CN100586849C - Method and device for removing foreign matter phosphor in polysilicon - Google Patents
Method and device for removing foreign matter phosphor in polysilicon Download PDFInfo
- Publication number
- CN100586849C CN100586849C CN200810011949A CN200810011949A CN100586849C CN 100586849 C CN100586849 C CN 100586849C CN 200810011949 A CN200810011949 A CN 200810011949A CN 200810011949 A CN200810011949 A CN 200810011949A CN 100586849 C CN100586849 C CN 100586849C
- Authority
- CN
- China
- Prior art keywords
- electron beam
- beam gun
- polysilicon
- vacuum
- rotating shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 52
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000010894 electron beam technology Methods 0.000 claims abstract description 79
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000010949 copper Substances 0.000 claims abstract description 65
- 229910052802 copper Inorganic materials 0.000 claims abstract description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 11
- 239000002210 silicon-based material Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 238000007499 fusion processing Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000010309 melting process Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Images
Abstract
The invention relates to a method for removing impurity phosphor from polysilicon and a device thereof, in particular to a method for removing impurity phosphor from polysilicon by electronic torch melting technology and the device thereof, which belongs to the technical field of purifying polysilicon by physicometallurgy technology. The method is characterized in that polysilicon can be fully melted by the dual electron beams while water cooled copper crucible is rotated, polysilicon can be added in the melting process to realize continuous operation, thus removing the impurity phosphor frompolysilicon. Polysilicon is put into the water cooled copper crucible, the cover of a vacuum apparatus is closed; and then the water cooled copper is vacuumized, a left electron gun and a right electron gun are preheated. The shell of the device consists of a vacuum apparatus cover and a vacuum drum, the internal cavity of the vacuum drum is a vacuum chamber. The harmful impurity phosphor in polysilicon is thoroughly removed by the electron beam melting, which effectively improves the purity of polysilicon and realizes the continuous operation. The method has high efficiency; the device is simple and saves energy.
Description
Technical field
The invention belongs to technical field, particularly a kind of method and apparatus that utilizes the electron beam melting technology that the foreign matter of phosphor in the polysilicon is removed with physical metallurgy technology purifying polycrystalline silicon.
Background technology
High purity polycrystalline silicon is the main raw material of preparation solar cell.External preparation high purity polycrystalline silicon mainly uses Siemens Method, is specially silane decomposition method and chlorosilane gas phase hydrogen reduction method, wherein SiHCl
3Method is that Siemens Method is the mainstream technology of present polysilicon preparation.SiHCl
3The useful deposition rate of method is 1 * 10
3, be SiH
4100 times.The Siemens Method sedimentation velocity can reach 8～10 μ m/min.One-pass efficiency of conversion is 5%～20%, and depositing temperature is 1100 ℃, is only second to SiCl
4(1200 ℃), current consumption are about 120kWh/kg, and power consumption is also higher.Domestic SiHCl
3The power consumption of method is reduced to 200kWh/kg by 500kWh/kg through effort for many years, and the silicon rod diameter reaches about 100mm.The weak point of Siemens Method is it has taked backwardness on the core link of flow process thermal chemical vapor deposition, and the link of technical process is too much, and one time transformation efficiency is low, causes the flow process time oversize, has increased material consumption, energy consumption cost.Given this, metallurgy method is the mode of carrying out directional freeze according to the segregation coefficient difference of impurity element in silicon in the novel process of numerous preparations, has the advantages that energy consumption is low, environmental pollution is little.Simple directional solidification process can't be removed the bigger foreign matter of phosphor of segregation coefficient, and in numerous impurity of polysilicon, phosphorus is detrimental impurity, has directly influenced the resistivity and the minority carrier lifetime of silicon materials, and then has influenced the photoelectric transformation efficiency of solar cell.The polysilicon phosphorus content that can be used as the preparation solar cell requires to be reduced to below 0.0001%, known Japanese Patent No. is the patent of invention of 11-20195, utilize electron beam to reach the purpose of removing phosphorus in the polysilicon, but the shortcoming of this invention is the impurity that electron beam can only be removed the liquid-state silicon surface, because of stirring and overturn, to the Impurity removal DeGrain of solution inside to solution.
