CN100592182C - Transflective type liquid crystal display device - Google Patents
Transflective type liquid crystal display device Download PDFInfo
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- CN100592182C CN100592182C CN200710126905A CN200710126905A CN100592182C CN 100592182 C CN100592182 C CN 100592182C CN 200710126905 A CN200710126905 A CN 200710126905A CN 200710126905 A CN200710126905 A CN 200710126905A CN 100592182 C CN100592182 C CN 100592182C
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/13363—Birefringent elements, e.g. for optical compensation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Abstract
The present invention relates to a transflective liquid crystal display device including a first substrate, a second substrate, a liquid crystal layer, and a pixel electrode. The first substrate has athin film transistor and the second substrate has a color filter and faces the first substrate. The liquid crystal layer is disposed between the first and the second substrates. The pixel electrode is disposed above the first substrate and electrically connected to the thin film transistor. The transflective liquid crystal display device further includes a pixel region. The pixel region is divided into a transmit part and a reflective part, and the reflective part includes a first region and a second region. The pixel electrode extends to the transmit part and only the second region of the reflective part.
Description
Technical field
The present invention relates to liquid crystal display (LCD) device, more particularly, relate to a kind of transmission-reflecting LCD device with single cell gap.
Background technology
The LCD device is operated by the optical anisotropy and the polarization characteristic that utilize liquid crystal material.Liquid crystal molecule has long and thin shape, and tends to along same direction orientation according to electric field.The alignment direction of suitable electric field controls liquid crystal molecule.The optical anisotropy of liquid crystal material is changed, and makes the light of propagating by liquid crystal material produce polarization.Thereby display image.
The LCD device comprises: the thin-film transistor array base-plate with thin film transistor (TFT) and pixel electrode; Color filter array substrate with color-filter layer; And be formed on liquid crystal layer between these two substrates.Recently, active matrix (AM) type LCD device becomes universal because of high resolving power and good image quality.AM type LCD device comprises thin film transistor (TFT) and the pixel electrode by matrix structure.
The LCD device is not launched light.The LCD device uses additional source of light, for example, and back light unit.The light quantity of watching by the LCD device is about 7% of the light summation that generates from back light unit.High brightness LCD device may need a large amount of light, and this can increase the power consumption of back light unit.Need large-sized battery to power to back light unit.The running time of back light unit may be subjected to the restriction of battery mode.
In bright environment, may be difficult to discern the image that is presented on the LCD device.Therefore, developing transmission-reflection (being referred to herein as " saturating anti-(transflective) ") type LCD device.Trans-reflecting type LCD device can also be called instead (transreflective) type LCD device.Trans-reflecting type LCD device can environment for use light and the light that generates from back light unit.Trans-reflecting type LCD device comprises a plurality of unit pixel areas, and the constituent parts pixel region all has transmissive portions and reflecting part.
Fig. 1 illustration the vertical orientation of prior art (VA) pattern trans-reflecting type LCD device.Fig. 1 is the sectional view of illustration prior art VA pattern trans-reflecting type LCD device 5.As shown in Figure 1, LCD device 5 comprises the unit cell that is divided into reflecting part and transmissive portions.The cell gap of reflecting part is different with the cell gap of transmissive portions, and it is called two cell-gap configuration.This pair cell-gap configuration is designed to provide different birefringences to reflecting part and transmissive portions.
In Fig. 1, first substrate 10 and second substrate 30 and are formed with liquid crystal layer 50 toward each other between first substrate 10 and second substrate 30.Back light unit is launched light below first substrate 10.In addition, on the surface of facing mutually of first substrate 10 and second substrate 30, be formed with both alignment layers.The liquid crystal molecule of liquid crystal layer 50 is pressed the predetermined direction orientation.
