CN100541833C - The solar cell of tool flat contact area and technology thereof - Google Patents
The solar cell of tool flat contact area and technology thereof Download PDFInfo
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- CN100541833C CN100541833C CNB2007101068162A CN200710106816A CN100541833C CN 100541833 C CN100541833 C CN 100541833C CN B2007101068162 A CNB2007101068162 A CN B2007101068162A CN 200710106816 A CN200710106816 A CN 200710106816A CN 100541833 C CN100541833 C CN 100541833C
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- base plate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A kind of solar battery process of tool flat contact area, it is at solar base plate surface arrangement mask, and definition arranges that the surface local of this mask is that contact zone and definition arrange that the surface local of this mask is exposed area with the exterior domain; Then this exposed area of etching and making removes solar base plate surface mask behind the exposed area roughening on this solar base plate surface; Last then be to arrange a conductive layer in the contact zone on this solar base plate surface.Therefore make this solar base plate have a p type semiconductor layer, a n type semiconductor layer and a conductive layer, and wherein this n type semiconductor layer is formed at this p type semiconductor layer top, this exposed area is a rough surface, and this contact zone is smooth surface, and this conductive layer is arranged in this contact zone.
Description
Technical field
The present invention is about a kind of solar cell and technology thereof of tool flat contact area, and it particularly utilizes mask to improve electrode that solar cell lays and the contact between the solar base plate.
Background technology
In the known silicon solar cell technology, before electrode is made, must be through technologies such as overdoping, etching, heat treatments, and utilize chemical etching to form coarse micro-structural in the etching of chip surface travel direction, with the course of increase light in solar cell, and then the light reflectivity of reduction solar cell surface.Yet if the electrode position, position that this micro-structural produces, easily the usefulness to solar cell produces harmful effect.
Wherein, with reference to shown in Figure 1, it is a known solar cell and a technology thereof of not using tool flat contact area of the present invention, it is that an electrode A 2 is being arranged via chemical etching in a solar base plate A1 surface after the surperficial travel direction etching, because the solar base plate A1 of these electrode A 2 positions surface is the only way which must be passed of photoproduction carrier (photo-carrier), if be present in this solar base plate A1 and electrode A 2 contact positions because of etching produces defective A3, influence will be remarkable especially.Yet organize in the etching process according to directivity optionally, must cause contact surface deterioration and the tissue defects in the substrate with this electrode A 2 to enlarge, make this defective A3 that will originally can repair again can't repair by reprocessing.Under such result, not only can increase the surface area of this defective A3, also can increase again the photoelectric current that (recombination) center of answer and carrier are captured and can collect with the probability and the minimizing of scattering in transmittance process, to such an extent as to make the decrease in efficiency of solar cell.In addition, if status is more serious, produce darker pit (pit) A4 among the solar cell substrate A1, the formation of this pit A4 can make electrode A 2 when operation burn through take place and produce a passage A5, and cause leakage current to heighten by this passage A5, so that solar cell usefulness seriously reduces, or even produce defective products.
Relevant at present mode of ameliorating has little shadow technology (lithography) of use or laser technology etc., with reach tool optionally (selective area) directivity organize etching or remove not good electrode contact surface, but these class methods all need technique of alignment, expensive device and long process time accurately, and lower with present main flow solar battery process compatibility, therefore be only applicable to the solar cell manufacturing of a small amount of special requirement.
So the present inventor is because the disappearance of known solar cell is the solar cell and the technology thereof of urgently thinking to invent a kind of tool flat contact area.
Summary of the invention
Main purpose of the present invention is smooth for still keeping in the arrangement of electrodes district after directivity is organized etching, when reducing the subsequent electrode layout, and solar base plate and electrode interface generation of defects, and promoted solar battery efficiency.
Another object of the present invention is and after directivity is organized etching, still can keep smoothly, avoid having pit to produce, make electrode be difficult for collecting photoelectron because of directional etch causes solar base plate arrangement of electrodes district in the arrangement of electrodes district.
Still a further object of the present invention is carried out preceding mask layout of etching step and the arrangement of electrodes behind the etching step for utilizing wire mark technology, not only compatible fully with present solar battery process, therefore and can not need semiconductor gold-tinted technology, have fast and advantage cheaply.
