CN100571033C - But switch Surface Acoustic Wave Filter group with two kinds of channel widths - Google Patents
But switch Surface Acoustic Wave Filter group with two kinds of channel widths Download PDFInfo
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- CN100571033C CN100571033C CNB2006101716476A CN200610171647A CN100571033C CN 100571033 C CN100571033 C CN 100571033C CN B2006101716476 A CNB2006101716476 A CN B2006101716476A CN 200610171647 A CN200610171647 A CN 200610171647A CN 100571033 C CN100571033 C CN 100571033C
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Abstract
But the present invention relates to a kind of switch Surface Acoustic Wave Filter group, comprise a cutter multithrow switch, controller and a plurality of Surface Acoustic Wave Filter with two kinds of channel widths; It is characterized in that described a plurality of Surface Acoustic Wave Filter are formed a narrow band channel and a broad-band channel at least; Described narrow band channel is made up of the Surface Acoustic Wave Filter of two cascades, and described two Surface Acoustic Wave Filter all adopt the single phase unidirectional transducer structure that is produced on the quartz; Described broad-band channel is made up of two of cascade different Surface Acoustic Wave Filter, and wherein the prime Surface Acoustic Wave Filter adopts vertical coupled resonance filter construction, and back level Surface Acoustic Wave Filter adopts the fan-filter structure.The present invention both can realize low insertion loss in narrow band channel, can realize lower squareness factor again; Realize simultaneously low insertion loss in broad-band channel, high stopband suppresses and hangs down squareness factor, and inserts loss and pass through with narrow band channel is approaching.
Description
Technical field
But the present invention relates to a kind of switch Surface Acoustic Wave Filter group, but particularly relate to a kind of low loss, high band inhibition switch Surface Acoustic Wave Filter group that is applied to have in the phased array radar receiver two kinds of channel widths.
Background technology
But the switch Surface Acoustic Wave Filter group that can realize programmable function is that frequency hopping communications and frequency-agile radar are needed: the one, and frequency-selecting in frequency synthesizer; The 2nd, in receiver, make anti-interference filtration.In the application of receiver, received signal is generally very weak, in order to guarantee the signal to noise ratio of system, requires bank of filters that lower insertion loss is arranged; In order to suppress strong interference signal, require single filter to have very narrow bandwidth, steep transition band and very high stopband to suppress.
But even do not have the switch Surface Acoustic Wave Filter group of two kinds of channel widths in the prior art.But a kind of 16 channel arrowbands active switch Surface Acoustic Wave Filter group that is used for the agile radar receiver front end is arranged in the prior art, but Fig. 1 is the theory diagram that this arrowband low loss, high band suppresses active switch Surface Acoustic Wave Filter group, it is made up of two groups of Surface Acoustic Wave Filter 3, four group of one cutter multithrow switch 2, amplifier 4 and controller 1, controller 1 will add four TTL signals and become 16 drive signals, control four groups of switches switch simultaneously simultaneously.The a certain moment has only one of them passage to be opened, and other passages are closed, and the power of input signal all is added on this passage, so there is not the loss of combinational network.Wherein, 42 ° of 45 ' rotary Y cuttings of substrate material employing of Surface Acoustic Wave Filter cut, X propagates (writing a Chinese character in simplified form ST-X or ST) quartz, each channel is made up of two identical Surface Acoustic Wave Filter, owing to adopted single phase unidirectional transducer (SPUDT) structure, the about 6dB of insertion loss of single filter; Adopt input, output biswitch battle array structure, the scheme that control circuit adopts the decoding band to drive, amplifier is placed between the dual stage filter group, has reduced bank of filters and has inserted loss to the input signal influence on signal-to-noise ratio (SNR); Individual channel 3dB relative bandwidth is 0.28～0.33%, squareness factor (60dB/3dB) is less than 3, about 1dB gains, deduct Amplifier Gain, be equivalent to insert the about 13.5dB of loss, the far-end stopband suppresses greater than 70dB (but arrowband low loss, high band suppresses active switch Surface Acoustic Wave Filter group, the patent No. 01142718.3).
Summary of the invention
But the objective of the invention is to propose a kind of switch passive sonic surface wave bank of filters that is applied in the phased array radar with two kinds of channel widths, low squareness factor, low Insertion Loss, the inhibition of high stopband.
For achieving the above object, but the switch Surface Acoustic Wave Filter group with two kinds of channel widths provided by the invention comprises a cutter multithrow switch, controller and a plurality of Surface Acoustic Wave Filter; It is characterized in that described a plurality of Surface Acoustic Wave Filter are formed a narrow band channel and a broad-band channel at least; Described narrow band channel is made up of the Surface Acoustic Wave Filter of two cascades, and described two Surface Acoustic Wave Filter all adopt the single phase unidirectional transducer structure that is produced on the quartz; Described broad-band channel is made up of two different Surface Acoustic Wave Filter of structure of cascade, and wherein the prime Surface Acoustic Wave Filter adopts vertical coupled resonance filter construction, and back level Surface Acoustic Wave Filter adopts the fan-filter structure; A described cutter multithrow switch has four groups, wherein two groups are connected with output correspondingly with the input of all prime Surface Acoustic Wave Filter respectively, and other two groups are connected with output correspondingly with the input of all back level Surface Acoustic Wave Filter respectively; Described controller produces one group of control signal and controls described four group of one cutter multithrow switch.
In the technique scheme, a described cutter multithrow switch is formed in parallel by an end of a plurality of monopole single throw switch, and a monopole single throw switch is made up of discrete component PIN diode circuit; A perhaps described cutter multithrow switch adopts integrated circuit to make.
In the technique scheme, the Surface Acoustic Wave Filter in the described narrow band channel, its piezoelectric substrate material adopts 42 ° of 45 ' rotary Y cuttings to cut, the quartz substrate that X propagates.
In the technique scheme, the Surface Acoustic Wave Filter in the described narrow band channel is made up of two interdigital transducers and the shielding strip between two interdigital transducers, and withdraw-weighted is all adopted in the weighting of described two interdigital transducers; Or an employing cuts the finger weighting, and another adopts withdraw-weighted; Or a not weighting, the finger weighting is cut in another employing; Or a not weighting, another adopts withdraw-weighted.
In the technique scheme, the Surface Acoustic Wave Filter in the described narrow band channel, the width of the reflecting electrode in its single phase unidirectional transducer structure is a quarter-wave, the ratio of the thickness of reflecting electrode and wavelength is between 1.2%～1.6%.
In the technique scheme, the prime Surface Acoustic Wave Filter in the described broad-band channel, its chip structure is the vertical coupled resonance filter construction of 1-3 pattern, or the vertical coupled resonance filter construction of 1-2 pattern; Or the two-stage cascade of above-mentioned two kinds of structures, three-stage cascade or level Four cascade.
In the technique scheme, the prime Surface Acoustic Wave Filter in the described broad-band channel, its piezoelectric substrate material is Y36 ° of LiTaO
3
In the technique scheme, back level Surface Acoustic Wave Filter in the described broad-band channel, withdraw-weighted is adopted in the weighting of the reflecting electrode in its fan-filter structure, and the width of reflecting electrode is a quarter-wave, and the ratio of the thickness of reflecting electrode and wavelength is between 1.4%～1.8%.
In the technique scheme, the back level Surface Acoustic Wave Filter in the described broad-band channel is made up of two transducers, and the weighting of described two interdigital transducers all is a withdraw-weighted; Or a not weighting, another withdraw-weighted.
In the technique scheme, the back level Surface Acoustic Wave Filter in the described broad-band channel, its piezoelectric substrate material is Y112 ° of LiTaO
3
Advantage of the present invention is significantly, because the narrow band channel Surface Acoustic Wave Filter adopts the single phase unidirectional transducer structure, both can realize low insertion loss, can realize lower squareness factor again; Adopt dual stage filter group cascade, realize that easily high stopband suppresses.One of broad-band channel Surface Acoustic Wave Filter adopts vertical coupled resonance filter construction, has realized low insertion loss; The another of broad-band channel Surface Acoustic Wave Filter adopts the fan-filter structure, has both realized low insertion loss, has realized the amplitude fluctuation in low squareness factor and the passband again; Adopt vertical coupled resonance filter and fan-filter cascade, the high stopband of having realized broad-band channel suppresses and hangs down squareness factor, and inserts loss and narrow band channel and pass through near (can by the realization of adjustment reflecting electrode thickness).Adopt input and output biswitch battle array structure, reduced the loss of combinational network.In an embodiment, it is about 1.8% that the relative bandwidth 0.28%～0.33% of Surface Acoustic Wave Filter group narrow band channel, broad-band channel get relative bandwidth, and stopband far away suppresses greater than 70dB.The narrow band channel Surface Acoustic Wave Filter adopts single phase unidirectional transducer (SPUDT) structure, inserts loss and reduces to 6dB; Vertical coupled resonance filter insertion loss 2dB of broad-band channel, fan-filter insert loss and are lower than 11dB.The loss of combinational network is by biswitch battle array structure, and promptly the structure of switch arrays+filter+switch arrays is overcome.
Description of drawings
But Fig. 1 is the theory diagram that prior art arrowband low loss, high band suppresses active switch Surface Acoustic Wave Filter group;
But Fig. 2 is the theory diagram that two kinds of channel width low loss, highs of the present invention band suppresses switch Surface Acoustic Wave Filter group;
Fig. 3 is the schematic diagram of a kind of embodiment of narrow band channel filter chip structure among the present invention;
Fig. 4 is the schematic diagram of the another kind of embodiment of narrow band channel filter chip structure among the present invention;
Fig. 5 is the schematic diagram of another embodiment of narrow band channel filter chip structure among the present invention;
Fig. 6 is the schematic diagram of another embodiment of narrow band channel filter chip structure among the present invention;
Fig. 7 is the frequency response curve of the single Surface Acoustic Wave Filter of embodiment of the invention narrow band channel;
Fig. 8 is the chip structure schematic diagram of longitudinal coupling resonator in the embodiment of the invention broad-band channel;
Fig. 9 is the frequency response curve of longitudinal coupling resonator in the embodiment of the invention broad-band channel;
Figure 10 is the chip structure schematic diagram of fan-filter in the embodiment of the invention broad-band channel;
Figure 11 is the frequency response curve of fan-filter in the embodiment of the invention broad-band channel;
But Figure 12 is the frequency response curve of embodiment of the invention switch Surface Acoustic Wave Filter group.
Accompanying drawing indicates:
1, controller 2, a cutter multithrow switch
3, Surface Acoustic Wave Filter 4, amplifier
5, piezoelectric substrate 6, cut the finger weighted transducer
7, withdrawal weighted transducer 8, reflecting electrode
9, weighted transducer 10, quarter-wave weighted transducer not
11, reflecting grating array 12, slanted transducer
13, slanted transducer reflecting electrode
Embodiment
The technical solution adopted in the present invention is that but it is made up of two-stage switch Surface Acoustic Wave Filter group and control circuit, the scheme that control circuit adopts the decoding band to drive; But switch Surface Acoustic Wave Filter group adopts the input, output biswitch structure (can be 97109489.6 Chinese patent referring to the patent No.: but switch Surface Acoustic Wave Filter group) of the applicant's invention, promptly one group of switch connects together the input of a plurality of Surface Acoustic Wave Filter, and another group connects together output; Four groups of switch arrays (dual stage filter group) are controlled by one group of control signal; Narrow band channel is made up of two identical Surface Acoustic Wave Filter, adopts the single phase unidirectional transducer structure, and substrate material adopts the ST quartz of good temp characteristic; Broad-band channel is made up of the Surface Acoustic Wave Filter of two different performances, and one is adopted Y36 ° of LiTaO
3On vertical coupled resonance Design of Filter scheme, one is adopted Y112 ° of LiTaO
3On the fan-filter design.
The present invention is further illustrated in conjunction with the accompanying drawings and embodiments now:
But Fig. 2 is two kinds of channel width low loss, highs of the present invention band suppresses the theory diagram of passive switch Surface Acoustic Wave Filter group, and it is made up of two groups of Surface Acoustic Wave Filter 3, four group of one cutter eight throw switch 2 and controller 1.Controller 1 will add three TTL signals and become 8 drive signals, control four groups of switches switch simultaneously, at a time have only one of them passage to be opened, other passages are closed, the power of input signal all is added on this passage, so there is not the loss of combinational network.In the present embodiment, a described cutter eight throw switches are formed in parallel by an end of eight one monopole single throw switch, and a monopole single throw switch is made up of discrete component PIN diode circuit, also can adopt integrated circuit to make.
In the present embodiment, the wave filter group comprises 8 channels, 6 narrow band channels wherein, 2 broad-band channel narrow band channels, described narrow band channel is made up of two of cascade identical Surface Acoustic Wave Filter, and this Surface Acoustic Wave Filter adopts the single phase unidirectional transducer structure that is produced on the ST quartz; Described broad-band channel is made up of two of cascade different Surface Acoustic Wave Filter, and wherein the prime Surface Acoustic Wave Filter adopts and is produced on Y36 ° of LiTaO
3On vertical coupled resonance filter construction, level Surface Acoustic Wave Filter in back adopts and is produced on Y112 ° of LiTaO
3On the fan-filter structure.
In the present embodiment, the filter chip of single phase unidirectional transducer structure as shown in Figure 3, this chip refers to that by cutting on the piezoelectric substrate 5 weighted transducer 6 and withdrawal weighted transducer 7 form.
In the present embodiment, the width of single phase unidirectional transducer reflecting electrode 8 is 1/4 wavelength, is spaced apart 3/16 wavelength between it and the adjacent transducing electrode, the width of other transducing electrodes and be 1/8 wavelength at interval.Because the introducing of reflecting electrode makes sound wave approx only towards the direction radiation of another transducer, has therefore reduced the insertion loss of filter.The intensity of reflected signal is controlled by the metal grizzly bar thickness that changes reflecting electrode, and its relative thickness (ratio of thickness and wavelength) can get 1.4% in the present embodiment between 1.2%～1.6%, the insertion loss of guide sound surface wave filter thus.
Fig. 7 is the amplitude-frequency response of embodiment among Fig. 6, and as can be seen from the figure, the insertion loss of narrow band channel Surface Acoustic Wave Filter is less than 6dB.
Fig. 8 is the chip structure schematic diagram of longitudinal coupling resonator embodiment in the broad-band channel among Fig. 2, in the present embodiment, weighted transducer 10 and reflecting grating array 11 are not formed transducer and reflecting grating array electrode width and be 1/4 wavelength at interval to chip by the quarter-wave on the piezoelectric substrate 5; Piezoelectric substrate 4 is Y36 ° of LiTaO
3
Fig. 9 is the amplitude-frequency response of embodiment among Fig. 8, as can be seen from the figure, and the about 2dB of insertion loss of longitudinal coupling resonator.
Figure 10 is the chip structure schematic diagram of fan-shaped transducer architecture filter embodiment in the broad-band channel among Fig. 2, in this embodiment, chip is by two slanted transducers 12 on the piezoelectric substrate 5, slanted transducer 12 is a single phase unidirectional transducer, the width of slanted transducer reflecting electrode 13 is 1/4 wavelength, be spaced apart 3/16 wavelength between it and the adjacent transducing electrode, the width of other transducing electrodes and be 1/8 wavelength at interval; Piezoelectric substrate 5 is Y112 ° of LiTaO
3The intensity of reflected signal is controlled by the thickness that changes reflecting electrode metal grizzly bar, and its relative thickness ratio of wavelength (thickness with) 1.4%～1.8% gets 1.5% in the present embodiment, thus the insertion loss of guide sound surface wave filter.
Figure 11 is the amplitude-frequency response of embodiment among Figure 10, and as can be seen from the figure, the insertion loss of slanted transducer Structure Filter is less than 11dB.
Figure 12 is the amplitude-frequency response of Fig. 2 embodiment.As seen from the figure, six narrow band channels, two broad-band channels are arranged; Narrow band channel 0.5dB bandwidth is greater than 0.3MHz, and the 60dB bandwidth is less than 3.3MHz; Broad-band channel 1dB bandwidth 3.6～4.1MHz, 60dB bandwidth 7.8～8.3MHz; Insert the about 13dB of loss, stopband far away suppresses greater than 70dB.
Present embodiment is compared with embodiment 1, and the structure of the single phase unidirectional transducer that adopts in its narrow band channel is different.In the present embodiment, the filter chip of single phase unidirectional transducer structure as shown in Figure 4, chip is made up of two withdrawal weighted transducers 7 on the piezoelectric substrate 5.
In the present embodiment, the reflecting electrode metal grizzly bar thickness of single phase unidirectional transducer Structure Filter is 1.2% with the ratio of wavelength in the narrow band channel.
In the present embodiment, the reflecting electrode thickness of fan-shaped transducer architecture filter is 1.4% with the ratio of wavelength in the broad-band channel.
Remainder in the present embodiment and embodiment 1 are in full accord.
Present embodiment is compared with embodiment 1, and the structure of the single phase unidirectional transducer that adopts in its narrow band channel is different.In the present embodiment, the filter chip of single phase unidirectional transducer structure as shown in Figure 5, in this embodiment, chip by cutting on the piezoelectric substrate 5 refer to weighted transducer 6 and not weighted transducer 9 form.
In the present embodiment, the reflecting electrode thickness of single phase unidirectional transducer Structure Filter is 1.6% with the ratio of wavelength in the narrow band channel.
In the present embodiment, the reflecting electrode thickness of fan-shaped transducer architecture filter is 1.8% with the ratio of wavelength in the broad-band channel.
Remainder in the present embodiment and embodiment 1 are in full accord.
Present embodiment is compared with embodiment 1, and the structure of the single phase unidirectional transducer that adopts in its narrow band channel is different.In the present embodiment, the filter chip of single phase unidirectional transducer structure as shown in Figure 6, in this embodiment, chip is made up of not weighted transducer 9 on the piezoelectric substrate 5 and withdrawal weighted transducer 7.
Remainder in the present embodiment and embodiment 1 are in full accord.
Claims (9)
1, but a kind of switch Surface Acoustic Wave Filter group with two kinds of channel widths comprises a cutter multithrow switch, controller and a plurality of Surface Acoustic Wave Filter; It is characterized in that described a plurality of Surface Acoustic Wave Filter are formed a narrow band channel and a broad-band channel at least; Described narrow band channel is made up of the Surface Acoustic Wave Filter of two cascades, and described two Surface Acoustic Wave Filter all adopt the single phase unidirectional transducer structure that is produced on the quartz; Described broad-band channel is made up of two different Surface Acoustic Wave Filter of structure of cascade, and wherein the prime Surface Acoustic Wave Filter adopts vertical coupled resonance filter construction, and back level Surface Acoustic Wave Filter adopts the fan-filter structure; A described cutter multithrow switch has four groups, wherein two groups are connected with output correspondingly with the input of all prime Surface Acoustic Wave Filter respectively, and other two groups are connected with output correspondingly with the input of all back level Surface Acoustic Wave Filter respectively; Described controller produces one group of control signal and controls described four group of one cutter multithrow switch; Back level Surface Acoustic Wave Filter in the described broad-band channel, withdraw-weighted is adopted in the weighting of the reflecting electrode in its fan-filter structure, and the width of reflecting electrode is a quarter-wave, and the ratio of the thickness of reflecting electrode and wavelength is between 1.4%～1.8%.
But 2, by the described switch Surface Acoustic Wave Filter group of claim 1 with two kinds of channel widths, it is characterized in that, a described cutter multithrow switch is formed in parallel by an end of a plurality of monopole single throw switch, and a monopole single throw switch is made up of discrete component PIN diode circuit; A perhaps described cutter multithrow switch adopts integrated circuit to make.
But 3,, it is characterized in that by the described switch Surface Acoustic Wave Filter group of claim 1 with two kinds of channel widths, the Surface Acoustic Wave Filter in the described narrow band channel, its piezoelectric substrate material adopts 42 ° of 45 ' rotary Y cuttings to cut, the quartz substrate that X propagates.
But 4, by the described switch Surface Acoustic Wave Filter group of claim 1 with two kinds of channel widths, it is characterized in that, Surface Acoustic Wave Filter in the described narrow band channel is made up of two interdigital transducers and the shielding strip between two interdigital transducers, and withdraw-weighted is all adopted in the weighting of described two interdigital transducers; Or an employing cuts the finger weighting, and another adopts withdraw-weighted; Or a not weighting, the finger weighting is cut in another employing; Or a not weighting, another adopts withdraw-weighted.
But 5, by the described switch Surface Acoustic Wave Filter group of claim 1 with two kinds of channel widths, it is characterized in that, Surface Acoustic Wave Filter in the described narrow band channel, the width of the reflecting electrode in its single phase unidirectional transducer structure is a quarter-wave, and the ratio of the thickness of reflecting electrode and wavelength is between 1.2%～1.6%.
But 6, by the described switch Surface Acoustic Wave Filter group of claim 1 with two kinds of channel widths, it is characterized in that, prime Surface Acoustic Wave Filter in the described broad-band channel, its chip structure is the vertical coupled resonance filter construction of 1-3 pattern, or the vertical coupled resonance filter construction of 1-2 pattern; Or the two-stage cascade of above-mentioned two kinds of structures, three-stage cascade or level Four cascade.
But 7,, it is characterized in that by the described switch Surface Acoustic Wave Filter group of claim 1 with two kinds of channel widths, the prime Surface Acoustic Wave Filter in the described broad-band channel, its piezoelectric substrate material is Y36 ° of LiTaO
3
But according to the described switch Surface Acoustic Wave Filter of claim 1 group, it is characterized in that 8, the back level Surface Acoustic Wave Filter in the described broad-band channel is made up of two interdigital transducers, the weighting of described two interdigital transducers all is a withdraw-weighted; Or a not weighting, another withdraw-weighted.
But 9,, it is characterized in that by the described switch Surface Acoustic Wave Filter group of claim 1 with two kinds of channel widths, the back level Surface Acoustic Wave Filter in the described broad-band channel, its piezoelectric substrate material is Y112 ° of LiTaO
3
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| CNB2006101716476A CN100571033C (en) | 2006-12-31 | 2006-12-31 | But switch Surface Acoustic Wave Filter group with two kinds of channel widths |
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| CNB2006101716476A CN100571033C (en) | 2006-12-31 | 2006-12-31 | But switch Surface Acoustic Wave Filter group with two kinds of channel widths |
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| CN101212210A CN101212210A (en) | 2008-07-02 |
| CN100571033C true CN100571033C (en) | 2009-12-16 |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101645701B (en) * | 2009-08-25 | 2011-07-27 | 中国科学院声学研究所 | Time delay estimation method based on filter bank and system thereof |
| CN101986563B (en) * | 2010-10-18 | 2013-08-28 | 华为技术有限公司 | Surface acoustic wave (SAW) filter and manufacturing method thereof |
| CN102565773A (en) * | 2010-12-30 | 2012-07-11 | 中国科学院电子学研究所 | Two-stage filter achieving method of high-speed data extraction of synthetic aperture radar |
| CN102571025B (en) * | 2012-01-20 | 2015-08-12 | 东华大学 | A kind of wavelet transformation device for small low-insertion-loss single-scaling surface acoustic wave |
| CN102571031B (en) * | 2012-01-21 | 2015-05-06 | 南通大学 | Broadband low-insertion-loss surface acoustic wave filter set for realizing wavelet transformation |
| CN103580644B (en) * | 2013-11-25 | 2017-02-08 | 宁夏索特科新型器件有限公司 | Multichannel surface acoustic wave filter |
| CN104320104A (en) * | 2014-10-25 | 2015-01-28 | 中国电子科技集团公司第二十六研究所 | Surface acoustic wave filter assembly shared by transmitting channel and receiving channel |
| CN104868875B (en) * | 2015-05-13 | 2017-10-24 | 熊猫电子集团有限公司 | A kind of ultrashort wave matrix form wave filter group |
| CN105162478B (en) * | 2015-07-16 | 2018-08-14 | 中国电子科技集团公司第四十一研究所 | A kind of short-wave receiver pre-selection filter circuit and method |
| DE102015218542A1 (en) * | 2015-09-28 | 2017-03-30 | Robert Bosch Gmbh | Integrated high-frequency circuit, radar sensor and operating method |
| CN106603034B (en) * | 2016-12-23 | 2023-06-16 | 无锡市好达电子股份有限公司 | Electrode transmission structure of surface acoustic wave resonator |
| CN107733393B (en) * | 2017-11-22 | 2021-04-23 | 中国科学院微电子研究所 | Phononic crystal surface acoustic wave filter and manufacturing method thereof |
| CN112422099A (en) * | 2020-11-25 | 2021-02-26 | 成都燎原星光电子有限责任公司 | Chip structure of broadband low-loss surface acoustic wave filter |
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| CN2619413Y (en) * | 2002-03-06 | 2004-06-02 | 中国科学院声学研究所 | Surface acoustic wave sector filter |
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| CN2619413Y (en) * | 2002-03-06 | 2004-06-02 | 中国科学院声学研究所 | Surface acoustic wave sector filter |
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| Low Loss and High Stopband Rejection Switchable SAWFilter Bank. shitang,He,Honglang,Li,et.2002 IEEE ULTRASONICS SYMPOSIUM. 2002 * |
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