CN100583317C - Low electric resistivity high B values negative temperature coefficient thermistor chip and manufacturing method therefor - Google Patents
Low electric resistivity high B values negative temperature coefficient thermistor chip and manufacturing method therefor Download PDFInfo
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- CN100583317C CN100583317C CN200710113776A CN200710113776A CN100583317C CN 100583317 C CN100583317 C CN 100583317C CN 200710113776 A CN200710113776 A CN 200710113776A CN 200710113776 A CN200710113776 A CN 200710113776A CN 100583317 C CN100583317 C CN 100583317C
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- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 238000002360 preparation method Methods 0.000 claims abstract description 32
- 229910018054 Ni-Cu Inorganic materials 0.000 claims abstract description 7
- 229910018481 Ni—Cu Inorganic materials 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 14
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 14
- 229940068984 polyvinyl alcohol Drugs 0.000 claims description 14
- 235000019422 polyvinyl alcohol Nutrition 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 13
- 238000000227 grinding Methods 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 7
- 229910020637 Co-Cu Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 238000001354 calcination Methods 0.000 claims description 4
- 235000019628 coolness Nutrition 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 238000001238 wet grinding Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- 229910002637 Pr6O11 Inorganic materials 0.000 abstract 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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Abstract
The present invention relates to a low-resistivity high B value negative temperature coefficient thermistor chip which is produced by means below. Mn-Ni-Cu series are added into two or three out of TiO2, Cr2O3, Nb2O5, WO3 and Pr6O11 to produce a low-resistivity mould sheet which then gets compressed and becomes thinner, and are calcined into a low-resistivity high B value thermistor chip under 1,080 to 1,120 DEG C for 2.5 to 3.0 hours. The calcined density is 4.9-5.1g/cm3, and the two sides of the thermistor chip are baked with silver and then cut into sizes required by the chip. The present invention also relates to a method for the preparation of the low-resistivity high B value negative temperature coefficient thermistor chip. The present invention has beneficial effect that the present invention has super-low resistivity, high B value, simple production technique, low production cost and high production efficiency; and is suitable for mass-production.
Description
(1) technical field
The present invention relates to thermistor and method for making thereof, particularly a kind of low-resistivity/high B-value negative temperature coefficient thermistor chip and manufacture method thereof.
(2) background technology
Negative tempperature coefficient thermistor normally from transition metal Mn, Fe, Co, Ni, Cu, oxide choose the 3-4 kind as main formula, mix some high prices or at a low price other metallization oxide and some rare earth elements simultaneously.The resistivity of material is from several ohmcms, to the hundreds of ohmcm, and B value (material coefficient) is in the 1000-5000K scope.The normal resistance of the thermistor made from these materials for hundreds of ohm to hundreds of kilohm.
According to the thermistor characteristic, RT=Roe ∧ B/T, the relation of B value and resistivity is
B＝T[Lnρ+Ln(L/S)-LnRo]
T is the pairing temperature of B value in the formula, and Ro is the metallic resistance of material, and L and S be the electrode spacing and the conductive area of element respectively.Determining back B value when material system is the pass with the resistivity of material only.Be that the B value is proportional to Ln ρ, the material B value that resistivity is high is big.This shows that the NTCR material that relies on material prescription to obtain utmost point low-resistivity/high B value is impossible.
Prepare thermistor in order to make low resistance/high B value NTCR element, once to have developed, reduce the resistance of element with the thickness that reduces chip with semiconductor technology.But,,, then run into difficulty as will further reducing the resistance of element so the resistance of element can only drop to a certain degree because the minimum thickness of chip is restricted (I to 150 μ m).Continue after, developed chip NTCR (being similar to the MLC capacitance structure) again.Chip NTCR manufacturing cost high technology complexity, in becoming the porcelain process in the electrode infiltration cause decline of B value and resistance dispersion; The life of prolonging of termination electrode degenerates the consistency of element.Up to now, the method that does not also have a kind of desirable realization low-resistance/high B value NTCR element.
(3) summary of the invention
The present invention provides a kind of low-resistivity/high B-value negative temperature coefficient thermistor chip and manufacture method thereof that has overcome the weakness of monolithic and sandwich construction, still has very high B value in extremely low resistivity in order to remedy the deficiencies in the prior art.
