CN100550301C - The manufacture method of polysilicon membrane - Google Patents
The manufacture method of polysilicon membrane Download PDFInfo
- Publication number
- CN100550301C CN100550301C CN 200510131794 CN200510131794A CN100550301C CN 100550301 C CN100550301 C CN 100550301C CN 200510131794 CN200510131794 CN 200510131794 CN 200510131794 A CN200510131794 A CN 200510131794A CN 100550301 C CN100550301 C CN 100550301C
- Authority
- CN
- China
- Prior art keywords
- laser beam
- silicon layer
- laser
- patterned
- energy density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 78
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 74
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 73
- 239000012528 membrane Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000012545 processing Methods 0.000 claims abstract description 20
- 238000004093 laser heating Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 238000005660 chlorination reaction Methods 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 abstract description 33
- 230000008025 crystallization Effects 0.000 abstract description 29
- 230000000694 effects Effects 0.000 abstract description 19
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 45
- 238000005516 engineering process Methods 0.000 description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 description 24
- 239000002245 particle Substances 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- 238000013461 design Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000005499 laser crystallization Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000003760 hair shine Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000035784 germination Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
A kind of manufacture method of polysilicon membrane is to form silicon layer earlier on substrate, forms a heat retaining layer then on silicon layer, then, utilization has the laser beam of precipitous energy density gradient, carries out the LASER HEATING processing procedure, to bring out the part silicon layer the brilliant behavior of super horizontal length takes place.Wherein, heat retaining layer can be in the LASER HEATING processing procedure, and the effect that the crystallization behavior of silicon layer is produced assistant heating is to increase super horizontal long brilliant length.At last, repeatedly mobile laser beam is to the substrate diverse location, and irradiating laser is to finish the crystallization processing procedure of whole substrate.
Description
Technical field
The present invention relates to a kind of manufacture method of polysilicon membrane, particularly relate to a kind of manufacture method, to be applied to polycrystalline SiTFT or to include in the assembly manufacturing of polysilicon membrane with polysilicon membrane of the laterally long Jingjing grain of super large.
Background technology
Polysilicon (poly-silicon) is because of having the electrical characteristic that is better than amorphous silicon, and the advantage that is lower than the cost consideration of monocrystalline silicon, and in recent years on the film crystal pipe manufacturer, especially on thin-film transistor drives the application of LCD (TFT-LCD), extensively paid attention to.
Yet, the particle diameter of polysilicon crystal (grain size) size has very big influence for electron mobility (mobility) and component characteristic, wherein, the obstacle of the crystalline boundary that exists in the polysilicon (grain-boundary) when more charge carrier is by the grid passage in the constituent components.Therefore, how increasing the crystallization size of microcrystal of polysilicon, number of boundary is reduced, to promote the lifting of thin-film transistor component characteristic, promptly is considerable development trend in the polysilicon membrane manufacturing technology now.With the display technology is example, makes dynamical thin-film transistor, to develop more high performance flat-panel screens, promptly is the target of present display technology development.
The method of the polysilicon membrane of tradition manufacturing in the past is solid phase crystallization method (Solid PhaseCrystallization), yet because the highest bearing temperature of glass substrate is only had an appointment 650 ℃, so this method also is not suitable for flat-panel screens and makes.In addition, the method that also has direct vapor deposition polysilicon membrane.No matter but be above-mentioned solid phase crystallization method the or directly crystal grain of the formed polysilicon of vapour deposition is all quite little, the particle diameter 100nm that only has an appointment, therefore not good with the formed polysilicon membrane characteristic of these methods.
In the making of polysilicon membrane, that the most generally use is excimer laser tempering (Excimer Laser Anneal at present; ELA) technology is though getable polysilicon grain particle diameter Yue Keda 600nm still is apparent not enough for developing more high performance flat-panel screens.So, more began to have continuously transverse solidifying (Sequential Lateral Solidification in recent years; SLS) technology is suggested, it adopts the figure of photomask definition laser beam, make the ad-hoc location of laser radiation on silicon layer, to bring out the behavior that polysilicon is laterally grown up, and the mode that cooperates substrate to move, laser beam can be dropped in the brilliant scope of horizontal length of polysilicon layer successively, grow up continuously to impel crystal grain.
Yet, in continuously transverse solidifying technology, displacement for the irradiation position of laser beam, must be less than the brilliant distance of horizontal length that produces crystallization in the silicon layer, laser irradiating position is partly dropped on the horizontal long brilliant polysilicon grain of a preceding crystallization behavior, to reach the effect that crystal grain is grown up continuously.But by present general laser crystallization technology, the laterally long crystalline substance of the polysilicon that can form also only has 2 μ m approximately apart from maximum, therefore, if will use continuously transverse solidifying technology, promptly require very highly for the mobile accuracy of the irradiation position of laser beam, must reach time micron grade usually.
In addition, be example with another kind of point-like continuously transverse solidifying (dot-SLS) technology again, respectively with reference to Figure 1B, and Fig. 2 A～2H, wherein, Fig. 1 is the photomask pattern of the laser beam of traditional point-like continuously transverse solidifying technology, and Fig. 2 A～2H then is the crystallisation step schematic top plan view of traditional point-like continuously transverse solidifying technology.
In Fig. 1, point-like photomask 111 is in order to cover passing through of laser beam, to cover zone 122 in addition as for point-like photomask 111, then is in the laser crystallization processing procedure, the scope that laser beam can pass through.Then with reference to figure 2A～2H, so that the crystallization process of present point-like continuously transverse solidifying technology to be described, in Fig. 2 A, the actual position that is subjected to laser beam irradiation of the 220 general silicon layers of expression, zone, point-like block 210 is then represented in the silicon layer because of the point-like photomask covers, and is not excited the position of light beam irradiates.Because initial point-like photomask has covered the center of laser beam irradiation scope, therefore after carrying out the laser radiation first time, the crystallization behavior of silicon layer, be central authorities by the laser beam irradiation scope, the outer rim of point-like block 210 begins, in mode radially, outwards carry out laterally long crystalline substance gradually, laterally long brilliant length is about 2 μ m.Wherein, the arrangement on border 205 can demonstrate the brilliant direction of length and the structure of polysilicon.
Then, carry out moving of laser beam irradiation position for the first time, shown in Fig. 2 B, point-like block 210 is moved to position 212 (shown in the dotted line), point-like block 210 is moved in arbitrary horizontal long brilliant scope, to carry out the laser energy irradiation second time.So polysilicon layer will be again begun by the outer rim of position 212, and the long brilliant behavior of continuous transverse outwards takes place, so that crystal grain more grows up, and reach simultaneously and eliminate the partly effect on border 205, thereby form the crystalline state shown in Fig. 2 C.
Then, mobile laser beam irradiation position for the second time, make point-like block 210 move to position 214 again by position 212, to drop in the laterally long brilliant scope of another polysilicon, shown in Fig. 2 D, and carry out laser energy irradiation for the third time, irradiation this time can be eliminated segment boundary 205 again, thereby forms the crystalline state shown in Fig. 2 E.
If moving via laser beam irradiation position for the third time again, make point-like block 210 move to position 216 by position 214 again, then will there be very big probability to make point-like block 210 and laterally grow in the brilliant scope, and drop on just on the position of non-boundary, as shown in Fig. 2 F except dropping on arbitrary polysilicon.
At last, carry out the 4th laser energy irradiation, irradiation this time can be eliminated border 205 again again, thereby is able to form the non-boundary crystalline state shown in Fig. 2 G.So, finally promptly might form the crystal grain shown in Fig. 2 H near mono-crystalline structures as if method according to this point-like continuously transverse solidifying technology.
Yet, because the size of point-like block is about round diameter 1.5 μ m usually, but moving, each point-like block all need drop on the laterally long brilliant scope of polysilicon, promptly in the 2 μ m, so mobile accuracy of the irradiation position of laser beam, must reach time micron grade, just have an opportunity after four laser radiations, promptly obtain the polysilicon grain (as Fig. 2 H shown in) of size near 5 μ m.
So, adopt general continuously transverse solidifying technology or point-like continuously transverse solidifying technology no matter be, all will be subject to the substrate or the strict demand of the mobile accuracy of laser beam, and significantly increase the board cost, and reduction processing procedure qualification rate, especially at the making of large tracts of land panel volume production equipment, more apparent difficulty.Even so adopt continuously transverse solidifying technology can promote the crystallization effect of existing laser crystallization technology, but still be unfavorable for the volume production use of polysilicon establishment of component.
Summary of the invention
One of purpose of the present invention provides a kind of manufacture method of polysilicon membrane, and the assembly that can be applicable to polycrystalline SiTFT or include polysilicon membrane is made.The method is to utilize the laser light irradiation silicon fiml with precipitous energy density gradient, make silicon fiml be easy to generate the solid-liquid interface, thereby bring out partly that the brilliant behavior of super horizontal length takes place silicon fiml, simultaneously, more cooperate heat retaining layer to be covered in assistant heating effect on the silicon layer, prolong the silicon fiml heated time, the crystal grain-growth when growing brilliant behavior so that promotion is horizontal more.Afterwards, repeatedly mobile laser beam is to the substrate diverse location, and irradiating laser is to finish the crystallization processing procedure of whole substrate.
According to above-mentioned purpose, the present invention proposes a kind of manufacture method of polysilicon membrane, it forms earlier resilient coating on substrate, form an amorphous silicon layer afterwards again, then, on amorphous silicon layer, form a heat retaining layer, wherein, the material of heat retaining layer is selected the film that laser beam is had the characteristic of partially absorbing for use, for example preferable silicon oxynitride film (SiOxNy) that can be.This heat retaining layer can make follow-up when carrying out the LASER HEATING processing procedure, and amorphous silicon layer is produced the effect that continues assistant heating, so, can effectively prolong the crystalline growth time of amorphous silicon layer, and the crystal grain particle diameter of laterally growing up is increased.
After heat retaining layer forms, promptly utilize laser beam with precipitous energy density gradient, carry out the LASER HEATING processing procedure, make partly silicon layer thawing, and then the brilliant behavior of super horizontal length takes place.
Wherein, above-mentioned laser beam with precipitous energy density gradient is to utilize figure photomask shaded portions LASER Light Source to form, and perhaps, laser beam is adjusted to the have narrow width line style light beam of (3～20 μ m) via optical system.Wherein, the figure photomask is for example to have rectangular slit pattern or square pattern.And the scope of precipitous energy density gradient can be 400J/cm
3～3000J/cm
3
Polysilicon membrane production method according to the invention described above, except delay polysilicon cooling time in conjunction with heat retaining layer, and bring out in the amorphous silicon layer by laser beam and to produce super horizontal long brilliant crystallization behavior with precipitous energy density gradient, more can utilize the mode that substrate moves or laser beam moves, make laser beam with precipitous energy density gradient, dropped on successively on the horizontal long brilliant crystal grain on the polysilicon layer, producing the brilliant behavior of successional horizontal length, and then continue to increase the crystallization particle diameter and grow up.
Be covered in structural design on the silicon layer owing to combine heat retaining layer among the present invention, can effectively prolong the postradiation crystalline growth time of silicon fiml Stimulated Light, thereby more help to make the crystallization particle diameter to increase.So, just can follow-up when carrying out step that substrate or laser beam move continuously, significantly increase the control range of the shift length of substrate or laser beam, strengthen process window, and then reduce the requirement of the accuracy that substrate or laser beam are moved.
So, by method of the present invention, not only available single-shot laser radiation produces that the laterally long brilliant distance of crystal grain reaches micron grade or even more than the 5 μ m, and, more can be when promoting polysilicon membrane making quality, the feasible productive rate of making obtains to promote, and when especially being applied to the thin-film transistor making of display driving, can help the development and the volume production of display large tracts of landization.
In addition, another effect of the inventive method is to reduce the polysilicon surface roughness, utilize heat retaining layer to be covered in structural design on the silicon layer, can be when the silicon fiml crystallization, the compacting polysilicon is in the projection of boundary, helping to reduce the roughness of polysilicon surface, and then obtain smooth polysilicon surface.
Description of drawings
For above-mentioned feature of the present invention, method, purpose and advantage are become apparent, in conjunction with the accompanying drawings, be illustrated as follows:
Fig. 1 is the photomask pattern of the laser beam of traditional point-like continuously transverse solidifying technology;
Fig. 2 A～2H is the crystallisation step schematic top plan view of traditional point-like continuously transverse solidifying technology;
Fig. 3 A～3C is the flow process generalized section of a kind of polysilicon membrane manufacture method of first preferred embodiment according to the present invention;
Fig. 4 A utilizes a kind of schematic diagram that the laser beam that relaxes the energy density gradient carries out crystallizing silicon layer that has;
Fig. 4 B utilizes a kind of laser beam with precipitous energy density gradient to carry out the schematic diagram of crystallizing silicon layer;
Fig. 5 A～5C is the part flow process schematic top plan view of a kind of polysilicon membrane manufacture method of first preferred embodiment according to the present invention;
Fig. 6 A～6C is the part flow process generalized section of a kind of polysilicon membrane manufacture method of second preferred embodiment according to the present invention;
Fig. 7 is the photomask pattern schematic diagram of laser beam of a kind of square shape continuously transverse solidifying technology of second preferred embodiment according to the present invention; And
Fig. 8 A～8E is the schematic top plan view of the long brilliant step of continuous transverse of a kind of polysilicon membrane of second preferred embodiment according to the present invention.
Description of reference numerals
111,122: the point-like photomask
205,805: the border
210,810: block
220,304a, 820: zone
212,214,216,812,814: the position
300,500,600: substrate
302,602: resilient coating
304,404,604: amorphous silicon layer
304b, 304c: crystal grain
306,606: heat retaining layer
320,620: laser beam
430: long brilliant length
504b、504c、604b、
604c, 604d, 604e: crystal grain
520,520 ': scope
613: hollow square zone
711,722: square shape photomask
Embodiment
The present invention proposes a kind of laterally method of long brilliant scope of polysilicon that increases.Utilize the use of heat retaining layer (heat-retaining layer), combine, increase the horizontal growth distance of polysilicon grain with the horizontal crystal growing technology that laser beam by precipitous energy gradient brings out.So, in the time of can significantly reducing the continuous transverse crystal growing technology and carry out, the mobile accuracy of substrate or laser beam, and process window is strengthened, in addition, more can under the condition of only using the single-shot laser radiation, promptly obtain the laterally long brilliant distance of crystal grain and reach the above polysilicon membrane of 5 μ m, make and then promote simultaneously quality and the productive rate that polysilicon membrane is made; Below will be described in detail method of the present invention with embodiment.
The present invention has disclosed a kind of manufacture method of polysilicon membrane, please in conjunction with reference Fig. 3 A～3C, Fig. 4 A, Fig. 4 B and Fig. 5 A～5C.Wherein, Fig. 3 A～3C is the flow process generalized section of a kind of polysilicon membrane manufacture method of first preferred embodiment according to the present invention, Fig. 4 A utilizes one to have the schematic diagram that the laser beam that relaxes the energy density gradient carries out crystallizing silicon layer, Fig. 4 B utilizes a laser beam with precipitous energy density gradient to carry out the schematic diagram of crystallizing silicon layer, then is the part flow process schematic top plan view of a kind of polysilicon membrane manufacture method of first preferred embodiment according to the present invention as for Fig. 5 A～5C.
At first, with reference to Fig. 3 A, be and form a resilient coating 302 and an amorphous silicon layer 304 in regular turn on substrate 300.Wherein, substrate 300 for example is a glass material, and resilient coating 302 then is preferably and for example selects silica for use, to reach the effect of isolated substrate 300 and amorphous silicon layer 304, to avoid the impurity in the substrate 300 amorphous silicon layer 304 is polluted.As for the formation method of amorphous silicon layer 304, be for example to adopt plasma-reinforced chemical vapor deposition (Plasma Enhanced ChemicalVapor Phase Deposition; PECVD) or physical vapor deposition (Physical VaporDeposition; PVD) technology.Also can carry out the dehydrogenation step to amorphous silicon layer 304 more in addition simultaneously, the quick-fried phenomenon of hydrogen can not occur in order to follow-up laser processing procedure.
Then, form a heat retaining layer 306, be covered on the amorphous silicon layer 304, wherein, the material of heat retaining layer 306 is to select the film that laser beam is had the characteristic of partially absorbing for use, for example preferable silicon oxynitride (SiOxNy) film that can be, this silicon oxynitride film can adopt the plasma-reinforced chemical vapor deposition fabrication techniques, and simultaneously, heat retaining layer 306 formed optimum thickness range can be 450nm to 600nm.
Then, shown in Fig. 3 B, utilization is patterned and has the laser beam 320 of precipitous energy density gradient, shine by heat retaining layer 306 tops, so that the ad-hoc location in the amorphous silicon layer 304 is produced the LASER HEATING effect, make in the amorphous silicon layer 304 in laser beam 320 ranges of exposures, form super horizontal long crystalline region territory 304a.Wherein, the laser beam 320 with precipitous energy density gradient can be by a figure photomask, or uses optical system to be adjusted to have narrow width the line style light beam of (3～20 μ m), distributes with the laser energy of producing precipitous energy density gradient; And simultaneously can laser beam 320 be patterned by the design of figure photomask, be radiated at ad-hoc location on the amorphous silicon layer 304 and can control laser beam 320.In addition, 320 excimer laser that for example can adopt chlorination xenon (XeCl) ultraviolet source of laser beam.
So, after laser beam 320 shines, the different Temperature Distribution of height will appear in the amorphous silicon layer 304, be subjected to the regional 304a of laser beam 320 irradiations, can become high temperature fused state, yet the scope of regional 304a side is the zone of not being excited light beam 320 irradiations, forms the state of relative low temperature.Thereby, bring out the crystallization behavior that results from the amorphous silicon layer 304, the position of the lower temperature of the regional 304a side of serving as reasons is begun, carry out laterally long brilliantly towards the inside of regional 304a, and then form laterally long Jingjing grain 304b and horizontal long Jingjing grain 304c (shown in Fig. 3 C).
In Fig. 3 B, the arrow indication is the laterally long brilliant direction of polysilicon, in addition, because present embodiment combines the assistant heating effect of heat retaining layer 306 simultaneously, and use with laser beam 320 of precipitous energy density gradient, so can promote the brilliant behavior of horizontal length of polysilicon more, and significantly increase laterally long brilliant crystallization particle diameter.For example adopt the method for present embodiment, can when laser beam 320 single fraction irradiations are to amorphous silicon layer 304, just make among the horizontal long crystalline region territory 304a, produce the above polysilicon of the laterally long about 5 μ m of brilliant distance of crystal grain.
Because using, the more special proposition of the present invention has the laser beam of precipitous energy density gradient to carry out the crystallization processing procedure of laser radiation, so can promote the brilliant effect of horizontal length of crystal silicon layer more.Can be respectively with reference to figure 4A and Fig. 4 B, in Fig. 4 A, shown when utilizing one to have the schematic diagram that the laser beam that relaxes the energy density gradient carries out crystallizing silicon layer, the energy density distribution situation of the laser beam that is to use that the first half in the schematic diagram is represented, and the Lower Half of schematic diagram, then demonstrate the brilliant behavior of horizontal length of crystal silicon layer 404, suppose as shown in Fig. 4 A, general laser crystallization processing procedure, be to use the laser beam of energy density gradient with mitigation, then the solid-liquid interface in the crystal silicon layer 404 can form more slowly, and the heat gap that is contained between liquid-state silicon that produces and the solid state si is also less, so the brilliant length of the super horizontal length that induces 430 is shorter.
Review Fig. 4 B, in Fig. 4 B, shown when utilizing a laser beam with precipitous energy density gradient to carry out the schematic diagram of crystallizing silicon layer, because precipitous energy gradient, can make crystal silicon layer 404 inner more or less freely and produce tangible solid-liquid interface apace, simultaneously, the heat gap that is contained between liquid-state silicon that produces and the solid state si is also relatively large, therefore, the temperature contrast of solid-liquid interface both sides is comparatively remarkable, so not only in crystal silicon layer 404, produce nucleating point (nucleation site) more easily, and induce the long brilliant length 430 of super horizontal length, have the preferable brilliant effect of super horizontal length in the crystal silicon layer 404 so will make.
The present invention cooperates more simultaneously and goes up the laser crystallization technology processing procedure that moves continuously except the use that proposes heat retaining layer and the laser beam with precipitous energy density gradient, promotes the super horizontal long Jingjing grain length degree of polysilicon more.In regular turn with reference to figure 5A～5C, Fig. 5 A～5C is the flow process schematic top plan view of crystallization processing procedure of the present invention, the shown vertical view that can be represented as Fig. 3 C of Fig. 5 A wherein, owing to covered heat retaining layer on the amorphous silicon layer, therefore, after the laser beam of the precipitous energy density gradient of tool exposes to amorphous silicon layer for the first time, just can be by the assistant heating effect of heat retaining layer, and in first time laser beam irradiation scope 520, form the polysilicon crystal that the particle diameter with super horizontal long Jingjing grain 504b and super horizontal long Jingjing grain 504c all is about 5 μ m.
Then, can begin substrate 500 or laser beam moves a distance, make the range of exposures 520 of laser beam, move on the scope that drops on arbitrary horizontal long Jingjing grain 504c with precipitous energy density gradient, become range of exposures 520 among Fig. 5 B ', to carry out the laser irradiation step second time.So, in Fig. 5 B, not only range of exposures 520 ' interior crystal silicon layer can then produce crystallization behavior, simultaneously, after the laser radiation first time established horizontal long Jingjing grain 504c originally, also will be subjected to the effect of laser radiation for the second time again because of the subregion, and fusion is once more taken place and bring out horizontal long brilliant behavior, so horizontal germination footpath 504c originally will more grow up, and increases super horizontal long brilliant scope.So for example can make the polysilicon grain of the crystallization particle diameter 5 μ m that produced after the laser radiation for the first time, and then increase the polysilicon grain that becomes particle diameter to 8 μ m, obtain the polysilicon membrane of the super large crystallite dimension as shown in Fig. 5 C.
Owing to be used heat retaining layer and design among the present invention jointly with laser beam of precipitous energy density gradient, therefore, after carrying out first laser radiation processing procedure, can form and have the polysilicon that the crystallization particle diameter reaches the above super horizontal long Jingjing grain of 5 μ m, so, can significantly increase this in implementing follow-up carry out for substrate or laser beam continuous when mobile, the distance range of required displacement, and the increase process window, with so reduce substrate moved or the requirement of the accuracy that laser beam moves.For example adopt the method for present embodiment, the accuracy that the substrate of continuous transverse crystal growing technology is moved reaches micron (μ m) grade and gets final product.
The present invention discloses the manufacture method of another kind of polysilicon membrane again, utilize square shape continuously transverse solidifying technology (square-SLS), while is in conjunction with the assistant heating effect of heat retaining layer, to produce the polysilicon membrane of the crystal grain that is similar to square and trend monocrystalline quality.
The second embodiment of the present invention please refer to shown in Fig. 6 A～6C, and is described as first embodiment, in the present embodiment, and a same resilient coating 602, an amorphous silicon layer 604 and the heat retaining layer 606 of on substrate 600, being coated with in regular turn earlier.Wherein, the material of heat retaining layer 606 is a silicon oxynitride.Then, with reference to Fig. 6 B, be and utilize laser beam 620 to carry out the LASER HEATING processing procedure, yet, different with first embodiment is that when carrying out the LASER HEATING processing procedure, the laser beam 620 with precipitous energy density gradient is to utilize the bridging effect of square shape photomask to form, so, contain the hollow square zone 613 that laser beam can't pass through in the laser beam 620.
Please be simultaneously in conjunction with reference to Fig. 7, Fig. 7 is the photomask pattern schematic diagram of laser beam of a kind of square shape continuously transverse solidifying technology of second preferred embodiment according to the present invention.In Fig. 7, square shape photomask 711 is in order to cover passing through of laser beam, to cover zone 722 in addition as for square shape photomask 711, then is in the LASER HEATING processing procedure, and laser beam reality can be by the scope of shining.So the effect of covering through photomask when laser is just can produce as hollow square shape among Fig. 6 B and laser beam 620 with precipitous energy density gradient.The block photomask of user compared to the advantage of point-like photomask is, in the outside, the corner of square shape, when polysilicon with radially radial kenel, outwards carry out laterally long when brilliant gradually, there is less border to produce, therefore in follow-up crystallization process, has bigger probability to form the monocrystalline crystalline state.
Because in the present embodiment, the design of also having adopted heat retaining layer to cover amorphous silicon layer, so, the brilliant behavior of horizontal length that can effectively assist crystal silicon layer after laser radiation, to produce equally, and improve laterally long brilliant length more, make formation crystal grain reach the above polysilicon of 5 μ m.With reference to figure 6C, be behind the LASER HEATING processing procedure, the actual zone that is subjected to laser radiation in the crystal silicon layer 604 just can grow horizontal long Jingjing grain 604b, crystal grain 604c, crystal grain 604d and crystal grain 604e.
Fig. 8 A～8E then is the schematic top plan view of the long brilliant step of continuous transverse of a kind of polysilicon membrane of second preferred embodiment according to the present invention.Through step, just can obtain the big crystal grain of polysilicon at last near the monocrystalline quality as Fig. 8 A～8E.
In Fig. 8 A, 820 expression general silicon layers actual positions that are subjected to laser beam irradiation, zone, square shape block 810 is then represented in the silicon layer because of square shape photomask covers, and is not excited the position of light beam irradiates.So after carrying out the laser radiation first time, the crystallization behavior of silicon layer, just the outer rim by square shape block 810 begins, and with radially radial kenel, outwards carries out laterally long brilliant gradually.Wherein, the arrangement on border 805 has demonstrated the brilliant direction of length and the structure of polysilicon, because the present invention has used heat retaining layer to be covered in the crystal silicon layer top, therefore, laterally long for the first time brilliant length is reached be about about 5 μ m.
Then, carry out moving of laser beam irradiation position for the first time, shown in Fig. 8 B, square shape block 810 is moved to position 812 (shown in the dotted line) according to the square diagonal, square shape block 810 is moved in arbitrary horizontal long brilliant scope, to carry out the laser energy irradiation second time.So crystal silicon layer the general begun by the outer rim of position 812 again, once more with radial kenel, the long brilliant behavior of continuous transverse outwards takes place, so that the crystal grain that generates can more be grown up for the first time, and reach the effect of eliminating part border 805 simultaneously, and then form the crystalline state shown in Fig. 8 C.
Then, mobile laser beam irradiation position for the second time, make square shape block 810 move to position 814 according to the square diagonal again by position 812, to drop in the laterally long brilliant scope of another polysilicon, and will there be very big probability to enable to allow square shape block 810 drop on just on the position of non-boundary, carry out laser irradiation step for the third time, shown in Fig. 8 D.Similarly, after laser radiation was for the third time carried out, crystal silicon layer inside will be begun by the outer rim of position 814, the long brilliant behavior of continuous transverse outwards takes place once more, so,, form the monocrystalline crystalline state shown in Fig. 8 E at last just can easily remaining border 805 be eliminated fully after the irradiation this time.
Owing to use the method for present embodiment, can be after the laser radiation first time, promptly form the crystal grain that horizontal long crystalline substance reaches 5 μ m, and the length and width of designed square shape block only are about 1.5 μ m in the present embodiment, therefore, though moving of each laser beam all need make square shape block drop in the laterally long brilliant scope of crystal silicon equally, but, no matter be the accuracy that moves for laser beam or substrate, all the requirement compared to traditional point-like continuously transverse solidifying (dot-SLS) technology is low, as long as reach micron grade.And, more can effectively reduce the number of times that laser or substrate move continuously, also can reduce the actual number of times that shines of laser beam, promptly successfully obtain to have super horizontal long brilliant big crystal grain or monocrystalline crystalline texture.Simultaneously, by the method for present embodiment, can obtain the about 10 μ m of crystallization particle diameter above polycrystalline or single grain at last.
By the embodiment of the invention described above as can be known, use method of the present invention, not only can be by having the laser beam irradiation of precipitous energy density gradient, make and produce super horizontal long brilliant crystallization behavior in the amorphous silicon layer, simultaneously, the present invention cooperates heat retaining layer to be covered in structural design on the silicon layer, utilizes the lasting heat effect of heat retaining layer, can prolong the postradiation crystalline growth time of crystal silicon layer Stimulated Light, then more help to make the crystallization particle diameter to increase again.
In addition, more utilize the mode that substrate moves or laser beam moves, make laser beam be dropped on the diverse location of substrate successively, to finish the crystallization processing procedure of whole substrate.As the drop point of laser beam on silicon layer all being controlled in the laterally long brilliant scope of crystal grain,, then can further increase the crystallization particle diameter so that crystallization behavior can be grown up continuously.
Because the present invention cooperates heat retaining layer to be covered in structural design on the crystal silicon layer, help to make the crystallization particle diameter to increase, so, when carrying out the continuously transverse solidifying process, and continuously when moving substrate or laser beam, can significantly increase the scope of substrate or laser beam shift length, and increase productive rate and effectively strengthen process window, with so that reduce the requirement of the accuracy that substrate or laser beam are moved; Or even can reduce laser or the mobile continuously number of times of substrate palpus, that is effectively reduce the actual number of times that shines of laser beam, and then reduce and make flow process and cost.So, no matter be general continuously transverse solidifying technology or the point-like continuously transverse solidifying technology of development, can both be by method of the present invention, and significantly increase the quality and the productive rate of polysilicon membrane making.Reach more than the micron grade except effectively producing crystallite dimension, and outside the polysilicon membrane that significantly reduces of number of boundary, even can obtain more than crystallite dimension to the 10 μ m high-quality polysilicon membrane near the monocrystalline attitude.
Therefore, if the manufacture method of polysilicon membrane of the present invention is applied to must help to produce the subassembly product of high-performance, high additive value in the manufacturing of polycrystalline SiTFT, simultaneously, also help the development and the volume production of display large tracts of landization more.
Method of the present invention is not only limited on the film crystal pipe manufacturer that is used in flat-panel screens, and the manufacturing of any polycrystalline SiTFT driven unit and the making of polysilicon membrane all can utilize method of the present invention and promote product usefulness.Though the present invention discloses as above with embodiment; yet it is not in order to limit the present invention; any people who has the knack of this technology; without departing from the spirit and scope of the present invention; should do various changes and modification, so protection scope of the present invention should be looked appended being as the criterion that claim scope defined.
Claims (8)
1. the manufacture method of a polysilicon membrane comprises at least:
Form a silicon layer on a substrate;
Form a heat retaining layer on described silicon layer, wherein this heat retaining layer is the whole end faces that directly touch this silicon layer;
Patterning one laser beam, at least one laser beam that is patterned that has a precipitous energy density gradient with formation, wherein this precipitous energy density gradient is the whole edges that occur in this laser beam that is patterned, and the scope of described energy density gradient is from 400J/cm
3To 3000J/cm
3
This laser beam that is patterned that irradiation has this precipitous energy density gradient is to this heat retaining layer, and to carry out a LASER HEATING processing procedure, the brilliant behavior of super horizontal length takes place described silicon layer to bring out partly; And
Repeatedly move this laser beam that is patterned to this substrate diverse location, to shine this laser that is patterned till whole illuminated the finishing of this silicon layer, wherein this laser beam that is patterned is by repeating to move whole end faces that can shine this heat retaining layer.
2. method according to claim 1 is characterized in that, before the formation step of described silicon layer, more comprises formation one resilient coating on described substrate.
3. method according to claim 1 is characterized in that the material of described substrate is a glass.
4. method according to claim 1 is characterized in that, described heat retaining layer is silicon oxynitride (SiOxNy).
5. method according to claim 1 is characterized in that, described LASER Light Source with precipitous energy density gradient is to use the excimer laser of chlorination xenon (XeCl) ultraviolet source.
6. method according to claim 1 is characterized in that, the described described laser beam that is patterned with precipitous energy density gradient is to utilize a figure photomask, and the described laser beam of its shaded portions is formed; Maybe this laser beam is formed via the light beam that an optical system is adjusted to narrow width.
7. method according to claim 1 is characterized in that, the described laser beam that is patterned is to have rectangular pattern or hollow square shape pattern.
8. method according to claim 1 is characterized in that, moving of the described laser beam that is patterned comprises the described laser beam that is patterned is moved, or described substrate is moved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510131794 CN100550301C (en) | 2005-12-14 | 2005-12-14 | The manufacture method of polysilicon membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510131794 CN100550301C (en) | 2005-12-14 | 2005-12-14 | The manufacture method of polysilicon membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1983521A CN1983521A (en) | 2007-06-20 |
| CN100550301C true CN100550301C (en) | 2009-10-14 |
Family
ID=38165946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510131794 Expired - Fee Related CN100550301C (en) | 2005-12-14 | 2005-12-14 | The manufacture method of polysilicon membrane |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100550301C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185028B (en) * | 2011-04-07 | 2014-04-16 | 浙江昱辉阳光能源江苏有限公司 | Manufacturing method of surface texture of P-type oversized-crystalline-grain polycrystalline silicon solar battery |
-
2005
- 2005-12-14 CN CN 200510131794 patent/CN100550301C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1983521A (en) | 2007-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW569350B (en) | Method for fabricating a polysilicon layer | |
| US6573163B2 (en) | Method of optimizing channel characteristics using multiple masks to form laterally crystallized ELA poly-Si films | |
| US6590228B2 (en) | LCD device with optimized channel characteristics | |
| US6755909B2 (en) | Method of crystallizing amorphous silicon using a mask | |
| US8012861B2 (en) | Systems and methods for preparing epitaxially textured polycrystalline films | |
| US7364955B2 (en) | Methods of manufacturing semiconductor devices having single crystalline silicon layers | |
| CN1319178C (en) | Thin film transistor and manufacturing method thereof | |
| JP2002237455A (en) | Silicon crystallization apparatus and method therefor | |
| KR100507553B1 (en) | Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof | |
| JP2017507886A (en) | Method for synthesizing large area graphene using pulsed laser on metal crystalline substrate | |
| TWI575571B (en) | Systems and methods for non-periodic pulse partial melt film processing | |
| KR20040085310A (en) | Method of crystallization | |
| US6635555B2 (en) | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films | |
| US20070155067A1 (en) | Method of fabricating polycrystalline silicon film and method of fabricating thin film transistor using the same | |
| TWI280292B (en) | Method of fabricating a poly-silicon thin film | |
| CN100550301C (en) | The manufacture method of polysilicon membrane | |
| US20060211262A1 (en) | Methods of laterally forming single crystalline thin film regions from seed layers | |
| US5821135A (en) | Methods for and applications of making buried structures in semiconductor thin films | |
| US20080194083A1 (en) | Methods of Laterally Forming Single Crystalline Thin Film Regions from Seed Layers | |
| JP2007335865A (en) | Method of manufacturing gate thin film transistor | |
| JP2809152B2 (en) | Method for manufacturing thin film transistor | |
| JP3955959B2 (en) | Laser irradiation apparatus and laser irradiation method | |
| US8426296B2 (en) | Systems and methods for preparing epitaxially textured polycrystalline films | |
| CN100433242C (en) | Method for producing low-temperature polycrystalline silicon thin membrane | |
| KR20120106030A (en) | Selective thin film crystalization method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091014 Termination date: 20181214 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |