CN101009312A - Organic light emitting display device and manufacturing therefor - Google Patents
Organic light emitting display device and manufacturing therefor Download PDFInfo
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- CN101009312A CN101009312A CNA2007100043859A CN200710004385A CN101009312A CN 101009312 A CN101009312 A CN 101009312A CN A2007100043859 A CNA2007100043859 A CN A2007100043859A CN 200710004385 A CN200710004385 A CN 200710004385A CN 101009312 A CN101009312 A CN 101009312A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/0355—Selective modification
- H01L2224/03552—Selective modification using a laser or a focussed ion beam [FIB]
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Abstract
Disclosed is a manufacturing method of an organic light emitting display device, which allows a frit to be sufficiently fused by illuminating a laser beam such that a width of the laser beam may be above a width of the frit by adjusting power of the laser beam. The manufacturing method of an organic light emitting display device comprises the steps of: a) forming an organic light emitting element comprising a first electrode, an organic thin film and a second electrode on a pixel region of a first substrate divided into the pixel region and a non-pixel region; b) forming a flit along a surrounding of a second substrate corresponding to the non-pixel region; c) arranging the second substrate on an upper side of the first substrate to be superposed to a part of the pixel region and the non-pixel region; and d) attaching the first substrate and the second substrate by illuminating laser beam with a width above a width of the frit from a back surface of the second substrate.
Description
Technical field
The present invention relates to a kind of method of making organic light-emitting display device, more particularly, relate to the encapsulating organic light emitting display unit.
Background technology
Usually, organic light emitting display (OLED) device comprises substrate with pixel region and non-pixel region, with this substrate positioned opposite and invest another substrate of this substrate, and is used for its sealant of sealing (for example epoxy resin).
The pixel region of substrate is included in a plurality of light-emitting components of the matrix form between scan line and the data wire.Light-emitting component can comprise anode, negative electrode and the organic thin film layer that forms between anode and negative electrode.Organic thin film layer can comprise hole transmission layer, organic luminous layer and electron transfer layer.
Because above-mentioned light-emitting component contains organic material, so light-emitting component is subject to the influence of hydrogen and oxygen.In addition, because negative electrode made by metal material,, cause electrical characteristics and characteristics of luminescence deterioration thus so negative electrode is easy to oxidizedly because of airborne moisture.In order to prevent top problem, OLED can have powder-type hygroscopic agent or membranous type hygroscopic agent in container (with the form manufacturing of metal material jar or cup) or substrate (being made by glass, plastics etc.), to remove moisture, oxygen and the hydrogen from external penetration.
Yet the method for coating powders type hygroscopic agent needs complicated technology, and has increased the cost that is used for its material and technology.In addition, this method has increased the thickness of display unit, and is difficult to be applied to the top-emission light emitting-type.In addition, the method that adheres to the membranous type hygroscopic agent is limited in one's ability for removing all moistures, and durability and reliability are low, therefore are difficult to be applied to produce in batches.
The method that has proposed to seal by the sidewall that formation has a frit light-emitting component overcomes the problems referred to above.PCT/KR2002/000994 international patent application (on May 24th, 2002) discloses a kind of overall containment and manufacture method thereof that adopts glass dust to be formed with sidewall.The open communique (September 6 calendar year 2001) of 2001-0084380 Korean Patent discloses a kind of frit frame encapsulating method that utilizes laser.The open communique (on June 28th, 2002) of 2002-0051153 Korean Patent discloses a kind of method for packing that utilizes laser to seal substrate and following substrate with glass frit layers.
Adopting frit to seal in the method for light-emitting component, the substrate of sealing that is coated with frit is invested another substrate with light-emitting component, and with laser beam irradiation to the rear surface of sealing substrate, make frit fusing and investing in the substrate.
Because passing, laser seals substrate and frit arrival substrate, so the temperature of substrate remains below the temperature of sealing substrate.For example, when laser radiation, the temperature of sealing substrate is increased to about 1000 ℃, and the temperature of substrate only is increased to about 600 ℃.Thus, frit does not melt fully and will invest substrate.Interfacial adhesion intensity between frit and the substrate can die down, and therefore, even when display unit is applied slight bump, perhaps to substrate or seal substrate when applying power, display unit also is easy to separate.
Utilizing laser that frit is sticked in the suprabasil method, laser radiation is to frit.Yet in this method, laser beam concentrates on the mid portion of frit width, thereby a little less than the power of laser on the frit edge, this can cause the incomplete curing of frit.The discussion of this part is for the background information of correlation technique being provided, not constituting the statement to prior art.
Summary of the invention
An aspect of of the present present invention provides a kind of organic light-emitting display device.This device comprises: first substrate; Second substrate; The array of organic light emission pixel places between described first substrate and described second substrate; Glass frit seal places between described first substrate and described second substrate, surrounds described array simultaneously, wherein, described glass frit seal, described first substrate and described second substrate in conjunction with and surround described array; Wherein, first cross section of described glass frit seal does not comprise two or more mutually different parts, and wherein, described first cross section is to intercept in the plane vertical with first extension of described glass frit seal.
Described first cross section everywhere can be on color homogeneous substantially.Described first cross section everywhere can be on pattern homogeneous substantially.Can be by form the described glass frit seal that comprises described first cross section to frit-sealed material effects laser beam, described frit-sealed material forms with the shape of the glass frit seal between described first substrate and described second substrate substantially, and described laser beam can act on described first cross section described frit-sealed material substantially everywhere.The described laser beam that acts on described frit-sealed material can be wideer than described first cross section.The width of described laser beam can be than the width in described first cross section larger about 0.6mm to about 1.5mm.
Can intercept second cross section in the plane vertical with second extension of described glass frit seal, described second cross section can comprise mutually different two parts at least.Described two parts at least can be different on its darkness or on the color.Described two parts at least in described second cross section can comprise first, second portion and third part, described second portion is built between described first and the described third part in described second cross section, and described second portion is different from described first and described third part.Described second portion can comprise about 50% to about 80% of the described second cross section gross area.