The present invention is achieved through the following technical solutions:
Low-resistivity of the present invention/high B-value negative temperature coefficient thermistor chip, its special character is: make as follows:
(1) preparation of low-resistivity diaphragm: the low-resistivity diaphragm is that base oxide adds TiO with the oxide of Mn-Ni-Cu
2, Cr
2O
3, Nb
2O
5, WO
3, Pr
6O
11In the 2-3 kind oxide selected, mixed grinding is made powder, and adds the poly-vinyl alcohol solution of concentration 20-30% at powder, is made into slurry, pricks the diaphragm that film becomes desired thickness;
(2) preparation of high B value diaphragm: high B value diaphragm is that base oxide adds TiO with the oxide of Mn-Co-Cu
2, Nb
2O
5, NiO composition, mixed grinding is made powder, the poly-vinyl alcohol solution that adds concentration and be 20-30% in powder is made slurry, pricks film and becomes needed diaphragm;
(3) pressing: two-layer described low-resistivity diaphragm and middle described high B value diaphragm are built up compound film sheet, its compacting is thinned to the thickness that needs with hydraulic press then;
(4) sintering: with compound film sheet sintering in air, with 100 ℃ of/hour intensifications, under 1080 ℃ of-1120 ℃ of temperature calcination 2.5-3.0 hour, with stove cooling or 120 ℃ of/hour cooling coolings, burning till density was 4.9-5.1g/cm
3, silver electrode is gone up in the two sides roasting, is cut into the chip of required size at last.
The preparation method of low-resistivity of the present invention/high B-value negative temperature coefficient thermistor chip, its special character is: comprise the steps:
(1) preparation of low-resistivity diaphragm: the low-resistivity diaphragm is that base oxide adds TiO with the oxide of Mn-Ni-Cu
2, Cr
2O
3, Nb
2O
5, WO
3, Pr
6O
11In the 2-3 kind oxide selected, mixed grinding is made powder, and adds the poly-vinyl alcohol solution of concentration 20-30% at powder, is made into slurry, pricks the diaphragm that film becomes desired thickness;
(2) preparation of high B value diaphragm: high B value diaphragm is that base oxide adds TiO with the oxide of Mn-Co-Cu
2, Nb
2O
5, NiO composition, mixed grinding is made powder, the poly-vinyl alcohol solution that adds concentration and be 20-30% in powder is made slurry, pricks film and becomes needed diaphragm;
(3) pressing: two-layer described low-resistivity diaphragm and middle described high B value diaphragm are built up compound film sheet, its compacting is thinned to the thickness that needs with hydraulic press then;
(4) sintering: with compound film sheet sintering in air, with 100 ℃ of/hour intensifications, under 1080 ℃ of-1120 ℃ of temperature calcination 2.5-3.0 hour, with stove cooling or 120 ℃ of/hour cooling coolings, burning till density was 4.9-5.1g/cm
3, silver electrode is gone up in the two sides roasting, is cut into the chip of required size at last.
Negative tempperature coefficient thermistor chip production method of the present invention, in the preparation of step (1) low-resistivity diaphragm, the oxide of Mn-Ni-Cu is Mn
3O
4, MnO
2, Mn
2O
3, select among NiO and the CuO three kinds, oxide is Mn: Ni: Cu=2.0 in molar ratio: 2.0: 2.0.
Negative tempperature coefficient thermistor chip production method of the present invention is in the preparation of step (1) low-resistivity diaphragm, from TiO
2, Cr
2O
3, Nb
2O
5, WO
3, Pr
6O
11In the 2-3 kind selected be to add in the base oxide with the 1-3% of base oxide weight respectively.
Negative tempperature coefficient thermistor chip production method of the present invention, in the preparation of the high B value of step (2) diaphragm, the oxide of Mn-Co-Cu is Mn
3O
4, Mn
2O
3, MnO
2, Co
3O
4, Co
2O
3, select among the CuO three kinds, be Mn 2.0-2.6 part by the mole proportioning, Co 3.0-3.5 part, Cu 0.2-0.4 part.
Negative tempperature coefficient thermistor chip production method of the present invention, in the preparation of the high B value of step (2) diaphragm, TiO
2, Nb
2O
5, NiO the percentage by weight of composition be TiO2: Nb2O5: NiO=30%: 30%: 40%, composition added in the base oxide with the 0.5-2.0% of base oxide weight.
Negative tempperature coefficient thermistor chip production method of the present invention in step (3) pressing, is pressed into the composite sheet that gross thickness is 1.2-1.8mm or 0.3-0.8mm on hydraulic press.
Negative tempperature coefficient thermistor chip production method of the present invention, in step (1), the preparation process of low-resistivity diaphragm: the powder that will prepare is in proportion dried after 24 hours with the wet-milling of Zr ball, cross 320 mesh sieves, in material, add concentration then and be the polyvinyl alcohol water solution that 20-30% accounts for the 30-40% of material weight and make slurry, and pricking the thin slice that is bundled into 1-5mm on the film machine.