Summary of the invention
The technical barrier that the present invention will solve is the shortcoming that overcomes above-mentioned technology, adopt the electron beam melting technology, utilize the upset of rotation crucible, effectively melting is carried out in the surface of liquid towards silicon and inside, melting is more abundant, impurity element phosphorus in the polysilicon is removed to 0.0001% degree, and then reaches the service requirements of silicon material for solar cells.
The technical scheme that the present invention takes is a kind of method of removing foreign matter of phosphor in the polysilicon, adopt electron beam to remove foreign matter of phosphor in the polysilicon, adopt twin-cathode ray beam in this method, mode with the rotation water jacketed copper crucible makes electron beam fully carry out melting to polysilicon, can in fusion process, feed in raw material and realize working continuously, remove foreign matter of phosphor in the polysilicon, its step is as follows:
1), polycrystalline silicon material is packed in the water jacketed copper crucible, the Intake Quantity of polysilicon is 1/3rd positions of water jacketed copper crucible, closes the vacuum unit lid;
2, vacuum is extracted into rough vacuum 10 with mechanical pump, Lodz pump with vacuum chamber earlier
-0Pa is extracted into high vacuum 10 with diffusion pump again
-3Below the pa;
3, give left electron beam gun, right electron beam gun preheating, it is 25-35kW that high pressure is set, and high pressure is closed in high pressure preheating 5-10 minute, left electron beam gun is set, right electron beam gun line is 70-200mA, and left electron beam gun, right electron beam gun line are closed in line preheating 5-10 minute;
4, open the high pressure and the line of left electron beam gun, right electron beam gun simultaneously, stable back increases left electron beam gun, right electron beam gun line to 500-800mA with left electron beam gun, right electron beam gun bombardment polycrystalline silicon material, continues bombardment 20-50 minute, all melts up to polycrystalline silicon material;
5, regulate the line of right electron beam gun to zero, the rotating machinery rotating shaft, mechanical rotating shaft drives water jacketed copper crucible 45 ° of the direction deflections of electron beam gun left, with left electron beam gun bombardment 20-40 minute, the opposite spin mechanical rotating shaft, mechanical rotating shaft drives 45 ° of water jacketed copper crucible counter-rotatings, the playback of rotation water jacketed copper crucible;
6, increase the line of right electron beam gun to 500-800mA, the line of adjusting left electron beam gun is to zero, the rotating machinery rotating shaft, mechanical rotating shaft drives water jacketed copper crucible 45 ° of the direction deflections of electron beam gun to the right, with right electron beam gun bombardment 20-40 minute, continue the rotating machinery rotating shaft, mechanical rotating shaft drives water jacketed copper crucible 45 ℃ of electron beam gun deflections to the right again, perpendicular to right electron beam gun, after pouring into liquid-state silicon in the water-cooled copper container, the reverse rotation mechanical rotating shaft, mechanical rotating shaft drives the water jacketed copper crucible positive dirction and rotates 90 °, and water jacketed copper crucible is being playbacked;
7, drop into polysilicon to water jacketed copper crucible by opening for feed again, the 4-6 step is repeated in the position to 1/3rd, works continuously;
8, close left electron beam gun, right electron beam gun;
9, close successively diffusion pump, Lodz pump, when mechanical pump treats that temperature drops to 200 ℃ of left and right sides, open purging valve, open vacuum unit lid and from the water-cooled copper container, take out silicon materials.
Described a kind of used device of the method for foreign matter of phosphor in the polysilicon of removing is by vacuum unit lid and vacuum drum constituent apparatus shell, vacuum drum inner chamber is vacuum chamber, the water jacketed copper crucible on the left side is fixed on the copper stent in the vacuum chamber, mechanical rotating shaft passes copper stent and copper pallet, the copper pallet is fixed on the equipment shell, the rotating range of water jacketed copper crucible is :-45 °-90 °, left side electron beam gun, right electron beam gun is separately fixed at the top at water jacketed copper crucible two ends, the lower right of vacuum chamber is equipped with the water-cooled copper container, the copper support bar links to each other with the water-cooled copper container, weld, mechanical pump, the Lodz pump, diffusion pump is fixed on the vacuum shell outside, and purging valve is installed in the lower left quarter of vacuum shell.
