CN100540134C - Be used to increase the method and apparatus of ferroelectric material volume conductance - Google Patents
Be used to increase the method and apparatus of ferroelectric material volume conductance Download PDFInfo
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- CN100540134C CN100540134C CNB2004800239159A CN200480023915A CN100540134C CN 100540134 C CN100540134 C CN 100540134C CN B2004800239159 A CNB2004800239159 A CN B2004800239159A CN 200480023915 A CN200480023915 A CN 200480023915A CN 100540134 C CN100540134 C CN 100540134C
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Abstract
In one embodiment, a kind of method of handling ferroelectric material comprises: with ferroelectric material and source metal pack into (1002) in the container, the temperature of rising container (1016), heating container reaches object time length (1020) under the temperature that is lower than the ferroelectric material Curie temperature, and reduces the temperature (1022) of container subsequently.But the target setting time span is to obtain the target electrical conductivity.For example object time length can be about 25 hours or shorter.
Description
Technical field
The present invention relates generally to material processed (material processing), and more specifically, but not exclusively, relate to the method and apparatus that is used to handle ferroelectric material.Background technology
Because lithium tantalate (LiTaO
3) and lithium niobate (LiNbO
3) have relatively large electro-optic coefficient and nonlinear optical coefficients, so they are the raw material that are used to make device for non-linear optical that are used widely.These device for non-linear optical for example comprise wavelength shifter, amplifier, tunable light source, dispersion compensator and optical strobe blender (optical gated mixer).Because its crystal has the self power generation polarization, lithium tantalate and lithium niobate also are known as ferroelectric material.
Because lithium tantalate has relative smaller volume electrical conductivity with the lithium niobate material, so electric charge trends towards assembling in these materials.Do the time spent and may produce electric charge accumulation when described material is heated or is subjected to mechanical stress.Because electric charge may make device produce short circuit and cause component failure thus or make its reliability variation, thus device manufacturer have to take special measure (cost is increased) thus make the electric charge accumulation reduce to minimum or make charge dissipation.
Thereby can increase the volume conductance of lithium niobate material by heating lithium niobate material in comprising the environment of reducibility gas.Described reducibility gas causes oxonium ion to be overflowed from the surface of lithium niobate material.Be left too much electronics thus in the lithium niobate material, thereby cause its volume conductance to increase.The volume conductance that increases prevents the charge generation gathering.
Though above-described technology can increase the volume conductance of lithium niobate material under certain condition, described technology is not effective especially for lithium tantalate.Because the lithium tantalate ratio lithium niobate for example is more suitable for being used in some high-frequency sound surface waves (SAW) filter applies, therefore desirable is a kind of technology that is used to increase lithium tantalate material volume electrical conductivity.
Summary of the invention
According to an aspect of the present invention, provide a kind of method of handling ferroelectric material, said method comprising the steps of: ferroelectric material and source metal are packed in the shell, and described shell comprises a plurality of openings; Described shell is put into container; The temperature of rising container; Heating container reaches object time length under the temperature that is lower than the ferroelectric material Curie temperature, and the select target time span is so that ferroelectric material obtains the target electrical conductivity; And the temperature that reduces container, wherein during reducing described vessel temp, metal vapors flows out from described shell by described a plurality of openings.
In one embodiment, a kind of method of handling ferroelectric material may further comprise the steps: ferroelectric material and source metal are packed in the container, the temperature of rising container, heating container reaches object time length under the temperature that is lower than the ferroelectric material Curie temperature, and reduces the temperature of container subsequently.But the target setting time span is to obtain the target electrical conductivity.For example object time length can be about 25 hours or shorter.
After reading the whole disclosure content that comprises accompanying drawing and claim, these and other feature of the present invention will should be readily appreciated that for a person skilled in the art.
Description of drawings
Fig. 1 is the schematic diagram of container according to an embodiment of the invention;
Fig. 2 is the schematic diagram of sheath body according to an embodiment of the invention;
Fig. 3 shows the system that is used to increase the ferroelectric material volume conductance according to an embodiment of the invention;
Fig. 4 shows a kind of block diagram that is used to increase the method for ferroelectric material volume conductance according to an embodiment of the invention;
Fig. 5 shows the schematic diagram of wafer cage according to an embodiment of the invention (wafer cage);
Fig. 6 shows the manufacturing specification of technology boat according to an embodiment of the invention;
Fig. 7 shows the manufacturing specification of shell according to an embodiment of the invention;
Fig. 8 shows the schematic diagram of container according to an embodiment of the invention;
Fig. 9 shows a kind of system that is used to increase the ferroelectric material volume conductance according to an embodiment of the invention; With
Figure 10 shows a kind of block diagram of handling the method for ferroelectric material according to an embodiment of the invention.
Employed identical Reference numeral is represented identical or similar parts in different accompanying drawings.Unless in addition indicate, otherwise accompanying drawing is not necessarily drawn in proportion.
The specific embodiment
In this disclosure content, many details for example device instance, technological parameter, processing step and material are provided, thereby the understanding fully to the embodiment of the invention is provided.Yet, one skilled in the art will appreciate that: under the situation that does not have one or more details, can put into practice the present invention.In other example, become unclear in order not make feature of the present invention, well-known details is not described and illustrates.
In addition, though be appreciated that following will being described embodiments of the invention in conjunction with lithium tantalate, the present invention is not limited.Those skilled in the art can adapt to instruction of the present invention and increase for example volume conductance of lithium niobate of other ferroelectric material.
According to one embodiment of present invention, can be heated to the Curie temperature of material by material being placed in the environment that comprises metal vapors and, thereby increase the volume conductance of ferroelectric material material.Put it briefly, the Curie temperature of ferroelectric material is that material loses the temperature of its ferroelectric properties thereon.Under the condition of the metal vapors by having higher relatively diffusion coefficient in existence the single domain ferroelectric material is heated to the temperature that is lower than its Curie temperature, the ferroelectric domain state of ferroelectric material can be by deterioration significantly.
Preferably, the metal that change steam into has higher relatively diffusion coefficient and has the potential possibility of the oxidation state of reduced iron electric material.The inventor thinks that these characteristics will allow metal ion diffusion number micron to enter into the surface of ferroelectric material, thereby filling lattice vacancy, the reduction-oxidation attitude, and from ferroelectric material, discharge electronics thus and begin to be filled in the process of the negative-ion vacancy in the material body.The electronics of filling these negative-ion vacancies is considered to be bound on the point defect position.These bound electrons generally have the energy level spectrum that stays distinctive broad colour developing to ferroelectric material.By filling lattice vacancy and in the point defect position is supplied with and electronics, excessive electric charge can be neutralized fast or may be conducted away from as polaron.When excessive electric charge (electronics) is introduced in the lattice, actively advantageously make electronics do as a wholely in the polarization part of lattice, to move.The described integral body that is known as polaron causes electron mobility to increase.Because electron charge is masked by lattice, so polaron can move along lattice under the effect of electrostatic force in the clear.
In one embodiment, the metal that be converted into steam comprises that zinc and ferroelectric material comprise the lithium tantalate that exists with the wafer form.Can produce zinc fume by the Curie temperature that zinc is heated to a little less than lithium tantalate wafer.For obtain for be lower than effectively spread under the temperature of Curie temperature for sufficiently high vapour pressure, can in having the airtight container of predetermined, heat metal and lithium tantalate.The inventor thinks that in zinc fume the heating lithium tantalate wafer can cause zinc to diffuse in the surface of lithium tantalate wafer and fills the room of lithium.It is believed that and can cause extra electronics to discharge like this according to equation 1:
EQ.1 Zn+VLi
-＝Zn
+2Li+2e
-
It is believed that extra electronics is trapped in the negative-ion vacancy in the lithium tantalate wafer body.The excessive charge of accumulating owing to pyroelectric effect or piezo-electric effect is conducted away from the increase that causes electron mobility in the lithium tantalate wafer body as polaron.That is to say as if the inventor thinks that the increase of lithium tantalate wafer electrical conductivity is polaron in essence.