First substrate 10 comprises: intersected with each other to limit the select lines and the data line of pixel region; The thin film transistor (TFT) that the point of crossing of contiguous select lines and data line forms; Be formed on the passivation layer on the thin film transistor (TFT); Be formed on the reflector plate 11 that is used for reflect ambient light (natural light or artificial light) on the passivation layer of reflecting part; Be formed on the whole lip-deep insulation course 12 of the passivation layer that comprises reflector plate 11; And the pixel electrode of making by transparent material 13 that is formed on the insulation course 12 and is connected with the drain electrode of thin film transistor (TFT).Pixel electrode 13 is provided with the slit pattern 13a that is used for unit picture element is distinguished into a plurality of territories.
Second substrate 30 comprises: black matrix (black matrix) layer that is used to prevent light leak on other parts except that pixel region; Be used for R/G/B color-filter layer 32 at respective pixel district apparent color; Be formed on the public electrode 34 on the R/G/B color-filter layer 32; And be formed on outer covering layer 36 on the public electrode 34 of reflecting part.
In reflecting part, surround lighting, then reflects on reflector plate 11 by liquid crystal layer 50 from second substrate 30, and once more by liquid crystal layer 50.Therefore, light passes through liquid crystal layer 50 twice.For transmissive portions, light once passes through liquid crystal layer.In this case, the cell gap of reflecting part (g1) is different with the cell gap (g2) of transmissive portions.Outer covering layer 36 produces two different cell gaps (g1) and (g2).Different cell gap (g1) and (g2) also cause by the phase place of the light of reflecting part and transmissive portions different.
Can make the optical characteristics of transmissive portions and reflecting part become consistent by the thickness that control is formed on the outer covering layer 36 on the public electrode 34 of reflecting part.Yet, can carry out additional process, deposit outer covering layer 36 also carries out composition to it, so that it only is retained on the reflecting part.Outer covering layer 36 also causes producing difference gap between transmissive portions and reflecting part.This difference gap influence is deposited on the whole lip-deep both alignment layers and the friction process of the substrate that comprises outer covering layer 36.The defective that rubs may appear.Therefore, need a kind of trans-reflecting type LCD device of eliminating the shortcoming of prior art basically.
Summary of the invention
By introducing, in one embodiment, provide a kind of transflective liquid crystal display device, this transflective liquid crystal display device comprises first substrate, second substrate, liquid crystal layer and pixel electrode.Described first substrate has thin film transistor (TFT), and described second substrate has color filter and faces described first substrate.Described liquid crystal layer is arranged between described first substrate and described second substrate.Described pixel electrode is arranged on described first substrate top, and is electrically connected to described thin film transistor (TFT).Described transflective liquid crystal display device also comprises the pixel region with described thin film transistor (TFT), described liquid crystal layer and described pixel electrode.Described pixel region is divided into transmissive portions and reflecting part, and described reflecting part comprises first district and second district.Described pixel electrode extends to only described second district of described transmissive portions and described reflecting part.
In another embodiment, provide a kind of transflective liquid crystal display device, this transflective liquid crystal display device comprises pixel electrode and has the pixel region of single cell gap.Described pixel region comprises transmissive portions and reflecting part.Described transmissive portions is with phase delay λ/2 of light, and described reflecting part is with phase delay λ/4 of described light, and wherein, λ is that the optical phase of liquid crystal is put off.
In the another embodiment of trans-reflecting type display device, pixel region comprises transmissive portions and the reflecting part with single cell gap.Described reflecting part comprises first district and second district, and with phase delay λ/4 of light, wherein, λ is that the optical phase of liquid crystal is put off.Described transmissive portions is with phase delay λ/2 of described light.Described trans-reflecting type display device also comprises described second district that extends to described reflecting part and the pixel electrode of described transmissive portions.Described trans-reflecting type display device also comprises the public electrode in the face of described pixel electrode.
The part of other advantages of the present invention, purpose and feature will be set forth in part in the following description, and will become clear after the explanation of a part below having been studied by those of ordinary skills, perhaps can know by implementing the present invention.Purpose of the present invention and other advantages can be realized by the structure of specifically noting in instructions and claims and accompanying drawing and obtain.
Should be appreciated that to above general introduction of the present invention and following detailed description all be exemplary and indicative, aim to provide further explanation the present invention for required protection.
Description of drawings
Accompanying drawing is included to provide further understanding of the present invention, and it is merged in and constitutes the application's a part, the accompanying drawing illustration embodiments of the present invention, and be used from instructions one and explain principle of the present invention.In the accompanying drawings:
Fig. 1 is the sectional view of the trans-reflecting type LCD device of illustration prior art;
Fig. 2 is the planimetric map of illustration according to the trans-reflecting type LCD device of first embodiment;
Fig. 3 is the sectional view along the line I-I intercepting of Fig. 2;
Fig. 4 is the synoptic diagram of illustration according to the capacitance of the unit picture element of first embodiment;
Fig. 5 is an illustration according to the curve map of the optical characteristics of the transmissive portions of first embodiment and reflecting part;
Fig. 6 is the planimetric map of illustration according to the trans-reflecting type LCD device of second embodiment;
Fig. 7 is the planimetric map of illustration according to the trans-reflecting type LCD device of the 3rd embodiment; And
Fig. 8 is the sectional view along the line II-II intercepting of Fig. 7.
Embodiment
To describe preferred implementation of the present invention in detail below, in the accompanying drawing illustration embodiment of these preferred implementations.Whenever possible, just in institute's drawings attached, use same numeral to represent same or similar part.Hereinafter, with reference to accompanying drawing trans-reflecting type LCD device is described.
The trans-reflecting type LCD device of following embodiment has single cell gap.There are not to use two cell-gap configuration to provide different birefringences to reflecting part and transmissive portions.As an alternative be that pixel electrode extends to a part and the transmissive portions of reflecting part.The described part that is extended with pixel electrode of reflecting part has the optical characteristics different with the remainder that does not have pixel electrode of reflecting part.The size of described part can be selected in the following manner: promptly, make the overall optical characteristics of the overall optical characteristics of reflecting part and transmissive portions roughly the same, and the birefringence of the liquid crystal of reflecting part is different from the birefringence of the liquid crystal of transmissive portions.This trans-reflecting type LCD device has normal black pattern, and utilizes single cell-gap configuration suitably to operate.
First embodiment
Fig. 2 is the planimetric map of illustration according to the trans-reflecting type LCD device 100 of first embodiment.Fig. 3 is the sectional view along the line I-I intercepting of Fig. 2.As shown in Figures 2 and 3, trans-reflecting type LCD device 100 comprises: first substrate 102 and second substrate 110 that face with each other with predetermined space; And be formed on liquid crystal layer 150 between first substrate 102 and second substrate 110.First substrate 102 is corresponding to thin-film transistor array base-plate, and second substrate 110 is corresponding to color filter array substrate.Each pixel region all is divided into reflecting part and transmissive portions.And reflecting part is divided into first district (reflecting part I) that does not wherein form pixel electrode and second district (reflecting part II) that wherein is formed with pixel electrode.In Fig. 2, second district 136 is positioned at the central authorities of the top left region of pixel region.In other embodiments, second district can be positioned at the zones of different place of pixel region.Although not shown, first substrate, 102 belows are provided with back light unit.In this embodiment, LCD device 100 has vertical orientation (VA) pattern; Yet it is not limited thereto.As long as LCD device 100 has normal black pattern, then various other patterns such as TN pattern, ecb mode, ocb mode etc. all are fine.
As shown in Figure 2, first substrate 102 comprises: press many select liness 111 that first direction is provided with; By the second direction setting vertical with first direction to limit many data lines 121 of a plurality of pixel regions; And many concentric lines 115 that are provided with abreast with select lines 111 in the respective pixel district.
Contiguous select lines 111 is formed with a plurality of thin film transistor (TFT)s with the respective quadrature fork branch of data line 121.In the reflecting part of each pixel region, be formed with reflector plate 114, in second district of the reflecting part of each pixel region and transmissive portions, be formed with pixel electrode 117.