Negative tempperature coefficient thermistor chip production method of the present invention, in step (2), the preparation process of high B value diaphragm: the TiO that will prepare in proportion
2, Nb
2O
5, NiO composition, mixed grinding 750 ℃-850 ℃ insulations 3-5 hour, mixes composition with base oxide, powder is made in grinding, adding concentration is that the polyvinyl alcohol liquation of 20-30% is made slurry in powder, is bundled into the thin slice of 0.1-0.2mm at last.
The invention has the beneficial effects as follows, have extremely low resistivity and very high B value, be applicable to and make high-sensitivity miniature NTCR element and the low-resistance/high B value slice formula NTCR element that conventional method can't realize, be used to make miniature thermistor and slice heat sensitive resistor, these elements are mainly used in temperature survey, control and compensation.And preparation technology is simple, and low cost of manufacture, production efficiency height are fit to large-scale production.
(4) description of drawings
The present invention is further illustrated below in conjunction with accompanying drawing.
Fig. 1 is the schematic diagram of cross section of the present invention.
Among the figure, 1,2 is low-resistivity layer, and 3 is high B value layer.
(5) embodiment
Low-resistivity/low B value diaphragm material prescription
High B value/high resistivity diaphragm material prescription
By the prescription in the last table with the low-resistivity powder, with material: water: ball=1.0: (1.2-1.4): 1.5 weight ratio places the ball mill barreling 24 hours of Zr ball, take out the back 90 ℃ of oven dry, use mortar fine ground again, cross 320 mesh sieves, polyvinyl alcohol is made into 20% concentration, the polyvinyl alcohol water solution that in powder, adds part by weight 40%, fully stir and make slurry, place then on the press mold machine and stir, divide A, B, C, D4 group to carry out press mold.
Meanwhile, the high B value composition that will prepare in last table ratio prescription, dry after 24 hours with the wet-milling of Zr ball, again 750 ℃ of insulations 3 hours, grind again, cross 320 mesh sieves and make composition, composition is mixed with the base oxide prescription with 0.7% ratio, then according to the method processing for preparing the low-resistivity diaphragm.
Prick film thickness such as following table
It is superimposed with low resistance diaphragm and high B value diaphragm to press figure, and it is pressed into the compound film sheet that gross thickness is 0.3mm with hydraulic press, compound film sheet places vertical heater or pusher furnace sintering, raise 1080 ℃ of temperature insulations 2.5 hours with 100 ℃/speed at one hour rating, with the stove cooling, the silver slurry is gone up in the roasting of diaphragm two sides carried out electrode, compound film sheet is divided into the chip of 1 * 1 * 3 (mm3), measuring resistance calculated resistance rate and B25/50 value, result such as following table
| A | B | C | D | |
| Resistivity/Ω | 3-5 | 8-10 | 12-15 | 18-20 |
| B 25/ 50(K) | 3800-3900 | 3800-3900 | 3800-3900 | 3800-3900 |
The resistance value of the composite sheet chip after the hydraulic press pressing reduces 30-40% than routine.
Low-resistivity/low B value diaphragm material prescription
High B value/high resistivity diaphragm according to the form below ratio prescription:
The thickness of two kinds of diaphragms such as following table are:
Make the performance parameters (resistivity and B value) of chip at last, it is as shown in the table
| A | B | C | D | |
| Resistance/Ω | 1-2 | 3-5 | 4-6 | 5-8 |
| B 25/ 50(K) | 4000-4100 | 4000-4100 | 4000-4100 | 4000-4100 |
Change the prescription of low-resistivity diaphragm and the material prescription of high B value diaphragm simultaneously, preparing diaphragm technology is identical with embodiment 1.
The material prescription of low-resistivity/low B value diaphragm
High B value/high resistivity film slice prescription
The preparation method of two kinds of diaphragms is identical with embodiment 1, two kinds of diaphragm thickness such as following tables
Make the performance parameters (resistivity and B value) of chip at last, it is as shown in the table
| A | B | C | D | |
| Resistance/Ω | 10-12 | 15-18 | 20-25 | 25-30 |
| B 25/ 50(K) | 4000-4100 | 4000-4100 | 4000-4100 | 4000-4100 |
Resistivity that the NTCR chip tool for preparing with the inventive method is extremely low and very high B value (temperature sensitive coefficient) are applicable to and make high-sensitivity miniature NTCR element and the low-resistance/high B value slice formula NTCR element that conventional method can't realize.
Claims (9)
1. low-resistivity/high B-value negative temperature coefficient thermistor chip is characterized in that: make as follows:
(1) preparation of low-resistivity diaphragm: the low-resistivity diaphragm is that base oxide adds TiO with the oxide of Mn-Ni-Cu
2, Cr
2O
3, Nb
2O
5, WO
3, Pr
6O
11In the 2-3 kind oxide selected, mixed grinding is made powder, and adds the poly-vinyl alcohol solution of concentration 20-30% at powder, is made into slurry, pricks the diaphragm that film becomes desired thickness;
(2) preparation of high B value diaphragm: high B value diaphragm is that base oxide adds TiO with the oxide of Mn-Co-Cu
2, Nb
2O
5, NiO composition, mixed grinding is made powder, the poly-vinyl alcohol solution that adds concentration and be 20-30% in powder is made slurry, pricks film and becomes needed diaphragm;
(3) pressing: two-layer described low-resistivity diaphragm and middle described high B value diaphragm are built up compound film sheet, its compacting is thinned to the thickness that needs with hydraulic press then;
(4) sintering: with compound film sheet sintering in air, with 100 ℃ of/hour intensifications, under 1080 ℃ of-1120 ℃ of temperature calcination 2.5-3.0 hour, with stove cooling or 120 ℃ of/hour cooling coolings, burning till density was 4.9-5.1g/cm
3, silver electrode is gone up in the two sides roasting, is cut into the chip of required size at last.
2. the preparation method of the described low-resistivity of claim 1/high B-value negative temperature coefficient thermistor chip is characterized in that: comprise the steps:
(1) preparation of low-resistivity diaphragm: the low-resistivity diaphragm is that base oxide adds TiO with the oxide of Mn-Ni-Cu
2, Cr
2O
3, Nb
2O
5, WO
3, Pr
6O
11In the 2-3 kind oxide selected, mixed grinding is made powder, and adds the poly-vinyl alcohol solution of concentration 20-30% at powder, is made into slurry, pricks the diaphragm that film becomes desired thickness;
(2) preparation of high B value diaphragm: high B value diaphragm is that base oxide adds TiO with the oxide of Mn-Co-Cu
2, Nb
2O
5, NiO composition, mixed grinding is made powder, the poly-vinyl alcohol solution that adds concentration and be 20-30% in powder is made slurry, pricks film and becomes needed diaphragm;
(3) pressing: two-layer described low-resistivity diaphragm and middle described high B value diaphragm are built up compound film sheet, its compacting is thinned to the thickness that needs with hydraulic press then;
(4) sintering: with compound film sheet sintering in air, with 100 ℃ of/hour intensifications, under 1080 ℃ of-1120 ℃ of temperature calcination 2.5-3.0 hour, with stove cooling or 120 ℃ of/hour cooling coolings, burning till density was 4.9-5.1g/cm
3, silver electrode is gone up in the two sides roasting, is cut into the chip of required size at last.
3. the preparation method of low-resistivity according to claim 2/high B-value negative temperature coefficient thermistor chip is characterized in that: in the preparation of step (1) low-resistivity diaphragm, the oxide of Mn-Ni-Cu is Mn
3O
4, MnO
2, Mn
2O
3, select among NiO and the CuO three kinds, oxide is Mn: Ni: Cu=2.0 in molar ratio: 2.0: 2.0.
4. according to the preparation method of claim 2 or 3 described low-resistivity/high B-value negative temperature coefficient thermistor chips, it is characterized in that: in the preparation of step (1) low-resistivity diaphragm, from TiO
2, Cr
2O
3, Nb
2O
5, WO
3, Pr
6O
11In the 2-3 kind selected be to add in the base oxide with the 1-3% of base oxide weight respectively.
5. the preparation method of low-resistivity according to claim 2/high B-value negative temperature coefficient thermistor chip is characterized in that: in the preparation of the high B value of step (2) diaphragm, the oxide of Mn-Co-Cu is Mn
3O
4, Mn
2O
3, MnO
2, Co
3O
4, Co
2O
3, select among the CuO three kinds, be Mn 2.0-2.6 part by the mole proportioning, Co 3.0-3.5 part, Cu0.2-0.4 part.
6. according to the preparation method of claim 2 or 5 described low-resistivity/high B-value negative temperature coefficient thermistor chips, it is characterized in that: in the preparation of the high B value of step (2) diaphragm, TiO
2, Nb
2O
5, NiO the percentage by weight of composition be TiO
2: Nb
2O
5: NiO=30%: 30%: 40%, composition added in the base oxide with the 0.5-2.0% of base oxide weight.
7. the preparation method of low-resistivity according to claim 2/high B-value negative temperature coefficient thermistor chip is characterized in that: in step (3) pressing, be pressed into the composite sheet that gross thickness is 1.2-1.8mm or 0.3-0.8mm on hydraulic press.
8. according to the preparation method of claim 2 or 3 described low-resistivity/high B-value negative temperature coefficient thermistor chips, it is characterized in that: in step (1), the preparation process of low-resistivity diaphragm: the powder that will prepare is in proportion dried after 24 hours with the wet-milling of Zr ball, cross 320 mesh sieves, add concentration then and be the polyvinyl alcohol water solution that 20-30% accounts for the 30-40% of material weight and make slurry, and pricking the thin slice that is bundled into 1-5mm on the film machine.
9. according to the preparation method of claim 2 or 5 described low-resistivity/high B-value negative temperature coefficient thermistor chips, it is characterized in that: in step (2), the preparation process of high B value diaphragm: the TiO that will prepare in proportion
2, Nb
2O
5, NiO composition, mixed grinding 750 ℃-850 ℃ insulations 3-5 hour, mixes composition with base oxide, powder is made in grinding, adding concentration is that the polyvinyl alcohol liquation of 20-30% is made slurry in powder, is bundled into the thin slice of 0.1-0.2mm at last.
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| CN200710113776A CN100583317C (en) | 2007-09-12 | 2007-09-12 | Low electric resistivity high B values negative temperature coefficient thermistor chip and manufacturing method therefor |
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Cited By (1)
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|---|---|---|---|---|
| TWI839332B (en) * | 2017-05-22 | 2024-04-21 | 德商維雪電子公司 | Method of producing a ntcr sensor |
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| CN101492284B (en) * | 2009-01-04 | 2011-12-28 | 山东中厦电子科技有限公司 | B value changeable negative temperature coefficient thermistor composition and method of producing the same |
| CN101618959B (en) * | 2009-07-28 | 2012-05-23 | 四川西汉电子科技有限责任公司 | Thermal sensing material with low resistivity and high B-value negative temperature coefficient and preparation method thereof |
| CN102693794B (en) * | 2012-06-04 | 2015-02-04 | 句容市博远电子有限公司 | Ultralow-resistivity high-B value negative temperature coefficient (NTC) thermistor |
| CN104193306B (en) * | 2014-08-20 | 2015-12-30 | 华南理工大学 | A kind of low-resistivity high B-value negative temperature coefficient thermal sensitive ceramic material and preparation method thereof |
| CN104700970B (en) * | 2015-03-30 | 2017-12-22 | 东莞理工学院 | A kind of adjusting method of negative temperature coefficient thin-film thermistor and preparation method thereof and its resistance value |
| CN107117957A (en) * | 2017-05-10 | 2017-09-01 | 蚌埠市嘉实机电设备制造有限公司 | A kind of preparation method of NTC types thermistor ceramic material |
| CN108439982B (en) * | 2018-05-14 | 2021-06-15 | 济南大学 | Axial composite negative temperature coefficient thermal sensitive ceramic material and preparation method thereof |
| CN109293343B (en) * | 2018-08-24 | 2021-06-25 | 西南科技大学 | Negative temperature coefficient thermomagnetic composite sensitive resistance material and preparation method thereof |
| CN111386581A (en) * | 2018-10-31 | 2020-07-07 | 株式会社芝浦电子 | Thermistor sintered compact and temperature sensor element |
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| JP2000357603A (en) * | 1999-06-16 | 2000-12-26 | Mitsubishi Materials Corp | Chip-type thermistor and manufacture method thereof |
| KR20010094693A (en) * | 2000-04-06 | 2001-11-01 | 문창호 | Thermistor and the same manufacturing method |
| CN1176472C (en) * | 2002-11-06 | 2004-11-17 | 祝翌 | Chip-type negative temperature coefficient thermistor and its manufacturing method by pure wet method |
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2007
- 2007-09-12 CN CN200710113776A patent/CN100583317C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4531110A (en) * | 1981-09-14 | 1985-07-23 | At&T Bell Laboratories | Negative temperature coefficient thermistors |
| JP2000357603A (en) * | 1999-06-16 | 2000-12-26 | Mitsubishi Materials Corp | Chip-type thermistor and manufacture method thereof |
| KR20010094693A (en) * | 2000-04-06 | 2001-11-01 | 문창호 | Thermistor and the same manufacturing method |
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| TWI839332B (en) * | 2017-05-22 | 2024-04-21 | 德商維雪電子公司 | Method of producing a ntcr sensor |
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