The unusual effect of invention is deleterious foreign matter of phosphor in the silicon suitable for solar purposes material can be removed with electron beam melting, fully fully, has effectively improved the purity of polysilicon, realizes working continuously, and has the efficient height, installs advantage simple, save energy.
Description of drawings
Accompanying drawing 1 is for removing the device of foreign matter of phosphor in the polysilicon, accompanying drawing 2 be in the accompanying drawing 1 melting partly right view.Among the figure, 1. right electron beam gun, 2. vacuum unit lid, 3. vacuum chamber, 4. polycrystalline silicon material, 5. water jacketed copper crucible, 6. water-cooled copper container, 7. mechanical pump, 8. Lodz pump, 9. diffusion pump, 10. copper support bar, 11. purging valves, 12. vacuum drums, 13. polysilicon, 14, dog-house, 15. left electron beam gun, 16. copper stent, 17. mechanical rotating shafts, 18. bronze medal pallets.
Embodiment
Specific embodiment below in conjunction with technical scheme and accompanying drawing detailed description this programme.
With purity is 99.8%, and wherein the content of foreign matter of phosphor is that 0.005% polycrystalline silicon material 4 is packed in the water jacketed copper crucible 5, and the Intake Quantity of polysilicon is 1/3rd positions of water jacketed copper crucible 5, closes vacuum unit lid 2.Carry out vacuum process, with mechanical pump 7, Lodz pump 8 vacuum chamber 3 is extracted into rough vacuum 10 earlier
-0Pa is extracted into high vacuum 10 with diffusion pump 9 again
-3Below the pa; To left electron beam gun 15,1 preheating of right electron beam gun, it is 25kW that high pressure is set, and high pressure is closed in high pressure preheating 5 minutes, left electron beam gun 15 is set, right electron beam gun 1 line is 100mA, and left electron beam gun 15, right electron beam gun 1 line are closed in line preheating 5 minutes; Open the high pressure and the line of left electron beam gun 15, right electron beam gun 1 simultaneously, polycrystalline silicon material 4 is bombarded with left electron beam gun 15, right electron beam gun 1 in stable back, increase left electron beam gun 15, right electron beam gun 1 line to 500mA, continue bombardment 20 minutes, all melt up to polycrystalline silicon material 4; Because the saturation vapour pressure difference of foreign matter of phosphor in silicon makes beam bombardment zone phosphorus because the big effusion silicon face of vapour pressure is taken away with gaseous form, thereby reach the effect of dephosphorization.The line of regulating right electron beam gun 1 is to zero, rotating machinery rotating shaft 17, mechanical rotating shaft drives water jacketed copper crucible 5 45 ° of the direction deflections of electron beam gun 15 left, with left electron beam gun 15 bombardments 20 minutes, guarantee that the silicon materials of bottom also obtain the melting of electron beam, opposite spin mechanical rotating shaft 17, mechanical rotating shaft drives 45 ° of water jacketed copper crucible 5 counter-rotatings, 5 playback of rotation water jacketed copper crucible, the line that increases right electron beam gun 1 is to 500mA, the line of adjusting left electron beam gun 15 is to zero, rotating machinery rotating shaft 17, mechanical rotating shaft drives water jacketed copper crucible 5 45 ° of the direction deflections of electron beam gun 1 to the right, with right electron beam gun 1 bombardment 20 minutes, continue rotating machinery rotating shaft 17, mechanical rotating shaft drives water jacketed copper crucible 5 45 ℃ of electron beam gun 1 deflections to the right again, perpendicular to right electron beam gun 1, after pouring into liquid-state silicon in the water-cooled copper container 6, reverse rotation mechanical rotating shaft 17, mechanical rotating shaft drives water jacketed copper crucible 5 positive dirctions and rotates 90 °, and water jacketed copper crucible 5 is being playbacked, drop into polysilicon 13 to water jacketed copper crucible 5 by opening for feed 14 again, the 4-6 step is repeated in position to 1/3rd, works continuously.Close left electron beam gun 15, right electron beam gun 1, close diffusion pump 9, Lodz pump 8 successively, when mechanical pump 7 treats that temperature drops to 200 ℃ of left and right sides, open purging valve 11, open vacuum unit lid 2 and from water-cooled copper container 6, take out silicon materials.Through check, the content of impurity has been reduced to 0.00008% degree in the polysilicon.