Based on the solar battery process of aforementioned a kind of tool flat contact area, it is at solar base plate surface arrangement mask, and definition arranges that the surface local of this mask is that contact zone and definition arrange that the surface local of this mask is exposed area with the exterior domain; Then this exposed area of etching and making removes solar base plate surface mask behind the exposed area roughening on this solar base plate surface; Last then be to arrange a conductive layer in the contact zone on this solar base plate surface.Therefore make this solar base plate have a p type semiconductor layer, a n type semiconductor layer and a conductive layer, and wherein this n type semiconductor layer is formed at this p type semiconductor layer top, this exposed area is a rough surface, and this contact zone is smooth surface, and this conductive layer is arranged in this contact zone.
The mask deposition step on aforesaid solar base plate surface can use wire mark technology to form this mask, and this mask can use circuit board technology green lacquer commonly used.Aforesaid solar base plate surface conductance layer deposition step also can use wire mark technology to form this conductive layer.In addition, this solar base plate surface mask is arranged or solar base plate surface conductance layer deposition step also can be used semiconductor gold-tinted technology arrangement photoresistance and form this mask.
The solar base plate of aforesaid solar base plate surface mask deposition step has on a p type semiconductor layer and this p type semiconductor layer and has a n type semiconductor layer, that is a semiconductor structure that has had p type semiconductor layer and a n type semiconductor layer is provided in advance.In addition, in this solar base plate surface mask deposition step, this solar base plate also can provide the semiconductor structure with a p type semiconductor layer earlier, and after this solar base plate surface mask removes step, have the p type semiconductor layer apex zone of the atom of five valence electrons by doping again, and form n type semiconductor layer to this solar base plate.
Can carry out an anti-reflecting layer after aforesaid solar base plate surface mask removes and arrange, it is that upper surface at this solar base plate forms an anti-reflecting layer, and auxiliary this solar base plate of this anti-reflecting layer reduces the light reflection loss on surface.
Therefore, beneficial effect of the present invention is: make the solar cell and the technology thereof of apparatus flat contact area, and absolutely compatible with present solar battery process, need high equipment fast and not, industry is had practicality; It is to use the colloid material and with the chip surface that the hard mask protection of wire mark will contact with electrode in addition, after directivity is organized etching, still can keep smooth, generation of defects when reducing follow-up wire mark electrode, lifting solar battery efficiency; Its process is to utilize the wire mark technology identical with the electrode of solar battery manufacturing technology, can reach the constituency directivity and organize etching and electrode contact surface optimization effect.
Be familiar with this skill personage and understand purpose of the present invention, feature and effect for making, now by following specific embodiment, and cooperate graphic, to the present invention illustrate in detail as after.
Description of drawings
Fig. 1 shows known solar cell and the technology thereof of not using tool flat contact area of the present invention;
Fig. 2 a to Fig. 2 d shows the assembly generalized section of solar cell one embodiment of tool flat contact area of the present invention;
Fig. 3 shows the operating procedure flow chart of the solar battery process of tool flat contact area of the present invention;
Fig. 4 shows the assembly generalized section of another embodiment of solar cell of tool flat contact area of the present invention;
The solar cell of Fig. 5 a to Fig. 5 e demonstration tool flat contact area of the present invention is the assembly generalized section of an embodiment again; And
Fig. 6 shows another operating procedure flow chart of the solar battery process of tool flat contact area of the present invention.
