CN100549792C - Has liquid crystal on silicon (LCOS) display device of colorful array of pixels and preparation method thereof - Google Patents
Has liquid crystal on silicon (LCOS) display device of colorful array of pixels and preparation method thereof Download PDFInfo
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- CN100549792C CN100549792C CNB2007101082352A CN200710108235A CN100549792C CN 100549792 C CN100549792 C CN 100549792C CN B2007101082352 A CNB2007101082352 A CN B2007101082352A CN 200710108235 A CN200710108235 A CN 200710108235A CN 100549792 C CN100549792 C CN 100549792C
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Abstract
The invention provides a kind of method for making with liquid crystal on silicon (LCOS) display device of colorful array of pixels, it is by between different chromatic filter layers the reflection horizon being set, and be used as etching stopping layer between the chromatic filter layer, and utilize etch process in each time pixel, to define different colorized optical filtering layer patterns with the reflection horizon.
Description
Technical field
(liquid crystal on silicon, LCoS) display device relate in particular to a kind of reflection type color LCoS display device to the present invention relates to a kind of colored liquid crystal on silicon.
Background technology
The LCoS display device is the gordian technique of reflecting liquid crystal projector (reflective LCoS projector) and back projection TV (rear-projection television).LCoS display device biggest advantage is to be significantly to reduce the panel production cost and volume is light, thin, short, little, has advantages such as high-res and low-power simultaneously in addition.LCoS display device and general thin-film transistor LCD device (thinfilm transistor-liquid crystal display, TFT-LCD) difference is that the TFT-LCD upper and lower surface all is as substrate (substrate) with glass, but above only having, adopts the LCoS display panel glass, beneath substrate then is based on semiconductor material (for example silicon), therefore, the technology of LCoS display panel is in conjunction with conventional liquid crystal and semiconductor CMOS (Complementary Metal Oxide Semiconductor) (complementary metal-oxide semiconductor, CMOS) technology of technology in fact.
The primary structure of LCoS display device can be divided into light source module, LCoS display panel, divide photosynthetic photosystem etc.Generally speaking, the LCoS display can be divided into three-chip type (three-panel) and one chip (single panel) two big classes according to the design of light engine.The three-chip type light engine is a light beam that light source is produced after Amici prism is divided into red, blue, green glow, respectively light beam is throwed again into three LCoS panels, at last with the image three-colo(u)r that projects through closing in addition combination of photosystem, to form coloured image.The one chip light engine is to utilize look runner (color wheel) with white light formation red, blue, green glow in proper order, and with this optics primaries and red, blue, the green picture that drives the formula generation, form color separated image synchronously, the characteristic that persists by human eye vision produces colored projected picture at human brain at last again.
From the above, seldom make colorful array of pixels on the known LCoS display panel with different colours chromatic filter layer, its reason is to use the micro color filter of inorganic dichroic coating that bottlenecks such as technical difficulty height and cost of manufacture height are arranged on making, therefore traditional single LCoS display panel can't become optics three primary colors or other coloured light green, red, blue light to produce colour picture natural light or white light source beam split, but must be dependent on aforesaid look runner or divide photosynthetic photosystem and the multi-disc LCoS display panel of arranging in pairs or groups just can demonstrate colour picture.So known LCoS display device must comprise multi-disc LCoS display panel and complicated light engine, has significantly improved cost of manufacture, also can't satisfy the market demand of shorten product sizes.
By United States Patent (USP) cases 4 that the people proposed such as Gale, 534, once mentioned for No. 620 and utilize color separation membrane stack such as yellow, green or dark green to make penetration color-code chromatic filter layer, but because the etching selectivity of different colours dichroic coating is low, therefore must use complicated technology, for example utilize dry ecthing and wet etching process simultaneously, and cooperate the etched dichroic coating skin-material of specific moisture-resistant, just can produce yellow, cyan or the dark green dichroic coating stacked structure of given shape.In addition, Iisaka proposes United States Patent (USP) case the 7th in addition, 121, No. 669, colorful array of pixels is made in exposure on liquid crystal indicator, its production method is in the first deposition ground floor colored filter of transparency carriers such as glass or quartz, after this colored filter is carried out etching and defines pattern, form a thicker hyaline layer interbed (transmissiveinterlayer) above it, on this hyaline layer interbed, form second layer colored filter again.Then, form another thick hyaline layer interbed then above it to the etching of second layer colored filter.So repeat technology for several times, comprise that at least three layers of colored filter add the chromatic filter layer structure of the thickness of threeply hyaline layer interbed and on transparency carrier, produce.Therefore, the technology that Iisaka instructed is complicated, cause cost of manufacture to improve, and chromatic filter layer structure gross thickness is thicker, also can't satisfy the demand of dwindling sized display.
From the above, industry still lacks the advanced technology of producing the polychrome micro color filter with simple process on semiconductor substrate, and the technology of therefore producing colorful array of pixels on single LCoS display device still is the continuous subject under discussion of inquiring into of industry.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of LCoS display device with colorful array of pixels and preparation method thereof, needs the problem of complicated light engine and multi-disc LCoS display panel to improve known LCoS display device.
According to the present invention, disclosed a kind of method for making with LCoS display device of colorful array of pixels.The semiconductor substrate at first is provided, on the semiconductor-based end, forms one first reflection horizon, one first chromatic filter layer, one second reflection horizon and one second chromatic filter layer then in regular turn.Form one first patterned layer on second chromatic filter layer, it has one first and exposes to the sun as the zone.Then remove part second chromatic filter layer that exposed by first patterned layer and second reflection horizon to form one first opening.Remove this first patterned layer then, in this first opening, form one first flatness layer, with the semiconductor-based basal surface of planarization.
