CN100569993C - Protective membrane formation method and protection membrane formation device - Google Patents
Protective membrane formation method and protection membrane formation device Download PDFInfo
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- CN100569993C CN100569993C CNB200680001502XA CN200680001502A CN100569993C CN 100569993 C CN100569993 C CN 100569993C CN B200680001502X A CNB200680001502X A CN B200680001502XA CN 200680001502 A CN200680001502 A CN 200680001502A CN 100569993 C CN100569993 C CN 100569993C
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Abstract
The invention provides a kind of protection membrane formation device at the last formation of the inherent front glass substrate of deposited chamber (201) (11) magnesium oxide protective membrane, it comprises: the oxygen relief outlet (222) that imports oxygen to deposited chamber (201); Import the water vapour relief outlet (210) of water vapour to deposited chamber (201) from the downstream of front glass substrate (11) throughput direction; Measure the interior hydrogen ion intensity of deposited chamber (201) and the mass analyzer (224) of oxonium ion intensity; And the ionic strength that is measured to according to mass analyzer (224) is controlled the mass flow controller (221) of the importing flow of the mass flow controller (215) of importing flow of water vapour and control oxygen.
Description
Technical field
The present invention relates to be used on glass substrate, forming the protective membrane formation method and the protection membrane formation device of protective membrane; relate in particular to, be formed for protecting the method and apparatus of magnesium oxide (MgO) protective membrane of the dielectric layer that on the front glass substrate of Plasmia indicating panel, forms.
Background technology
Plasmia indicating panel (hereinafter referred to as PDP) receives much attention as big picture display device, is because compare with liquid crystal panel, and it can carry out high speed and show that easier realization is maximized.Highly become more meticulous towards improving, display quality such as high brightnessization and to improve the exploitation of reliability more and more.
Usually, AC drive surface discharge-type PDP adopts three-electrode structure, and these two glass substrates of front panel and backplate are configuration relatively with the interval of regulation.Front panel has following structure: by the bar shaped scan electrode that forms on the glass substrate and keep the show electrode that electrode constitutes; Cover this show electrode and the dielectric layer of the function of the electric capacity of accumulating electric charge is arranged; And, be protective membrane about 1 μ m at the thickness that forms on this dielectric layer.In addition, backplate has following structure: a plurality of site selection electrodes that form on glass substrate; Cover the base dielectric layer of this site selection electrodes; The barrier that on the base dielectric layer, forms; And, in the display unit that forms by each barrier, be coated with, send the luminescent coating of red, green, blue respectively.
Front panel and backplate gas-tight seal in the relative mode of its electrode forming surface side, in the discharge space that forms by barrier with the pressure sealing of 400Torr～600Torr the discharge gas of neon and xenon and so on.By on show electrode, applying signal of video signal voltage selectively, make discharge gas discharge, consequent ultraviolet ray exited luminescent coating of all kinds and send each coloured light of red, green, blue, thereby color display.
Protective membrane is to use the high material of the anti-sputter of bombardment by ions is formed, and sputter influence that its protection dielectric layer is not subjected to discharging and causes simultaneously, sends the function that secondary electron reduces the driving voltage that makes the discharge gas discharge thereby have from the protection face.Because these characteristics, use single crystal magnesium oxide (MgO) material, utilize the vacuum film formation technology and form protective membrane.
Yet,,, and change from the emission characteristic of the secondary electron on protective membrane surface so along with the time of lighting of PDP increases, the thickness of protective membrane diminishes because protective membrane is subjected to bombardment by ions.Therefore, can take place from apply the time lag (discharge delay) of voltage till discharge to show electrode, this is the reason of display frame flicker, and display quality is obviously descended.
The MgO protective membrane has different crystal according to manufacture method to be formed, and therefore, the display quality, life-span etc. that can produce discharge delay or PDP change.Fig. 6 is the figure that summary is represented existing protection membrane formation device.With Fig. 6 existing MgO protective membrane formation method is described below.Substrate 500 preheating in preheating chamber 501 of high strain-point glass and so on is transported to filming chamber 502 along arrow F direction.When being preheating to substrate 500 about 300 ℃ and entering into filming chamber 502, be exposed to the steam 503 of the MgO evaporation particle that flies out from the bottom, form the MgO films on substrate 500 surfaces.Shine on the MgO particle as the evaporating materials in the vapor deposition source 504 from the electron beam of Pierre Si (Pierce) formula electron beam gun 505, MgO is dissolved and evaporate, produce steam 503.Be provided with baffle plate 506 between substrate 500 and the vapor deposition source 504, make 503 desired location film forming of steam at substrate 500.
