CN101002127B - Projection optical system, exposing method and device - Google Patents
Projection optical system, exposing method and device Download PDFInfo
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- CN101002127B CN101002127B CN2005800263699A CN200580026369A CN101002127B CN 101002127 B CN101002127 B CN 101002127B CN 2005800263699 A CN2005800263699 A CN 2005800263699A CN 200580026369 A CN200580026369 A CN 200580026369A CN 101002127 B CN101002127 B CN 101002127B
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Abstract
A projection optical system in which a reduced image on a first plane (R) is projected onto a second plane (W). The optical path between the projection optical system and the second plane is filled with a liquid (Lm) having a refractive index larger than 1.5 when the refractive index of the gas in the optical path of the projection optical system is 1. The projection optical system has a boundarylens (Lb) the first surface of which is in contact with a gas and the second surface of which is in contact with a liquid, and the boundary lens has a positive refractive power and is formed of an optical material having a refractive index larger than 1.8. The projection optical system in which for example, an effective image-side numerical aperture larger than 1.4 is ensured by interposing a liquid in the optical path to the image plane and a relatively large effective image-forming area is ensured.
Description
Technical field
The invention relates to projection optical system, exposure device and exposure method, the projection optical system of employed exposure device when making with photoetching (lithography) technology especially in regard to suitable micro element (microdevice) with semiconductor element or liquid crystal display cells etc.
Background technology
In making the photoetching process of semiconductor element etc., use pattern image with mask (or reticle mask (reticle)), via optical system, the exposure device of projection exposure on photonasty substrate (wafer of coating photoresist, glass plate etc.).At exposure device, along with the aggregation degree of semiconductor element etc. promotes, the desired resolving power of projection optical system (resolution) improves more.
Therefore, for satisfying requirement, when the wavelength X of illumination light (exposure light) is shortened, be necessary picture side numerical aperture NA increasing with projection optical system for the resolving power of projection optical system.The concrete resolution of going up projection optical system is to represent with K λ/NA (K is a technological coefficient).Again, be that to make the refractive index of the medium (normally gas such as air) between projection optical system and the photonasty substrate be n as side numerical aperture NA, when the maximum incident angle of photonasty substrate is θ, represent with nsin θ.
This kind occasion strengthens maximum incident angle θ when increasing as the side numerical aperture, becomes big to the incident angle of photonasty substrate and from the angle of emergence of projection optical system, increases in the reflection loss of optical surface, can not guarantee the picture side numerical aperture of big actual effect.Therefore, in the known light path that has between projection optical system and photonasty substrate by being full of high soak technology (for example patent documentation 1: International Publication WO2004/019128 pamphlet) in the hope of increasing liquid as the side numerical aperture of refractive index like the medium of liquid
The projection optical system that above-mentioned patent documentation 1 is disclosed uses pure water to be immersion liquid, is contacted with air and uses quartz lens as the boundary lens that the face of side is contacted with pure water for the face of object side.But,, guarantee when for example using the ArF PRK that the picture side numerical aperture of 1.3 degree is its limit with this existing formation.
Summary of the invention
The present invention proposes for the problems referred to above that solve prior art; One object of the present invention be to provide a kind of make liquid between and image planes between light path in for example one side guarantee picture side numerical aperture than 1.4 big actual effect, simultaneously can guarantee the projection optical system of bigger effective knot image field.Again; Another object of the present invention is to provide and use one side to guarantee that bigger effective knot picture zone, one side for example have the projection optical system than the high-resolution of 1.4 big picture side numerical apertures, can be with a kind of exposure device and the exposure method of fine pattern with the high precision projection exposure.
For solving the problems of the technologies described above, first example of the present invention provides a kind of projection optical system, and first reduced image projection in second, is characterized in:
Gas refracting index in the light path of above-mentioned projection optical system is 1 o'clock, and the light path between above-mentioned projection optical system and above-mentioned second can be full of the liquid that has than 1.5 big refractive indexes;
Above-mentioned projection optical system comprises the boundary lens that above-mentioned first side contacts with above-mentioned gas and above-mentioned second side contacts with aforesaid liquid;
Above-mentioned boundary lens have positive refractive power (positive ability), are formed by the optical material that has than 1.8 big refractive indexes.
Second example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, forms with at least a material among CaO and the MgO.
The 3rd example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, with second optical element, in abutting connection with the above-mentioned object side that is disposed at this first optical element;
At least one side of above-mentioned first optical element and above-mentioned second optical element is formed by at least a material among CaO and the MgO.
The 4th example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, with second optical element, in abutting connection with the above-mentioned object side that is disposed at this first optical element;
Above-mentioned first optical element is to be formed by CaO or MgO; And
Above-mentioned second optical element is to be formed by MgO or CaO.
The 5th example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, with second optical element, in abutting connection with the above-mentioned object side that is disposed at this first optical element, with the 3rd optical element, in abutting connection with the above-mentioned object side that is disposed at this second optical element;
Above-mentioned first to the 3rd optical element is the optical element that forms with CaO, with the optical element that forms with MgO, with the optical element that forms with quartz glass;
The thickness of above-mentioned optical axis direction with the formed optical element of CaO and thickness with the optical axis direction of the formed optical element of MgO are determined with the mode that the intrinsic birefringent influence that above-mentioned CaO and above-mentioned MgO had is reduced.
The 6th example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
Optical element with CaO formation;
In the formed optical element of this CaO, be provided with the coating (coat) that comprises MgO.
The 7th example of the present invention provides a kind of optical system, with object as projection on substrate, be characterized in comprising:
With the formed optical element of MgO;
In the formed optical element of this MgO, be provided with the coating that comprises CaO.
The 8th example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, from CaO, comprises the crystalline material of CaO, and MgO and comprising among the crystalline material crowd that crystalline material constituted of MgO is formed by a material at least.
The 9th example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, with second optical element, in abutting connection with the above-mentioned object side that is disposed at this first optical element;
Above-mentioned first optical element and above-mentioned second is learned at least one side of element; Be from CaO and comprise the first crystalline material crowd that crystalline material constituted of CaO, and MgO and the selected material of crystalline material crowd that comprises among the second crystalline material crowd that crystalline material constituted of MgO at least by a side form.
The tenth example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, with second optical element, in abutting connection with the above-mentioned object side that is disposed at this first optical element;
Above-mentioned first optical element is from CaO and comprises selected first material of the first crystalline material crowd that crystalline material constituted of CaO, or forms from MgO and selected second material of the second crystalline material crowd that crystalline material constituted that comprises MgO;
Above-mentioned second optical element is to form from selected second material of the above-mentioned second crystalline material crowd or from selected first material of the above-mentioned first crystalline material crowd.
The 11 example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
First optical element is disposed at image planes side, with second optical element, in abutting connection with the above-mentioned object side that is disposed at this first optical element, with the 3rd optical element, in abutting connection with the above-mentioned object side that is disposed at this second optical element;
Above-mentioned first to the 3rd optical element; Be from CaO and comprise the optical element that selected first material of the first crystalline material crowd that crystalline material constituted of CaO forms; With from MgO and comprise the optical element that selected second material of the second crystalline material crowd that crystalline material constituted of MgO forms, with the optical element that forms with quartz glass;
The thickness of the optical axis direction of the optical element that forms from selected above-mentioned first material of above-mentioned first crystalline material and the thickness of the optical axis direction of the optical element that forms from selected above-mentioned second material of the above-mentioned second crystalline material crowd are so that the mode that the intrinsic birefringent influence that is had from selected above-mentioned first material of the above-mentioned first crystalline material crowd and selected above-mentioned second material of the above-mentioned second crystalline material crowd reduces determines.
The 12 example of the present invention provides a kind of projection optical system, with object as projection on substrate, be characterized in comprising:
Optical element is from CaO and comprise selected first material of the first crystalline material crowd that crystalline material constituted of CaO and form;
Be provided with the formed optical element of first material at this and comprise from MgO and comprise the coating of selected second material of the second crystalline material crowd that crystalline material was constituted of MgO.
The 13 example of the present invention provides a kind of optical system, with object as projection on substrate, be characterized in comprising:
Optical element is from MgO and comprise selected second material of the second crystalline material crowd that crystalline material constituted of MgO and form;
Be provided with the formed optical element of second material at this and comprise from CaO and comprise the coating of selected first material of the first crystalline material crowd that crystalline material was constituted of CaO.
The of the present invention the 14 implements kenel, and a kind of knot image optical system is provided, and first conjugation with second optics wherein is characterized in:
The refractive index of the gas in the light path of above-mentioned knot image optical system is 1 o'clock, and the light path between above-mentioned projection optical system and above-mentioned second can be full of the liquid that has than 1.5 big refractive indexes,
Above-mentioned projection optical system comprises the boundary lens that above-mentioned first side contacts with above-mentioned gas and above-mentioned second side contacts with aforesaid liquid;
Above-mentioned boundary lens have positive refractive power, are formed by the optical material that has than 1.7 big refractive indexes.
The 15 example of the present invention provides a kind of exposure device, comprises the projection optical system of first example to the, 13 examples, and the liquid that soaks the zone via the formed liquid of image planes side of above-mentioned projection optical system makes public aforesaid substrate.
The 16 example of the present invention provides a kind of exposure method, uses the projection optical system of first example to the, 13 examples, and the liquid that soaks the zone via the formed liquid of image planes side of above-mentioned projection optical system makes public aforesaid substrate.
At the 17 example of the present invention, a kind of optical element manufacturing approach is provided, be characterized in using the exposure device of the 15 example.
Projection optical system of the present invention is to make to have than in the light path of liquid between between boundary lens and image planes (second face) of 1.5 big refractive indexes the time; Corresponding to the high index of refraction of the picture side institute contact liq of boundary lens, the boundary lens are formed by the optical material that has than 1.8 big refractive indexes.Consequently, the present invention can realize a kind of projection optical system, can make in the light path of liquid between between image planes and for example one side guarantee that one side can guarantee that bigger effective knot picture is regional than the picture side numerical aperture of 1.4 big actual effect.
Therefore; Exposure device of the present invention and exposure method; Be that one side is guaranteed bigger effective knot picture zone; One side is for example via the projection optical system that has than the high-resolution of 1.4 big picture side numerical apertures, can be with fine pattern with the high precision projection exposure, and then can be with the good micro element of high precision manufacturing.
Description of drawings
Fig. 1 is the formation skeleton diagram of expression about the exposure device of example of the present invention.
Fig. 2 is the location diagram that is illustrated in formed rectangular-shaped static exposure area (being the actual effect exposure area) and benchmark optical axis on the wafer.
Fig. 3 is boundary lens and the formation skeleton diagram between the wafer of each instance of this example of expression.
Fig. 4 is the lens pie graph of expression about the projection optical system of first instance of present embodiment.
Fig. 5 is the lateral aberration figure of expression first embodiment.
Fig. 6 is the lens pie graph of expression about the projection optical system of second instance of this example.
Fig. 7 is the lateral aberration figure that is illustrated in second embodiment.
Fig. 8 is the summary pie graph of expression about the exposure device EX of second example of the present invention.
Fig. 9 is the process flow diagram of obtaining as the method for the semiconductor element of micro element.
Figure 10 is the process flow diagram of obtaining as the method for the liquid crystal display cells of micro element.
Embodiment
Projection optical system of the present invention is by making in the light path of liquid between between boundary lens and image planes (second face) that has than 1.5 big refractive indexes, for example to guarantee to have the picture side numerical aperture (second side numerical aperture) than 1.4 big actual effect.This kind occasion; Only for as the liquid refractive index of immersion liquid with individual setting when big; The curvature of the convex surface of the object side of boundary lens (first side) become excessive not only lens design become impossible; And can not guarantee fully big effective knot picture zone (occasion at exposure device is effective static exposure area, and at second face occasion of object plane being arranged is the effective field of view zone) (on second) on the image planes.
Thereby the present invention is the high index of refraction of picture side (second side) liquid that face contacted corresponding to the boundary lens, and the boundary lens are formed by the optical material that has than 1.8 big refractive indexes.Its result; Projection optical system of the present invention be make liquid between and image planes (second face) between light path in for example one side can guarantee picture side numerical aperture (second side numerical aperture) than 1.4 big actual effect, one side can be guaranteed bigger effective knot picture zone (or effective field of view is regional).In addition; Exposure device of the present invention and exposure method; Be that one side is guaranteed bigger effective knot picture zone (or effective field of view zone); One side for example via the high-resolution projection optical system that has than 1.4 big picture side numerical apertures (second side numerical aperture), makes fine pattern with the high precision projection exposure.
