CN100565893C

CN100565893C - Identical/symmetrical metallic shield

Info

Publication number: CN100565893C
Application number: CNB2006800192611A
Authority: CN
Inventors: R·D·麦格拉思; R·M·圭达什; T·J·肯尼
Original assignee: Eastman Kodak Co
Priority date: 2005-06-01
Filing date: 2006-05-31
Publication date: 2009-12-02
Anticipated expiration: 2026-05-31
Also published as: CN101189723A

Abstract

A kind of imageing sensor comprises the elementary cell with a plurality of pixels; Described elementary cell comprises: a plurality of photodetectors, have two or more subclass, and wherein each subclass all has the physical form that is different from another subclass; And light shield layer, produce the hole that is associated with each photodetector; Wherein light shield layer is positioned such that light shield layer all produces the variation that equates basically with respect to any physical translation of photodetector in the photoresponse of photodetector.

Description

Identical/symmetrical metallic shield

Technical field

The present invention relates generally to field of image sensors, more specifically, relates to a kind of imageing sensor, and in described imageing sensor, the misalignment of light shield does not change the size in hole.

Background technology

With reference to figure 1, show have photodiode 20, circuit 30 and isolate 40 and the pixel 10 of the prior art of interconnection layer 50.Need interconnection layer to connect photodiode 20 and circuit 30 and pixel 10 is connected in the pel array 70.(by

layer

50a, 50b and do not have the border of the photodiode 20 that tegillum 50b covers to limit) sets by the aligning of photodiode 20 and interconnection layer 50 in the hole.Photodiode 20 causes the hole to change size with respect to the misalignment meeting of interconnection layer 50, and this has influenced pixel performance.

With reference to figure 2, show pixel supercell (supercell) 80 by the prior art of forming such as a plurality of pixels 10 of the first pixel 10a and the second pixel 10b, wherein each pixel 10 comprises photodiode 20.Pixel 10 in the pixel supercell 80 is being shared circuit 30 and isolation 40 and interconnection layer 50.Suppose the layout that the layout that makes first pixel can be different from second pixel of sharing owing to parts, photodiode 20 causes the size change of hole (by

layer

50a, 50b and do not have the border of the photodiode 20 that tegillum 50 covers to limit) between the first pixel 10a and the second pixel 10b inequality with respect to the misalignment meeting of interconnection layer 50, and this has influenced pixel performance.This will expand to the pixel supercell 80 that comprises two above pixels 10 naturally.

With reference to figure 3, show the base pixel 10 of prior art, wherein by on the 3rd interconnection layer 50c, setting up the variation that hole 90 is eliminated in hole 90.This layer 50c is the top layer such as any other interconnection layer of the first interconnection layer 50a or the second interconnection layer 50b, and this is because it must connect in seamless unoccupied place on both direction.It has also produced the hole 90 of minimum dimension, and this is because it must produce hole 90 than the Kong Gengxiao that otherwise produces, because it must be a control hole.

Therefore, just exist the demand of coupling photoresponse in whole designing for manufacturing tolerance limit.

Summary of the invention

The present invention is intended to overcome one or more in the problems referred to above.Generally, according to an aspect of the present invention, the invention reside in a kind of imageing sensor, comprise the imageing sensor of elementary cell (unit cell) with a plurality of pixels; Described elementary cell comprises: (a) a plurality of photodetectors, have two or more subclass, and wherein each subclass all has the physical form that is different from another subclass; (b) light shield layer produces the hole that is associated with each photodetector; Wherein light shield layer is positioned such that light shield layer all produces the variation that equates basically with respect to any physical translation of photodetector in the photoresponse of photodetector.

With reference to the accompanying drawings, by reading following detailed description of preferred embodiment and the claim of enclosing will more be expressly understood and be familiar with these and other aspect of the present invention, purpose, feature and advantage.

Beneficial effect of the present invention

Advantage of the present invention is: can not change hole size because of the misalignment of light shield layer.

Description of drawings

Fig. 1 is the top view of prior art imageing sensor;

Fig. 2 is the top view of another prior art imageing sensor;

Fig. 3 is the top view of another prior art imageing sensor;

Fig. 4 is the top view of imageing sensor of the present invention;

Fig. 5 is the top view of the interchangeable embodiment of imageing sensor of the present invention;

Fig. 6 is the top view of the second interchangeable embodiment of imageing sensor of the present invention;

Fig. 7 is the top view of the 3rd interchangeable embodiment of imageing sensor of the present invention;

Fig. 8 is the top view of the 4th interchangeable embodiment of imageing sensor of the present invention;

Fig. 9 is the top view of the 5th interchangeable embodiment of imageing sensor of the present invention;

Figure 10 is the digital camera that is used to illustrate the typical commercial embodiment of imageing sensor of the present invention.

Embodiment

With reference to figure 4, show two photodiodes 100 of imageing sensor 110 of the present invention.Each photodiode 100 is assembled electric charge in response to light.Photodiode 100 is configured as identical or basic identical.Have the first interconnection layer 120a and the second interconnection layer 120b, both are combined to form light shield.What have directive significance is, notices that preferably the use of the first interconnection layer 120a and the second interconnection layer 120b not only is light shield.For example, they can be with interconnection, so that biasing or control clock to be provided; The device that reads signal from pixel 130 is provided; Or provide local interlinkage in pixel 130 or the pixel supercell (being defined as wherein having the element of shape inequality but two or more pixels that on imageing sensor 110, have repeat patterns), wherein pixel supercell is not shown in Figure 4, and shown in Fig. 5,7 and 9.The first interconnection layer 120a is at a direction limiting hole, the second interconnection layer 120b be positioned such that it with the direction of the first interconnection layer quadrature on limiting hole.In this embodiment, the size in hole relative to each other or with respect to the aligning of other layers (comprising any layer that limits photodiode 100) does not change with the first interconnection layer 120a and the second interconnection layer 120b.In other words, light shield layer is positioned such that light shield layer all produces the variation that equates basically with respect to any physical translation of photodiode 100 in the photoresponse of photodiode 100.