Simultaneously, each thin film transistor (TFT) all comprises: the grid 111a that stretches out from select lines 111; Cover the gate insulation layer 112 of select lines 111 and grid 111a; At the semiconductor layer 113 that is formed on above the grid 111a on the gate insulation layer 112; And the source electrode 121a and the drain electrode 121b that are formed on the both sides of semiconductor layer 113.Source electrode 121a is connected to data line 121.
On the whole surface of first substrate 102 that comprises thin film transistor (TFT), be formed with passivation layer 118.On the passivation layer of reflecting part, also be formed with reflector plate 114.Reflector plate 114 reflection exterior light.And, on the whole surface of first substrate that comprises reflector plate 114, be formed with insulation course 116.
In pixel region, on the insulation course 116 of first substrate 102, be formed with pixel electrode 117.Pixel electrode 117 is electrically connected with the drain electrode of thin film transistor (TFT).Pixel electrode 117 is not formed in the entire emission portion of pixel region.As an alternative be that pixel electrode 117 is formed among transmissive portions and second district (the reflecting part II).Although do not form pixel electrode in first district (reflecting part I), the thickness of pixel electrode is very little, therefore can not influence the cell gap in first district.Only as embodiment, the thickness of pixel electrode is approximately
The scope of the cell gap in first district is between 3 μ m and 4.5 μ m.In other embodiments, cell gap and pixel electrode can adopt multiple other sizes.
In Fig. 2 and Fig. 3, the drain electrode 121b of thin film transistor (TFT) extends to the upside of concentric line 115, and the drain electrode 121b of thin film transistor (TFT) and pixel electrode 117 contact with each other on concentric line 115 by contact hole 117b.Reflecting part from concentric line 115 to pixel region is extended with extension 115a.So, between the drain electrode 121b of extension 115a and thin film transistor (TFT), form holding capacitor (Cst).
In Fig. 3, pixel region has single cell gap for transmissive portions and reflecting part.Because compare the thickness that to ignore pixel electrode, so the pixel electrode that is formed in reflecting part II and the transmissive portions can not influence this single cell-gap configuration with the size of cell gap.Light passes through transmissive portions once, and passes through reflecting part twice.Transmissive portions with single cell gap should have different liquid crystal birefringences with reflecting part and optical phase is put off λ.For example, transmissive portions has λ/2, and reflecting part has λ/4.
The size of the size in first district (reflecting part I) and second district (reflecting part II) can be selected in the following manner: promptly, make trans-reflecting type LCD device 100 can utilize single cell gap to operate rightly.By controlling dimension, when identical voltage was applied to reflecting part and transmissive portions, transmissive portions had different birefringences with reflecting part.Specifically, reflecting part has and the birefringence of transmissive portions (Δ neff: effectively birefringence) birefringence and the phase differential different with phase differential.After unit picture element is distinguished into reflecting part and transmissive portions, can and there be the size in first district of pixel electrode 117 to select to the size in second district with pixel electrode 117.
When identical voltage was applied to pixel region, first district of reflecting part (reflecting part I) had low optical characteristics owing to not forming pixel electrode.On the other hand, second district of reflecting part (reflecting part II) has high optical characteristics owing to being formed with pixel electrode.First district (reflecting part I) of reflecting part and the average optical characteristics design of second district (reflecting part II) can be become identical with the optical characteristics of transmissive portions.This can cause the overall optical characteristics of LCD device 100 even.The gamma characteristic of reflecting part also can be roughly the same with the gamma characteristic of transmissive portions.
The size of reflecting part and transmissive portions can be corresponding to the capacitance of each several part.Along with size becomes big, capacitance can tend to increase.Capacitance also may be subjected to the influence of reflecting part structure.Specifically, as below describing in detail, in first district (reflecting part I), there is not pixel electrode may cause different capacitances.
The change of the optical characteristics of reflecting part is relevant with the position of pixel electrode.Utilize the change that capacitor in transmissive portions and the reflecting part is explained optical characteristics that is formed on as shown in Figure 4.Fig. 4 is the synoptic diagram of illustration according to the capacitance of the unit picture element of first embodiment.Transmissive portions is provided with: be formed on the holding capacitor (Cst) between drain electrode 121b and the concentric line 115; And be formed on liquid crystal capacitor (Clc) between pixel electrode 117 and the public electrode 132.