According to the present invention, other provides a kind of method for making of LCoS display device, the semiconductor substrate at first is provided, on the semiconductor-based end, forms one first reflection horizon, one first chromatic filter layer, one second reflection horizon, one second chromatic filter layer, one the 3rd reflection horizon and one the 3rd chromatic filter layer more in regular turn.Then, form one first patterned layer on the 3rd chromatic filter layer, it comprises that one first exposes to the sun as the zone, then carries out one first etch process, remove part the 3rd chromatic filter layer and the 3rd reflection horizon that expose by first patterned layer, and in the 3rd chromatic filter layer, form one first opening.Then, form one second patterned layer on the 3rd chromatic filter layer, it comprises that one second exposes to the sun as the zone.Carry out one second etch process then, remove part the 3rd chromatic filter layer and the 3rd reflection horizon that expose by second patterned layer, to form one second opening.At last, in first opening or second opening, form one first flatness layer.
According to the present invention, disclose a kind of LCoS display device again in addition, it includes: the semiconductor substrate, its surface definition has pixel a plurality of times, forms a colorful array of pixels; One first reflection horizon, one first chromatic filter layer, one second reflection horizon, one second chromatic filter layer, one the 3rd reflection horizon and one the 3rd chromatic filter layer are located on this semiconductor-based end in regular turn.This second chromatic filter layer and this second reflection horizon have one first opening, corresponding to this semiconductor suprabasil a pixel for the first time, and the 3rd chromatic filter layer and the 3rd reflection horizon have one second gap opened, corresponding to the suprabasil pixel for the first time of this semiconductor with one the second time pixel.
Because the present invention is provided with the reflection horizon between each chromatic filter layer, and be used as etching stopping layer between the chromatic filter layer with the reflection horizon, therefore can utilize etch process and in each time pixel, define different colorized optical filtering layer patterns, produce colorful array of pixels on the LCoS display panel with simple process.
Description of drawings
Fig. 1 to Fig. 7 has the synoptic diagram of first embodiment of the LCoS display device method for making of colorful array of pixels for the present invention;
Fig. 8 to Figure 13 has the synoptic diagram of second embodiment of the LCoS display device method for making of colorful array of pixels for the present invention;
Figure 14 to Figure 18 is the process schematic representation of the 3rd example of LCoS display panel of the present invention;
Figure 19 to Figure 22 is the process schematic representation of the 4th example of LCoS display panel of the present invention.
The main element symbol description
Reflection horizon, the 10 semiconductor-based ends 12 first
14 first dichroic coatings, 16 first cushions
18 second reflection horizon, 20 second dichroic coatings
22 second cushions, 24 first patterned layer
26 first expose to the sun as zone 28 first openings
30 first flatness layers 32 the 3rd reflection horizon
34 the 3rd dichroic coatings, 36 second patterned layer
38 second expose to the sun as zone 40 second openings
42 second flatness layers, 44 colorful array of pixels
46 pixel 48 pixels for the second time for the first time
50 pixel 52 transparency carriers for the third time
54 liquid crystal layers, 56 transparency conducting layers
58 pixel electrodes, 60 contact elements
62 contact holes, 64 contact plungers
66 contact elements, 68 contact plungers
70 pixel electrodes, 72 pixel electrodes
74,78 alignment films, 80 LCoS display panels
Reflection horizon, the 100 semiconductor-based ends 102 first
104 first chromatic filter layers, 106 second reflection horizon
108 second chromatic filter layers 110 the 3rd reflection horizon
112 the 3rd chromatic filter layers 114 are pixel for the first time
116 pixel 118 pixels for the third time for the second time
120 colorful array of pixels, 122 first patterned layer
124 first expose to the sun as regional 126 openings
128 second patterned layer 130 second are exposed to the sun as the zone
132 openings, 134 flatness layers
136 pixel electrodes, 138 contact elements
140 contact plungers, 142 first cushions
144 contact elements, 146 contact plungers
148 second cushions, 150 first flatness layers
152 second flatness layers, 154 pixel electrodes
Embodiment
Please refer to Fig. 1 to Fig. 7, Fig. 1 to Fig. 7 has the synoptic diagram of first embodiment of the LCoS display device method for making of colorful array of pixels for the present invention.In the present embodiment, the LCoS display device is a reflection type color LCoS display device.At first as shown in Figure 1, semiconductor substrate 10 is provided, for example be that its surface of a silicon base comprises a plurality of image element circuits and electronic component (not shown), then, form one first reflection horizon 12, one first dichroic coating 14, one first cushion 16, one second reflection horizon 18 and one second dichroic coating 20 in surface, the semiconductor-based ends 10 in regular turn.Wherein first and second reflection horizon 12,18 can comprise the metal material of tool electric conductivity, makes the reflection horizon 12 of winning can be used as time pixel electrode and uses.First dichroic coating 14 and second dichroic coating 20 are to be used separately as one first chromatic filter layer and the use of one second chromatic filter layer, can comprise highly reflecting films layer or dichroic coating material.In addition, first and second dichroic coating 14,20 is preferably inorganic dichroic coating, can comprise that inorganic material such as titania and silicon dioxide are piled up in varing proportions to form.Moreover, also alternative one second cushion 22 that forms on second dichroic coating, 20 surfaces.It should be noted that, first and second cushion 16, the 22nd, be located between first dichroic coating 14 and second reflection horizon 18 respectively and between the 3rd reflection horizon of second dichroic coating 20 and follow-up making, main effect be after etch process in pooling feature is provided, its material can comprise respectively and is same as first and second dichroic coating 14,20 material, for example the material of first cushion 16 can be same as the skin-material of first dichroic coating 14, therefore when making first dichroic coating 14 and first cushion 16, first dichroic coating 14 can be made into and be slightly thicker than original preset thickness, and additional part is considered as first cushion 16.Yet first and second cushion 16,22 also can comprise the material that is different from first and second dichroic coating 14,20, for example comprises epoxy resin (epoxy), is condition not influence optical effect and to have high etching selectivity with the reflection horizon.Moreover, in other embodiments, also can omit and make first and second cushion 16,22, and directly second reflection horizon 18 is made on first dichroic coating 14.
Then, as shown in Figure 2, on the semiconductor-based end 10, form one first patterned layer 24, it can comprise organic material or photo anti-corrosion agent material, on photo anti-corrosion agent material, define the one first picture zone 26 of exposing to the sun via photoetching process, can be corresponding at least one first time of pixel 46 (being shown in Fig. 6) at the semiconductor-based end 10.Then, be used as etching mask, remove via first of first patterned layer 24 and expose to the sun as zone 26 parts that exposed, second cushion 22, second dichroic coating 20 and second reflection horizon 18 with first patterned layer 24.In the present embodiment, because second cushion 22 and second dichroic coating 20 comprise identical materials, therefore second cushion 22 can remove via etch process with second dichroic coating 20, exposes part second reflection horizon 18.Afterwards, remove second reflection horizon 18 that is exposed by second dichroic coating 20 with different etchants again, until exposing first cushion 16 or first dichroic coating 14, and in second dichroic coating 20 and second reflection horizon 18, form one first opening 28.In the present embodiment, the step that removes part second reflection horizon 18 may remove a spot of first cushion 16 simultaneously, and etching is stopped in first cushion 16, can't reduce the thickness of first dichroic coating 14.Yet, because second reflection horizon 18 comprises metal material, with first dichroic coating 14 or first cushion 16 higher etching selectivity should be arranged, therefore if can well control the etch process in second reflection horizon 18, make its material that removes the below hardly, then can not need on first dichroic coating 14, to make first cushion 16.
Then, please refer to Fig. 3, remove first patterned layer 24, in first opening 28, insert one first flatness layer 30 again, be located on the surface of first dichroic coating 14 or first cushion 16, wherein first flatness layer 30 can comprise the material that is same as first dichroic coating 14 or first cushion 16, and it can depositional mode form in surface, the semiconductor-based ends 10 comprehensively, removes unnecessary first flatness layer, 30 materials in the polishing mode more afterwards.In other embodiments, if do not make one second cushions 22 before, then can utilize first flatness layer, 30 (not shown) that are higher than second dichroic coating, 20 surfaces to be used as second cushion 22 on second dichroic coating, 20 surfaces.
Please refer to Fig. 4,, comprise the dichroic coating material, the 3rd dichroic coating 34 as shown in FIG. in first flatness layer 30 and second cushion 22 or second dichroic coating formation one the 3rd reflection horizon 32,20 surface and the chromatic filter layer.Similarly, the material in the 3rd reflection horizon 32 can be same as the material in first or second reflection horizon 12,18, for example comprises the material of metal material or other tool reflectivity and electric conductivity.The 3rd dichroic coating 34 preferably includes inorganic dichroic coating material, and for example titania, silicon dioxide etc. pile up in varing proportions and forms.Then, make one second patterned layer 36 on the 3rd dichroic coating 34, it can be formed by organic or photo anti-corrosion agent material.Second patterned layer 36 comprises the one second picture zone 26 of exposing to the sun, picture zone 38 and first of exposing to the sun, can define out via photoetching process, and expose the 3rd dichroic coating 34, wherein second expose to the sun picture zone 38 can be corresponding at least one second time of pixel 48 (being shown in Fig. 6) at the semiconductor-based end 10.
Then, as shown in Figure 5, utilize second patterned layer 36 to be used as mask and to carry out an etch process, remove part the 3rd dichroic coating 34 and the 3rd reflection horizon 32 that are exposed by second patterned layer 36, until exposing second cushion 22 or stop at second dichroic coating, 20 surfaces, and in the 3rd dichroic coating 34 and the 3rd reflection horizon 32, form one second opening 40.As shown in Figure 6, remove second patterned layer 36, on second dichroic coating 20 that exposes or second cushion 22, form one second flatness layer 42.The method for making of second flatness layer 42 can depositional mode forms in surface deposition of the semiconductor-based ends 10, inserts simultaneously in second opening 40, removes unnecessary part in the polishing mode more afterwards, so that the having an even surface of the semiconductor-based end 10.So, just finish the enamel making of filter layer of the colored LCoS display device of the present invention, form colorful array of pixels 44.
In the present embodiment, when light source during by first, second and the 3rd dichroic coating 14,20,34, can be by the dichroic coating filtration of material and penetrate with the light of different wavelength range, for example be respectively green glow, ruddiness and blue light, therefore after light is by colorful array of pixels 44 top incidents, can be respectively by first, second or 12,18,32 reflections of the 3rd reflection horizon of the superiors, pass first, second or the 3rd dichroic coating 14,20,34 of the superiors and form green glow, ruddiness and blue light respectively.So, the part that has first, second or the 3rd dichroic coating 14,20,34 on the surface, the semiconductor-based ends 10 can be defined as the pixel 46 first time of colorful array of pixels 44, pixel 48 and pixel 50 (remaining the 3rd dichroic coating 34 is promptly corresponding to pixel 50 for the third time behind the etch process) for the third time for the second time respectively, and utilizes first reflection horizon 12 of serving as pixel electrode to link to each other with MOS transistor or other elements to fetch the generation coloured image.
Then, as shown in Figure 7, other provides a transparency carrier 52, for example is a glass substrate or quartz base plate, and its surface comprises a transparency conducting layer 56, for example is an indium tin oxide layer.To have the surface of colorful array of pixels 44 towards transparency carrier 52 at semiconductor-based the end 10, and make transparency carrier 52 and the semiconductor-based end 10 parallel relative and make up, for example transparency carrier 52 is fixed at semiconductor-based the end 10 with frame glue, pour into liquid crystal molecule in transparency carrier 52 and again at the semiconductor-based end 10, form liquid crystal layer 54, just finish the making of LCoS display panel 80 of the present invention.In addition, in order to control the orientation of liquid crystal molecule, can form an alignment film 74,78 (alignment film 78 promptly is formed on second flatness layer 42) respectively at the inner surface at the transparency carrier 52 and the semiconductor-based end 10.
It should be noted that, in the first embodiment of the present invention, be on same LCoS display panel 80, to produce colorful array of pixels 44 with at least three kinds of colors, be applied in the one chip LCoS display, therefore on the semiconductor-based end 10, need to be provided with three layers of dichroic coating (first, the second and the 3rd dichroic coating 14,20,34), and the formation degree of depth differs in dichroic coating via second etch first opening 28 and second opening 40, so that first, the second and the 3rd dichroic coating 14,20,34 are not becoming the dichroic coating on top layer at the semiconductor-based end 10 in the homogeneous pixel respectively, and light is penetrated with different colours.Yet,, can on the 3rd dichroic coating 34, form other dichroic coatings in addition, and repeat similar technology if need the colorful array of pixels of more colors.
Moreover, the method for making of colorful array of pixels of the present invention also can be applicable to use in the LCoS display more than two, for example on a slice LCoS display panel, produce the colorful array of pixels that has only two kinds of colors, as comprise the colorful array of pixels of green/red or green, cooperate LCoS display panel and light engine again, produce coloured image with other color filter layers.In addition,,, then only need carry out one time etch process, get final product and make panel surface have different dichroic coatings according to the inventive method if will on a slice LCoS display panel, make the colorful array of pixels that only has two kinds of colors.With the first embodiment of the present invention is example, and the method with LCoS display panel of double color pel array only need comprise the technology of Fig. 1 to Fig. 3.
Because the present invention mainly is provided in to make on the same LCoS display panel production method of colour element matrix, therefore the method for making of pixel electrode or image element circuit is not an emphasis of the present invention, yet, in order to make the reader understand combining and application of colour element matrix method for making of the present invention and image element circuit technology, will be in Fig. 8 to 10 simple declaration comprise the colour element matrix method for making of contact plunger element.For ease of the explanation, graphic in each element be the component symbol of continuing to use Fig. 1 to Fig. 6.
Please refer to Fig. 8, semiconductor substrate 10 at first is provided, define pixel thereon a plurality of times, to form a pel array, for example for the first time pixel 46, pixel 48 and pixel 50 for the third time for the second time.Surface, the semiconductor-based ends 10 comprises a plurality of image element circuits (figure does not show), is located at respectively in each time pixel.Then, form one first reflection horizon 12 in surface, the semiconductor-based ends 10, it comprises a pixel electrode 58 and at least one contact element 60, a connection gasket for example, be located at second or for the third time in the pixel 48,50 (demonstrate among the figure second with have a contact element 60 respectively in the pixel 48,50 for the third time), and pixel electrode 58 does not contact with contact element 60 corresponding to pixel 46 first time.Pixel electrode 58 can comprise that with the generation type of contact element 60 elder generation forms first reflection horizon 12 on surface, the semiconductor-based ends 10 comprehensively, carries out a photoetching and etch process, afterwards to produce pixel electrode 58 and contact element 60.Then, form one first dichroic coating 14 in surface, the semiconductor-based ends 10, its surface can comprise a cushion (figure does not show).
Please refer to Fig. 9, carry out another photoetching and etch process, in part first dichroic coating 14 of contact element 60 tops, form contact hole 62, within contact hole 62, insert conductive material again, to form contact plunger 64 in first dichroic coating 14.Then, as shown in figure 10, form one second reflection horizon 18 in surface, the semiconductor-based ends 10, its pattern is corresponding to the first time pixel 46 and pixel 48 for the second time, and comprise a contact element 66, be located at contact plunger 62 tops in the pixel for the third time 50, and be electrically connected with contact element 60 by contact plunger 64.Afterwards, form one second dichroic coating 20 in surface, the semiconductor-based ends 10 comprehensively, and, be electrically connected on contact element 66 and contact element 60 in wherein forming a contact plunger 68.
Please refer to Figure 11, then in 10 surface coated, one first photoresist layer of the semiconductor-based end as first patterned layer 24, it comprises the first picture zone 26 of exposing to the sun, corresponding to pixel 46 first time.Carry out an etch process then,,, and in second dichroic coating 20, form one first opening 28, be located in the pixel 46 first time until first dichroic coating, 14 surfaces via first second dichroic coating 20 and second reflection horizon 18 of exposing to the sun and going out as regional 26 etch exposed.And the second remaining reflection horizon 18 is positioned at the part of pixel 48 for the second time, then is considered as the pixel electrode 70 of pixel 48 for the second time, and it is electrically connected on contact element 60 by contact plunger 64.
Then, as shown in figure 12, remove first patterned layer 24, on the semiconductor-based end 10, form one first flatness layer 30, insert simultaneously in first opening 28.Afterwards, form one the 3rd reflection horizon 32 and one the 3rd dichroic coating 34 in surface, the semiconductor-based ends 10 in regular turn.Please refer to Figure 13 then, form one second patterned layer (figure does not show) on the 3rd dichroic coating 34, it comprises first and second picture zone 26,38 of exposing to the sun, and exposes the 3rd dichroic coating 34 in first and second time pixel 46,48.Be used as etching mask with second patterned layer, carry out an etch process, remove part the 3rd dichroic coating 34 that exposed by second patterned layer and the 3rd reflection horizon 32 of below thereof, until second dichroic coating, 20 surfaces, and in the 3rd dichroic coating 34, form one second opening 40, corresponding to first and second time pixel 46,48.At last, in second opening 40, insert second flatness layer 42.Just finish the making of colorful array of pixels 44.Wherein, the 3rd remaining reflection horizon 32 is corresponding to pixel 50 for the third time, and is electrically connected on contact element 60 via contact plunger 68, is used for being used as pixel electrode 72 and uses.