The present invention is advisable with the conditional (1) below satisfying.In conditional (1), Fb is the focal length of boundary lens, and Yi is that second field for image planes is combined into the maximum image height in image planes, and second field for object plane is combined into the maximum object height in object plane.
0.11＜Yi/Fb＜0.15 (1)
During the lower limit of Yi/Fb less-than condition formula (1), the focal length Fb of boundary lens becomes excessive, be difficult for guaranteeing want the picture side numerical aperture of size and bad.On the one hand, Yi/Fb surpasses going up in limited time of conditional (1), and the focal length Fb of boundary lens becomes too small, and is bad because all scopes in desired knot picture zone are difficult for well the revisal aberration.For guaranteeing bigger picture side numerical aperture, the lower limit of conditional (1) is set in 0.115 is advisable.In addition, all scopes revisal that aberration is better in desired knot picture zone is set at 0.14 with higher limit and is advisable.This conditional (1) is not to state the reflection and refraction optical system of three knots with a concave mirror and two light path bending mirrors of embodiment as type after being only applicable to; Also go for by the reflection-refraction type optical system of linear light axle always that has with most concave mirrors, or the refractive optical system.That is, in the occasion of the boundary lens that are suitable for so big refractive index, any structure that constitutes towards the optical system of light incident side of boundary lens no matter when as long as the boundary lens satisfy condition formula (1), just can get its effect.
The optical material that is used to form the boundary lens of the present invention (promptly having the optical material than 1.8 big refractive indexes) for example can use magnesium oxide (MgO).(wavelength=193.3nm) is about 2.1 to magnesian refractive index for the ArF PRK.At this, magnesium oxide belongs to the crystalline material of cubic system, has intrinsic birefringence.On the one hand, calcium oxide (CaO) is though also belong to the crystalline material of cubic system and have intrinsic birefringence, and the symbol of the double refraction amount of magnesium oxide and calcium oxide is opposite.
Therefore form the occasion of boundary lens by magnesium oxide, make magnesian intrinsic birefringent influence, be advisable to have the formed at least one transmittance member of calcium oxide by the reducible mode of neutralization effect.But, the double refraction amount of calcium oxide than magnesian double refraction amount substantially for bigger.Thereby; Like the projection optical system with reduction magnification of the present invention; For the intrinsic birefringent influence with calcium oxide suppresses for less, the smaller and good position of the heart far away (telecentric) property in the incident angle scope of light, configuration is advisable by the formed transmittance member of calcium oxide.On concrete be along light carry out the path from object plane (first face) in regular turn by the first transmittance member to the, three transmittance members, be advisable to comprise by the formed transmittance member of calcium oxide.
In addition, the present invention also can use calcium oxide for the optical material that forms the boundary lens.(wavelength=193.3nm) is about 2.7 to the refractive index of calcium oxide for the ArF PRK; This kind occasion makes the intrinsic birefringent influence of the calcium oxide that forms the boundary lens by the reducible mode of neutralization effect, is advisable to have by the formed at least one transmittance member of magnesium oxide.
In addition; The present invention along light carry out the path from image planes (second face) in regular turn by the first transmittance member to the, three transmittance members; Comprise by the formed at least one transmittance member of magnesium oxide, and by the formed at least one transmittance member of calcium oxide, be advisable with the conditional (2) below satisfying.For conditional (2), TM be by the center thickness of the formed at least one transmission member of magnesium oxide with, TC be by the center thickness of the formed at least one transmittance member of calcium oxide with.
0.05＜TC/TM＜0.43 (2)
TC/TM is than the lower limit of conditional (2) hour; By the center thickness of the formed transmittance member of magnesium oxide become excessively with (when this transmittance number of components is that 1 occasion is its center thickness) TM, magnesian intrinsic birefringent influence is residual suitable.On the one hand; When TC/TM is bigger than the higher limit of conditional (2); By the center thickness of the formed transmittance member of calcium oxide become excessively with (when this transmittance number of components is that one occasion is its center thickness) TC, the intrinsic birefringent residual influence of calcium oxide is suitable.Be good performance effect of the present invention, the lower limit of conditional (2) is set in 0.08, make higher limit be set in 0.4 and be advisable.
Simultaneously; From image planes in regular turn first to the 3rd transmittance member comprise by the formed transmittance member of magnesium oxide with by the occasion of the formed transmittance member of calcium oxide, by the formed transmittance member of magnesium oxide with for example be to be advisable by the formed transmittance member of calcium oxide with the method that optics contact (optical contact) the formation joint lens of fitting.Being to use the surface of two optical components for optics contact is same shape with high-precision processing, with these surfaces near the technology of not using solid two optical components to be adhered to by intermolecular gravitation.Because the double refraction amount of calcium oxide is bigger than magnesium oxide, be easier to attenuation by the formed transmittance member ratio of calcium oxide as stated, its maintenance becomes difficulty.But, by the form that adopt to engage lens, will be by the formed relatively thinner transmittance member of calcium oxide, and become one with easy maintenance by the formed thicker transmittance member of magnesium oxide.
Simultaneously, in the present invention, the optical material for forming the boundary lens also can use with Mg
xCa
1-x(0.8＜x＜0.9) represented crystalline material.With Mg
xCa
1-xRepresented crystalline material is by the x value being set at than 0.8 big and little than 0.9, can make intrinsic birefringence inhibition less for making to use up when can guarantee than 1.8 big refractive indexes.
Below with example of the present invention, in conjunction with the accompanying drawings.Fig. 1 is the skeleton diagram of expression about the formation of the exposure device of embodiments of the invention.Setting coordinate is in Fig. 1: the benchmark optical axis AX that is parallel to projection optical system PL is the Z axle, and the paper that in the face perpendicular to benchmark optical axis AX, is parallel to Fig. 1 is the Y axle, and the paper perpendicular to Fig. 1 in perpendicular to the face of benchmark optical axis AX is the X axle.
The exposure device of accompanying drawing comprises the ArF quasi-molecule laser source for the light source 100 of supplying with illumination light (exposure light).The light that is penetrated from light source 100 is via lamp optical system IL, make form decide pattern reticle mask (reticle) the R illumination that overlaps.Light path between light source 100 and lamp optical system IL is sealed with sleeve (casing) (not shown); The space of the optical component of the reticle mask side from light source 100 to lamp optical system IL perhaps remains rough vacuum state with the low gas of the absorptivity of exposure light such as the inert gas replacement of helium or nitrogen etc.
Reticle mask R remains in parallel XY plane by reticle mask anchor clamps (reticle holder) RH on reticle mask platform RS (Reticl Stage).Form the pattern of transfer printing at reticle mask R, have long limit and have the area of the pattern of rectangular-shaped (slit (slit) shape) of minor face along the Y direction illuminated along directions X during area of the pattern is all.The effect of the drive system that reticle mask platform RS is omitted by accompanying drawing can two dimension be moved along reticle mask face (being the XY plane), and its position coordinates is to be made up of the interferometer RIF instrumentation that uses reticle mask moving lens RM and the mode of position control.
From the light of the formed pattern of middle mask R projection optical system PL, the reticle mask pattern image is formed on the wafer W as the photonasty substrate via reflection-refraction type.Wafer W remains parallel to the XY plane via wafer work platform (wafer jig) WT on crystal wafer platform WS.Yet; Rectangular-shaped field of illumination on reticle mask R is with the optics corresponding mode, having long limit and forming pattern image along the rectangular-shaped static exposure area (being effective knot picture zone of actual effect exposure area: projection optical system PL) that the Y direction has a minor face along directions X on wafer W.Crystal wafer platform WS can two dimension be moved along wafer face (being the XY plane) by the effect of the drive system that accompanying drawing is omitted, and its position coordinates is to be made up of the interferometer W1F instrumentation that uses wafer moving lens WM and the mode of position control.
Fig. 2 is the location diagram of expression formed rectangular-shaped static exposure area (being the actual effect exposure area) and benchmark optical axis on the wafer.In each embodiment of this example; As shown in Figure 2; With benchmark optical axis AX is the toroidal zone (image circle: Image Circle) in the IF, leaving a rectangular-shaped actual effect exposure area ER that the set positions of amount A has desired size from benchmark optical axis AX to the Y direction that the center has radius B.
At this, the directions X length of actual effect exposure area ER is LX, and its Y direction length is LY.Therefore; Though diagram is omitted; Be corresponding to rectangular-shaped actual effect exposure area ER on reticle mask R, the position formation of leaving corresponding to the distance of measuring A from axle to the Y direction from benchmark optical axis AX has the rectangular-shaped field of illumination (being the actual effect field of illumination) corresponding to size and the shape of actual effect exposure area ER.
The exposure device of this example is that the inside that constitutes projection optical system PL between the optical component (is planopaallel plate PI at each embodiment) that is disposed at reticle mask side in the optical component of optical system PL and the boundary lens Lb is constituted with the maintenance airtight conditions; The gas inside of projection optical system PL is with inert gas replacements such as helium or nitrogen; Or remain in rough vacuum state; And; Though narrow light path configuration reticle mask R between lamp optical system IL and the projection optical system PL and reticle mask platform RS etc.; But, or remain in rough vacuum state at inactive gas of sleeve (not shown) inner filling nitrogen that seals encirclement reticle mask R and reticle mask platform RS etc. or helium gas etc.
Fig. 3 is boundary lens and the formation skeleton diagram between wafer that is illustrated in each embodiment of this example.With reference to Fig. 3, boundary lens Lb has positive refractive power, and convex surface is to the reticle mask side.And; Dispose planopaallel plate Lp freely to insert to take out in the light path between boundary lens Lb and wafer W, the light path between light path between mirror circle lens Lb and planopaallel plate Lp and planopaallel plate Lp and wafer W is full of with liquid (medium) Lm that has than 1.5 big refractive indexes.
So, all scopes of the light path from light source 100 to wafer W form the absorbed hardly environment of exposure light.And for example above-mentioned, the static exposure area on field of illumination on the reticle mask R and the wafer W (being the actual effect exposure area) ER is at the rectangular shape of directions X with elongated extension.Therefore; Use drive system and interferometer one sides such as (RIF, WIF) to carry out the position control of reticle mask R and wafer W; One side is by using reticle mask platform RS and crystal wafer platform WS along the Y direction; And then make reticle mask R and wafer W with same moved further (scanning), on wafer W, make reticle mask pattern scan exposure for the width with the directions X size LX that equals actual effect exposure area ER and pinch shadow (shoot) zone (exposure area) of length with scanning amount (amount of movement) of corresponding wafer W.
Carry out in the exposure device of step-scan (step and scan) mode of scan exposure making the wafer W one side that simultaneously relatively moves for projection optical system PL; From scanning the exposure beginning to finishing; In the boundary lens Lb of projection optical system PL and the light path between wafer W, continue full of liquid Lm; The technology that for example can use International Publication number WO099/49504 communique to be disclosed, or the technology that is disclosed at japanese patent laid-open 10-303114 communique etc.
The technology that in International Publication number WO099/49504 communique, is disclosed; Be via supply pipe and discharge nozzle (nozzle) liquid that is adjusted to institute's fixed temperature to be supplied with the mode that is full of the light path between boundary lens Lb and wafer W, go up withdrawal liquid via recovery tube and flow nozzle from wafer W by fluid Supplying apparatus from fluid Supplying apparatus.On the one hand, the technology that japanese patent laid-open 10-303114 communique is disclosed is that with the mode that can accommodate liquid the wafer jig worktable to be constituted container-like, and central authorities' (in liquid) of bottom are kept wafer W by the vacuum suction determining positions within it.Reach in liquid with the lens barrel leading section of projection optical system PL, so that the mode that the optical surface of the wafer side of boundary lens Lb reaches in liquid constitutes again.
In each embodiment of this example; Aspheric surface is: the height of the vertical direction of optical axis is y; Position on the aspheric surface from the section on aspheric surface summit to height y is z along the distance (sag (sag)) of optical axis, and vertex curvature radius is r, and the circular cone coefficient is k; When n time asphericity coefficient is Cn, represent with following formula (a).In each embodiment, the lens face that is formed at the aspheric surface shape is to attach * number on the right side of face number.
z＝(y
2/r)/[1+{1-(1+k).y
2/r
2}
1/2]
+c
4.y
4+c
6.y
6+c
8.y
8+c
10.y
10
+c
12.y
12+c
14.y
14+... (a)
Again, in each embodiment of this example, projection optical system PL comprises the first knot image optical system G1, the second knot image optical system G2, and the 3rd knot image optical system G3.Wherein the first knot image optical system G1 is first intermediary image of pattern that is disposed at the reticle mask R of object plane (first face) in order to formation.The second knot image optical system G2 is in order to based on second intermediary image that forms the reticle mask pattern from the light of first intermediary image (being the secondary picture of reticle mask pattern of the picture of first intermediary image).The 3rd knot image optical system G3 is in order to based on from the light of the second intermediary image after image (reduced image of reticle mask pattern) at the wafer W formation reticle mask pattern that is disposed at image planes (second face).At this, the first knot image optical system G1 and the 3rd knot image optical system G3 are all dioptric system, and the second knot image optical system G2 is the reflection and refraction optical system that comprises concave mirror CM.