In the time of on electron beam shines as the MgO particle of evaporating materials, MgO decomposes, and Sauerstoffatom is escaped, so film forming MgO is the film that is in the not enough state of oxygen.Therefore, the ratio of components when making film forming imports oxygen as much as possible near stoichiometric ratio by oxygen cylinder 507 grades, and still, because the introduction method and the import volume of oxygen, bigger variation takes place the characteristic of MgO.
In recent years,, begin the requirement high rate discharge, how to reduce because the discharge delay that the composition of MgO causes just becomes important topic along with the height of PDP becomes more meticulous.Corresponding to this problem, the spy opens the 2003-297237 communique and has disclosed the example that improves discharge delay by the input angle of evaporation particle.In addition, the spy opens the 2004-031264 communique and has disclosed the example that improves discharge delay by interpolation Ge or Si in evaporating materials MgO.Moreover, open the spy and to have disclosed such example in the 2002-33053 communique: comprising in the atmosphere of hydrogen of excitation or ionized state and heat-treating, forming the MgO film simultaneously, like this, can fully guarantee anti-sputter, and shorten discharge delay.
Yet, recently, to display unit require highlyer to become more meticulous, high quality more, therefore, must carry out the high speed address discharge in the PDP discharge.Black spot defect or the such quality problem of displaying of the defective that do not work when discharge delay takes place, can take place in the real-time addressing discharge corresponding to such.In addition, when making the addressing time elongated, keep to shorten discharge time, occur the problem that brightness decline or GTG descend inevitably for fear of discharge delay.Particularly, in order to realize that high-definition image shows that it is very important that discharge delay is remained irreducible minimum.
Summary of the invention
Protective membrane formation method of the present invention; be in filming chamber conveying substrate, form the protective membrane formation method of magnesium oxide protective membrane simultaneously; it is characterized in that; import oxygen to filming chamber; downstream from the substrate throughput direction imports water vapour in filming chamber simultaneously; measure the hydrogen ion intensity and the oxonium ion intensity of filming chamber, control the importing flow of water vapour and the importing flow of oxygen according to the ratio of hydrogen ion intensity and oxonium ion intensity.
According to such protective membrane formation method, can make the less protective membrane of discharge delay, even can realize the also very high PDP of display quality in the pictorial display of high definition.
Description of drawings
Fig. 1 is the stereographic map of the summary structure of expression PDP.
Fig. 2 is the figure of the structure of the protection membrane formation device in the expression embodiment of the present invention.
Fig. 3 A is the stereographic map of the configuring condition of the water vapour relief outlet of the protection membrane formation device of expression in the embodiment of the present invention and front glass substrate.
Fig. 3 B is the side-view of the configuring condition of the water vapour relief outlet of the protection membrane formation device of expression in the embodiment of the present invention and front glass substrate.
Fig. 4 represents protective membrane formation method in the embodiment of the present invention and the figure that protects measurement result protective membrane, discharge delay time of membrane formation device made.
Fig. 5 is the substrate of protective membrane formation method in the expression embodiment of the present invention and the protective membrane of protecting the membrane formation device made and the figure of distance between the water vapour relief outlet and the relation between the discharge delay time.
Fig. 6 is the figure of the summary of the existing protection membrane formation device of expression.
Description of reference numerals
11 front glass substrates, 12 show electrodes
13 secret notes, 14 dielectric layers
15 protective membranes, 20 backplates
21 back side glass substrates, 22 site selection electrodes
23 base dielectric layers, 24 barrier
25 luminescent coatings, 30 discharge spaces
200 preheating chambers, 201 deposited chambers (filming chamber)
202 annealing chamber
203,204 push-pull valves (gate valve)
205 vapor deposition source (film deposition source) 206MgO steam
207 Pierre's Si formula electron beam gun, 208 electron beams
209 baffle plates, 210 water vapour relief outlets
211 vent pipes, 212 holes
213 pure water, 214 containers
215,221 mass flow controllers
216 thermostatic baths, 217 salt solution
218 temperature sensors, 219 control device
220 oxygen cylinders, 222 oxygen relief outlets
223 turbo-pumps, 224 mass analyzers
225 assay plate, 226 computers
230 water vapour, 240 water vapour pipe arrangements
Embodiment
Below, embodiment of the present invention is described with reference to the accompanying drawings.
(embodiment)
The structure of the PDP that protective membrane was suitable for that uses protective membrane formation method of the present invention and the manufacturing of protection membrane formation device at first, is described.Fig. 1 is the stereographic map of the summary structure of expression PDP.As shown in Figure 1, PDP1 has mutually the front panel 10 and the backplate 20 of configuration relatively.The structure of front panel 10 is: form on the glass substrate 11 in front by many to bar shaped scan electrode 12a and keep the show electrode 12 that electrode 12b constitutes.In addition, form secret note 13 between the show electrode 12.And then at scan electrode 12a, keep on electrode 12b and the secret note 13 and to form dielectric layer 14, what also further form dielectric layer 14 is the protective membrane 15 of material with MgO.
In addition, backplate 20, configuration bar shaped site selection electrodes 22 on the glass substrate 21 overleaf, it is with scan electrode 12a and to keep electrode 12b vertical.Base dielectric layer 23 is to form in the mode that covers site selection electrodes 22, and it has protection site selection electrodes 22, and the function that visible light is reflexed to front panel 10.And, on base dielectric layer 23, with site selection electrodes 22 equidirectionals on form the barrier 24 clip site selection electrodes 22, form luminescent coating 25 24 of barriers.
Have among the PDP1 of this spline structure, scan electrode 12a and keep between the electrode 12b and apply pulsed voltage makes the discharge gas discharge thus and produces ultraviolet ray in discharge space 30, and uviolizing is to luminescent coating 25.Thus, from luminescent coating 25 radiation visible lights of all kinds, carry out coloured image through the surface of front panel 10 and show.
Fig. 2 is the figure of structure of the protection membrane formation device of expression embodiment of the present invention.The protection membrane formation device is made of substrate conveyance system and deposition system.The structure of substrate conveyance system is, along the arrow A direction to the formation of the front panel 10 of PDP1 the glass substrate of dielectric layer 14, that is, front glass substrate 11 is carried, and makes it by preheating chamber 200, the deposited chamber 201 as filming chamber, annealing chamber 202.In addition, preheating chamber 200, deposited chamber 201, annealing chamber 202 inside keep vacuum, utilize the Push And Release of push-pull valve 203,204, front glass substrate 11 can be transported to each chamber.
Be transported on the front glass substrate 11 of deposited chamber 201; the MgO steam 206 that the vapor deposition source 205 as film deposition source that utilization is provided with from the bottom as the deposited chamber 201 of deposition system is evaporated forms the MgO film as protective membrane 15 on dielectric layer 14.This MgO steam 206 is by the electron beam 208 from Pierre's Si formula electron beam gun 207 is shone on the MgO crystal grain that is configured on the vapor deposition source 205, makes it to heat, gasifying obtains.Be provided with baffle plate 209 between vapor deposition source 205 and the front glass substrate 11, restriction MgO steam 206 forms the MgO film in the regulation zone with glass substrate 11 in front.In addition, utilize baffle plate 209 controlling the incident angle of steam simultaneously from vapor deposition source 205 to front glass substrate 11.
In the embodiment of the present invention, be provided with the water vapour introduction part that is used for importing water vapour in deposited chamber 201 between baffle plate 209 and the front glass substrate 11 just carried, promptly the water vapour relief outlet 210.Fig. 3 A and Fig. 3 B are the figure of the configuring condition of expression water vapour relief outlet 210 and front glass substrate 11, and Fig. 3 A is that stereographic map, Fig. 3 B are side-views.
As shown in Figure 3A, water vapour relief outlet 210 be arranged on be connected on the water vapor generation device and the vent pipe 211 of vent water vapor on a plurality of holes 212, these holes 212 and the arrangement of front glass substrate 11 almost parallel ground.Shown in Fig. 3 B; front glass substrate 11 is transferred along throughput direction B; simultaneously; 212 water vapour that blow out 230 are from the downstream side of the throughput direction B of front glass substrate 11 from the hole; with the direction opposite with throughput direction; face along the formation protective membrane of front glass substrate 11 imports in the deposited chamber 201 by the arrow C direction.In addition, shown in Fig. 3 B, the face distance D of the formation protective membrane of water vapour relief outlet 210 and front glass substrate 11 is to deposited chamber 201 inner openings.Shown in Fig. 3 A and Fig. 3 B, by a plurality of holes 212 are set, and 212 go out water vapour 230 along front glass substrate 11 top blasts from the hole, water vapour 230 evenly and is in large area affacted on the front glass substrate 11.