The primary clustering symbol description
P type semiconductor layer 11
N type semiconductor layer 12
P type semiconductor layer 41
N type semiconductor layer 42
Mask 5
Solution 6
Step (301), (302), (303), (304)
Step (601), (602), (603), (604), (605)
Embodiment
With reference to figure 2a to Fig. 2 d and shown in Figure 3, Fig. 2 a to Fig. 2 d shows the assembly generalized section of solar cell one embodiment of tool flat contact area of the present invention, and Fig. 3 shows the operating procedure flow chart of the solar battery process of tool flat contact area of the present invention.In the solar battery process of tool flat contact area of the present invention, its operating procedure comprises: step (301), it provides a solar base plate 1, this solar base plate 1 has and has a n type semiconductor layer 12 on a p type semiconductor layer 11 and this p type semiconductor layer 11, n type semiconductor layer 12 surface locals of this solar base plate 1 are defined as contact zone 13 and local definition is an exposed area 14, and in the contact zone on this solar base plate 1 surface 13 layouts, one mask 2, make that this mask 2 is enough to resist the contact zone 13 that a solution 3 corrodes this solar base plate 1 surface, shown in Fig. 2 a; Step (302), it is that this solar base plate 1 with this mask 2 of surface arrangement is soaked in this solution 3, this solution 3 does not produce any chemical reaction with this mask 2, produce chemical reaction and the exposed area 14 on this solar base plate 1 surface of etching by this solution 3, the selective etch effect can take place with this solution 3 in this exposed area 14 on this solar base plate 1, make the exposed area 14 on this solar base plate 1 surface produce uneven and reach the surface roughening effect, wherein the reflection of light can be reduced in the surface behind this roughening, and the surface has this mask 2 isolated contact zones 13 still can keep its profile pattern in through the surface roughening process, shown in Fig. 2 b; Step (303), it is the mask 2 that removes this solar base plate 1 surface, shown in Fig. 2 c, and after the mask 2 on this solar base plate 1 surface removed, the contact zone 13 of this n type semiconductor layer 2 was still kept smooth; And step (304), it is to arrange a conductive layer 15 in this contact zone 13 of this solar base plate 1 surfacing, makes this conductive layer 15 can be used as electrode and uses, and be subjected to the photoelectron that produces behind the light in order to receive this solar base plate 1, shown in Fig. 2 d.
In mask 2 deposition step of aforementioned present embodiment, can use wire mark technology to form this mask 2, wherein this mask 2 can be normal green lacquer (green paint) or other kind photoresistance that uses in the general printed circuit board technology.In addition, this mask 2 also can be the photoresistance that semiconductor gold-tinted technology is arranged, and makes this mask 2 define this contact zone 13 and this exposed area 14 on this solar base plate 1 through the exposure imaging technology.In mask 2 steps that remove this solar base plate 1 surface of aforementioned present embodiment, then be, remove the mask 2 on this solar base plate 1 surface according to the method for using printed circuit board technology or semiconductor technology.Specifically, this mask 2 is a high molecular polymer normally, and can utilize this mask 2 of organic solvent dissolution, or with this mask 2 from this solar base plate 1 sur-face peeling.
Moreover aforementioned present embodiment is arranged in the step of this conductive layer 15 in this solar base plate 1 this contact zone 13, can be used wire mark technology to form this conductive layer 15.In addition, also can use electroplating technology or any plain conductor placement technique in the printed circuit board technology, use and form this conductive layer 15, or the coating technique in the use semiconductor technology and via etch process or lift-off method any plain conductor placement techniques such as (lift-off method), use forming this conductive layer 15.
Based on the solar cell and the technology thereof of aforementioned tool flat contact area of the present invention, make to have on the solar base plate 1 of this p type semiconductor layer 11 and this n type semiconductor layer 12, form smooth this contact zone 13 and this coarse exposed area 14.Wherein not only can have coarse exposed area 14 and can reduce the surface light reflection loss at this solar base plate 1, and this solar base plate 1 has more smooth contact zone 13, make this conductive layer 15 that is arranged on this contact zone 13 can reduce generation of defects, and make the carrier that produces in this solar base plate 1 in the process that is passed to this conductive layer 15, effects such as seizure that minimizing produces because of defective and scattering promote solar battery efficiency to increase final collectable photoelectric current.
With reference to shown in Figure 4, it shows the assembly generalized section of another embodiment of solar cell of tool flat contact area of the present invention.In the aforementioned embodiment, in the solar battery process of tool flat contact area of the present invention, can further form an anti-reflecting layer 16, use auxiliary this exposed area 14 and reduce the light reflection loss on surface at exposed area 14 places of this solar base plate 1.After wherein this anti-reflecting layer 16 can and remove this mask 2 after the directivity of previous embodiment is organized etching, arrange that then this anti-reflecting layer 16 is on this solar base plate 1.