(reflecting part II) is provided with in second district: be formed on the liquid crystal capacitor (Glc_r2) between pixel electrode 117 and the public electrode 132; And be formed on first capacitor (Cpxl_re) between pixel electrode 117 and the reflector plate 114.First capacitor (Cpxl_re) is capacitor parasitics and can has very little electric capacity.First capacitor (Cpxl_re) does not influence the driving to liquid crystal.First district (reflecting part I) is provided with second capacitor (Clc_r1), the 3rd capacitor (C13) and the 4th capacitor (Cre-sd).Second capacitor (Clc_r1) is formed between reflector plate 114 and the public electrode 132, and liquid crystal layer 150 is used as dielectric layer.The 3rd capacitor (C13) is formed between reflector plate 114 and the public electrode 132, and insulation course 116 is used as dielectric layer.The 4th capacitor (Cre-sd) is formed between reflector plate 114 and the drain electrode 121b.
Because pixel electrode does not extend to first district (reflecting part I), the 3rd capacitor (C13) can influence the driving to liquid crystal layer.If pixel electrode can extend to first district (reflecting part I), then between pixel electrode and reflector plate 114, will form capacitor.This capacitor will be formed and be operated by the mode identical with as shown in Figure 4 first capacitor (Cpxl_re).Different with the 3rd capacitor (C13) is that this capacitor does not influence the driving to liquid crystal.The 3rd capacitor is operated based on induced potential that imposes on reflector plate 114 and common electric voltage Vcom.The 3rd capacitor (C13) can influence the voltage that imposes on first district (reflecting part I).Specifically, the 3rd capacitor (C13) can reduce to impose on the voltage in first district, and this causes the optical characteristics in first district to reduce.First capacitor (Cpxl_re) can be added to the 3rd capacitor (C13), impose on the voltage in first district with influence.Select as another kind, first capacitor (Cpxl_re) can be left in the basket because of electric capacity is little.The reduction of the optical characteristics in first district (reflecting part I) can compensate the high optical characteristics of second district (reflecting part II).Therefore, it is smooth that the optical characteristics in first district and second district is flattened, and reflecting part can show can be roughly the same with the optical characteristics of transmissive portions the average optical characteristic.
To impose on the voltage Vp (B) in first district (reflecting part I) and impose on transmissive portions and the voltage Vp (A) of second district (reflecting part II) is expressed as follows:
Therefore, can impose on the voltage Vp (B) in first district of reflecting part based on the capacitor value measurement.
In such a way to second district take up room and taking up room of first district control: promptly, the operating characteristic that makes transmissive portions is that (wherein Δ nd (eff) is an effective phase difference in Δ nd (eff)=λ/2, λ is that the optical phase of liquid crystal is put off), the operating characteristic of reflecting part is Δ nd=λ/4, and the operating characteristic of reflecting part is as follows:
R
Total={ size in first district of size+Rp (the B) * reflecting part in second district of Rp (A) * reflecting part }/2 ... (formula 3)
R
TotalBe the effective reflectivity of reflecting part, Rp (A) is the reflectivity in second district, and Rp (B) is the reflectivity in first district.As mentioned above, can represent the transmissivity of transmissive portions by Δ nd (eff)=λ/2 by the reflectivity of Δ nd (eff)=λ/4 expression reflecting parts.
As mentioned above, the size in the size in first district and second district can be associated with as shown in Figure 4 capacitor.For example, along with the size increase in first district, the electric capacity of the 3rd capacitor (C13) also can increase, and this can further reduce the optical characteristics in first district.When the predetermined portions (rather than entire emission portion) that pixel electrode 117 is formed on reflecting part was middle, pixel electrode 117 taking up room in reflecting part reduced.Can design the single cell gap of LCD device 100 by the size of control reflecting part.
Fig. 5 is the curve map of the optical characteristics of illustration trans-reflecting type LCD device 100.When (for example, when 3V) imposing on pixel electrode 117, the reflectivity of first district (reflecting part I) is lower than the transmissivity of transmissive portions with identical voltage.Reflectivity with second district (reflecting part II) of pixel electrode is higher than the transmissivity of transmissive portions.Therefore, the average optical characteristic in first district of reflecting part and second district can become identical with the optical characteristics of transmissive portions.Trans-reflecting type LCD device 100 can have single cell gap and can operate rightly.
Second embodiment
Fig. 6 is the planimetric map of illustration according to the VA pattern trans-reflecting type LCD device 200 of second embodiment.With compare in conjunction with described first embodiment of Fig. 2 to Fig. 5, the reflecting part in the unit pixel areas of LCD device 200 is different with the size of transmissive portions.In Fig. 2, pixel electrode 117 extends to the only about half of of pixel region.In Fig. 6, half that pixel electrode 117 extends to above pixel region.
Unit picture element is distinguished into reflecting part and transmissive portions.As shown in Figure 6, reflecting part takies the about 1/4th of unit pixel areas, and transmissive portions takies about 3/4ths of unit pixel areas.Pixel electrode 117 is formed in the predetermined portions of reflecting part.Reflecting part is divided into first district and second district, and pixel electrode 117 is formed in second district of transmissive portions and reflecting part.Second district 136 of reflecting part can be positioned at the central authorities of the sub-pixel of pixel region.
Pixel region can comprise four sub-pixels of performance red (R) look, green (G) look, indigo plant (B) look and white (W) look.Four of pixel region/for the moment, it can show white when reflecting part takies.3/4ths express red, green and blue as transmissive portions.Pixel region shown in Fig. 6 is suitable for showing the R-G-B-W color in its sub-pixel.
The 3rd embodiment
Fig. 7 is the planimetric map of illustration according to the trans-reflecting type LCD device 300 of the 3rd embodiment.Fig. 8 is the sectional view along the line II-II intercepting of Fig. 7.Trans-reflecting type LCD device 300 has VA pattern (but it is not limited thereto), and available normal black pattern.In the 3rd embodiment, unit picture element is distinguished at least two zones, and along the zone that the different directions friction is divided, forms a plurality of territories thus.In this embodiment, can in pixel electrode 117 or public electrode 115, not form patterns of openings 117a.As another kind select or additional be on pixel electrode 117 or public electrode 115, not form flank 134.
As shown in Figure 7 and Figure 8, VA pattern trans-reflecting type LCD device 300 comprise first substrate 102 as thin-film transistor array base-plate, as second substrate 110 of color filter array substrate and be inserted in first substrate 102 that faces with each other and the liquid crystal layer 150 between second substrate 110.Each pixel region all is divided into transmissive portions and reflecting part, and reflecting part is divided into first district (reflecting part I) that does not wherein form pixel electrode and second district (reflecting part II) that wherein is formed with pixel electrode.Reflecting part is formed in the part that comprises thin film transistor (TFT), and transmissive portions is formed in other parts.In addition, can below first substrate 102, back light unit be set.
In the 3rd embodiment, in the entire emission portion of pixel region, do not form pixel electrode 117, but be formed on it in transmissive portions and second district adjacent of reflecting part with transmissive portions in.Be formed on the size of the size of the pixel electrode in the transmissive portions of pixel region greater than the pixel electrode in the reflecting part that is formed on pixel region.
Although not shown, on first substrate 102, second substrate 110 or both, be formed with both alignment layers.Each pixel region all is divided at least two zones, and by the rub both alignment layers of respective regions of each pixel of different directions, forms a plurality of territories thus.
Can control the size in first district (reflecting part I) that does not have pixel electrode and have the size in second district (reflecting part II) of pixel electrode based on the voltage (Vp (B)) of reflecting part.When identical voltage is imposed on reflecting part and transmissive portions, can be implemented in the single cell gap trans-reflecting type LCD device 300 that has different birefringent ratios (Δ eff) in reflecting part and the transmissive portions.Single cell gap based on the pixel electrode position has above capacitor arrangement described in conjunction with Figure 4.