On the other hand, as shown in Figure 2, water vapour 230 produces by container 214, this container 214 is as one of component parts of water vapour introduction part, be the water vapor generation device that has sealed pure water 213, the importing flow of water vapour 230 is controlled by the mass flow controller 215 that imports flow control portion as water vapour.The circulating brine 217 of container 214 origin self-constant temperature grooves 216 carries out temperature control.In addition, the temperature information of temperature sensor 218 is sent to control device 219, thereby the temperature of controlling this salt solution 217 is a prescribed value.The temperature that keeps pure water 213 to be keeping water vapor pressure, so the control of mass flow controller 215 can be stablized and carried out.
In addition, provide oxygen from oxygen cylinder 220 as one of component parts of oxygen introduction part, simultaneously, control it by the mass flow controller 221 that imports flow control portion as oxygen and import flow, oxygen is imported in the deposited chamber 201 from oxygen relief outlet 222 as one of component parts of oxygen introduction part.
In addition, component parts as the water vapour introduction part, water vapor generation device is container 214 to import flow control portion be that mass flow controller 215 is positioned at deposited chamber 201 outsides with being used to control water vapour that water vapour imports flow, and is configured in the downstream side of the throughput direction of front glass substrate 11.In the embodiment of the present invention, control the generation of water vapour by salt solution 217 temperature, the water vapour of generation is delivered to water vapour relief outlet 210 by water vapour pipe arrangement 240.Therefore, be necessary to control the temperature of water vapour pipe arrangement 240 from container 214 to water vapour relief outlet 210.In the embodiment of the present invention, as shown in Figure 2, water vapour relief outlet 210 from the downstream side of the throughput direction of front glass substrate 11 towards upstream side drainage water steam.So, because container 214 and mass flow controller 215 are positioned at deposited chamber 201 outsides, be configured in the downstream side of the throughput direction of front glass substrate 11, provide the length of the water vapour of water vapour pipe arrangement 240 short as far as possible so can be used in, heat insulation and the heating of water vapour pipe arrangement 240 also is easy to, and the supply of water vapour also can be more stable.
According to by oxonium ion intensity turbo-pump 223 differential dischargings, that send from the mass analyzer 224 as the ionic strength determination part and the ratio of hydrogen ion intensity, the oxygen of control deposited chamber 201 imports flow and water vapour imports flow.Particularly, the signal that sends from mass analyzer 224 carries out the A/D conversion by assay plate 225, sends to computer 226, and computer 226 transmits control signal to mass flow controller 215,221 based on this information, imports flow to control each.
At this, mass analyzer 224 is the parts that are used to measure as the ionic strength in the deposited chamber 201 of filming chamber, preferably is arranged on as near the vapor deposition source 205 of film deposition source.
This be because, for MgO steam 206 influence of what degree is arranged by monitor hydrogen ionic strength and oxonium ion intensity by vapor deposition source 205 evaporations, can grasp the influence membranous at an easy rate to protective membrane.
Among the PDP of existing VGA type, the time of address discharge cost is about 2 μ s～3 μ s.Therefore, be protective membrane about 500ns～600ns for existing discharge delay time τ s, if adding that discharge forms postpones τ f, total discharge delay is 1.5 μ s～2 μ s, is in the addressing time range.In addition, if having the high definition PDP of the number of scanning lines of VGA more than 2 times, require discharge delay τ s below 300ns.
Fig. 4 is the figure of measurement result of the discharge delay time τ s of the expression protective membrane that utilizes the protective membrane method of formationing of embodiment of the present invention and protection membrane formation device making.Among Fig. 4, hydrogen (H2) ionic strength during with the making protective membrane and the ratio of oxygen (O2) ionic strength are made as transverse axis, will use the discharge delay time Ts of the PDP of this protective membrane to be made as the longitudinal axis.In addition, the allocation position with water vapour relief outlet 210 is that parameter is represented.
As shown in Figure 4, as can be seen, discharge delay time τ s is along with bigger variation takes place with the ratio of oxonium ion intensity the hydrogen ion intensity in the deposited chamber 201.Particularly, in the downstream side of the throughput direction that water vapour relief outlet 210 is located at front glass substrate 11 and with the distance of front glass substrate 11 be under the situation of 30mm, when hydrogen ion intensity/oxonium ion intensity is 50% when above, discharge delay time τ s can be for below the 300ns.On the other hand, even the distance between front glass substrate 11 and the water vapour relief outlet 210 is 30mm, but import under the situation of water vapour at upstream side from the throughput direction of front glass substrate 11, less with the minimizing of the corresponding discharge delay time τ of the ratio s of hydrogen ion intensity/oxonium ion intensity.In addition, as can be seen, under the situation that the distance between glass substrate 11 and the water vapour relief outlet 210 is bigger, there is not cognation between the ratio of hydrogen ion intensity/oxonium ion intensity and the discharge delay time τ s in front.
In addition, Fig. 5 is that expression imports the distance under the situation of water vapour 230, between substrate and the water vapour relief outlet 210 and the figure of the relation between the discharge delay time τ s from the downstream side of front glass substrate 11 throughput directions, is the result who measures when the ratio of hydrogen ion intensity/oxonium ion intensity is 75%.As shown in Figure 5, be 75% o'clock at the ratio of hydrogen ion intensity/oxonium ion intensity, be below the 50mm as long as make the distance D between front glass substrate 11 and the water vapour relief outlet 210, be below the 300ns just can make discharge delay time τ s.
As described above; by making distance D between substrate and the water vapour relief outlet below 50mm; and control water vapour imports flow and oxygen imports flow; make that the ratio of hydrogen ion intensity/oxonium ion intensity is more than 75%; like this; realization can make discharge delay time τ s below 300ns, even also can be carried out the protective membrane that is used for PDP than the pictorial display of high display quality in the pictorial display of high definition.
In addition, under the situation of distance D between substrate and the water vapour relief outlet at 30mm, import flow and oxygen imports flow by control water vapour, make the ratio of hydrogen ion intensity/oxonium ion intensity, can make discharge delay time τ s below 300ns more than 50%.
For producing different-effect, can consider as follows owing to the position of the relative substrate of water vapour relief outlet and the position of relative throughput direction.
At first, be positioned near the substrate and, be equivalent to just form the moment as the magnesium oxide films of protective membrane material in the moment in the downstream side of substrate throughput direction.At this moment, be in very strong active condition as the magnesium oxide of protective layer, Sauerstoffatom or magnesium atom play pendulum, and have a plurality of defective part.And, because the protective layer section is a columnar structure,, also be present in the interface between this column so these a plurality of defective part do not exist only in the outmost surface of protective layer.
Therefore, when the water vapour relief outlet was arranged on this position, the ratio that can blow out hydrogen ion intensity/oxonium ion intensity was at water vapour more than 50%, that hydrogen ion intensity is bigger.Thus, not only there is oxygen to also have hydrogen or water vapour to enter aforementioned disadvantages portion, makes protective layer stable.The protective layer structure that Here it is reduces discharge delay time τ s.
In addition, the distance between substrate and water vapour relief outlet is bigger, and perhaps the water vapour relief outlet is positioned under the situation of upstream side of throughput direction, above-mentioned phenomenon can not take place, and can't form the protective layer structure that discharge delay time τ s is reduced.
In addition; in the present embodiment; import pipe arrangement perpendicular to throughput direction ground configuration water vapour; and on this pipe arrangement, be provided with a plurality of water vapour relief outlets; but be not limited thereto; so long as the protective layer after film forming provides the structure of water vapour, have nothing to do with pipe arrangement number, water vapour relief outlet number, can both obtain effect of the present invention.
Moreover, in the present embodiment, only in the downstream side of substrate throughput direction configuration water vapour introduction part, but be not limited thereto, for example, by at the upstream side of substrate throughput direction or other water vapour introduction part is set with being parallel to the substrate throughput direction, can strengthen effect of the present invention.
In addition, in the present embodiment, explanation be to use the evaporation coating method of electron beam as magnesian film deposition system, but be not limited thereto, for the sputtering method that uses RF or DC or the evaporation coating method that uses plasma gun too, when being used for present embodiment, also can obtain effect of the present invention.
As mentioned above; according to protective membrane formation method in the embodiment of the present invention and protection membrane formation device; can realize significantly reducing the protective membrane of the delay of discharge time, so even in the high meticulous pictorial display of high definition and so on, also can obtain not having the high quality graphic of defective.In addition, can shorten discharge delay time, also can improve the emittance of the secondary electron of protective membrane simultaneously, reduce sputtering raste, therefore can prolong the PDP life-span, also can improve power consumption by reducing discharge ionization voltage.
Industrial applicibility
As mentioned above, according to diaphragm formation method of the present invention and protection membrane formation device, can be real Now as high-quality, the long-life diaphragm of PDP with diaphragm, can be used for big picture disply dress The manufacture method of putting and manufacturing installation.
Claims (10)
1. protective membrane formation method, it be in filming chamber conveying substrate, form the protective membrane formation method of magnesium oxide protective membrane simultaneously, it is characterized in that, comprising:
Import oxygen to described filming chamber, the downstream from described substrate throughput direction imports water vapour to described filming chamber simultaneously;
Measure the hydrogen ion intensity and the oxonium ion intensity of described filming chamber;
Control the importing flow of described water vapour and the importing flow of described oxygen according to the ratio of described hydrogen ion intensity and described oxonium ion intensity.
2. protective membrane formation method according to claim 1 is characterized in that,
Described water vapour is along the face of the formation protective membrane of described substrate and import in the described filming chamber.
3. protective membrane formation method according to claim 1 is characterized in that,
Described water vapour is directed to the face 50mm of formation protective membrane of the described substrate of distance with in the interior described filming chamber.
4. protective membrane formation method according to claim 1 is characterized in that,
In described filming chamber, dispose film deposition source, and mensuration is positioned near described hydrogen ion intensity and the described oxonium ion intensity that has disposed described film deposition source.
5. protective membrane formation method according to claim 1 is characterized in that,
Control the importing flow of described oxygen and the importing flow of described water vapour, make that the ratio of described hydrogen ion intensity and described oxonium ion intensity is more than 50%.
6. protect membrane formation device for one kind, it is the protection membrane formation device that forms the magnesium oxide protective membrane in filming chamber on substrate, it is characterized in that, comprising:
Delivery section, it is used for carrying described substrate when forming described protective membrane;
The oxygen introduction part, it is used for importing oxygen to described filming chamber;
The water vapour introduction part, it is used for importing water vapour from the downstream of the direction of carrying described substrate to described filming chamber;
The ionic strength determination part, it is used to measure hydrogen ion intensity and oxonium ion intensity in the described filming chamber; And,
Water vapour imports flow control portion and oxygen imports flow control portion, and it controls the importing flow of described water vapour and the importing flow of described oxygen according to the ionic strength that described ionic strength determination part is measured.
7. protection membrane formation device according to claim 6 is characterized in that,
Described water vapour introduction part has the water vapour relief outlet at described filming chamber opening, the side vent water vapor upstream from the downstream side of the throughput direction of described substrate.
8. protection membrane formation device according to claim 6 is characterized in that,
Described water vapour introduction part has the water vapour relief outlet at described filming chamber opening, and described water vapour relief outlet is arranged on the face 50mm of the described protective membrane of formation of the described substrate of distance with interior position.
9. protection membrane formation device according to claim 6 is characterized in that,
The film deposition source that in described filming chamber, possesses described protective membrane, the ionic strength determination part that is used to measure described hydrogen ion intensity and oxonium ion intensity be positioned at described film deposition source near.
10. protection membrane formation device according to claim 6 is characterized in that,
The downstream side of the throughput direction of the described substrate outside described filming chamber has disposed the water vapour importing flow control portion that produces the water vapor generation device of water vapour and be used to control the importing flow of water vapour, as the integrant of described water vapour introduction part.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP264978/2005 | 2005-09-13 | ||
| JP2005264978 | 2005-09-13 | ||
| JP230061/2006 | 2006-08-28 |
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|---|---|
| CN101090991A CN101090991A (en) | 2007-12-19 |
| CN100569993C true CN100569993C (en) | 2009-12-16 |
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| CNB200680001502XA Expired - Fee Related CN100569993C (en) | 2005-09-13 | 2006-09-11 | Protective membrane formation method and protection membrane formation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102268644A (en) * | 2011-06-21 | 2011-12-07 | 四川虹欧显示器件有限公司 | Preparation method of MgO medium protective film, display screen and plasma television set |
| CN106951001A (en) * | 2017-05-12 | 2017-07-14 | 成都市惠家胶粘制品有限公司 | One kind manufacture diaphragm stability of flow system |
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