CN100585729C - Structure and access method of magnetic storage unit and magnetic memory circuit - Google Patents
Structure and access method of magnetic storage unit and magnetic memory circuit Download PDFInfo
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- CN100585729C CN100585729C CN200610084560A CN200610084560A CN100585729C CN 100585729 C CN100585729 C CN 100585729C CN 200610084560 A CN200610084560 A CN 200610084560A CN 200610084560 A CN200610084560 A CN 200610084560A CN 100585729 C CN100585729 C CN 100585729C
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Abstract
The invention discloses a magnetic memory reserving unit structure for double-patterned memory operation, which contains magnetic fixed laminate as part of base structure, wherein the magnetic fixed laminate consists of upper fixed layer and lower fixed layer; a big enough magnetic coupling force is formed between the upper and lower fixed layers, which maintains and fixes the magnetization of upper fixed layer at reference direction; one tunnel barrier layer lies on the magnetic fixed laminate; one magnetic free laminate lies on the tunnel barrier layer, which contains lower free layer with lower magnetization and upper free layer with upper magnetization; the lower magnetization parallels the upper magnetization reversely under no operational magnet, which is perpendicular to the reference direction of upper fixed layer; a magnetic biased layer is set on the free layer.
Description
Technical field
The invention relates to a kind of magnetic storage technology, and particularly relevant for a kind of structure, access method and magnetic memory circuit of magnetic memory cell, have low writing current at least and be the characteristic of reference memory unit with the adjoining memory cell.
Background technology
Magnetic storage, for example (Magnetic Random AccessMemory also is a kind of non-volatility memorizer MRAM) to magnetic RAM, and advantages such as non-volatile, highly dense intensity, high read or write speed, radioresistance line are arranged.Be the magnetic distance of utilizing adjacent to the magnetisable material of tunnel barrier layer, because the size of the parallel or antiparallel arrangement magnetic resistance that produces writes down the data of logical zero or logical one.When writing data, general employed method is two electric current lines, for example bit line (Bit Line, BL) and write character line (Write Word Line, WWL) the induced magnetism place magnetic memory cell that occurs simultaneously and to choose by changing free layer magnetization vector direction, is changed its magnetoelectricity resistance.And reading storage during data, and allow the magnetic memory cell inflow current of choosing, can judge the digit value of storage data from the resistance value that reads.
Fig. 1 illustrates the basic structure of a magnetic memory cell.Consulting Fig. 1, access to write a magnetic memory cell, also is the electric current line 100,102 that needs intersection and feed suitable electric current, and it for example is called bit line and character line again according to the mode of operation.After feeding electric current, two leads can produce the magnetic field of two directions, to obtain desired magnetic field size and direction, to be applied on the magnetic memory cell 104.Magnetic memory cell 104 is layered structures, comprises that a magnetic fixed bed (magnetic pinned layer) has fixing magnetization vector (magnetization) at a predetermined direction, or total magnetic is apart from (total magneticmoment).Utilize magnetic free layer and the magnetic fixed bed angle difference of magnetization vector to each other, produce different magneto-resistor sizes, come reading of data.Again,, also can apply one and write magnetic field, the magnetization vector direction of decision magnetic free layer under no magnetic field if write data.By output electrode 106,108, can read the data that this storage unit is deposited.About the details of operation of magnetic storage, be that those skilled in the art can understand, do not continue to describe.
Fig. 2 illustrates the memory mechanism of magnetic storage.In Fig. 2, magnetic fixed bed 104a has fixing magnetic apart from direction 107.Magnetic free layer 104c is positioned at magnetic fixed bed 104a top, is isolated by a tunnel barrier layer 104b in the middle of it.Magnetic free layer 104c has a magnetic apart from direction 108a or 108b.Because magnetic is parallel apart from direction 108a with magnetic apart from direction 107, the magnetic resistance of its generation is for example represented the data of " 0 ", on the contrary magnetic apart from direction 107 and magnetic apart from direction 108b antiparallel, the magnetic resistance of its generation is for example represented the data of " 1 ".
For a magnetic memory cell, the relation of its magnetic resistance (R) and magnetic field H size, as shown in Figure 3.Solid line is represented the corresponding field curve of the magnetic resistance of single magnetic memory cell.Yet magnetic storage device can comprise a plurality of storage unit, and the condition of its each storage unit is not really consistent, so the magnetic resistance line can be just like the variation of dotted line, and this can cause the access write error.Fig. 4 illustrates the array structure of conventional memory cell.The left figure of Fig. 4 is an array structure, and for example by applying two direction magnetic field H x, Hy, 140 accesses write to storage unit.Right figure is the effect that magnetic field H x and Hy are produced for storage unit 140.In the solid line zone,, can not change the store status of storage unit 140 because magnetic field is little.And the magnetic field in the extra-regional limited area of solid line can be suitable for the operation of magnetic field upset.If magnetic field just may be magnetic too greatly and disturb the phenomenon of adjoining memory cell, also be to be not suitable for using.Therefore, generally with the magnetic field of operating area 144 as magnetic manipulation field.Yet because other storage unit 142 also can be experienced the magnetic field that applies, and because the operating conditions of adjoining memory cell 142 changes, this magnetic field that applies also may change the storage data of other storage unit 142.Therefore, as the magnetic free layer 104c of the individual layer of Fig. 2, have the possibility of access write error.
Be at least and address the above problem, some improved other technologies also are suggested.Fig. 5 illustrates the another kind design of traditional magnetic storage unit.In Fig. 5, a magnetic is fixing laminated, is to be coincided by 164 of fixed beds (top pinnedlayer) on fixed bed (bottom pinned layer) 160, the one magnetic couplings wall 162 and once to form.Following fixed bed 160 has a magnetization vector 172, and go up fixed bed 164 magnetization vector 174 is arranged also, and the direction of its magnetization vector is perpendicular to the paper of figure as shown in the figure.The magnetic free layer 168 of individual layer is positioned on the fixed bed 164 in addition, is isolated by a tunnel barrier layer 166.The direction of the magnetization vector 176 of magnetic free layer 168 is to the left or to the right as shown in the figure, and perpendicular to magnetization vector 174.One electrode layer 170 is arranged on magnetic free layer 168, below following fixed bed, also include another inverse ferric magnetosphere, another cushion and another electrode layer (not being shown in Fig. 5) in addition.
Design in the magnetic memory cell of Fig. 5 is to make magnetization vector 172 very weak with the coupling of magnetization vector 174, and magnetization vector 174 can be changed by the magnetic manipulation field (assisted field) that the outside applies.When magnetization vector 174 is rotated some angle by the peripheral operation the action of a magnetic field, by magnetization vector 176 and magnetization vector 174 difference of magnetization vector angle to each other, can judge the direction of magnetization vector 176, therefore can determine the binary bit of its representative.
