CN100576741C - The method of adjustment of SAW (Surface Acoustic Wave) device centre frequency - Google Patents
The method of adjustment of SAW (Surface Acoustic Wave) device centre frequency Download PDFInfo
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- CN100576741C CN100576741C CN200510022674A CN200510022674A CN100576741C CN 100576741 C CN100576741 C CN 100576741C CN 200510022674 A CN200510022674 A CN 200510022674A CN 200510022674 A CN200510022674 A CN 200510022674A CN 100576741 C CN100576741 C CN 100576741C
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Abstract
The method of adjustment of SAW (Surface Acoustic Wave) device centre frequency, it is characterized in that selecting for use the lithium tetraborate single crystal sheet as the wafer material of making SAW (Surface Acoustic Wave) device, when design and making, make the center frequency ratio nominal mean frequency of SAW (Surface Acoustic Wave) device chip that overgauge be arranged, the SAW (Surface Acoustic Wave) device that is soaked in water then chip, adjust the Cycle Length of interdigital of SAW (Surface Acoustic Wave) device, reduce or eliminate described overgauge.The inventive method is more simple than prior art, need not expensive production equipment, and to other performance undamaged evils of device.
Description
(1) technical field:
The present invention relates to the manufacture method of SAW (Surface Acoustic Wave) device.
(2) background technology:
SAW (Surface Acoustic Wave) device is the signal of telecommunication frequency characteristic control device that utilizes piezoelectric crystal surface electroacoustic or acoustic-electric transfer characteristic to make.It is made of piezoelectric crystal plate and the interdigital transducer (promptly anti-carving the aluminium electrode) of making the pair of cross on it.Interdigital transducer of voltage signal input becomes acoustic signals and propagates in wafer surface.When interdigital electrode Cycle Length (coverages between same electrode two fingers) equals the integral multiple of a conversion of a certain frequency electricity sound wave half-wavelength, resonance takes place, receive this resonance signal by another interdigital transducer, and be transformed into signal of telecommunication output, promptly the signal of telecommunication of this frequency passes through SAW (Surface Acoustic Wave) device.Other electrical signal of the frequency that resonance does not take place can not pass through this SAW (Surface Acoustic Wave) device.So realize control to signal of telecommunication frequency characteristic.Resonance frequency wherein is the centre frequency or the operating frequency of surface wave device.
The centre frequency of SAW (Surface Acoustic Wave) device belongs to the inherent characteristic of device, and it is by interdigital electrode Cycle Length (interdigital distance) and payload (aluminium thickness of electrode) decision.The interdigital electrode Cycle Length increases, and centre frequency reduces; The aluminum membranous layer reduced thickness, payload diminishes, and centre frequency raises; Vice versa.
The general process scheme that SAW (Surface Acoustic Wave) device is made is as follows:
Piezoelectric crystal plate aluminizer → photoetching forms interdigital electrode → scribing → bonding → middle survey → frequency adjustment → encapsulation → test.Wherein, the frequency adjustment is a critical process, the performance and the qualification rate of its decision device.
In the prior art, adopt the method that changes aluminum membranous layer thickness to carry out the frequency adjustment.At first, make by design or technology, make device frequency more lower slightly than standard frequency, minus deviation after photoetching forms interdigital electrode, is used plasma etching equipment attenuate aluminium film thickness then, and device frequency is raise, and reaches the accuracy rating of standard frequency.The shortcoming of this method is to need complicated and expensive equipment, and it is relatively poor to adjust precision, can damage other performances of device.
(3) summary of the invention:
The present invention proposes the method for adjustment of another kind of SAW (Surface Acoustic Wave) device frequency for overcoming above-mentioned defective.Its method is simple, does not need expensive device, and to other performance undamaged evils of device.
The technical scheme of the inventive method is:
Select for use the lithium tetraborate single crystal sheet as the wafer material of making SAW (Surface Acoustic Wave) device, when design and making, make the center frequency ratio nominal mean frequency of SAW (Surface Acoustic Wave) device chip that overgauge be arranged, the SAW (Surface Acoustic Wave) device that is soaked in water then chip, adjust the Cycle Length of interdigital of SAW (Surface Acoustic Wave) device, reduce or eliminate described overgauge; Described overgauge is 2/10000 to 15/10000 of a nominal mean frequency; The temperature that is soaked in water is 10～30 ℃, and the time is 1～100 second.
The present invention utilizes the characteristic that lithium tetraborate (molecular formula LiB4O7) wafer piezoelectric property is good and be slightly soluble in water, the chip of the SAW (Surface Acoustic Wave) device that is soaked in water, make the wafer surface slightly soluble between interdigital, become concave shape, thereby the sound wave that extended has promptly strengthened the interdigital electrode Cycle Length along the path that wafer surface is propagated, and the centre frequency of device is reduced, reduce or eliminate the overgauge of setting, reach the accuracy rating that frequency is adjusted.This shows that the inventive method is more simple than prior art, need not expensive production equipment, and to other performance undamaged evils of device.