In other embodiments of the invention, can be earlier first, second, third dichroic coating and first, second and the 3rd reflection horizon be made at semiconductor-based the end, carry out etching again, define the dichroic coating pattern in each time pixel.Please refer to Figure 14 to Figure 18, Figure 14 to Figure 18 is the process schematic representation of the 3rd example of LCoS display panel of the present invention.At first, as shown in figure 14, semiconductor substrate 100 is provided, its surface comprises a plurality of image element circuits or electronic component (figure does not show), and definition has a plurality of first time of pixel 114, pixel 116 and pixel 118 for the third time for the second time, expression is used to provide the light of different colours respectively, to form a colorful array of pixels 120.Form one first reflection horizon 102, one first chromatic filter layer 104, one second reflection horizon 106, one second chromatic filter layer 108, one the 3rd reflection horizon 110 and one the 3rd chromatic filter layer 112 in surface, the semiconductor-based ends 100 in regular turn then.Wherein, first, second and the 3rd chromatic filter layer 104,108,112 can comprise inorganic dichroic coating material, and first and second chromatic filter layer 104,108 top alternatives comprise one first and one second cushion (figure does not show) respectively, the material or the other materials that can be same as first and second chromatic filter layer 104,108 are made, optical effect with the dichroic coating below not influencing is a condition, it is used for providing a pooling feature at 106,110 o'clock in second, third reflection horizon of subsequent etch, avoids injuring the dichroic coating material of below.
Then, as shown in figure 15, form one first patterned layer 122 in the 3rd chromatic filter layer 112 tops, it comprises the one first picture zone 124 of exposing to the sun, and exposes corresponding to pixel 114 part the 3rd chromatic filter layer 112 first time.Be used as etching mask with first patterned layer 122 then, carry out one first etch process, remove part the 3rd chromatic filter layer 112 that exposed by first patterned layer 122 with and the 3rd reflection horizon 110 of below, until second chromatic filter layer, 108 surfaces, among the 3rd chromatic filter layer 112, form an opening 126 simultaneously, expose to the sun as zone 124 corresponding to first.
Then, please refer to Figure 16, the alternative flatness layer (figure does not show) of inserting in opening 126 makes the semiconductor-based end 100 have a smooth surface, the rough surface that is parallel to the 3rd chromatic filter layer 112.Perhaps, can be directly form one second patterned layer 128 in surface, the semiconductor-based ends 100, it comprises the one second picture zone 130 of exposing to the sun, and exposes corresponding to pixel 116 part the 3rd chromatic filter layer 112 second time.Then, as shown in figure 17, be used as etching mask with second patterned layer 128, carry out one second etch process, remove the 3rd chromatic filter layer 112, the 3rd reflection horizon 110, second chromatic filter layer 108 and second reflection horizon 106 that expose, until first chromatic filter layer, 104 surfaces, among the 3rd and second chromatic filter layer 112,108 and the 3rd and second reflection horizon 110,106, form an opening 132.
Please refer to Figure 18, remove second patterned layer 128, in opening 132 and opening 126, form a flatness layer 134 then.Its method for making can deposit a flatness layer material (figure does not show) in surface, the semiconductor-based ends 100 comprehensively, and then in the polishing mode, the flatness layer material that will be higher than the 3rd chromatic filter layer 112 removes, and makes surperficial rough the 3rd chromatic filter layer 112 that is same as of flatness layer material.Wherein, the material of flatness layer 134 can comprise the material of first, second or the 3rd chromatic filter layer 104,108,112, for example comprises that inorganic material such as silicon dioxide or titania or other do not influence the material of the optical effect of first, second or the 3rd chromatic filter layer 104,108,112.
Therefore, light by colorful array of pixels 120 top incidents, can be respectively upwards penetrated by the second, first or the 3rd reflection horizon 106,102,110 reflections on top layer, present respectively each first, second with pixel 114,116,118 for the third time in colored light after the second, first or the 3rd chromatic filter layer 108,104,112 color separations of the superiors, for example be ruddiness, blue light and green glow.
In other embodiments of the invention, aforementioned second etch process also can only be etched to the 3rd reflection horizon 110 promptly to be stopped, and makes the top layer of first, second time pixel 114,116 be all second chromatic filter layer 108.In the case, the light that is upwards reflected by colorful array of pixels 120 only can produce two kinds of colored light of corresponding second chromatic filter layer 108 and the 3rd chromatic filter layer 112.Therefore, utilize the inventive method and spirit, can on the zones of different of same colorful array of pixels or same LCoS panel, form and have the pixel that different colored light are formed, for example can be according to aforementioned process, on the semiconductor-based end, form multi layer colour filter layer and reflection horizon (or etching stopping layer), in different pixels, have the multiple opening degree of depth or structure, just can in different pixels, produce the colored light of to three kind even more colors respectively.
In addition, though in the 3rd embodiment, do not have instruction how to make contact plunger between pixel electrode and first, second and the 3rd chromatic filter layer 104,108,112, those skilled in the art should be easily in conjunction with the technology in the previous embodiment make contact plunger simultaneously, contact is electric or other electronic components and colorful array of pixels of the present invention 120.Moreover those skilled in the art also can be in conjunction with the method for previous embodiment, and other provides a transparency carrier and liquid crystal molecule, makes the LCoS display device to combine with the semiconductor-based end 100.
Please refer to Figure 19 to Figure 22, Figure 19 to Figure 22 makes the process schematic representation of the 4th embodiment of LCoS display device colorful array of pixels for the present invention, and the element during present embodiment is graphic is a component symbol of continuing to use Figure 14 to Figure 18.At first, as shown in figure 19, provide semiconductor substrate 100, its surface definition has pixel a plurality of times, is simplified illustration, present embodiment only with one group comprise one for the first time pixel 114, for the second time pixel 116 and for the third time pixel 118 pixel as an illustration.Then, form one first reflection horizon 102 above it.First reflection horizon 102 comprises that a pixel electrode 136 is located at for the first time in the pixel 114 and two contact elements 138 are located at respectively for the second time in pixel 116 and the pixel 118 for the third time, wherein pixel electrode 136 and contact element 138 be electrically connected on respectively first, second with pixel 114,116,118 for the third time in image element circuit or electronic component (figure does not show).The method for making in first reflection horizon 102 can metal material or other conductive materials in 100 surface depositions, one reflection horizon, the semiconductor-based end, produce pixel electrode 136 and contact element 138 with photoetching and etch process definition more afterwards.
Then, form one first chromatic filter layer 104 and one first cushion 142 on surface, the semiconductor-based ends 100.The material of first cushion 142 can be same as first chromatic filter layer 104, and is used as first cushion 142 with the thickness that thickens the first predetermined chromatic filter layer 104.Then remove part first chromatic filter layer 104 and first cushion 142, and form the contact hole in first chromatic filter layer 104 on contact element 138, in the contact hole, insert conductive material again, to form contact plunger 140.Form one second reflection horizon 106, one second chromatic filter layer 108 and one second cushion 148 then on the semiconductor-based end 100 in regular turn, similarly, the material of second cushion 148 can be similar to the material of second chromatic filter layer 108.Second reflection horizon 106 comprises a contact element 144 corresponding to the zone of pixel 118 for the third time, and second reflection horizon 106 has covered the part corresponding to first and second time pixel 114,116 in addition at semiconductor-based the end 100.Then, in second chromatic filter layer 108 and second cushion 148, form a contact plunger 146, be located at contact element 144 tops, and be electrically connected with the interior contact element 138 of pixel for the third time 118 with contact plunger 140 by contact element 144.Then, on second cushion 148 or second chromatic filter layer 108, form one the 3rd reflection horizon 110 and one the 3rd chromatic filter layer 112 again.
Please refer to Figure 20, then form one first patterned layer 122 on the 3rd chromatic filter layer 112 surfaces, it comprises the one first picture zone 124 of exposing to the sun, and exposes the 3rd chromatic filter layer 112 corresponding to pixel 114 the part first time.Then be used as etching mask and remove part the 3rd chromatic filter layer 112 that exposes and part the 3rd reflection horizon 110, second cushion 148, second chromatic filter layer 108 and second reflection horizon 106 of below thereof with first patterned layer 122, until first cushion, 142 surfaces, and form an opening 126.In addition, Sheng Xia second reflection horizon 106 corresponding to the second time pixel 116 part then be taken as the pixel electrode 154 of pixel 116 for the second time.
Then as shown in figure 21, in opening 126, form one first flatness layer 150, its material can be same as the material of first cushion 142, is formed at surface, the semiconductor-based ends 100 with depositional mode, and selectivity removes unnecessary first flatness layer, 150 materials with glossing.Then, form one second patterned layer 128 on first flatness layer 150 and the 3rd chromatic filter layer 112, it comprises the one second picture zone 130 of exposing to the sun, corresponding to pixel 116 second time.
Then as shown in figure 22, utilize second patterned layer 128 to be used as mask, remove first flatness layer 150, the 3rd chromatic filter layer 112 and the 3rd reflection horizon 110 that it exposes, until second cushion, 148 surfaces, and in the 3rd chromatic filter layer 112 and the 3rd reflection horizon 110, form an opening 132, corresponding to pixel 116 second time.Remove second patterned layer 128 afterwards, and on the semiconductor-based end 100, form one second flatness layer 152, second flatness layer 152 is inserted in the opening 132.The material of second flatness layer 152 can be same as the material of second cushion 148 or second chromatic filter layer 108.Then carry out a glossing, the 3rd chromatic filter layer 112 lip-deep first and second flatness layers 150,152 are removed, just finish the making of colorful array of pixels 120 of the present invention.
Compared to known technology, because the method for making of LCoS display device of the present invention is three layers of reflection horizon to be interted be located at first, between the second and the 3rd chromatic filter layer, and utilization comprises that the reflection horizon of metal material has the character of different etching characteristics with the colorized optical filtering layer material, therefore can utilize simple etch process to define first in each time pixel respectively, during the second and the 3rd chromatic filter layer, can utilize the reflection horizon to be used as etching stopping layer, and avoid the chromatic filter layer below the destruction reflection horizon in etch process, have first of different pattern in each time pixel, to provide, the second and the 3rd chromatic filter layer.Therefore, each time pixel can become different color light with the light beam split respectively with the 3rd chromatic filter layer by its lip-deep first, second, provides light and produce on same LCoS display panel, and then produces coloured image.Moreover, because LCoS display device of the present invention is to make colorful array of pixels on single LCoS display panel, therefore can simplify the complicated light engine in the known LCoS display device, for example no longer need beam split and photosystem and look runner in the light engine, also only need a white light source, just the LCoS display device that can utilize the present invention to have colorful array of pixels produces colored image, significantly saves technology cost and product size.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (51)
1. method for making with liquid crystal on silicon (LCOS) display device of colorful array of pixels, it includes:
The semiconductor-based end, be provided;
On this semiconductor-based end, form first reflection horizon, first chromatic filter layer, second reflection horizon and second chromatic filter layer in regular turn;
Form first patterned layer on this second chromatic filter layer, it comprises that first exposes to the sun as the zone;
With this first patterned layer is mask, removes this second chromatic filter layer of part and this second reflection horizon of part, and forms first opening in this second chromatic filter layer;
Remove this first patterned layer; And
In this first opening, form first flatness layer, with this semiconductor-based basal surface of planarization.
