fig. 7.

Wherein, because the manufacturing process of TFT etc. has been adopted known method, so omit its explanation.

(cofferdam layer formation operation)

At first, the material that the material that adopts material trace to siliceous (Si), nitrogen (N) to mix carbon containing (C) forms becomes the insulating barrier of inorganic matter cofferdam layer on whole of the second interlayer dielectric 144b that comprises pixel electrode 111 by the CVD method.Then, behind coating photonasty resist on the whole insulating barrier, use the position corresponding, the photonasty resist is carried out photoetching treatment, the photonasty resist is patterned as the regulation shape by the mask of opening with the above-mentioned pixel openings 112c of portion on the pixel electrode 111.Then, the photonasty resist behind this patterning as mask, is carried out etch processes to insulating barrier.As shown in Figure 4,, in circuit element portion 14, form pixel electrode 111 is divided, and a part is crossed over the inorganic matter cofferdam layer 112a on the marginal portion of pixel electrode 111 by this processing.And the thickness of inorganic matter cofferdam layer 112a is preferably the scope of 30～200nm, and 50nm is good especially.Then, by oxygen gas plasma handle, with tetrafluoromethane as the plasma treatment (CF that handles gas ₄Plasma treatment), lyophoby being implemented on inorganic matter cofferdam layer 112a surface handles.In addition, also can utilize the processing gas that in the atmosphere of fluorine based compound gas, has mixed oxygen, carry out plasma treatment.Thus, can adjust the lyophobicity on inorganic matter cofferdam layer 112a surface.

(hole injection layer formation operation)

Then, as shown in Figure 5, the hole injection layer that will add the diethylene glycol equal solvent in the aqueous dispersions of the mixture that contains PEDOT/PSS (PEDOT: PSS=1: 6 or 1: 20) forms material 109a, is ejected in the 112c of pixel openings portion that is divided by inorganic matter cofferdam layer 112a by ink discharge device IJ.

Here, inorganic matter cofferdam layer 112a surface has been implemented the lyophoby processing, and inorganic matter cofferdam layer 112a surface is about 80 degree with the contact angle that hole injection layer forms material 109a.Therefore, even the hole injection layer to the 112c of pixel openings portion of inorganic matter cofferdam layer 112a ejection forms the upper surface that material 109a is directed onto inorganic matter cofferdam layer 112a, hole injection layer forms material 109a and also can be flicked and flow in the 112c of pixel openings portion.

And, in the present embodiment, can control from the hole injection layer of ink discharge device IJ ejection and form the spray volume of material 109a and the hole injection layer that sprayed forms the solid component concentration of contained PEDOT/PSS the solvent of material 109a etc.Thus, can will be formed on the height of the inorganic matter cofferdam layer 112a upper surface on the marginal portion of pixel electrode 111, and the hole injection layer that is sprayed be formed the height that material carries out dried hole injection layer 110a upper surface and form identical.

(drying process)

Then, as shown in Figure 6, make the hole injection layer of ejection form the contained solvent evaporation of material, form hole injection layer 110a on the pixel electrode 111 in the 112c of pixel openings portion that is divided by inorganic matter cofferdam layer 112a by dried.Specifically, after the hole injection layer of ejection formed material and carry out vacuumize, in atmospheric pressure with 200 ℃ temperature drying 10 minutes.By this dried, as shown in Figure 6, can form the hole injection layer 110a of the upper surface equal height of the inorganic matter cofferdam layer 112a that has and on the marginal portion of pixel electrode 111, form.In addition, because inorganic matter cofferdam layer 112a surface has been implemented the lyophoby processing,, formed continuous tabular surface at the upper surface of inorganic matter cofferdam layer 112a and the upper surface of hole injection layer 110a so can't form hole injection layer 110a on the inorganic matter cofferdam layer 112a.

(luminescent layer formation operation)

Next, form material by spin-coating method film forming luminescent layer on inorganic matter cofferdam layer 112a and hole injection layer 110a whole.Form material as luminescent layer, can adopt the mixture of poly-fluorene derivative (PF), poly (p phenylene vinylene) derivatives (PPV), polyvinylcarbazole, CBP and Ir (ppy) 3 (iridium complex compounds) etc., also can use as coating solution making these luminescent layers form the solution of material dissolves in dimethylbenzene or toluene.

Here, inorganic matter cofferdam layer 112a surface has lyophobicity, but contain aromatic series based materials such as dimethylbenzene in the coating solution owing to the formation luminescent layer, so luminescent layer forms the application of liquid of material and compares with hole injection layer formation material 109a, improves with respect to inorganic matter cofferdam layer 112a wettability of the surface.Particularly, hole injection layer 110a surface is about 30 degree with the contact angle that luminescent layer forms the coating liquid of material.And inorganic matter cofferdam layer 112a surface is about 40 degree with the contact angle that luminescent layer forms the coating liquid of material.Therefore, the upper surface of the upper surface of hole injection layer 110a and inorganic matter cofferdam layer 112a, the contact angle of coating liquid that forms material with luminescent layer is roughly the same.

Therefore, as shown in Figure 7, on inorganic matter cofferdam layer 112a and hole injection layer 110a whole, form luminescent layer 110b by spin-coating method.Specifically, after spin-coating film, the temperature with 130 ℃ in inert atmosphere was implemented annealing in process 60 minutes.Thus, can form thickness and for example be the even and smooth luminescent layer 110b of 80nm.

Coating process as forming luminescent layer except spin-coating method, also can adopt methods such as dip coating method, spraying process, knife coating.

(negative electrode formation operation)

Then, as shown in Figure 7,, form the negative electrode 12 that constitutes by these stacked films by heating in vacuum vapour deposition method stacked above one another Ca layer and Al layer on whole of luminescent layer 110b.In addition, as mentioned above, also can form the LiF layer in the lower floor of Ca layer.And, for anti-oxidation, preferably on negative electrode 12, form SiO ₂, protective layer such as SiN.

At last, turn back to Fig. 2 (b), the sealing resin 3a that coating is made of heat reactive resin or ultraviolet curable resin on whole of negative electrode 12, stacked hermetic sealing substrate 3b on sealing resin 3a and form sealing 3.Sealing process preferably carries out in inert atmospheres such as nitrogen, argon, helium.

By this method, can make the organic El device 1 of first execution mode.

In addition, omit hole transporting layer in the above-described embodiment, but also can between hole injection layer 110a and luminescent layer 110b, form hole transporting layer.As the material of hole transporting layer, can adopt the triphenylamine based polymer.Thus, luminescent layer 110b can be effectively the hole be injected into, therefore efficient, outstanding characteristic of life-span can be obtained.

According to present embodiment, owing to the inorganic matter cofferdam layer 112a on the edge part that is arranged on pixel electrode 111 has lyophobicity with respect to hole injection layer 110a, so the hole injection layer 110a formation material that is sprayed onto on the inorganic matter cofferdam layer 112a can be flicked, and flow in the 112c of pixel openings portion that is divided by inorganic matter cofferdam layer 112a.And the height of the height of hole injection layer 110a upper surface and inorganic matter cofferdam layer 112a upper surface is roughly the same, may be controlled to hole injection layer 110a formation material and can not drain on the inorganic matter cofferdam layer 112a.Therefore, hole injection layer 110a only is formed on by on the pixel electrode 111 in the 112c of pixel openings portion of inorganic matter cofferdam layer 112a division, can not be configured on the inorganic matter cofferdam layer 112a in the 112c of the pixel openings portion outside (between adjacent pixels).

Therefore, can suppress hole because of the hole injection layer 110a that is arranged on each pixel electrode 111 and flow into the generation that the what is called that causes between the neighbor is crosstalked.Thus, can prevent that electric current is penetrated between the neighbor and the decline of the display qualities such as luminous shape soft edge that cause.

And, according to present embodiment, because the upper surface of inorganic matter cofferdam layer 112a and the upper surface of hole injection layer 110a are roughly the same height, so the upper surface of the upper surface of inorganic matter cofferdam layer 112a and hole injection layer 110a becomes continuous tabular surface.Therefore, the luminescent layer 110b that forms on inorganic matter cofferdam layer 112a and hole injection layer 110a becomes uniform film thickness and smooth film, thus, can obtain not having the uniformly light-emitting of brightness disproportionation.

And, according to present embodiment, because inorganic matter cofferdam layer 112a surface has lyophobicity, even so under the situation that has adopted ink discharge device, the formation material of hole injection layer 110a is not drained to by the outside of the 112c of pixel openings portion of inorganic matter cofferdam layer 112a division, can optionally form hole injection layer 110a.Therefore,, can suppress the waste of material by adopting ink discharge device, thus can be low-cost and form hole injection layer 110a accurately.

In addition, according to present embodiment, because the upper surface of inorganic matter cofferdam layer 112a and hole injection layer 110a is continuous tabular surface, so can form luminescent layer 110b by easy spin-coating method.Thus, can easily form uniform film thickness and smooth luminescent layer 110b.

(second execution mode)

Then, with reference to Fig. 8～Figure 10 second execution mode of the present invention is described.

Present embodiment is different on the method for inorganic matter cofferdam layer 112a being implemented the lyophoby processing with above-mentioned first execution mode.In addition, the basic comprising of other organic El device and manufacture method are identical with above-mentioned first execution mode, give identical mark to common inscape, and detailed.

As shown in Figure 8, on whole of the inorganic matter cofferdam layer 112a that comprises pixel electrode 111, be coupling agent 114a by silane such as vapor phase method or infusion process formation trimethoxy silanes.At this moment, be the functional group of coupling agent end by selecting silane, can control the wetability on inorganic matter cofferdam layer 112a top layer.

Then, as shown in Figure 9, the plane domain corresponding with the above-mentioned pixel openings 112c of portion is arranged on the inorganic matter cofferdam layer 112a by the mask of opening.Then, via this mask 60, be coupling agent 114a irradiation ultraviolet radiation to the silane that is formed on the inorganic matter cofferdam layer 112a that comprises pixel electrode 111.