Again; Configuration first plane mirror (the first deflection mirror) M1 in the light path between the first knot image optical system G1 and the second knot image optical system G2, configuration second plane mirror (the second deflection mirror) M2 in the light path between the second knot image optical system G2 and the 3rd knot image optical system G3.So, the projection optical system PL in each embodiment is with the light from middle mask R, via the first knot image optical system G1, near first intermediary image of the formation reticle mask pattern first plane mirror M1.Secondly, from the light of first intermediary image, via the second knot image optical system G2, near second intermediary image of the formation reticle mask pattern second plane mirror M2.And,,, the after image of reticle mask pattern is formed on the wafer W via the 3rd knot image optical system G3 from the light of second intermediary image.
Again, among the projection optical system PL of each embodiment, the first knot image optical system G1 and the 3rd knot image optical system G3 have the optical axis AX1 and the optical axis AX3 of vertically linearity extension, and optical axis AX1 and optical axis AX3 are consistent with benchmark optical axis AX.On the one hand, the second knot image optical system G2 has the optical axis AX2 that the along continuous straight runs linearity extends (perpendicular to benchmark optical axis AX).So, reticle mask R, wafer W full optical component that constitutes the first knot image optical system G1 and the full optical component that constitutes the 3rd knot image optical system G3 is the edge and to be that surface level is disposed at parallel to each other for the face of gravity direction orthogonal.And the first plane mirror M1 and the second plane mirror M2 respectively have the reflecting surface that sets with the angle that becomes 45 degree for the reticle mask face, and the first plane mirror M1 and the second plane mirror M2 constitute one with an optical component.Again, in each embodiment, projection optical system PL is that the both sides in object side and picture side constitute with the heart far away generally.
First embodiment
Fig. 4 representes the lens pie graph about the projection optical system of first embodiment of this example.With reference to Fig. 4,, be in regular turn by planopaallel plate P1 from middle mask side about the knot of first among the projection optical system PL of first instance image optical system G1; With positive concave-convex lens (meniscus lens) L11 of convex surface to the reticle mask side; With the positive concave-convex lens L12 of convex surface, with the positive lens L13 of aspheric surface, with the positive concave-convex lens L14 of convex surface to the reticle mask side to the wafer side to the reticle mask side; With the negative meniscus lens L15 of concave surface to the reticle mask side; Concave surface makes the positive concave-convex lens L17 of the concave surface of aspheric surface shape to the reticle mask side to the negative meniscus lens L16 of reticle mask side, makes the positive concave-convex lens L18 of concave surface to the reticle mask side; Make the biconvex lens L19 of the convex surface of aspherical shape, and the concave surface of aspherical shape is to the formations such as positive concave-convex lens L110 of wafer side to the wafer side.
Again; The second knot image optical system G2; Be along the carrying out of light toward journey from middle mask side (being light incident side) in regular turn by the negative meniscus lens L21 of the concave surface that makes aspherical shape to the reticle mask side; Make the negative meniscus lens L22 of concave surface, and concave surface is constituted to the concave mirror CM of reticle mask side to the reticle mask side.Again, the 3rd knot image optical system G3 is in regular turn by the positive concave-convex lens L31 that makes concave surface to the reticle mask side from middle mask side; Biconvex lens L32, biconvex lens L33 makes the positive lens L34 of aspheric surface to the wafer side; Make the biconcave lens L35 of the concave surface of aspherical shape, make the negative meniscus lens L36 of the concave surface of aspherical shape, biconvex lens L37 to the wafer side to the reticle mask side; Make the lens L38 of aspheric surface, make the negative meniscus lens L39 of the concave surface of aspherical shape, biconvex lens L310 to the reticle mask side to the reticle mask side; Biconvex lens L311, biconvex lens L312, aperture diaphragm AS; Make the positive concave-convex lens L313 of the concave surface of aspherical shape to the wafer side; Make the positive concave-convex lens L314 of the concave surface of aspherical shape, make the plane, and planopaallel plate Lp constitutes to the plano-convex lens L315 of wafer side (boundary lens Lb) to the wafer side.
In first embodiment, in the light path between light path between boundary lens Lb and planopaallel plate Lp and planopaallel plate Lp and wafer W, be full of and use up (exposure light) ArF PRK for making (wavelength X=193.306nm) has the liquid Lm of 1.64 refractive indexes.For this kind liquid Lm, can use glycerine (glycerol) (CH
2[OH] CH [OH] CH
2[OH]) or heptane (heptane) (C
7H
16) etc.Again; In first embodiment; For the plano-convex lens 315 of boundary lens Lb to use up magnesium oxide (MgO) and form with 2.1 refractive indexes for making; Planopaallel plate Lp is by using up the calcium oxide (CaO) with 2.7 refractive indexes and form for making, and other transmittance member is by using up the quartz (SiO with 1.5603261 refractive indexes for making
2) form.
In following table 1, give an example about the specifications value of the projection optical system PL of first embodiment.In table 1, each symbolic representation: λ is the centre wavelength of exposure light.β is the size of projection multiplying power (system-wide knot is as multiplying power); NA is picture side (wafer side) numerical aperture; B is the radius of the image circle IF on wafer W; A is measuring from axle of actual effect exposure area ER, and LX is the size (size on long limit) of the directions X of ER along the actual effect exposure area, and LY is the size (size of minor face) along the Y direction in actual effect zone.
Again; The face number be from as the reticle mask face of object plane (first face) along to the order to the face of reticle mask side of carrying out the path as the light of the wafer face of image planes (second face); R is that (aspheric occasion is a vertex curvature radius: mm) for the radius-of-curvature of each face; D is that the axle of each face upward is face (mm) at interval at interval, and n is the refractive index for centre wavelength.And, face at interval d be whenever reflex time with its sign change.Therefore, face at interval the symbol of d be from reflecting surface to the light path of concave mirror CM of the first plane mirror M1 and from the second plane mirror M2 to the light path of image planes for negative, in other light path for just.
Then, the first knot image optical system G1 be to the reticle mask side with the radius-of-curvature of convex surface for just, to the reticle mask side with the radius-of-curvature of concave surface for bearing.The second knot image optical system G2 be along the carrying out of light toward journey to light incident side (reticle mask side) with the radius-of-curvature of concave surface for just, to light incident side with the radius-of-curvature of convex surface for bearing.The 3rd knot image optical system G3 be to the reticle mask side with the radius-of-curvature of concave surface for just, to the reticle mask side with the radius-of-curvature of convex surface for bearing.In the souvenir method of table 1, also be same to later table 2.
Table 1
(main specifications)
λ＝193.306nm
β＝1/4
NA＝1.5
B＝15.4mm
A＝3mm
LX＝26mm
LY＝5mm
(optical component specifications)
Face number r d n optical component
(reticle mask face) 56.505360
1 ∞ 8.000000 1.5603261 (P1)
2 ∞ 3.000000
3 332.11336 23.093116 1.5603261 (L11)
4 21941.06735 28.154649
5 332.11224 21.296182 1.5603261 (L12)
6 522.44465 153.940083
7 165.15684 67.515709 1.5603261 (L13)
8
＊ -100000.00000 1.239165
9 123.01479 57.000570 1.5603261 (L14)
10 178.35751 72.908214
11 -111.70020 58.091111 1.5603261 (L15)
12 -185.38994 67.381391
13 -110.31593 12.000000 1.5603261 (L16)
14 -164.47858 7.017118
15
＊-2506.8939660.000000 1.5603261(L17)
16 -178.26344 10.898723
17 -181.03000 60.000000 1.5603261 (L18)
18 -180.54715 1.193658
19 540.03108 39.864236 1.5603261 (L19)
20
＊-1368.71929 1.000000
21 221.55125 32.784952 1.5603261 (L110)
22
＊3443.7633469.000000
23 ∞ -224.625406 (M1)
24
＊138.38475 -12.500000 1.5603261(L21)
25 838.03169 -41.894757
26 122.79597 -18.000000 1.5603261 (L22)
27 305.69094 -32.611741
28 166.36416 32.611741 (CM)
29 305.69094 18.000000 1.5603261 (L22)
30 122.79597 41.894757
31 838.03169 12.500000 1.5603261 (L21)
32
＊138.38475 224.625406
33 ∞ -64.048895 (M2)
34 3037.95158 -31.356823 1.5603261 (L31)
35 284.78296 -55.563654
36 -3232.21039 -44.050510 1.5603261 (L32)
37 546.41895 -14.472099
38 -373.24330 -60.000000 1.5603261 (L33)
39 4128.51422 -102.814640
40 -235.89294 -60.000000 1.5603261 (L34)
41
＊2000.00000-34.617333
42
＊205.10801 -12.000000 1.5603261(L35)
43 -175.46402 -30.414779
44 -663.82879 -21.841705 1.5603261 (L36)
45
＊-186.86524-9.073172
46 -341.50340 -54.412642 1.5603261 (L37)
47 327.31115 -8.231048
48
＊∞-22.9949231.5603261 (L38)
49 681.92829 -37.021427
50
＊201.26070 -12.2430051.5603261 (L39)
51 467.77517 -5.348484
52 -1841.61164 -57.556691 1.5603261 (L310)
53 391.71750 -1.000000
54 -1066.37400 -48.185489 1.5603261 (L311)
55 634.92808 -1.000000
56 -286.21667 -65.944769 1.5603261 (L312)
57 3644.46643 -1.000000
58 ∞ -1.000000 (AS)
59 -244.44879 -78.335946 1.5603261 (L313)
60
＊-6072.75156 -1.000000
61 -103.38714 -47.063379 1.5603261 (L314)
62
＊-181.11841-1.000000
63 -88.30984 -52.565704 2.1 (L315：Lb)
64 ∞ -3.000000 1.64 (Lm)
65 ∞ -11.571429 2.7 (Lp)
66 ∞ -3.000000 1.64 (Lm)
(wafer face)
(aspheric surface data)
8
k＝0
C
4＝-1.58520×10
-9 C
6＝2.19792×10
-12
C
8＝-1.08598×10
-16 C
10＝1.16657×10
-22
C
12＝3.05171×10
-25 C
14＝-1.41802×10
-29
C
16＝2.13247×10
-34
15
k＝0
C
4＝-3.23042×10
-8 C
6＝1.44765×10
-13
C
8＝-5.17111×10
-17 C
10＝2.46719×10
-21
C
12＝-1.31638×10
-25 C
14＝6.62583×10
-30
C
16＝-1.73316×10
-34
20
k＝0
C
4＝8.69903×10
-9 C
6＝-4.13871×10
-13
C
8＝-2.61569×10
-19 C
10＝-5.26670×10
-22
C
12＝4.74002×10
-26 C
14＝-1.67878×10
-30
C
16＝2.55280×10
-35
22
k＝0
C
4＝-3.37303×10
-10 C
6＝5.84613×10
-13
C
0＝-1.34897×10
-17 C
10＝8.67441×10
-22
C
12＝-8.02773×10
-26 C
14＝3.72367×10
-30
C
16＝-6.75336×10
-35
24 and 32 (with one side)
k＝0
C
4＝-9.33259×10
-8 C
6＝-4.93088×10
-13
C
8＝-1.23800×10
-16 C
10＝-7.97756×10
-21
C
12＝5.17758×10
-24 C
14＝-7.83227×10
-28
C
16＝5.04843×10
-32
41
k＝0
C
4＝-3.62270×10
-8 C
6＝1.11799×10
-12
C
8＝-4.70237×10
-17 C
10＝9.55647×10
-22
C
12＝-1.95001×10
-26 C
14＝-2.23863×10
-31
C
16＝1.60578×10
-35
42
k＝0
C
4＝-5.79158×10
-8 C
6＝1.53532×10
-12
C
8＝-1.55397×10
-16 C
10＝9.29402×10
-21
C
12＝-3.21639×10
-25 C
14＝5.30457×10
-30
C
16＝-1.52634×10
-35
45
k＝0
C
4＝7.07396×10
-8 C
6＝-4.48767×10
-13
C
8＝4.51716×10
-17 C
10＝-3.07038×10
-21
C
12＝1.78922×10
-25 C
14＝-4.98907×10
-30
C
16＝-1.23423×10
-35
48
k＝0
C
4＝4.07377×10
-8 C
6＝6.93833×10
-13
C
8＝3.73140×10
-17 C
10＝7.13911×10
-22
C
12＝-8.82950×10
-26 C
14＝7.79608×10
-30
C
16＝-4.19073×10
-34
50
k＝0
C
4＝1.23943×10
-8 C
6＝-6.49568×10
-13
C
8＝1.52799×10
-17 C
10＝-5.31249×10
-22
C
12＝-7.71608×10
-27 C
14＝-1.92564×10
-32
C
16＝3.48432×10
-35
60
k＝0
C
4＝-2.74864×10
-8 C
6＝1.70444×10
-12
C
8＝-8.65407×10
-17 C
10＝3.89488×10
-22
C
12＝4.18042×10
-26 C
14＝1.17634×10
-29
C
16＝-1.41480×10
-33 C
18＝6.18963×10
-38
C
20＝-1.05698×10
-42
62
k＝0
C
4＝-1.25568×10
-7 C
6＝-1.56676×10
-11
C
8＝4.40757×10
-16 C
10＝-1.65332×10
-19
C
12＝-2.56855×10
-24 C
14＝-1.64472×10
-28
C
16＝-1.05509×10
-30 C
18＝2.55094×10
-34
C
20＝-2.49917×10
-38
(conditional respective value)
Yi＝15.4mm
Fb＝131.662mm
TC＝11.571429mm
TM＝52.565704mm
(1)Yi/Fb＝0.117
(2)TC/TM＝0.220
Fig. 5 is the lateral aberration figure that is illustrated in first embodiment.In aberration diagram, Y is the expression image height.Can know that from the aberration diagram of Fig. 5 in first embodiment, (26mm * 5mm) is for the also well revisal of PRK aberration of wavelength 193.306nm though guarantee very large picture side numerical aperture (NA=1.5) and bigger actual effect exposure area ER.
