CN100577557C - Method for assembling semiconductor nano wire - Google Patents
Method for assembling semiconductor nano wire Download PDFInfo
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- CN100577557C CN100577557C CN200810019661A CN200810019661A CN100577557C CN 100577557 C CN100577557 C CN 100577557C CN 200810019661 A CN200810019661 A CN 200810019661A CN 200810019661 A CN200810019661 A CN 200810019661A CN 100577557 C CN100577557 C CN 100577557C
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- semiconductor nanowires
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Abstract
The present invention provides a simply operating method of assembling semiconductor nanowires, the method utilizes capillary force of capillary to directly assemble semiconductor nanowires in liquid phase, in particular including following steps: a. distributed processing semiconductor nanowires to disperse and suspend in the solvent to form semiconductor nanowires suspension; b. stretching processing the top of the capillary to meet the requirement; c. inserting capillary in the semiconductor nanowires suspension, placing a duct for sending air current vertical to the top of the capillary, driving solvent uninterrupted evaporation by transpiration similar to plant by controlling the top speed breadthwise flowing capillary, so the semiconductor nanowires self-assembling bundling under the action of the capillary force and the self gravity. The method not only needs simple structure, convenient operation, but also easy to accuracy control the range and length of the nanowires bundling, used for producing sodium electronic unit.
Description
Technical field
What the present invention relates to is a kind of directly method of assembling semiconductor nano wire from liquid phase of capillary force capillaceous of utilizing, and belongs to the crossing domain of the nano-device manufacturing and the information transmission technology.
Background technology
Although aspect the preparation of nano wire, obtained very big progress in the past in the more than ten years, be applied to the practicality device and still be faced with great challenge, assembling integrated approach and technology wait to break through.And nano wire is made up the macroscopical device that is assembled into specific function is the committed step of nano-wire devices research, i.e. the device development model of so-called " from bottom to top ".This is the only way which must be passed that nano-wire devices moves towards sizable application.Use patterned catalyst, nano wire is the configuration direct growth to design on substrate directly, and does not need further photoetching, but it also is faced with the conventional limited of planar growth and device manufacturing; For realizing being arranged in parallel of nano wire in the plane, developed several different methods: electric field is induced, electrostatic spinning, fluid are movement-oriented, LB film method, the assembling of chemical/biological molecule affinity, magnetic couple is selected and stamp transfer or the like.The LB membrane technology is forming orderly nano wire monofilm and is transferring on the substrate on the water surface, can obtain on than large tracts of land controlled, repeat, and produce multi-level structure; Electrostatic spinning technique is expected to prepare the low-dimensional materials of multiple nanometer or submicron-scale.Can obtain the coaxial composite construction of different polymer by design, and realize nano wire orderly arrangement in the plane parts such as shower nozzle, passive electrodes.Reasonably select the composition with these coaxial composite constructions of design, will make this its have profuse application function, and make the corresponding devices design have good flexibility.But how to obtain the good inorganic semiconductor nano wire of crystal property and provide orderly arrangement to be still challenging problem for the design of functionalization device.Recently, report is a kind of prepares three-dimensional multifunction device method in common based on self-assembled nanowires unit successively.As representational example, assemble ten layers of nano-wire field effect transistor that vertical stacks is stamped with Ge/Si nuclear shell structure nano line.By the nano wire growth of method to realize optimizing of nanocatalyst guiding growth, the substrate transition diagram on second device substrate that adopts the contact method for stamping directly to grow again from nano wire, and in conjunction with plane micro fabrication acquisition device unit construction.For the accurate three-dimensional structure of making, the method for nano wire impression and device preparation is repeated several times, and each interval is the SiO of deposit insulation all
2Cushion is to obtain the electronic shell that vertical stacks is stamped.This processing technology is general for the various nano-materials and the designs of present report, and this simple and reduction process temperature requirements makes it become the acquisition high-performance and can realize a kind of desirable method aspect the three dimensional integrated circuits of difference in functionality at different layers.But for the orderly arrangement architecture of the nano material of the nano wire that obtains in the present solution, nanometer band one dimension, or bunchy, that is that all right is ripe for present achievement in research, also has only these two kinds of methods of microfluid masterplate and LB film in the bibliographical information.
Summary of the invention
Technical problem: the purpose of this invention is to provide a kind of directly method of assembling semiconductor nano wire from liquid phase of capillary force capillaceous of utilizing, be easy to the width range and the length of nano wire bundle are accurately controlled, can be used for preparation and receive opto-electronic device etc.
Technical scheme: the method for assembling semiconductor nano wire of the present invention is utilized directly assembling semiconductor nano wire from liquid phase of capillary force capillaceous, specifically may further comprise the steps:
A. used semiconductor nanowires is carried out dispersion treatment, make its dispersion suspension in solvent form semiconductor nanowires suspension;
B. used capillary is carried out the top stretch processing, make it satisfy the requirement of assembling;
C. capillary is inserted in the semiconductor nanowires suspension, at the conduit of placing the stream of supplying gas perpendicular to the position of capillary over top, control air-flow cross-current is crossed the capillary top speed, make solvent by being similar to the transpiration of plant, drive the evaporation that solvent does not stop, make wherein semiconductor nanowires under the effect of capillary force and self gravitation in capillary the self assembly bunchy.
Described semiconductor nanowires carries out hydrophobic or hydrophilic treated earlier before carrying out dispersion treatment, make nano wire well to be dispersed in the solvent.Stretch processing is carried out at the capillary top, can be controlled the aperture at its top.Assemble nano wire by capillary cutting or interior coating are handled.Described semiconductor nanowires suspension is different types of semiconductor nanowires suspension mixed liquor.
