CN100588922C - Negative temperature coefficient sensing component structure and method of manufacture - Google Patents
Negative temperature coefficient sensing component structure and method of manufacture Download PDFInfo
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- CN100588922C CN100588922C CN200710107879A CN200710107879A CN100588922C CN 100588922 C CN100588922 C CN 100588922C CN 200710107879 A CN200710107879 A CN 200710107879A CN 200710107879 A CN200710107879 A CN 200710107879A CN 100588922 C CN100588922 C CN 100588922C
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Abstract
The invention relates to a structure of a sensing component of negative temperature coefficients and a manufacturing method thereof. The manufacturing method includes the following steps: preparing analumina base plate; coating a conductive electrode at the back surface of the base plate with silver paste; manufacturing a lower electrode at the front surface of the base plate with the silver paste; coating a resistant layer above the lower electrode with resistant paste; coating a layer of upper electrode above the resistant layer; finishing the procedures with laser and vertically cutting agap which goes through the layer of upper electrode; coating the upper electrode, the resistant layer and the lower electrode as a protecting layer with the epoxy resin (Epoxy); making a terminal electrode with nichrome alloy; stripping every lump unit; coating a nickel coating and a tin coating outside each lump unit so as to form good adhesion with a PC plate.
Description
Technical field
The present invention relates to a kind of structure and manufacture method thereof of negative temperature coefficient sensing component, be meant the sensing resistor value that to adjust negative temperature coefficient sensing component by the position of laser reconditioning upper electrode layer especially.
Background technology
Thermistor (Thermistor, the abbreviation of Thermal Resistor) is a kind of resistive element of high-temperature coefficient, with regard to the size of its resistance coefficient, is to belong to semiconductor; And according to the temperature variant situation of its resistance value, mainly it can be divided into negative temperature coefficient (NTC, Negative Temperature Coefficient) thermistor and positive temperature coefficient (PTC) (PTC, Positive Temperature Coefficient) thermistor is two kinds.
Negative temperature coefficient resister (Negative Temperature Coefficient of Resistivity, NTC), resistance value is higher when having low temperature, the lower characteristic of resistance value during high temperature, utilize its resistance characteristic quite responsive to temperature, negative temperature coefficient resister can be made into all kinds of thermometric assemblies, line resistance compensation assembly, wind gage, liquid level gauge, hygrometer or excess current and suppress assembly.Its characteristic comprises:
Resistance-temperature characteristics: under certain power, the resistance value of NTC can descend with the rising of temperature, because its temperature coefficient is very big, so can detect small temperature variation, therefore is widely used in measurement, control and the compensation of temperature.
I-E characteristic: when the electric current that feeds is little, make the adstante febre of assembly own hardly, resistance value is a certain value.When the electric current increase, the Joule heat that the NTC thermistor produces rises (self-heating) temperature of assembly itself, and carries out heat interchange with environment.The typical case of this I-E characteristic is applied as liquid level sensor, and its ultimate principle is to utilize the NTC thermistor in liquid and airborne heat leakage difference; As previously mentioned, the NTC thermistor passes to and produces Joule heat behind the electric current and heat up, and its heat conducts to surrounding medium, equilibrium temperature will be with the medium kind difference.Utilize this phenomenon can detect the NTC thermistor in liquid or in the air, with in good time startup warning lamp.
Current-time characteristic: another important parameter of NTC thermistor is the time, even also the NTC thermistor changes to the required time of another resistance value from a certain resistance value.When beginning to power up when being pressed on the NTC thermistor is the state of deciding resistance, deciding electric current, in that then resistance descends, electric current increases from thermal region (self-heating).Its change speed then be added on the NTC thermistor on the power and the factors such as Thermal Mass, shapes/configurations and environmental aspect of assembly itself relevant.This current-time characteristic can be used for suppressing burst current, is unlikely to again the total current of circuit is caused too much influence.Therefore be widely used in the switched power supplier of OA machine, during with the inhibition electric power starting, the burst current of initiation so can prevent the fusing and protection electronic circuit and other electronic package of fuse, to improve the fiduciary level of OA machine.
Along with the microelectronics based on micro computer is popularized fast, display is widely applied, and visit development in science and technology and the process technique progress is grant, the application of NTC unit/assembly is also constantly expanded, and the market demand and product range of application more contain electronics, information, communication, household electrical appliances, automobile, give birth to related industries such as doctor, space flight.
More because electronic product develops towards the direction of " light, thin, short, little ", thereby SMD LED surface-mount device LED negative tempperature coefficient thermistor (SMD NTCR) becomes another development trend of this series products, its main application is for supplying products uses such as motherboard, NB and mobile phone.
But along with the range of application of negative tempperature coefficient thermistor is day by day extensive, more accurate quality requirements improves relatively, for example requires resistance variations is controlled in plus or minus 1 percentage range.Traditionally, there is the big problem of error in SMD type negative tempperature coefficient thermistor.
Summary of the invention
Purpose of the present invention is intended to provide a kind of structure of negative temperature coefficient sensing component, means negative temperature coefficient sensing component inside, is provided with one at least as the slit of adjusting the sensing resistor value.
An of the present invention purpose is to provide a kind of structure of negative temperature coefficient sensing component, and the slit that it is located at negative temperature coefficient sensing component inside is to form through the laser reconditioning processing procedure.
A further object of the present invention is to provide a kind of structure of negative temperature coefficient sensing component, and by the position that changes the slit, the sensing area must change, and adjusts the resistance sensing value.
The present invention adopts following technological means to realize:
A kind of structure of negative temperature coefficient sensing component comprises: an aluminum oxide substrate; One is mounted on the conductive electrode of substrate back both sides; One is located at the lower electrode layer of substrate front side one end; One is located at the resistive layer of lower electrode layer and part substrate top; One is located at the resistive layer top, is positioned at the upper electrode layer of the substrate other end; One protective seam coats partly upper electrode layer, resistive layer and part lower electrode layer; And two end electrodes, be the two sides that are coated on substrate; It is characterized in that: upper and lower each other relative part between the described upper electrode layer, itself and lower electrode layer is provided with the slit of vertically running through together therebetween at least.
Aforesaid upper electrode layer and lower electrode layer all have the extension that mediad one side is extended, and described slit system is formed on the position of extension of upper electrode layer.
An aforesaid locational slit that is formed at the extension of upper electrode layer must be in order to adjust the resistance sensing value by the position that changes this slit.
Aforesaid protective seam is to use epoxy resin (Epoxy).
Aforesaid upper electrode layer and lower electrode layer are formed with the silver paste lining.
A kind of manufacture method of negative temperature coefficient sensing component, its manufacturing step comprises: prepare an aluminum oxide substrate;
At the back side of substrate, near end positions with the silver paste conductive electrode that is covered; Front at substrate makes lower electrode layer with silver paste, and lower electrode layer is located at the position near substrate one end, and mediad one side of lower electrode layer extends to form side T shape;
The top of lower electrode layer is with the resistance paste resistive layer that is covered, partly resistive layer cover lower electrode layer in the middle of extend partly, partly resistive layer is layed onto the surface of substrate; Above resistive layer, with the silver paste upper electrode layer that is covered, the position of upper electrode layer is left and right relative with the position of lower electrode layer, the side T shape that the central authorities of upper electrode layer also extend to a side, the extension part of upper electrode layer and the extension of bottom electrode are partly, and be each other across resistive layer, upper and lower relative;
Laser reconditioning, vertically cutting runs through the extension slit partly, center of upper electrode layer together; Partly do protective seam in the top of upper electrode layer with epoxy resin (Epoxy) lining, and coat resistive layer and lower electrode layer and insert slit between upper electrode layer partly; With nickel-chrome at the both sides of substrate manufacturing terminal electrode; Each block unit is peeled off along line of cut;
Again in each block unit external lining nickel dam and tin layer; Make single negative temperature coefficient sensing component.
The present invention compared with prior art has following remarkable advantages and beneficial effect:
The structure of a kind of negative temperature coefficient sensing component of the present invention is provided with one as the slit of adjusting the sensing resistor value.
It is located at the slit of negative temperature coefficient sensing component inside, forms through the laser reconditioning processing procedure.Change the position in slit, the sensing area must change, and adjusts the resistance sensing value.With nickel-chrome manufacturing terminal electrode; Each block unit is peeled off; In each block unit outside lining nickel dam and tin layer, constitute good sticking together again with the PC plate.
Description of drawings
Figure 1A is the first road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Figure 1B is the sectional view of Figure 1A;
Fig. 2 A is the second road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 2 B is the sectional view of Fig. 2 A;
Fig. 3 A is the 3rd a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 3 B is the sectional view of Fig. 3 A;
Fig. 4 A is the 4th a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 4 B is the sectional view of Fig. 4 A;
Fig. 5 A is the 5th a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 5 B is the sectional view of Fig. 5 A;
Fig. 6 A is the 6th a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 6 B is the sectional view of Fig. 6 A;
Fig. 7 A is the 7th a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 7 B is the sectional view of Fig. 7 A;
Fig. 8 A is the 8th a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 8 B is the sectional view of Fig. 8 A;
Fig. 9 A is the 9th a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Fig. 9 B is the sectional view of Fig. 9 A;
Figure 10 A is the tenth a road program planimetric map of the manufacture method of negative temperature coefficient sensing component of the present invention;
Figure 10 B is the sectional view of Figure 10 A;
Figure 11 is the partial perspective view of the structure of expression negative temperature coefficient sensing component of the present invention.
Embodiment
Below in conjunction with accompanying drawing specific embodiments of the invention are illustrated:
The structure of negative temperature coefficient sensing component of the present invention is obtained according to following manufacturing step, comprising: see also shown in Figure 1A, Figure 1B, prepare an aluminum oxide substrate 11; At the back side of substrate 11, see also shown in Fig. 2 A, Fig. 2 B, close two side ends position is with silver paste lining conductive electrode 12;
See also shown in Fig. 3 A, Fig. 3 B, make lower electrode layer 13 in the front of substrate 11 with silver paste, lower electrode layer 13 is located at the position near substrate one side, and mediad one side of lower electrode layer 13 extends to form side T shape;
See also shown in Fig. 4 A, Fig. 4 B, with resistance paste lining one deck resistive layer 14, partly resistive layer 14 covers the middle part 131 of extending of lower electrode layer 13 above lower electrode layer 13, and partly resistive layer 14 is layed onto the surface of substrate 11;
See also shown in Fig. 5 A, Fig. 5 B, above resistive layer 14, with silver paste lining one deck upper electrode layer 15, the position of upper electrode layer 15 is left and right relative with the position of lower electrode layer 13, upper electrode layer 15 central authorities extend to form side T shape to a side, the extension part 151 of upper electrode layer 15 and the extension part 131 of bottom electrode, each other across resistive layer 14, upper and lower relative; See also shown in Fig. 6 A, Fig. 6 B, laser reconditioning, vertically cutting runs through the slit 16 of the center extension part 151 of upper electrode layer 15 together;
See also shown in Fig. 7 A, Fig. 7 B, protective seam 17 is done in the top that is overlayed on part upper electrode layer 15 with epoxy resin (Epoxy), and coats resistive layer 14 and part lower electrode layer 13, and inserts the slit 16 between the upper electrode layer 15; See also shown in Fig. 8 A, Fig. 8 B, with nickel-chrome at the both sides of substrate manufacturing terminal electrode 18;
See also shown in Fig. 9 A, Fig. 9 B,, peel off along line of cut 19 with each block unit 20;
See also shown in Figure 10 A, Figure 10 B, in each block unit outside lining nickel dam and tin layer, constitute good sticking together with the PC plate, and then make single negative temperature coefficient sensing component 3 again.
Please refer to shown in Figure 11ly, by the prepared negative temperature coefficient sensing component of above-mentioned steps, according to resistance formula R=ρ * L/A, wherein, ρ is a constant, and L is the distance between upper electrode layer and the lower electrode layer, and A is the surface area BxC that the lower electrode layer end is arrived in the slit.Therefore, when desire is adjusted the sensing resistor value of negative temperature coefficient sensing component, as long as can reach in the position of upper electrode layer 151 via adjusting the slit.
It should be noted that at last: above embodiment only in order to the explanation the present invention and and unrestricted technical scheme described in the invention; Therefore, although this instructions has been described in detail the present invention with reference to each above-mentioned embodiment,, those of ordinary skill in the art should be appreciated that still and can make amendment or be equal to replacement the present invention; And all do not break away from the technical scheme and the improvement thereof of the spirit and scope of invention, and it all should be encompassed in the middle of the claim scope of the present invention.
Claims (6)
1. the structure of a negative temperature coefficient sensing component is characterized in that: comprising:
One aluminum oxide substrate; One is mounted on the conductive electrode of substrate back both sides; One is located at the lower electrode layer of substrate front side one end; One is located at the resistive layer of lower electrode layer and part substrate top; One is located at the resistive layer top, is positioned at the upper electrode layer of the substrate other end; One protective seam coats partly upper electrode layer, resistive layer and part lower electrode layer; And
Two end electrodes is for being coated on the two sides of substrate; It is characterized in that: upper and lower each other relative part between the described upper electrode layer, itself and lower electrode layer is provided with the slit of vertically running through together therebetween at least.
2. the structure of negative temperature coefficient sensing component according to claim 1, wherein said upper electrode layer and lower electrode layer all have the extension that mediad one side is extended, and described slit is to be formed on the position of extension of upper electrode layer.
3. the structure of negative temperature coefficient sensing component according to claim 1, a wherein said locational slit that is formed at the extension of upper electrode layer must be in order to adjust the resistance sensing value by the position that changes this slit.
4. the structure of negative temperature coefficient sensing component according to claim 1, wherein said protective seam is to use epoxy resin.
5. the structure of negative temperature coefficient sensing component according to claim 1, wherein said upper electrode layer and lower electrode layer are by being formed with the silver paste lining.
6. the manufacture method of a negative temperature coefficient sensing component, its manufacturing step comprises:
Prepare an aluminum oxide substrate;
At the back side of substrate, near end positions with the silver paste conductive electrode that is covered;
Front at substrate makes lower electrode layer with silver paste, and lower electrode layer is located at the position near substrate one end, and mediad one side of lower electrode layer extends to form side T shape;
The top of lower electrode layer is with the resistance paste resistive layer that is covered, partly resistive layer cover lower electrode layer in the middle of extend partly, partly resistive layer is layed onto the surface of substrate;
Above resistive layer, with the silver paste upper electrode layer that is covered, the position of upper electrode layer is left and right relative with the position of lower electrode layer, the central authorities of upper electrode layer also extend to form side T shape to a side, the extension part of upper electrode layer and the extension of bottom electrode are partly, and be each other across resistive layer, upper and lower relative;
Laser reconditioning, vertically cutting runs through the extension slit partly, center of upper electrode layer together;
Partly do protective seam in the top of upper electrode layer with epoxy resin lining, and coat resistive layer and lower electrode layer and insert slit between upper electrode layer partly;
With nickel-chrome at the both sides of substrate manufacturing terminal electrode;
Each block unit is peeled off along line of cut;
Again in each block unit outside lining nickel dam and tin layer;
Make single negative temperature coefficient sensing component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710107879A CN100588922C (en) | 2007-05-21 | 2007-05-21 | Negative temperature coefficient sensing component structure and method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710107879A CN100588922C (en) | 2007-05-21 | 2007-05-21 | Negative temperature coefficient sensing component structure and method of manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101311690A CN101311690A (en) | 2008-11-26 |
| CN100588922C true CN100588922C (en) | 2010-02-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710107879A Expired - Fee Related CN100588922C (en) | 2007-05-21 | 2007-05-21 | Negative temperature coefficient sensing component structure and method of manufacture |
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| Country | Link |
|---|---|
| CN (1) | CN100588922C (en) |
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- 2007-05-21 CN CN200710107879A patent/CN100588922C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN101311690A (en) | 2008-11-26 |
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Granted publication date: 20100210 Termination date: 20130521 |