Second embodiment
Fig. 6 is the lens pie graph of expression about the projection optical system of second embodiment of this example.With reference to Fig. 6,, be in regular turn by planopaallel plate P1 from middle mask side at the first knot image optical system G1 about the projection optical system PL among second embodiment; Make the positive concave-convex lens L11 of convex surface to the reticle mask side; Make the positive concave-convex lens L12 of convex surface, make the positive lens L13 of aspheric surface, make the positive concave-convex lens L14 of convex surface to the reticle mask side to the wafer side to the reticle mask side; Make the negative meniscus lens L15 of concave surface to the reticle mask side; Make the negative meniscus lens 16 of concave surface, make the positive concave-convex lens L17 of the concave surface of aspherical shape, make the positive concave-convex lens L18 of concave surface to the reticle mask side to the reticle mask side to the reticle mask side; Make the biconvex lens L19 of the convex surface of aspherical shape, and make the formations such as positive concave-convex lens L110 of the concave surface of aspherical shape to the wafer side to the wafer side.
Again; The second knot image optical system G2; Be along the carrying out of light toward journey from middle mask side (being light incident side) in regular turn by the negative meniscus lens L21 of the concave surface that makes aspherical shape to the reticle mask side; Make the negative meniscus lens L22 of concave surface, and make the formations such as concave mirror CM of concave surface to the reticle mask side to the reticle mask side.Again, the 3rd knot image optical system G3 is in regular turn by the positive concave-convex lens 31 that makes concave surface to the reticle mask side from middle mask side; Biconvex lens 32, biconvex lens L33 makes the positive lens L34 of aspheric surface to the wafer side; Make the biconcave lens L35 of the concave surface of aspherical shape, make the negative meniscus lens L36 of the concave surface of aspherical shape, biconvex lens L37 to the wafer side to the reticle mask side; Make the lens L38 of aspheric surface, make the negative meniscus lens L39 of the concave surface of aspherical shape, biconvex lens L310 to the reticle mask side to the reticle mask side; Biconvex lens L311, biconvex lens L312, aperture diaphragm AS; Make the positive concave-convex lens L313 of the concave surface of aspherical shape to the wafer side; Make the positive concave-convex lens L314 of the concave surface of aspherical shape, make the plane to the plano-convex lens L315 of wafer side (boundary lens Lb) to the wafer side, and formation such as planopaallel plate Lp.
Second embodiment and first instance are same; In the light path between light path between boundary lens Lb and planopaallel plate Lp and planopaallel plate Lp and wafer W; (the liquid Lm that wavelength X=193.306nm) has 1.64 refractive indexes can use glycerine (glycerol) (CH to be full of the ArF PRK of using up (exposure light) for making
2[OH] CH [OH] C2
2[OH]) or heptane (C
7H
16) etc.But; Second embodiment with the first embodiment difference is; For the plano-convex lens L315 of boundary lens Lb and planopaallel plate Lp by using up magnesium oxide (MgO) and form with 2.1 refractive indexes for making; Planopaallel plate P1 among the first knot image optical system G1 is by using up the calcium oxide (CaO) with 2.7 refractive indexes and form for making, and other transmittance member is to use up the quartz (SiO with 1.5603261 refractive indexes for making
2) form.In the table 2 below, enumerate specifications value about the projection optical system PL of second embodiment.
Table 2
(main specifications)
λ＝193.306nm
β＝1/4
NA＝1.5
B＝15.4mm
A＝3mm
LX＝26mm
LY＝5mm
(optical component each item size)
Face number r d n optical component
(reticle mask face) 61.488045
1 ∞ 8.000000 2.7 (P1)
2 ∞ 3.000000
3 343.72875 22.736495 1.5603261 (L11)
4 11320.51072 27.609647
5 315.84611 22.906622 1.5603261 (L12)
6 519.35674 152.758756
7 166.25201 67.148030 1.5603261 (L13)
8＊-100000.00000 1.803406
9 122.90686 56.899748 1.5603261 (L14)
10 176.71063 72.456273
11 -112.24882 57.183077 1.5603261 (L15)
12 -177.64807 69.574199
13 -109.24072 12.000000 1.5603261 (L16)
14 -160.05421 8.713899
15＊ -1319.76614 60.0000001.5603261(L17)
16 -179.95005 6.186466
17 -184.59624 60.000000 1.5603261 (L18)
18 -181.38305 1.000000
19 522.39321 37.296564 1.5603261 (L19)
20＊ -1237.27157 1.000000
21 226.65110 32.704191 1.5603261 (L110)
22＊ 3443.7633469.000000
23 ∞ -225.248400 (M1)
24＊135.27205-12.5000001.5603261(L21)
25 763.23196 -40.860891
26 123.71776 -18.000000 1.5603261 (L22)
27 308.39695 -33.707290
28 166.36433 33.707290 (CM)
29 308.39694 18.000000 1.5603261 (L22)
30 123.71776 40.860891
31 763.23196 12.500000 1.5603261 (L21)
32＊135.27205225.248400
33 ∞ -64.048895 (M2)
34 3037.95158 -31.291024 1.5603261 (L31)
35 283.28735 -55.219198
36 -4310.65810 -39.964911 1.5603261 (L32)
37 529.81361 -10.823066
38 -357.26988 -60.000000 1.5603261 (L33)
39 5041.57763 -103.073057
40 -234.74259 -60.000000 1.5603261 (L34)
41＊2000.00000 -32.118738
42＊203.78344-12.0000001.5603261(L35)
43 -174.01269 -30.859539
44 -677.34580 -23.155082 1.5603261 (L36)
45＊-168.83312 -9.024762
46 -340.71202 -53.167176 1.5603261 (L37)
47 347.29465 -9.020543
48＊∞ -22.5238661.5603261(L38)
49 620.09458 -35.869134
50＊203.91268-12.0000001.5603261(L39)
51 479.50254 -5.422099
52 -1616.06413 -57.359057 1.5603261 (L310)
53 381.69065 -1.221176
54 -2670.87945 -46.904209 1.5603261 (L311)
55 498.65890 -1.000000
56 -280.67485 -66.851585 1.5603261 (L312)
57 4288.89930 -1.000000
58 ∞ -1.000000 (AS)
59 -242.42469 -78.543309 1.5603261 (L313)
60＊-4109.30758 -1.000000
61 -103.81625 -48.013323 1.5603261 (L314)
62＊-179.28408-1.000000
63 -87.34389 -39.922826 2.1 (L315：Lb)
64 ∞ -3.000000 1.64 (Lm)
65 ∞ -20.000000 2.1 (Lp)
66 ∞ -3.000000 1.64 (Lm)
(wafer face)
(aspheric surface data)
8
k＝0
C
4＝-2.38700×10
-9 C
6＝2.19848×10
-12
C
8＝-1.06625×10
-16 C
10＝3.79339×10
-24
C
12＝3.05491×10
-25 C
14＝-1.40049×10
-29
C
16＝2.07573×10
-34
15
k＝0
C
4＝-3.22668×10
-8 C
6＝1.90212×10
-13
C
8＝-4.94924×10
-17 C
10＝2.00126×10
-21
C
12＝-1.00360×10
-25 C
14＝5.70267×10
-30
C
16＝-1.64436×10
-34
20
k＝0
C
4＝7.78221×10
-9 C
6＝-2.84918×10
-13
C
8＝-7.27759×10
-18 C
10＝2.72700×10
-22
C
12＝-1.19289×10
-26 C
14＝5.92797×10
-31
C
16＝-1.03550×10
-35
22
k＝0
C
4＝-8.17419×10
-10 C
6＝4.07134×10
-13
C
8＝2.20418×10
-18 C
10＝-6.81433×10
-22
C
12＝3.76576×10
-26 C
14＝-1.34115×10
-30
C
16＝2.31166×10
-35
24 and 32 (with one side)
k＝0
C
4＝-9.44616×10
-8 C
6＝-4.87959×10
-13
C
8＝-1.31681×10
-16 C
10＝-4.35400×10
-21
C
12＝4.33387×10
-24 C
14＝-7.03794×10
-28
C
16＝4.83506×10
-32
41
k＝0
C
4＝-3.74782×10
-8 C
6＝1.18364×10
-12
C
8＝-5.09800×10
-17 C
10＝1.01796×10
-21
C
12＝-1.96390×10
-26 C
14＝-4.49365×10
-31
C
16＝2.91126×10
-35
42
k＝0
C
4＝-5.94775×10
-8 C
6＝1.58659×10
-12
C
8＝-1.59483×10
-16 C
10＝9.50762×10
-21
C
12＝-3.26529×10
-25 C
14＝5.41917×10
-30
C
16＝-1.81319×10
-35
45
k＝0
C
4＝7.05058×10
-8 C
6＝-4.46468×10
-13
C
8＝4.69144×10
-17 C
10＝-3.15707×10
-21
C
12＝1.81100×10
-25 C
14＝-4.72547×10
-30
C
16＝-2.22284×10
-35
48
k＝0
C
4＝4.26237×10
-8 C
6＝6.77863×10
-13
C
8＝3.83997×10
-17 C
10＝6.09548×10
-22
C
12＝-7.33821×10
-26 C
14＝6.91048×10
-30
C
16＝-4.01591×10
-34
50
k＝0
C
4＝1.36637×10
-8 C
6＝-6.02782×10
-13
C
8＝1.47586×10
-17 C
10＝-4.85443×10
-22
C
12＝-7.16685×10
-27 C
14＝6.60114×10
-32
C
16＝3.92846×10
-35
60
k＝0
C
4＝-2.75070×10
-8 C
6＝1.72882×10
-12
C
8＝-8.71586×10
-17 C
10＝3.77295×10
-22
C
12＝3.87257×10
-26 C
14＝1.18131×10
-29
C
16＝-1.40804×10
-33 C
18＝6.18364×10
-38
C
20＝-1.06817×10
-42
62
k＝0
C
4＝-1.29877×10
-7 C
6＝-1.63482×10
-11
C
8＝5.14480×10
-16 C
10＝-2.06381×10
-19
C
12＝1.18222×10
-24 C
14＝-7.07065×10
-29
C
16＝-1.26067×10
-30 C
18＝2.97954×10
-34
C
20＝-2.90634×10
-38
(conditional respective value)
Yi＝15.4mm
Fb＝130.222mm
(1)Yi/Fb＝0.118
Fig. 7 is illustrated in the lateral aberration figure of second embodiment.In aberration diagram, Y is the expression image height.Can know from the aberration diagram of Fig. 7; Also same at second embodiment with first instance; Though (26mm * 5mm) is for the also good revisal of PRK aberration of wavelength 193.306nm to guarantee very large picture side numerical aperture (NA=1.5) and bigger actual effect exposure area ER.
So; In each embodiment; It is ArF PRK for wavelength 193.306nm; When guaranteeing that 1.5 height is as the side numerical aperture, can guarantee actual effect exposure area (static exposure area) ER of the rectangular shape of 26mm * 5mm, for example can be in the rectangular-shaped exposure area of 26mm * 33mm with circuit pattern with the high image resolution scan exposure.
Again, in each embodiment, be in the light path between boundary lens Lb and wafer W, planopaallel plate Lp takes out configuration freely to insert.Therefore; Liquid Lm is contaminated by photoresist of coating wafer W etc.; Also can be by the effect of the tradable planopaallel plate between between boundary lens Lb and wafer W (generally being the optical component that does not have refracting power generally) Lp, can be effectively to prevent the pollution to the picture side optical surface of boundary lens Lb by contaminated liquid Lm.
In first embodiment, form planopaallel plate Lp, form planopaallel plate Lp by magnesium oxide in a second embodiment by calcium oxide.But be not to be defined in this, can use fluorite (CaF yet
2) or the suitable optical material of quartz etc. form planopaallel plate Lp.But, high for reaching as for the purpose of the side numerical aperture, form planopaallel plate Lp than this optical material and be advisable to have as side numerical aperture high index.For the purpose of the heavy caliberization of the optical component of avoiding constituting projection optical system, form planopaallel plate Lp with the optical material of the big refractive index of the liquid Lm that connects near having and be advisable again.
Again, in first embodiment, be to use the magnesium oxide of the crystalline material that belongs to cubic system to form boundary lens Lb, use the calcium oxide of the crystalline material that belongs to cubic system to form planopaallel plate Lp.Then, make the magnesian intrinsic birefringence that forms boundary lens Lb, offset with the intrinsic birefringence of the calcium oxide that forms planopaallel plate Lp, to reduce its influence.On the other hand, be to use magnesium oxide to form boundary lens Lb and planopaallel plate Lp in a second embodiment, use calcium oxide to form planopaallel plate P1.Then, make the magnesian intrinsic birefringence that forms boundary lens Lb and planopaallel plate Lp, offset, reduce its influence with the intrinsic birefringence of the calcium oxide that forms planopaallel plate P1.
On general; The projection optical system of liquid immersion type is to form the boundary lens with the crystallization that belongs to cubic system (for example magnesium oxide or calcium oxide); Make the intrinsic birefringence of the crystallization that forms the boundary lens; Intrinsic birefringence with the formed crystal optics element of crystallization (for example calcium oxide or magnesium oxide) (the transmittance member different with the boundary lens) that belongs to cubic system offsets, to reduce its influence.This kind occasion; Set (clocking) method by so-called crystallographic axis gyrobearing; The crystal optics element is to make first crystallographic axis be set at the optical axis of rough unanimity in projection optical system; The boundary lens are to make second crystallographic axis be set at the optical axis of rough unanimity in projection optical system; With the crystallographic axis orientation of the different crystal optics element of first crystallographic axis,, be so that belong to the mode that the intrinsic birefringent influence that crystallization had of cubic system reduces and be set at suitable with the crystallographic axis orientation of the different boundary lens of second crystallographic axis.
At this, calcium oxide and magnesium oxide are the crystalline materials that is similarly regular system (cubic system) with fluorite, can be by offsetting intrinsic birefringent influence with the same crystallographic axis gyrobearing establishing method of the occasion of fluorite.Below, simple declaration is for the crystallographic axis gyrobearing establishing method of the occasion of fluorite.The first crystallographic axis gyrobearing establishing method is that the optical axis that makes a pair of fluorite is consistent with crystallographic axis [111] (or crystallographic axis optically of equal value with crystallographic axis [111]), and is that the center makes a pair of fluorite lens only with about 60 degree of relative rotation with the optical axis.
The second crystallographic axis gyrobearing establishing method is that the optical axis that makes a pair of fluorite lens is consistent with crystallographic axis [100] (or crystallographic axis optically of equal value with this crystallographic axis [100]), and is that the center makes a pair of fluorite lens only with about 45 degree of relative rotation with the optical axis.The 3rd crystallographic axis gyrobearing establishing method is, the optical axis that makes a pair of fluorite lens and crystallographic axis [110] (or with this crystallographic axis [110] at optics crystallographic axis of equal value) are consistent, and is that the center makes a pair of fluorite lens only with about 90 degree of relative rotation with the optical axis.For the position relation of the crystallographic axis that makes a pair of fluorite lens by the suitable detailed situation of setting the method that the intrinsic birefringent influence that makes fluorite reduces, but reference example such as International Publication WO2003/007045 number (or United States Patent (USP) open US2003/0053036A number) communique etc.
Again, the thickness of the optical axis direction of the thickness of the optical axis direction of boundary lens and crystal optics element is so that belong to the mode that all intrinsic birefringent influences of the crystallization of cubic system reduce and be set at suitable.Here as above-mentioned; For example for calcium oxide and magnesium oxide; Because intrinsic birefringent symbol and absolute magnitude are different; When combination calcium oxide and magnesium oxide make intrinsic birefringent influence disappear the effect revisal to hang down, will be set at suitable with each rough ratio in the inverse of the intrinsic birefringence value that inverse and magnesium oxide were had of the intrinsic birefringence value that calcium oxide was had by the thickness of the optical element that thickness and magnesium oxide constituted of the optical element that calcium oxide constituted.
, though be suitable for the present invention for the optical system of reflection-refraction type, be not to be defined in this, for the yet applicable the present invention of the projection optical system of refractive at each above-mentioned embodiment.But; The reflection-refraction type projection optical system that shown in each embodiment, comprises a concave mirror at least; For example by the effect of concave mirror; In good revisal chromatic aberation, satisfy Petzval (Petzval) condition easily and make curvature of the image, and possibly make the miniaturization of optical system with good revisal.
Be advisable with the conditional (3) below satisfying by three knot projection optical systems that image optical system constituted like each above-mentioned embodiment.In conditional (3), MA be all knots of projection optical system as multiplying power, M3 is that the knot of the 3rd knot image optical system G3 is as multiplying power.
0.5＜|M3/MA|＜1 (3)
During the formula that satisfies condition (3), the angular range of light that is incident in the reflectance coating of the first plane mirror M1 and the second plane mirror M2 suppresses for less, and then can make and result from the knot of the phase change before and after the reflection and suppress for less as the reduction of performance.
On concrete, in first embodiment, all knots of projection optical system are 1/4 as multiplying power MA; The knot of the 3rd knot image optical system G3 is 0.204 as multiplying power M3, the formula that satisfies condition (3), on the other hand; In a second embodiment; The all knot of projection optical system is that the knot of 1/4, the three knot image optical system G3 is 0.212 as multiplying power M3 as multiplying power MA, the formula that satisfies condition (3).
Secondly, for the second embodiment form of exposure device of the present invention, one side is with reference to description of drawings.Fig. 8 representes the summary pie graph about the exposure device EX of second example of the present invention; In Fig. 8, exposure device EX comprises mask platform (mask stage) MST, substrate stage PST1, instrumentation platform PST2, lamp optical system IL, projection optical system PL and control device CONT.Wherein, mask platform MST is in order to support mask M and possibly move.Substrate stage PST1 has the substrate fixture PH of support substrate P and possibly move, and on substrate fixture, keeps substrate P.Instrumentation platform PST2 is in order to the measuring instrument of the instrumentation that keeps carrying out about exposure-processed, and it is independent of substrate stage PST1 and possibly moves.Lamp optical system IL uses so that support to throw light on exposure light EL in the mask M of mask platform MST.Projection optical system PL with so that the pattern image projection of the mask M that is thrown light on exposure light EL in the substrate P that is supported in substrate stage PST1.Control device CONT is in order to be all together all actions of control exposure device EX.Represent display device DY in succession at control device CONT about the information of exposure-processed.
The exposure device EX of this example is for exposure wavelength substantially being shortened make when promoting resolution the depth of focus substantially for the purpose of the broadness; Be suitable for the liquid immersion exposure apparatus of immersion method; Comprise the first liquid dipping machine structure 1; Among the most optical element LS1～LS7 that constitute projection optical system PL, approach to form first liquid that is full of with the first liquid LQ1 between following T1 and the substrate P of the first optical element LS1 of image planes of projection optical system PL most and soak area L R1.The first liquid dipping machine structure 1 is to comprise the following T1 that makes the first liquid LQ1 be supplied in the first optical element LS1 and the first liquid feed mechanism 10 between substrate P, with the first liquids recovery mechanism 20 that will reclaim with the first liquid LQ1 that the first liquid feed mechanism 10 is supplied with.The action of the first liquid dipping machine structure 1 is to be controlled by control device CONT.
Again, near the image planes side of projection optical system PL, concrete going up near the optical element LS1 of the image planes side end of projection optical system PL, configuration constitutes the nozzle arrangement 70 of the part of the first liquid dipping machine structure 1.Nozzle arrangement 70 is the leading section set annular components of mode on every side to center on projection optical system PL in the top of substrate P (substrate stage PST).
Again; Exposure device EX comprises the second liquid dipping machine structure 2; It is between the first optical element LS1 and the second optical element LS2 inferior to the image planes that approach projection optical system PL of the first optical element SL1, forms second liquid that is full of with the second liquid LQ2 and soaks area L R2.The second optical element LS2 is disposed at the top of the first optical element LS1, and the top T2 of the first optical element SL1 disposes with the mode with the following T3 subtend of the second optical element LS2.The second liquid dipping machine structure 2 comprises supplies with the second liquid feed mechanism 30 between the first optical element LS1 and the second optical element LS2 with the second liquid LQ2, with the second liquids recovery mechanism 40 that makes the second liquid LQ2 recovery of being supplied with the second liquid feed mechanism 30.The action of the second liquid dipping machine structure 2 is to be controlled by control device CONT.
The exposure device EX of this example adopts and makes first liquid soak the part of area L R1 on substrate P to soak mode with the local liquid that the part forms.Again, second liquid of exposure device EX soak area L R2 also on the first optical element LS1 part of T2 form with the part.Exposure device EX at least the pattern image with mask M be needed on the substrate P during; Use the first liquid dipping machine structure 1; When between the substrate P that the first optical element LS1 and its image planes side are disposed, forming first liquid that is full of the first liquid LQ1 and soak area L R1; Use the second liquid dipping machine structure 2, between the first optical element LS1 and the second optical element LS2, form second liquid that is full of the second liquid LQ2 and soak area L R2.
Be provided with at instrumentation platform PST2 and observe first liquid respectively and soak the finder 60 that area L R1 and second liquid soak the state of area L R2 again.Finder 60 is arranged at the inside of instrumentation platform PST2.
In this example, be to use for exposure device EX mask M and substrate P are combined into example explanation simultaneously to make the formed pattern exposure of mask M with moved further in the field of the scanning exposure apparatus so-called scanning stepper (Scanning stepper) of substrate P with different direction (contrary direction) one side each other in the direction of scanning.In following explanation; In surface level, make the synchronous moving direction (direction of scanning) of mask M and substrate P be X-direction; Direction with the X-direction orthogonal in surface level is Y direction (non-direction of scanning), is Z-direction perpendicular to X axle and the Y direction direction consistent with the optical axis AX of projection optical system PL.Again, X axle, Y axle and the axial rotation of Z (inclination) direction respectively are θ X, θ Y, and θ Z direction.Even, be included in this what is called " substrate " and be coated with photoresist on the semiconductor crystal wafer, " mask " is included in the reticle mask (reticle) that forms the element pattern of reduced projection on the substrate.
Lamp optical system IL comprises exposure light source, optical integrator (optical integrator), condenser lens (condenser lens), relay lens (relay lens) system, and visual field aperture etc.Wherein, Exposure light source is in order to penetrate exposure light EL; Optical integrator is in order to will be from the illumination homogenising of the exposure light EL that exposure light source penetrated; Condenser lens, relay lens system are in order to will be from the exposure light EL optically focused of optical integrator, and visual field aperture is in order to set the field of illumination on mask M by exposure light EL.On the mask M to decide the field of illumination be with the exposure light EL of uniform Illumination Distribution illumination by lamp optical system IL.For the extreme ultraviolet light (DUV light) of bright line (bright line) (g line, h line, i line) that for example uses the ultraviolet territory of penetrating from mercury vapor lamp from the exposure light that exposure light source penetrated and KrF PRK (excimer laser) (wavelength 248nm) etc. or, the vacuum-ultraviolet light (VUV light) of ArF PRK (wavelength 193nm) and F2 laser (wavelength 157nm) etc. etc.Use the ArF PRK at present embodiment.
In this example,, and,, for example use the liquid of refractive index more than 1.6 with the high liquid of refractive index from the second liquid LQ2 that the second liquid feed mechanism 30 is supplied with for the first liquid LQ1 that is supplied with from the first liquid feed mechanism 10.In the present embodiment form, the first liquid LQ1 and the second liquid LQ2 are same liquid.For this kind high refractive index liquid, for example can use glycerine (glycerol) (CH
2[OH] CH [OH] CH
2[OH]) or heptane (heptane) is (C7H16) etc.Also can use and add H again,
+, Cs
-, K
+, Cl
-, SO
4 2-, PO
4 2-The water, isopropyl alcohol (isopropanol), normal hexane (hexane), decane (decane) etc. of water, aluminum mixture oxide microparticle.
Mask platform MST keeps mask M and removable, in the plane perpendicular to the optical axis AX of projection optical system PL, promptly can two dimension in the XY plane moves and can smallly rotate in θ Z direction.Mask platform MST drives by comprising the mask stage driving MSTD that linear motor etc. constituted.Mask stage driving MSTD is controlled by control device CONT.On mask platform MST, moving lens 52 is set.Again, subtend is to establish laser interferometer 53 in the position of moving lens 52.The position of the two-dimensional directional of the mask M on the mask platform MST, rotation angle be by laser interferometer 53 with real-time (real time) instrumentation, the instrumentation result is output in control device CONT.Control device CONT is based on the instrumentation result of laser interferometer 53, and mask stage driving MSTD is driven to prop up the determining positions of the mask M that is held in mask platform MST.
The pattern that projection optical system PL makes mask M with decided projection multiplying power β projection exposure in substrate P; Most optical element LS1～LS7 by the first optical element LS1 that comprises the fore-end of being located at the substrate P side constitute, and these most optical element LS1～LS7 support with lens barrel PK.In this example, projection optical system PL for example is 1/4,1/5 or 1/8 reduction system with projection multiplying power β.In addition, projection optical system PL times system such as can be and enlarges any one of system.The exposure light EL that is penetrated from lamp optical system 1L is incident in projection optical system PL by object plane side, and behind most optical element LS7～LS1, the image planes side outgoing from projection optical system PL reaches on substrate P.On concrete, exposure light EL is respectively through behind most optical element LS7～LS3, and the institute of the top T4 through the second optical element LS2 decides regional, through following T3 decide the zone after, incident second liquid soaks area L R2.After the institute of the exposure light EL that soaks area L R2 through second liquid through the top T2 of the first optical element LS1 decides the zone, through following T1 decide regionally, after incident first liquid soaks area L R1, arrive on substrate P.
At this example, the first optical element LS1 is the planopaallel plate of the no refracting power of transmissive exposure light EL, and the following T1 of the first optical element LS1 is parallel for generally with top T2.On the one hand, the second optical element LS2 has refracting power (lensing).In addition, the first optical element LS1 also can have refracting power (lensing).
Substrate stage PST1 has the substrate fixture PH that keeps substrate P, in the image planes side of projection optical system PL, the end of at (base) BP last be set as removable.Substrate stage PST is driven by substrate stage driving mechanism PSTD1.Substrate stage driving mechanism PSTD1 is controlled by control device CONT.Substrate stage driving mechanism PSTD1 is for example to comprise formation such as linear motor or voice coil loudspeaker voice coil (voice coil) motor, makes substrate stage PST1 in X axle, Y axle, and Z-direction, and all directions of θ X, θ Y, θ Z direction are removable.Therefore, substrate stage PST1 can make the substrate P that remains in substrate fixture PH move in all directions of X axle, Y axle and Z-direction, θ X, θ Y, θ Z direction.
In the side of substrate stage PST1 moving lens 54 is set.In the position of moving lens 54 laser interferometer 55 is set in subtend again.The position of the two-dimensional directional of the substrate P on the substrate stage PST1, and rotation angle be by laser interferometer 55 with real-time instrumentation, the instrumentation result exports control device CONT to.Control device CONT is based on the instrumentation result of laser interferometer 55; In the two-dimensional coordinate system of laser interferometer 55 defineds, via substrate stage driving mechanism PSTD1 by substrate stage PST1 is driven to prop up the determining positions in X-direction and Y direction of the substrate P that is held in substrate stage PST1.
Again, exposure device EX for example comprises the focus detection system of oblique incidence mode of the face positional information on the detection substrate P surface that is disclosed at japanese patent laid-open 8-37149 communique.The focus detection system detects the position in Z-direction (focal position) for the substrate P surface of the image planes of projection optical system PL.Again, by asking for each focal position, the focus detection system also can ask for the posture of the vergence direction of substrate P at most each points on the surface of substrate P.Control device CONT is based on the testing result of focus detection system; Via base plate driving mechanism PSTD1 substrate stage PST1 is driven; Control basal plate P in the Z-direction position (focal position) and in the position of θ X, θ Y direction, with automatic focus (autofocus) mode and automatically adjustment (auto-leveling) mode surface (plane of exposure) of making substrate P in alignment with via projection optical system PL and the formed image planes of liquid LQ.
In addition, the focus detection system does not also detect the surface location of substrate P via liquid LQ1 in the outside that liquid soaks area L R1, also can with detect the surface location of substrate P via liquid LQ1 and use.
Instrumentation platform PST2 loads the various measuring instruments of carrying out about the instrumentation of exposure-processed, and the image planes side at projection optical system PL is configured to removable on end BP.Instrumentation platform PST2 is driven by instrumentation stage driving PSTD2.Instrumentation stage driving PSTD2 is controlled by control device CONT.Yet control device CONT makes substrate stage PST1 and instrumentation platform PST2 independent mutually removable on end BP respectively respectively via stage driving PSTD1, PSTD2.Instrumentation stage driving PSTD2 has the equal formation with substrate stage driving mechanism PSTD1; Instrumentation platform PST2 is by instrumentation stage driving PSTD2; PST1 is same with substrate stage, and is removable in X axle, Y axle, and Z-direction, θ X, θ Y, and all directions of θ Z direction.The moving lens 56 of laser interferometer 57 usefulness is set in the side of instrumentation platform PST2 again.The position of the two-dimensional directional of instrumentation platform PST2, and rotation angle by laser interferometer 57 with real-time instrumentation, control device CONT is based on the instrumentation result of laser interferometer 57, the position of control instrumentation platform PST2.
On the instrumentation platform PST2 of the image planes side that is disposed at projection optical system PL, form peristome 64K, at its peristome 64K configuration transparent component 64.Transparent component 64 for example is made up of glass plate.Top 65 of transparent component 64 is a tabular surface.Again, top 58 beyond the last split shed 64K of portion of instrumentation platform PST2 also is tabular surface.Yet, instrumentation platform PST2 top 58 with the transparent component 64 that is disposed at peristome 64K top 65 be to be set as rough equal height (face one), top 58 of instrumentation platform PST2 becomes top 65 the formation that comprises transparent component 64.Even top 65 of top 58 and the transparent component 64 of instrumentation platform PST2 is to have water proofing property for liquid LQ to be advisable.
Again; Comprise transparent component 64 top 65 instrumentation platform PST2 top 58; Be set as the top 51 of the substrate stage PST1 that is listed in the surface that comprises substrate P, substrate stage PST1 top 51 with top 58 of instrumentation platform PST2 be to be configured to rough equal height position.
Instrumentation platform PST2 forms the inner space 66 that is connected in peristome 64K.Yet, 66 configuration finders 60 in the inner space of instrumentation platform PST2.Optical system 61 that finder 60 comprises the downside that is disposed at transparent component 64 and pinch shadow element 63 that is constituted by CCD etc.Pinch shadow element 63 can be obtained the optical image (image) of optical element (LS1, LS2) etc. via transparent component 64 and optical system 61.Pinch shadow element 63 is to be electric signal with the image transformation that obtains, and exports its signal (image information) to control device CONT.Again, finder 60 comprises that adjustable lay the grain learns the adjusting mechanism 62 of the focal position of system 61.Again, finder 60 has possibility and observes that first liquid soaks area L R1 and second liquid soaks all visuals field of area L R2.
In addition,, for example constitute a part of optical element or pinch shadow element 63 etc. in most optical elements of optical system 61 though finder 60 is whole configurable in the inside of instrumentation platform PST2, also configurable in the outside of instrumentation platform PST2.Also can omit the formation of adjusting mechanism 62 again.
In addition, can consider the liquid that uses refractive index high when promoting numerical aperture at immersion method, for example refractive index is the liquid more than 1.6.This kind occasion for the purpose of the size (directly) that suppresses projection optical system PL, forms suitable with the material of high index of refraction a part of lens (being bordering on the lens of image planes especially) of projection optical system.For example, be contacted with the second optical element LS2 of the second liquid LQ2 in the optical element with projection optical system PL, form suitable with at least one side's among CaO (calcium oxide) and the MgO (magnesium oxide) material.Whereby, under attainable size, can realize high-NA.For example, also can realize 1.5 degree in the occasion of using ArF PRK (wavelength 193nm), or above high-NA.
In the second above-mentioned example; Be disposed at image planes side (substrate P side) though the first optical element LS1 be the planopaallel plate form of no refracting power; This first optical element LS1 has the occasion of refracting power, makes the first optical element LS1 that is disposed at image planes side form suitable with at least one side's among CaO and the MgO material.
Promptly; The liquid that soaks the zone via the liquid that is formed at the image planes side with object as the projection optical system of projection on substrate, to comprise that being disposed at image planes side is advisable with at least one side's among CaO (calcium oxide) and the MgO (magnesium oxide) formed first optical element of material.Again; Via the liquid that is formed at the image planes side soak the zone liquid with object as the projection optical system of projection on substrate; Comprise first optical element that is disposed at image planes side; With second optical element that object side disposed that is adjacent to first optical element, at least one side of first optical element and second optical element forms suitable by at least one square bar material among CaO (calcium oxide) and the MgO (magnesium oxide).For example, the side of the first optical element LS1 and the second optical element LS2 is formed with CaO (calcium oxide), other party is formed with MgO (magnesium oxide).
In addition, have the occasion of refracting power at the first optical element LS1, the optical path space between the first optical element LS1 and the second optical element LS2 can not be full of with the second liquid LQ2 yet.
Again, though have intrinsic birefringence, intrinsic birefringent symbol is that CaO (calcium oxide) is reverse each other with MgO (magnesium oxide) at the wavelength (for example 193nm) of exposure light EL for CaO (calcium oxide) and MgO (magnesium oxide).Therefore; Make in the optical element of the image planes side (substrate P side) that approaches projection optical system one with CaO or the formed occasion of MgO; Near this optical element optical element is formed with MgO or CaO, be set at suitable with the mode that reduces intrinsic birefringent influence the axial thickness of these optical elements.At this, the crystallization direction of these optical elements is advisable to gather together enough.Again, with the formed optical element of CaO with the formed optical element of MgO adjacency not.
The second optical element LS2 is formed with MgO (or CaO) and make the 3rd optical element LS3 with the formed occasion of CaO (or MgO); With the thickness of the optical axis direction of the thickness of the optical axis direction of these second optical elements LS2 and the 3rd optical element LS3, the mode of the inverse of the intrinsic birefringence value that has in CaO and MgO with rough ratio sets is advisable.In the above-mentioned occasion, the first optical element LS1 of image planes side (substrate P side) is formed with quartz glass.
Again; The occasion that has refracting power at the first optical element LS1; The first optical element LS1 is formed with MgO (or CaO); And the second optical element LS2 is formed with CaO (or CaO), and with the thickness of the optical axis direction of the thickness of the optical axis direction of the first optical element LS1 and the second optical element LS2, also the mode of the inverse of the intrinsic birefringence value that has in CaO and MgO of ratio is set generally.
And the occasion so that CaO (calcium oxide) forms optical element forms the antireflective coating (coat) that comprises MgO (magnesium oxide) and is advisable on the optical surface of this optical element.Again, the occasion that forms optical element with MgO (magnesium oxide) is, the antireflective coating that on the optical surface of this optical element, comprises CaO (calcium oxide) with formation is advisable.
In above-mentioned first example and second example, also can use at CaO (calcium oxide) and add the crystalline material of other material or add the crystalline material of other material at MgO (magnesium oxide) again.Again, also can use barium fluoride (barium fluoride), strontium oxide strontia (strontium oxide), baryta (barium oxide), or with these crystalline materials as major component.In the above-mentioned first real form and the second real form, for the oxide crystallization material, though use CaO (calcium oxide) or MgO (magnesium oxide) also can use crystal (SiO
2Crystallization) or sapphire (sapphire) (aluminium dioxide crystallization).
In addition, use the occasion like above-mentioned immersion method, the numerical aperture NA of projection optical system also possibly be 0.9～1.3.So the numerical aperture NA in projection optical system becomes big occasion, owing to use existing (random) at random polarisation light also to have because of the polarisation effect makes the situation of knot as mis-behave for the exposure light time, is advisable to use polarizing illumination.This kind occasion; The linear polarization illumination of the length direction of the line of implementation alignment mask (reticle mask) and the line pattern of space pattern (line and space pattern); With S polarized component (TE polarized component), promptly the diffraction light of the polarization direction composition of the length direction of pattern along the line suitable to be emitted as more from mask (reticle mask) pattern.Projection optical system PL and coat the occasion that is full of with liquid between the photoresist on substrate P surface; Compared to projection optical system PL and coat the occasion that is full of with air (gas) between the photoresist on substrate P surface; Uprise owing to contribute to the transmissivity of diffraction light on the photoresist surface of the S polarized component (TE polarized component) that contrast (contrast) promotes, also can get high knot as performance above 1.0 occasion in the numerical aperture of projection optical system.Again, suitable combination phase shifting mask or the exposure of japanese patent laid-open 6-188169 communique have more effect in alignment with the oblique incidence illumination (especially with bipolar illumination) of the length direction of line pattern etc.Especially, the combination of linear polarization illumination and bipolar illumination online with cycle direction space pattern be defined in the occasion of a fixed direction, or along the fixed intensive field of a direction sectional hole patterns be combined into effectively.For example; Phase shifting mask (pattern of half spacing (half-pitch) 45nm degree) with half contrast (half-tone) type of transmissivity 6%; And with the occasion of linear polarization illumination and bipolar illumination illumination; The illumination σ that forms the circumscribed circle defined of two bipolar light beams at the pupil face of illuminator is 0.95, is 0.125 σ at the radius of each light beam of its pupil face, during the numerical aperture NA=1.2 of projection optical system PL; Than using the polarisation light time at random, can make the depth of focus (DOF) increase the 150nm degree.
Again, the linear polarization illumination is also effective with the combination of little σ illumination (the numerical aperture NAi of expression illuminator is the illumination below 0.4 with the σ value of the ratio of the numerical aperture NAp of projection optical system).
Again; Serve as exposure light for example with the ArF PRK; Use the projection optical system of the reduction magnification of 1/4 degree; Glass-coated microwire and space pattern (the for example line of 25～50nm degree and space) are exposed to the occasion on the substrate P, sometimes by the structure (the for example fine degree of pattern or the thickness of chromium) of mask M, by guided wave (wave guide) effect mask M with the Polarizer effect; Compared to the diffraction light of the P polarized component (TM polarized component) that contrast is reduced, the diffraction light of more S polarized component (TE polarized component) penetrates from mask M.This kind occasion is though so that be advisable with the illumination of above-mentioned linear polarization, even with polarisation optical illumination mask M at random, as in 0.9～1.3 big occasion, also can get the high-resolution performance at the numerical aperture NA of projection optical system PL.
Again; Make atomic fine rule and space pattern on the mask M be exposed to the occasion on the substrate P; By wiregrating (Wire Grid) effect, P polarized component (TM polarized component) is also arranged than the big possibility of S polarized component (TE polarized component), for example the ArF PRK is exposure light; Use the projection optical system of the reduction magnification of 1/4 degree; Line and the space pattern bigger than 25nm are exposed to the occasion on the substrate P, owing to penetrate from mask M than what the diffraction light of P polarized component (TM polarized component) was Duoed with the diffraction light of S polarized component (TE polarized component), though also can get the high-resolution performance in big occasion as 9～1.3 at the numerical aperture NA of projection optical system PL.
And; Not only in alignment with the linear polarization illumination of the length direction of the line pattern of mask (reticle mask); Such as japanese patent laid-open 6-53120 communique exposure, being combined in the optical axis is that the polarizing illumination method and the oblique incidence illumination of tangent line (week) direction linear polarization of the circle at center also produces effect.Especially; Not only the pattern of mask (reticle mask) extend the line pattern of a fixed direction; In the occasion that comprises the line pattern (comprising different line of cycle direction and space pattern) that extends most different directions; Being same as the mode that japanese patent laid-open 6-53120 communique is disclosed, by and be used in the optical axis polarizing illumination method and the endless belt illumination of tangential direction linear polarization of the circle that is the center, also can get high knot as performance in the big occasion of the numerical aperture NA of projection optical system.For example; Phase shifting mask (half spacing (half-pitch) is the pattern of 63nm degree) with half contrast (half-tone) type of transmissivity 6%; And be polarizing illumination method and the occasion that endless belt illumination (endless belt is than 3/4) is thrown light on of tangential direction linear polarization of the circle at center in order to optical axis, making illumination σ is 0.95, during the numerical aperture NA=1.00 of projection optical system PL; Than using polarisation light at random; Can make the depth of focus (DOF) increase the 250nm degree, the numerical aperture NA=1.2 with the graphic pattern projection optical system of half spacing 55nm degree can make the depth of focus increase the 100nm degree.
Except above-mentioned various illuminations; Suitable for example japanese patent laid-open 4-277612 communique or spy open the progression focus-exposure method that the 2001-345245 communique is disclosed, or use the exposure light of multi-wavelength (for example two wavelength) also to produce effect with the multi-wavelength exposure method of progression focus-exposure method effect same.
In this example, at the front end dress optical element of projection optical system PL, lens can be adjusted the optical characteristics of projection optical system PL thus, for example the adjustment of aberration (spherical aberration, comet (coma) aberration etc.).And,, can be the optical sheet of adjustment usefulness of the optical characteristics of projection optical system PL to the optical element of the front end that is installed on projection optical system PL.Or the planopaallel plate of transmissive exposure light EL.
And the front end optical element of the projection optical system PL produced by flowing of liquid LQ and the big occasion of pressure between substrate P not only make this optical element commutative, can't help also can firmly to fix for the purpose of its pressure moved by making optical element.
In addition, at this example, though be the formation of full of liquid LQ between projection optical system PL and the substrate P surface, for example also can be in the formation of the surface of substrate P installing by the state full of liquid LQ of the cover glass (cover glass) that planopaallel plate constituted.
In addition; Substrate P for above-mentioned second example; It not only is the semiconductor crystal wafer of semiconductor element manufacturing usefulness; The glass substrate that also applicable display device is used, the pottery that thin-film head is used (ceramics) wafer, the perhaps used mask of exposure device or reticle mask raw sheet (synthetic quartz, Silicon Wafer) etc.
Exposure device EX is except making mask M and substrate P with the scanning exposure apparatus (scanning stepper) of moved further with step-scan (the step and scan) mode of the pattern scan exposure of mask M; Also applicable to mask M and substrate P are made public with blanket with the pattern of stationary state with mask M, the stepping that substrate stepping is in regular turn moved repeats the projection aligner (stepper) of (step and repeat) mode.
Again, exposure device EX is also applicable to making first pattern and substrate P with generally static state the reduced image of first pattern used projection optical system (the refractive projection optical system that does not for example contain reflecting element with 1/8 reduction magnification) exposure device with blanket Exposure mode on substrate P.This kind occasion; More thereafter; Also, overlap with part with first pattern and on substrate P, sum up the blanket exposure device of stitching (stitch) mode of exposure applicable to making second pattern and substrate P with static generally state its projection optical system of reduced image use with second pattern.Again, for the exposure device of suture way, also applicable at least two patterns on substrate P with the part transfer printing that overlaps, the exposure device of (step and stitch) mode is sewed up in the stepping that substrate P is moved in regular turn.
Again, the present invention is also applicable at japanese patent laid-open 10-163099 communique, and the spy opens flat 10-214783 communique, the exposure device of two platforms (twin-stage) type that special table 2000-505958 communique etc. is disclosed.In the occasion of two flatbed exposure devices, can keep the two substrates platform of substrate that at least a portion of finder 60 is set at each, at least a portion of finder 60 also can only be set at a side substrate stage.
Again, in above-mentioned example,, do not comprising the instrumentation platform, only comprising also applicable the present invention of exposure device of a substrate stage though the exposure device that comprises instrumentation platform and machine plate platform is suitable for occasion explanation of the present invention.
Again; At above-mentioned example is the exposure device that is employed between projection optical system PL and the substrate P with local full of liquid, the liquid immersion exposure apparatus that the platform of the substrate that will keep exposure object that the present invention is also disclosed applicable to japanese patent laid-open 6-124873 communique moves in liquid bath.
Kind for exposure device EX is not limited at the exposure device of substrate P with the semiconductor element manufacturing usefulness of semiconductor element pattern exposure; Also can extensively add and be applicable to that the liquid crystal display cells manufacturing is used or the exposure device of display manufacturing usefulness; Make thin-film head, the exposure device of pinch shadow element (CCD) or reticle mask or mask etc.
As more than, the exposure device EX of second example is with each subsystem that comprises each inscape that the application's claim lifted, with keep the mode assembly of fixed mechanical precision, electric precision, optical accuracy.For the purpose of guaranteeing these various precision, before and after assembling, carry out carrying out carrying out to reaching the adjustment of electric precision for various electric systems for each mechanical system for reaching the adjustment of mechanical precision for reaching the adjustment of optical accuracy for various optical systems.From the technology of various groups of subsystems device, exposure devices is to comprise the mutual machinery of various subsystems in succession, the distribution of circuit in succession, the pipe arrangement of pneumatic circuit waits in succession.Before the technology of various groups of subsystems device, exposure devices, each subsystem other packaging technology is arranged certainly.After the technology that is assembled into exposure device of various subsystems finishes, comprehensively adjust, guarantee the various precision that exposure device is all.In addition, the technology of exposure device is to be advisable at the clean room of management temperature and cleanliness.
Exposing equipment system in the above-mentioned example is by lighting device lighting reticle mask (mask) (illumination technology); Use transfer printing that projection optical system will be formed at mask with pattern exposure in photonasty substrate (exposure technology), can make micro element (semiconductor element, scoop up shadow element, liquid crystal display cells, thin-film head etc.).Below, the exposure device that uses present embodiment is decided circuit pattern at the wafer of photonasty substrate etc. by forming, with an example of the method for the semiconductor element of acquisition micro element with flowchart text with reference to Fig. 9.
At first, in the step 301 of Fig. 9, deposited metal film on a collection of wafer.Step 302 is coated with photoresist on the metal film on its a collection of wafer secondarily.Thereafter, in step 303, use the exposure device of this example, the pattern image on the mask is via its projection optical system, and make public transfer printing in regular turn in the territory, each pinch shadow zone on its a collection of wafer.Thereafter, in step 304, carry out the video picture of the photoresist on its a collection of wafer after; In step 305; On its a collection of wafer with the photoresist pattern serve as cover curtain by carrying out etching, corresponding to the circuit pattern of the pattern on the mask, be formed at the territory, each pinch shadow zone on each wafer.
By the formation of carrying out the more circuit pattern on upper strata etc., make devices such as semiconductor element thereafter.According in the above-mentioned semiconductor device manufacturing method, can the semiconductor element with atomic thin circuit pattern be obtained with good yield (throughput).In addition; Though carry out evaporation metal on wafer in step 301～step 305; On its metal film, be coated with photoresist, however each technology of exposure, video picture, etching etc., certainly also can be before these technologies; After forming silicon oxide layer on the wafer, carry out on its silicon oxide layer, being coated with photoresist each technology of exposure then, video picture, etching etc.
Again, the exposure device of this example be by go up to form at plate (glass substrate) decide pattern (circuit pattern, electrode pattern), to obtain liquid crystal display cells as micro element.Below, with reference to the process flow diagram of Figure 10, to an example explanation of method for making at this moment.In Figure 10, pattern form exposure device that technology 401 is to use this example with the pattern transfer of mask in photonasty substrate (glass substrate of coating photoresist etc.), carry out so-called photoetching process.Photoetching process thus, on sensitive substrate, form comprise most electrodes etc. decide pattern.Thereafter, the substrate of exposure is by through video picture technology, etch process, photoresist stripping process etc., on substrate, forms institute and decides pattern, divides a word with a hyphen at the end of a line in the color filter film formation technology 402 of next.