Based on this irradiation, ultraviolet ray arrival silane by mask 60 is on the coupling agent 114a, as shown in figure 10, having removed the silane that is formed on the 112c of pixel openings portion, has specifically removed the side that is formed on pixel electrode 111 upper surfaces and inorganic matter cofferdam layer 112a is coupling agent.Then, forming by silane on inorganic matter cofferdam layer 112a upper surface is the monofilm 114 that coupling agent constitutes.Like this, given lyophobicity to inorganic matter cofferdam layer 112a surface.On the other hand, on the pixel electrode 111 in the 112c of pixel openings portion and the side of inorganic matter cofferdam layer 112a is a coupling agent owing to be removed silane, so compare with the upper surface of the inorganic matter cofferdam layer 112a that is formed with monofilm 114, becomes the surface of lyophily.

(exposure device)

Then, the exposure device that possesses illustrated in the above-described embodiment organic El device 1 (photohead) is described.In addition, photohead has adopted organic EL to be arranged as staggered structure.

Figure 11 is the stereogram that the summary of expression exposure device 100 constitutes.

As shown in figure 11, exposure device comprises: photohead 62, make lens arra 31 from the photoimaging of this photohead 62, be through the photoconductor drum 9 from the light exposure of photohead 62 of lens arra 31.

According to this exposure device 100, owing to possess above-mentioned organic El device as photohead 62, so, the high-quality exposure device 100 that does not have brightness disproportionation can be provided.

(the 3rd execution mode)

Followingly embodiments of the present invention are described with reference to accompanying drawing.

In addition, in Figure 12～Figure 22, because each layer or each parts are made as the size of the degree that can discern on figure, so that each layer or each parts show as reduce in scale is different with actual object.

And the organic El device of present embodiment is the bottom emission mode of taking out the light that is sent by luminescent layer from substrate-side.

(organic El device)

Figure 12 (a) is the vertical view that the summary of the organic El device of expression present embodiment constitutes, and Figure 12 (b) is the cutaway view of the organic El device of (a) along the A-B line.

As shown in Figure 1, the organic El device 201 (light-emitting device) of present embodiment has following circuit and constitutes, and this circuit has connected up respectively: multi-strip scanning line 101; Many signal line 102 along the direction extension that intersects with scan line 101; With many power lines 103 that extend side by side with holding wire 102.Near each intersection point of scan line 101 and holding wire 102, be provided with pixel region A.

Connecting on the holding wire 102 possess shift register, the data side drive circuit 104 of level shifter, video line and analog switch etc.And, connecting the scan-side drive circuit 105 that possesses shift register and level shifter etc. on the scan line 101.And, be provided with among each pixel region A: the switch thin-film transistor 112 that sweep signal is provided to gate electrode via scan line 101; Maintenance via this switch with thin-film transistor 112 and from the maintenance electric capacity (cap) of the total picture element signal of holding wire 102; The driving that gate electrode has been supplied to the picture element signal that this maintenance electric capacity (cap) kept is with thin-film transistor 123; When being electrically connected with power line 103 with thin-film transistor 123, be provided the pixel electrode 111 of drive current from this power line 103 via this driving; And be clamped in functional layer 110 between this pixel electrode 111 and the negative electrode (opposite electrode) 12.Electrode 111, negative electrode 12 by the front constitute light-emitting component with functional layer 110, for example organic EL.

According to this formation, if scan line 101 is driven, make switch with thin-film transistor 112 conductings, then the current potential of Ci Shi holding wire 102 is held electric capacity cap maintenance, keep the state of electric capacity cap according to this, decision drives the conduction and cut-off state with thin-film transistor 123.And via the raceway groove that drives with thin-film transistor 123, electric current flows to pixel electrode 111 from power line 103, and then via functional layer 110, current direction negative electrode 12.Functional layer 110 is according to flowing through wherein the magnitude of current and luminous.

Shown in Figure 12 (a) and (b), the organic El device 201 of present embodiment possesses: the transparency carrier 10 that is made of glass etc., possess the light-emitting component portion 11 that is configured to rectangular light-emitting component on substrate 10.In addition, light-emitting component is made of anode, functional layer, negative electrode, and the called function layer is meant hole injection layer, luminescent layer, electronics injection/transfer layer etc.Substrate 10 for example is transparency carriers such as glass, is divided into the viewing area 2a that is positioned at substrate 10 central authorities and is positioned at the edge of substrate 10 and is in the non-display area 2b in the viewing area 2a outside.Viewing area 2a is by being configured to the zone that rectangular light-emitting component forms, being also referred to as effective viewing area.And, be formed with non-display area 2b in the outside of viewing area.And, be formed with illusory viewing area 2d with viewing area 2a adjacency at non-display area 2b.In addition, shown in Figure 12 (b), possess circuit element portion 14 between light-emitting component portion 11 and the substrate 10, this circuit element portion 14 comprises above-mentioned scan line, holding wire, maintenance electric capacity, switch thin-film transistor, drives and use thin-film transistor 123 etc.And, an end of negative electrode 12 be formed at substrate 10 on negative electrode with the wiring 12a be connected, an end 12b of this wiring is connected with the wiring 5a on the flexible substrate 5.And the drive IC 6 (drive circuit) that is possessed on wiring 5a and the flexible substrate 5 is connected.

In addition, shown in Figure 12 (a) and Figure 12 (b), dispose above-mentioned power line 103 (103R, 103G, 103B) among the non-display area 2b of circuit element portion 14.And the both sides of the viewing area 2a that Figure 12 (a) is put down in writing dispose above-mentioned scan-side drive circuit 105,105.This scan-side drive circuit 105,105 is set in the circuit element portion 14 of illusory viewing area 2d downside.And, be provided with the drive circuit that is connected with scan-side drive circuit 105,105 in the circuit element portion 14 with control signal wiring 105a and drive circuit power-supply wiring 105b.In addition, the upside (in the drawings, upside is the opposition side of drive IC 6) of the viewing area 2a that is put down in writing at Figure 12 (a) disposes check circuit 106.Can be undertaken in the manufacture process or the quality, the inspection of defective of organic El device when dispatching from the factory by this check circuit 106.

And, shown in Figure 12 (b), light-emitting component portion 11 based on be layered in a plurality of pixel electrode 111... on each functional layer 110 and the plane domain between each pixel electrode 111 and the functional layer 110 is possessed and inorganic matter cofferdam layer 18 (first next door) that each functional layer 110 plane is divided and constituting.On functional layer 110, dispose negative electrode 12.Constitute light-emitting component (for example organic EL) by these pixel electrodes 111, functional layer 110 and negative electrode 12.Here, pixel electrode 111 is for example formed by ITO, by pattern form overlook roughly rectangular.The thickness of this pixel electrode 111 for example is preferably the scope of 50～200nm, 150nm left and right sides You Jia.Possesses inorganic matter cofferdam layer 18 (first next door) between the adjacent pixel electrodes 111....

And, shown in Figure 12 (b), in light-emitting component portion 11, possess sealing 3.Sealing portion 3 constitutes by being coated on sealing resin 3a that heat reactive resin on the negative electrode 12 or ultraviolet curable resin etc. form and the hermetic sealing substrate 3b that is disposed on the sealing resin 3a.In addition, as sealing resin 3a, can not produce the material of gas, solvent etc. during preferred consolidation.Sealing portion 3 forms covered cathode 12 at least, and the intrusion of anti-sealing or oxygen target 12 and luminescent layer 110b thus, prevents the oxidation of negative electrode 12 and luminescent layer 110b.In addition, hermetic sealing substrate 3b engages with sealing resin 3a, protection sealing resin 3a, preferably any one of glass plate, metallic plate or resin plate.And as described later, the preferred jar seal type that adopts also can carry out the absorption of oxygen by gettering material at the part configuration gettering material of depression, and oxidation takes place in the inside that is sealed to prevent.

Figure 13 is the figure that the light-emitting component in the organic El device is amplified, and especially the figure of the cross-section structure of viewing area has been amplified in expression.Illustrate three pixel region A among this Figure 13.

Organic El device 201 by substrate 10, circuit element portion 14 and light-emitting component portion 11 with circuit such as TFT of being formed on this substrate etc. constitute, this light-emitting component portion 11 has: further be formed at the pixel electrode (anode) 111 on this circuit element portion 14, the functional layer 110 that comprises hole injection layer 110a and luminescent layer 110b and negative electrode 12.Pixel electrodes 111, hole injection layer 110a, luminescent layer 110b and negative electrode 12 constitute organic EL.In this organic El device 201, the light transmission circuit element portion 14 and the substrate 10 that send to substrate 10 sides from functional layer 110, shine the downside (observer's side) of substrate 10, and, the light that is issued to the opposition side of substrate 10 from functional layer 110 is reflected by negative electrode 12, see through circuit element portion 14 and substrate 10, shine the downside (observer's side) of substrate 10.

Inorganic matter cofferdam layer 18 control light-emitting zones, as shown in figure 13, it is formed between the pixel electrode 111,111, so that divide pixel electrode 111.And the part of inorganic matter cofferdam layer 18 is crossed on the edge part of pixel electrode 111 and is formed, and inorganic matter cofferdam layer 18 and pixel electrode 111 overlap overlooking last branch.Pixel electrode 111 is provided with the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18, and the area of the 18c of this pixel openings portion becomes aperture opening ratio.In addition, the thickness of inorganic matter cofferdam layer 18 for example is preferably the scope of 30～200nm, and 50～100nm is good especially.

Here, inorganic matter cofferdam layer 118 is formed by the material that has mixed trace carbon (C) among the SiN.Plasma treatment is implemented on these inorganic matter cofferdam layer 18 surfaces, and inorganic matter cofferdam layer 18 surfaces are lyophobicity.

And, also can adopt for example SiO ₂, TiO ₂, inorganic material such as SiN constitutes inorganic matter cofferdam layer 18.At this moment, being formed with by silane such as trimethoxy silanes on inorganic matter cofferdam layer 18 surfaces is the monofilm that coupling agent constitutes, and inorganic matter cofferdam layer 18 surfaces are lyophobicity.

Thus, inorganic matter cofferdam layer 18 forms material with respect to hole injection layer described later and has lyophobicity, and forms material with respect to luminescent layer, compares with hole injection layer formation material to have lyophily.

As shown in figure 13, on inorganic matter cofferdam layer 18, be formed with organic substance cofferdam layer 220 (second next door).Consider photolithographic precision, organic substance cofferdam layer 220 is vacated in the inner part at interval than the edge of inorganic matter cofferdam layer 18 and is formed.Thus, the edge part at the inorganic matter cofferdam layer is provided with the outstanding protuberance 18b from the side 220a of organic substance cofferdam layer 220.The face that the section shape of organic substance cofferdam layer 220 becomes with respect to substrate 10 is provided with the trapezoidal shape of inclination for the inclined plane of acute angle.And the side 220a of organic substance cofferdam layer 220 is implemented lyophoby and handles.

As shown in figure 13, functional layer 110 has: be formed at the hole injection layer 110a on the pixel electrode 111; With the luminescent layer 110b that is layered on the hole injection layer 110a.

Hole injection layer 110a is formed at by on the pixel electrode 111 in the 18c of pixel openings portion of inorganic matter cofferdam layer 18 divisions.In the present embodiment, the surface of inorganic matter cofferdam layer 18 has been implemented the lyophoby processing.Therefore, when forming hole injection layer 110a, be directed onto on the inorganic matter cofferdam layer 18, also can be flicked and flow in the 18c of pixel openings portion, can not spill from the 18c of pixel openings portion even hole injection layer forms material by liquid phase method.And by adjusting ejection condition such as spray volume, can form: the upper level of the inorganic matter cofferdam layer 18 (protuberance 18b) that forms is roughly the same with crossing on pixel electrode 111 for the upper level of hole injection layer 110a.Thus, the upper surface of the upper surface of inorganic matter cofferdam layer 18 and hole injection layer 110a is configured to continuous plane.

In addition, form material, for example preferred mixture that adopts poly-Ethylenedioxy Thiophene polythiofuran derivatives such as (PEDOT) and polystyrolsulfon acid etc. as hole injection layer.

As shown in figure 13, luminescent layer 110b is formed on whole of hole injection layer 110a in the peristome 220c that is divided by organic substance cofferdam layer 220.Luminescent layer 110b has luminous red light emitting layer for red (R), luminous green light emitting layer and luminous three kinds of blue light-emitting layers for blue (B) for green (G), and each luminescent layer is configured to striated.Polymeric luminescence layer as luminescent layer 110b forms material, the preferred macromolecule organic material that adopts poly-fluorenes (PF) derivative, p-phenylene vinylene (PPV) derivative, polyparaphenylene (PPP) derivative, polyvinylcarbazole (PVK), polythiofuran derivative, polymethyl-benzene base silane polysilanes such as (PMPS) system etc.As the thickness of luminescent layer 110b, preference is as being 50～100nm.

In the present embodiment, the surface of organic substance cofferdam layer 220 has been implemented the lyophoby processing.Therefore, be ejected into luminescent layer in the peristome 220c and form material and can not escape to neighbor, but on the hole injection layer 110a of regulation and inorganic matter cofferdam layer 18 whole film forming.

As shown in figure 13, negative electrode 12 forms opposed to each other with pixel electrode 111 on whole of the organic substance cofferdam layer 220 that comprises luminescent layer 110b.This negative electrode 12 begins to constitute according to the order stacked above one another of calcium (Ca) layer with aluminium (Al) layer from substrate 10 sides.The Al layer will reflex to substrate 10 sides (observer's side) from the light that luminescent layer 110b sends, and except aluminium lamination, also preferably be made of the stacked film of silver layer or aluminium lamination and silver layer etc.And, for the material that makes luminescent layer 110b can be efficiently luminous, also between the calcium layer of luminescent layer 110b and negative electrode 12, form lithium fluoride (LiF) layer sometimes.As the thickness of calcium layer, for example be preferably the scope of 2～20nm, especially be good about 10nm.In addition,, for example be preferably 100～1000nm, 200nm left and right sides You Jia as the thickness of aluminium lamination.And then, also can on aluminium lamination, be provided with by SiO, SiO ₂, composition such as SiN the protective layer used of anti-oxidation.

(manufacture method of organic El device)

Then, the manufacture method to the organic El device of present embodiment describes.

Figure 14～Figure 19 is the cutaway view of manufacturing process of the organic El device of expression the 3rd execution mode.

In addition, because the manufacturing process of TFT etc. has been adopted known method, therefore omitted explanation.

(the inorganic matter cofferdam layer forms operation)

At first, adopt carbon (C) or carborundum (SiC) trace are mixed in the material that silicon nitride (SiN) forms, on whole of the second interlayer dielectric 144b that comprises pixel electrode 111, become the insulating barrier of inorganic matter cofferdam layer by sputtering method.Then, after having applied the photonasty resist on the whole insulating barrier, use the position corresponding, the photonasty resist is carried out photoetching treatment, the photonasty resist is patterned as the regulation shape by the mask of opening with the 18c of pixel openings portion on the pixel electrode 111.Then, the photonasty resist behind this patterning as mask, is carried out etch processes to insulating barrier.As shown in figure 14,, formed division pixel electrode 111, and a part is crossed over the inorganic matter cofferdam layer 18 on the marginal portion of pixel electrode 111 by this processing.And the thickness of inorganic matter cofferdam layer 18 is preferably the scope of 30～200nm, and 50～100nm is good especially.

(the organic substance cofferdam layer forms operation)

Then, on inorganic matter cofferdam layer 18 and pixel electrode 111 whole, by the organic substance cofferdam layer formation material of spin-coating method film forming acrylic acid, polyimides etc.

Then, after having applied the photonasty resist on whole of organic substance cofferdam layer formation material, use has the mask of peristome, and the photonasty resist is carried out photoetching treatment, and wherein the aperture efficiency of peristome is wide by the 18c of pixel openings portion of inorganic matter cofferdam layer 18 divisions.At this moment, consider the precision of photoetching treatment, be controlled to be in the side that forms organic substance cofferdam layer 220 than the position in the inner part, edge of inorganic matter cofferdam layer 18.That is, carry out photoetching treatment, so that big by the pixel openings portion of inorganic matter cofferdam layer 18 divisions by the open area ratio of the peristome of organic substance cofferdam layer 220 divisions.

Then, the photonasty resist behind the patterning as mask, is formed material to the organic substance cofferdam layer and carries out etch processes.At this moment, adjust etching conditions such as etching liquid, etching period and carry out etch processes, so that organic substance cofferdam layer 220 becomes the section trapezoidal shape with inclined plane.Like this, as shown in figure 15, on inorganic matter cofferdam layer 18, form organic substance cofferdam layer 200.

(activation processing operation)

Then, activation processing is implemented on the electrode surface of pixel electrode 111, the surperficial 18a of inorganic matter cofferdam layer 18 and the surface of organic substance cofferdam layer 220.In activation processing, comprise the adjustment, control, the cleaning of pixel electrode surface, the lyophily processing of pixel electrode surface of the work function in the pixel electrode 111.

At first, as the lyophily processing, carrying out in air atmosphere with oxygen is the plasma treatment (O that handles gas ₂Plasma treatment).By this O ₂Plasma treatment, the surperficial 18a of the electrode surface 111a of pixel electrode 111, the protuberance 18b of inorganic matter cofferdam layer 18 (the slightly surperficial 18a of following province) is handled by lyophily.In addition, this O ₂Plasma treatment has not only been given lyophily, has also carried out above-mentioned adjustment as the cleaning on the ITO of pixel electrode, work function.

Next, as the lyophoby processing, carrying out in air atmosphere with the tetrafluoromethane is the plasma treatment (CF that handles gas ₄Plasma treatment).In addition, handle gas and be not limited to tetrafluoromethane (carbon tetrafluoride), also can adopt other carbon fluorine is gas.Pass through CF ₄Plasma treatment, the surperficial 18a of inorganic matter cofferdam layer 18 and the surface of organic substance cofferdam layer 220 are handled by lyophoby.Because it is few that inorganic matter cofferdam layer and organic substance cofferdam layer are compared the carbon amount, so represent the lyophobicity lower than organic substance cofferdam layer.And, pass through O ₂Plasma carries out pre-treatment and has the feature of being fluoridized easily, and is effective especially in the present embodiment.In addition, the electrode surface 111a of pixel electrode 111 what also be subjected to the influence of this tetrafluoromethane plasma treatment, but to the influence of wetability seldom.

(hole injection layer formation operation)

Then, as shown in figure 16, the hole injection layer that will add the diethylene glycol equal solvent in the aqueous dispersions of the mixture that contains PEDOT/PSS (PEDOT: PSS=1: 6 or 1: 20) forms material 109a, is ejected in the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18 by ink discharge device IJ.

Here, the lyophoby processing has been implemented on inorganic matter cofferdam layer 18 surfaces, the contact angle that the surperficial 18a of inorganic matter cofferdam layer 18 and hole injection layer form material 109a is about 80 degree.Therefore, be directed onto on the protuberance 18b of inorganic matter cofferdam layer 18 even described hole injection layer forms material 109a, hole injection layer forms material 109a and also can be flicked and flow in the 18c of pixel openings portion.

And, in the present embodiment, can control from the hole injection layer of ink discharge device IJ ejection and form the spray volume of material 109a and the hole injection layer that sprayed forms the solid component concentration of contained PEDOT/PSS the solvent of material 109a etc.Thus, can will be formed on the upper level of the inorganic matter cofferdam layer 18 on the marginal portion of pixel electrode 111, form identical with the upper level of hole injection layer 110a after the dry hole injection layer that is sprayed forms material 109a.

(drying process)

Then, as shown in figure 17, make the hole injection layer of ejection form the contained solvent evaporation of material, form hole injection layer 110a on the pixel electrode 111 in the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18 by dried.Specifically, after the hole injection layer of ejection formed material and carry out vacuumize, in atmospheric pressure with 200 ℃ temperature drying 10 minutes.By this dried, as shown in figure 17, can form the hole injection layer 110a that has equal height with inorganic matter cofferdam layer 18 upper surfaces that on the marginal portion of pixel electrode 111, form.And then, because the surperficial 18a of inorganic matter cofferdam layer 18 has been implemented the lyophoby processing, thus can residual hole injection layer 110a on the inorganic matter cofferdam layer 18, and the upper surface of the upper surface of inorganic matter cofferdam layer 18 and hole injection layer 110a becomes continuous tabular surface.

(luminescent layer formation operation)

Next, as shown in figure 18, go up ejection luminescent layer formation material 113a by the protuberance 18b of the inorganic matter cofferdam layer 18 of ink discharge device IJ in the peristome 220c that is divided by organic substance cofferdam layer 220 and whole of hole injection layer 110a.Form material 113a as luminescent layer, can adopt the solution that has dissolved poly-fluorenes (PF) derivative, p-phenylene vinylene (PPV) derivative with fragrant family hydrocarbon solvent.Can adopt the benzene solvent of band alkyl such as trimethylbenzene, ring ethylo benzene, detergent alkylate, the methoxy ethoxy benzene of band ether etc. as fragrant family hydrocarbon solvent.

Here,, flicked on the cofferdam layer surface, be accommodated in the peristome 220c, and can not escape to or sneak into neighbor (peristome) so the luminescent layer that is sprayed forms material 113a because the top layer of organic substance cofferdam layer 220 has lyophobicity.And, the surperficial 18a of inorganic matter cofferdam layer 18 also has lyophobicity, but it is because lower than the lyophobicity on organic substance cofferdam layer surface, luminescent layer forms among the material 113a and contains the low aromatic series based material of surface tension, so the wetability (contact angle) that luminescent layer forms the surperficial surperficial 18a with inorganic matter cofferdam layer 18 with respect to hole injection layer of material is big difference very not, so luminescent layer formation material 113a also can wetting equably expansion on the surperficial 18a of the surface of hole injection layer 110a and inorganic matter cofferdam layer 18.

Particularly, hole injection layer 110a surface is about 40 degree with the contact angle that luminescent layer forms material 113a.And inorganic matter cofferdam layer 112a surface is about 50 degree with the contact angle that luminescent layer forms material 113a.Therefore, the upper surface of the upper surface of hole injection layer 110a and inorganic matter cofferdam layer 112a, the contact angle that forms material with luminescent layer is roughly the same.

Then, as shown in figure 19, make the luminescent layer of ink-jet coating form the solvent evaporation that material 113a is contained, on inorganic matter cofferdam layer 18 and hole injection layer 110a whole, form luminescent layer 110b by dried.Specifically, after the luminescent layer that sprayed formed material 113a and carry out the vacuum removal of solvents, and then the temperature with 130 ℃ was implemented annealing in process 60 minutes in inert atmospheres such as argon or nitrogen.Thus, can form thickness and for example be the uniformly light-emitting layer 110b of 80nm.

(negative electrode formation operation)

Then, as shown in figure 20,, form the negative electrode 12 that constitutes by these stacked films by heating in vacuum vapour deposition method stacked above one another calcium layer and aluminium lamination on whole of luminescent layer 110b.In addition, as mentioned above, also can form the lithium fluoride layer in the lower floor of calcium layer.And, for anti-oxidation, also preferably on negative electrode 12, form SiO ₂, protective layer such as SiN.

At last, turn back to Figure 12 (b), the sealing resin 3a that coating is made of heat reactive resin or ultraviolet curable resin on whole of negative electrode 12, stacked hermetic sealing substrate 3b on sealing resin 3a and form sealing 3.Sealing process preferably carries out in inert atmospheres such as nitrogen, argon, helium.

By this method, can make organic El device 201.

In addition, omit hole transporting layer in the above-described embodiment, but also can between hole injection layer 110a and luminescent layer 110b, form hole transporting layer.As the material of hole transporting layer, can adopt the triphenylamine based polymer.Thus, luminescent layer 110b can be more effectively the hole be injected into, therefore efficient, life-span superior characteristic can be obtained.

According to present embodiment, because inorganic matter cofferdam layer 18 has lyophobicity with respect to hole injection layer 110a, so the hole injection layer formation material 109a that is sprayed onto on the inorganic matter cofferdam layer 18 can be flicked, and flow in the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18.And the height of the height of hole injection layer 110a upper surface and inorganic matter cofferdam layer 18 upper surfaces is roughly the same, may be controlled to hole injection layer formation material and can not drain on the inorganic matter cofferdam layer 18.Therefore, hole injection layer 110a can not be configured to the outside from the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18.Like this, because the upper surface of inorganic matter cofferdam layer 18 and the upper surface of hole injection layer 110a are roughly the same height, so can form even and smooth hole injection layer 110a and luminescent layer 110b.And then, owing to can make uniform film thickness,, can realize the homogenizing of luminescent lifetime so there is not the luminescent lifetime inequality at marginal portion and the middle body of hole injection layer 110a and luminescent layer 110b.

(the 4th execution mode)

Then, with reference to accompanying drawing the 4th execution mode of the present invention is described.

Present embodiment is different on the method for the inorganic matter cofferdam layer being implemented the lyophoby processing with above-mentioned the 3rd execution mode.In addition, the basic comprising of other organic El device and manufacture method are identical with above-mentioned the 3rd execution mode, give identical mark to common inscape, and detailed.

Figure 21 and Figure 22 are the cutaway views of manufacturing process of the organic El device of expression present embodiment.

At first, by film forming SiO on whole of the second interlayer dielectric 144b that comprises pixel electrode 111 such as CVD method, sputtering method, vapour deposition method ₂, TiO ₂Etc. inorganic material.Then, by photoetching treatment, etch processes, as shown in figure 21, form inorganic matter cofferdam layer 18.

Then, as shown in figure 21, on inorganic matter cofferdam layer 18, form the organic substance cofferdam layer 220 that constitutes by polyimides or alkali.

Then, on pixel electrode 111, inorganic matter cofferdam layer 18 and organic substance cofferdam layer 220 surface separately, use O ₂And CF ₄Processing gas carry out plasma treatment continuously.Handle by this plasma, the electrode surface 111a of pixel electrode 111 and the surperficial 18a of inorganic matter cofferdam layer 18 are handled by lyophily.On the other hand, the side 220a of organic substance cofferdam layer 220 is handled by lyophoby.

Then, the aforesaid substrate of having implemented plasma treatment being immersed in silane such as trimethoxy silane is in the coupling agent solution.Thus, as shown in figure 21, on the electrode surface 111a of surperficial 18a that has been implemented the inorganic matter cofferdam layer 18 that lyophily handles and pixel electrode, form the monofilm 214a of coupling agent.

Then, as shown in figure 21, use the mask 60 that has peristome 60a in the position corresponding, by via this mask irradiation ultraviolet radiation, remove that electrode surface 111a goes up and the silane of inorganic matter cofferdam layer 18 sides are coupling agent with the 18c of pixel openings portion.

Like this, as shown in figure 22, only going up formation silane at the surperficial 18a of inorganic matter cofferdam layer 18 (above the protuberance 18b) is coupling agent 214.Silane be coupling agent and oxide connecting airtight property might as well, by selecting terminal functional group, can adjust wetability with ink such as hole injection layer material.

According to present embodiment, can reach and the same action effect of above-mentioned the 3rd execution mode.

(the 5th execution mode)

Followingly the 5th execution mode of the present invention is described with reference to accompanying drawing.

And the organic El device of present embodiment is the bottom emission mode of taking out the light that is sent by luminescent layer from substrate-side.

(organic El device)

Figure 23 (a) is the vertical view that the summary of expression organic El device constitutes, and Figure 23 (b) is the cutaway view of the organic El device of (a) along the A-B line.

As shown in Figure 1, the organic El device 301 (light-emitting device) of present embodiment has following circuit and constitutes, and this circuit has connected up respectively: multi-strip scanning line 101; Many signal line 102 along the direction extension that intersects with scan line 101; With many power lines 103 that extend side by side with holding wire 102.Near each intersection point of scan line 101 and holding wire 102, be provided with pixel region A.

Connecting on the holding wire 102 possess shift register, the data side drive circuit 104 of level shifter, video line and analog switch etc.And, connecting the scan-side drive circuit 105 that possesses shift register and level shifter etc. on the scan line 101.And, be provided with among each pixel region A: the switch thin-film transistor 112 that sweep signal is provided to gate electrode via scan line 101; Maintenance via this switch with thin-film transistor 112 and from the maintenance electric capacity (cap) of the total picture element signal of holding wire 102; The driving that gate electrode has been supplied to the picture element signal that this maintenance electric capacity (cap) kept is with thin-film transistor 123; When being electrically connected with power line 103 with thin-film transistor 123, be provided the pixel electrode 111 of drive current from this power line 103 via this driving; And be clamped in functional layer 110 between this pixel electrode 111 and the negative electrode (opposite electrode) 12.Electrode 111, negative electrode 12 by the front constitute light-emitting component with functional layer 110, for example organic EL.

According to this formation, if scan line 101 is driven, make switch with thin-film transistor 112 conductings, then the current potential of Ci Shi holding wire 102 is held electric capacity cap maintenance, keep the state of electric capacity cap according to this, decision drives the conduction and cut-off state with thin-film transistor 123.Then, via the raceway groove that drives with thin-film transistor 123, electric current flows to pixel electrode 111 from power line 103, and then via functional layer 110, current direction negative electrode 12.Functional layer 110 is according to flowing through wherein the magnitude of current and luminous.

Shown in Figure 23 (a) and (b), the organic El device 301 of present embodiment possesses: the transparency carrier 10 that is made of glass etc., possess the light-emitting component portion 11 that is configured to rectangular light-emitting component on substrate 10.In addition, light-emitting component is made of anode, functional layer, negative electrode, and the called function layer is meant hole injection layer, luminescent layer, electronics injection/transfer layer etc.Substrate 10 for example is transparency carriers such as glass, is divided into the viewing area 2a that is positioned at substrate 10 central authorities and is positioned at the edge of substrate 10 and is in the non-display area 2b in the viewing area 2a outside.Viewing area 2a is by being configured to the zone that rectangular light-emitting component forms, being also referred to as effective viewing area.And, be formed with non-display area 2b in the outside of viewing area.And, be formed with illusory viewing area 2d with viewing area 2a adjacency at non-display area 2b.In addition, shown in Figure 23 (b), possess circuit element portion 14 between light-emitting component portion 11 and the substrate 10, possess above-mentioned scan line, holding wire, maintenance electric capacity, switch thin-film transistor in this circuit element portion 14, drive and use thin-film transistor 123 etc.And, an end of negative electrode 12 be formed at substrate 10 on negative electrode with the wiring 12a be connected, an end 12b of this wiring is connected with the wiring 5a on the flexible substrate 5.And the drive IC 6 (drive circuit) that is possessed on wiring 5a and the flexible substrate 5 is connected.