Still, show isolation 105 and circuit 115 with reference to figure 4.Isolate 105 photodiode 100 and circuit 115 are isolated from each other, circuit 115 provides and the resetting and read function associated of photodiode 100.

With reference to figure 5, show the interchangeable embodiment of Fig. 4.In this embodiment, superlattice 140 are made up of pixel 130a that comprises photodiode 100 and 130b.What have directive significance is to notice that photodiode 100 is mirror images (or being essentially mirror image) each other.Though the photodiode 100 that illustrates becomes mirror image along the y axle, photodiode 100 can become mirror image in either direction.The first interconnection layer 120a and the second interconnection layer 120b are identical with those layers among Fig. 4.In this embodiment, the size of hole (by

layer

120a, 120b and do not have tegillum 120a and the border of the photodiode 100 that 120b covers limits) relative to each other or with respect to the aligning of other layers (comprising any layer that limits photodiode 100) does not change with the first interconnection layer 120a and the second interconnection layer 120b.

With reference to figure 6, show the second interchangeable embodiment.Photodiode 100 and the first interconnection layer 120a and the second interconnection layer 120b are identical with those layers among Fig. 5, except the length of the second interconnection layer 120b on the y direction shorter.What have directive significance is to notice that the hole is limited by the first interconnection layer 120a and photodiode 100.

With reference to figure 7, show the 3rd interchangeable embodiment.This embodiment is identical with embodiment among Fig. 6, except photodiode 100 is (or being essentially mirror image) that is mirror image each other along the y axle.Become mirror image though show photodiode 100 along the y axle, photodiode 100 can become mirror image along either direction.What have directive significance is to notice that hole wherein is defined as identical with the hole among Fig. 6.

With reference to figure 8, show the 4th interchangeable embodiment.In this embodiment, have other hardware 150, described other hardware is positioned on the second interconnection layer 120b physically.Described other hardware 150 provides any function except that a part that forms the hole.With similar before, the first interconnection layer 120a is limiting hole in one direction, and the second interconnection layer 120b limits this hole on orthogonal direction.Similar with other embodiment of the present invention, the size in hole relative to each other or with respect to the aligning of other layers (comprising any layer that limits photodiode 100) does not change with the first interconnection layer 120a and the second interconnection layer 120b.

With reference to figure 9, show the 5th interchangeable embodiment, it is identical with the embodiment of Fig. 8, except photodiode 100 is to be mirror image (or being essentially mirror image) each other along the y axle.

With reference to Figure 10, show the digital camera 160 that wherein has imageing sensor 110 of the present invention, to be used to illustrate typical commercial embodiment.

At last, for clarity sake, should be noted that speech used herein " subclass " comprises one or more photodetectors.

List of parts

10 prior art pixels

10a first pixel

10b second pixel

20 photodiodes

30 circuit

40 separation layers

50 interconnection layers

The 50a interconnection layer

The 50b interconnection layer

The 50c interconnection layer

70 pel arrays

80 prior art pixel supercell

90 holes

100 diodes

105 isolate

110 imageing sensors

115 circuit

120a first interconnection layer

120b second interconnection layer

130 pixels

The 130a pixel

The 130b pixel

140 pixel supercell

150 other hardwares

160 digital cameras

Claims

1. imageing sensor comprises:

Super pixel lattice with a plurality of pixels; Described super pixel lattice comprises:

(a) a plurality of pixels, each pixel comprises a photodetector, and wherein pixel is divided into two or more subclass, and the photodetector in the wherein given subclass has the physical form that is different from the photodetector in another subclass; And

(b) light shield layer produces the hole that is associated with each photodetector; Wherein light shield layer is positioned such that light shield layer all produces the variation that equates basically along x axle and y axle with respect to any physical translation of photodetector in the photoresponse of photodetector.

2. imageing sensor according to claim 1, wherein each subclass all has physical form, and described physical form is the mirror image of another subclass.

3. imageing sensor according to claim 1, wherein light shield layer is made up of polysilicon or interconnecting metal.

4. imageing sensor according to claim 1, the specific physical region in wherein one or more described light shield layers is arranged individually to form the hole in conjunction with other light shield layers.

5. imageing sensor according to claim 1, wherein the one or more quilts in the light shield layer are arranged individually to form the hole.

6. imageing sensor according to claim 1, wherein subclass includes the photodetector of equal amount.

7. camera comprises:

Imageing sensor, described imageing sensor comprises:

(a) a plurality of pixels, each pixel comprises a photodetector, and wherein pixel is divided into two or more subclass, and wherein the photodetector of concentrating at a son has the physical form that is different from the photodetector in another subclass; And

8. imageing sensor comprises:

(a) a plurality of pixels, each pixel comprises a photodetector; And

(b) two or more different light shield layers, the hole that combines and be associated with each photodetector to produce; Wherein these two or more light shield layers are positioned such that light shield layer all produces the variation that equates basically with respect to any physical translation of photodetector in the photoresponse of photodetector.