Fig. 6 illustrates the magnetic memory circuit of being made up of the magnetic memory cell of Fig. 5.In Fig. 6, magnetic memory cell is to arrange with array way, by bit line BLi, BLj with write character line WWLi, WWLj and control.In the time of for example will reading the data that are stored in the storage unit 180, the magnetization vector 188 with last fixed bed rotates a certain angle, and for example be direction towards the right side at the magnetization vector 186 of free layer this moment, so produce a lower magnetoelectricity resistance.Get contiguous storage unit 182 as reference memory unit this moment, directly reads one with reference to the magnetoelectricity resistance.Because this is an intermediate state with reference to the magnetoelectricity resistance, its magnetization vector 186 is vertical with magnetization vector 184, and therefore (sense amplifier, comparison SA) can determine the data that storage unit 180 is deposited by an induction amplifier.
For the prior art of Fig. 6 and Fig. 5, be magnetization vector by the spin magnetization fixed bed, the magnetization vector of its magnetic field that applies disturbance simultaneously free layer, for example shown in Figure 7.The magnetization vector 186 ' of free layer has departed from a magnetic easy axis (easy axis) direction of free layer, and this applies magnetic field may cause storing the data change state.Therefore, above-mentioned prior art causes error in data easily.
Again, the U.S. the 6th, 545, the content of No. 906 patents proposes the free layer of individual layer is changed into three-decker, and rotates the magnetization vector of free layer with the operator scheme of shake-up pattern (toggle mode).Yet, because it is to utilize the direction of magnetization vector of free layer or antiparallel parallel each other with the direction of the magnetization vector of fixed bed as the data storing mode, it reads the complicated flow process of (Read before write) earlier before need writing, and need many group storage unit shared one group with reference to bit.The complicated flow process of reading earlier before this writes can cause operating speed slow at least, and shared reference bit can make the load of reference memory unit excessive, except also influencing the operating speed, and the shortcoming that also can damage easily or the like.
Therefore, fabricator or deviser etc. still endeavours to seek preferred magnetic memory cell, and the design of driving method.
Summary of the invention
The invention provides a kind of magnetic memory cell structure, allow lower write current at least, and the shirtsleeve operation program, to quicken operating speed.
The invention provides a kind of data access method, the direction of the magnetization vector of the magnetic free layer that can effectively reverse more can be by negative current pulse, to reduce the mistake that data write.
The invention provides a kind of magnetic memory circuit, can use aforesaid magnetic memory cell structure and data access method, also can use other storage unit that differ from selected storage unit as reference memory unit in addition, to lower the load that disperses reference memory unit.
The invention provides a kind of magnetic memory circuit, the new storage unit that for example also can adopt traditional storage unit or the present invention to propose, yet arrange the magnetization vector of operation reference memory unit, to replace the magnetization vector of the storage unit that direct control is selected, also can lower the load that disperses reference memory unit.
The present invention proposes a kind of magnetic memory cell structure, be applicable to a magnetic storage device, comprise that a magnetic is fixing laminated, some as a base layer structure, fixing laminated fixed bed and the fixed bed once of comprising on of this magnetic wherein, should go up fixed bed and have a magnetization vector, and this time fixed bed has another magnetization vector.Again, an enough big magnetic couplings power is arranged between fixed bed and this time fixed bed on this and also have a magnetic couplings wall, the magnetization vector (magnetization) of fixed bed on this is fixed maintains a reference direction.One tunnel barrier layer be positioned at this magnetic fixing laminated on.One magnetic freedom is laminated, is positioned on this tunnel barrier layer.Wherein this magnetic is free laminatedly comprises that free layer has magnetization vector, and free layer has magnetization vector on one, this time free layer with should between the free layer with another magnetic couplings wall isolation.When not applying under the magnetic manipulation field, this time magnetization vector is mutual antiparallel with going up magnetization vector, but is perpendicular to this reference direction of fixed bed on this.
According to one embodiment of the invention, in aforementioned magnetic memory cell structure, more comprise a magnetic biasing structural sheet, be positioned at magnetic free laminated on.The magnetic biasing structural sheet is to the free laminated generation one bias voltage magnetization vector of magnetic, and a magnetic field zero on past this bivector plane, write operation zone on the magnetic manipulation field direction that makes character electric current line and the formed bivector of the magnetic manipulation field direction plane of bit electric current line moves.The bias voltage magnetization vector should be gone up the parallel or antiparallel of magnetization vector with last free layer.
According to one embodiment of the invention, in aforementioned magnetic memory cell structure, the magnetic biasing structural sheet is that a magnetic individual layer or a magnetic are laminated.Magnetic is laminated to be comprised a non-magnetic metal layer, at least more than one ferromagnetic metal layer and an antiferromagnetism metal level and coincides and form.
According to one embodiment of the invention, in aforementioned magnetic memory cell structure, free laminated last free layer of magnetic and following free layer are ferromagnetic metal materials and by a magnetic couplings spacer layer separates.
The present invention proposes a kind of data access method again, comprises data access read method and data access wiring method, is applicable to the magnetic memory cell structure in the magnetic memory device.The magnetic memory device structure is aforesaid magnetic memory cell structure, and above-mentioned magnetic memory device also comprises a character electric current line and a bit electric current line.Be 0 degree wherein with the free one easy laminated direction of magnetic.A general positive current that for example, flows through this character electric current line can be created in+magnetic field of 45 degree directions, and a positive current that flows through this bit electric current line can be created in the magnetic field of-45 degree directions.The data access read method comprises that reading the phase one, one reads subordinate phase and and read the phase III.Reading the phase one is included in magnetic manipulation field direction that this character electric current line produced and applies one first magnetic manipulation field and give this magnetic memory cell, the magnetic manipulation field direction that this first magnetic manipulation field preference is produced at these these character electric current lines with these easy axis direction folder 45 degree, 135 degree, 225 degree or 315 degree in this way;
The magnetic manipulation field direction that is produced at this bit electric current line applies one second magnetic manipulation field and gives this magnetic memory cell, and wherein the magnetic manipulation field direction and this character electric current line that are produced of this bit electric current line of this second magnetic manipulation field produces
The angle of magnetic manipulation field direction be 90 degree, make a total magnetic field direction in fact at this easily on the axle.Wherein, the effect of the magnetic manipulation field direction that produced of the magnetic manipulation field direction that produced of this character electric current line and this bit electric current line can change the direction of free laminated this time magnetization vector of this magnetic, make with should on the direction of this magnetization vector of fixed bed tend to parallel or antiparallel.Cause free laminated this time free layer of this magnetic the different of magneto-resistor to read with the fixing laminated angle difference of magnetization vector to each other of this magnetic again.Magneto-resistor and one can be learnt a stored binary bit at present with reference to magnetoresistance ratio (mr) after.Again, reading subordinate phase comprises and closes this second magnetic manipulation field.Reading the phase III is to close this first magnetic manipulation field.
According to one embodiment of the invention, in aforesaid data access read method, read in the phase one at this, more be included in and apply before this second magnetic manipulation field, and contain lid and apply a period of time before this first magnetic manipulation field, apply relatively this second magnetic manipulation field and be reciprocal one negative direction magnetic field in advance.