As the aforementioned description in conjunction with embodiment, trans-reflecting type LCD device has single cell-gap configuration.Transmissive portions and reflecting part have identical cell gap by the control to the birefringence (Δ neff) of liquid crystal.First district that can be by changing reflecting part and the size in second district also only extend to pixel electrode the birefringence (Δ neff) of controlling liquid crystal in second district.Trans-reflecting type LCD device does not comprise the outer covering layer that is used to produce two cell gaps.Can not need the additional manufacturing process relevant with outer covering layer, therefore can simplified manufacturing technique.Thus, make the optical characteristics of transmissive portions and reflecting part become consistent each other by the technology of simplifying.And, not having under the situation of outer covering layer, reflecting part can obtain the operating characteristic that phase differential is Δ nd=λ/4.Because do not form outer covering layer, thus defective orientation is minimized, and realize not having the single cell gap of step difference.Therefore, yield rate can be improved, and the unit cost of device can be reduced.
It will be apparent to those skilled in the art that under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations the present invention.Thereby, the present invention be intended to contain fall into claims and equivalent thereof scope in to various modifications and variations of the present invention.
The application requires the korean patent application No.P2006-61537 that submits on June 30th, 2006 and the right of priority of the korean patent application No.P2007-40231 that submits on April 25th, 2007, by reference its full content is merged therewith.
Claims (15)
1, a kind of transflective liquid crystal display device, this transflective liquid crystal display device comprises:
First substrate, this first substrate has thin film transistor (TFT);
Second substrate, this second substrate has color filter, and in the face of described first substrate;
Liquid crystal layer, this liquid crystal layer are arranged between described first substrate and described second substrate;
Pixel electrode, this pixel electrode are arranged on described first substrate top, and are electrically connected to described thin film transistor (TFT); And
Pixel region, this pixel region is configured to, and is divided into transmissive portions and reflecting part, and wherein, described reflecting part comprises first district and second district;
Wherein, described pixel electrode extends to only described second district of described transmissive portions and described reflecting part, and described pixel region has single cell gap.
2, transflective liquid crystal display device according to claim 1, wherein, described second district of described reflecting part is arranged on the central authorities of described reflecting part.
3, transflective liquid crystal display device according to claim 1, wherein, when applying identical voltage, described first district has antiradar reflectivity, and described second district has high reflectance.
4, transflective liquid crystal display device according to claim 1, wherein, described first district and described second district comprise first group capacitor, described transmissive portions comprises second group capacitor, and described first group capacitor and described second group capacitor are according to the cell gap mode identical with cell gap in the described reflecting part in the described transmissive portions constructed.
5, transflective liquid crystal display device according to claim 4, wherein, described first group capacitor comprises:
Liquid crystal capacitor, this liquid crystal capacitor are formed between described pixel electrode and the public electrode; And
First capacitor, this first capacitor is formed between described pixel electrode and the reflector plate;
Wherein, described public electrode is arranged on described second substrate, and described reflector plate is arranged between described pixel electrode and described first substrate, and the light by described liquid crystal layer is reflected.
6, transflective liquid crystal display device according to claim 5, wherein, described first group capacitor also comprises:
Second capacitor, this second capacitor is formed between described reflector plate and the described public electrode, and utilizes described liquid crystal layer as dielectric layer;
The 3rd capacitor, the 3rd capacitors in series are connected to described second capacitor, and are formed between described reflector plate and the described public electrode, and the 3rd capacitor utilizes insulation course as dielectric layer; And
The 4th capacitor, the 4th capacitors in series are connected to described the 3rd capacitor, and are formed between the drain electrode of described reflector plate and described thin film transistor (TFT).
7, transflective liquid crystal display device according to claim 5, wherein, described second district comprises described liquid crystal capacitor and described first capacitor.
