CN100553055C - A kind of ultra-large power semiconductor array cavity distortion compensation rate full dose is obtained technology - Google Patents

Abstract

The invention provides in a kind of ultra-high power semiconductor array, overcoming exocoel deformation influences phase-locked quality, compensates the required compensation rate of deformation and obtains technology for avoiding reducing phase-locked quality.The subsystem of a drive test amount exocoel deformation relevant with CCD1 utilizes speculum R2.1, speculum 3, zoom optics 1, lens 1, half the He-Ne laser beam image that focuses on the outer cavity reflection of warp is on CCD1, calculate facula mass center by processor 1, and calculate calibrated variable quantity, thereby obtain the deformation data of a direction of external cavity mirror, and when it reaches thresholding, obtain method and know compensation rate by partly measuring compensation rate, and then cooperate corresponding D/A, corresponding high drive module, drive installation is expanded at the corresponding piezoelectricity compensator PZT of external cavity mirror terminal position, compensation, thereby timely compensation β is in the drift of a direction, the external cavity mirror deformation at random that timely compensation is caused by residual heat effect etc., make and adopt the phase-locked ultra large power two-dimensional semiconductor array stable ground of external cavity mirror of coupling angle to shake, ensure the high-quality of array stable output in the homophase mould.

Description

A kind of ultra-large power semiconductor array cavity distortion compensation rate full dose is obtained technology

Technical field

The invention belongs to the stabilization technique of the phase-locked operation of ultra-high power semiconductor array, after relating to the external cavity mirror selection lowest order super-mode concussion of ultra-high power semiconductor array by the adaptive angle of deflection, residual heat effect etc. is caused that exocoel deformation causes departing from of adaptive angle, relate to and prevent the non-lowest order super-mode starting of oscillation relevant with exocoel deformation, relate to exocoel distortion measurement and compensation rate and obtain, relate to and ensure that array stable ground shakes in lowest order super-mode and move.

Background technology

Semi-conductor array quantum efficiency height, the output wavelength scope contains 570nm to 1600nm, working life can reach millions of hours, the lamination array can provide the output of ultra high power laser, such as industry, a lot of fields such as medical science have boundless and good prospects for application, but because that each luminescence unit of semi-conductor array of free-running operation sends is only incoherent, its output quality is relatively poor, particularly the angle of divergence of slow axis multimode output is big, spectral width, disturbing, chromatic dispersion, aspect characteristic extreme differences such as directivity, both can't focus on small size by optical system, can't realize long-distance transmissions again, seriously hinder it in machining, surface treatment, the high power density pumping, obtain in the fields such as space high speed optical communication effectively to use.Thereby, take the phase-locked measure in space to make each unit run on identical wavelength and make and have fixing phase difference between them, it is most important just to become.

Realize that the relevant operation method in each unit comprises inner couplings and coupled outside.Inner couplings distributes, constructs suitable measures such as active layer, substrate and cover layer by control refractive index, gain region makes the position obtain locking mutually, but the corresponding luminescence unit width of this kind mechanism has limited the power that semi-conductor array can be exported greatly, in addition, its corresponding systematic jitters can increasing with the increase of drive current and increase along with luminescence unit.Coupled outside is by realizing phase-locked output in outside phase conjugate lens feedback injection locking technique, principal and subordinate's laser injection locking technique, the external cavity mirror technology of adopting of semi-conductor array.

Reach hundreds of microns high power semiconductor laser array for adjacent luminescence unit distance, suitable especially employing is phase-locked based on the exocoel coupling of mode coupling theory and Talbot chamber theory, the corresponding power coupling mainly occurs between the next-door neighbour unit, the coupling of non-adjacent unit can be ignored, and corresponding system is simple in structure and effect is good.

Utilize the work centre wavelength to be λ, the slow axis array cycle is d, and the chamber is long to be L _C=d ²/ 2 λ, the external cavity mirror normal direction can successfully lock the high power semiconductor laser array phase place perpendicular to the 1/4Talbot external cavity mirror technology of slow axis, but corresponding far-field distribution is the bivalve structure, indicates that corresponding concussion pattern is high-order super model; According to mark Talbot chamber field distribution rule, shake in lowest order super-mode for making system, to obtain far-field distribution is the single-lobe structure, splendid output near diffraction limit, must be with this 1/4Talbot external cavity mirror at slow-axis direction deflection certain angle suitably, this is the mode that two-dimensional semiconductor lamination array adopts the concussion of exocoel choice of technology lowest order super-mode, successfully obtain Project Realization, yet, be applied to the ultra large power two-dimensional semiconductor array when phase-locked in this technology, after the external cavity mirror of the adaptive angle that tilts makes array select the lowest order super-mode concussion, though cooling subsystem can ensure the array continuous firing, but the residual heat effect can make that still exocoel deformation constantly aggravates, add platform vibrations etc., cause high-order super model concussion.Therefore, must take steady mould measure to the ultra large power two-dimensional semiconductor array, so that array can stably shake in lowest order super-mode, the outputting high quality laser beam, for this reason, the present invention has provided a kind of ultra-large power semiconductor array cavity distortion compensation rate and has obtained technology,