Described glass frit seal can comprise a plurality of prolongations, and each prolongation contacts with another prolongation that extends in different directions at the one end, and first prolongation of described prolongation is homogeneous substantially everywhere.Described glass frit seal can be at the basic everywhere homogeneous of described a plurality of prolongations.
Another aspect of the present invention provides a kind of method of making organic light-emitting display device.Said method comprising the steps of: middle device is provided, described middle device comprise first substrate, the single or multiple lift of single or multiple lift second substrate, place the array of the organic light emission pixel between described first substrate and described second substrate, and frit, described frit places between described first substrate and described second substrate, surround described array simultaneously, make described frit, described first substrate and described second substrate in conjunction with and surround described array; To described frit effect laser beam, so that described frit is bonded to described first substrate and described second substrate, wherein, after the described laser beam of effect, the cross section of described frit does not comprise two or more mutually different parts, wherein, described cross section is to intercept in the plane vertical with the prolongation of described frit.
Described cross section everywhere can be at homogeneous substantially on the color or on the darkness.Described cross section everywhere can be on pattern homogeneous substantially.Described laser beam can act on described frit everywhere in described cross section substantially.The comparable described cross section of described laser beam that acts on described frit is wide.The width in the comparable described cross section of width of described laser beam is larger about the extremely about 1.5mm of 0.6mm.The step of described effect laser beam can comprise along first prolongation of described frit and moves described laser beam with about 10mm/sec to the about speed of 40mm/sec.
Described middle device also can comprise: a plurality of other array of organic light emitting pixels place between described first substrate and described second substrate; A plurality of other frits, place between described first substrate and described second substrate, in the described other frit each surrounded one of described other array, wherein, described method also comprises each the effect laser beam in described other frit, so that described frit is bonded to described first substrate and described second substrate.Described method can comprise that also the product that will obtain is cut into polylith, every array and described frit that comprises the cutting part of the cutting part of described first substrate, described second substrate, described organic light emission pixel.
Another aspect of the present invention provides a kind of method of making organic light-emitting display device, this method can fully melt frit by power and the illuminating laser beam of adjusting laser beam, wherein, the mode of the power of adjustment laser beam is the width of the width of laser beam greater than frit.
Another aspect of the present invention provides a kind of organic light-emitting display device and a kind of method of making this device, this device can fully melt frit by adjusting laser beam and illuminating laser beam, wherein, adjust the mode of laser beam for forming the solid line of predetermined percentage width with frit.
Another aspect of the present invention provides a kind of organic light-emitting display device and a kind of method of making this device, and this device can improve the bonding strength between frit and the substrate.The manufacture method of this organic light-emitting display device may further comprise the steps: form the organic illuminating element that comprises first electrode, organic film and second electrode on the described pixel region of first substrate that is divided into pixel region and non-pixel region; Along second substrate corresponding to forming frit around the described non-pixel region; Described second substrate is arranged on described first substrate top, so that described second substrate is stacked on described pixel region and the described non-pixel region of part; By greater than the laser beam irradiation of described frit width described first substrate and described second substrate being adhered to from the rear surface of described second substrate with width.
Another aspect of the present invention provides a kind of organic light-emitting display device, and this device comprises: first substrate, be divided into pixel region and non-pixel region, and described pixel region is formed with the organic illuminating element that comprises first electrode, organic thin film layer and second electrode; Second substrate is arranged corresponding to the described pixel region and the described non-pixel region of part of described first substrate; Frit, along described non-pixel region between described first substrate and described second substrate around be formed with predetermined width, wherein, make described frit be formed with solid line by illuminating laser beam, described solid line has predetermined percentage with respect to the preset width of described frit.
Another aspect of the present invention provides a kind of method of making organic light-emitting display device, and this method may further comprise the steps: form the organic illuminating element that comprises first electrode, organic film and second electrode on the described pixel region of first substrate that is divided into pixel region and non-pixel region; Along second substrate corresponding to forming frit around the described non-pixel region; Described second substrate is arranged on described first substrate top, so that described second substrate is stacked on described pixel region and the described non-pixel region of part; By rear surface illuminating laser beam, make to form to have the solid line of described frit predetermined percentage width, and described first substrate and described second substrate are adhered to from described second substrate.
Description of drawings
In conjunction with the drawings to the following description of embodiment, these and/or other purpose of the present invention and advantage will become clear and be easier to and understand, in the accompanying drawings:
Figure 1A, Fig. 2 A and Fig. 3 A show the schematic top plan view according to the manufacture method of the organic light-emitting display device of first embodiment.
Figure 1B, Fig. 2 B and Fig. 3 B show the schematic cross sectional views according to the manufacture method of the organic light-emitting display device of first embodiment.
Fig. 4 A and Fig. 4 B show the view of embodiment that width adjustment with laser beam becomes the width of frit.
Fig. 5 A and Fig. 5 B show the width of adjusting laser beam makes solid line be formed with the view of another embodiment of the frit width of being scheduled to ratio.
Fig. 6 A to Fig. 6 C shows according to the frit width of embodiment and laser beam width.
Fig. 7 A is the schematic exploded view according to the passive matrix organic light-emitting display device of an embodiment.
Fig. 7 B is the schematic exploded view according to the active matrix type organic light emitting display unit of an embodiment.
Fig. 7 C is the schematic top plan view according to the organic light emitting display of an embodiment.
Fig. 7 D is the cutaway view of the organic light emitting display in Fig. 7 C of d-d line intercepting.
Fig. 7 E shows the perspective schematic view according to the batch process of the organic light-emitting display device of an embodiment.
Embodiment
Hereinafter, in more detailed mode embodiments of the invention are described with reference to the accompanying drawings.Should be appreciated that, will provide following examples for enabling those skilled in the art to fully understand the present invention, and the present invention is not limited to this, and can carries out various changes.
Organic light emitting display (OLED) is a kind of display unit that includes the array of OLED.Organic Light Emitting Diode is the solid state device that comprises organic material, and when applying suitable electromotive force, Organic Light Emitting Diode is suitable for producing and emission light.
According to the layout of the exciting current that is provided, OLED can be divided into two kinds of fundamental types usually.Fig. 7 A schematically shows the decomposition view of the simplified structure of passive matrix OLED 1000.Fig. 7 B schematically shows the simplified structure of active array type OLED 1001.In these two kinds of structures, OLED1000,1001 comprises the OLED pixel that is positioned at substrate 1002 tops, and the OLED pixel comprises anode 1004, negative electrode 1006 and organic layer 1010.When antianode 1004 applies suitable electric current, the electric current pixel of flowing through, thereby from the organic layer visible emitting.
With reference to Fig. 7 A, passive matrix OLED (PMOLED) design comprises the prolongation band of cardinal principle perpendicular to the anode 1004 of the prolongation band layout of negative electrode 1006, and the organic layer between anode and cathode.The intersection of the band of the band of negative electrode 1006 and anode 1004 limits single OLED pixel, at single OLED pixel place, produces light and launches light by band and the bringing of negative electrode 1006 that suitably excites corresponding anode 1004.The advantage that PMOLED provides be make simple relatively.
With reference to Fig. 7 B, active matrix OLED (AMOLED) comprises the drive circuit 1012 between the array that is arranged in substrate 1002 and OLED pixel.Between common cathode 1006 and anode 1004 (and other anode electric insulation), limit the single pixel of AMOLED.Each local drive circuits 1012 is connected with the anode 1004 of OLED pixel, also is connected with scan line 1018 with data wire 1016.In an embodiment, scan line 1018 provides the selection signal of the row of selecting drive circuit, and data wire 1016 is provided for the data-signal of specific drive circuit.Data-signal and sweep signal excitation local drive circuits 1012, excitation anode 1004 thus, thereby luminous from the pixel of their correspondences.
In the AMOLED that illustrates, local drive circuits 1012, data wire 1016 and scan line 1018 are embedded in the planarization layer 1014 that places between pel array and the substrate 1002.Planarization layer 1014 provides smooth top surface, and array of organic light emitting pixels is formed on this top surface.Planarization layer 1014 can be formed by the organic or inorganic material, though the planarization layer 1014 that illustrates is individual layer, planarization layer can be formed by two-layer or more layer.Local drive circuits 1012 is formed with thin-film transistor (TFT) usually, and presses grid or arranged in arrays below the OLED pel array.Local drive circuits 1012 can be made by organic material at least in part, comprises organic tft.AMOLED has fast advantage of response time, and the response time has been improved the expectation that they is used for the display data signal aspect fast.In addition, AMOLED has the low in energy consumption advantage of power consumption than passive matrix OLED.
With reference to the common trait of PMOLED and AMOLED design, substrate 1002 provides the support structure to OLED pixel and circuit.In various embodiments, substrate 1002 can comprise rigid material or flexible material and opaque material or transparent material, for example plastics, glass and/or paper tinsel.As noted above, each OLED pixel or diode are formed with anode 1004, negative electrode 1006 and place organic layer 1010 between the anode and cathode.When antianode 1004 applied suitable electric current, negative electrode 1006 injected electronics, anode 1004 injected holes.In certain embodiments, anode 1004 and negative electrode 1006 out of position, that is, negative electrode is formed in the substrate 1002, and anode and negative electrode are relatively arranged.
Place between negative electrode 1006 and the anode 1004 is one or more layers organic layer.More particularly, one deck emission layer or luminescent layer place between negative electrode 1006 and the anode 1004 at least.Luminescent layer can comprise one or more organic light emission compounds.Usually, luminescent layer is constructed to launch solid color such as blue, green, red or white visible light.In the illustrated embodiment, one deck organic layer 1010 is formed between negative electrode 1006 and the anode 1004, and as luminescent layer.The other layer that can be formed between anode 1004 and the negative electrode 1006 can comprise hole transmission layer, hole injection layer, electron transfer layer and electron injecting layer.
Hole transmission layer and/or hole injection layer can place between luminescent layer 1010 and the anode 1004.Electron transfer layer and/or electron injecting layer can place between negative electrode 1006 and the luminescent layer 1010.Electron injecting layer helps to inject electronics from negative electrode 1006 to luminescent layer 1010 by reducing to inject from negative electrode 1006 work function (work function) of electronics.Similarly, hole injection layer helps from anode 1004 to luminescent layer 1010 injected holes.Hole transmission layer and electron transfer layer help moving of the charge carrier that injects to luminescent layer from each electrode.
In certain embodiments, individual layer can play the effect of electronics injection and electric transmission, perhaps can play the effect of hole injection and hole transport.In certain embodiments, there be not in these layers one or more layers.In certain embodiments, the mixing injection that helps charge carrier and/or one or more materials of transmission of one or more layers organic layer.Only having one deck organic layer to be formed among the embodiment between negative electrode and the anode, organic layer not only can comprise organic luminophor, helps the injection of charge carrier in this layer or the specific function material of transmission but also can include.
Develop multiple organic material and be used for these layers (comprising luminescent layer).In addition, develop multiple other organic material and be used for these layers.In certain embodiments, these organic materials can be the macromolecules that comprises oligomer and polymer.In certain embodiments, the organic material that is used for these layers can be relatively little molecule.Every layer the suitable material that the technical staff can select to be used for these layers according to the desired function and the used material of adjacent layer of each layer in specific design.
In operation, circuit provides suitable electromotive force between negative electrode 1006 and anode 1004.This makes electric current flow to negative electrode 1006 by the organic layer of centre from anode 1004.In one embodiment, negative electrode 1006 provides electronics to adjacent organic layer 1010.Anode 1004 is to organic layer 1010 injected holes.Hole and electronics are compound and produce the energy particle be called " exciton " in organic layer 1010.Exciton is with their luminous organic material of energy delivery in the organic layer 1010, and described energy is used for from the luminous organic material visible emitting.Produce and the spectral characteristic of the light of emission depends on the characteristic of the organic molecule in the organic layer and forms by OLED 1000,1001.The composition that can select one or more layers organic layer among those of ordinary skills is to be suitable for the needs of application-specific.