In addition, shown in Figure 23 (a) and Figure 23 (b), dispose above-mentioned power line 103 (103R, 103G, 103B) among the non-display area 2b of circuit element portion 14.And the both sides of the viewing area 2a that Figure 23 (a) is put down in writing dispose above-mentioned scan-side drive circuit 105,105.This scan-side drive circuit 105,105 is set in the circuit element portion 14 of illusory viewing area 2d downside.And then, be provided with the drive circuit that is connected with scan-side drive circuit 105,105 in the circuit element portion 14 with control signal wiring 105a and drive circuit power-supply wiring 105b.And the upside (in the drawings, upside is the opposition side of drive IC 6) of the viewing area 2a that is put down in writing at Figure 23 (a) disposes check circuit 106.Can be undertaken in the manufacture process or the quality, the inspection of defective of organic El device when dispatching from the factory by this check circuit 106.

And, shown in Figure 23 (b), light-emitting component portion 11 based on be layered in a plurality of pixel electrode 111... on each functional layer 110 and the plane domain between each pixel electrode 111 and the functional layer 110 is possessed and inorganic matter cofferdam layer 18 that each functional layer 110 plane is divided and constituting.On functional layer 110, dispose negative electrode 12.Constitute light-emitting component (for example organic EL) by these pixel electrodes 111, functional layer 110 and negative electrode 12.Here, pixel electrode 111 is for example formed by ITO, by pattern form overlook roughly rectangular.The thickness of this pixel electrode 111 for example is preferably the scope of 50～200nm, especially is good about 150nm.Possesses inorganic matter cofferdam layer 18 (first next door) between the adjacent pixel electrodes 111....

And, shown in Figure 23 (b), in light-emitting component portion 11, possess sealing 3.Sealing portion 3 constitutes by being coated on sealing resin 3a that heat reactive resin on the negative electrode 12 or ultraviolet curable resin etc. form and the hermetic sealing substrate 3b that is disposed on the sealing resin 3a.In addition, as sealing resin 3a, can not produce the material of gas, solvent etc. during preferred consolidation.Sealing portion 3 forms covered cathode 12 at least, prevents the intrusion of sealing or oxygen target 12 and luminescent layer 110b, thereby prevents the oxidation of negative electrode 12 and luminescent layer 110b.In addition, hermetic sealing substrate 3b engages with sealing resin 3a, protection sealing resin 3a, preferably any one of glass plate, metallic plate or resin plate.And as described later, the preferred jar seal type that adopts also can carry out the absorption of oxygen by gettering material at the part configuration gettering material of depression, and oxidation takes place in the inside that is sealed to prevent.

Figure 24 is the figure after the light-emitting component in the organic El device is amplified, and especially the figure of the cross-section structure of viewing area has been amplified in expression.Illustrate three pixel region A among this Figure 24.

This organic El device 301 by substrate 10, circuit element portion 14 and light-emitting component portion 11 with circuit such as TFT of being formed on this substrate etc. constitute, this light-emitting component portion 11 has: further be formed at the pixel electrode (anode) 111 on this circuit element portion 14, the functional layer 110 that comprises hole injection layer 110a and luminescent layer 110b and negative electrode 12.Pixel electrodes 111, hole injection layer 110a, luminescent layer 110b and negative electrode 12 can constitute organic EL.In this organic El device 301, the light transmission circuit element portion 14 and the substrate 10 that send to substrate 10 sides from functional layer 110, shine the downside (observer's side) of substrate 10, and, the light that is issued to the opposition side of substrate 10 from functional layer 110 is reflected by negative electrode 12, see through circuit element portion 14 and substrate 10, shine the downside (observer's side) of substrate 10.

Inorganic matter cofferdam layer 18 control light-emitting zones as shown in figure 24, are formed between the pixel electrode 111,111, so that divide pixel electrode 111.And the part of inorganic matter cofferdam layer 18 is crossed on the edge part of pixel electrode 111 and is formed, and inorganic matter cofferdam layer 18 and pixel electrode 111 overlap overlooking last branch.Thus, pixel electrode 111 is provided with the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18, and the area of the 18c of this pixel openings portion becomes aperture opening ratio.In addition, inorganic matter cofferdam layer 18 is for example by SiO ₂, TiO ₂, the material that contains trace carbon among inorganic material such as SiN or the SiN forms.The thickness of this inorganic matter cofferdam layer 18 for example is preferably the scope of 30～200nm, and 50～100nm is good especially.

On inorganic matter cofferdam layer 18, be formed with organic substance cofferdam layer 320.Consider the precision of photolithographic processes, organic substance cofferdam layer 320 is vacated in the inner part at interval than the edge of inorganic matter cofferdam layer 18 and is formed.Thus, be provided with side from organic substance cofferdam layer 320 to the side-prominent protuberance 18b of the central portion of pixel electrode 111 at the edge part of inorganic matter cofferdam layer.

In the present embodiment, organic substance cofferdam layer 320 begins to stack gradually in order first organic matter layer 322, oxide skin(coating) (wall part insulating barrier) 324 and second organic matter layer 326 from substrate 10 sides and constitutes.The shape of organic substance cofferdam layer 320 forms the trapezoidal shape of analysing and observe with inclined plane.First organic matter layer 322 and second organic matter layer 326 are made of acrylic acid or polyimides, and oxide skin(coating) 324 is by SiO ₂, TiO ₂Constitute.And, the side 322a of first organic matter layer 322 and the side 326a of second organic matter layer 326 have been implemented the lyophoby processing, implemented the lyophily processing on the side 324a to oxide skin(coating) 324.That is, the side 324a of oxide skin(coating) 324 becomes the low zones such as side 322a of lyophobicity than first organic matter layer 322, and the side 324a of this oxide skin(coating) 324 becomes pinning point.

Here, the thickness of first organic matter layer 322 preferably with thickness same degree as the luminescent layer of target.Particularly, be preferably 50～100nm.As the thickness of second organic matter layer 326, be preferably 0.5 μ m～2 μ m.As the thickness of oxide skin(coating) 324, preferably be thinned to 20nm～50nm.If the thickness of oxide skin(coating) 324 thickens, then the scope of the pinning point on oxide skin(coating) 324 surfaces also broadens, and pinning point can't be controlled (fixing) at certain position.In addition, replace the oxide skin(coating) 324 of organic substance cofferdam layer 320, also can form the layer that has adopted materials such as SiN.

As shown in figure 24, functional layer 110 has: be formed at the hole injection layer 110a on the pixel electrode 111; With the luminescent layer 110b that is layered on the hole injection layer 110a.

As shown in figure 24, hole injection layer 110a is formed at by on the pixel electrode 111 in the 18c of pixel openings portion of inorganic matter cofferdam layer 18 divisions.And the marginal portion of hole injection layer 110a is crossed on the protuberance 18b of inorganic matter cofferdam layer 18 and is formed.Form material as hole injection layer, for example preferred mixture (PEDOT/PSS) that adopts poly-Ethylenedioxy Thiophene polythiofuran derivatives such as (PEDOT) and polystyrolsulfon acid (PSS) etc.

As shown in figure 24, luminescent layer 110b is formed on whole of hole injection layer 110a in the peristome 320c that is divided by organic substance cofferdam layer 320.

Here, the outer rim of luminescent layer contacts with the 324a that becomes pinning point of the oxide skin(coating) 324 of organic substance cofferdam layer 320, and the height of the upper surface of luminescent layer 110b is formed into till the height of oxide skin(coating) 324 of organic substance cofferdam layer 320.Luminescent layer 110b has luminous red light emitting layer for red (R), luminous green light emitting layer and luminous three kinds of blue light-emitting layers for blue (B) for green (G), and each luminescent layer is configured to striated.Polymeric luminescence layer as luminescent layer 110b forms material, the preferred macromolecule organic material that adopts poly-fluorenes (PF) derivative, p-phenylene vinylene (PPV) derivative, polyparaphenylene (PPP) derivative, polyvinylcarbazole (PVK), polythiofuran derivative, polymethyl-benzene base silane polysilanes such as (PMPS) system etc.As the thickness of luminescent layer 110b, preference is as being 50～100nm.

As shown in figure 24, negative electrode 12 forms opposed to each other with pixel electrode 111 on whole of the organic substance cofferdam layer 320 that comprises luminescent layer 110b.This negative electrode 12 begins to constitute according to the sequential cascade of calcium (Ca) layer with aluminium (Al) layer from substrate 10 sides.Aluminium lamination will reflex to substrate 10 sides (observer's side) from the light that luminescent layer 110b sends, and except aluminium lamination, also preferably be made of the stacked film of silver layer or aluminium lamination and silver layer etc.And, for the material that makes luminescent layer 110b can be luminous efficiently, also between the calcium layer of luminescent layer 110b and negative electrode 12, form lithium fluoride (LiF) layer sometimes.As the thickness of calcium layer, for example be preferably the scope of 2～20nm, especially about 10nm for well.In addition,, for example be preferably 100～1000nm, 200nm left and right sides You Jia as the thickness of aluminium lamination.And then, also can on aluminium lamination, be provided with by SiO, SiO ₂, formation such as SiN the protective layer used of anti-oxidation.

(manufacture method of organic El device)

Then, the manufacture method to the organic El device of the 5th execution mode describes.

Figure 25～Figure 34 is the cutaway view of manufacturing process of the organic El device of expression the 5th execution mode.

In addition, the manufacturing process about TFT etc. can adopt known method, therefore omits.

(the inorganic matter cofferdam layer forms operation)

At first, by CVD method, sputtering method, vapour deposition method etc., film forming becomes SiO on whole of the second interlayer dielectric 144b that comprises pixel electrode 111 ₂Or TiO ₂Insulating barrier Deng the inorganic matter cofferdam layer.