According to one embodiment of the invention, in aforesaid data access read method, read subordinate phase and this read in the phase III at this, more comprise after closing this second magnetic manipulation field, and contain lid and close a period of time after this first magnetic manipulation field, apply relatively this second magnetic manipulation field and be reciprocal another negative direction magnetic field subsequently.
According to one embodiment of the invention,, comprise that more one writes the phase one, one and writes subordinate phase, and one writes the phase III in aforesaid data access wiring method.
Writing the phase one, is to carry out and read identical step of phase one.If it is identical that the binary bit of reading in advance and desires to write data, then read and finish after subordinate phase and this read the phase III, otherwise carry out with the next stage in carrying out this.In writing subordinate phase, different if this binary bit and desires to write data, then close this first magnetic manipulation field earlier.In writing the phase III, close this second magnetic manipulation field.
According to one embodiment of the invention, in aforesaid data access wiring method, writing in the phase one, more be included in and apply before second magnetic manipulation field, and contain lid and apply a period of time before first magnetic manipulation field, apply relative second magnetic manipulation field and be reciprocal one negative direction magnetic field in advance.
According to one embodiment of the invention, in aforesaid data access wiring method, writing subordinate phase and writing in the phase III, more be included in and close after first magnetic manipulation field, and contain lid and close a period of time after second magnetic manipulation field, apply relative first magnetic manipulation field and be reciprocal another negative direction magnetic field subsequently.
According to one embodiment of the invention,, after writing the phase III, be rotated 180 degree in the free laminated magnetization vector of magnetic in aforesaid data access wiring method.
The present invention proposes a kind of magnetic memory circuit again, carries out accessing operation with a pair of morphotype formula, comprises a plurality of structures of magnetic memory cell as the aforementioned, contains the two-dimensional array of a plurality of memory rows and a plurality of storage lines with formation.Many corresponding respectively those storage line configurations of bit electric current line.Many corresponding respectively those memory row configurations of character electric current line.Many are read circuitry lines, can read a magnetoelectricity resistance of each those memory cell structure respectively.The one drive circuit unit is in order to controlling those character electric current lines, those bit electric current lines and those read circuitry lines, this selected memory cell structure being applied the needed a plurality of magnetic manipulation field of access, and reads a magnetoelectricity resistance.Wherein, with the one of those memory cell structures of being not applied to magnetic field as a reference memory unit, and read this reference memory unit one with reference to the magnetoelectricity resistance.One comparator circuit unit receives this magnetoelectricity resistance and this compares with reference to the magnetoelectricity resistance, with a binary bit that determines that this selected memory cell structure is stored.
According to one embodiment of the invention, in aforesaid magnetic memory circuit, wherein outside one side of a plurality of memory rows, reference memory unit row are set more, to allow a memory row, can make comparisons with these reference memory unit row and read at the edge on this limit.
According to one embodiment of the invention, in aforesaid magnetic memory circuit, wherein in a write operation, if it is identical then keep this binary bit that this binary bit and that this comparator circuit unit is read desires to write data, to desire to write data different then by this drive circuit unit if this binary bit is with this, with the direction counter-rotating of the free laminated magnetization vector of a magnetic of this selected memory cell structure.
State with other purposes, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 illustrates the basic structure of a magnetic memory cell;
Fig. 2 illustrates the memory mechanism of magnetic storage;
Fig. 3 illustrates the magnetic resistance (R) of magnetic memory cell and the relation of magnetic field H size;
Fig. 4 illustrates the array structure of conventional memory cell;
Fig. 5 illustrates the another kind design of traditional magnetic storage unit;
Fig. 6 illustrates the magnetic memory circuit of being made up of the magnetic memory cell of Fig. 5;
Fig. 7 illustrates the magnetization vector by the spin magnetization fixed bed, the magnetization vector of its magnetic field that applies meeting disturbance free layer;
Fig. 8 illustrates the magnetic memory cell structure according to the embodiment of the invention, diagrammatic cross-section;
Fig. 9 illustrates the pivoting mechanism of shake-up pattern of the present invention;
Figure 10 A illustrates the pivoting mechanism of read operation;
Figure 10 B illustrates according to one embodiment of the invention, the memory mechanism of magnetic memory cell;
Figure 11 illustrates the flow process that writes according to magnetic memory cell of the present invention;
After Figure 12 A illustrates and studies consideration according to the present invention, propose may the write operation failure situation;
Figure 12 B illustrates according to the present invention, and another kind writes waveform;
Figure 13 illustrates the operation that adds the negative direction magnetic field pulse;
Figure 14 illustrates the storage unit knot according to another embodiment of the present invention;
Figure 15 illustrates according to another embodiment of the present invention, the magnetic memory circuit synoptic diagram;
Figure 16 illustrates according to another embodiment of the present invention, the magnetic memory circuit synoptic diagram;
Figure 17 illustrates according to another embodiment of the present invention, the magnetic memory circuit synoptic diagram;
Figure 18 illustrates according to the present invention, and another kind reads the type of drive of mechanism;
The main element symbol description:
100,102: electric current line 104: magnetic memory cell
104a: magnetic fixed bed 104b: tunnel barrier layer
104c: magnetic free layer 107,108a, 108b: magnetic is apart from direction
106,108: electrode 140,142: magnetic memory cell
144: operating area 160: following fixed bed
162: magnetic couplings wall 164: go up fixed bed
166: tunnel barrier layer 168: the magnetic free layer
170: electrode layer 172: magnetization vector
174: magnetization vector 176: magnetization vector
180,182: storage unit 184～188: magnetization vector
186,186 ': magnetization vector 190: magnetic memory cell
192: following fixed bed 194,202: magnetic couplings wall
198: tunnel barrier layer 196: go up fixed bed
200: following free layer 204: go up free layer
206,208,212,214: magnetization vector 210: magnetic is fixing laminated
216: magnetic free laminated 218: time for reading line
220,222: angle 224,226,228,242: magnetization vector
240: magnetic biasing structural sheet 244: the write operation zone
302: bit line driver element 304: character line driver element
306: multiplexer 310～316: storage unit
318: read circuitry lines 500～506: storage unit
S100, S110: step
Embodiment
The present invention proposes the magnetic memory cell structure, allows lower write current at least, to quicken operating speed.Again, the present invention also proposes data access method according to the magnetic memory cell structure, and the direction of the magnetization vector of the magnetic free layer that can effectively reverse more can be by negative current pulse, to reduce the mistake that data write.The present invention also proposes a kind of magnetic memory circuit again, can use above-mentioned magnetic memory cell structure and data access method, and can disperse the load of reference memory unit.Below for some embodiment as explanation, but the present invention is not subject to illustrated embodiment.