Secondly; Forming technology 402 at color filter film is to form corresponding to three points (dot) group of red R (Red), green G (Green), blue B (Blue) to arrange so that the array shape is most, or the filter coating group of three stripe (stripe) of R, G, B is arranged in the color filter film of most horizontal scanning line directions.Then, after color filter film forms technology 402, carry out unit (cell) packaging technology 403.Packaging technology 403 is to use the substrate that forms pattern that having of technology 401 gained decided at pattern in the unit, and forms the assembling liquid crystal panels (liquid crystal cells) such as color filter film of technology 402 gained at color filter film.
Packaging technology 403 is for example to form the substrate of pattern that having of technology 401 gained decided and the intermembranous injection liquid crystal of colorized optical filtering that forms technology 402 gained at color filter film at pattern in the unit, makes liquid crystal panel (liquid crystal cells).Thereafter, at module packaging technology 404, installing makes the liquid crystal panel (liquid crystal cells) of assembling carry out the circuit of display action, and each part of grade backlight is to accomplish liquid crystal display cells.Manufacturing approach according to above-mentioned liquid crystal display cells can good yield obtain the liquid crystal display cells with atomic thin circuit pattern.
In addition, though use the ArF quasi-molecule laser source in the above-described embodiments, be not to be defined in this, for example also can use like F
2The suitable light source of other of LASER Light Source.And,, be not to be defined in this, for the yet applicable the present invention of other general projection optical system though in above-mentioned example, be suitable for the present invention for the projection optical system that is equipped on exposure device.
Claims (33)
1. a knot image optical system makes first conjugation with second optics, it is characterized in that:
The refractive index of the gas in the light path of said knot image optical system is 1 o'clock, and the optical routing refractive index ratio 1.5 big liquid between said knot image optical system and said second are full of:
Said knot image optical system comprises the boundary lens that said first side contacts with said gas and said second side contacts with said liquid;
Said boundary lens are by having positive refractive power, and refractive index ratio 1.8 big optical materials form.
2. knot image optical system as claimed in claim 1 is characterized in that:
The focal length of said boundary lens is Fb, when said second maximum image height or maximum object height are Yi, meets the following conditions:
0.11＜Yi/Fb＜0.15。
3. knot image optical system as claimed in claim 1 is characterized in that:
The focal length of said boundary lens is Fb, when said second maximum image height or maximum object height are Yi, meets the following conditions:
0.115＜Yi/Fb＜0.15。
4. knot image optical system as claimed in claim 1 is characterized in that:
The focal length of said boundary lens is Fb, when said second maximum image height or maximum object height are Yi, meets the following conditions:
0.115＜Yi/Fb＜0.14。
5. like each described knot image optical system of claim 1～4, it is characterized in that:
Said boundary lens are to be formed by magnesium oxide.
6. knot image optical system as claimed in claim 5 is characterized in that:
Said knot image optical system comprises by formed at least one the transmittance member of calcium oxide.
7. knot image optical system as claimed in claim 6 is characterized in that:
Comprise the first transmittance member to the, three transmittance members; The wherein said first transmittance member to the, three transmittance members are provided with along the path of carrying out of light from said first face in regular turn; And the said first transmittance member to the, three transmittance members comprise by formed at least one the transmittance member of said calcium oxide, and the said first transmittance member to the, three transmittance members are arranged between said first and the said boundary lens.
8. like each described knot image optical system of claim 1～4, it is characterized in that:
Said boundary lens are to be formed by calcium oxide.
9. knot image optical system as claimed in claim 8 is characterized in that:
Said knot image optical system comprises by formed at least one the transmittance member of magnesium oxide.
10. like each described knot image optical system of claim 1～4, it is characterized in that:
Comprise the first transmittance member to the, three transmittance members; The said first transmittance member to the, three transmittance members are provided with along the path of carrying out of light from said second face in regular turn; And the said first transmittance member to the, three transmittance members comprise by formed at least one the transmittance member of magnesium oxide with by formed at least one the transmittance member of calcium oxide, and the said first transmittance member to the, three transmittance members are arranged between said first and the said boundary lens; And
By the center thickness of formed at least one the transmittance member of said magnesium oxide and be TM, by the center thickness of formed at least one the transmittance member of calcium oxide and when being TC, the condition below satisfying:
0.05＜TC/TM＜0.43。
11. knot image optical system as claimed in claim 10 is characterized in that:
By the formed transmittance member of said magnesium oxide with constitute one by the formed transmittance member of said calcium oxide and engage lens.
12. each the described knot image optical system like claim 1～4 is characterized in that:
Said boundary lens are by with MgxCa
1-xA represented crystalline material forms, wherein 0.8＜x＜0.9.
13. each the described knot image optical system like claim 1～4 is characterized in that, also comprises:
Generally the optical component of no refracting power is disposed in the light path between said boundary lens and said second.
14. knot image optical system as claimed in claim 13 is characterized in that:
The refractive index that the liquid that connects near the optical component of said rough no refracting power has is high.
15. knot image optical system as claimed in claim 14 is characterized in that:
The optical component of said rough no refracting power is by calcium oxide, magnesium oxide, fluorite or quartzy formation.
16. each the described knot image optical system like claim 1～4 is characterized in that:
Comprise that also said boundary lens are formed with the crystallization that belongs to said cubic system with the formed crystal optics element of the crystallization that belongs to cubic system;
Said crystal optics element is to set in the mode of the optical axis of said knot image optical system with the rough unanimity of first crystallographic axis;
Said boundary lens are to set in the mode of the optical axis of said knot image optical system with the rough unanimity of second crystallographic axis; And
With the orientation of the crystallographic axis of the different said crystal optics element of said first crystallographic axis and with the orientation of the crystallographic axis of the different said boundary lens of said second crystallographic axis, be to set with the mode that reduction belongs to all intrinsic birefringent influences of the crystallization of said cubic system.
17. knot image optical system as claimed in claim 16 is characterized in that:
Said boundary lens are formed with magnesium oxide or calcium oxide; And
Said crystal optics element is formed with calcium oxide or magnesium oxide.
18. knot image optical system as claimed in claim 16 is characterized in that:
The thickness of the optical axis direction of the thickness of the optical axis direction of said boundary lens and said crystal optics element is all intrinsic birefringent influence mode settings of crystallization that belong to said cubic system with reduction.
19. each the described knot image optical system like claim 1～4 is characterized in that:
Said knot image optical system comprises at least one concave mirror.
20. knot image optical system as claimed in claim 19 is characterized in that comprising:
The refractive first knot image optical system is based on forming first intermediary image from said first light;
The second knot image optical system comprises said at least one concave mirror, forms second intermediary image based on the light from said first intermediary image;
Refractive the 3rd knot image optical system is formed on said second said reduced image based on the light from said second intermediary image;
The first deflection mirror is disposed in the light path between said first knot image optical system and the said second knot image optical system; And
The second deflection mirror is disposed in the light path between said second knot image optical system and said the 3rd knot image optical system.
21. knot image optical system as claimed in claim 20 is characterized in that:
The all knots of said knot image optical system are MA as multiplying power, and the knot of said the 3rd knot image optical system is when being M3 as multiplying power, satisfy 0.5＜| the condition of M3/MA|＜1.
22. knot image optical system as claimed in claim 1 is characterized in that:
Said boundary lens are that the oxide crystallization material by cubic system forms.
23. knot image optical system as claimed in claim 22 is characterized in that:
Said oxide crystallization material is from CaO and comprises the crystalline material of CaO, MgO and to comprise the crystalline material crowd that crystalline material constituted of MgO selected.
24. knot image optical system as claimed in claim 22 is characterized in that:
Said boundary lens are to dispose with the rough parallel mode of crystal orientation < 100>and optical axis.
25. knot image optical system as claimed in claim 22 is characterized in that:
Said boundary lens are to dispose with the rough parallel mode of crystal orientation < 111>and optical axis.
26. knot image optical system as claimed in claim 22 is characterized in that:
The numerical aperture NA of said second side surpasses 1.3.
27. knot image optical system as claimed in claim 22 is characterized in that, said knot image optical system comprises:
The refractive first knot image optical system is disposed between said first and said second;
The second knot image optical system comprises a concave mirror at least, is disposed between said first knot image optical system and said second; And
Refractive the 3rd knot image optical system is disposed between the said second knot image optical system and said second; And
In the light path between said first knot image optical system and the said second knot image optical system, and in the light path between said second knot image optical system and said the 3rd knot image optical system, distinctly form intermediary image.
28. knot image optical system as claimed in claim 27 is characterized in that:
The all knots of said knot image optical system are MA as multiplying power, and the knot of said the 3rd knot image optical system is when being M3 as multiplying power, satisfy 0.5＜| the condition of M3/MA|＜1.
29. knot image optical system as claimed in claim 28 is characterized in that comprising:
The first deflection mirror is disposed in the light path between said first knot image optical system and the said second knot image optical system; And
The second deflection mirror is disposed in the light path between said second knot image optical system and said the 3rd knot image optical system.
30. knot image optical system as claimed in claim 29 is characterized in that:
Said each other intermediary image is in the light path that is formed in the light path of said concave mirror side of the said first deflection mirror with the said concave mirror side of the said second deflection mirror.
31., it is characterized in that like claim 1～4, each described knot image optical system of 22～30:
Said liquid is using wavelength to have the refractive index more than 1.6.
32. an exposure device comprises claim 1～4, each described knot image optical system of 22～30, it is characterized in that, the said liquid that soaks the zone via the formed liquid of image planes side of said knot image optical system makes base plate exposure.
33. an exposure method is characterized in that, uses claim 1～4, each described knot image optical system of 22～30, the said liquid that soaks the zone via the formed liquid of image planes side of knot image optical system makes base plate exposure.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP227226/2004 | 2004-08-03 | ||
| JP2004227226 | 2004-08-03 | ||
| JP2004267319 | 2004-09-14 | ||
| JP267319/2004 | 2004-09-14 | ||
| JP136902/2005 | 2005-05-10 | ||
| JP2005136902A JP2006113533A (en) | 2004-08-03 | 2005-05-10 | Projection optical system, exposure apparatus, and exposure method |
| PCT/JP2005/013447 WO2006013734A1 (en) | 2004-08-03 | 2005-07-22 | Projection optical system, exposure apparatus, and exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101002127A CN101002127A (en) | 2007-07-18 |
| CN101002127B true CN101002127B (en) | 2012-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800263699A Expired - Fee Related CN101002127B (en) | 2004-08-03 | 2005-07-22 | Projection optical system, exposing method and device |
| CN2005800236013A Expired - Fee Related CN101002299B (en) | 2004-08-03 | 2005-08-01 | Exposing device and component manufacturing method |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800236013A Expired - Fee Related CN101002299B (en) | 2004-08-03 | 2005-08-01 | Exposing device and component manufacturing method |
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| CN (2) | CN101002127B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107255907B (en) * | 2017-08-17 | 2021-01-22 | 京东方科技集团股份有限公司 | Compensation device, exposure device and exposure compensation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133588A (en) * | 1998-08-18 | 2000-05-12 | Nikon Corp | Aligner, manufacture thereof and exposing method |
| JP2003318098A (en) * | 2002-04-26 | 2003-11-07 | Nikon Corp | Projection optical system, aligner provided with the same, and method of exposure using the same |
| JP2004205698A (en) * | 2002-12-24 | 2004-07-22 | Nikon Corp | Projection optical system, exposure device and exposing method |
| CN1668984A (en) * | 2002-08-23 | 2005-09-14 | 株式会社尼康 | Projection optical system and method for photolithography and exposure apparatus and method using same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2753930B2 (en) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | Immersion type projection exposure equipment |
-
2005
- 2005-07-22 CN CN2005800263699A patent/CN101002127B/en not_active Expired - Fee Related
- 2005-08-01 CN CN2005800236013A patent/CN101002299B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133588A (en) * | 1998-08-18 | 2000-05-12 | Nikon Corp | Aligner, manufacture thereof and exposing method |
| JP2003318098A (en) * | 2002-04-26 | 2003-11-07 | Nikon Corp | Projection optical system, aligner provided with the same, and method of exposure using the same |
| CN1668984A (en) * | 2002-08-23 | 2005-09-14 | 株式会社尼康 | Projection optical system and method for photolithography and exposure apparatus and method using same |
| JP2004205698A (en) * | 2002-12-24 | 2004-07-22 | Nikon Corp | Projection optical system, exposure device and exposing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101002299A (en) | 2007-07-18 |
| CN101002299B (en) | 2010-05-05 |
| CN101002127A (en) | 2007-07-18 |
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