Also can classify to the OLED device according to light emission direction.In being called a type of " top-emission " type, the OLED device is by negative electrode or top electrodes 1006 luminous and display images.In these embodiments, negative electrode 1006 by with respect to visible transparent or at least the material of partially transparent make.In certain embodiments, for fear of any light that passes anode or bottom electrode 1004 of loss, anode can be by the material of visible light fundamental reflection is made.Second type OLED device is luminous by anode or bottom electrode 1004, and is called " bottom emission " type.In bottom emissive type OLED device, anode 1004 can by with respect to visible light at least the material of partially transparent make.Usually, in bottom emissive type OLED device, negative electrode 1006 is by the material of visible light fundamental reflection is made.The OLED device of the third type is luminous on both direction, and is for example luminous by anode 1004 and negative electrode 1006.According to light emission direction, substrate can be by visible transparent, material opaque or reflection are made.
In many examples, as shown in Fig. 7 C, comprise that the OLED pel array 1021 of a plurality of organic light emission pixels is arranged in the top of substrate 1002.In an embodiment, by the pixel conducting in the drive circuit (not shown) array of controls 1021 with end, and described a plurality of pixel display message or image on array 1021 as a whole.In certain embodiments, OLED pel array 1021 is arranged with respect to other assembly (for example driving and control electronic device), to limit viewing area and non-display area.In these embodiments, the viewing area is the zone that is formed with OLED pel array 1021 of basidigitale 1002.Non-display area is the remaining area of basidigitale 1002.In an embodiment, but non-display area inclusive disjunction/or power circuit.At least a portion that should be understood that control/components of drive circuit will be arranged in the viewing area.For example, in PMOLED, conductive component will extend in the viewing area, provide suitable electromotive force with anode and negative electrode.In AMOLED, the local drive circuits that is connected with drive circuit and data/scan line will extend in the viewing area, to drive and to control the single pixel of AMOLED.
A kind of to the OLED Design of device with make to consider it is that some organic material layer of OLED device can be because of being exposed to water, oxygen or other pernicious gas is damaged or accelerated deterioration.Therefore, all understand usually, seal or seal the OLED device, be exposed to moisture and oxygen or other pernicious gas that in manufacturing or operational environment, exists to stop it.Fig. 7 D schematically shows the cutaway view of the OLED device of sealing 1011 of layout with Fig. 7 C and the d-d line intercepting in Fig. 7 C.In this embodiment, the top board of flat or bottom substrate 1061 engage with seal 1071, and sealing part 1071 also engages with base plate or bottom substrate 1002, thereby surround or seal OLED pel array 1021.In other embodiments, one or more layers is formed on top board 1061 or the base plate 1002, and seal 1071 combines with bottom substrate 1002 or bottom substrate 1061 by this layer.In the illustrated embodiment, seal 1071 extends along the periphery of base plate 1002 or top board 1061 or OLED pel array 1021.
In an embodiment, seal 1071 is made by frit material, and this will be further discussed below.In various embodiments, top board 1061 and base plate 1002 comprise the material such as plastics, glass and/or metal forming, and these materials can provide obstacle to the path of oxygen and/or water, thereby protection OLED pel array 1021 avoids being exposed to these materials.In an embodiment, at least one material by substantially transparent in top board 1061 and the base plate 1002 forms.
In order to prolong the life-span of OLED device 1011, expect that usually seal 1071 and top board 1061 and base plate 1002 provide the sealing of impermeable substantially oxygen and water vapour, and the enclosure space 1081 of basic sealing is provided.In some applications, the seal 1071 of pointing out the frit material that combines with top board 1061 and base plate 1002 provided less than approximate every day 10
-3Cc/m
2Oxygen transmission rate and less than every day 10
-6G/m
2Permeability rate.Suppose that some oxygen and moisture can be penetrated in the enclosure space 1081, in certain embodiments, formation can absorb the material of oxygen and/or moisture in enclosure space 1081.
As shown in Fig. 7 D, seal 1071 has width W, this width be seal 1071 with the surperficial parallel direction of bottom substrate 1061 or bottom substrate 1002 on thickness.Width changes in an embodiment, and its scope is to about 3000 μ m, alternatively from about 500 μ m to about 1500 μ m from about 300 μ m.In addition, at the diverse location place of seal 1071, this width can be different.In certain embodiments, the width of seal 1071 can perhaps be formed on the position maximum of the layer on bottom substrate 1002 or the bottom substrate 1061 in the position maximum of one of seal 1071 contact bottom substrate 1002 and bottom substrate 1061 in seal 1071 contacts.Can be in the width minimum at seal 1071 another position component places of contact.Change width on the single cross section of seal 1071 is relevant with other design parameter with the cross sectional shape of seal 1071.
As shown in Fig. 7 D, seal 1071 has height H, this highly be seal 1071 with the direction of the Surface Vertical of bottom substrate 1061 or bottom substrate 1002 on thickness.Highly change in an embodiment, and its scope is to about 30 μ m, alternatively from about 10 μ m to about 15 μ m from about 2 μ m.Usually, the diverse location place at seal 1071 does not highly have obvious variation.Yet in certain embodiments, the height of seal 1071 can change at its diverse location place.
In the illustrated embodiment, seal 1071 has square-section substantially.Yet in other embodiments, seal 1071 can have other various cross sectional shapes, for example square sectional substantially, trapezoid cross section substantially, have the cross section of one or more round edge, perhaps required and other structure of expression by the application of appointment.In order to improve sealing, usually expectation increase seal 1071 and bottom substrate 1002 or bottom substrate 1061 or be formed on bottom substrate or bottom substrate on layer interfacial area that directly contacts.In certain embodiments, the shape of seal can be designed, thereby interfacial area can be increased.
Seal 1071 can closely arrange that in other embodiments, seal 1071 is spaced apart with OLED array 1021 with OLED array 1021.In a certain embodiment, seal 1071 comprises the linear segment substantially that links together with encirclement OLED array 1021.In a particular embodiment, this linear segment of seal 1071 can be parallel to each border extension of OLED array 1021 substantially.In another embodiment, each border of one or more linear segments of seal 1071 and OLED array 1021 is the non-parallel relation layout.In other embodiments, at least a portion of seal 1071 is extended with curve mode between top board 1061 and base plate 1002.
