CN101008104A - Melt liquid level position detecting method for CZ method monocrystalline silicon growth - Google Patents

Melt liquid level position detecting method for CZ method monocrystalline silicon growth Download PDF

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CN101008104A
CN101008104A CN 200610105332 CN200610105332A CN101008104A CN 101008104 A CN101008104 A CN 101008104A CN 200610105332 CN200610105332 CN 200610105332 CN 200610105332 A CN200610105332 A CN 200610105332A CN 101008104 A CN101008104 A CN 101008104A
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liquid level
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laser
laser beam
circle
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CN100436658C (en
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刘丁
任海鹏
赵跃
李琦
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Xi'an Xinhui Equipment Technology Co.,Ltd.
Xian Eswin Material Technology Co Ltd
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Xian University of Technology
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Abstract

The invention relates to a method for detecting flux liquid level position during single crystal silicon growth in vertical pulling method. It comprises following steps: collecting light spot image reflected from laser beam on flux liquid surface, extracting inage edge thorugh Sobel operator for collected image, getting central position image of laser light spot after Hough transformation and clustering, comparing this central point with counting position of photoelectric code disc, getting the liquid level height change value relative to the change of light spot central position, and then obtaining change value of liquid level position based on change of light spot center, averaging got results and getting more accurate liquid level position change value. The method is simple and measuring accuracy is high.

Description

Melt liquid level position detection method in the vertical pulling method monocrystalline silicon growing process
Technical field
The present invention relates to a kind of detection method of contactless high-temperature fusant liquid level position, be specifically related to the detection method of the melt liquid level position in a kind of vertical pulling method monocrystalline silicon growing process.
Background technology
In the Grown by CZ Method silicon single crystal technology, the process of growth of monocrystalline has proposed relatively stricter requirement with the growing environment that the subsurface defect that grows up to monocrystalline limits for monocrystalline.Along with the silicon single crystal solid is constantly lifted out from the silicon of molten state, melt liquid level in the crucible will descend, in the process that crystal lifts, there are a lot of uncertain factors, the precision of crystal pull rate and crucible lift velocity for example, the discordance of crystal diameter and crucible internal diameter, these factors have small fluctuation, at short notice, can not produce big liquid level deviation, but the process of growth of monocrystalline generally is to need more than 24 hours, the accumulation of the fluctuation that these are little can make liquid level position have greatly changed, and will influence crystalline growth control and crystal mass.Therefore, accurately measure the height of liquid level in the single crystal growing furnace, adjust the speed that crucible rises, make liquid surface height controlling be in the closed loop state, can obtain higher tank level control precision.
Because analyte is in molten state, temperature is very high, and therefore, non-contact measurement method is generally adopted in the detection of high-temperature fusant liquid level.Conventional high-temperature fusant liquid level checking method has: supersonic method, gamma-rays method, current vortex detection method, capacitance determining method.For vertical pulling method monocrystalline silicon growing equipment---single crystal growing furnace, because single crystal growing requires to carry out in a vacuum, current vortex and capacitance determining method are difficult to be applied to this equipment.The stove bucket of single crystal growing furnace will be installed big magnetic field means, gamma-rays can't be installed take place and receiving trap, and the reliability requirement height of entire equipment makes the gamma-rays method be difficult to be applied to the measurement of silicon melt level simultaneously.The equipment of ultrasonic wave measuring method is bigger, and the space is limited on the bell, and difficulty is installed.
Summary of the invention
The purpose of this invention is to provide the melt liquid level position detection method in a kind of vertical pulling method monocrystalline silicon growing process, be applicable in the Grown by CZ Method silicon single crystal technology detection for melt liquid level position.
The technical solution adopted in the present invention is, melt liquid level position detection method in the vertical pulling method monocrystalline silicon growing process, laser beam emitting device and area array CCD are installed on the single crystal growing furnace bell, the LASER Light Source emission laser beam shines melt liquid level along pre-designed light path, to laser facula on area array CCD the imaging of laser beam irradiation to the melt liquid level back reflection, this representation of laser facula is passed through Sobel operator extraction image border, again this edge image is carried out the central position image that Hough conversion and cluster obtain laser facula, the counting position of this central point and photoelectric code disk is compared, thereby corresponding liquid level changing value when obtaining the spot center change in location, specifically may further comprise the steps
A. cover angled laser transmitter and the area array CCD of being provided with at single crystal growing furnace, the position that makes laser transmitter emission laser beam incident liquid level and guarantees that laser beam can imaging on area array CCD by the liquid level light reflected between crystal edge and heat shielding; On the crucible lifting transmission rig, photoelectric code disk is set;
B. by laser transmitter emission laser beam, by the representation of laser facula after the reflection of area array CCD collection laser beam incident liquid level;
C. the representation of laser facula that area array CCD is collected obtains this hot spot edge through image pre-treatment and Sobel operator extraction;
D. above-mentioned hot spot edge image is obtained the central position of this laser facula through hough conversion and cluster;
E. calculate the variable quantity of liquid level position according to the spot center change in location;
F. the liquid level position variable quantity that calculates is averaged value filtering, the information of filtering interfering obtains the changing value of liquid level position.
Detection method of the present invention is applicable to Grown by CZ Method silicon single crystal technology, and measuring method is simple, and take off data is accurate.
Description of drawings
Fig. 1 is melt liquid level measuring principle figure of the present invention;
Fig. 2 is the image that collects by CCD;
Fig. 3 is through the image behind image binaryzation and the Sobel operator extraction edge;
Fig. 4 is the central position image that process Hough conversion and cluster obtain laser facula.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
Melt liquid level position detection method in the vertical pulling method monocrystalline silicon growing process of the present invention, laser beam emitting device (LASER Light Source) and CCD are installed on the single crystal growing furnace bell, the LASER Light Source emission laser beam shines melt liquid level along pre-designed light path, to laser facula on CCD the imaging of laser beam irradiation to the melt liquid level back reflection, this representation of laser facula is passed through Sobel operator extraction image border, again edge image is carried out the central position image that Hough conversion and cluster obtain laser facula, the counting position of this central point and photoelectric code disk is compared, thereby corresponding liquid level changing value when obtaining the spot center change in location, specifically may further comprise the steps
A. shown in Fig. 1 principle, cover design Laser emission window and ccd image receive window at single crystal growing furnace, window is circular, and diameter is respectively 8cm and 12cm, and window is installed gold-plated glass, and the mounting block of glass will carry out water-cooled.The whole single crystal growing furnace of line distance center 18cm between the center of circular window.The input angle of laser beam incident liquid level is about 23 degree, the horizontal throw at the whole body of heater of laser beam Strahlungseintritt distance center is greater than 160cm, less than corresponding heat shielding radius, the position of laser transmitter emission laser beam incident liquid level is between crystal edge and heat shielding.Above-mentioned installation site and light path design can guarantee that laser beam passes through liquid level reflected light path and lens combination imaging on CCD;
On the crucible lifting transmission rig, photoelectric code disk is installed, is measured the crucible absolute location.The lifting of crucible is to drive the roller bearing leading screw and rotate by electric motor, worm type of reduction gearing, one-level pulley decelerates, the lifting of control crucible.Be connected a photoelectric code disk with the roller bearing leading screw is coaxial, the corresponding 0.002 millimeter crucible displacement of each pulse of photoelectric code disk with absolute location function of measuring.
B. by laser transmitter emission laser beam, by the representation of laser facula after the reflection of area array CCD collection laser beam incident liquid level;
C. by area array CCD the representation of laser facula that collects is obtained this hot spot edge through pre-treatment and Sobel operator extraction.The image pre-treatment mainly is to take out interested part from image.Obtain image as shown in Figure 2 as CCD, select the hot spot zone of action, obtain zone as shown in Figure 3 as the picture processing zone.Utilization Sobel operator extraction image border in this zone.The concrete algorithm of Sobel operator is as follows
If pixel (x, gray-scale value y) be f (x, y) then the gradient calculation method of this pixel is as follows:
D x=[f(x+1,y-1)-f(x-1,y-1)]+2[f(x+1,y)-f(x-1,y)]+[f(x+1,y+1)-f(x-1,y+1)]
D y=[f(x-1,y+1)-f(x-1,y-1)]+2[f(x,y+1)-f(x-1,y-1)]+[f(x+1,y+1)-f(x+1,y-1)]
▿ f = D x 2 + D y 2
By setting Grads threshold image is carried out binaryzation after calculating the gradient information of image, concrete method be if the gradient information at certain pixel place greater than setting Grads threshold, this point measures greater than required value simultaneously, then the gray-scale value of this point puts 1, otherwise put 0, the marginal information that obtains hot spot by aforesaid method as shown in Figure 3.
D. because the image that collects on the area array CCD is a laser facula, laser facula is originally as round, because speckle and the uneven influence of object plane reflection characteristic, the detection laser hot spot is generally the irregular figure near circle, above-mentioned hot spot edge image is obtained the central position of this laser facula through Hough conversion and cluster.
Concrete grammar is as follows:
Through behind the edge extracting, image has become bianry image, suppose image pixel number for (m, n), following treating processes is only at the image border after the binaryzation, the coordinate of establishing the image border be (x, y).The effect of Hough conversion is with (x, y) (r), wherein a is the X-coordinate in the center of circle in the parameter space to plane transformation for a, b, and b is the ordinate zou in the center of circle in the parameter space, and r is a radius of a circle, and its transformation for mula is to parameter space
a=x-r*cos(angle),b=y-r*sin(angle)
Wherein angle is that (a is b) with (x, the angle of line y) and x coordinate positive dirction for central coordinate of circle.
According to the empirical value of spot size, determine the search coverage r_min and the r_max of a spot radius size, the angle searching scope is (0,2 π), for any one marginal point and all diameter ranges, calculate a and b according to formula, if a that calculates and b are in image, be a<m, b<n then gives counting array hough_space (a, b simultaneously, ri) add 1, wherein ri is that the diameter of corresponding diameter r is cut apart array index.Obtain the array that a m * n * rn ties up for all diameters in all marginal points and the search coverage, wherein rn is the branch progression of radius search volume.Seek the maximum value among the array hough_space, subscript value greater than all elements correspondence of maximum setting threshold p on duty (0<p<1) among the array hough_space is exactly that many points are concentrated in the center of circle, the central coordinate of circle of general these points and the variance ratio of radius are less, get the center of the average of these central coordinate of circle as actual hot spot.
Said process is actually each marginal point, cuts apart according to transformation equation and corresponding diameter, calculates rational central coordinate of circle (being positioned at image inside), will calculate the coordinate of center of circle cluster point then, as real spot center position.
E. when liquid level changed, the central position of laser facula also changed, and calculated the pixel count of variation, and this pixel count is directly proportional with the variable quantity of liquid level position, the liquid level position variable quantity
Ls i = K ( x 1 - x 0 ) 2 + ( y 1 - y 0 ) 2
(x wherein 0, y 0) and (x 1, y 1) be respectively liquid level position change before and after the coordinate of picture centre position, K is a scale-up factor, the position that this coefficient can be by the photoelectric code disk counting and change before and after the distance of spot center obtain.
F. in actual moving process, owing to the rotation of crucible and rolling of fusion liquid level, when liquid level position is constant, the position at laser facula center may change, therefore, carry out the running mean value filtering to the liquid level position variable quantity that obtains in the previous step, according to following formula:
ΔLs = Σ i = 1 N L s i
The mean value that liquid level position changes can be used for carrying out further tank level control.
The counting position of this pixel count and photoelectric code disk is compared, thereby the liquid level of correspondence changes when obtaining the spot center change in location.
Embodiment
Adopt the 650nm semiconductor laser as LASER Light Source, adopt area array CCD as receiving trap.
The image that collects by CCD obtains as shown in Figure 3 through image pre-treatment and Sobel operator extraction edge as shown in Figure 2.In the central position that obtains laser facula through hough conversion and cluster as shown in Figure 4.
At first demarcate transformation coeffcient K, concrete grammar is as follows: the centre coordinate of laser facula is (120 when establishing liquid level position and being starting position, 80), after liquid level rose, the laser facula central position became (120,90), at this moment, the counting indication of photoelectric code disk, liquid level rising 1mm, COEFFICIENT K=0.1 in the then top formula.
After demarcating,, then can obtain the liquid level position variable quantity if picture centre changes to new location (120,65) by starting position (120,80)
Ls 1 = K ( x 1 - x 0 ) 2 + ( y 1 - y 0 ) 2 = 0.1 ( 120 - 120 ) 2 + ( 80 - 65 ) 2 = 1.5 mm
Changing to average and just can obtain liquid level position variation more accurately by repeatedly calculating liquid level position.

Claims (4)

1. the melt liquid level position detection method in the vertical pulling method monocrystalline silicon growing process, laser beam emitting device and area array CCD are installed on the single crystal growing furnace bell, the LASER Light Source emission laser beam shines melt liquid level along pre-designed light path, to laser facula on area array CCD the imaging of laser beam irradiation to the melt liquid level back reflection, this representation of laser facula is passed through Sobel operator extraction image border, again this edge image is carried out the central position image that Hough conversion and cluster obtain laser facula, the counting position of this central point and photoelectric code disk is compared, thereby corresponding liquid level changing value when obtaining the spot center change in location, it is characterized in that, specifically may further comprise the steps
A. cover angled laser transmitter and the area array CCD of being provided with at single crystal growing furnace, the position that makes laser transmitter emission laser beam incident liquid level and guarantees that laser beam can imaging on area array CCD by the liquid level light reflected between crystal edge and heat shielding; On the crucible lifting transmission rig, photoelectric code disk is set;
B. by laser transmitter emission laser beam, by the representation of laser facula after the reflection of area array CCD collection laser beam incident liquid level;
C. the representation of laser facula that area array CCD is collected obtains this hot spot edge through image pre-treatment and Sobel operator extraction;
D. above-mentioned hot spot edge image is obtained the central position of this laser facula through hough conversion and cluster;
E. calculate the variable quantity of liquid level position according to the spot center change in location;
F. the liquid level position variable quantity that calculates is averaged value filtering, the information of filtering interfering obtains the changing value of liquid level position.
2. according to the described detection method of claim 1, it is characterized in that described representation of laser facula is carried out image pre-treatment and Sobel operator extraction hot spot edge is to adopt following steps:
If pixel (x, gray-scale value y) be f (x, y) then the gradient calculation method of this pixel is as follows:
D x=[f(x+1,y-1)-f(x-1,y-1)]+2[f(x+1,y)-f(x-1,y)]+[f(x+1,y+1)-f(x-1,y+1)]
D y=[f(x-1,y+1)-f(x-1,y-1)]+2[f(x,y+1)-f(x-1,y-1)]+[f(x+1,y+1)-f(x+1,y-1)]
▿ f = D x 2 + D y 2
By setting Grads threshold image is carried out binaryzation after calculating the gradient information of image, concrete method be if the gradient information at certain pixel place greater than setting Grads threshold, measuring greater than required value of this point simultaneously, then the gray-scale value of this point puts 1, otherwise puts 0.
3. according to the described detection method of claim 1, it is characterized in that, described is to adopt following steps to the hot spot edge image through the central position that hough conversion and cluster obtain this laser facula: through the image behind the edge extracting is bianry image, suppose that image pixel number is (m, n), if the coordinate of image border is (x, y), the effect of Hough conversion be with (x, y) plane transformation is to parameter space (a, b, r), wherein a is the X-coordinate in the center of circle in the parameter space, and b is the ordinate zou in the center of circle in the parameter space, r is a radius of a circle, and its transformation for mula is
a=x-r*cos(angle),b=y-r*sin(angle)
Wherein angle is that (a is b) with (x, the angle of line y) and x coordinate positive dirction for central coordinate of circle;
Empirical value according to spot size, determine the search coverage r_min and the r_max of a spot radius size, the angle searching scope is (0,2 π), for any one marginal point and all diameter ranges, calculate a and b according to formula, if a that calculates and b are in image, be a<m, simultaneously, b<n then gives counting array hough_space (a, b, ri) add 1, wherein ri is that the diameter of corresponding diameter r is cut apart array index, obtains the array of a m * n * rn dimension for all diameters in all marginal points and the search coverage, and wherein rn is the branch progression of radius search volume, seek the maximum value among the array hough_space, subscript value greater than all elements correspondence of maximum setting threshold p on duty (0<p<1) among the array hough_space is exactly that many points are concentrated in the center of circle, and generally the variance ratio of the central coordinate of circle of these points and radius is less, gets the center of the average of these central coordinate of circle as actual hot spot.
4. according to the described detection method of claim 1, it is characterized in that calculating the liquid level position variable quantity according to the central position of laser facula is basis:
Ls i = K ( x 1 - x 0 ) 2 + ( y 1 - y 0 ) 2
(x wherein 0, y 0) and (x 1, y 1) be respectively liquid level position change before and after the coordinate of picture centre position.
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CN102677157A (en) * 2012-06-04 2012-09-19 曾泽斌 Measuring method for relative liquid level position of silicon melt in Czochralski silicon single crystal furnace
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