It is respond well that the present invention removes in the polysilicon foreign matter of phosphor, and process stabilizing is easy to operate, can realize working continuously, and has fully removed the foreign matter of phosphor in the polysilicon, and save energy has improved the efficient of preparation high purity polycrystalline silicon.
Claims (2)
1, a kind of method of removing foreign matter of phosphor in the polysilicon, adopt electron beam to remove foreign matter of phosphor in the polysilicon, it is characterized in that, adopt twin-cathode ray beam in this method, mode with the rotation water jacketed copper crucible makes electron beam fully carry out melting to polysilicon, can feed in raw material in fusion process and realize working continuously, remove foreign matter of phosphor in the polysilicon, its step is as follows:
1), polycrystalline silicon material (4) is packed in the water jacketed copper crucible (5), the Intake Quantity of polysilicon is 1/3rd positions of water jacketed copper crucible (5), closes vacuum unit lid (2);
2), vacuum: with mechanical pump (7) and Lodz pump (8) vacuum chamber (3) is extracted into rough vacuum 10 earlier
-0Pa uses diffusion pump (9) to be extracted into high vacuum 10 again
-3Below the pa;
3), give left and right sides electron beam gun (15,1) preheating, it is 25-35kW that high pressure is set, high pressure is closed in high pressure preheating 5-10 minute, it is 70-200mA that left and right sides electron beam gun (15,1) line is set, left and right sides electron beam gun (15,1) line is closed in line preheating 5-10 minute;
4), open the high pressure and the line of left and right sides electron beam gun (15,1) simultaneously, polycrystalline silicon material (4) is bombarded with left and right sides electron beam gun (15,1) in stable back, increase left and right sides electron beam gun (15,1) line to 500-800mA, continue bombardment 20-50 minute, up to all fusings of polycrystalline silicon material (4);
5), regulate the line of right electron beam gun (1) to zero, rotating machinery rotating shaft (17), mechanical rotating shaft drives water jacketed copper crucible (5) 45 ° of the direction deflections of electron beam gun (15) left, with left electron beam gun (15) bombardment 20-40 minute, opposite spin mechanical rotating shaft (17), mechanical rotating shaft drives 45 ° of water jacketed copper crucible (5) counter-rotatings, rotation water jacketed copper crucible (5) playback;
6), the line that increases right electron beam gun (1) is to 500-800mA, the line of adjusting left electron beam gun (15) is to zero, rotating machinery rotating shaft (17), mechanical rotating shaft drives water jacketed copper crucible (5) 45 ° of the direction deflections of electron beam gun (1) to the right, with right electron beam gun (1) bombardment 20-40 minute, continue rotating machinery rotating shaft (17), mechanical rotating shaft drives water jacketed copper crucible (5) 45 ℃ of electron beam gun (1) deflections to the right again, perpendicular to right electron beam gun (1), after pouring into liquid-state silicon in the water-cooled copper container (6), reverse rotation mechanical rotating shaft (17), mechanical rotating shaft drives water jacketed copper crucible (5) positive dirction and rotates 90 °, water jacketed copper crucible (5) is playbacked again;
7), drop into polysilicon (13) to water jacketed copper crucible (5) by opening for feed (14) again, working continuously in the position to 1/3rd, repeats the 4-6 step;
8), close left and right sides electron beam gun (15,1);
9) close diffusion pump (9) and Lodz pump (8) and mechanical pump (7), successively, when treating that temperature drops to 200 ℃ of left and right sides, open purging valve (11), open vacuum unit lid (2) and from water-cooled copper container (6), take out silicon ingot.
