CN100555698C - A kind of metal multiple layer film hall device and preparation method thereof - Google Patents

A kind of metal multiple layer film hall device and preparation method thereof Download PDF

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CN100555698C
CN100555698C CNB2006101440536A CN200610144053A CN100555698C CN 100555698 C CN100555698 C CN 100555698C CN B2006101440536 A CNB2006101440536 A CN B2006101440536A CN 200610144053 A CN200610144053 A CN 200610144053A CN 100555698 C CN100555698 C CN 100555698C
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CN101192645A (en
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竺云
蔡建旺
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Institute of Physics of CAS
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Abstract

The present invention relates to a kind of metal multiple layer film hall device, it is made of the magnetic metallic layers and the Pt layer of alternately growing on silicon chip, and magnetic metal selects Fe, Co for use or/and the CoFe alloy.This metal hall device has hypersensitivity, and at room temperature even can reach 1200V/AT, the sensitivity that this has surpassed present semiconductor Hall devices can be applicable in transducer and the magnetic-memory system.The preparation technology of above-mentioned metal hall device provided by the invention is simple, repetition and stable, is fit to very much practical operation.

Description

A kind of metal multiple layer film hall device and preparation method thereof
Technical field
The present invention relates to a kind of metal hall device, specifically relate to a kind of supersensitive metal multiple layer film hall device that has, and preparation method thereof.
Background technology
It is good, highly sensitive to have linear characteristic based on the hall device of Hall effect, good stability, characteristics such as control is simple, convenient.At present, semiconductor Hall devices has been widely used in transducer and the magnetic-memory system, is used for magnetic field, electric current, displacement etc. are detected.But semi-conductive high resistivity, low operating frequency and complicated preparation technology will hinder it and further develop.Metal device can well overcome these problems, just because the carrier concentration of metal is very high, so normal Hall effect is very faint.The extraordinary Hall effect of ferromagnetic metal that originates from spin-orbit interaction is often than the big several magnitude of normal Hall effect; but; the extraordinary Hall effect of general ferromagnetic metal still has bigger gap with semi-conductive comparing; therefore, strengthen metallic ferromagnetic extraordinary Hall effect and become problem anxious to be solved.
In order to strengthen extraordinary Hall effect; people select for use rare earth element and feeromagnetic metal to form alloy in early days; though utilized the strong spin-orbit interaction of rare earth to obtain certain effect, because the magnetic transition temperature of rare earth is low, and the shortcoming of corrosion easily and being eliminated gradually.In addition, adopting the membrana granulosa structure, ferromagnetic particle is embedded in the oxide-insulator also can obtains high extraordinary Hall effect, is that this membrana granulosa structure has high resistivity, and this also will hinder it and further develop.Recently the Pt of research base ferromagnetic metal alloy has been obtained reasonable result, and FePt alloy especially is for example for the Fe of 3nm 35Pt 65At 110K, the Hall slope can reach 76.8 μ Ω cm/T, the sensitivity of corresponding hall device can reach 250V/AT (document Appl.Phys.Lett.85,73 (2004)), but this remolding sensitivity with the 1000V/AT of present semiconductor Hall devices gets up to also have one section gap (document IEEE Trans.Electron Devices 43,1665 (1996)).
Summary of the invention
The objective of the invention is to overcome all deficiencies of above-mentioned prior art, in solving semiconductor Hall devices, in the preparation technology's of semi-conductive high resistivity, low operating frequency and complexity the problem, provide a kind of highly sensitive metal multiple layer film hall device that can be comparable with semiconductor Hall devices.
Another object of the present invention is to provide a kind of technology to be fit to simply, very much practical operation and repeat the method for the stable above-mentioned metal multiple layer film hall device of preparation.
The objective of the invention is to realize by the following technical solutions:
Metal multiple layer film hall device provided by the invention as shown in Figure 1, comprising: the magnetic metallic layers 2 and the Pt layer 3 of a silica-based lamella 1 and alternate cycle growth thereon, and periodicity depends on the needs;
Described magnetic metallic layers is used to produce extraordinary Hall effect, and the material of this layer is that Fe, Co are or/and Co 100-xFe xAlloy (atomic ratio scope: 0＜x＜100);
Described Pt layer is used to provide strong spin-orbit interaction and protection multilayer film to prevent oxidized.