Referring to Fig. 1, there is shown the schematic diagram of container 210 according to an embodiment of the invention.Container 210 can be used to keep one or more pending wafers 201 and the metal 202 of waiting to be transformed into steam.Container 210 comprises body 211 and end cap 212.For example can use oxygen hydrogen brazing rifle that end cap 212 is welded on the body 211.
Still referring to Fig. 1, one or more wafers 201 can be placed in the wafer cage 203, and subsequently, described wafer cage can be inserted in the container 210.Metal 202 is in wafer 201 can be placed on wafer cage 203.Wafer cage 203 can be the wafer cage that can buy on the market, for example can be from the LP Glass of California Santa Clara, and the wafer cage that Inc. buys.Wafer cage 203 for example can be made by quartz.
The size of container 210 in one embodiment has been shown in the table 1.Should be noted that container 210 can be sealed to hold the wafer of varying number.
Table 1. (referring to Fig. 1)
| Size | Numerical value (mm) |
| D1 | Internal diameter 120,00 |
| D2 | External diameter 125,00 |
| D3 | 217,00 |
| D4 | 279,24 |
| D5 | 76,20 |
| D6 | 80,00 |
| Size | Numerical value (mm) |
| D7 | 40,00 |
| D8 | 60,00 |
| D9 | 25,40 |
| D10 | Internal diameter 4,00 external diameters 6,00 |
| D11 | Internal diameter 7,00 external diameters 9,00 |
Fig. 2 shows the schematic diagram of sheath body 220 according to an embodiment of the invention.Sheath body 220 can be the cylindric sheath body of being made by aluminium oxide.Container 210 can be inserted in the sheath body 220 as shown in Figure 2, heats in process duct as shown in Figure 3 subsequently.Thereby sheath body 220 allows equably container 210 to be heated around container 210.In addition, sheath body 220 work that plays physical barriers does not break in order to protection container 210.
As shown in Figure 2, sheath body 220 can have blind end 224 and openend 221.Container 210 preferably is placed in the sheath body 220, makes end cap 212 towards openend 221.Openend 221 allows to remove easily container 210 from sheath body 220.Openend 221 also helps and form thermal gradient in temperature-fall period in container 210.This thermal gradient causes producing the low warm spot of attraction plated metal steam away from wafer in the container 210 in end cap 212.To have to like this reduce to minimum from the deposition that wafer surface removes.Further this feature of the present invention is described below.
Fig. 3 shows the system 300 that is used to increase the ferroelectric material volume conductance according to an embodiment of the invention.System 300 comprises the process duct 310 that comprises sheath body 220.As described, sheath body 220 covers container 210, described container 210 and then maintenance metal 202 and wafer 201.Process duct 310 can be the stove that uses in semi-conductor industry usually that can buy on the market.Process duct 310 comprise the heater 303 that is used to heat sheath body 220 and all parts of Qi Nei (be 303A, 303B, 303C).Process duct 310 can be 72 inches long, and is divided into three 24 inches long thermals treatment zone, and a middle thermal treatment zone is " hot-zone ".Process duct 310 can comprise first thermal treatment zone that is subjected to heater 303A heating, is subjected to second thermal treatment zone of heater 303B heating and the 3rd thermal treatment zone that is subjected to heater 303C heating.Process duct 310 also comprises pole bracket (cantilever) 302 and the door 301 that is used for mobile sheath body 220, and sheath body 220 enters and leave process duct by described door 301.Sheath body 220 can be placed in the middle of the process duct 310, and its openend 221 is in the face of door 301.