2, the described a kind of used device of the method for foreign matter of phosphor in the polysilicon of removing of claim 1, it is characterized in that, by vacuum unit lid (2) and vacuum drum (12) constituent apparatus shell, vacuum drum (12) inner chamber is vacuum chamber (3), the water jacketed copper crucible (5) on the interior left side of vacuum chamber (3) is fixed on the copper stent (16), mechanical rotating shaft (17) passes copper stent (16) and copper pallet (18), copper pallet (18) is fixed on the equipment shell (2), the rotating range of water jacketed copper crucible (5) is :-45 °-90 °, left and right sides electron beam gun (15,1) is separately fixed at the end positions of water jacketed copper crucible (5) top, the lower right of vacuum chamber (3) is equipped with water-cooled copper container (6), copper support bar (10) links to each other with water-cooled copper container (6), weld, mechanical pump (7) and Lodz pump (8) and diffusion pump (9) are fixed on vacuum shell (2) outside, and purging valve (11) is installed in the lower left quarter of vacuum shell (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810011949A CN100586849C (en) | 2008-06-19 | 2008-06-19 | Method and device for removing foreign matter phosphor in polysilicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810011949A CN100586849C (en) | 2008-06-19 | 2008-06-19 | Method and device for removing foreign matter phosphor in polysilicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101318655A CN101318655A (en) | 2008-12-10 |
| CN100586849C true CN100586849C (en) | 2010-02-03 |
Family
ID=40178967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810011949A Expired - Fee Related CN100586849C (en) | 2008-06-19 | 2008-06-19 | Method and device for removing foreign matter phosphor in polysilicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100586849C (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101445957B (en) * | 2008-12-16 | 2011-01-19 | 桂林实创真空数控设备有限公司 | Vacuum electron beam melting furnace for polysilicon purification |
| UA94784C2 (en) * | 2009-07-20 | 2011-06-10 | Частное Акционерное Общество «Пиллар» | Device for producing of ingots of multicrystal silicon by induction |
| CN101708850B (en) * | 2009-11-19 | 2011-09-14 | 大连理工大学 | Method and device for removing phosphorus and boron in polysilicon by continuous smelting |
| CN101787563B (en) * | 2010-03-19 | 2012-05-23 | 大连隆田科技有限公司 | Method and device for removing impurities of phosphorus and boron by induction and electronic beam melting |
| CN101905886B (en) * | 2010-08-02 | 2012-02-15 | 大连理工大学 | Method for purifying polycrystalline silicon by electron beam gradient smelting |
| CN101941698B (en) * | 2010-08-17 | 2012-08-29 | 青岛隆盛晶硅科技有限公司 | Method and device for efficiently removing phosphorus impurities in silicon by electron beam melting |
| CN102126726A (en) * | 2011-01-29 | 2011-07-20 | 大连隆田科技有限公司 | Method and equipment for efficiently purifying polysilicon powder by utilizing electron beams |
| CN102126725B (en) * | 2011-01-29 | 2012-12-19 | 大连隆田科技有限公司 | Method and equipment for purifying polycrystalline silicon by melting in electron beam shallow pool |
| CN102145895B (en) * | 2011-05-16 | 2012-10-03 | 大连隆田科技有限公司 | Method and equipment for purifying polysilicon by utilizing shallow molten pool to carry out vacuum smelting |
| CN102153089B (en) * | 2011-05-19 | 2012-06-27 | 厦门大学 | Method for gettering phosphorus in N-type polysilicon slice by metallurgical method |
| CN102424389B (en) * | 2011-09-13 | 2013-02-27 | 山西纳克太阳能科技有限公司 | Solar-grade polysilicon dephosphorization purification method |
| CN102992327B (en) * | 2012-12-17 | 2014-07-09 | 青岛隆盛晶硅科技有限公司 | Method and equipment for purifying polycrystalline silicon through solidification crucible rotary electron beam melting |
| CN103539126B (en) * | 2013-10-30 | 2016-04-13 | 大连理工大学 | A kind of polysilicon quick setting method |
| CN103818907A (en) * | 2014-03-04 | 2014-05-28 | 黄道德 | Dephosphorizing method for solar battery polycrystalline silicon |
| CN103818908A (en) * | 2014-03-04 | 2014-05-28 | 黄道德 | Manufacturing method for polycrystalline silicon of solar cells |
| CN103896276A (en) * | 2014-03-04 | 2014-07-02 | 黄道德 | Process for removing phosphorus from polycrystalline silicon for solar cell |
| CN104131338B (en) * | 2014-07-17 | 2016-08-24 | 大连理工大学 | Local, electron beam top adds thermocoagulation polysilicon knot screen and polysilicon adds thermocoagulation impurity-removing method |
| CN104878448A (en) * | 2015-05-15 | 2015-09-02 | 大连理工大学 | Polycrystalline silicon zone melting equipment employing electron beam and method for removing impurities |