When described magnetic metallic layers all was Fe, alternately periodically the magnetic metallic layers of growth and the structural table of Pt layer were shown [Fe (t on the substrate layer FeNm)/Pt (t PtNm)] m, the thickness t of Fe layer wherein FeBe 0.2-0.6nm, the thickness t of Pt layer PtBe 0.4-1.8nm, it is 2-24 that growth cycle is counted m; Preferably, the thickness t of Fe layer FeBe 0.4nm, the thickness t of Pt layer PtBe 1.2nm, it is 12 that growth cycle is counted m, i.e. [Fe (0.4nm)/Pt (1.2nm)] 12
When described magnetic metallic layers all was Co, alternately periodically the magnetic metallic layers of growth and the structural table of Pt layer were shown [Co (t on the substrate layer CoNm)/Pt (t PtNm)] i, the thickness t of Co layer wherein CoBe 0.2-0.5nm, the thickness t of Pt layer PtBe 0.6-2nm, it is 2-4 that growth cycle is counted i.
When described magnetic metallic layers all was CoFe, alternately periodically the magnetic metallic layers of growth and the structural table of Pt layer were shown [CoFe (t on the substrate layer CoFeNm)/Pt (t PtNm)] n, the thickness t of CoFe layer wherein CoFeBe 0.2-0.5nm, the thickness t of Pt layer PtBe 0.6-2nm, it is 2-4 that growth cycle is counted n; Preferably, described magnetic metallic layers is Co 90Fe 10, its thickness t CoFeBe 0.28nm, the thickness t of Pt layer PtBe 1.2nm, it is 3 that growth cycle is counted n, i.e. [Co 90Fe 10(0.28nm)/Pt (1.2nm)] 3
When described magnetic metallic layers was the combination of Fe and CoFe, alternately periodically the magnetic metallic layers of growth and the structural table of Pt layer were shown [CoFe (t on the substrate layer CoFeNm)/Pt (t PtNm)] n/ [Fe (t FeNm)/Pt (t PtNm)] m, perhaps [Fe (t FeNm)/Pt (t PtNm)] m/ [CoFe (t CoFeNm)/Pt (t PtNm)] n/ [Fe (t FeNm)/Pt (t PtNm)] m, the thickness t of Fe layer wherein FeBe 0.3-0.4nm, the thickness t of CoFe layer CoFeBe 0.2-0.5nm, the thickness t of Pt layer PtBe 0.9-2nm, it is 1-5 that growth cycle is counted m, and n is 2-4; Preferably, described magnetic metallic layers is Co 90Fe 10With the combination of Fe, wherein t CoFeBe 0.28nm, t FeBe 0.4nm, the thickness t of Pt layer PtBe 1.2nm, it is 3 that growth cycle is counted n, and m is 1-4, i.e. [Co 90Fe 10(0.28nm)/Pt (1.2nm)] 3/ [Fe (0.4nm)/Pt (1.2nm)] 1-4Preferably, described magnetic metallic layers is Co 90Fe 10With the combination of Fe, wherein t CoFeBe 0.3nm, t FeBe 0.4nm, the thickness t of Pt layer PtBe 1.2nm, the growth cycle number is respectively that m is 1, and n is 2, and m is 1, i.e. [Fe (0.4nm)/Pt (1.2nm)] 1/ [Co 90Fe 10(0.3nm)/Pt (1.2nm)] 2/ [Fe (0.4nm)/Pt (1.2nm)] 1
The invention provides the preparation method of two kinds of above-mentioned metal multiple layer film hall devices, first method comprises following step:
1) be coated with photoresist on the silicon chip of surface heat oxidation, and expose with the uv-exposure machine, behind the developing fixing, the photoresist of hall measurement visuals is removed, and the silicon chip beyond the measurement pattern is still covered by photoresist;
2) adopt vacuum deposition method, plate aforesaid magnetic metallic layers and Pt layer on the silicon chip after step 1) is handled, periodicity is decided on growth needs;
3) adopt lift-off technology to remove photoresist to the sample that has plated behind the film, form the hall measurement figure.
The preparation method of second kind of above-mentioned metal multiple layer film hall device provided by the invention comprises following step:
1) adopt vacuum deposition method, directly alternately plate aforesaid magnetic metallic layers and Pt layer on the silicon chip of surface heat oxidation, periodicity is decided on growth needs;
2) be coated with photoresist on the sample after step 1) has been plated film, and expose with the uv-exposure machine, behind the developing fixing, the hall measurement visuals is still covered by photoresist, and the photoresist beyond the measurement pattern has been removed;
3) with step 2) sample after handling puts into ion beam etching machine etching, puts into the ultrasonic photoresist that removes of absolute ethyl alcohol or acetone then, finally obtains the hall measurement figure.
