CN100576603C - Light emitting devices - Google Patents
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- CN100576603C CN100576603C CN200610099830A CN200610099830A CN100576603C CN 100576603 C CN100576603 C CN 100576603C CN 200610099830 A CN200610099830 A CN 200610099830A CN 200610099830 A CN200610099830 A CN 200610099830A CN 100576603 C CN100576603 C CN 100576603C
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Abstract
A kind of light emitting devices comprises: light emitting area comprises luminous organic material; First electrode, the observation side that is positioned at light emitting area is used to inject first kind electric charge carrier; Second electrode comprises hyaline layer, and the non-observation side that is positioned at light emitting area is used to inject the second class electric charge carrier; And contrast strengthens structure, this structure is positioned at the non-observation side of light emitting area and comprises the Bragg reflector of a distribution, the Bragg reflector of this distribution has around the reflectance peak of the emission wavelength of light emitting area, wherein said hyaline layer is between the Bragg reflector and light emitting area of this distribution, wherein first or second electrode is a negative electrode, and this negative electrode comprises the barium metal of coevaporation and the fluoride or the hopcalite of low workfunction metal.The present invention can improve the effect that display produces.
Description
The application is to be the dividing an application of Chinese patent application 200410082616.4 on December 7th, 1999 applying date.
Technical field
The present invention relates to display unit.
Background technology
A kind of display unit of special kind is to use organic material to be used for the light emission.Being described among PCT/WO90/13148 and the US4539507 of light emission organic material, the content of these two patents are drawn at this and are reference.The basic structure of these devices is light emission organic layers, and for example a strata (P-phenylene vinylene) (" PPV ") film is clipped between two electrodes.An electrode (negative electrode) injects charge carriers (electronics) and another electrode (anode) injects positive carrier (hole).Electronics combines in organic layer with the hole and produces photon.Organic light-emitting material is a polymer in PCT/WO90/13148.Organic light-emitting material is the kind that is called small molecule material in US4539507, for example (8-hydroquinoline) aluminium (" Alq3 ").In an actual device, one of electrode is transparent typically, so that make photon energy select device.
Fig. 1 represents the representative section structure of an organic light-emitting devices (" OLED ").This OLED typically is produced on first electrode 2 that a slice applies layer of transparent, for example on the glass or plastic 1 of tin indium oxide (" ITO ").The substrate of this coating is commercially available.Apply one deck electroluminescence organic material film 3 and a final layer that forms second electrode 4 at least on this ITO coated substrate, a kind of typically metal or alloy of this layer.Can on device, increase other layer, for example in order to improve the charge transfer between two electrodes and the electric luminescent material.
If the luminous energy that incides on the display back reflects to the observer, especially show dark-coloured pixel area from expection, then can reduce the outer apparent contrast between each pixel of display.This will reduce the validity of display.
It is that the application scenario-example of a decisive Consideration is for example hand-held computer and a mobile phone of the device that starts of battery pack that many display unit are used in power consumption.Therefore need to improve the efficient of display.
Summary of the invention
According to one aspect of the present invention, a kind of light emitting devices is provided, comprising: a light emitting area; Be positioned at first electrode of the observation side of light emitting area, be used to inject first kind electric charge carrier; With second electrode of the non-observation side that is positioned at light emitting area, be used to inject the second class electric charge carrier; And wherein have a reflectivity to influence structure, this structure is positioned at the non-observation side of light emitting area and comprises a light absorbing zone of being made up of the fluoride or the oxide of graphite and a kind of low workfunction metal.
According to a second aspect of the present invention, provide a light emitting devices to comprise: a light emitting area; Be positioned at first electrode of the observation side of light emitting area, be used to inject first kind electric charge carrier; With second electrode of the non-observation side that is positioned at light emitting area, be used to inject the second class electric charge carrier; And wherein there is a reflectivity to influence structure, this structure is in the non-observation side of light emitting area and comprise a reflection layer and the transmittance wall between advanced luminous intensity distribution reflector, and the such thickness of this wall can make the plane of reflection of reflection layer be about half of device light type wavelength from the spacing of at least a portion light emitting area.