Beneficial effect: the present invention utilizes the directly method of assembling semiconductor nano wire from liquid phase of capillary force capillaceous, the first method equipment needed thereby of the present invention is simple, operation is convenient, second the present invention is easy to the scope of nano wire bundle and length are accurately controlled, and can be used for preparation and receives opto-electronic device etc.
Description of drawings
Fig. 1 is a principle of the invention schematic diagram, wherein has: airflow duct 1, air-flow 2, capillary 3, container 4, nanowire suspended liquid 5.
Concrete embodiment
The method of assembling semiconductor nano wire is utilized directly assembling semiconductor nano wire from liquid phase of capillary force capillaceous, specifically may further comprise the steps:
A. used semiconductor nanowires is carried out dispersion treatment, make its dispersion suspension in solvent form semiconductor nanowires suspension;
B. used capillary is carried out the top stretch processing, control the aperture at its top, make it satisfy the requirement of assembling;
C. capillary is inserted in the semiconductor nanowires suspension, at the conduit of placing the stream of supplying gas perpendicular to the position of capillary over top, control air-flow cross-current is crossed the capillary top speed, make solvent by being similar to the transpiration of plant, drive the evaporation that solvent does not stop, make wherein semiconductor nanowires under the effect of capillary force and self gravitation in capillary the self assembly bunchy.
Described semiconductor nanowires carries out hydrophobic or hydrophilic treated earlier before carrying out dispersion treatment, make nano wire well to be dispersed in the solvent.Described semiconductor nanowires suspension is different types of semiconductor nanowires suspension mixed liquor.
Instantiation is: the silver sulfide semiconductor nanowires for preparing is carried out ultrasonic dispersion treatment, make its dispersion suspension in absolute ethyl alcohol form nanowire suspended liquid; Used capillary is carried out top stretch processing (P-97pipette, SUTTER INSTRUMENT Co.), regulate the parameter of this instrument and control the capillary inner diameter of stretching in 100nm～500nm scope; The capillary of handling well is inserted in the silver sulfide semiconductor nanowires suspension, at the conduit of placing the stream of supplying gas perpendicular to the position of capillary over top, control stream of nitrogen gas cross-current is crossed the capillary top speed, make absolute ethyl alcohol by being similar to the transpiration of plant, drive the evaporation that absolute ethyl alcohol does not stop, make semiconductor nanowires wherein under the effect of capillary force and self gravitation, in capillary, be self-assembled into nano wire bundle.The silver sulfide semiconductor nano wire harness that assembles is cut the nano wire bundle that forms Len req.
Claims (3)
1. the method for an assembling semiconductor nano wire is characterized in that this method utilizes directly assembling semiconductor nano wire from liquid phase of capillary force capillaceous, specifically may further comprise the steps:
A. used semiconductor nanowires is carried out dispersion treatment, make its dispersion suspension in solvent form semiconductor nanowires suspension;
B. used capillary is carried out the top stretch processing, control the aperture at its top, make it satisfy the requirement of assembling;
C. capillary is inserted in the semiconductor nanowires suspension, at the conduit of placing the stream of supplying gas perpendicular to the position of capillary over top, control air-flow cross-current is crossed the capillary top speed, make solvent by being similar to the transpiration of plant, drive the evaporation that solvent does not stop, make wherein semiconductor nanowires under the effect of capillary force and self gravitation in capillary the self assembly bunchy.
2. the method for assembling semiconductor nano wire according to claim 1 is characterized in that described semiconductor nanowires carries out hydrophobic or hydrophilic treated earlier before carrying out dispersion treatment, make nano wire well to be dispersed in the solvent.
3. the method for assembling semiconductor nano wire according to claim 1 is characterized in that described semiconductor nanowires suspension is different types of semiconductor nanowires suspension mixed liquor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810019661A CN100577557C (en) | 2008-03-11 | 2008-03-11 | Method for assembling semiconductor nano wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810019661A CN100577557C (en) | 2008-03-11 | 2008-03-11 | Method for assembling semiconductor nano wire |
Publications (2)
| Publication Number | Publication Date |
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| CN101239700A CN101239700A (en) | 2008-08-13 |
| CN100577557C true CN100577557C (en) | 2010-01-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200810019661A Expired - Fee Related CN100577557C (en) | 2008-03-11 | 2008-03-11 | Method for assembling semiconductor nano wire |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101792120B (en) * | 2010-04-08 | 2012-11-07 | 合肥工业大学 | Method for dispersing nanowires based on epoxy resin drawing film |
| CN103290411B (en) * | 2013-06-20 | 2015-01-14 | 中山大学 | Nano-material transfer deposition method |
| CN108508121B (en) * | 2018-03-28 | 2019-09-13 | 中国科学院化学研究所 | A kind of method that bionical volatilization quickly assembles long photonic crystal capillary column |
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2008
- 2008-03-11 CN CN200810019661A patent/CN100577557C/en not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| 毛细压力法组装纳米聚合物微球的二维有序排列. 钱新明等.应用化学，第16卷第2期. 1999 |
| 毛细压力法组装纳米聚合物微球的二维有序排列. 钱新明等.应用化学，第16卷第2期. 1999 * |
| 毛细微模型制作聚合物微球的有序结构. 吴晓松等.化学物理学报，第16卷第5期. 2003 |
| 毛细微模型制作聚合物微球的有序结构. 吴晓松等.化学物理学报，第16卷第5期. 2003 * |
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| CN101239700A (en) | 2008-08-13 |
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Granted publication date: 20100106 Termination date: 20130311 |