Fig. 4 shows a kind of block diagram that is used to handle the method 400 of ferroelectric material according to an embodiment of the invention.Use container 210, sheath body 220 and system 300 as an example method 400 to be described.Yet, should be appreciated that block diagram 400, container 210, sheath body 220 and system 300 only are used for illustrative purpose at this, and be not used in restricted purpose.
In the step 402 in Fig. 4, metal 202 and one or more wafer 201 are placed in the wafer cage 203.Subsequently wafer cage 203 is placed in the container 210.In one embodiment, wafer 201 is 100 millimeters a lithium tantalate wafer for the diameters that rotated 42 degree with respect to Y-axis, is 99.999% zinc and comprise purity in the metal 202.In one embodiment, in wafer cage 203, put into the zinc of five wafers 201 and about 8 grams.Zinc can be graininess.Purity is that 99.999% zinc particle can be from the JohnsonMatthey of Pennsylvanian Wayne on market, and Inc. buys.The zinc consumption that can change each wafer is to be applicable to concrete application.
In step 404, container is evacuated to 10
-7Holder is heated to about 200 ℃ subsequently and continues about 5 hours.Can cover tube portion 213 by end cap 212 is welded on the body 211, vavuum pump is connected on the tube portion 214, and the thermal insulation band is wrapped in around the container 210 and container 210 is heated, thus implementation step 404.Step 404 helps to remove oxygen source, water and other pollutant from container 210 before metal 202 fusings.
In step 406, re-injection container 210 is so that the pressure in the container 210 is about 760 holders a little less than Curie temperature the time.In one embodiment, container 210 is by extremely about 190 holders of re-injection.Increased the pressure in the container 210 like this, made that thus long-time high-temperature heating container 210 is safer.Can use inert gas for example argon container 210 is carried out re-injection.Selectively, can use the forming gas that comprises 95% nitrogen and 5% hydrogen that container 210 is carried out re-injection.Notice that forming gas self is not enough to reduce the lithium tantalate material, thereby its volume conductance is increased.Yet in current example, forming gas helps may remain in after being captured in step 404 oxygen in the container 210.Using forming gas re-injection container 210 may be unwanted in some that pollutant in the container 210 have been purged are fully used.Can smash lid and make it break away from tube portion 213 by connector 215 is welded on the tube portion 214, make re-injection gas flow through tube portion 213 then, container 210 is carried out re-injection.
In step 408, container 210 is sealed.In this, can be by removing the recycle gas body source and cover tube portion 213, and container 210 is sealed.(notice that end cap 212 has been soldered on the body 211, and tube portion 214 has been covered in the step in front.)
In step 410, container 210 is inserted in the sheath body 220.
In step 412, in process duct 310, be lower than under the temperature of Curie temperature of wafer 201 sheath body 220 is being heated.Under the temperature of the Curie temperature that is lower than wafer 201, sheath body 220 heated and make metal 202 fusing, can not make the obvious deterioration of ferroelectric properties of wafer 201 simultaneously.Metal 202 produces metal vapors around being melted in wafer 201.In this example, described metal vapors comprises zinc fume and wafer 201 and is made by lithium tantalate.The inventor thinks that the interaction between zinc fume and the lithium tantalate causes the volume conductance of wafer 201 to increase in the above and describes to some extent.
In one embodiment, at the middle part of growing 72 inches process duct 310 sheath body 220 is heated.Simultaneously, as shown in Figure 3, sheath body 220 can be placed in the process duct 310, make openend 221 towards door 301.Container 210 preferably is placed in the sheath body 220, makes end cap 212 towards openend 221 (referring to Fig. 2).
In one embodiment, in process duct 310, sheath body 220 is heated to about 595 ℃ maximum temperature and continues about 240 hours with about 150 ℃/hour programming rate.Preferably, sheath body 220 is heated to the Curie temperature several years that just are lower than wafer 201.Because the Curie temperature of wafer can change according to its manufacturer, for concrete wafer, may have to described maximum heating temperature is regulated.Thereby guarantee metal vapors inwardly diffusion fully the heat time heating time that can also be adjusted in sheath body 220 in the process duct 310.Notice:, so be not added in large quantities the total processing time of method 400 on the required time span of manufacturing device because method 400 is being implemented (promptly before making device on the wafer 201) on the naked wafer 201.
Then in step 414, prevent that just treated wafer 201 from producing deterioration owing to being subjected to thermal shock thereby reduce process duct 310 interior temperature.In one embodiment, by its temperature set-point being set in 400 ℃ of temperature that reduce in the process duct 310.After this, pole bracket 302 (referring to Fig. 3) thus can be programmed with the speed of about 2 cm per minute continue 3 minutes, between described moving, exist the mode of 1.5 minutes intermittent time to move sheath body 220 towards door 301.That is to say, the speed that sheath body 220 can 3 cm per minute continue 3 minutes, then intermittently 1.5 minutes, the speed with 3 cm per minute continued 3 minutes and then intermittently 1.5 minutes then, the mode that the rest may be inferred moves.
Along with sheath body 220 moves towards door 301, the openend 221 of sheath body 220 cools off more than blind end 224.Cause like this in container 210 producing thermal gradient, and the remainder of end cap 212 (its with openend 221 towards door 301) container 210 is colder.So that temperature is lower towards door 301, also can help the formation of thermal gradient in container 210 by the heater in the adjusting process pipe 310.The thermal gradient that exists in the container 210 causes end cap 212 to become the cold spot that attracts metal vapors to deposit away from wafer 201.
In step 416, from process duct 310, remove sheath body 220.From sheath body 220, remove container 210 subsequently.
In step 418, from container 210, remove wafer 201.Can open tube portion 213 (referring to Fig. 1) by at first breaking thus container 210 is exposed in the atmosphere, thereby implementation step 418.Can also use inert gas that container 210 is carried out re-injection.After this, for example use the diamond tool blade saw to downcut end cap 212 from body 211.
In step 420, wafer 201 is polished to remove deposit from its surface and its body is come out.In one embodiment, polish by two faces of employing chemically mechanical polishing, thereby each face is removed about 50 microns wafer 201.
In an experiment, the diameters that rotated 42 degree with respect to Y-axis according to 400 pairs five of methods of just having described are 100 millimeters lithium tantalate wafer, are known as " test wafers " hereinafter, handle.The zinc of test wafers together with 8 grams is placed in the container 210, in process duct 310, is heated to 595 ℃ subsequently and continues 240 hours.After this, reduce the temperature of process duct 310 and test wafers shifted out from container 210.Subsequently test wafers is carried out twin polishing and carried out visual examination.Test wafers looks even and has grey.Then by once a test wafers being placed on the hot plate, with 3 ℃/minute speed the temperature of hot plate is increased to 120 ℃ from 80 ℃, and measures near the electric field that is produced the wafer surface, thus the volume conductance of test experience wafer.Use is by 617 type potentiometer measurement electric fields of the Keithley Instruments production in joslyn hi-voltage city.Test wafers can not produce the electric field that measures that its volume conductance of any expression has increased at its near surface.
In order to compare, be 100 millimeters lithium tantalate wafer with undressed diameters that rotated 42 degree with respect to Y-axis, be known as " contrast wafer " hereinafter and be placed on the hot plate.Then, with 3 ℃/minute speed the temperature of hot plate is increased to 120 ℃ from 80 ℃.Near the contrast wafer surface electric field is measured 20 ℃ of the every variations of displays temperature, increase 400V.The volume conductance of this expression contrast wafer is relatively low.