Then, after having applied the photonasty resist on the whole insulating barrier, use the position corresponding, the photonasty resist is carried out photoetching treatment, the photonasty resist is patterned as the regulation shape by the mask of opening with the 18c of pixel openings portion.Then, the photonasty resist behind this patterning as mask, is carried out etch processes to insulating barrier.As shown in figure 25,, formed division pixel electrode 111, and a part is crossed over the inorganic matter cofferdam layer 18 on the marginal portion of pixel electrode 111 by this processing.

(the organic substance cofferdam layer forms operation)

Then, as shown in figure 26, on inorganic matter cofferdam layer 18 and pixel electrode 111 whole, by first organic matter layer formation material 322b of spin-coating method film forming acrylic acid, polyimides etc.

Next, as shown in figure 26, by CVD method, sputtering method, vapour deposition method etc., film forming SiO on whole of the formation of first organic matter layer after film forming material 322b ₂, TiO ₂Form material 324b Deng oxide skin(coating).

Then, as shown in figure 26, second organic matter layer by spin-coating method film forming acrylic acid, polyimides etc. on whole of the inorganic material after the film forming forms material 326b.

Then, after having applied the photonasty resist on whole of second organic matter layer formation material 326b, use the position corresponding to be opened the mask of several mouthfuls, the photonasty resist is carried out photoetching treatment with the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18.At this moment, consider the precision of photoetching treatment, be controlled to be in the side that forms organic substance cofferdam layer 320 than the position in the inner part, edge of inorganic matter cofferdam layer 18.That is, carry out photoetching treatment, so that by the aperture area of the pixel openings portion of inorganic matter cofferdam layer 18 divisions, bigger than the peristome of being divided by organic substance cofferdam layer 320.

Then, the photonasty resist behind the patterning as mask, is carried out etch processes in the lump to first organic matter layer formation material 322b, oxide skin(coating) formation material 324b and second organic matter layer formation material 326b.At this moment, adjust etching conditions such as etching liquid, etching period and carry out etch processes, so that organic substance cofferdam layer 320 becomes the section trapezoidal shape with inclined plane.Like this, as shown in figure 27, on inorganic matter cofferdam layer 18, form by first organic matter layer 322, oxide skin(coating) 324,326 3 layers of organic substance cofferdam layer 320 that constitutes of second organic matter layer.In addition, the thickness of first organic matter layer 322 by adjusting inorganic matter cofferdam layer 18 can be adjusted the height of oxide skin(coating) 324.Thus, can control the position of pinning point.

(activation processing operation)

Then, activation processing is implemented on the electrode surface of pixel electrode 111, the surface of inorganic matter cofferdam layer 18 and the surface of organic substance cofferdam layer.In activation processing, comprise the lyophily processing of cleaning, pixel electrode surface, inorganic layer and oxide layer surface of adjustment, control, the pixel electrode surface of the work function in the pixel electrode 111.

At first, as the lyophily processing, carrying out in air atmosphere with oxygen is the plasma treatment (O that handles gas ₂Plasma treatment).By this O ₂Plasma treatment, the side 324a of the oxide skin(coating) 324 of the surperficial 18a of the electrode surface 111a of pixel electrode 111, the protuberance 18b of inorganic matter cofferdam layer 18 (the slightly surperficial 18a of following province) and organic substance cofferdam layer 320 is handled by lyophily.In addition, this O ₂Plasma treatment is not only given lyophily, also carries out the adjustment as the cleaning on the ITO of pixel electrode, work function as mentioned above.

Next, as the lyophoby processing, carrying out in air atmosphere with the tetrafluoromethane is the plasma treatment (CF that handles gas ₄Plasma treatment).In addition, handle gas and be not limited to tetrafluoromethane (carbon tetrafluoride), also can adopt other carbon fluorine is gas.Pass through CF ₄Plasma treatment, the side 322a of first organic matter layer 322 of organic substance cofferdam layer 320, the side 326a of second organic matter layer 326 with and upper surface 326c handled by lyophoby.And, pass through O ₂Plasma carries out pre-treatment and has the feature of being fluoridized easily, and is effective especially in the present embodiment.In addition, how many side 324a of the oxide skin(coating) 324 of the surperficial 18a of the electrode surface 111a of pixel electrode 111, inorganic matter cofferdam layer 18 and second organic matter layer 326 also is subjected to this CF ₄The influence of plasma treatment, but few to the influence of wetability.

(hole injection layer formation operation)

Then, as shown in figure 28, the hole injection layer that will add the diethylene glycol equal solvent in the aqueous dispersions of the mixture that contains PEDOT/PSS (PEDOT: PSS=1: 6 or 1: 20) forms material 109a, is ejected in the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18 by ink discharge device IJ.The electrode surface 111a that the hole injection layer formation material 109a that is sprayed is configured in pixel electrode 111 goes up on the protuberance 18b that reaches inorganic matter cofferdam layer 18.

(drying process)

Then, as shown in figure 29, make the hole injection layer of ejection form the contained solvent evaporation of material, form hole injection layer 110a on the pixel electrode 111 in the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18 by dried.Specifically, after the hole injection layer of ejection formed material and carry out vacuumize, in atmospheric pressure with 200 ℃ temperature drying 10 minutes.By this dried, as shown in figure 29, can form the hole injection layer 110a of leap on the marginal portion of the electrode surface 111a of pixel electrode 111 and inorganic matter cofferdam layer 18.

(luminescent layer formation operation)

Next, as shown in figure 30, by the inorganic matter cofferdam layer 18 of ink discharge device IJ in the peristome 320c that is divided by organic substance cofferdam layer 320 and whole the last ejection luminescent layer formation material 113a of hole injection layer 110a.Form material 113a as luminescent layer, can adopt the solution that has dissolved poly-fluorenes (PF) derivative, p-phenylene vinylene (PPV) derivative with fragrant family hydrocarbon solvent.Can adopt the benzene solvent of band alkyl such as trimethylbenzene, ring ethylo benzene, detergent alkylate, the methoxy ethoxy benzene of band ether etc. as fragrant family hydrocarbon solvent.

Then,, make the luminescent layer after the film forming form the contained solvent evaporation of material 113a, on inorganic matter cofferdam layer 18 and hole injection layer 110a whole, form luminescent layer 110b by dried as Figure 30 and shown in Figure 31.Specifically, the luminescent layer that is sprayed is formed material 113a except that after desolvating, and then the temperature with 130 ℃ was implemented annealing in process 60 minutes in inert atmospheres such as argon or nitrogen.Thus, the thickness that can form luminescent layer for example is the uniformly light-emitting layer 110b of 80nm.

In the present embodiment, in the middle of organic substance cofferdam layer 320, form oxide skin(coating) 324, the side 324a of this oxide skin(coating) 324 has been implemented the lyophily processing.Therefore, the luminescent layer that is ejected in the peristome 320c that is divided by organic substance cofferdam layer 320 forms material 113a, is basic point and pinned (pinning) with the side 324a of this oxide skin(coating) 324.That is, the outer rim that forms material 113a from the luminescent layer that contacts with the side 324a of the oxide skin(coating) 324 of organic substance cofferdam layer 320 begins drying, separates out, and makes luminescent layer form the contained solvent evaporation of material 113a.Like this, as shown in figure 31, for example on hole injection layer 110a, form the uniform film thickness of 80nm and smooth luminescent layer 110b.

(negative electrode formation operation)

Then, shown in figure 32, by the heating in vacuum vapour deposition method, stacked above one another calcium layer and aluminium lamination on whole of luminescent layer 110b form the negative electrode 12 that is made of these stacked films.In addition, as mentioned above, also can form the lithium fluoride layer in the lower floor of calcium layer.And, for anti-oxidation, also preferably on negative electrode 12, form SiO ₂, protective layer such as SiN.

At last, turn back to Figure 23 (b), the sealing resin 3a that coating is made up of heat reactive resin or ultraviolet curable resin on whole of negative electrode 12, stacked hermetic sealing substrate 3b on sealing resin 3a and form sealing 3.Sealing process preferably carries out in inert atmospheres such as nitrogen, argon, helium.

By this method, can make the organic El device 301 of the 5th execution mode.

In addition, omit hole transporting layer in the above-described 5th embodiment, but also can between hole injection layer 110a and luminescent layer 110b, form hole transporting layer.As the material of hole transporting layer, can adopt the triphenylamine based polymer.Thus, luminescent layer 110b can be efficiently the hole be injected into, therefore efficient, life-span superior characteristic can be obtained.

According to present embodiment, the side 324a of the oxide skin(coating) 324 of organic substance cofferdam layer 320, its lyophobicity is than the side 322a of first organic matter layer 322 and the side 326a low (lyophily) of second organic matter layer 326, and it is easy to be more wetting than the first area that the luminescent layer that is sprayed forms material.Therefore, the side 324a of this oxide skin(coating) 324 becomes the drying that luminescent layer forms material, the pinning point of separating out beginning.Therefore, the position of the side 324a of the oxide skin(coating) 324 by regulating organic substance cofferdam layer 320, the pinning point of can control (fix) beginning drying, separating out.Thus, form the spray volume of material etc. by the control luminescent layer, can control dried thickness, can form more even and smooth luminescent layer 110b.And then, owing to can make the marginal portion of hole injection layer 110a and luminescent layer 110b and the uniform film thickness of middle body,, can realize the homogenization of luminescent lifetime so there is not the luminescent lifetime inequality.

(the 6th execution mode)

Then, with reference to description of drawings the 6th execution mode of the present invention.

The difference of present embodiment and above-mentioned the 5th execution mode is, the shape difference of organic substance cofferdam layer 320.In addition, the basic comprising of other organic El device and manufacture method are identical with above-mentioned the 5th execution mode, give identical mark to common inscape, and detailed.

As shown in figure 33, the organic substance cofferdam layer 320 of present embodiment will be gone up cofferdam layer 334 (going up wall part) and following cofferdam layer 332 (following wall part) one formation.The width W 1 of the last cofferdam layer 324 of organic substance cofferdam layer 320 forms narrowlyer than the width W 2 of following cofferdam layer 332, and the side 332a of following cofferdam layer 322 is more outstanding laterally than the side 334a of last cofferdam layer 334.And, be provided with bend 340 at the intersection of the upper surface 332c of outstanding following cofferdam layer 332 and the side 334a of last cofferdam layer 334.This bend 340 becomes luminescent layer and forms the pinning point that material begins drying, separates out.And bend 340 can also can be arranged on the part along the complete cycle setting of organic substance cofferdam layer 320 sides.

In addition, the shape of organic substance cofferdam layer 320 is not limited to above-mentioned shape.For example, the recess of slit-shaped can be set on the part of the side of the organic substance cofferdam layer 320 of section trapezoidal shape, the protuberance of section triangle also can be set.The position that forms these bends 340 forms according to the thickness of luminescent layer 110b.

As the formation method of the organic substance cofferdam layer 320 of present embodiment, at first organic substance materials such as film forming acrylic acid, polyimides on pixel electrode 111 and inorganic matter cofferdam layer 18.Then, use the mask of the peristome with A/F W3 shown in Figure 33, carry out photoetching treatment.At this moment, till the position (degree of depth) that forms bend 340, carry out photoetching treatment.Then, use the mask of the peristome with A/F W4 shown in Figure 33 to carry out photoetching treatment.Like this, by the photoetching treatment in two stages, form bend 340 in the side of organic substance cofferdam layer 320.

According to present embodiment, the organic substance cofferdam layer 320 on the inorganic matter cofferdam layer 18 is provided with bend 340, and this bend 340 becomes the drying of beginning fluent material, the pinning point of separating out.Therefore, the luminescent layer formation material that is ejected into the zone of being divided by organic substance cofferdam layer 320 is a basic point with this bend 340, begins drying, separates out.Therefore, by regulating the position that forms bend 340, can control the dry pinning point of beginning.

(the 7th execution mode)

Then, as the 7th execution mode of the present invention, other manufacture methods of the organic El device manufacturing that goes for above-mentioned the 5th execution mode and the 6th execution mode are described by reference Figure 34 and Figure 35.

In the manufacture method of present embodiment, handle aspect the thickness of controlling the hole input layer different inorganic matter cofferdam layer 18 being implemented lyophobies with the 5th execution mode.In addition, the formation of other organic El device and manufacture method, the particularly formation of organic substance cofferdam layer 320 and manufacture method are identical with above-mentioned the 5th execution mode and the 6th execution mode, give identical mark to common inscape, and detailed.

(cofferdam layer formation operation)

At first, adopt carbon (C) trace (below 20%) is mixed in the material that silicon nitride (SiN) forms, on whole of the second interlayer dielectric 144b that comprises pixel electrode 111, become the insulating barrier of inorganic matter cofferdam layer by sputtering method.

Then, after the insulating barrier after the film forming is carried out photoetching treatment, the resist behind the patterning as mask, is carried out etch processes to insulating barrier.As shown in figure 34,, formed division pixel electrode 111, and a part is crossed over the inorganic matter cofferdam layer 18 on the marginal portion of pixel electrode 111 by this processing.

Then, as shown in figure 34, form organic substance cofferdam layer 320 on inorganic matter cofferdam layer 18, this organic substance cofferdam layer 320 begins to stack gradually in order first organic matter layer 322, oxide skin(coating) 324 and second organic matter layer 326 from substrate 10 sides.In addition, organic substance cofferdam layer 320 also can take to be provided with the structure of bend 340 as illustrated in the 6th execution mode.

Then, to pixel electrode 111, inorganic matter cofferdam layer 18 and organic substance cofferdam layer 320 surface separately, use the processing gas of oxygen and tetrafluoromethane to carry out the continuumpiston processing.Handle by this plasma, the electrode surface 111a of pixel electrode 111 is handled by lyophily.On the other hand, the side 326a of the side 322a of first organic matter layer 322 of organic substance cofferdam layer 320 and second organic matter layer 326 and the inorganic matter cofferdam layer that contains trace carbon are handled by lyophoby.Handle by this plasma, the carbon of the part of the surperficial 18a of inorganic matter cofferdam layer 18 is fluoridized, but can not changed by teflon (Teflon registered trade mark) as first organic matter layer, 322 grades.

(hole injection layer formation operation)

Then, as shown in figure 34, by ink discharge device hole injection layer is formed material and be ejected in the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18, make hole injection layer form the contained solvent evaporation of material by dried then, on pixel electrode 111, form hole injection layer 110a.

Here, the surperficial 18a of inorganic matter cofferdam layer 18 has been implemented the lyophoby processing, the contact angle that the surperficial 18a of inorganic matter cofferdam layer 18 and hole injection layer form material becomes 80 degree approximately.Therefore, even form the upper surface that material is directed onto the protuberance 18b of inorganic matter cofferdam layer 18 to the hole injection layer of the 18c of pixel openings portion of inorganic matter cofferdam layer 18 ejection, hole injection layer forms material and also can be flicked and flow in the 18c of pixel openings portion.

And, in the present embodiment, can control from the hole injection layer of ink discharge device IJ ejection and form the spray volume of material and the hole injection layer that sprayed forms the solid component concentration of contained PEDOT/PSS the solvent of material etc.Thus, can form the height of the height of the protuberance 18b upper surface of inorganic matter cofferdam layer 18 and hole injection layer 110a upper surface after dry hole injection layer forms material identical.

(luminescent layer formation operation)

Next, as shown in figure 35, on the protuberance 18b of hole injection layer 110a and inorganic matter cofferdam layer 18, form luminescent layer 110b.Here, because the surperficial 18a of inorganic matter cofferdam layer 18 has been implemented the lyophoby processing, so, can't form hole injection layer 110a on the inorganic matter cofferdam layer 18, can form continuous tabular surface by the upper surface of inorganic matter cofferdam layer 18 and the upper surface of hole injection layer 110a.Thus, can form thickness and for example be the even and smooth luminescent layer 110b of 80nm.

According to present embodiment, because inorganic matter cofferdam layer 18 handled by lyophoby, form material and can be flicked so be sprayed onto hole injection layer on the inorganic matter cofferdam layer 18, flow into by in the peristome of inorganic matter cofferdam layer 18 divisions.And the height of the height of hole injection layer upper surface and inorganic matter cofferdam layer 18 upper surfaces is roughly the same, may be controlled to hole injection layer formation material and can not drain on the inorganic matter cofferdam layer 18.Therefore, hole injection layer only is configured in by on the pixel electrode in the peristome of inorganic matter cofferdam layer 18 divisions, can not be configured on the inorganic matter cofferdam layer 18.Thus, can form even and smooth hole injection layer.In addition, owing to can on this hole injection layer, form luminescent layer, so can form even and smooth luminescent layer.And, can make the thickness of hole injection layer and luminescent layer even in marginal portion and middle body, so there is not the luminescent lifetime inequality, can realize the homogenization of luminescent lifetime.

In addition, according to present embodiment, because the surface of inorganic matter cofferdam layer 18 has lyophobicity, even so under the situation of having utilized ink discharge device, hole injection layer 110a forms the outside that material can not escape to the 18c of pixel openings portion that is divided by inorganic matter cofferdam layer 18 yet, can form hole injection layer 110a selectively.Therefore,, can suppress the waste of material by utilizing ink discharge device, can be low-cost and form hole injection layer 110a accurately.

And then, according to present embodiment, owing to have the organic substance cofferdam layer 320 that in the 5th execution mode and the 6th execution mode, illustrated, thus can suppress (fixing) pinning point, thus even and smooth luminescent layer can be formed.

(variation of the 7th execution mode)

Then, the manufacture method to the organic El device of present embodiment describes.

Present embodiment is different on the lyophoby processing method to inorganic matter cofferdam layer 18 surfaces with above-mentioned the 7th execution mode.In addition, the formation of other organic El device and manufacture method and above-mentioned the 5th～the 7th execution mode are same.Therefore, utilize Figure 34 to describe, give identical symbol common inscape, and detailed.

At first, by CVD method, sputtering method, vapour deposition method etc., film forming SiO on whole of the second interlayer dielectric 144b that comprises pixel electrode 111 ₂, TiO ₂Etc. inorganic material.Then, by photoetching treatment, etch processes, as shown in figure 34, form inorganic matter cofferdam layer 18.

Then, as shown in figure 34, form organic substance cofferdam layer 320 on inorganic matter cofferdam layer 18, this organic substance cofferdam layer 320 begins to stack gradually in order first organic matter layer 322, oxide skin(coating) 324 and second organic matter layer 326 from substrate 10 sides.

Then, to pixel electrode 111, inorganic matter cofferdam layer 18 and organic substance cofferdam layer 320 surface separately, use the processing gas of oxygen and tetrafluoromethane to carry out the continuumpiston processing.Handle by this plasma, the surperficial 18a of the electrode surface of pixel electrode 111 and inorganic matter cofferdam layer 18 is handled by lyophily.On the other hand, the side 326a of the side 322a of first organic matter layer 322 of organic substance cofferdam layer 320 and second organic matter layer 326 is handled by lyophoby.

Next, the aforesaid substrate of having implemented plasma treatment being immersed in silane such as trimethoxy silane is in the coupling agent solution.Thus, only form the monomolecular film of coupling agent on the surperficial 18a of the inorganic matter cofferdam layer 18 after being handled by lyophily.Like this, silane is the connecting airtight property of coupling agent and oxide, by selecting terminal functional group, can adjust the wetability that forms inks such as material with hole injection layer.

In addition, if it is in the coupling agent solution that aforesaid substrate is immersed in silane, then because pixel electrode 111 grades also are oxides, so silane is that coupling agent can be attached to the electrode surface of pixel electrode 111 sometimes.Under this situation, adopt the mask on the position corresponding, have peristome with the 18c of pixel openings portion, by via this mask irradiation ultraviolet radiation, also residual silicon methane series coupling agent on the surperficial 18a of inorganic matter cofferdam layer 18 only.

(electronic equipment)

Then, the electronic equipment that possesses organic El device illustrated in the above-mentioned execution mode 1,201,301 is described.

Figure 36 is the stereogram that the summary of expression mobile phone constitutes.

As shown in figure 36, mobile phone 600 comprises that with hinge 122 be center and the first fuselage 106a that can fold and the second fuselage 106b.And the first fuselage 106a is provided with: the display part 601, a plurality of action button 127, receiving mouth 124 and the antenna 126 that are made of organic El device.And the second fuselage 106b is provided with mouth piece 128.