As noted above, in a particular embodiment, utilize to comprise the frit material of meticulous glass particle or to abbreviate " frit " as or " glass dust " forms seal 1071.The frit particle comprises one or more in the following material: magnesium oxide (MgO), calcium oxide (CaO), barium monoxide (BaO), lithia (Li
2O), sodium oxide molybdena (Na
2O), potassium oxide (K
2O), boron oxide (B
2O
3), vanadium oxide (V
2O
5), zinc oxide (ZnO), tellurium oxide (TeO
2), aluminium oxide (Al
2O
3), silicon dioxide (SiO
2), lead oxide (PbO), tin oxide (SnO), phosphorous oxide (P
2O
5), ruthenium-oxide (Ru
2O), rubidium oxide (Rb
2O), rhodium oxide (Rh
2O), iron oxide (Fe
2O
3), cupric oxide (CuO), titanium oxide (TiO
2), tungsten oxide (WO
3), bismuth oxide (Bi
2O
3), antimony oxide (Sb
2O
3), lead borate glass, phosphoric acid tin glass, vanadate glass and borosilicate etc.In an embodiment, the size of these particles in from about 5 μ m to the scope of about 10 μ m, still not only is confined to this alternatively in from about 2 μ m to the scope of about 30 μ m.These particles can and the same big with the bottom substrate 1061 and the distance between the bottom substrate 1002 of glass frit seal 1071 contact, perhaps be formed on these substrates on and distance between contact with glass frit seal 1071 any layer the same big.
The frit material that is used to form seal 1071 also can comprise one or more inserts or add material.Inserts can be provided or add material, with the overall thermal expansion characteristics of adjustment seal 1071 and/or to adjust 1071 pairs of absorption characteristics of selecting the incident radiation energy of frequency of seal.Inserts or interpolation material can comprise that also conversion product (inversion) and/or additional inserts are to adjust the thermal coefficient of expansion of frit.For example, inserts or interpolation material can comprise transition metal, for example chromium (Cr), iron (Fe), manganese (Mn), cobalt (Co), copper (Cu) and/or vanadium.Other material that is used for inserts or additive comprises ZnSiO
4, PbTiO
3, ZrO
2, eucryptite.
In an embodiment, be included as about 20wt% to the about glass particle of 90wt% as the frit material of dry basis, residue comprises inserts and/or additive.In certain embodiments, the frit paste comprises the inorganic material of organic material and the about 70-90wt% of about 10-30wt%.In certain embodiments, the frit paste comprises the inorganic material of organic material and the about 80wt% of about 20wt%.In certain embodiments, organic material can comprise the adhesive of about 0-30wt% and the solvent of about 70-100wt%.In certain embodiments, in organic material, approximately 10wt% is an adhesive, and approximately 90wt% is a solvent.In certain embodiments, inorganic material can comprise the inserts of the additive of about 0-10wt%, about 20-40wt% and the glass powder of about 50-80wt%.In certain embodiments, in inorganic material, approximately 0-5wt% is an additive, and approximately 25-30wt% is an inserts, and approximately 65-75wt% is a glass powder.
In forming the glass frit seal process, in doing frit material, add fluent material, stick with paste to form frit.Any have or do not have the organic or inorganic solvent of additive to can be used as fluent material.In an embodiment, solvent comprises one or more organic compounds.For example, applicable organic compound is ethyl cellulose, NC Nitroncellulose, hydroxypropyl cellulose, butyl carbitol acetate (butyl carbitolacetate), terpineol, butyl cellosolve (butyl cellusolve), acrylate compounds.Then, can on top board 1061 and/or base plate 1002, apply the frit that forms like this and stick with paste, to form the seal 1071 of definite shape.
In one exemplary embodiment, the shape of seal 1071 is stuck with paste by frit at first and is formed, and places between top board 1061 and the base plate 1002.In certain embodiments, can with seal 1071 precuring or be pre-sintered to top board 1061 and one of base plate 1002 on.Next with seal 1071 assembling top board 1061 and the base plates 1002 that place between top board and the base plate, optionally the part of heated sealant spare 1071 makes the frit material that forms seal 1071 melt at least in part.Then, seal 1071 is solidified again,, thereby stop the OLED pel array 1021 of sealing to be exposed to oxygen or water with the firm connection of formation between top board 1061 and base plate 1002.
In an embodiment, the selectivity of carrying out glass frit seal by the irradiation of light (for example laser or directional ir lamp) heats.As noted earlier, form seal 1071 frit material can with one or more additives or inserts (for example, the selected material that is used for improving to the absorption of irradiates light) combination with heating and the fusing that helps frit material, thereby forms seal 1071.
In certain embodiments, produce OLED device 1011 in batches.In the embodiment shown in Fig. 7 E, in common floor substrate 1101, form a plurality of independent OLED arrays 1021.In the illustrated embodiment, surround each OLED array 1021, to form seal 1071 by the frit that is shaped.In an embodiment, public bottom substrate (not shown) is arranged on common floor substrate 1101 and forms the top of structure thereon, thereby the frit paste of OLED array 1021 and shaping places between common floor substrate 1101 and the public bottom substrate.For example OLED array 1021 is sealed and sealed by previously described airtight technology for single OLED display unit.The product that obtains comprises a plurality of OLED devices that keep together owing to common floor substrate and public bottom substrate.Then, the product that obtains is cut into polylith, the OLED device 1011 of every pie graph 7D.In certain embodiments, single OLED device 1011 subsequently also will be through other encapsulation operation, with the sealing of further improvement by seal 1071 and bottom substrate 1061 and bottom substrate 1002 formation.
Figure 1A, Fig. 2 A and Fig. 3 A are the plane graphs that is used to illustrate according to the manufacture method of the organic light-emitting display device of first embodiment, and Figure 1B, Fig. 2 B and Fig. 3 B are their cutaway views.
With reference to Figure 1A and Figure 1B, substrate 200 comprises pixel region 210 and surrounds the non-pixel region 220 of pixel region 210.The pixel region 210 of substrate 200 can comprise a plurality of organic illuminating elements 100, and described a plurality of organic illuminating elements 100 are connected to each other with matrix form between scan line 104b and data wire 106c.The non-pixel region 220 of substrate 200 can comprise: i) scan line 104b and data wire 106c, and scan line 104b and the data wire 106c from pixel region 210 extends respectively; Ii) the power line (not shown) is used for organic illuminating element 100 power supplies; Iii) scanner driver 410 and data driver 420 be used to handle the signal from the outside by pad 104c and 106d, and the signal after will handling offer scan line 104b and data wire 106c.