When adopting described vacuum deposition method plated film in above-mentioned two kinds of methods, base vacuum is better than 10 -4Pa.
Metal hall device provided by the invention is made of the magnetic metallic layers and the Pt layer of alternately growing on silicon chip, and magnetic metal selects Fe, Co for use or/and the CoFe alloy.This metal hall device has hypersensitivity, and at room temperature even can reach 1200V/AT, this has surpassed the sensitivity of present semiconductor Hall devices.This is because one aspect of the present invention has been utilized the strong spin-orbit interaction of Pt, has obtained higher Hall resistance value; Utilized the adjustable surface or the interface anisotropy of multilayer film on the other hand, each tunic is thick regulates interface anisotropy and shape anisotropy with periodicity by regulating, thereby changes the size of saturation field, has finally increased Hall slope and sensitivity greatly.For example, when magnetic metallic layers is the CoFe layer, because the CoFe/Pt multilayer film has perpendicular magnetic anisotropy, the adjusting of thick periodicity in by each tunic, can be easy to obtain a negative effective anisotropy field, thereby reduce saturation field greatly, greatly improve sensitivity.In addition, also can obtain being applicable to the hall device of different magnetic field scope by the combination of CoFe/Pt and Fe/Pt.At last layer growth Pt of metal hall device provided by the invention layer, can also play erosion-resisting effect.
The preparation technology of metal hall device provided by the invention is simple, repetition and stable, is fit to very much practical operation.
Metal hall device provided by the invention can be applicable in transducer and the magnetic-memory system.
Description of drawings
Fig. 1 is the structural representation of metal multiple layer film hall device of the present invention; Wherein, 1-substrate layer, 2-magnetic metallic layers, 3-Pt layer;
Fig. 2 is a metal hall device measurement pattern schematic diagram of the present invention; Wherein, 4 and 5 ends lead to a constant current, 6 and 7 end measuring voltages, and externally-applied magnetic field is perpendicular to electric current and voltage direction;
Fig. 3 be among the embodiment 1 Hall slope and saturation field with the variation relation of Pt layer thickness;
Fig. 4 be among the embodiment 2 magnetization with the variation relation of externally-applied magnetic field;
Fig. 5 be among the embodiment 2 Hall resistance with the variation relation of externally-applied magnetic field;
Fig. 6 be among the embodiment 3 Hall resistance with the variation relation of externally-applied magnetic field; Wherein, m=1, the corresponding ■ of 2,3 difference, ▲, ★;
Fig. 7 be among the embodiment 4 Hall resistance with the variation relation of externally-applied magnetic field.
Embodiment
Below metal hall device among all embodiment all can adopt one of aforesaid two kinds of methods to be prepared.Si/[CoFe (t with embodiment 2 CoFeNm)/Pt (t PtNm)] nBe example, can adopt following two kinds of methods to be prepared.
Method one: at first be coated with photoresist on the Si of surface heat oxidation substrate, and expose with the uv-exposure machine, behind the developing fixing, the photoresist of hall measurement visuals is removed, and the Si substrate beyond the measurement pattern is still covered by photoresist.Then adopt magnetically controlled sputter method, the base vacuum degree is lower than 10 -4Pa, and the deposition operating air pressure under the inert atmosphere is 0.5-0.6Pa plates the CoFe of 0.28nm in 3 cycles and the Pt of 1.2nm on the Si substrate after the processing.Adopt lift-off technology to remove photoresist to sample at last and form the hall measurement figure.
Method two: at first adopt magnetically controlled sputter method, the base vacuum degree is lower than 10 -4Pa, and the deposition operating air pressure under the inert atmosphere is 0.5-0.6Pa plates the CoFe of 0.28nm in 3 cycles and the Pt of 1.2nm on the Si of surface heat oxidation substrate.To plate the sample coating photoresist of film then, and expose with the uv-exposure machine, behind the developing fixing, the hall measurement visuals is still covered by photoresist, and the photoresist beyond the measurement pattern is removed.Then sample is put into ion beam etching machine etching, put into the ultrasonic photoresist that removes of absolute ethyl alcohol or acetone then, finally obtain the hall measurement figure.
The sample for preparing is fixed in the sample holder, and ultrasonic bonding connected electrode, measured with four-end method then.Architectural characteristic and magnetic are measured by X-ray diffractometer XRD and vibrating specimen magnetometer VSM respectively.
For the ease of comparing and the analysis device performance, the Hall resistance of definition film is:
ρ xy＝(V xy/I)t＝R 0H+4πR SM
Wherein, R 0Be normal Hall coefficient, R SBe unusual Hall coefficient, V XyBe Hall voltage, t is a film thickness.The Hall slope is normally defined R as a key property of hall device H=d ρ Xy/ dH ≈ 4 π χR S, and hall sensitivity K H=R H/ t.