8, transflective liquid crystal display device according to claim 6, wherein, described first district comprises described second capacitor, described the 3rd capacitor and described the 4th capacitor.
9, transflective liquid crystal display device according to claim 4, wherein, described second group capacitor comprises:
Holding capacitor, this holding capacitor are formed between the drain electrode and concentric line of described thin film transistor (TFT); And
Liquid crystal capacitor, this liquid crystal capacitor is formed between described pixel electrode and the public electrode.
10, transflective liquid crystal display device according to claim 3, wherein, the average reflectance in described first district and described second district is identical with the transmissivity of described transmissive portions.
11, a kind of trans-reflecting type display device with normal black pattern, this trans-reflecting type display device comprises:
Pixel region, this pixel region comprises:
Reflecting part, this reflecting part comprise first district and second district, and with phase delay λ/4 of light, wherein, λ is that the optical phase of liquid crystal is put off; And
Transmissive portions, this transmissive portions are with phase delay λ/2 of light, and this transmissive portions and described reflecting part have single cell gap;
Pixel electrode, this pixel electrode extend to described second district and the described transmissive portions of described reflecting part; And
Public electrode, this public electrode is in the face of described pixel electrode.
12, trans-reflecting type display device according to claim 11, this trans-reflecting type display device also comprise and are formed on described pixel electrode, described public electrode or one or more slit in the two.
13, trans-reflecting type display device according to claim 11, this trans-reflecting type display device also comprise and are formed on described pixel electrode, described public electrode or one or more flank in the two.
14, trans-reflecting type display device according to claim 11, wherein, described reflecting part takies 1/4th of described pixel region, and described transmissive portions takies 3/4ths of described pixel region.
15, trans-reflecting type display device according to claim 14, wherein, described pixel region comprises express red, green, blueness and four white sub-pixels.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20060061537 | 2006-06-30 | ||
| KR1020060061537 | 2006-06-30 | ||
| KR1020070040231 | 2007-04-25 |
Publications (2)
| Publication Number | Publication Date |
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| CN101097384A CN101097384A (en) | 2008-01-02 |
| CN100592182C true CN100592182C (en) | 2010-02-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710126905A Expired - Fee Related CN100592182C (en) | 2006-06-30 | 2007-06-29 | Transflective type liquid crystal display device |
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| Country | Link |
|---|---|
| KR (1) | KR101286495B1 (en) |
| CN (1) | CN100592182C (en) |
| TW (1) | TWI404997B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4689900B2 (en) * | 2001-08-22 | 2011-05-25 | Ｎｅｃ液晶テクノロジー株式会社 | Liquid crystal display |
| KR20030058012A (en) * | 2001-12-29 | 2003-07-07 | 엘지.필립스 엘시디 주식회사 | transflective liquid crystal displays |
| KR100519377B1 (en) * | 2003-04-08 | 2005-10-06 | 엘지.필립스 엘시디 주식회사 | An array substrate for transflective LCD and method for fabricating of the same |
| JP4165337B2 (en) * | 2003-08-18 | 2008-10-15 | セイコーエプソン株式会社 | Liquid crystal display device and electronic device |
| JP3861895B2 (en) * | 2004-09-08 | 2006-12-27 | 三菱電機株式会社 | Transflective liquid crystal display device and manufacturing method thereof |
| KR101107681B1 (en) * | 2004-12-29 | 2012-01-25 | 엘지디스플레이 주식회사 | In-plane Switching Mode Liquid Crystal Display Device And Method For Fabricating The Same |
-
2007
- 2007-04-25 KR KR1020070040231A patent/KR101286495B1/en active IP Right Grant
- 2007-06-27 TW TW096123250A patent/TWI404997B/en not_active IP Right Cessation
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| Publication number | Publication date |
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| TW200801678A (en) | 2008-01-01 |
| TWI404997B (en) | 2013-08-11 |
| CN101097384A (en) | 2008-01-02 |
| KR20080003209A (en) | 2008-01-07 |
| KR101286495B1 (en) | 2013-07-17 |
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