Fig. 8 illustrates the magnetic memory cell structure according to the embodiment of the invention, diagrammatic cross-section.In Fig. 8, magnetic memory cell structure 190 is only drawn structure a part of related to the present invention, to cooperate the structure of Fig. 1.Foundation structure for magnetic memory cell structure 190 only illustrates a magnetic fixing laminated 210.Magnetic fixing laminated 210 comprises fixed bed 192, and a magnetization vector 208 is arranged.Fixed bed 196 on other one, and a magnetization vector 206 is arranged.There is being a magnetic couplings wall 194 to isolate between fixed bed 192 and the last fixed bed 196 down.Following fixed bed 192 has enough strong magnetic couplings intensity with the magnetization vector 208,206 of last fixed bed 196, so the direction of magnetization vector can not changed by the external magnetic place.Form the manufacturing process of magnetic memory cell structure 190, and the material of selecting for use, should be those skilled in the art can understand, and will not continue to describe in detail.
Again, a magnetic free laminated 216 is positioned at the top of magnetic fixing laminated 210, isolates by tunnel barrier layer 198.The free layer once 200 that magnetic free laminated 216 comprises magnetic and magnetic one on free layer 204.Following free layer 200 has magnetization vector 212 and magnetization vector 214 respectively with last free layer 204, and isolates with magnetic couplings wall 202.This magnetization vector 212 and magnetization vector 214 be antiparallel each other, but is perpendicular to the magnetization vector 206,208 of magnetic fixing laminated 210.Here the direction of magnetization vector, at general state and do not have under the external magnetic field be with magnetic material one easily axle (easy axis) direction is consistent.In other words, under the state of nature of no external magnetic field, the direction of magnetization of magnetic fixing laminated 210 is vertical with the direction of magnetization of magnetic free laminated 216.Therefore, magnetization vector 212 is the attitudes that mediate with the magnetoelectricity resistance of magnetization vector 206, promptly be mat between the magnetoelectricity resistance of parallel state and antiparallel attitude, can be as one with reference to the magneto-resistor state of value.
The read operation of magnetic free laminated 216 for example is to depend on that the direction of magnetization vector 212 is towards the left side or towards the right.Apply suitable auxiliary magnetic field when reading of data, for example the magnetization vector 212 with magnetic free laminated 216 horizontally rotates 90 degree.Show (not shown) with top view, for example with counter rotation 90 degree, then magnetization vector 212 can be parallel with magnetization vector 206.But, if magnetization vector 212 is former before this towards right, behind counter rotation 90 degree, meeting and magnetization vector 206 antiparallels.Therefore, just can judge free laminated 216 data of being deposited of magnetic.Again, because under state of nature, the direction of magnetization of magnetic fixing laminated 210 is vertical with the direction of magnetization of magnetic freedom laminated 216, so any other storage unit that does not apply magnetic field is the attitude that mediates, and can be selected usefulness as a reference.
Below how description is rotated in the direction of last free layer 204 with the magnetization vector 214,212 of following free layer 200 of magnetic free laminated 216.It generally is the rotation mode that adopts shake-up pattern (toggle mode).Fig. 9 illustrates the pivoting mechanism of shake-up pattern of the present invention.Consult Fig. 9, following field waveform is to produce by the character electric current line of correspondence and bit electric current line.Basically can be divided into five time section t0～t4.Magnetic field H word (the H that character electric current line is produced
W), according to graphic mode, for example be up shown in the arrow.Defining easy axis direction in addition is zero degree, then H
WDirection be+45 the degree directions.The magnetic field H that bit electric current line is produced
BL(H
B) be in-45 degree directions, for example be towards the right side shown in the arrow.At interval t0, do not apply the external magnetic field.Therefore, two magnetization vectors of magnetic free laminated 216 can be on easy axle, and for example with the thick arrow representative magnetization vector of free layer down, its direction is 0 degree, and the magnetization vector of free layer is gone up in thin arrow representative, and its direction is 180 degree.
At interval t1, apply H
WMagnetic field.This moment is because two magnetization vectors of magnetic free laminated 216 and H
WReach balance, two magnetization vectors have a subtended angle, and with the externally-applied magnetic field direction be an angle of 90 degrees haply.At interval t2, then apply magnetic field H
B, itself and magnetic field H
WAddition produces a magnetic field of about 0 degree of resultant vector.So two magnetization vectors are turned clockwise again.In interval t3, magnetic field H
WBe closed, and only remaining magnetic field H
BThe magnetic direction that add this moment promptly is the direction towards the right side at-45 degree.At this moment, two magnetization vectors are rotated once again.
Be noted that at this interval t3 the magnetization vector of thin arrow is near easy axle 0 degree, on the contrary approaching easily axle 180 degree of the magnetization vector of thick arrow.In interval t4, then close magnetic field H
B, promptly be state of nature this moment.Owing to there is not externally-applied magnetic field, two magnetization vectors can be got back on the immediate easy axle, and the magnetization vector of therefore thin arrow is at 0 degree, and the magnetization vector of thick arrow is at 180 degree.Come comparison with the state of interval t0, the state of interval t4 has been rotated 180 degree, promptly is counter-rotating.The mode of Fig. 9 is exactly according to the mode of operation of touching pattern.
Again, be noted that except the magnetic field pulse of Fig. 9 also can have different modes to reach the two-stage and revolve the mode of operation that turn 90 degrees.For example, can be with magnetic field H
BWith magnetic field H
WPulse waveform exchange, then rotation is to yearn for+45 degree direction inhours from-45 degree to revolve and turn 90 degrees, and identical counter-rotating effect is also arranged.Again, if magnetic field H
BWith magnetic field H
WThe sequential of pulse waveform the same, but adopt the negative direction electric current and produce the negative direction pulse, consequently yearn for 135 degree direction dextrorotations to turn 90 degrees from 245 degree, identical counter-rotating effect is also arranged.When the direction of the magnetization vector 212,214 of magnetic free laminated 216 is inverted, represent that then stored binary bit (binary data) is changed in the storage unit, for example " 0 " is changed becomes " 1 ".If be inverted once, then the binary bit of Chu Cuning is got back to raw data " 0 " from " 1 " again again.
If read the stored data of magnetic free laminated 216, it can be according to the direction that sets, and the mechanism of similar Fig. 9 is done rotation, reads the magnetoelectricity resistance of magnetic free laminated 216 and magnetic fixing laminated 210, relatively can learn with reference to the magnetoelectricity resistance with one.Yet the operation of reading does not wish to change the direction of the magnetization vector of magnetic free laminated 216, therefore must magnetization vector be returned to former direction according to anti-order, so have different in rear half stage with Fig. 9.Figure 10 A illustrates the pivoting mechanism of read operation.In Figure 10 A, the picture left above is to be the sequential chart of example with the positive flux field pulse.The time section that 218 representatives of time for reading line are read promptly is the interval t2 of Fig. 9.Yet,, therefore need close magnetic field H earlier because read operation can not change the direction of the magnetization vector of magnetic free laminated 216
B, then close magnetic field H
WSo, magnetization vector can be got back to initial direction.Again, lower-left figure is the improvement field waveform of corresponding the picture left above, for example magnetic field H
BCan apply a negative direction magnetic field in advance, so can effectively reduce the mistake that sense data causes data to stir, its mechanism can be in the back more detailed description.
And for example the situation of Fig. 9 is the same, the magnetic field H shown in Figure 10 A
BWith magnetic field H
WWaveform and sequential relationship, be not unique selection.Except magnetic field H
BWith magnetic field H
WThe waveform intermodulation change outside, also can use the magnetic field H of negative direction
BWith magnetic field H
WWaveform, as the mode of top right plot and bottom-right graph.These variations all can have identical effect.
In other words, the initial direction in magnetic field can be at 45 degree, 135 degree, 225 degree, 315 degree (promptly being-45 degree), and revolving any rotation mode that turn 90 degrees with the direction that strides across easy axle then all has its rotate effect.
Figure 10 B illustrates according to one embodiment of the invention, the memory mechanism of magnetic memory cell.In Figure 10 B, Zuo Tu represents a binary bit, for example is " 1 ", and right figure represents another binary bit, for example is " 0 ".The last free layer 204 that the magnetic freedom is laminated and the magnetization vector of following free layer 200 are antiparallel state under physical environment as shown by arrows.For the data of " 1 ", for example the following magnetization vector of free layer 200 be towards left to.The magnetization vector 197 of the fixing laminated last fixed bed 196 of magnetic this moment is vertical with the magnetization vector of following free layer 200.The direction of the magnetization vector of last fixed bed 196 is fixing not affected by magnetic fields.Through the rotation of Figure 10 A, the magnetization vector of last free layer 204 is rotated an angle 220, becomes magnetization vector 224.Simultaneously, the magnetization vector of free layer 200 is rotated an angle 222 down, becomes magnetization vector 226.Again, for reference memory unit, do not apply the magnetic manipulation field as Figure 10 A, magnetization vector 228 of free layer 200 is still kept and magnetization vector 197 vertical (towards the right side or towards a left side) under it.For the selected storage unit that reads, its magnetization vector 226 opens near 180 degree with magnetization vector 197.Therefore, read its magnetoelectricity resistance, meeting is greater than the magnetoelectricity resistance of the intermediate state of reference memory unit.
Otherwise, for the data of " 0 ", open near 0 degree through postrotational magnetization vector 226 and magnetization vector 197.Therefore, read its magnetoelectricity resistance, meeting is less than the magnetoelectricity resistance of the intermediate state of reference memory unit.So can distinguish the data of " 0 " or " 1 ".
For the access mode of magnetic memory cell, with regard to the operation of reading and writing, the action of Fening forwardly is the same.With then can be different after reading the present data that obtain selected storage unit.Read operation need make magnetization vector get back to previous status.Write operation for example Figure 11 illustrates, and is the flow process that writes of magnetic memory cell.At step S100, decision will write binary bit a.In step S110, according to the leading portion operation of reading, reading present stored data is b, and wherein S100 and S110 can carry out or put upside down simultaneously.So, whether determine a=b.If a=b then finishes with the waveform of reading, its magnetization vector is not inverted.Otherwise if a ≠ b then finishes with the waveform of writing (for example Fig. 9), its magnetization vector is inverted.
Generally speaking, under state of nature, magnetization vector haply can be consistent with the easy axle of magnetic material.Yet, on making, also may some factors cause magnetization vector not on the easy axle of magnetic material.So can cause mistake in the process of data upset.After Figure 12 A illustrates and studies consideration according to the present invention, propose may the write operation failure situation.Consult Figure 12 A, waveform and Fig. 9 of its magnetic manipulation field are similar, but magnetization vector under state of nature, interval t0 is not on easy axle, for example departs from an angle.In interval t1, magnetic field H
WBe applied in, so magnetization vector is rotated by inhour.At interval t2, applied field H again
BWith magnetic field H
WAdduction.For example, magnetic field H
WWith magnetic field H
BApproximately equate, therefore produce the total magnetic field on easy axle, and be in 0 degree direction.This moment, magnetization vector was continued to be rotated.In interval t3, magnetic field H
WClose, and only remaining magnetic field H
BOn-45 degree directions, this moment, magnetization vector was continued to be rotated, but because the direction of postrotational magnetization vector and former magnetization vector is close.When interval t4 turned off the external magnetic field, then magnetization vector was got back to former direction, is not inverted.Therefore, cause write error.
Figure 12 B illustrates according to another kind of write operation of the present invention and produces the method in non-productive operation magnetic field, can solve the failure scenario of Figure 12 A.Consult Figure 12 B,, for example, just applying magnetic field H at interval t1 and interval t2 in order to solve the problem of this upset magnetization vector mistake
WFront and back a period of time, apply the magnetic field H of negative direction in advance
BAt interval t1, the magnetic field H B of negative direction 135 degree directions earlier applies, so that magnetization vector is changed in advance.Then according to previous rotation principle, the vector of rotary magnetization in regular turn is as the effect of interval t1～t4 among the 12A figure.At interval t4, magnetization vector is reversed haply.When interval t5 closed the external magnetic field, the state of its magnetization vector was successfully reversed.Therefore, the negative direction magnetic field pulse that applies in advance can effectively lower error in data.Again, the height of normal magnetic field pulse is represented with b in Figure 12 B, and the height that applies the negative direction magnetic field pulse is in advance represented with a.The height a of negative direction magnetic field pulse for example can equate with the height b of magnetic field pulse, again or a fixing height.
In addition, the back segment of operation also can add the negative direction magnetic field pulse.Figure 13 illustrates the operation that adds the negative direction magnetic field pulse.Consult Figure 13, the picture left above is the waveform that writes that does not add the negative direction magnetic field pulse.Top right plot is the waveform of reading that does not add the negative direction magnetic field pulse.Lower-left figure is the waveform that writes that adds the negative direction magnetic field pulse.Bottom-right graph is the waveform of reading that adds the negative direction magnetic field pulse.In the beginning of operation and front and back a period of time of concluding time point, can add the negative direction magnetic field pulse, so can reduce the mistake of reading or writing.
Again, touch the operation of pattern, the opereating specification of its permission is that the localized area is arranged, and according to the memory cell structure of Fig. 8, its operating current still has higher possibility.Therefore, framework is on the memory cell structure of Fig. 8, and the present invention proposes to increase a magnetic biasing layer in addition, to reduce operating current.Figure 14 illustrates the memory cell structure according to another embodiment of the present invention.Consult Figure 14, last figure is a memory cell structure, the memory cell structure of itself and Fig. 8 is similar, and different be on last free layer 204, to increase by a magnetic biasing structural sheet 240, be positioned on the magnetic free laminated 216, between this magnetic biasing structural sheet 240 and the last free layer 204, a magnetic couplings wall (not shown) can be arranged.Magnetic biasing structural sheet 240 has a magnetization vector 242, can produce a bias voltage magnetic field vector to magnetic free laminated 216.The effect of magnetization vector 242 is shown in figure below of Figure 14.Write operation zone 244, if the setting of nonmagnetic voltage biasing structure layer 240, could be shown in dashed region, away from magnetic field zero.But,, make write operation zone 244 move toward magnetic field zero because magnetic biasing structural sheet 240 produces the magnetic field bias voltage.Magnetic field H so, relatively
WWith magnetic field H
BRequired manipulation fields reduce, this element can be than power saving.
Again, the magnetization vector 242 of magnetic biasing structural sheet 240 can be parallel or antiparallel with the magnetization vector of last free layer 204.Magnetic biasing structural sheet 240 also can be that a magnetic individual layer or a magnetic are laminated.Magnetic is laminated for example can be comprised a non-magnetic metal layer, a ferromagnetic metal layer and an antiferromagnetism metal level and coincides and form.
Again for the magnetic memory circuit of integral body, as shown in figure 15.Figure 15 illustrates according to another embodiment of the present invention, the magnetic memory circuit synoptic diagram.Magnetic memory circuit for example comprises a plurality of aforesaid magnetic memory cell structures 310～316, contains the two-dimensional array of a plurality of memory rows and a plurality of storage lines with formation.With magnetic memory cell structure 310 is example, and for example double-head arrow 310a is two possibility directions representing the magnetization vector of free layer, and single arrow 310b is a direction of representing the magnetization vector of fixed bed.Under state of nature, the direction of the magnetization vector of free layer comes down to vertical with the direction of the magnetization vector of fixed bed.Many corresponding respectively many storage lines configurations of bit electric current line BLi, BLj again.Many corresponding respectively many memory rows configurations of character electric current line WWLi, WWLj.Many are read circuitry lines (again or be called line of induction sense line) 318, can read a magnetoelectricity resistance of each those memory cell structure respectively.The one drive circuit unit, it for example comprises bit line driver element 302 and character line driver element 304, control bit and character electric current line, these bits/character electric current line and these read circuitry lines, this selected memory cell structure being applied the needed a plurality of magnetic manipulation field of access, and read a magnetoelectricity resistance.
Wherein be noted that the present invention with the one of those memory cell structures of being not applied to magnetic field as a reference memory unit, and read this reference memory unit one with reference to the magnetoelectricity resistance.When for example storage unit 310 was selected, storage unit 310 impressions were as the non-productive operation waveform of Figure 10 A or Figure 13 bottom-right graph, and storage unit 312 is not experienced magnetic field, can be as reference memory unit.Because it is storage unit of the present invention all is the intermediate state that is in the magnetoelectricity resistance under state of nature, therefore all desirable as reference memory unit.And drive for convenience, the storage unit that can for example fix its diagonal angle of selection is as reference memory unit.When by reading the magnetoelectricity resistance that circuitry lines 318 obtains storage unit, for example via multiplexer 306 (multiplexer, MUX) selection, with the magnetoelectricity resistance of selected storage unit and the magnetoelectricity resistance output of reference memory unit, by an induction amplifier (sense amplifier, SA) detect, obtain the binary bit logical data of storage unit.If write operation, this binary bit after judging, reverse magnetization vector if desired, drive circuit unit 304 and 302 can finish with the waveform that writes.The details of its circuit should have different designs according to mentioned above principle, does not describe in detail in this.
Because storage unit of the present invention all is the intermediate state that is in the magnetoelectricity resistance under state of nature, so reference memory unit needn't fix sharedly, can disperse the load of reference memory unit.
Figure 16 illustrates according to another embodiment of the present invention, the magnetic memory circuit synoptic diagram.In Figure 16, magnetic memory circuit comprises the circuit that some are basic, by bit electric current line BL0, BL1... etc. and character electric current line WWL0, WWL1... etc., can be to selecting to want the storage unit of access, to apply magnetic manipulation field, by signal wire SL0, SL1... etc., the magnetoelectricity resistance of selected storage unit and reference memory unit is read in addition, at last by the stored binary bit of induction amplifier SA decision.Actual circuit can have different variations, and should be those skilled in the art and can understand.
Here will note to such an extent that be, because storage unit of the present invention all is the intermediate state that is in the magnetoelectricity resistance under state of nature, so reference memory unit needn't fix sharedly, can disperse the load of reference memory unit.For example, diagonal angle adjacent memory unit 310 can be relative to reference memory unit with storage unit 312.Will be when storage unit 310 by access, then storage unit 312 is as reference memory unit.Otherwise, will be when storage unit 312 by access, then storage unit 310 is as reference memory unit.And for example thick double-head arrow is represented the possible preferred compositions of two diagonal angle adjacent memory unit 310,312.In other words, Figure 16 is one of preferred arrangement example, is a group with four storage unit.
Figure 17 illustrates according to another embodiment of the present invention, the magnetic memory circuit synoptic diagram.In Figure 17, it is still identical with Figure 16 that it drives principle, yet the identical direction of selection can be for example fixed in the selection of reference memory unit.For example 408 of storage unit relative reference storage unit is fixing can select storage unit 414.Also can for example be that 412 relative reference storage unit of storage unit is fixing can select storage unit 418 in addition.For for the storage unit of the column of memory cells (row) 410 at edge, can set up the periphery that reference memory unit row (not being shown in Figure 17) are positioned at memory cell array again.So, in the arrangement of circuit, can be only one read character line 402 or 404 by each storage unit.Control signal wire 402 can be used for controlling the Push And Release that reads electric crystal.Needed in addition non-productive operation magnetic field can be provided by electric current line 406 and electric current line 416.The data of reading can be read by bit signal wire BL0, BL1... etc., by induction amplifier SA decision binary bit.In the arrangement of this embodiment, adjacent two bit signal wire BL0 and BL1 are arranged to one group.
The design of circuit can be done variation according to actual demand.And it is to be noted selection mode with reference memory unit here.Because the difference of the selection mode of reference memory unit has the variation of corresponding driving circuit.These variations should be those skilled in the art can be understood, and does not continue to describe in detail.
For general traditional memory cell structure, under state of nature, the magnetization vector of its free layer is parallel or antiparallel with the fixed bed magnetization vector.Therefore, traditional mode is that shared reference memory unit must be set in addition, and therefore, the load of traditional reference memory unit is very big, causes the problem of damage easily.
According to the arrangement of reference memory unit of the present invention,, can freely select reference memory unit under state of nature because the memory cell structure that the present invention proposes all is the intermediate state that is in the magnetoelectricity resistance.In other words, storage unit itself also can be used as reference memory unit.The load that so can disperse reference memory unit.
Again, if choose the principle of reference memory unit according to the present invention, at the conventional memory cell structure, the present invention also proposes the mode that solves.Figure 18 illustrates according to the present invention, and another kind reads the type of drive of mechanism.In Figure 18,, for example also can choose the storage unit of adjacent diagonal or other storage unit that belongs to state of nature as reference memory unit for the selection mode of reference memory unit.Yet the mode of driving just must be carried out in passive (passive) mode.In Figure 18, for example represent two possibility directions of the magnetization vector of free layer, and single arrow 510 is directions of representing the magnetization vector of fixed bed with double-head arrow 508.For the conventional memory cell structure, the magnetization vector 508 of the free layer under state of nature is parallel or antiparallel with the magnetization vector 510 of fixed bed.According to the present invention, for example under the arrangement of reference memory unit each other of storage unit 500 and storage unit 506, when wanting the data of reading cells 500, the magnetization vector 508 of the free layer of reference memory unit 506 can be revolved and turn 90 degrees, become the state shown in the lower right corner, it is the intermediateness of magnetoelectricity resistance.Therefore, storage unit 500 still can obtain storage unit 500 binary bit after comparing with reference memory unit 506.Therefore, reading under the mode passive, is the magnetization vector that rotates the free layer of reference memory unit 506, rather than the magnetization vector of the free layer of the selected storage unit 500 of active rotation.A pair of storage unit 502,504 at other direction also can read according to same way as.Just apply the waveform that writes when changing the data of storage unit if desired, change the binary bit of storage unit.
The memory cell structure that the present invention proposes is the intermediate state that is in the magnetoelectricity resistance under state of nature, can freely select reference memory unit, and another embodiment under the non-productive operation waveform, can be in the intermediate state of magnetoelectricity resistance.In other words, storage unit itself also can be used as reference memory unit.The load that so can disperse reference memory unit.
The present invention proposes to adopt passive type of drive again, also can freely select reference memory unit, and the magnetization vector of the free layer of rotary reference storage unit is to obtain with reference to the magnetoelectricity resistance, compare in order to magnetoelectricity resistance, after relatively, obtain binary bit with the memory cell structure that is selected.
The present invention also proposes to adopt the negative direction magnetic field pulse, to promote the correctness of data access.Give free layer by applying the magnetic biasing field again, can reduce operating current.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the invention; when can doing a little change and retouching, so the present invention's protection domain attached claim person of defining after looking is as the criterion.
Claims (24)
1. magnetic memory cell structure comprises:
One magnetic is fixing laminated, comprise on one fixed bed and fixed bed once, the above-mentioned fixed bed of going up has a magnetization vector, and above-mentioned fixed bed down has another magnetization vector, and the above-mentioned fixed bed of going up has enough big magnetic couplings power and a magnetic couplings wall in addition down with above-mentioned between the fixed bed, the above-mentioned upward described magnetization vector of fixed bed is fixed maintains a reference direction;
One tunnel barrier layer, be positioned at above-mentioned magnetic fixing laminated on; And
One magnetic freedom is laminated, be positioned on the above-mentioned tunnel barrier layer, wherein above-mentioned magnetic freedom is laminated to comprise that free layer has magnetization vector, and free layer has magnetization vector on one, and above-mentioned free layer down and above-mentioned going up between the free layer are isolated with another magnetic couplings wall;
Wherein do not applying under the magnetic manipulation field, above-mentioned magnetization vector down and above-mentioned upward magnetization vector are mutual antiparallel, but are perpendicular to the above-mentioned above-mentioned reference direction that goes up fixed bed.
2. magnetic memory cell structure according to claim 1, also comprise a magnetic biasing structural sheet, be positioned at above-mentioned magnetic free laminated on, wherein above-mentioned magnetic biasing structural sheet is to the free laminated generation one bias voltage magnetic field vector of above-mentioned magnetic, and a magnetic field zero on the past above-mentioned bivector plane, write operation zone on the magnetic manipulation field direction that makes character electric current line and the formed bivector of the magnetic manipulation field direction plane of bit electric current line moves.
3. as the magnetic memory cell structure as described in the claim 2, wherein above-mentioned bias voltage magnetic field vector and the above-mentioned above-mentioned parallel or antiparallel of magnetization vector that goes up that goes up free layer.
4. as the magnetic memory cell structure as described in the claim 2, wherein above-mentioned magnetic biasing structural sheet is a magnetic individual layer.
5. as the magnetic memory cell structure as described in the claim 2, wherein above-mentioned magnetic biasing structural sheet is that a magnetic is laminated, the laminated ferromagnetic metal layer that comprises at least of above-mentioned magnetic.
6. magnetic memory cell structure according to claim 1, the free laminated above-mentioned free layer of going up of wherein above-mentioned magnetic comprises ferromagnetic metal material with above-mentioned following free layer.
7. data access method, be applicable to the magnetic memory cell structure in the magnetic memory device, wherein said magnetic memory cell structure is the described magnetic memory cell structure of claim 1, and above-mentioned magnetic memory device also comprises a character electric current line and a bit electric current line, be 0 degree with the free one easy laminated direction of above-mentioned magnetic wherein, above-mentioned data access method comprises:
One reads the phase one, comprising:
The magnetic manipulation field direction that is produced at above-mentioned character electric current line applies one first magnetic manipulation field to above-mentioned magnetic memory cell;
The magnetic manipulation field direction that is produced at above-mentioned bit electric current line applies one second magnetic manipulation field to above-mentioned magnetic memory cell, the magnetic manipulation field direction that magnetic manipulation field direction that wherein above-mentioned character electric current line is produced and above-mentioned bit electric current line are produced one of is closed the total magnetic field direction in fact on above-mentioned easy axle, the effect of the magnetic manipulation field direction that magnetic manipulation field direction that wherein above-mentioned character electric current line is produced and above-mentioned bit electric current line are produced can change the free laminated above-mentioned direction of magnetization vector down of above-mentioned magnetic, make and the above-mentioned parallel or antiparallel of direction trend that goes up the above-mentioned magnetization vector of fixed bed, read in the phase one above-mentioned, the angle of the magnetic manipulation field direction that magnetic manipulation field direction that above-mentioned character electric current line is produced and above-mentioned bit electric current line are produced is 90 degree, and with the angle of above-mentioned easy axis direction be 45 degree, 135 degree, 225 degree, or 315 the degree; And
Read free laminated above-mentioned free layer down of above-mentioned magnetic and the fixing laminated magnetoelectricity resistance of above-mentioned magnetic, above-mentioned magnetoelectricity resistance and can be learnt a present stored binary bit with reference to the magnetoelectricity resistance after relatively;
One reads subordinate phase, comprises closing above-mentioned second magnetic manipulation field; And
One reads the phase III, closes above-mentioned first magnetic manipulation field.
8. as the data access method as described in the claim 7, read in the phase one above-mentioned, also be included in and apply before above-mentioned second magnetic manipulation field, and contain lid and apply a period of time before above-mentioned first magnetic manipulation field, apply above-mentioned relatively second magnetic manipulation field and be reciprocal one negative direction magnetic field in advance.
9. as the data access method as described in the claim 8, read subordinate phase and above-mentioned reading in the phase III above-mentioned, also comprise after closing above-mentioned second magnetic manipulation field, and contain lid and close a period of time after above-mentioned first magnetic manipulation field, apply above-mentioned relatively second magnetic manipulation field and be reciprocal another negative direction magnetic field subsequently.