Embodiment 1
Adopt one of aforesaid two kinds of methods to be prepared the metal hall device, its concrete structure is: substrate Si/[Fe (t FeNm)/Pt (t PtNm)] m, t wherein FeBe 0.4, t PtBe 0.4,0.6,0.8,1,1.2,1.4,1.6, corresponding period m is 24,20,16,14,12,11,10.
The Hall slope of this series metal hall device and saturation field H SWith the variation relation of Pt layer thickness as shown in Figure 3, the Hall slope of sample reduces with saturation field and increases gradually, reaches maximum at the thickness of Pt during for 1.2nm, near 10 μ Ω cm/T, at this moment Fe and the atomic ratio of Pt are 30: 70, and the result of this result and FePt alloy is similar.What but the Fe/Pt multilayer film was better than the FePt alloy is, is reaching certain Hall slope value, and for example more than 3 μ Ω cm/T, the composition of Fe and Pt is than regulating in wideer scope.
Embodiment 2
Adopt one of aforesaid two kinds of methods to be prepared the metal hall device, its concrete structure is: substrate Si/[Co 90Fe 10(0.28nm)/Pt (1.2nm)] 3
The magnetization of this metal hall device and Hall resistance are distinguished as shown in Figure 4 and Figure 5 with the variation relation of externally-applied magnetic field, can observe, and be one to one between the Hall resistance and the magnetization, before not reaching capacity, all show good linearity.In desirable multi-layer film structure, effective anisotropy K EffBe expressed as
K eff = 2 K S 1 t CoFe - 2 π M S 2 ,
K wherein SBe surface or interface anisotropy, second is shape anisotropy.Because CoFe/Pt has perpendicular magnetic anisotropy, can find from formula, thick by each tunic in adjusting periodicity can be easy to obtain a negative effective anisotropy field, thereby reduced saturation field greatly, improves sensitivity greatly.Calculated by the Hall resistance of Fig. 5 and the relation in magnetic field, at room temperature, the Hall slope reaches 545 μ Ω cm/T, and sensitivity can reach 1200V/AT, this in addition surpassed the sensitivity of present semiconductor Hall devices.And the resistivity of measuring is about 60 μ Ω cm, and is littler 3 more than the magnitude than semi-conductive resistivity.
Embodiment 3
Adopt one of aforesaid two kinds of methods to be prepared the metal hall device, its concrete structure is: substrate Si/[CoFe (t CoFeNm)/Pt (t PtNm)] n/ [Fe (t FeNm)/Pt (t PtNm)] m, wherein the composition of CoFe alloy is Co 90Fe 10, thickness t CoFeBe 0.28, t PtBe 1.2, cycle n is 3, t FeBe 0.4, t PtBe 1.2, m is respectively 1,2,3.
The Hall resistance of this series metal hall device with the variation relation of externally-applied magnetic field as shown in Figure 6, the as seen combination by CoFe/Pt and Fe/Pt can be with the applied field expanded range to 400Oe, and keeps good linearity simultaneously.
Embodiment 4
Adopt one of aforesaid two kinds of methods to be prepared the metal hall device, its concrete structure is: substrate Si/[Fe (0.4nm)/Pt (1.2nm)]/[Co 90Fe 10(0.3nm)/Pt (1.2nm)] 2/ [Fe (0.4nm)/Pt (1.2nm)].
The Hall resistance of this metal hall device with the variation relation of externally-applied magnetic field as shown in Figure 7, in this embodiment, CoFe/Pt and the Fe/Pt combination by different modes equally can be with the applied field expanded range to 200Oe, and keeps good linearity simultaneously.

Claims (5)

1, a kind of metal multiple layer film hall device comprises: a silica-based lamella and submit magnetic metallic layers and Pt layer for periodically growth at described silica-based lamella, the structural formula of described magnetic metallic layers and Pt layer is: [CoFe (t CoFeNm)/Pt (t PtNm)] nDescribed magnetic metallic layers is Co 90Fe 10Layer, its thickness is 0.28nm;
Described Pt layer thickness is 1.2nm;
It is 3 that growth cycle is counted n.
2, metal multiple layer film hall device as claimed in claim 1 is characterized in that: the structural formula of described magnetic metallic layers and Pt layer is: [CoFe/Pt] n/ [Fe/Pt] m, wherein the composition of CoFe alloy is Co 90Fe 10, described Co 90Fe 10Thickness is 0.28nm;
Described Pt layer is 1.2nm;
Described Fe rete is thick to be 0.4nm;
Described Pt rete is thick to be 1.2nm, and period m is 1-3.
3, metal multiple layer film hall device as claimed in claim 1 is characterized in that: described magnetic metallic layers is the combination of Fe and CoFe, and its concrete structure is: [Fe (0.4nm)/Pt (1.2nm)]/[Co 90Fe 10(0.3nm)/Pt (1.2nm)] 2/ [Fe (0.4nm)/Pt (1.2nm)].
4, the preparation method of a kind of claim 1 or 2 described metal multiple layer film hall devices comprises following step:
1) be coated with photoresist on the silicon chip of surface heat oxidation, and expose with the uv-exposure machine, behind the developing fixing, the photoresist of hall measurement visuals is removed, and the silicon chip beyond the measurement pattern is still covered by photoresist;
2) adopt vacuum deposition method, on the silicon chip after step 1) is handled, the magnetic metallic layers of alternate cycle growth and Pt layer, the structural formula of described magnetic metallic layers and Pt layer is: [CoFe (t CoFeNm)/Pt (t PtNm)] nDescribed magnetic metallic layers is Co 90Fe 10Layer, its thickness is 0.28nm;
Described Pt layer thickness is 1.2nm; It is 3 that growth cycle is counted n; Perhaps
On the silicon chip after step 1) is handled, the magnetic metallic layers of alternate cycle growth and Pt layer, the structural formula of described magnetic metallic layers and Pt layer is: [CoFe/Pt] n/ [Fe/Pt] m, wherein the composition of CoFe alloy is Co 90Fe 10, described Co 90Fe 10Thickness is 0.28nm;
Described Pt layer is 1.2nm;
Described Fe rete is thick to be 0.4nm;
Described Pt rete is thick to be 1.2nm, and period m is 1-3;
3) to step 2) sample that plated behind the film adopts lift-off technology to remove photoresist, forms the hall measurement figure.
5, the preparation method of a kind of claim 1 or 2 described metal multiple layer film hall devices comprises following step:
1) adopt vacuum deposition method, on the silicon chip of surface heat oxidation, the magnetic metallic layers and the Pt layer of direct alternate cycle growth, the structural formula of described magnetic metallic layers and Pt layer is: [CoFe (t CoFeNm)/Pt (t PtNm)] nDescribed magnetic metallic layers is Co 90Fe 10Layer, its thickness is 0.28nm;
Described Pt layer thickness is 1.2nm; It is 3 that growth cycle is counted n; Perhaps
On the silicon chip after step 1) is handled, the magnetic metallic layers and the Pt layer of direct alternate cycle growth, the structural formula of described magnetic metallic layers and Pt layer is: [CoFe/Pt] n/ [Fe/Pt] m, wherein the composition of CoFe alloy is Co 90Fe 10, described Co 90Fe 10Thickness is 0.28nm;
Described Pt layer is 1.2nm;
Described Fe rete is thick to be 0.4nm;
Described Pt rete is thick to be 1.2nm, and period m is 1-3;
2) be coated with photoresist on the sample after step 1) has been plated film, and expose with the uv-exposure machine, behind the developing fixing, the hall measurement visuals is still covered by photoresist, and the photoresist beyond the measurement pattern has been removed;
3) with step 2) sample after handling puts into ion beam etching machine etching, puts into the ultrasonic photoresist that removes of absolute ethyl alcohol or acetone then, finally obtains the hall measurement figure.
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CN101934608A (en) * 2010-07-22 2011-01-05 兰州大学 Giant Hall effect film material for magnetic field measurement and preparation method thereof
CN102024904B (en) * 2010-09-30 2012-12-26 北京科技大学 Film material for high-sensitivity metal Hall sensor and preparation method of film material
CN102447055A (en) * 2010-10-09 2012-05-09 中国科学院物理研究所 Magnetic metal thin film type hall device and preparation method thereof
CN105374932B (en) * 2015-10-22 2017-11-10 重庆科技学院 A kind of structure for regulating and controlling Hall effect by polarised direction
CN107119261B (en) * 2017-05-09 2019-02-05 电子科技大学 A kind of huge logic gates alloy film material and its preparation method and application
CN109633213B (en) * 2018-12-14 2021-05-18 中国电子科技集团公司第四十九研究所 Magnetic gathering ring for current sensor
CN113437210B (en) * 2021-06-24 2023-04-07 杭州电子科技大学 Current regulation and control magnetic random access memory based on spin orbit torque

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