| CN109133067B (en) * | 2018-10-16 | 2023-06-27 | 青岛蓝光晶科新材料有限公司 | Method and device for improving efficiency of electron beam smelting of polycrystalline silicon |
-
2008
- 2008-06-19 CN CN200810011949A patent/CN100586849C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101318655A (en) | 2008-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100586849C (en) | Method and device for removing foreign matter phosphor in polysilicon | |
| CN101289188B (en) | Process and device for removing phosphorus and metal impurities in polycrystalline silicon | |
| CN101708850B (en) | Method and device for removing phosphorus and boron in polysilicon by continuous smelting | |
| CN102120579B (en) | Method and device for efficiently and continuously smelting and purifying polysilicon with electron beams | |
| CN102992327B (en) | Method and equipment for purifying polycrystalline silicon through solidification crucible rotary electron beam melting | |
| CN101787563B (en) | Method and device for removing impurities of phosphorus and boron by induction and electronic beam melting | |
| CN102126726A (en) | Method and equipment for efficiently purifying polysilicon powder by utilizing electron beams | |
| CN103420380B (en) | Method and device for manufacturing polycrystalline silicon by coupling electron beam smelting technology and directional solidification technology | |
| CN102153088B (en) | Method for carrying out slagging, pickling and boron removal on metal silicon | |
| CN102120578B (en) | Method and device for coupling and purifying polysilicon and removing phosphorus and metal with electron beams | |
| CN102145893B (en) | Method for purifying polysilicon by adopting electron beam to carry out fractionated smelting | |
| CN201981012U (en) | Equipment for effectively purifying polycrystalline silicon powder body by electron beam | |
| CN103420379B (en) | Method and the device thereof of solar-grade polysilicon are prepared in electron beam serialization melting | |
| CN102275929A (en) | Method for improving purity of metallurgical silicon and apparatus for realizing method | |
| CN202968137U (en) | Equipment for smelting and purifying polycrystalline silicon by utilizing solidification crucible and rotary type electron beam | |
| CN101913608B (en) | Method for removing boron from industrial silicon | |
| CN102424388B (en) | Method for removing metallic impurities in solar-grade polysilicon | |
| CN101708849B (en) | Method and device of removing boron in polysilicon by local evaporation | |
| CN103738965B (en) | Method for removal of oxygen from liquid silicon by electron beam melting and device thereof | |
| CN104651930A (en) | Apparatus for preparing polysilicon through electron beam deoxygenation and preliminary ingot casting coupling, and method thereof | |
| CN101905886B (en) | Method for purifying polycrystalline silicon by electron beam gradient smelting | |
| CN203559160U (en) | Device for preparing polycrystalline silicon through coupling of electron beam deoxygenation and initial ingot casting | |
| CN201962076U (en) | Equipment of purification polycrystalline silicon is smelted to an electron beam shallow pool | |
| CN203440095U (en) | Device for preparing solar-grade polycrystalline silicon through electron-beam continuous smelting | |
| CN202046892U (en) | Equipment for purifying polysilicon by efficient and continuous smelting of electron beams |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: QINGDAO LONGSHENG CRYSTAL SILICON TECHNOLOGY CO., Free format text: FORMER OWNER: DALIAN UNIVERSITY OF TECHNOLOGY Effective date: 20120711 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 116024 DALIAN, LIAONING PROVINCE TO: 266000 QINGDAO, SHANDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120711 Address after: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Patentee after: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. Address before: 116024 Liaoning, Dalian, Ganjingzi Ling Road, No. 2 Patentee before: Dalian University of Technology |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20171107 Address after: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee after: Qingdao Changsheng Dongfang Industry Group Co., Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Patentee before: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171127 Address after: Pudong Town Jimo city Shandong province 266234 city of Qingdao Ren Jia Tun Cun Ren Jia Tun Lu Patentee after: QINGDAO NEW ENERGY SOLUTIONS INC. (NESI) Address before: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee before: Qingdao Changsheng Dongfang Industry Group Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100203 Termination date: 20190619 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |