CN100573951C - Phase change memory apparatus and manufacture method thereof - Google Patents
Phase change memory apparatus and manufacture method thereof Download PDFInfo
- Publication number
- CN100573951C CN100573951C CNB2007100072480A CN200710007248A CN100573951C CN 100573951 C CN100573951 C CN 100573951C CN B2007100072480 A CNB2007100072480 A CN B2007100072480A CN 200710007248 A CN200710007248 A CN 200710007248A CN 100573951 C CN100573951 C CN 100573951C
- Authority
- CN
- China
- Prior art keywords
- phase change
- change memory
- electrode
- cup
- memory apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008859 change Effects 0.000 title claims abstract description 126
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 69
- 238000010438 heat treatment Methods 0.000 claims abstract description 51
- 239000012782 phase change material Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 32
- 229910021332 silicide Inorganic materials 0.000 claims description 29
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 16
- 239000000956 alloy Substances 0.000 claims description 16
- 239000010941 cobalt Substances 0.000 claims description 14
- 229910017052 cobalt Inorganic materials 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- -1 cobalt nitride Chemical class 0.000 claims description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 8
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910000765 intermetallic Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 6
- 229910000763 AgInSbTe Inorganic materials 0.000 claims description 5
- 229910001215 Te alloy Inorganic materials 0.000 claims description 5
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 5
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 claims description 4
- YDVGDXLABZAVCP-UHFFFAOYSA-N azanylidynecobalt Chemical compound [N].[Co] YDVGDXLABZAVCP-UHFFFAOYSA-N 0.000 claims description 4
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 claims description 4
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 4
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 4
- 229940112669 cuprous oxide Drugs 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- 229910000531 Co alloy Inorganic materials 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims 2
- 229910001362 Ta alloys Inorganic materials 0.000 claims 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims 2
- 229910001080 W alloy Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 99
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001786 chalcogen compounds Chemical group 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Abstract
Description
Claims (28)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100072480A CN100573951C (en) | 2007-01-25 | 2007-01-25 | Phase change memory apparatus and manufacture method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100072480A CN100573951C (en) | 2007-01-25 | 2007-01-25 | Phase change memory apparatus and manufacture method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101232074A CN101232074A (en) | 2008-07-30 |
CN100573951C true CN100573951C (en) | 2009-12-23 |
Family
ID=39898368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100072480A Active CN100573951C (en) | 2007-01-25 | 2007-01-25 | Phase change memory apparatus and manufacture method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100573951C (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI426604B (en) * | 2008-06-03 | 2014-02-11 | Higgs Opl Capital Llc | Phase-change memory devices and methods for fabricating the same |
JP5696378B2 (en) * | 2010-06-15 | 2015-04-08 | ソニー株式会社 | Manufacturing method of storage device |
CN102376882B (en) * | 2010-08-19 | 2013-07-17 | 中芯国际集成电路制造(上海)有限公司 | Ring electrode and forming method |
CN106206938B (en) * | 2015-06-01 | 2019-01-18 | 江苏时代全芯存储科技有限公司 | Phase-change memory and its manufacturing method |
US10418356B2 (en) * | 2017-12-21 | 2019-09-17 | Nanya Technology Corporation | Diode structure and electrostatic discharge protection device including the same |
US10622555B2 (en) * | 2018-07-31 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Film scheme to improve peeling in chalcogenide based PCRAM |
-
2007
- 2007-01-25 CN CNB2007100072480A patent/CN100573951C/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101232074A (en) | 2008-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7851253B2 (en) | Phase change memory device and fabricating method | |
CN101355137B (en) | Phase-changing storage device and manufacture method thereof | |
US7655941B2 (en) | Phase change memory device and method for fabricating the same | |
US7893420B2 (en) | Phase change memory with various grain sizes | |
US10153433B2 (en) | Methods of forming memory cells | |
TWI676269B (en) | Self-aligned 3d memory with confined cell and method of manufacturing integrated circuit | |
US7858961B2 (en) | Phase change memory devices and methods for fabricating the same | |
CN1627546A (en) | Field emission phase change diode memory | |
CN100573951C (en) | Phase change memory apparatus and manufacture method thereof | |
US11037992B2 (en) | Variable resistance memory device | |
US7989795B2 (en) | Phase change memory device and method for fabricating the same | |
CN101604728A (en) | Phase-change memorizer device and manufacture method thereof | |
US11665914B2 (en) | Three dimensional semiconductor memory devices | |
US10892410B2 (en) | Variable resistance memory devices and methods of manufacturing variable resistance memory devices | |
US20200027925A1 (en) | Variable resistance memory device including symmetrical memory cell arrangements and method of forming the same | |
CN112585758B (en) | Novel gap fill and cell structure for improved selector thermal reliability for 3D PCM | |
CN103441215B (en) | Phase change storage structure of sandwich type blade-like electrode and preparation method thereof | |
US20230301117A1 (en) | Memory device and method for manufacturing the same | |
CN101330092A (en) | Phase-changing storage device and manufacture method thereof | |
US11177320B2 (en) | Variable resistance memory device and method of fabricating the same | |
KR101115512B1 (en) | a Phase change memory device and a manufacturing method thereof | |
CN113594201A (en) | Phase change memory and manufacturing method thereof | |
CN104779349A (en) | Phase change memory cell and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: PROMOS TECHNOLOGIES INC. Free format text: FORMER OWNER: INDUSTRY-TECHNOLOGY RESEARCH INSTITUTE Effective date: 20100702 Free format text: FORMER OWNER: POWERCHIP SEMICONDUCTOR CORP. NAN YA TECHNOLOGY CORP. PROMOS TECHNOLOGIES INC. WINBOND ELECTRONICS CORPORATION |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: HSINCHU COUNTY, TAIWAN PROVINCE, CHINA TO: XINZHU SCIENCE INDUSTRIAL PARK, TAIWAN PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100702 Address after: Hsinchu Taiwan Science Industrial Park Patentee after: Maode Science and Technology Co., Ltd. Address before: Hsinchu County, Taiwan, China Co-patentee before: Powerchip Semiconductor Corp. Patentee before: Industrial Technology Research Institute Co-patentee before: Nanya Sci. & Tech. Co., Ltd. Co-patentee before: Maode Science and Technology Co., Ltd. Co-patentee before: Huabang Electronics Co., Ltd. |