2. method for making as claimed in claim 1, the method that wherein removes this second chromatic filter layer of this part and this second reflection horizon comprises:
With this first patterned layer is mask, removes this second chromatic filter layer of part, until exposing this second reflection horizon; And
With this first patterned layer is mask, removes this second reflection horizon of part, until exposing this first chromatic filter layer.
3. method for making as claimed in claim 1, wherein this method is before forming this second reflection horizon, and other comprises prior to forming first cushion on this first chromatic filter layer.
4. method for making as claimed in claim 3, wherein this first cushion comprises the material that is same as this first chromatic filter layer.
5. method for making as claimed in claim 3, wherein the material of this first cushion comprises epoxy resin.
6. method for making as claimed in claim 1, wherein this method includes in addition:
On this first flatness layer surface and this second chromatic filter layer, form the 3rd reflection horizon and the 3rd chromatic filter layer in regular turn:
Form second patterned layer on the 3rd chromatic filter layer, it comprises second expose to the sun picture zone and this first picture zone of exposing to the sun;
With this second patterned layer is mask, removes part the 3rd chromatic filter layer and part the 3rd reflection horizon, and forms second opening; And
In this second opening, form second flatness layer, with this semiconductor-based basal surface of planarization.
7. method for making as claimed in claim 6, wherein this first expose to the sun picture zone with this second expose to the sun as the zone correspond respectively to this semiconductor suprabasil at least one first time of pixel and at least one second time pixel, remaining the 3rd chromatic filter layer is then corresponding to the suprabasil at least one pixel for the third time of this semiconductor.
8. method for making as claimed in claim 6, wherein the 3rd reflection horizon comprises metal material.
9. method for making as claimed in claim 6, wherein this method is before forming the 3rd reflection horizon, and other comprises prior to this second color filter surfaces and forms second cushion.
10. method for making as claimed in claim 1, wherein this first reflection horizon comprises:
Pixel electrode is corresponding to this first expose to the sun picture zone; And
At least one contact element is located at this and first is exposed to the sun picture on this semiconductor-based end outside the zone.
11. method for making as claimed in claim 10, wherein this method is included in addition and forms contact plunger in this first chromatic filter layer, and corresponding to this contact element, and this contact plunger is to be used for being electrically connected this contact element and this second reflection horizon.
12. method for making as claimed in claim 11, the step that wherein forms this contact plunger includes:
Remove this first chromatic filter layer of part, to form the contact hole in this first chromatic filter layer on this contact element; And
Insert conductive material in this contact hole, to form this contact plunger.
13. method for making as claimed in claim 1, wherein this first reflection horizon and this second reflection horizon comprise metal material respectively.
14. method for making as claimed in claim 1, wherein this first flatness layer comprises the material of this first chromatic filter layer.
15. method for making as claimed in claim 1, wherein this first chromatic filter layer and this second chromatic filter layer can filter natural light, so that wavelength coverage first coloured light inequality and second coloured light to be provided respectively.
16. method for making as claimed in claim 15, wherein this first coloured light and this second coloured light are respectively blue light and green glow, blue light and ruddiness or green glow and ruddiness.
17. method for making as claimed in claim 1, wherein this method is included in addition on this semiconductor-based end and forms alignment film.
18. method for making as claimed in claim 17, wherein this method includes in addition:
Transparency carrier is provided, and its surface has transparency conducting layer;
Make up this transparency carrier and this semiconductor-based end; And
Pour into liquid crystal material in this transparency carrier and between this semiconductor-based end.
19. method for making as claimed in claim 1, wherein this first chromatic filter layer and this second chromatic filter layer comprise inorganic dichroic coating material respectively.
20. method for making as claimed in claim 1, wherein this first with this second patterned layer comprise photo anti-corrosion agent material respectively.
21. the method for making with liquid crystal on silicon (LCOS) display device of colorful array of pixels, it includes:
The semiconductor-based end, be provided;
On this semiconductor-based end, form first reflection horizon, first chromatic filter layer, second reflection horizon, second chromatic filter layer, the 3rd reflection horizon and the 3rd chromatic filter layer in regular turn;
Form first patterned layer on the 3rd chromatic filter layer, it comprises that first exposes to the sun as the zone;
Carrying out first etch process, is mask with this first patterned layer, removes part the 3rd chromatic filter layer and part the 3rd reflection horizon, to form first opening in the 3rd filter layer;
Form second patterned layer on the 3rd chromatic filter layer, it comprises that second exposes to the sun as the zone;
Carrying out second etch process, is mask with this second patterned layer, removes part the 3rd chromatic filter layer and part the 3rd reflection horizon, to form second opening; And
In this first opening of this semiconductor-based basal surface or this second opening, form first flatness layer.
22. method for making as claimed in claim 21, wherein this first etch process comprises in addition and removes this second chromatic filter layer and this second reflection horizon that is exposed by this first patterned layer.
23. method for making as claimed in claim 21, wherein this second etch process comprises in addition and removes this second chromatic filter layer and this second reflection horizon that is exposed by this second patterned layer.
24. method for making as claimed in claim 21, wherein this method is included in addition and forms before this second patterned layer, prior to forming second flatness layer in this first opening.
25. method for making as claimed in claim 21, wherein this method comprises in addition and forms first cushion and second cushion, is located under this second reflection horizon respectively and under the 3rd reflection horizon.
26. method for making as claimed in claim 25, wherein this first cushion and this second cushion comprise the material that is same as this first chromatic filter layer and this second chromatic filter layer respectively.
27. method for making as claimed in claim 25, wherein the material of this first cushion or this second cushion comprises epoxy resin.