According to this mobile phone 600, owing to possess above-mentioned organic El device 1,201,301, so the high-quality electronic equipment that does not have brightness disproportionation can be provided.

In addition, technical scope of the present invention is not limited to above-mentioned execution mode, without departing from the spirit and scope of the present invention, comprises the scheme of having added various changes in the above-described embodiment.

For example, in the above-described embodiment, the bottom emissive type organic El device being illustrated, also can be mainly from taking out the top emission structure organic El device of light with the device substrate opposition side.Under the situation of top emission structure organic El device, the preferred function of additional reflection film on pixel electrodes.And negative electrode has preferably adopted the film of transparent conductive materials such as ITO stacked.

Claims (26)

1. a light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

Between adjacent described pixel electrode, the mode to divide described pixel electrode and to overlap under overlooking with the marginal portion of described pixel electrode is provided with the insulating barrier that has lyophobicity with respect to the hole injection layer material,

The described pixel electrode of being divided by described insulating barrier is provided with described hole injection layer,

The height of the upper surface of described hole injection layer is roughly the same with the height of the upper surface that is arranged on the described insulating barrier on the marginal portion of described insulating barrier.

2. a light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

This light-emitting device possesses:

Between adjacent described pixel electrode, with first next door that has lyophobicity with respect to the hole injection layer material of dividing described pixel electrode and overlooking with the marginal portion of described pixel electrode that the mode that overlaps down is provided with; With

Be arranged on second next door on described first next door in the mode of dividing described pixel electrode,

On the described pixel electrode of being divided by described first next door, described hole injection layer is set,

The height of the upper surface of described hole injection layer is roughly the same with the height of the upper surface that is arranged on described first next door on the marginal portion of described pixel electrode.

3. light-emitting device according to claim 1 and 2 is characterized in that,

Described luminescent layer is set on described insulating barrier and described hole injection layer whole or described first next door and described hole injection layer whole.

4. a light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

This light-emitting device possesses:

Between adjacent described pixel electrode, to divide described pixel electrode and to overlook first next door that the following mode that overlaps is provided with the marginal portion of described pixel electrode; With

Be arranged on second next door on described first next door in the mode of dividing described pixel electrode,

Be provided with first area and the lyophobicity second area lower than described first area with lyophobicity in the side in described second next door.

5. light-emitting device according to claim 4 is characterized in that,

Described second next door constitutes by begin stacked above one another first organic matter layer, wall part insulating barrier and second organic matter layer from described substrate-side,

The surface of described wall part insulating barrier, its lyophobicity is surperficial lower than described first organic matter layer and described second organic matter layer.

6. a light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

This light-emitting device possesses:

Between adjacent described pixel electrode, to divide described pixel electrode and to overlook first next door that the following mode that overlaps is provided with the marginal portion of described pixel electrode; With

Be arranged on second next door on described first next door in the mode of dividing described pixel electrode,

At least a portion of the side in described second next door is provided with bend.

7. light-emitting device according to claim 6 is characterized in that,

Described second next door by last wall part and have than described side of going up wall part laterally the following wall part of outstanding side constitute,

The upper surface of described outstanding following wall part and described on the intersection of side of wall part described bend is set.

8. according to any described light-emitting device in the claim 1～4, it is characterized in that,

Described first next door has lyophobicity with respect to the hole injection layer material,

The height of the upper surface of described hole injection layer is roughly the same with the height of the upper surface that is arranged on described first next door on the marginal portion of described pixel electrode.

9. an exposure device comprises: claim 1 or 3 described light-emitting devices; With the photoconductor drum that can rotate,

By the light that penetrates from described light-emitting device described photoconductor drum is exposed.

10. the manufacture method of a light-emitting device, described light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

This manufacture method has:

Insulating barrier forms operation, between adjacent described pixel electrode, have lyophobicity or be implemented the insulating barrier that lyophoby is handled to divide described pixel electrode and to overlook the mode that overlaps down, to form with respect to the hole injection layer material with the marginal portion of described pixel electrode;

Hole injection layer forms operation, on the described pixel electrode of being divided by described insulating barrier, forms described hole injection layer according to the roughly the same mode of height of the upper surface of the height of the upper surface of described hole injection layer and described insulating barrier; With

Luminescent layer forms operation, forms luminescent layer on described insulating barrier and described pixel electrode whole.

11. the manufacture method of light-emitting device according to claim 10 is characterized in that,

Form in the operation at described insulating barrier,

After the material that uses silicon nitride comprising and carbon forms described insulating barrier,

In the atmosphere of fluorine based compound gas, described insulating barrier is implemented plasma treatment.

12. the manufacture method of light-emitting device according to claim 10 is characterized in that,

Form in the operation at described insulating barrier,

After having formed described insulating barrier by silica or silicon nitride or titanium oxide,

It is that coupling is handled that described surface of insulating layer is implemented silane.

13. the manufacture method according to any described light-emitting device in the claim 10～12 is characterized in that,

Form in the operation at described hole injection layer, form described hole injection layer by drop ejection method,

Form in the operation at described luminescent layer, form described luminescent layer by liquid phase method.

14. the manufacture method of a light-emitting device, described light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

This manufacture method has:

First next door forms operation, between adjacent described pixel electrode, to divide described pixel electrode and to overlook the mode that overlaps down, first next door that formation has lyophobicity with respect to the hole injection layer material with the marginal portion of described pixel electrode;

Second next door forms operation, forms second next door in the mode of dividing described pixel electrode on described first next door;

Hole injection layer forms operation, on by the described pixel electrode of described first next door and the division of described second next door, the roughly the same mode of height according to the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode forms described hole injection layer; With

Luminescent layer forms operation, forms luminescent layer on whole of the described hole injection layer of being divided by described first next door and described second next door.

15. the manufacture method of light-emitting device according to claim 14 is characterized in that,

Form in the operation in described first next door, use the material of silicon nitride comprising and carbon to form first next door, after described second next door forms operation, in the atmosphere of fluorine based compound gas, plasma treatment is carried out in described first next door, come that lyophoby is implemented in described first next door and handle.

16. the manufacture method of light-emitting device according to claim 14 is characterized in that,

Form in the operation in described first next door, form described first next door by silica, silicon nitride or titanium oxide after,

Implementing silane after described second next door forms operation is that coupling is handled, and lyophoby is implemented on surface, described first next door handled.

The manufacture method of 17 light-emitting devices according to claim 14 is characterized in that,

After described second next door forms, in the atmosphere of fluorine based compound gas, carry out plasma treatment, lyophoby is implemented in described second next door handled.

18. the manufacture method according to any described light-emitting device in the claim 14～17 is characterized in that,

Form in the operation at described hole injection layer, form described hole injection layer, form in the operation, form described luminescent layer by drop ejection method at described luminescent layer by drop ejection method.

19. the manufacture method of a light-emitting device, described light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

This manufacture method has:

First next door forms operation, between adjacent described pixel electrode, to divide described pixel electrode and to form first next door with the marginal portion of described pixel electrode overlooking the mode that overlaps down;

Second next door forms operation, forms second next door in the mode of dividing described pixel electrode on described first next door;

Hole injection layer forms operation, forms described hole injection layer on by the described pixel electrode of described first next door and the division of described second next door; With

Luminescent layer forms operation, forms described luminescent layer on by the described hole injection layer of described first next door and the division of described second next door,

Form in the operation in described second next door, from described substrate-side with first organic matter layer, wall part insulating barrier and the second organic matter layer stacked above one another on described first next door, be patterned as the regulation shape and form described second next door.

20. the manufacture method of light-emitting device according to claim 19 is characterized in that,

After forming described second next door, by the plasma treatment of oxygen and fluorine based compound gas, give hydrophily to described wall part surface of insulating layer, give lyophobicity to described first organic matter layer and second organic matter layer.

21. the manufacture method of a light-emitting device, described light-emitting device possesses on substrate: pixel electrode; With the opposed negative electrode of described pixel electrode; Between described pixel electrode and described negative electrode, begin stacked hole injection layer and luminescent layer from described substrate-side,

This manufacture method has:

First next door forms operation, between adjacent described pixel electrode, to divide described pixel electrode and to form first next door with the marginal portion of described pixel electrode overlooking the mode that overlaps down;

Second next door forms operation, forms second next door in the mode of dividing described pixel electrode on described first next door;

Hole injection layer forms operation, forms described hole injection layer on by the described pixel electrode of described first next door and the division of described second next door; With

Luminescent layer forms operation, forms luminescent layer on by the described hole injection layer of described first next door and the division of described second next door,

Form in the operation in described second next door, at least a portion of the side in described second next door, form bend.

22. the manufacture method of light-emitting device according to claim 21 is characterized in that, formed described second next door by organic substance after, by the plasma treatment of oxygen and fluorine based compound gas, gives lyophobicity to described organic matter layer.

23. the manufacture method according to any described light-emitting device in the claim 19～22 is characterized in that,

Form in the operation in described first next door, use the material of silicon nitride comprising and carbon to form described first next door,

After in described second next door formation operation, having formed described second next door, utilize fluorine based compound gas that plasma treatment is implemented in described first next door, come to give lyophobicity described first next door,

Form in the operation at described hole injection layer, on the described pixel electrode of being divided by described first next door, the roughly the same mode of height according to the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode forms described hole injection layer.

24. the manufacture method according to any described light-emitting device in the claim 19～22 is characterized in that,

Form in the operation in described first next door, form described first next door by silica or titanium oxide,

Formed described second next door in described second next door formation operation after, it is that coupling is handled that silane is implemented in described first next door, come to give lyophobicity to described first next door,

Form in the operation at described hole injection layer, on the described pixel electrode of being divided by described first next door, the roughly the same mode of height according to the upper surface in described first next door on the height of the upper surface of described hole injection layer and the marginal portion that is arranged on described pixel electrode forms described hole injection layer.

25. the manufacture method according to any described light-emitting device in the claim 19～24 is characterized in that,

Form in the operation at described hole injection layer, form described hole injection layer, form in the operation, form described luminescent layer by drop ejection method at described luminescent layer by drop ejection method.

26. an electronic equipment possesses any described light-emitting device in the claim 1～8.

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