(4) embodiment:
To make H243 type Surface Acoustic Wave Filter is example.The lithium tetraborate wafer material that adopts Shanghai Inst. of Silicate, Chinese Academy of Sciences to produce, aluminizer on wafer, during the photoetching interdigital electrode, by mask design or photoetching process control, make interdigital gap ratio nominal mean frequency corresponding spacing thin partially, make the center frequency ratio nominal mean frequency of SAW (Surface Acoustic Wave) device chip that 2/10000～15/10000 overgauge is arranged thus.Carry out scribing, bonding lead, middle survey afterwards, in middle survey operation, adopt the product HP89753 of Hewlett-Packard type network analyzer, measure the centre frequency of each chip, carry out stepping by the exemplary frequency deviation values that is higher than nominal mean frequency, the different positively biased differences of its frequency are the scope that frequency is adjusted.Select a chip as embodiment in each grade chip respectively, insert mesh screen respectively, immerse in the temperature control deionization tank, 23 ± 2 ℃ of control temperature adopt the different time to soak, and drip-dry moisture content after soaking dries up with nitrogen.Centre frequency to each chip is carried out repetition measurement with above-mentioned instrument, and it the results are shown in back table 1.As seen from Table 1, the chip with different overgauges reduces or eliminates the deviate of centre frequency significantly by after the water logging bubble.Based on the actual application requirements, after frequency was adjusted, surface acoustic wave centre frequency and nominal mean frequency comparison finally allowed ± difference of 25KHZ, as its accuracy rating.
Soaking temperature in the table 1 is the representative temperature value.In the actual process operation, this temperature can be at 10～30 ℃, and corresponding by experiment increase or shorten the soak time of chip in water makes the centre frequency of chip reach the accuracy rating of adjustment, and this belongs to technology general knowledge, and its enforcement repeats no more.But soaking temperature is lower than 10 ℃ or be higher than 30 ℃, makes long soaking time or too short, will reduce production efficiency or make technology restive, and optimum temperature is 20～25 ℃.
Table 1HD243 type Surface Acoustic Wave Filter nominal mean frequency fo=243.95MHZ
Soaking temperature (23 ± 2 ℃)
| Test tube core numbering | Centre frequency overgauge (KHZ) | Soak time (second) | Soak back repetition measurement centre frequency (M) |
| 1 | fo+60K | 5 | 243.955(fo+5KHZ) |
| 2 | +90K | 9 | 243.951 +1K |
| 3 | +125K | 15 | 243.944 -6K |
| 4 | +145K | 17 | 243.950 0K |
| 5 | +170K | 22 | 243.952 +2k |
| 6 | +196K | 30 | 243.957 +7K |
| 7 | +220K | 45 | 243.961 +11K |
| 8 | +248K | 60 | 243.964 +14K |
| 9 | +265K | 70 | 243.949 -1K |
| 10 | +296K | 80 | 243.957 +7K |
| 11 | +324K | 90 | 243.958 +8K |
| 12 | +350K | 100 | 243.961 +11K |
Claims (2)
1, the method for adjustment of SAW (Surface Acoustic Wave) device centre frequency, select for use the lithium tetraborate single crystal sheet as the wafer material of making SAW (Surface Acoustic Wave) device, when design and making, make the center frequency ratio nominal mean frequency of SAW (Surface Acoustic Wave) device chip that overgauge be arranged, the SAW (Surface Acoustic Wave) device that is soaked in water then chip, adjust the Cycle Length of interdigital of SAW (Surface Acoustic Wave) device, reduce or eliminate described overgauge, it is characterized in that described overgauge is 2/10000 to 15/10000 of a nominal mean frequency, the described temperature that is soaked in water is 10～30 ℃, and the time is 1～100 second.
2, by the method for adjustment of the described SAW (Surface Acoustic Wave) device centre frequency of claim 1, it is characterized in that the described temperature that is soaked in water is 20～25 ℃.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200510022674A CN100576741C (en) | 2005-12-28 | 2005-12-28 | The method of adjustment of SAW (Surface Acoustic Wave) device centre frequency |
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| CN100576741C true CN100576741C (en) | 2009-12-30 |
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| CN102412802A (en) * | 2011-11-24 | 2012-04-11 | 中国电子科技集团公司第二十六研究所 | Frequency correcting method for substrate grade acoustic surface wave device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310425B1 (en) * | 1999-03-25 | 2001-10-30 | Sanyo Electric Co., Ltd. | Surface acoustic wave device |
| CN1510833A (en) * | 2002-12-17 | 2004-07-07 | ������������ʽ���� | Frequency adjusting method for surface sound wave device and electronic apparatus |
| CN1707943A (en) * | 2004-06-09 | 2005-12-14 | 精工爱普生株式会社 | Frequency adjustment method of surface acoustic wave device, surface acoustic wave device, and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6310425B1 (en) * | 1999-03-25 | 2001-10-30 | Sanyo Electric Co., Ltd. | Surface acoustic wave device |
| CN1510833A (en) * | 2002-12-17 | 2004-07-07 | ������������ʽ���� | Frequency adjusting method for surface sound wave device and electronic apparatus |
| CN1707943A (en) * | 2004-06-09 | 2005-12-14 | 精工爱普生株式会社 | Frequency adjustment method of surface acoustic wave device, surface acoustic wave device, and electronic device |
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