Summary of the invention

The technical problem that the present invention is directed to is described: when semi-conductor array adopts 1/4Talbot external cavity mirror technology phase-locked, after its external cavity mirror is by the location deflection β=λ/2d perpendicular to luminescence unit, the high-order super model light reflection that external cavity mirror is sent luminescence unit also images between luminescence unit, thereby, cavity loss is very big, and simultaneously, the lowest order super-mode light reflection that luminescence unit is sent also images in the luminescence unit, thereby array will select lowest order super-mode concussion, and array and corresponding light field distribution are as shown in Figure 1.But, for the ultra large power two-dimensional semiconductor array, when this technology of employing is phase-locked, though the cooling subsystem of array can ensure the array continuous firing, along with the increase of array power output,, will cause the β drift because residual heat effect etc. act on external cavity mirror, for Guang Fa district slow axis width is any one luminescence unit of S, when the β drift surpasses S λ/2d ²The time, the lowest order super-mode reverberation that surpasses half will image between the luminescence unit, cause high-order super model to be dominant; When the β drift surpasses ((d-S) λ)/2d ²The time, the high-order super model reverberation that surpasses half will image in the lightening hole, also will cause high-order super model to be dominant, shake in lowest order super-mode for ensureing array invariablely, must compensate the β drift that external cavity mirror deformation causes in time, and exocoel deformation compensation rate to obtain be the system input source spring that successfully compensates, for compensating operation, be the decision key of success first step.

The technical problem solution that the present invention is directed to: along with the increase of array output lowest order super-mode laser power, because residual heat effect, and running environment etc. is given the phase-locked influence that brings of array, cause the external cavity mirror deformation of the phase-locked semi-conductor array of 1/4Talbot external cavity mirror technology, cause β that the two-way drift of near symmetrical takes place, the property of the present invention is directed to ground adopts the phase-locked stable servo of two-way, promptly relevant phase-locked stable servo-drive subsystem with CCD1 and with CCD2 relevant phase-locked stable servo-drive subsystem, each measures the drift value of a direction of β in real time, and respectively timely compensation it, overcome the influence of direction drift of β to phase-locked stability.Two-way is surveyed the compensation of Compensation subsystem combined detection, makes array stable ground and runs on lowest order super-mode.

Fig. 2 is ultra large power two-dimensional semiconductor lock phase array two-path adaptive sensing bucking-out system structural design of the present invention, constitutes element, reaches the operation schematic diagram, and the transmission length that the laser that each luminescence unit sends is sent to external cavity mirror is long for the 1/4Talbot chamber, i.e. L _C=d ²/ 2 λ, external cavity mirror the slow axis counterparty to deflection angle β=λ/2d; The laser beam that sends by the He-Ne laser, expand bundle through the coupling beam expanding lens, reflect by spectroscope again, project on the 1/4Talbot external cavity mirror reflecting surface of inclination β, thereafter, He-Ne laser beam through the external cavity mirror reflection will penetrate spectroscope, toward mirror R1.1 and R1.2, after speculum 2 reflections, that part of He-Ne laser beam of corresponding R1.1 will be regulated through zoom optics 1, with matched lenses 1, image on the CCD1, treated device 1 is handled, and knows this laser beam spot barycenter, after the demarcation, when lock phase array moves, corresponding with it calibration slopes is obtained in the variation of this facula mass center of sensing in real time, obtains method by operation full dose compensation rate again, obtain the required compensation rate of the corresponding exocoel deformation of compensation, collaborative by each unit of subsystem of corresponding compensation exocoel deformation again, expand by the piezoelectricity compensator on the driving R1.1 such as the relevant required driving voltage value of piezoelectricity compensator through corresponding high drive module, compensation β is in the drift (referring to embodiment) of this direction; Operate simultaneously with the relevant phase-locked stable servo-drive subsystem of above-mentioned CCD1 that overcomes a direction drift of β, remaining He-Ne laser beam, be that part of of corresponding R1.2, to regulate through zoom optics 2, with matched lenses 2, image on the CCD2, corresponding facula mass center is demarcated and the variable quantity that caused by exocoel deformation is finished until driving obtaining by processor 2 and relevant device of the relevant required driving voltage value of piezoelectricity compensator etc., and then cooperate corresponding D/A, corresponding high drive module, the piezoelectricity compensator PZT that drives R1.2 expands, and makes the deformation of external cavity mirror another one direction be compensated (referring to embodiment).Relevant phase-locked stable servo-drive subsystem with CCD1 and with CCD2 relevant phase-locked stable servo-drive subsystem two-way is equal to fully, not only the two-way subsystem is interchangeable, and in software and hardware, operation, the two each functional equivalent is partly also interchangeable.

Description of drawings

Fig. 1 is phase-locked semi-conductor array of 1/4Talbot external cavity mirror technology and the corresponding light field distribution schematic diagram of inclination β, β=λ/2d

Fig. 2 is the phase-locked stabilization technique system schematic of the operation interchangeable ultra large power two-dimensional semiconductor array of two-way of the present invention;

Fig. 3 is for before adopting given technology of the present invention and supporting exocoel deformation compensation technique thereof, the typical output field of the phase-locked operation of ultra-high power semiconductor array distributes, be out of shape owing to external cavity mirror is influenced by residual heat effect etc., cause non-lowest order super-mode vibration, the far field has become three valve structures.

Fig. 4 is for after adopting given technology of the present invention and supporting exocoel deformation compensation technique thereof, and the typical output field of the phase-locked operation of ultra-high power semiconductor array distributes, and is the single-lobe structure, as seen, the β drift is corrected, and exocoel distortion sensing Compensation subsystem runs on lowest order super-mode with can ensureing array stable

The present invention can the phase-locked operation of servo well array stable.

Specify content of the present invention below by example:

Embodiment

The He-Ne laser that the sensor measuring light source sends, expand bundle through the coupling beam expanding lens, reflect by spectroscope again, project on the 1/4Talbot external cavity mirror reflecting surface of inclination β, thereafter, to be penetrated spectroscope by external cavity mirror laser light reflected bundle, toward mirror R1.1 and R1.2, after speculum 2 reflections, the laser beam that zoom optics 1 is regulated from R2.1 makes lens 1 focusing self incident beam on CCD1, meanwhile, the laser beam that zoom optics 2 is regulated from R2.2 makes lens 2 that second half incident beam is imaged on the CCD2.

The last facula mass center of CCD is (x _C, y _C), by

$x_C=\frac{\underset{i=1}{\overset{M}{\mathrm{\Σ}}}\underset{j=1}{\overset{N}{\mathrm{\Σ}}}{x}_{\mathrm{ij}}{I}_{\mathrm{ij}}}{\underset{i=1}{\overset{M}{\mathrm{\Σ}}}\underset{j=1}{\overset{N}{\mathrm{\Σ}}}{I}_{\mathrm{ij}}},y_C=\frac{\underset{i=1}{\overset{M}{\mathrm{\Σ}}}\underset{j=1}{\overset{N}{\mathrm{\Σ}}}{y}_{\mathrm{ij}}{I}_{\mathrm{ij}}}{\underset{i=1}{\overset{M}{\mathrm{\Σ}}}\underset{j=1}{\overset{N}{\mathrm{\Σ}}}{I}_{\mathrm{ij}}}$

Calculate, M is the line number in the CCD pel array formula in the formula, and N is the columns in the CCD pel array formula, x _IjBe pixel (i, x coordinate j), y _IjBe pixel (i, Y coordinate j), I _IjRespective pixel (i, output intensity value j).If when deformation does not take place external cavity mirror, a facula mass center is (x _C0, y _C0), so, after the external cavity mirror generation deformation, certain deviation will take place and become (x in corresponding facula mass center _C1, y _C1), if the focal length of respective lens is f, then required calibration slopes is

S _x＝(x _C1-x _C0)/f，S _y＝(y _C1-y _C0)/f；

What cause the β drift is exocoel Z axial deformation, so, when drift value is Δ β,,, then only need make reflecting surface in the axial backwards rotation of corresponding Z if its distance to the symmetrical center line of two-way drift is l for a bit any on the exocoel mirroring face

δ _z＝(l/2)*Δβ；

Just can compensate the drift of a direction, this makes processor obtaining desired parameters, and calculates S in real time _xAnd S _yAfter, note directions X external cavity mirror length is 2a, promptly represents half of directions X external cavity mirror length with symbol a, then presses

δ _z＝(ω _aa)*(ω _xS _x+ω _y*S _y)

Calculate required compensation rate, in the formula, 2a is a directions X external cavity mirror length, ω _x, ω _y, ω _aBe the corresponding S of difference _x, S _y, a the precision performance weighted value, with the deformation quantity of external cavity mirror both direction and compensate crosslinked relevant.

For β drift forcing frequency, the transfer function P of piezoelectricity compensator _TfHandle the precision and the speed requirement that just can satisfy the steady mould adaptive control of regional sensing and compensating well by constant, corresponding compensator is the relevant beneficial effect of the present invention of compensation: the two-path adaptive sensing compensates steady modular system by two-way measurement subsystem and Compensation subsystem combined measurement and compensation, can be servo well in the 1/4Talbot of inclination λ/2d external cavity mirror technology, overcome external cavity mirror deformation and give the phase-locked influence that brings of ultra large power two-dimensional semiconductor array, array can stably be shaken in lowest order super-mode.The required driving voltage of external cavity mirror deformation

V _Z＝δ _Z/P _tf；

In view of the above, associative processor cooperates D/A, high drive module etc. in good time after calculating driving voltage, and the PZT of drive pressure electronic compensating device expands, the deformation of compensation external cavity mirror.

Be the two-way drift of compensation β, the processing of the detection of corresponding that direction deformation of R1.1 of external cavity mirror, computing, compensation is by R1.1, CCD1, processor 1, supporting D/A, high drive module 1, the collaborative complete operation of supporting piezoelectricity compensator; Simultaneously, another direction of external cavity mirror, i.e. the processing of the detection of that direction deformation of corresponding R1.2, computing, compensation is by R1.2, CCD2, processor 2, supporting D/A, high drive module 2, the collaborative complete operation of supporting piezoelectricity compensator.

Beneficial effect of the present invention: the ultra-large power semiconductor array cavity distortion compensation rate that the present invention provides is obtained technology, and itself and supporting exocoel deformation compensate skill Art together can be well servo in the 1/4Talbot of inclination λ/2d external cavity mirror technology, overcomes external cavity mirror deformation and give the ultra large power two-dimensional semiconductor array The phase-locked impact that brings can stably be shaken in lowest order super-mode array, stably obtains high-quality output, makes array to the adaptability of working environment Be enhanced.

Claims (1)

1, a kind of exocoel deformation compensation rate acquisition methods of serving the Stability Control of ultra-high power semiconductor array selection homophase mould operation, it is characterized in that: rely on to make up two-way detection Compensation subsystem, obtain method by the full dose compensation rate and know compensation rate, the 1/4talbot external cavity mirror is β at the angle of inclination of slow-axis direction, and β=λ/2d, λ is the work centre wavelength in the following formula, d is the slow axis array cycle, described two-way is surveyed Compensation subsystem and is comprised the He-Ne laser, the coupling beam expanding lens, spectroscope, the external cavity mirror of inclination β=λ/2d, first speculum, second speculum, the 3rd speculum, first zoom optics, second zoom optics, first lens, second lens, first charge coupled device, second charge coupled device, first processor, second processor, first digital to analog converter, second digital to analog converter, the first high drive module, the second high drive module, piezoelectricity compensator on first speculum and the piezoelectricity compensator on second speculum, the laser by the He-Ne laser sends expands bundle through the coupling beam expanding lens, reflect by spectroscope again, project on the described external cavity mirror reflecting surface, after the He-Ne laser beam of external cavity mirror reflection penetrates spectroscope, directive first speculum and second speculum, directive the 3rd speculum after first speculum and second mirror reflects is through the 3rd mirror reflects; Then, that part of He-Ne laser beam of corresponding first speculum is regulated through first zoom optics, to mate first lens, images on first charge coupled device, constitutes the first via thus and surveys Compensation subsystem; That part of He-Ne laser beam of corresponding second speculum is regulated through second zoom optics, to mate second lens, images on second charge coupled device, constitutes the second the tunnel thus and surveys Compensation subsystem; Handle through first processor, know the facula mass center that images in laser beam on first charge coupled device, after the demarcation, when lock phase array moves, the variation of this facula mass center of sensing in real time, obtain the calibration slopes corresponding with above-mentioned variation, obtain method by operation full dose compensation rate again, obtain the required compensation rate of the corresponding exocoel deformation of compensation, cooperate first digital to analog converter again, the first high drive module, expand by the piezoelectricity compensator that the required driving voltage value of piezoelectricity compensator on first speculum drives on first speculum through the first high drive module, the drift of compensation external cavity mirror angle of inclination beta on corresponding first via detection Compensation subsystem direction, carry out following operation simultaneously with above-mentioned compensating operation, through second processor processing, know the barycenter variable quantity that images in that laser beam spot barycenter on second charge coupled device is demarcated and cause by exocoel deformation, obtain the calibration slopes corresponding with this variable quantity, obtain method by operation full dose compensation rate again, obtain the required compensation rate of the corresponding exocoel deformation of compensation, cooperate second digital to analog converter again, the second high drive module, expand by the piezoelectricity compensator that the required driving voltage value of piezoelectricity compensator on second speculum drives on second speculum through the second high drive module, the external cavity mirror angle of inclination beta is compensated in the deformation of another one direction.

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