Organic illuminating element 100 can comprise anode 108, negative electrode 111 and be formed on anode 108 and negative electrode 111 between organic thin film layer 110.Organic thin film layer 110 can comprise hole transmission layer, organic luminous layer and electron transfer layer, and can comprise hole injection layer and electron injecting layer.In addition, organic illuminating element 100 also can comprise the switching transistor of the operation that is used to control organic illuminating element 100 and be used to keep the capacitor of signal.
With reference to Figure 1B manufacturing process about organic illuminating element 100 is described in more detail below.At first, can on the pixel region 210 of substrate 200 and non-pixel region 220, form resilient coating 101.Resilient coating 101 is used for preventing because the damage to substrate 200 that causes of thermal conductance, and the ion that is used for isolating from substrate 200 spreads to the outside.Resilient coating 101 can form dielectric film (silicon oxide sio for example
2Film or silicon nitride SiN
xFilm).
Can above the resilient coating 101 of pixel region 210, form semiconductor layer 102 as active layer.Then, above the basic entire upper surface that comprises semiconductor layer 102 of pixel region 210, form gate insulating film 103.
Can form gate electrode 104a above gate insulating film 103, gate insulating film 103 is positioned at the top top of semiconductor layer 102.Pixel region 210 can comprise the scan line that is connected to gate electrode 104a.Non-pixel region 220 can comprise scan line 104b that extends and the pad 104c that is used for from the external source received signal from the scan line 104b of pixel region 210.Gate electrode 104a, scan line 104b and pad 104c can comprise the metal such as Mo, W, Ti, Al or their alloy, and can have the layer structure of piling up.
Can above the basic entire upper surface that comprises gate electrode 104a of pixel region 210, form interlayer dielectric 105.Can form contact hole, with predetermined portions by interlayer dielectric 105 and gate insulating film 103 exposed semiconductor layer 102.Source electrode 106a and drain electrode 106b form by contact hole and are connected to semiconductor layer 102.Pixel region 210 can comprise the data wire 106c that is connected to source electrode 106a and drain electrode 106b, and non-pixel region 220 can comprise data wire 106c that extends and the pad 106d that is used for from the external source received signal from the data wire 106c of pixel region 210.Source electrode 106a, drain electrode 106b, data wire 106c and pad 106d can comprise the metal such as Mo, W, Ti, Al or their alloy, and can form stacked structure.
Can above planarization layer 107, form pixel and limit film 109, make the part of anode 108 expose.Then, on exposed anode 108, form organic thin film layer 110.On pixel qualification film 109, be included in and form negative electrode 111 on the organic thin film layer 110.
With reference to Fig. 2 A and Fig. 2 B, provide and sealed substrate 300.The size of sealing substrate 300 enough covers pixel region 210 and to the non-pixel region 220 of small part.Seal substrate 300 and can comprise transparent material (for example glass).In another embodiment, seal substrate and can comprise silicon oxide sio
2
Frit 320 can be formed on to be sealed on the corresponding outer peripheral areas of non-pixel region substrate 300 and substrate 200 220.Frit 320 is used for sealing pixel region 210, to prevent gas or the moisture infiltration such as hydrogen and oxygen.Frit 320 forms part and the pixel region 210 that surrounds non-pixel region 220.Also (complementary) hygroscopic agent that replenishes can be added in the zone of being sealed by frit 320.
Term " frit " can refer to the powder-type glass material.In the context of this document, " frit " also can refer to the frit of pasty state, and this pasty state frit can comprise laser absorbent, organic bond, be used to inserts that reduces thermal coefficient of expansion etc.Selectively, " frit " can refer to by make frit stick with paste the seal that is solidified to form with laser beam or infrared ray.
At an embodiment, the glass dust of pasty state can comprise at least a in the transition metal.Can utilize silk screen printing or dispersion method with about 14 μ m to the height of about 50 μ m and approximately 0.6mm to the about width of 1.5mm frit is coated to and seals substrate.After this, but sintered frit, to remove its moisture or organic bond, curing glass material then.
With reference to Fig. 3 A and Fig. 3 B, be arranged in the top of the upper surface of substrate 200 with sealing substrate 300, organic illuminating element 100 is formed in the substrate 200, as shown in Figure 1A and Figure 1B.Sealing substrate 300 covering pixel regions 210 reaches to the non-pixel region 220 of small part.Can be by laser beam be shone frit 320 and makes frit 320 fusing invest substrate 200 from sealing substrate 300 tops.
Fig. 4 A and Fig. 4 B show cured substrate 200 and seal the view of an embodiment of the frit 320 between the substrate 300.In one embodiment, laser beam is adjusted into has width A or have diameter greater than the width B of frit.
With reference to Fig. 6 A, laser beam has width A on the cross section that illustrates, the direction that advance perpendicular to laser beam in this cross section and frit prolongs.In the context of this document, as shown in Fig. 6 A, the width of frit refers to the length of cross section on the direction of the width A of Laser Measurement bundle of frit.
As mentioned above, OLED comprises the frit 320 with the part of surrounding pixel region 210.With reference to Fig. 6 C, one of frit part is extended on the D direction.The cross section 320a of intercepting is basically perpendicular to direction D.The width of cross section 320a refers to be basically parallel to the width B of at least one extension in the substrate 200,300.In one embodiment, as shown in Fig. 6 A, the width B of frit 320 is identical everywhere at the whole cross section 320a of frit.In a particular embodiment, frit can have several different width.For example, in Fig. 6 B, frit 320 has the tapering part that penetrates into substrate 200 through planarization layer 107 downwards.Along with tapering part basad 200 extends, tapering part narrows down.In this embodiment, the width of frit refers to the longest width B, rather than refers to other width (as the shortest width C).
With reference to Fig. 4 A and Fig. 4 B, illuminating laser beam above sealing substrate.The laser beam that illustrates has width A.Frit can have width B, and this width B is less than the width A of laser beam.
In one embodiment, can be with the width adjustment of laser beam than the width of frit larger about 0.6mm to about 1.5mm.Laser beam can be adjusted into and have the power of about 36W to about 38W.Laser beam is moved, to keep constant fusion temperature and bonding strength with constant speed (for example, approximately 10mm/sec is 20mm/sec to about 40mm/sec alternatively) along frit 320.
In a particular embodiment, the laser beam width can be equal to or less than the frit width substantially.In such embodiments, laser beam is movable to the top, marginal portion of frit, so that the marginal portion is implemented to solidify.
In the above embodiments, because the width A that makes laser beam is adaptively greater than the width B of frit, thus also shine the zone that preset distance is arranged from the center of laser beam equably by laser beam, thereby can all finish curing up hill and dale to frit.
In one embodiment, design display device so promptly, does not make on the pattern (for example metal wire) of laser beam irradiation in the non-pixel region 220 of substrate 200.In this embodiment, this pattern can be arranged in the zone that is not exposed to laser beam.Selectively, as long as can stop pattern to be exposed to laser beam by the ad hoc structure in the zone, this pattern just can be positioned within the zone that is exposed to laser beam.
In the illustrated embodiment, the frit 320 of formation only seals pixel region 210.In another embodiment, frit can surround scanner driver 410 equally.In this embodiment, can need to change the size of sealing substrate 300.In addition, though described about at first, be not limited thereto at the embodiment that seals in the substrate 300 situation that forms frit 320.In other embodiments, can be at first in substrate 200, form frit 320, can be placed on the top of substrate 200 with sealing substrate 300 then.Though adopt laser to come melt frit 320 and make frit 320 invest substrate 200, also can use other light source (for example, infrared light).
Fig. 5 A and Fig. 5 B show the view of second embodiment, in a second embodiment, adjust the width of laser beam, and feasible predetermined ratio with the frit width forms solid line.Because can be with reference to first embodiment, so will omit detailed description to second embodiment at this.
With reference to Fig. 5 A and Fig. 5 B, by being the laser beam irradiation of A ' with width, first substrate 500 and second substrate 600 are attached to each other from second substrate, 600 tops, wherein, the width A ' of laser beam greater than the width B of frit '.
In one embodiment, can be that width B ' larger about 0.6mm than frit is to about 1.5mm with the width adjustment of laser beam.Laser beam can be adjusted into and have the power of about 36W to about 38W.Laser beam is moved, to keep constant fusion temperature and bonding strength with constant speed (for example, approximately 10mm/sec is 20mm/sec to about 40mm/sec alternatively) along frit 520.
When laser beam irradiation on frit 520 time, is determined to make the frit 520 basic width that solidify by the middle part of laser beam.That is, the middle part of curing glass material 520 makes solid line 521 be formed on the middle part of frit 520.
In one embodiment, the width C of the solid line 521 of frit 520 ' be about 50% to about 80% of frit width.Can adjust the width of laser beam from the power aspect, make the frit width B of the width C of solid line 521 ' have predetermined percentage '.
Therefore, as mentioned above, as can be seen, since the width A ' that makes laser beam adaptively greater than the width B of frit ', and the frit 520 by predetermined percentage forms solid line 521, so also can shine equably from the zone of the middle part of laser beam preset distance, thereby can all finish curing up hill and dale to frit by laser beam.
Though illustrated and described some embodiments of the present invention, but it should be appreciated by those skilled in the art, without departing from the principles and spirit of the present invention, can make amendment to this embodiment, scope of the present invention is limited in claim and the equivalent thereof.
Claims (22)
1, a kind of organic light-emitting display device comprises:
First substrate;
Second substrate;
The array of organic light emission pixel places between described first substrate and described second substrate;
Glass frit seal comprises a plurality of prolongations that place between described first substrate and described second substrate, and described a plurality of prolongations comprise first;
Wherein, described a plurality of prolongation in conjunction with and surround described array, wherein, described glass frit seal, described first substrate and described second substrate in conjunction with and surround described array, wherein, described glass frit seal is included in first cross section that intercepts in the plane vertical with the extension of described first;
Wherein, described glass frit seal respectively is on the color in described first cross section or homogeneous substantially on the pattern.
2, device as claimed in claim 1, wherein, described first cross section respectively is on the color homogeneous substantially.
3, device as claimed in claim 1, wherein, described first cross section respectively is on the pattern homogeneous substantially.
4, device as claimed in claim 1, wherein, by form the described glass frit seal that comprises described first cross section to frit-sealed material effects laser beam, described frit-sealed material forms with the shape of the glass frit seal between described first substrate and described second substrate substantially, wherein, described laser beam acts on described first cross section described frit-sealed material substantially everywhere.
5, device as claimed in claim 4, wherein, the described laser beam that acts on described frit-sealed material is wideer than described first cross section.
6, device as claimed in claim 5, wherein, the width of described laser beam than the width in described first cross section larger about 0.6mm to about 1.5mm.
7, device as claimed in claim 1, wherein, intercepting second cross section in the plane vertical with second extension of described glass frit seal, wherein, described second cross section comprises mutually different two parts at least.
8, device as claimed in claim 7, wherein, described two parts at least are different on its darkness or on the color.
9, device as claimed in claim 7, wherein, described two parts at least in described second cross section comprise first, second portion and third part, described second portion is built between described first and the described third part in described second cross section, and described second portion is different from described first and described third part.
10, device as claimed in claim 9, wherein, described second portion comprises about 50% to about 80% of the described second cross section gross area.
11, device as claimed in claim 1, wherein, described glass frit seal comprises a plurality of prolongations, and each prolongation contacts with another prolongation that extends in different directions at the one end, wherein, the basic everywhere homogeneous of first prolongation of described prolongation.
12, device as claimed in claim 11, wherein, described glass frit seal is at the basic everywhere homogeneous of described a plurality of prolongations.
13, device as claimed in claim 1, wherein, described glass frit seal comprises one or more materials that are selected from the group of being made up of following material: MgO, CaO, BaO, Li
2O, Na
2O, K
2O, B
2O
3, V
2O
5, ZnO, TeO
2, Al
2O
3, SiO
2, PbO, SnO, P
2O
5, Ru
2O, Rb
2O, Rh
2O, Fe
2O
3, CuO, TiO
2, WO
3, Bi
2O
3, Sb
2O
3, lead borate glass, phosphoric acid tin glass, vanadate glass and borosilicate.
14, a kind of method of making organic light-emitting display device said method comprising the steps of:
Middle device is provided, and described middle device comprises
First substrate is single or multiple lift,
Second substrate is single or multiple lift,
The array of organic light emission pixel places between described first substrate and described second substrate,
Frit places between described first substrate and described second substrate, surrounds described array simultaneously, make described frit, described first substrate and described second substrate in conjunction with and surround described array;
To described frit effect laser beam, so that described frit is bonded to described first substrate and described second substrate,
Wherein, after the described laser beam of effect, the cross section of described frit does not comprise two or more mutually different parts, and wherein, described cross section is to intercept in the plane vertical with the prolongation of described frit.
15, method as claimed in claim 14, wherein, described cross section respectively is on the color or homogeneous substantially on the darkness.
16, method as claimed in claim 14, wherein, described cross section respectively is on the pattern homogeneous substantially.
17, method as claimed in claim 14, wherein, described laser beam acts on described frit everywhere in described cross section substantially.
18, method as claimed in claim 17, wherein, the described laser beam that acts on described frit is wideer than described cross section.
19, method as claimed in claim 18, wherein, the width of described laser beam than the width in described cross section larger about 0.6mm to about 1.5mm.
20, method as claimed in claim 14, wherein, the step of described effect laser beam comprises along first prolongation of described frit and moves described laser beam with about 10mm/sec to the about speed of 40mm/sec.
21, method as claimed in claim 14, wherein, described middle device also comprises:
A plurality of other array of organic light emitting pixels place between described first substrate and described second substrate;
A plurality of other frits place between described first substrate and described second substrate, and each in the described other frit surrounded one of described other array,
Wherein, described method also comprises each the effect laser beam in described other frit, so that described frit is bonded to described first substrate and described second substrate.
22, method as claimed in claim 21 comprises that also the product that will obtain is cut into polylith, every array and described frit that comprises the cutting part of the cutting part of described first substrate, described second substrate, described organic light emission pixel.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060008462A KR100671642B1 (en) | 2006-01-26 | 2006-01-26 | Method of manufacturing organic light emitting display device |
| KR1020060008462 | 2006-01-26 | ||
| KR1020060016188 | 2006-02-20 |
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|---|---|
| CN101009312A true CN101009312A (en) | 2007-08-01 |
| CN100492655C CN100492655C (en) | 2009-05-27 |
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| CN (1) | CN100492655C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102185115A (en) * | 2010-01-07 | 2011-09-14 | 三星移动显示器株式会社 | Laser beam irradiation apparatus, substrate sealing method, and method of manufacturing organic light emitting display device |
| CN101952991B (en) * | 2007-11-30 | 2012-07-04 | 康宁股份有限公司 | Method and apparatus for packaging electronic components |
| CN101533807B (en) * | 2008-03-13 | 2013-01-16 | 三星显示有限公司 | Frit sealing system and method of manufacturing organic light emitting display device |
| CN105807502A (en) * | 2015-01-19 | 2016-07-27 | 三星显示有限公司 | Display device |
| CN108292711A (en) * | 2015-11-24 | 2018-07-17 | 康宁股份有限公司 | Sealing device shell and correlation technique with the low thickness laser welded parts that membrana granulosa causes |
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| KR101065417B1 (en) * | 2009-05-20 | 2011-09-16 | 삼성모바일디스플레이주식회사 | Light irradiation device and fabrication method for organic light emitting diode display device using the same |
| KR101189526B1 (en) | 2010-09-30 | 2012-10-11 | 주식회사 엘티에스 | Method for sealing wide frit using laser |
| DE102012109258B4 (en) | 2012-09-28 | 2020-02-06 | Osram Oled Gmbh | Optoelectronic component and method for producing an optoelectronic component |
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2007
- 2007-01-24 CN CNB2007100043859A patent/CN100492655C/en active Active
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| CN101952991B (en) * | 2007-11-30 | 2012-07-04 | 康宁股份有限公司 | Method and apparatus for packaging electronic components |
| CN101533807B (en) * | 2008-03-13 | 2013-01-16 | 三星显示有限公司 | Frit sealing system and method of manufacturing organic light emitting display device |
| CN102185115A (en) * | 2010-01-07 | 2011-09-14 | 三星移动显示器株式会社 | Laser beam irradiation apparatus, substrate sealing method, and method of manufacturing organic light emitting display device |
| CN104384709A (en) * | 2010-01-07 | 2015-03-04 | 三星显示有限公司 | Laser beam irradiation apparatus, substrate sealing method, and method of manufacturing organic light emitting display device |
| CN102185115B (en) * | 2010-01-07 | 2015-03-25 | 三星显示有限公司 | Laser beam irradiation apparatus, substrate sealing method, and method of manufacturing organic light emitting display device |
| CN104681748B (en) * | 2010-01-07 | 2017-05-31 | 三星显示有限公司 | The method of laser beam irradiation device, base plate seals and manufacture OLED |
| CN105807502A (en) * | 2015-01-19 | 2016-07-27 | 三星显示有限公司 | Display device |
| CN105807502B (en) * | 2015-01-19 | 2021-01-26 | 三星显示有限公司 | Display device |
| CN108292711A (en) * | 2015-11-24 | 2018-07-17 | 康宁股份有限公司 | Sealing device shell and correlation technique with the low thickness laser welded parts that membrana granulosa causes |
| US20210351372A1 (en) * | 2019-06-14 | 2021-11-11 | Boe Technology Group Co., Ltd. | Oled packaging structure and packaging method, and display apparatus |
| US11793018B2 (en) * | 2019-06-14 | 2023-10-17 | Boe Technology Group Co., Ltd. | OLED packaging structure and packaging method, and display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100671642B1 (en) | 2007-01-19 |
| CN100492655C (en) | 2009-05-27 |
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