First electrode is preferably to the small part printing opacity, best substantial transparent, at least for part or all of can be by the light of the wavelength of device emission.First electrode can be formed by for example ITP (tin indium oxide), TO (tin oxide) or gold.First electrode preferably is arranged on the observed bearing of light emitting area-promptly between the observer position of light emitting area and expection.First electrode can have the form of layer.Comprise at device under the situation of an above pixel, more than one first electrode can be provided, realization (cooperating with second electrode) is each pixel of addressing one by one.
Second electrode can be to the small part printing opacity, is fit to substantial transparent, at least for part or all of can be by the light of the wavelength of device emission.This can by form by a kind of light transmissive material second electrode and by make the thin for example thickness of second electrode less than 2,5,10,20 or 30nm realize.The suitable material of second electrode comprises lithium, calcium or ITO.Perhaps, second electrode can be reflection or unreflecting light absorber.In this case, the best cremasteric reflex rate of second electrode own influences structure.At second electrode is the occasion of light absorber, it can for example fluoride or the oxide of low workfunction metal such as Li, Ca, Mg, Cs, Ba, Yb, Sm etc. (supply choosing ground by a kind of light absorbing material, with electric conducting material Al for example, can be with it and oxide or fluoride codeposition) form, or for example carbon (graphite) forms or best codeposition forms to add light absorbing material by a kind of low workfunction metal.Described low workfunction metal can have the work function that is lower than 4.0eV.Described low workfunction metal can have the work function that is lower than 3.5eV.Described low workfunction metal can have the work function that is lower than 3.2eV.Described low workfunction metal can have the work function that is lower than 3.0eV.The OK range of second thickness of electrode is preferably in 100 to 300nm the scope between 50 to 1000nm.
First electrode and second electrode preferably include electric conducting material, for example metal material.One of them electrode (hole injecting electrode) preferably has the work function greater than 4.3eV.This layer can comprise a kind of metal oxide, for example for example Au or Pt of tin indium oxide (" ITO ") or tin oxide (" TO ") or a kind of high-work-function metal.This electrode can be first electrode or second electrode.Another electrode (electron injection electrode) preferably has the work function that is lower than 3.5eV.This layer can compatibly be constituted or be made of with other metal (for example Al) alternatively a kind of alloy that comprises one or more these metals or sandwich construction by a kind of metal (Ca, Ba, Yb, Sm, Li etc.) with low work function.This electrode can be second electrode or first electrode.Rear electrode has at least a part to be preferably light absorber.This can by in electrode, add one deck light absorbing material for example carbon realize.This material preferably also has conductivity.
Reflectivity influences structure can be positioned at second electrode vicinity.At this moment reflectivity influences the reflectivity that structure can suitably influence device rear portion (non-observation side), is (for example) basic light absorption or basic light reflection.Reflectivity influences structure can comprise distinct basic light absorption and basic reflection region.
According to a first aspect of the present invention, reflectivity influences structure can comprise a light absorbing zone.This layer is suitable for by second electrode of the light of launching from light emitting area and absorbs the light that sees through second electrode and absorb the light that has incided on the device from another light source reducing reflection.It is contiguous that this light absorbing zone preferably is positioned at second electrode; Perhaps also can separate, for example by a slice insulating material with second electrode.The existence that influences structure in abutting connection with reflectivity second electrode or that be more typically in the second electrode back suitably makes second electrode not reflect basically from the light of emitter region emission.This light absorbing zone preferably by a kind of light absorbing material form-for example the light reflectivity light absorbing zone that influences structure can comprise graphite.Comprise the occasion of a plurality of indivedual pixels at device, light absorbing zone is preferably general to a plurality of pixels.
According to a second aspect of the present invention, reflectivity influences structure can comprise a reflection layer.This layer is suitable for influencing the light field (for example antinode of light field) of appearance in the device and the part of light emitting area.This part of light emitting area is suitable for a zone that some or a large amount of electron/hole-recombination (preferentially producing photon) are arranged.Described part preferentially is a main compound place or the plane that light is penetrated layer.Compound place of the peak value that described part is preferably installed or plane.Reflectivity influences structure and preferably includes one at second electrode transmittance wall between the reflection layer therewith, is suitable for reflection layer being separated with light-emitting layer and preferably reaching a predetermined spacing.This wall can provide by the material that itself is connected as a single entity with second electrode-for example by the thickness of second electrode.The distance that the reflector that the thickness of wall preferably can make reflectivity influence structure leaves at least a portion light emitting area is about half of wavelength of device light type.This reflector can be one of the first type surface (from nearer or far away those of light-emitting layer) in reflector, maybe can be a catoptric arrangement (for example Bragg reflector of a distribution) by the reflector regulation.The thickness of wall preferably can make reflector with the light field in the light emitting area roughly or basically be in distance that the zone of peak value separates be device light type wavelength approximately or substantially half.
Light absorbing zone or reflection layer that reflectivity above-mentioned influences structure preferably keep the light contact with the light-emitting layer of device, make the light from light-emitting layer can arrive light absorbing zone or reflection layer.
Reflectivity influences that structure preferably conducts electricity, and is suitable for influencing structure by reflectivity and realizes electrically contacting second electrode.
According to a third aspect of the present invention, provide a light emitting devices to comprise: a light emitting area; One is positioned at showing of light emitting area and examines side and be used to inject first electrode of first kind electric charge carrier and second electrode that non-observation side that is positioned at light emitting area is used to inject the second class electric charge carrier; Strengthen structure with contrast, this structure is positioned at the non-observation side of light emitting area and comprises that an incident light to different wave length has different reflectivity and has the catoptric arrangement of a reflectance peak around an emission wavelength of light emitting area.According to this respect of the present invention, it is the Bragg reflector of a distribution that catoptric arrangement is fit to.According to this respect of the present invention, second electrode is fit to comprise a layer that is positioned at the non-observation side of catoptric arrangement, and a plurality of path of conducting electricity between the described layer of second electrode and light emitting area of being used for by catoptric arrangement.These paths preferably account for below 15% or below 10% of emission area of device.These paths can account for device emission area 15% and 5% between.According to this respect of the present invention, negative electrode can comprise a hyaline layer between catoptric arrangement and light emitting area.This hyaline layer can contact with those paths.
Usually, light-emitting material is suitably for a kind of organic material and is preferably a kind of polymeric material.Light-emitting material is preferably a kind of polymeric material of semiconductive and conjugation.Perhaps light-emitting material can be other type, for example Sheng Hua micromolecule film or inorganic light-emitting material.Each organic light-emitting material can comprise one or more other organic materials, is suitably for polymer, is preferably the polymer of all or part of conjugation.Material for example comprises any combination of one or more following materials: multiple (P-phenylene vinylene) (" PPV "), multiple (support of 2-methoxyl group-5 (2 ' ethyl) hexyl oxygen phenylene ethylene) (" MEH-PPV "), one or more PPV-derivatives (for example 2-alkoxyl or 2-alkyl biology), many fluorenes and add the copolymer of many fluorenes segment, PPV and relevant copolymer, multiple (2.7-(9.9-2-n-octyl group fluorenes)-(1.4-penylene-((the dried butyl phenyl of 4-) imino group)-1.4-penylene)) (" TFB "), multiple (2.7-(9.9-2-n-octyl group fluorenes)-(1.4-penylene-((4-aminomethyl phenyl) imino group)-1.4-penylene-((4-aminomethyl phenyl) imino group)-1.4-penylene)) (" PEM "), multiple (2.7-(9.9-2-n-octyl group fluorenes)-1.4-penylene-((4-aminomethyl phenyl) imino group)-1.4-penylene-((4-aminomethyl phenyl) imino group)-1.4-penylene)) (" PFMO "), multiple (2.7-(9.9-2-n-octyl group fluorenes)-3.6-benzothiazole) (" F8BT ").Substitution material comprises for example Alq3 of small molecule material.
Between light emitting area and one or two electrode, can provide one or more charge transport layers.Each charge transport layer can compatibly comprise one or more polymer, the polystyrolsulfon acid (" PEDOT-PSS ") of polyethylene dihydroxy thiophene for example mixes, multiple (2,7-9.9-2-n-the octyl group fluorenes)-(1.4-penylene-(4-imino group (benzoic acid)-1.4-penylene-(4-imino group (benzoic acid))-1.4-penylene)) (" BFA "), polyaniline and PPV.
Any true bearing that means of device not necessarily with use or make during its true bearing interrelate.
Description of drawings
To the present invention be described by the exemplary method of reference accompanying drawing now, in these accompanying drawings:
Fig. 2 is the cutaway view of one first device;
Fig. 3 is the plane graph of one second device;
Fig. 4 is the cutaway view of an online A-A ' position of Fig. 3 device;
Fig. 5 is the cutaway view of one the 3rd device;
Fig. 6 is the plane graph of one the 4th device;
Fig. 7 is the cutaway view of one the 4th device;
Fig. 8 represents the reflectivity of a DBR with respect to various wavelength.
These figure are not to scale (NTS).
Embodiment
The device of Fig. 2 comprises an anode layer 10, with a cathode layer 11.Between these two electrode layers is a light-emitting material layer 12.Anode is formed by transparent ITO.Negative electrode is formed by calcium.Enough thin the making it of negative electrode can not usable reflection.In the back of negative electrode is a carbon-coating 13.When applying a suitable voltage between the two poles of the earth, light is essentially no directionally to be launched from light emitting area.Part light directive anode also passes through anode and directly penetrates from device.Part light is the directive negative electrode backward.The incident light that impinges upon on the display from external light source can be absorbed by carbon-coating 13.Because this light is absorbed, so it is back to observer's reflection-this can improve the effect that display produces, as following detailed description.
The sheet glass of the coating ITO that can buy on the device of Fig. 2 available one electric market begins to form.This sheet glass (among Fig. 2 14) is configured for the substrate of follow-up deposition step.This sheet glass can be that thickness is soda lime or the borosilicate glass of for example 1mm.For example can using, other material of polymethyl methacrylate (Perspex) replaces glass.The thickness of ITO coating compatibly is about 100 to 150nm, and ITO compatibly has a sheet resistor between 10 to 30 Ω/.Hole transport of deposition or implanted layer 15 on ito anode.This hole transmission layer is by containing PEDOT: the wherein PEDOT of PSS is about 1: 5 solution to the ratio of PSS and forms.The thickness of this hole transmission layer compatibly is about 50nm.The spin coating in solution of this hole transmission layer was typically cured under 200 ℃ 1 hour in nitrogen environment then.Apply the electroluminescence layer 12 that comprises 20%TFB among the 5BTF8 then on hole transmission layer, typically being spin-coated to thickness is 90nm.Term 5BTF8 refers to again (multiple (2.7-(9.9-2-n-octyl group fluorenes)-3.6-benzothiazole) (" F8BT ") of 2.7-(9.9-2-n-octyl group fluorenes) (" F8 ") doping 5%.Then a low-work-function material for example the transparent or semitransparent layer of calcium be lower than 10 at basic pressure
-8In the vacuum of mbar thermal evaporation on the electroluminescence layer to form anode layer 11.The thickness of this layer is more preferably greater than 1nm but make the calcium layer become opaque thickness-typical case less than meeting to be about 20nm.On this layer, be lower than 10 at basic pressure by electron beam evaporation
-8Thickness of mbar deposit 100 and 500nm between carbon-coating 13.Use sputtering method to be lower than 10 above the carbon-coating at this at basic pressure
-8Thickness of mbar deposit 100 and 1000nm between aluminium lamination 16.In the present embodiment, select low work function layer 11 as the effective electron injector that electronics is injected light emitting area.Carbon-coating 13 is as absorbed layer and have one to hang down to being enough to the unlikely conductance that increases the drive pressure of device significantly.The aluminium lamination 16 of sputter plays the sealant effect, is of compact construction, and low pinprick density and little particle size are arranged.Contact point can be fixed on the device (between layer 16 and 10) and be sealed in it in the epoxy resin as environmental protection so long at last.
Fig. 3 and Fig. 4 represent that one is used above-mentioned principle and the associated many pixels display unit of Fig. 2 device.This device comprises one group of parallel anode strap 20 in a public anode plane and one group of parallel cathode strip 21 in a common cathode plane that separates with anode planes.It between anode and negative electrode a light-emitting layer 22.The pixel of display unit is determined in the staggered zone of anode strap and cathode strip.By using a passive matrix addressing scheme can cause that each pixel is luminous.(device can replace and be configured to allow use active matrix or other addressing scheme.) Fig. 4 represents that each negative electrode comprises 3 layers: one in abutting connection with the low-work-function material of light-emitting layer 22 75, one light absorbing materials of implanted layer of forming of calcium intermediate layer 76 of forming of carbon (graphite) for example for example, with the high conductive material conductive layer 77 that forms of aluminium for example.These layers are formed a cathode plane 81 together.Usually, implanted layer is suitable for a kind of material with good injection light-emitting layer 22 performances; The intermediate layer is suitable for a kind ofly has the material of good absorbing properties and conductive layer is suitable for a kind of high conductive material.Conductive layer can be significantly than other two bed thickness and preferably help along electrode structure distributed charge equably.Also can carry out the occasion of another layer function at selected material as one deck, at this moment another layer can omit.For example, if the light-emitting material of selecting be a kind of can inject from the electric charge that carbon obtains into material, then layer 75 can omit, if with/or the layer 75 that provides have enough conductivity with layer 76, then layers 77 can omit.Light absorbing zone 76 preferably is between other two-layer (under occasion of the two existence), and it should conduct electricity in the case, but it also can be in other two-layer back.Scheme, or other scheme as an alternative can provide a light absorbing zone (layer 29 among Fig. 4) that covers total.If this layer by electric conducting material for example carbon form, then can provide an insulating barrier 23 to prevent short circuit between each cathode strip 21.
The effect of light absorbing zone 76 is to absorb the light be incident on the display, thereby not so this luminous energy causes the reduction of contrast from display reflects.This has been done graphic representation by light 80 among Fig. 4, their tegillums 23 and 29 absorb.Therefore light absorbing zone helps to increase contrast.Light absorbing zone also can help to reduce the transmission of light in device self from light-emitting layer 22 emissions.This can be by being avoided helping increase contrast from the pixel different with radiative pixel from this light that device produces in a certain position.
Be applied to layer 77 from one of contact point of display driver.
Also can between the front of light-emitting layer 22 is with each pixel, the form of lateral isolation provide a carbon-coating or other not reflector with further minimizing environment reflection of light.
The above-mentioned thus principle about Fig. 2 to Fig. 4 device can by reduce than the emission of the light at angle of inclination with reduce reflect ambient light and improve contrast and the photoemissive pattern of improvement between the adjacent image point of device from a single pixel.
Fig. 5 represents another display unit.This device comprises an anode layer 40 and a negative electrode 41.Between two electrode layers is a light-emitting material layer 42.Anode and negative electrode are formed by transparent ITO.Perhaps, for example, two electrodes can by a kind of low-work-function material for example the thin layer of calcium form in abutting connection with a transparent spacers that forms by for example materials such as ITO, ZnSe, ZnS.When applying a suitable voltage between two electrodes, from the unoriented basically light of light-emitting material emission.Part light directive anode forward also directly penetrates from device by anode.Part light is the directive negative electrode backward, enters one totally with 43 catoptric arrangements of indicating by it.This catoptric arrangement comprises a reflector 44 and a transparent wall 46.Wall 46 is between negative electrode 41 and reflector 44 and separate the reflector with light emitting area 42.The reflector makes it can back pass through negative electrode 41, light-emitting layer 42, anode 40 with glass substrate 47 and from device ejaculation (referring to light 48) to the light of back reflective emission forward.
The shape of curve 49 expression light fields among Fig. 5, and in regional 50 indication devices electron/hole-recombination to produce the strongest zone of photon.Device corresponding characteristics to Fig. 1 is represented with 60 and 61 respectively.Be chosen as to the ideal thickness of the wall in Fig. 5 device and made the plane of returning the reflector 44 of launching light action backward one of (or plane) separate a distance with emission layer, this distance makes that the peak dot (referring to curve 49) of the optical mode that entire emission is arranged under at least one tranmitting frequency of device is consistent with the peak value electron/hole-recombination zone in the light-emitting layer that installs.This result be since the light in Fig. 5 device produce area arrangements one than Fig. 1 device in the more effective plane, the peak dot (antinode) by the adjustment light field makes consistent with the peak value hole/electron recombination zone of emission layer.This optimization (or to small part optimization) is for the position of effective light generation of a setted wavelength.The wavelength of installation optimization preferably equals or approaches the emission wavelength of peak strength.This ideal arrangement requires very accurately each layer at interval; Yet, by generally or basically arranging that with the method each layer can obtain significant benefit.
Fig. 5 device can form by the approach that is similar to the above-mentioned Fig. 2 of being used for device, can reach cathode layer.Then for Fig. 5 device, form wall 46 by deposition ITO, ZnSe, ZnS or similar material to the thickness that requires, be preferably formed in a low work function for example on the thin layer surface of calcium.On the ITO wall by reflecting material for example aluminium form reflector 44.In an alternate embodiment, can use a conductor that is right after negative electrode or separates with negative electrode and dielectric heap as reflector.This heap can for example alternately be made up of ITO and NiO layer.
In another alternate embodiment, one of electrode can influence material by a kind of reflectivity and form.Male or female can be reflection or unreflecting (light absorber).This can obtain by selecting a kind of material with the reflecting properties of requirement and charge-conduction preferably and injection efficiency.Can handle a kind of electric reflectivity performance of suitable material (for example by surface treatment or add a kind of reflectivity influence additive) that to obtain requiring.
A special-purpose example is that rear electrode (from observer's electrode farthest) is unreflecting.In a device of usually as Fig. 1 is in Fig. 5, arranging, require a unreflecting negative electrode.(anode can be a rear electrode in other device.) be used to reflect or not a kind of suitable material of reflective cathode be LiF: Al.As LiF: the composition of Al this film greater than 50% time reflects in the Al film.This film is unreflecting when the composition of Al is between 50% and 30%.When the composition of Al this film less than 30% time is translucent, but has very high resistivity.Therefore, at LiF: the ratio of Al is that the LiF/Al film can be used for making black (not reflecting) negative electrode in 50: 50 to 70: 30 scopes.
Can make a device for example that a unreflecting rear electrode (being negative electrode in this example) arranged with the following method.A thick ITO of 150nm is deposited upon on a slice glass substrate as an anode.Deposit the thick PEDOT/PSS layer of 50nm then as a hole transmission layer.Form in the above 80nm thick be many fluorenes layer of base material with the electroluminescence polymer.Deposit the LiF of the thick coevaporation of 200nm and Al layer (evaporation rate of LiF: Al is 60: 40) at last as reflective cathode layer not.Al layer that 400nm is thick of deposition on the end face of this layer.When changing the device of this special designs, should note LiF: the possible thickness range of Al layer depends on its composition, because the ratio of LiF is big more in the layer, layer will become transparent more.For the LiF that consists of 60: 40: the Al layer, the thickness of 200nm is just in time enough.Suitable thickness range is to 1000nm from 50.
The not reflective cathode material that substitutes generally includes for example Li of low-work-function material, Ca, Mg, the fluoride of Cs and oxide, preferably with a kind of metal that high conductivity arranged for example Al or Cu one work (but in some cases may less preferential use Cu, because it trends towards suppressing the electroluminescence of polymer).Concrete example comprises CsF, MgF, CaF, LiO, CaO, and they can be with the Al coevaporation, or by a combination target sputter that comprises Al.Conductor (Al) can determine by test in every example easily with the ratio that requires of fluoride and the oxide of insulation, but can expect should be similar to above to LiF: those numerical value of Al system discussion.Another alternative route to antiradar reflectivity or unreflecting negative electrode is with carbon coevaporation together or sputter a kind of low-work-function material.Example comprises low-work-function material Ca, Li etc. and fluoride of listing above and oxide.
Fig. 6 is the plane graph of another replacement device and Fig. 7 is its cutaway view.This device comprises Bragg reflector (DBR) layer 65 of 64, one distributions of 63, one light-emitting layers of 62, one negative electrodes of 60, one hole transmission layers of an anode.DBR is positioned at the non-observation side of light emitting area.The essential part of negative electrode 63 (66) is positioned at the non-observation side of DBR.For making charge energy lead to light emitting area, provide cathode passage 67 by DBR from the essential part of negative electrode.This path occupies a device area than small scale: for example about 15% to 5%.For the electric charge that makes output evenly injects emission layer, between DBR and light emitting area, provide one to be thinned to and to be enough to another transparent cathode layer 68.If DBR conducts electricity, or channel spacing is intensive, perhaps can obtain uniformity, and then layer 68 can omit.Can form the path (referring to Fig. 6) that mesh-shape is arranged by the deposition of a shadowing mask.
DBR be included as satisfy the Bragg condition that under specific wavelength, reflects and a pile of making regularly arranged alternate higher with than the dielectric (light transmitting material) of antiradar reflectivity.This situation appears in the half that periodic light path is equivalent to wavelength in dielectric heap, and when the DBR heap in accordance with below during equation, reflectivity is further optimized:
1/2λ＝n2d2+n2d2，
N1, n2 are the reflectivity of each several part in the formula; D1, d2 are the film thickness of appropriate section among the DBR; And λ is the catoptrical wavelength that requires.Fig. 8 represents the reflectivity of a DBR and the corresponding relation of wavelength, and reflectivity reaches peak value at wavelength optimum value place, and much lower to other wavelength reflectivity.
DBR arranges like this and drops in the reflectance peak district of DBR with the emission wavelength (or its main emission wavelength) that causes light-emitting layer in the device of Fig. 6 and Fig. 7, and is preferably in or near the high reflectance place of DBR.This result shows that DBR can play the contrast of rising device and reduces the effect of its efficient not obviously.The light of launching backward from light-emitting layer by DBR effectively (for example with about reflectivity of 95% to 100%) reflect to the observer through returning.Be not equal to or keep off in the emission wavelength of light-emitting layer thereby the incident light in the reflectance peak district at DBR not, much less (for example having only 5% to 10%) is wanted in its reflection, trends towards being absorbed by DBR, thereby has improved the contrast of device.The peak reflectivity of DBR also can be used for strengthening the color purity from the light of device emission.
Path can produce reflection to a wave-length coverage, therefore preferentially the path area occupied is reduced to minimum, for example less than 15% and preferably less than 10%.
Some changes to said apparatus will be described now.In arbitrary device, can between light-emitting layer and arbitrary or two electrodes, form one or more charge transport layers (for example layer 15,70,71) with the charge transfer between help respective electrode and the light-emitting layer, with/or impedance charge transfer in opposite direction.Above-mentioned principle can be applicable to the organic or inorganic display unit of other type.A specific alternate examples is to use the display unit kind of the molecular film of distillation as light-emitting layer, for example at " Organic Electroluminescent Diodes ", described in the C.W.Tang and S.A.Wanslyke, Appl.Phys.Lett.51,913-915 (1987).The position that can put upside down the two poles of the earth make negative electrode in the front portion of display (approaching the observer most) and anode at the back.Can use other material or material category to replace material above-mentioned or material category, but do the performance that may influence device like this.
Applicant's following fact of drawing attention to: the present invention can comprise and hint herein or express disclosed any feature or characteristics combination or any summary of doing therefrom, and is not subjected in these claims the restriction of arbitrary scope.In view of the front narration, it will be obvious to those skilled in the art that and to carry out various modifications within the scope of the invention.
Claims (7)
1. light emitting devices comprises:
Light emitting area comprises luminous organic material;
First electrode is positioned on the observation side of light emitting area and is used to inject first kind electric charge carrier;
Second electrode comprises hyaline layer, is positioned on the non-observation side of light emitting area to be used to inject the second class electric charge carrier; And
Contrast strengthens structure, this structure is positioned on the non-observation side of light emitting area and comprises the Bragg reflector of a distribution, the Bragg reflector of this distribution has around the reflectance peak of the emission wavelength of light emitting area, wherein said hyaline layer is between the Bragg reflector and light emitting area of this distribution
Wherein first or second electrode is a negative electrode, and this negative electrode comprises the barium metal of coevaporation and the fluoride or the hopcalite of low workfunction metal.
2. according to the light emitting devices of claim 1, wherein second electrode also comprises a layer on the non-observation side that is positioned at reflector, and a plurality of by reflector, be used for the path that between the described layer of second electrode and light emitting area, conducts electricity.
3. according to the light emitting devices of claim 2, wherein said path accounts for below 15% of emission area of this device.
4. according to the light emitting devices of claim 2, wherein hyaline layer contacts with path.
5. according to the light emitting devices of claim 1, wherein second electrode comprises electric conducting material.
6. according to the light emitting devices of claim 1, wherein light-emitting material comprises the polymer light-emitting material.
7. according to the light emitting devices of claim 1, wherein light-emitting material comprises conjugated polymer material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9827014.3 | 1998-12-08 | ||
| GBGB9827014.3A GB9827014D0 (en) | 1998-12-08 | 1998-12-08 | Display devices |
| GB9901334.4 | 1999-01-21 |
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| CNB2004100826164A Division CN100420062C (en) | 1998-12-08 | 1999-12-07 | Display devices |
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| CN1897324A CN1897324A (en) | 2007-01-17 |
| CN100576603C true CN100576603C (en) | 2009-12-30 |
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| CN200610099830A Expired - Fee Related CN100576603C (en) | 1998-12-08 | 1999-12-07 | Light emitting devices |
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| CN (1) | CN100576603C (en) |
| GB (1) | GB9827014D0 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050636B (en) * | 2011-10-17 | 2016-01-13 | 海洋王照明科技股份有限公司 | Top emission organic electroluminescence diode and preparation method thereof |
| JP6128020B2 (en) * | 2013-04-10 | 2017-05-17 | ソニー株式会社 | Electronic device, solid-state imaging device, and electrode forming method in electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352543A (en) * | 1990-10-31 | 1994-10-04 | Goldstar Co., Ltd. | Structure of thin film electroluminescent device |
| CN1137689A (en) * | 1995-06-02 | 1996-12-11 | 黄国欣 | Luminous diode structure |
| CN1182343A (en) * | 1996-10-22 | 1998-05-20 | 伊拉姆－电致发光工业有限公司 | Electroluminescent light source |
| CN1177378C (en) * | 1998-12-08 | 2004-11-24 | 剑桥显示技术有限公司 | Display devices |
-
1998
- 1998-12-08 GB GBGB9827014.3A patent/GB9827014D0/en not_active Ceased
-
1999
- 1999-12-07 CN CN200610099830A patent/CN100576603C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352543A (en) * | 1990-10-31 | 1994-10-04 | Goldstar Co., Ltd. | Structure of thin film electroluminescent device |
| CN1137689A (en) * | 1995-06-02 | 1996-12-11 | 黄国欣 | Luminous diode structure |
| CN1182343A (en) * | 1996-10-22 | 1998-05-20 | 伊拉姆－电致发光工业有限公司 | Electroluminescent light source |
| CN1177378C (en) * | 1998-12-08 | 2004-11-24 | 剑桥显示技术有限公司 | Display devices |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1897324A (en) | 2007-01-17 |
| GB9827014D0 (en) | 1999-02-03 |
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