With reference to figure 5a to Fig. 5 e and shown in Figure 6, the solar cell of Fig. 5 a to Fig. 5 e demonstration tool flat contact area of the present invention is the assembly generalized section of an embodiment again, and Fig. 6 shows another operating procedure flow chart of the solar battery process of tool flat contact area of the present invention.The operating procedure of the solar battery process of tool flat contact area of the present invention comprises: step (601), it provides a solar base plate 4, this solar base plate 4 has a p type semiconductor layer 41, the surface local of this solar base plate 4 is defined as contact zone 43 and local definition is an exposed area 44, and in the contact zone on these solar base plate 4 surfaces 43 layouts, one mask 5, make that this mask 5 is enough to resist the contact zone 43 that a solution 6 corrodes these solar base plate 4 surfaces, shown in Fig. 5 a; Step (602), it is that this solar base plate 4 with this mask 5 of surface arrangement is soaked in this solution 6, this solution 6 does not produce any chemical reaction with this mask 5, produce chemical reaction and the exposed area 44 on these solar base plate 4 surfaces of etching by this solution 6, the selective etch effect can take place with this solution 6 in this exposed area 44 on this solar base plate 4, make the exposed area 44 on these solar base plate 4 surfaces produce uneven and reach the surface roughening effect, wherein the reflection of light can be reduced in the surface behind this roughening, and the surface has this mask 5 isolated contact zones 43 still can keep its profile pattern in through the surface roughening process, shown in Fig. 5 b; Step (603), it is the mask 5 that removes these solar base plate 4 surfaces, shown in Fig. 5 c, and after the mask 5 on these solar base plate 4 surfaces removed, this contact zone 13 was still kept smooth; Step (604), it is the atom by five valence electrons that mix, so that p type semiconductor layer 41 apex zones of this solar base plate 4 form a n type semiconductor layer 42, shown in Fig. 5 d; Step (605), it is to arrange a conductive layer 45 in this contact zone 43 of these solar base plate 4 surfacings, makes this conductive layer 45 can be used as electrode and uses, and be subjected to the photoelectron that produces behind the light in order to receive this solar base plate 4, shown in Fig. 5 e.
Based on the solar cell and the technology thereof of aforementioned tool flat contact area of the present invention, make to have on the solar base plate 4 of this p type semiconductor layer 41 and this n type semiconductor layer 42, form smooth this contact zone 43 and this coarse exposed area 44.Wherein not only can have coarse exposed area 44 and can reduce the surface light reflection loss at this solar base plate 4, and this solar base plate 4 has more smooth contact zone 43, make this conductive layer 45 that is arranged on this contact zone 43 can reduce generation of defects, and make the carrier that produces in this solar base plate 4 in the process that is passed to this conductive layer 45, effects such as seizure that minimizing produces because of defective and scattering promote solar battery efficiency to increase final collectable photoelectric current.
In the present embodiment, the upper surface of this solar base plate 4 can form an anti-reflecting layer equally, uses auxiliary this solar base plate 4 and reduces the light reflection loss on surface.
Among aforesaid each embodiment, in this solar base plate, this n type semiconductor layer is formed at this p type semiconductor layer top, and generally in order to promote the probability of catching light induced electron, this n type semiconductor layer can be thinner.In fact, in this solar base plate, this p type semiconductor layer also can be formed at this n type semiconductor layer top.The present invention mainly is at the contact zone on this solar base plate surface and the formation of exposed area, this solar base plate is so long as have the solar base plate that the P-N interface promptly can become solar cell, the structure that does not limit this p type semiconductor layer and n type semiconductor layer and constituted.
Below the present invention has been done a detailed description, but the above only is preferred embodiment of the present invention, when not limiting scope of the invention process.Be that all equalizations of doing according to the present patent application scope change and modify etc., all should still belong in the patent covering scope of the present invention.
Claims (11)
1, a kind of solar battery process of tool flat contact area, its step comprises:
Solar base plate surface mask is arranged, it is to arrange a mask in a solar base plate surface region portion, and definition arranges that the surface local of this mask is the contact zone, definition arranges that the surface local of this mask is exposed area with the exterior domain, and wherein this mask is enough to resist the contact zone that a solution corrodes this solar base plate surface;
The exposed area etching, it is that this solar base plate with this mask of surface arrangement is soaked in the aforementioned solution, this solution is with the tool exposed area on this solar base plate surface of directional etch effect etching optionally, makes the exposed area roughening on this solar base plate surface;
Solar base plate surface mask removes, and it is the mask that removes this solar base plate surface; And
Solar base plate surface conductance layer arranges that it is to arrange a conductive layer in the contact zone on this solar base plate surface.
2, the solar battery process of tool flat contact area as claimed in claim 1 is characterized in that: this solar base plate surface mask deposition step is to use wire mark technology to form this mask.
3, the solar battery process of tool flat contact area as claimed in claim 2 is characterized in that: this mask is green lacquer.
4, the solar battery process of tool flat contact area as claimed in claim 1 is characterized in that: this solar base plate surface mask deposition step is to use semiconductor gold-tinted technology arrangement photoresistance and forms this mask.
5, the solar battery process of tool flat contact area as claimed in claim 1 is characterized in that: the solar base plate of this solar base plate surface mask deposition step has on a p type semiconductor layer and this p type semiconductor layer and has a n type semiconductor layer.
6, the solar battery process of tool flat contact area as claimed in claim 1, it is characterized in that: the solar base plate of this solar base plate surface mask deposition step has a p type semiconductor layer, and this solar base plate surface mask removes after the step, further comprises:
Have the p type semiconductor layer apex zone of the atom of five valence electrons by doping, and form a n type semiconductor layer to this solar base plate.
7, the solar battery process of tool flat contact area as claimed in claim 1 is characterized in that: this solar base plate surface conductance layer deposition step is to use wire mark technology to form this conductive layer.
8, the solar battery process of tool flat contact area as claimed in claim 1 is characterized in that: this solar base plate surface mask removes after the step, further comprises:
Anti-reflecting layer arranges, it is that exposed area at this solar base plate forms an anti-reflecting layer, and auxiliary this solar base plate of this anti-reflecting layer reduces the light reflection loss on surface.
9, a kind of solar cell of tool flat contact area, it comprises:
One solar base plate, and this solar base plate further comprises:
One p type semiconductor layer;
One n type semiconductor layer; And
One conductive layer;
Wherein the upper surface of this solar base plate is local forms an exposed area and other zone forms a contact zone, and this exposed area is that this contact zone is smooth surface with the tool rough surface of directional etch effect optionally; And this conductive layer is arranged in this contact zone.
10, the solar cell of tool flat contact area as claimed in claim 9 is characterized in that: this n type semiconductor layer is formed at this p type semiconductor layer top.
11, the solar cell of tool flat contact area as claimed in claim 9 is characterized in that: the exposed area of this solar base plate forms an anti-reflecting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101068162A CN100541833C (en) | 2007-05-10 | 2007-05-10 | The solar cell of tool flat contact area and technology thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101068162A CN100541833C (en) | 2007-05-10 | 2007-05-10 | The solar cell of tool flat contact area and technology thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101304057A CN101304057A (en) | 2008-11-12 |
| CN100541833C true CN100541833C (en) | 2009-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007101068162A Expired - Fee Related CN100541833C (en) | 2007-05-10 | 2007-05-10 | The solar cell of tool flat contact area and technology thereof |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651406A (en) * | 2011-02-23 | 2012-08-29 | 茂迪股份有限公司 | Manufacturing method for crystal silicon solar batteries |
| JP2015122475A (en) * | 2013-11-19 | 2015-07-02 | セイコーエプソン株式会社 | Method for manufacturing solar cell module, and solar cell module |
| CN114256363A (en) * | 2021-09-23 | 2022-03-29 | 天合光能股份有限公司 | Suede structure of solar cell and preparation method |
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- 2007-05-10 CN CNB2007101068162A patent/CN100541833C/en not_active Expired - Fee Related
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| CN101304057A (en) | 2008-11-12 |
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