28. method for making as claimed in claim 21, wherein this first expose to the sun picture zone with this second expose to the sun as the zone correspond respectively to this semiconductor suprabasil at least one first time of pixel with one the second time pixel, and remaining the 3rd chromatic filter layer is corresponding to the suprabasil at least one pixel for the third time of this semiconductor.
29. method for making as claimed in claim 21, wherein this first reflection horizon comprises:
Pixel electrode is corresponding to this first expose to the sun picture zone; And
At least one contact element is located at this and is exposed to the sun the picture zone on this semiconductor-based end in addition.
30. method for making as claimed in claim 29, wherein this method is included in addition and forms contact plunger in this first chromatic filter layer, and corresponding to this contact element, and this contact plunger is to be used for being electrically connected this contact element and this second reflection horizon.
31. method for making as claimed in claim 30, the step that wherein forms this contact plunger includes:
Remove this first chromatic filter layer of part, to form the contact hole in this first chromatic filter layer on this contact element; And
Insert conductive material in this contact hole, to form this contact plunger.
32. method for making as claimed in claim 21, wherein this first reflection horizon, this second reflection horizon and the 3rd reflection horizon comprise metal material respectively.
33. method for making as claimed in claim 21, wherein this first chromatic filter layer, this second chromatic filter layer and the 3rd chromatic filter layer can filter natural light, so that wavelength coverage first coloured light inequality, second coloured light and the 3rd coloured light to be provided respectively.
34. method for making as claimed in claim 33, wherein this first coloured light, second coloured light and the 3rd coloured light are respectively green glow, blue light and ruddiness.
35. method for making as claimed in claim 21, wherein this method is included in addition on this first flatness layer and forms alignment film.
36. method for making as claimed in claim 35, wherein this method includes in addition:
Transparency carrier is provided, and its surface has transparency conducting layer;
Make up this transparency carrier and this semiconductor-based end; And
Pour into liquid crystal material in this transparent substrates and between this semiconductor-based end.
37. method for making as claimed in claim 21, wherein this first chromatic filter layer, this second chromatic filter layer and the 3rd chromatic filter layer comprise inorganic dichroic coating material respectively.
38. method for making as claimed in claim 21, wherein this first with this second patterned layer comprise photo anti-corrosion agent material respectively.
39. the liquid crystal on silicon (LCOS) display device with colorful array of pixels, it includes:
The semiconductor-based end,, its surface definition has pixel a plurality of times, forms colorful array of pixels;
First reflection horizon and first chromatic filter layer were located on this semiconductor-based end;
Second reflection horizon and second chromatic filter layer are located on this first chromatic filter layer, and this second chromatic filter layer and this second reflection horizon have first opening, corresponding to this semiconductor suprabasil first time of pixel; And
The 3rd reflection horizon and the 3rd chromatic filter layer are located on this second chromatic filter layer, and the 3rd chromatic filter layer and the 3rd reflection horizon have second opening, corresponding to suprabasil pixel for the first time of this semiconductor and pixel for the second time.
40. liquid crystal on silicon (LCOS) display device as claimed in claim 39, it includes flatness layer in addition and is located in this first opening and this second opening.
41. liquid crystal on silicon (LCOS) display device as claimed in claim 40, wherein this flatness layer includes:
First flatness layer is located in this first opening; And
Second flatness layer is located in this second opening.
42. liquid crystal on silicon (LCOS) display device as claimed in claim 39, it comprises that in addition first cushion is located between this first chromatic filter layer and this second reflection horizon.
43. liquid crystal on silicon (LCOS) display device as claimed in claim 39, it comprises that in addition second cushion is located between this second chromatic filter layer and the 3rd reflection horizon.
44. liquid crystal on silicon (LCOS) display device as claimed in claim 39, wherein this first reflection horizon includes:
Pixel electrode is corresponding to this pixel for the first time; And
Contact element is located in this of pixel or for the third time in the pixel second time.
45. liquid crystal on silicon (LCOS) display device as claimed in claim 44, wherein this contact element does not contact with this pixel electrode.
46. liquid crystal on silicon (LCOS) display device as claimed in claim 44, it comprises that in addition first contact plunger is located in this first chromatic filter layer, and is electrically connected on this contact element and this second reflection horizon.
47. liquid crystal on silicon (LCOS) display device as claimed in claim 46, it comprises that in addition second contact plunger is located in this second chromatic filter layer, and is electrically connected on this contact element, this second reflection horizon and the 3rd reflection horizon.
48. liquid crystal on silicon (LCOS) display device as claimed in claim 39, wherein this second reflection horizon includes:
Pixel electrode is corresponding to this pixel for the second time; And
Contact element be located at for the third time in the pixel, and this contact element does not contact with this pixel electrode.
49. liquid crystal on silicon (LCOS) display device as claimed in claim 39, wherein the 3rd reflection horizon includes pixel electrode, corresponding to pixel for the third time.
50. liquid crystal on silicon (LCOS) display device as claimed in claim 39, wherein this first chromatic filter layer, this second chromatic filter layer and the 3rd chromatic filter layer comprise inorganic dichroic coating material respectively.
51. liquid crystal on silicon (LCOS) display device as claimed in claim 39, wherein this liquid crystal on silicon (LCOS) display device is the reflective type silicon-based liquid crystal display device.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007101082352A CN100549792C (en) | 2007-06-04 | 2007-06-04 | Has liquid crystal on silicon (LCOS) display device of colorful array of pixels and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101082352A CN100549792C (en) | 2007-06-04 | 2007-06-04 | Has liquid crystal on silicon (LCOS) display device of colorful array of pixels and preparation method thereof |
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| CN101320175A CN101320175A (en) | 2008-12-10 |
| CN100549792C true CN100549792C (en) | 2009-10-14 |
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