10. as the data access method as described in the claim 7, read subordinate phase and above-mentioned reading in the phase III above-mentioned, also comprise after closing above-mentioned second magnetic manipulation field, and contain lid and close a period of time after above-mentioned first magnetic manipulation field, apply above-mentioned relatively second magnetic manipulation field and be reciprocal one negative direction magnetic field subsequently.
11. the data access method as described in the claim 7 also comprises:
One writes the phase one, is to carry out to read identical step of phase one with above-mentioned, identical if wherein above-mentioned binary bit and desires to write data, then reads subordinate phase and above-mentionedly finishes after reading the phase III in execution is above-mentioned;
One writes subordinate phase, different if above-mentioned binary bit and desires to write data, then closes above-mentioned first magnetic manipulation field earlier; And
One writes the phase III, closes above-mentioned second magnetic manipulation field.
12. as the data access method as described in the claim 11, write in the phase one above-mentioned, also be included in and apply before above-mentioned second magnetic manipulation field, and contain lid and apply a period of time before above-mentioned first magnetic manipulation field, apply above-mentioned relatively second magnetic manipulation field and be reciprocal one negative direction magnetic field in advance.
13. as the data access method as described in the claim 12, write subordinate phase and above-mentioned writing in the phase III above-mentioned, also be included in and close after above-mentioned first magnetic manipulation field, and contain lid and close a period of time after above-mentioned second magnetic manipulation field, apply above-mentioned relatively first magnetic manipulation field and be reciprocal another negative direction magnetic field subsequently.
14. as the data access method as described in the claim 11, write subordinate phase and above-mentioned writing in the phase III above-mentioned, also be included in and close after above-mentioned first magnetic manipulation field, and contain lid and close a period of time after above-mentioned second magnetic manipulation field, apply above-mentioned relatively first magnetic manipulation field and be reciprocal one negative direction magnetic field subsequently.
15. as the data access method as described in the claim 11, above-mentioned write the phase III after, all be rotated 180 degree at the described magnetization vector of the free laminated upper and lower free layer of magnetic.
16. a magnetic memory circuit comprises:
A plurality of magnetic memory cell structures according to claim 1 contain the memory cell array of a plurality of memory rows and a plurality of storage lines with formation;
Many the corresponding respectively above-mentioned a plurality of storage line configurations of bit electric current line;
Many the corresponding respectively above-mentioned a plurality of memory row configurations of character electric current line;
Many are read circuitry lines, can read a magnetoelectricity resistance of each above-mentioned a plurality of memory cell structure respectively;
The one drive circuit unit, control above-mentioned a plurality of character electric current line, above-mentioned a plurality of bit electric current lines and above-mentioned a plurality of circuitry lines that reads, selected said memory cells structure is applied the needed a plurality of magnetic manipulation field of access, and read on the selected said memory cells structure and state the magnetoelectricity resistance, wherein with the one of above-mentioned a plurality of memory cell structures of being not applied to magnetic field as a reference memory unit, and read above-mentioned reference memory unit one with reference to the magnetoelectricity resistance; And
One comparator circuit unit receives above-mentioned magnetoelectricity resistance and above-mentionedly compares with reference to the magnetoelectricity resistance, with a binary bit that determines that selected said memory cells structure is stored.
17. as the magnetic memory circuit as described in the claim 16, wherein outside one side of above-mentioned a plurality of memory rows, one reference memory unit row also are set,, can make comparisons with above-mentioned reference memory unit row and read to allow a memory row at the edge on this limit.
18., be the relation of adjacent diagonal between wherein above-mentioned reference memory unit and the selected said memory cells structure as the magnetic memory circuit as described in the claim 16.
19. data access method as the magnetic memory circuit as described in the claim 16, be 0 degree wherein with the free laminated easy axis direction of above-mentioned magnetic, a positive dirction electric current that flows through above-mentioned a plurality of character electric current lines respectively can be created in+magnetic field of 45 degree directions, a positive dirction electric current that flows through above-mentioned a plurality of bit electric current lines respectively can be created in the magnetic field of-45 degree directions, when wherein selected said memory cells structure is carried out a data access in will be to magnetic memory circuit, comprising:
One reads the phase one, comprising:
Apply one first magnetic manipulation field to above-mentioned magnetic memory cell, above-mentioned first magnetic manipulation field is to press from both sides 45 degree, 135 degree, 225 degree or 315 first directions of spending with above-mentioned easy axis direction;
Apply one second magnetic manipulation field and give above-mentioned magnetic memory cell, a second direction of wherein above-mentioned second magnetic manipulation field and the angle of above-mentioned first direction are 90 degree, make a total magnetic field direction in fact on above-mentioned easy axle; And
Read free laminated above-mentioned free layer down of above-mentioned magnetic and the fixing laminated magnetoelectricity resistance of above-mentioned magnetic, above-mentioned magnetoelectricity resistance and can be learnt a present stored binary bit with reference to the magnetoelectricity resistance after relatively;
One reads subordinate phase, comprises closing above-mentioned second magnetic manipulation field; And
One reads the phase III, closes above-mentioned first magnetic manipulation field.
20. as the data access method as described in the claim 19, wherein above-mentioned reading in the phase one, also be included in and apply before above-mentioned second magnetic manipulation field, and contain lid and apply a period of time before above-mentioned first magnetic manipulation field, apply above-mentioned relatively second magnetic manipulation field and be reciprocal one negative direction magnetic field in advance.
21. as the data access method as described in the claim 19, read subordinate phase and above-mentioned reading in the phase III above-mentioned, also comprise after closing above-mentioned second magnetic manipulation field, and contain lid and close a period of time after above-mentioned first magnetic manipulation field, apply above-mentioned relatively second magnetic manipulation field and be reciprocal one negative direction magnetic field subsequently.
22. the data access method as described in the claim 19 also comprises:
One writes the phase one, is to carry out to read identical step of phase one with above-mentioned, identical if wherein above-mentioned binary bit and desires to write data, then reads subordinate phase and above-mentionedly finishes after reading the phase III in execution is above-mentioned;
One writes subordinate phase, different if above-mentioned binary bit and desires to write data, then closes above-mentioned first magnetic manipulation field earlier; And
One writes the phase III, closes above-mentioned second magnetic manipulation field.
23. as the data access method as described in the claim 22, write in the phase one above-mentioned, also be included in and apply before above-mentioned second magnetic manipulation field, and contain lid and apply a period of time before above-mentioned first magnetic manipulation field, apply above-mentioned relatively second magnetic manipulation field and be reciprocal one negative direction magnetic field in advance.
24. as the data access method as described in the claim 22, write subordinate phase and above-mentioned writing in the phase III above-mentioned, also be included in and close after above-mentioned first magnetic manipulation field, and contain lid and close a period of time after above-mentioned second magnetic manipulation field, apply above-mentioned relatively first magnetic manipulation field and be reciprocal one negative direction magnetic field subsequently.
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