CN101005000B - Electron emission device and display - Google Patents

Electron emission device and display Download PDF

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Publication number
CN101005000B
CN101005000B CN2006100643340A CN200610064334A CN101005000B CN 101005000 B CN101005000 B CN 101005000B CN 2006100643340 A CN2006100643340 A CN 2006100643340A CN 200610064334 A CN200610064334 A CN 200610064334A CN 101005000 B CN101005000 B CN 101005000B
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focusing
electrode
emitting device
focusing block
electron
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CN101005000A (en
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李承炫
黄成渊
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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Abstract

An electron emission device, and an electron emission display using the electron emission device, includes a substrate, electron emission regions formed on the substrate, driving electrodes formed on the substrate to control electron emissions of the electron emission regions, and a focusing electrode disposed above the driving electrodes and insulated from the driving electrodes, the focusing electrode having openings through which electron beams pass. The focusing electrode includes at least two focusing parts electrically separated from each other and the focusing parts focus the electron beams in different directions.

Description

Electron emitting device and use the electron emission display device of this electron emitting device
Technical field
Aspect of the present invention relates to electron emitting device, particularly has to be improved with the electron emitting device of the focusing electrode that improves the electron beam focusing efficiency and the electron emission display device that uses this electron emitting device.
Background technology
Generally speaking, electronic emission element is divided into two classes, and a kind of is to utilize hot cathode as electron emission source, and a kind of is to utilize cold cathode as electron emission source.The cold cathode electronic emission element has several types, comprises field emitter array (FEA) element, surface conductive reflector (SCE) element, metal-insulator-metal type (MIM) element, and metal-insulator semiconductor (MIS) element.
The FEA element comprises electron emission region and as being used for controlling from the negative electrode and the gate electrode of the drive electrode of the electronics emission of electron emission region.Electron emission region is made by the material with low relatively work function or big relatively depth-width ratio, for example carbon-based material or nano material, and when under vacuum environment, it being applied electric field with box lunch, effective emitting electrons.
Electronic emission element is arranged on first substrate to form electron emitting device.In order to form electron emission display device, electron emitting device is in conjunction with second substrate, and the Optical Transmit Unit with fluorescence coating and anode electrode is formed on second substrate.
In electron emission display device, by being induced to, electron beam path makes great efforts to improve display quality on the target direction.For example, when from electron emission region electrons emitted diffusion and when second substrate moves, they on dropping on the target fluorescence coating, also drop on the black layer of target fluorescence coating of contiguous respective pixel and on other fluorescence coatings, thereby launch the light of undesirable color.Therefore, the focusing electrode of controlling electron beam has been proposed.Focusing electrode generally is arranged in the superiors of electron emitting device and provides the opening that each electron beam is therefrom passed through.Electronics by each opening is assembled to the central shaft of electron beam.
Yet because focusing electrode forms single body (single body) and electron beam is assembled by single focus voltage, accurately the shape of controlling electron beam spot (spot) is very difficult.That is to say, can not be on the level of screen and vertical direction control arrive the shape of the beam spot of each fluorescence coating, and the convergence efficient of electron beam is low.
Summary of the invention
Aspect of the present invention provides a kind of electron emitting device, and it can be controlled independently, and vertical electron beam focuses on and horizontal electron beam focuses on, with the focusing efficiency and the display quality of raising electron beam, and the electron emission display device that uses this electron emitting device.
According to an aspect of the present invention, provide a kind of electron emitting device, it comprises: substrate; Be formed at a plurality of electron emission regions on the substrate; Be formed at a plurality of drive electrodes on the substrate, be used for controlling the electronics emission of electron emission region; And the focusing electrode that is arranged in the drive electrode top and insulate with drive electrode, focusing electrode has the opening that electron beam therefrom passes through, wherein focusing electrode comprises at least two focusing blocks electrically isolated from one, and focusing block focused beam in different directions.
According to an aspect of the present invention, focusing block can be included in first focusing block of arranging on the direction of first substrate and providing opening, and be arranged between first focusing block and with isolated second focusing block of first focusing block.
According to an aspect of the present invention, vertical distance of each opening can form along the width of first focusing block.
According to an aspect of the present invention, focusing block can differ from one another on thickness.
According to an aspect of the present invention, the thickness of second focusing block can be greater than the thickness of first focusing block.
According to an aspect of the present invention, the height of focusing block on drive electrode can differ from one another.
According to an aspect of the present invention, indentation part can be formed between the both sides, opening of each first focusing block, ledge can be formed at the both sides of each second focusing block, thereby ledge forms corresponding to each indentation part ledge and is arranged in the indentation part.
According to an aspect of the present invention, drive electrode can comprise cathode electrode and gate electrode, they are intersected with each other and be arranged in different layers, and insulating barrier places between these layers, and electron emission region can be formed on the cathode electrode at each place, intersection region of negative electrode and gate electrode.
According to an aspect of the present invention, in each intersection region, electron emission region can be arranged into straight line along the length of one of negative electrode and gate electrode.
According to an aspect of the present invention, the focusing electrode opening can be corresponding to each intersection region, thereby exposes the electron emission region that is formed on each intersection region simultaneously.
According to an aspect of the present invention, electron emission region can be made of the material of selecting from following group: carbon nano-tube, graphite, gnf, diamond, diamond-like-carbon, fullerene (C 60), silicon nanowires, and their combination.
According to another aspect of the present invention, provide a kind of electronics emission to show the dress device, having comprised: first and second substrates opposing one another; Be formed at a plurality of electron emission regions on first substrate; Be formed at a plurality of drive electrodes on first substrate, be used for controlling the electronics emission of electron emission region; The focusing electrode that is arranged on the drive electrode top and insulate with drive electrode, focusing electrode has the opening that electron beam therefrom passes through; Be formed at the red, green and blue fluorescence coating on second substrate, and be formed at the anode electrode on the fluorescence coating, wherein focusing electrode comprises at least two focusing blocks electrically isolated from one, and focusing block focused beam on different directions.
According to an aspect of the present invention, the opening of focusing electrode can be corresponding to each pixel region of first substrate, and fluorescence coating can be corresponding to each pixel region.
According to another aspect of the present invention, provide a kind of electron emitting device, having comprised: substrate; Be formed at a plurality of electron emission regions on the substrate; Be formed at a plurality of drive electrodes on the substrate, be used for controlling the electronics emission of electron emission region; And the focusing electrode that is arranged in the drive electrode top and insulate with drive electrode, focusing electrode has the opening that electron beam therefrom passes through, wherein focusing electrode comprises at least two focusing blocks electrically isolated from one, and focusing block forms and to be used for the electric field separately of focused beam, and described electric field differs from one another.
According to an aspect of the present invention, focusing block can be included in first focusing block of arranging on the direction of first substrate and providing opening, and be arranged between first focusing block and with isolated second focusing block of first focusing block.
According to an aspect of the present invention, first focusing block can be electrically connected to each other, thereby forms the first public electric field, and second focusing block can be electrically connected to each other, thereby forms the second public electric field.
According to an aspect of the present invention, vertical distance of each opening can form along the width of first focusing block.
According to an aspect of the present invention, focusing block can differ from one another on thickness.
According to an aspect of the present invention, being applied to the voltage of first focusing block can be less than the voltage that is applied to second focusing block.
According to an aspect of the present invention, the indentation part can be formed between each first focusing block both sides, the opening, ledge can be formed at the both sides of each second focusing block, thereby ledge forms corresponding to each indentation part ledge and is arranged in the indentation part.
According to an aspect of the present invention, drive electrode can comprise cathode electrode and gate electrode, they are intersected with each other and be arranged in different layers, and insulating barrier places between these layers, and electron emission region is formed on the cathode electrode at negative electrode and each place, intersection region of gate electrode.
According to an aspect of the present invention, in each intersection region, electron emission region can be in line along the length arrangement of one of negative electrode and gate electrode.
According to an aspect of the present invention, the focusing electrode opening can be corresponding to each intersection region, thereby exposes the electron emission region that is formed on each intersection region simultaneously.
According to another aspect of the present invention, provide a kind of electron emission display device, having comprised: first and second substrates opposing one another; Be formed at a plurality of electron emission regions on first substrate; Be formed at a plurality of drive electrodes on first substrate, be used for controlling the electronics emission of electron emission region; The focusing electrode that is arranged in the drive electrode top and insulate with drive electrode, focusing electrode has the opening that electron beam therefrom passes through; Be formed at the red, green and blue fluorescence coating on second substrate, and be formed at anode electrode on the fluorescence coating, wherein focusing electrode comprises at least two focusing blocks electrically isolated from one, and focusing block forms and to be used for the electric field separately of focused beam, and described electric field is different each other.
According to an aspect of the present invention, the opening of focusing electrode can be corresponding to each pixel region of first substrate, and fluorescence coating can be corresponding to each pixel region.
Aspect that the present invention is other and/or advantage will propose in ensuing description, and partly become obviously by description, perhaps can recognize by carrying out the present invention.
Description of drawings
These and/or others and advantage of the present invention, according to the description of following examples and will become in conjunction with the accompanying drawings obviously and more understandable, in the accompanying drawing:
Fig. 1 is the part decomposition diagram according to the electron emission display device of the embodiment of the invention;
Fig. 2 is the partial cross section figure of the electron emission display device of Fig. 1;
Fig. 3 is the part top view of electron emitting device shown in Figure 1;
Fig. 4 to Fig. 6 is the fluorescence coating of conditional electronic emission display and the schematic diagram of beam spot;
Fig. 7 is the fluorescence coating of electron emission display device of Fig. 1 to Fig. 3 and the schematic diagram of beam spot;
Fig. 8 is the part decomposition diagram of electron emission display device according to another embodiment of the present invention;
Fig. 9 is the partial cross section figure of the electron emission display device of Fig. 8; And
Figure 10 is the part vertical view of electron emitting device, wherein shows the modified example of focusing electrode.
Embodiment
Now will be at length with reference to embodiments of the invention, the example of these embodiment is shown in the drawings, and wherein identical Reference numeral refers to components identical all the time.Embodiment is described to explain the present invention below with reference to accompanying drawing.
Fig. 1 is the electron emission display device part decomposition diagram according to the embodiment of the invention, and Fig. 2 is the partial cross section figure of the electron emission display device of Fig. 1, and Fig. 3 is the part top view of the electron emitting device shown in Fig. 1.Referring to figs. 1 to 3, electron emission display device comprises first and second substrates 10 and 12, and they are faced and predetermined at interval distance mutually.The seal (not shown) is provided at the edge of first and second substrates 10 and 12 so that substrate 10 and 12 is sealed.Find time by first and second substrates 10 and 12 and the space that limits of seal to form vacuum casting, keep vacuum degree to be approximately 10 -6Holder.Yet, be appreciated that and can use other vacuum degrees.
A plurality of electronic emission elements are arranged in facing on the surface of second substrate 12 of first substrate 10, to form electron emitting device 100.Optical Transmit Unit 110 combinations that provide on the electron emitting device 100 and second substrate 12 are to form electron emission display device.
A plurality of cathode electrodes (first electrode) 14 are arranged on first substrate 10 with the candy strip form of extending at first direction (Y-axis among Fig. 1).First insulating barrier 16 is formed on first substrate 10 with covered cathode electrode 14.A plurality of gate electrodes 18 (second electrode) are formed on first insulating barrier 16 with the candy strip form of extending in second direction (the x axle among Fig. 1), and second direction meets at right angles with first direction and intersects.
Each intersection region of cathode electrode 14 and gate electrode 18 limits pixel region.At each pixel region, one or more electron emission regions 20 are formed on the cathode electrode 14. Opening 161 and 181 corresponding to each electron emission region 20 is respectively formed in first insulating barrier 16 and the gate electrode 18, to expose the electron emission region 20 on first substrate 10.
Electron emission region 20 is made of such material, in vacuum environment when electric field is put on this material its emitting electrons.Example comprises, carbonaceous material (carbonaceous material) or nano material, but be not limited to this.For example, electron emission region 20 can be by carbon nano-tube, graphite, gnf, diamond, diamond-like-carbon, fullerene (C 60), being combined to form of silicon nanowires or they.Though be not limited thereto, electron emission region 20 can form by silk screen printing, direct growth, sputter or chemical vapor deposition process.Alternatively, electron emission region 20 can form the prong structure (pointed-tip structure) of Mo base or Si base.
At each pixel region, electron emission region 20 is in line along the length arrangement of one of negative electrode and gate electrode.As shown in the figure, electron emission region 20 is along cathode electrode 14.Each electron emission region 20 can have circular top surface.Be not restricted to the embodiments shown at the arrangement mode of the electron emission region 20 of each pixel region and the shape of each electron emission region 20.
In the description in front, be arranged in cathode electrode 14 tops and first insulating barrier 16 and place therebetween situation, situation that the present invention is not limited thereto although described gate electrode 18.That is to say that gate electrode 18 can be arranged in cathode electrode 14 belows and first insulating barrier 16 places therebetween.In this example, electron emission region 20 can be formed on the sidewall of the cathode electrode 14 on first insulating barrier 16.
In addition, second insulating barrier 24 is formed on while cover gate electrode 18 on first insulating barrier 16.Focusing electrode 22 is formed on second insulating barrier 24.That is to say that gate electrode 18 is by second insulating barrier 24 and focusing electrode 22 insulation.Electron beam is respectively formed in second insulating barrier 24 and the focusing electrode 22 from its opening that passes 241 and 221.Thereby can forming, the opening 221 of focusing electrode 22 correspondingly with each pixel region assembles from the pixel region electrons emitted substantially.Alternatively, the opening 221 of focusing electrode 22 forms corresponding with each opening 181 of gate electrode 18, thereby assembles respectively from each electron emission region 20 electrons emitted.There is shown the former.
In an illustrated embodiment, focusing electrode 22 comprises at least two focusing blocks electrically isolated from one.These focusing blocks provide focussing force for the electron beam path on different directions from each other, with controlling electron beam spot more accurately.For example, focusing electrode 22 comprise with cathode electrode 14 and gate electrode 18 in one of be arranged in parallel and provide a plurality of first focusing blocks 26 corresponding to the opening 221 of each pixel region, and be formed between first focusing block 26 and a plurality of second focusing blocks 28 spaced away.Though be depicted as two focusing blocks 26,28, be appreciated that and use extention.
With reference to the xy plane among the figure 1, first focusing block 26 is positioned at the left side and the right of electron emission region 20.First focusing block 26 is electrically connected to each other, and is used for assembling electronics in the horizontal direction (the x axle among Fig. 1) of screen to receive the first focus voltage V1.Second focusing block 28 is positioned at the above and below of electron emission region 20 and is electrically connected to each other, and is used for assembling electronics in vertical direction (the y axle among Fig. 1) to receive the second focus voltage V2.
Fluorescence coating 30 (for example red, green and blue fluorescence coating 30R, 30G and 30B) be formed at second substrate 12 in the face of on the surface of first substrate 10.The black layer 32 that is used for strengthening Display Contrast is formed between the fluorescence coating 30 on second substrate 12.Fluorescence coating 30 can form each pixel region that limits corresponding on first substrate 10.
Anode electrode 34 is made of electric conducting material (for example aluminium), is formed on fluorescence coating 30 and the black layer 32.The effect of anode electrode 34 is also will improve screen intensity to visible light reflected back second substrate 12 of first substrate, 10 radiation from fluorescence coating 30 by receiving the high voltage that quickens by opening 241,221 electrons emitted Shu Suoxu.
Selectively, anode electrode 34 can replace metal material to form by transparent, conductive material (for example indium tin oxide (ITO)).In this case, anode electrode is arranged on second substrate 12, and fluorescence coating 30 and black layer 32 form on the anode electrode 34.Selectively, anode electrode 34 can comprise transparent conductive layer and metal level.
Being arranged between first substrate 10 and second substrate 12 is distance piece 36 (see figure 2)s, is used for as one man keeping a gap between first substrate 10 and second substrate 12.Distance piece 36 is arranged to corresponding to black layer 32 so that do not disturb the light emission of fluorescence coating 30.
When predetermined voltage was applied on cathode electrode 14, gate electrode 18, first focusing block 26, second focusing block 28 and the anode electrode 34, above-mentioned electron emission display device was driven.For example, one of cathode electrode 14 and gate electrode 18 are as the scan electrode that receives turntable driving voltage, and another is as the data electrode that receives data drive voltage.First focusing block 26 and second focusing block 28 receive negative direct current (DC) voltage (for example several lie prostrate tens volts) or dc voltage 0.Anode electrode 34 receives positive direct-current voltages (for example hundreds of is to several kilovolts), and it can accelerated electron beam.
Thereby at the unit picture element place, electric field forms around electron emission region 20, and the voltage difference between each cathode electrode 14 of unit picture element place and gate electrode 18 equals or is higher than threshold voltage, so electronics is from electron emission region 20 emissions.Electrons emitted is assembled when the opening 221 by first focusing block 26, and attracts and clash into corresponding fluorescence coating 30 by being applied to high voltage on the anode electrode 34, thus fluorescence excitation layer 30.
Above-mentioned driving operating period, because first focusing block 26 is assembled electronics on the horizontal direction of screen, and second focusing block 28 is assembled electronics on the vertical direction of screen, by the correct setting first focus voltage V1 and the second focus voltage V2, can correct the beam spot that arrives corresponding fluorescence coating 30 corresponding to the shape of corresponding fluorescence coating 30.
Fig. 4 to Fig. 6 has shown the beam spot that respectively arrives corresponding fluorescence coating in the conditional electronic emission display, a kind of situation is not apply voltage (Fig. 4) to focusing electrode, a kind of situation is to apply-20V voltage (Fig. 5) to focusing electrode, and a kind of situation is to apply-50V voltage to focusing electrode.
With reference to figure 4, beam spot BS1 greater than the width of fluorescence coating 30, has therefore reduced the light emission effciency of fluorescence coating 30 at the width of level and vertical direction.With reference to figure 5, beam spot BS2 the width of level and vertical direction all less than Fig. 4 in the width of beam spot BS1, yet greater than the width of fluorescence coating 30, therefore reduced the light emission effciency of fluorescence coating 30.
With reference to figure 6, the horizontal width of beam spot BS3 is less than the horizontal width of fluorescence coating 30.Therefore, exist electron beam not fall zone on the fluorescence coating 30, thereby reduced the light emission uniformity of fluorescence coating 30.
Fig. 7 has shown the beam spot that respectively arrives fluorescence coating in the electron emission display device of present embodiment, wherein applies-20V voltage and apply voltage greater than-100V to second focusing block 28 to first focusing block 26.As shown in Figure 7, the width of beam spot BS4 level and vertical direction is very similar to the width of fluorescence coating 30, thereby has strengthened the light emission effciency and the light emission uniformity of fluorescence coating 30
Fig. 8 and Fig. 9 have shown according to the present invention the electron emission display device of another body embodiment.For convenience of description, as above mentioned, identical Reference numeral refers to components identical in present embodiment and the previous embodiment.With reference to figure 8 and 9, the focusing electrode 22 of present embodiment comprises at least two focusing blocks 26,28, and they are electrically isolated from one and thickness is different.Focusing block 26,28 provides focussing force to electron beam path on different directions from each other, thus controlling electron beam spot more accurately.
For example, focusing electrode 22 comprises a plurality of first focusing blocks 26 with one of cathode electrode 14 and gate electrode 18 parallel arrangement.First focusing block 26 provides the opening 221 corresponding to each pixel region, and is formed between first focusing block 26 and a plurality of second focusing blocks 28 spaced away.First focusing block 26 of illustrated embodiment and second focusing block 28 receive with previous embodiment in be applied to identical voltage on first focusing block 26 and second focusing block 28.What therefore, apply voltage correspondingly is described in this omission.
In the embodiment shown, for assemble with focusing electrode 22 with the isolated electronics of relative big distance (just, by the center of opening 221 and the electronics that on the vertical direction of screen, spreads), the thickness t 2 of each second focusing block 28 is set at the thickness t 1 greater than first focusing block 26.In addition, be applied to the second voltage V2 on second focusing block 28 greater than the first focus voltage V1 that is applied on first focusing block 26.
When second focusing block 28 forms than first focusing block 26 higher (thicker), can focus on the electron beam that when second focusing block 28 is in lower position, can not focus on.In addition, when the second focus voltage V2 is higher than the first focus voltage V1, the focusing force of second focusing block 28 increases, therefore can effectively assemble with the isolated electronics of relative big distance with focusing block 28, thereby on the vertical direction of screen focused beam effectively.
Figure 10 is the part top view of electron emitting device, and the modified example of focusing electrode 22 ' wherein has been described.With reference to Figure 10, indentation part 38 is formed at each first focusing block, 26 ' both sides and between opening 221, is used for partly reducing the width of first focusing block 26 '.In addition, ledge 40 is formed at the both sides of each second focusing block 28 '.Ledge 40 forms corresponding to each indentation part 38.That is to say that ledge 40 is arranged in the indentation part 38.Therefore, because the ledge 40 that applies second focus voltage can further strengthen electron beam focusing efficiency in vertical direction mainly round opening 221.
Although in the aforementioned embodiment, illustrated that aspect of the present invention is applied to the electron emitting device with FEA element arrays, but aspect of the present invention also can be applied to have surface conductive reflector (SCE) element, the electron emitting device of metal-insulator-metal type (MIM) element or metal-insulator semiconductor (MIS) element arrays.
According to aspects of the present invention, because focusing electrode comprises at least two focusing blocks electrically isolated from one, and focusing block is focused beam on different directions, and beam spot has level and vertical width, and these width are very similar to the width of each fluorescence coating.Therefore, the light emission effciency of electron emission display, brightness and light emission uniformity can be enhanced.
Though represented and described some embodiments of the present invention, yet it will be appreciated by those skilled in the art that without departing from the principles and spirit of the present invention, can make variation in this embodiment, scope of the present invention defines in claim and its equivalent.

Claims (33)

1. electron emitting device comprises:
Substrate;
Be formed at a plurality of electron emission regions on the described substrate;
Be formed at a plurality of drive electrodes on the described substrate, be used for controlling the electronics emission of described electron emission region; And
The focusing electrode that is arranged on described drive electrode top and insulate with described drive electrode, described focusing electrode has electron beam from its opening that passes through,
Wherein said focusing electrode comprises at least two focusing blocks electrically isolated from one, and wherein for each opening, described focusing block is set to focus in different directions the electron beam by described opening.
2. electron emitting device as claimed in claim 1, wherein said focusing block be included in arrange on the direction of described substrate and provide first focusing block of described opening and be arranged between described first focusing block and with isolated second focusing block of described first focusing block.
3. electron emitting device as claimed in claim 2, wherein, vertical distance of each described opening forms along the width of described first focusing block.
4. electron emitting device as claimed in claim 1, wherein said focusing block above described drive electrode with the different distance setting.
5. electron emitting device as claimed in claim 1, wherein said focusing block has different respective thickness.
6. electron emitting device as claimed in claim 5, wherein said focusing block be included in arrange on the direction of described substrate and provide first focusing block of described opening and be arranged between described first focusing block and with isolated second focusing block of described first focusing block.
7. electron emitting device as claimed in claim 6, wherein, vertical distance of each described opening forms along the width of described first focusing block.
8. electron emitting device as claimed in claim 7, the thickness of wherein said second focusing block is greater than the thickness of described first focusing block.
9. electron emitting device as claimed in claim 2, wherein each first focusing block comprise be formed at each first focusing block both sides, adjacent apertures between the indentation part, each second focusing block comprises the ledge of the opposite side that is positioned at described second focusing block, thereby and described ledge form corresponding to the described ledge of described each indentation part and be arranged in the described indentation part.
10. electron emitting device as claimed in claim 1, wherein said drive electrode comprises cathode electrode and gate electrode, they are located intersected with each other and are arranged in different layers in the intersection region, described electron emitting device also comprises the insulating barrier that places between the described different layer, and described electron emission region is formed on the described cathode electrode at each place, described intersection region of described negative electrode and gate electrode.
11. electron emitting device as claimed in claim 1, wherein said electron emission region is located to be in line along the length arrangement of one of described negative electrode and gate electrode in each intersection region of described cathode electrode and described gate electrode intersection.
12. as the electron emitting device of claim 10, wherein said focusing electrode provides opening, thereby described opening exposes the described electron emission region that is formed on each place, intersection region simultaneously corresponding to described each intersection region.
13. as the electron emitting device of claim 10, wherein each electron emission region is by carbon nano-tube, graphite, gnf, diamond, diamond-like-carbon, fullerene C60, silicon nanowires, perhaps they is combined to form.
14. electron emitting device as claimed in claim 1, wherein said electron emitting device are one of field emitter array FEA element, surface conductive reflector SCE element, metal-insulator-metal type MIM element and metal-insulator semiconductor MIS element.
15. an electron emission display device comprises:
First and second substrates opposing one another;
Be formed at a plurality of electron emission regions on described first substrate;
Be formed at a plurality of drive electrodes on described first substrate, be used for controlling the electronics emission of described electron emission region;
The focusing electrode that is arranged on described drive electrode top and insulate with described drive electrode, described focusing electrode has electron beam from its opening that passes through;
Be formed at the red, green and blue fluorescence coating on described second substrate, and
Be formed at the anode electrode on the described fluorescence coating,
Wherein said focusing electrode comprises at least two focusing blocks, and it is electrically isolated from one, thereby and wherein is set to will focus on by the described electron beam of described opening in different directions arrive the red, green and blue fluorescence coating for the described focusing block of each opening.
16. as the electron emission display device of claim 15, the opening of wherein said focusing electrode is corresponding to each pixel region of described first substrate, and described fluorescence coating is corresponding to described each pixel region.
17. an electron emitting device comprises:
Substrate;
Be formed at a plurality of electron emission regions on the described substrate;
Be formed at a plurality of drive electrodes on the described substrate, be used for controlling the electronics emission of described electron emission region; And
The focusing electrode that is arranged on described drive electrode top and insulate with described drive electrode, described focusing electrode has electron beam from its opening that passes through,
Wherein said focusing electrode comprises at least two focusing blocks, and it is electrically isolated from one, and wherein for each opening, electric field focuses on the electron beam that passes through described opening thereby described focusing block forms separately, and described electric field differs from one another.
18. as the electron emitting device of claim 17, wherein said focusing block be included in arrange on the direction of described substrate and provide first focusing block of opening and be arranged between described first focusing block and with isolated second focusing block of described first focusing block.
19. as the electron emitting device of claim 18, thereby wherein said first focusing block is electrically connected to each other and forms the first public electric field, thereby and described second focusing block be electrically connected to each other and form the second public electric field.
20. as the electron emitting device of claim 19, wherein vertical distance of each described opening forms along the width of described first focusing block.
21. as the electron emitting device of claim 17, wherein said focusing block on described drive electrode with the different distance setting.
22. as the electron emitting device of claim 17, wherein said focusing block has different respective thickness.
23. as the electron emitting device of claim 22, wherein said focusing block be included in arrange on the direction of described substrate and provide first focusing block of described opening and be arranged between described first focusing block and with isolated second focusing block of described first focusing block.
24. as the electron emitting device of claim 23, wherein vertical distance of each described opening forms along the width of described first focusing block.
25. as the electron emitting device of claim 24, the voltage that wherein is applied to described first focusing block is less than the voltage that is applied to described second focusing block.
26. electron emitting device as claim 18, wherein each first focusing block comprise be formed at each first focusing block both sides, adjacent described opening between the indentation part, each second focusing block comprises the ledge of the opposite side that is positioned at described second focusing block, thereby and described ledge form corresponding to the described ledge of described each indentation part and be arranged in the described indentation part.
27. electron emitting device as claim 17, wherein said drive electrode comprises cathode electrode and gate electrode, they are intersected with each other and be arranged in different layers in the intersection region, described electron emitting device also comprises the insulating barrier that places between the described different layer, and described electron emission region is formed on the described cathode electrode at each place, described intersection region of described negative electrode and gate electrode.
28. as the electron emitting device of claim 27, wherein said electron emission region is located to be in line along the length arrangement of one of described negative electrode and gate electrode in each intersection region of described cathode electrode and described gate electrode intersection.
29. as the electron emitting device of claim 27, wherein said focusing electrode provides opening, thereby described opening exposes the described electron emission region that is formed on each place, intersection region simultaneously corresponding to described each intersection region.
30. as the electron emitting device of claim 27, each electron emission region being combined to form wherein by carbon nano-tube, graphite, gnf, diamond, diamond-like-carbon, fullerene C60, silicon nanowires or they.
31. as the electron emitting device of claim 17, wherein said electron emitting device is one of field emitter array FEA element, surface conductive reflector SCE element, metal-insulator-metal type MIM element and metal-insulator semiconductor MIS element.
32. an electron emission display device comprises:
First and second substrates opposing one another;
Be formed at a plurality of electron emission regions on described first substrate;
Be formed at a plurality of drive electrodes on described first substrate, be used for controlling the electronics emission of described electron emission region;
The focusing electrode that is arranged in described drive electrode top and insulate with described drive electrode, described focusing electrode has electron beam from its opening that passes through;
Be formed at the red, green and blue fluorescence coating on described second substrate, and
Be formed at the anode electrode on the described fluorescence coating,
Wherein said focusing electrode comprises at least two focusing blocks, it is electrically isolated from one, and, focus on electron beam by described opening arriving corresponding red, green and blue fluorescence coating thereby described focusing block forms electric field separately, and described electric field differs from one another wherein for each opening.
33. as the electron emission display device of claim 32, the opening of wherein said focusing electrode is corresponding to each pixel region of described first substrate, and described fluorescence coating is corresponding to described each pixel region.
CN2006100643340A 2005-10-31 2006-10-31 Electron emission device and display Expired - Fee Related CN101005000B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR103355/05 2005-10-31
KR20050103355A KR101107132B1 (en) 2005-10-31 2005-10-31 Electron emission device and electron emission display device using the same
KR98525/06 2006-10-10
KR1020060098525A KR20080032532A (en) 2006-10-10 2006-10-10 Electron emission device and electron emission display using the same

Publications (2)

Publication Number Publication Date
CN101005000A CN101005000A (en) 2007-07-25
CN101005000B true CN101005000B (en) 2010-12-01

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