Fig. 5 shows the schematic diagram of wafer cage 203A according to an embodiment of the invention.Wafer cage 203A is a specific embodiment of wafer cage 203 as illustrated in fig. 1 and 2.Wafer cage 203A can be used in method 400 or the technology of the method 1000 that is described in conjunction with Figure 10 hereinafter in.Yet, should be appreciated that wafer cage 203A is not limited, wafer cage 203A also can be used in other processing of wafers application.In addition, method 400 and method 1000 are not limited to use at this disclosed wafer cage 203, wafer cage 203A or miscellaneous equipment.Under the condition of not damaging advantage of the present invention, can also use different wafer processing apparatus implementation methods 400 and method 1000.
Wafer cage 203A comprises technology boat 510 and comprises the shell of top 521 and bottom 522.Boat 510 comprise U-shaped spare 511 (be 511-1,511-2), rod member 512 (be 512-1,512-2) and the rod 513 (be 513-1,513-2,513-3,513-4).Rod 513 and U-shaped spare 511 have formed the structure that is used for one or more wafer is remained on boat 510.Rod 513 can have one or more notches (referring to Fig. 6), and each notch has the width that is enough to receive the monolithic wafer.Wafer cage 203A for example can be made by quartz.Under the sort of situation, can utilize laser that the notch on the rod 513 is carried out machined.
The bottom 522 of shell comprise gap 526 (be 526-1,526-2,526-3,526-4).Each gap 526 formed respective clearance 527 with top 521 (be 527-1,527-2,527-3, hole 527-4).That is to say that in the time of on top 521 is placed on bottom 522, gap 526-1 and gap 527-1 have formed a hole, gap 526-2 and gap 527-2 have formed a hole, and the rest may be inferred.In Fig. 5, can't see gap 527-3 and 527-4 on the top 521.
Rest on the gap 526 by barre 512, boat 510 can be placed and be fastened on the bottom 522.For example, boat 510 can be placed on the bottom 522, makes the end of bar 512-1 be fixed on gap 526-2 and the 526-3, and the end of bar 512-2 is fixed on gap 526-1 and the 526-4.Bar 512 can be outstanding from gap 526, easily picks up boat 510 thereby be beneficial to operating personnel by the end of bar 512.Top 521 is positioned on the bottom 522 with sealing boat 510.Top 521 comprises the tip 524 (one of them is not shown) in the socket 525 (one of them is not shown) that inserts on the bottom 522 when two parts link together with sealing boat 510.
In the time of in being applied to wafer to be exposed to technology (for example method 400 and 1000) in the metal vapors, shell advantageously helps to hold near the metal vapors the wafer in the key step of described technology.Yet in the temperature-fall period when technology finishes, metal vapors may be transformed into the deposit that may form on wafer surface.Thereby described shell comprises the deposit that groove 523 advantageously will form and reduces to minimum on wafer.In temperature-fall period, described shell cools off sooner than within it wafer of dress, attract thus metal vapors overflow described shell and by groove 523 away from wafer.Groove 523 can also prevent from described shell to produce excessive pressure accumulated.
Fig. 6 shows the manufacturing specification of technology boat according to an embodiment of the invention.It shown in Fig. 6 a specific embodiment of boat 510.In example shown in Figure 6, have 25 notches on the described rod, thereby hold 25 wafers.By reducing the spacing between the notch, the boat shown in Fig. 6 can hold more wafer.For example can reduce described spacing so that boat holds 50 wafers.Thereby the length that can also increase described rod is held more wafer.Except as otherwise noted, otherwise the unit of the size in example shown in Figure 6 be the inch.
Fig. 7 shows the manufacturing specification of shell according to an embodiment of the invention.It shown in Fig. 7 a specific embodiment that comprises the shell of top 521 and bottom 522 as shown in Figure 5.Except as otherwise noted, otherwise the unit of the size in example shown in Figure 7 be the inch.
Fig. 8 shows the schematic diagram of container 210A according to an embodiment of the invention.Container 210A is a specific embodiment of container 210 as shown in Figure 1.Except add prominent mouth 801 in end cap 212A, container 210A is identical with container 210.Shared Reference numeral is represented same or analogous parts among Fig. 1 and Fig. 8.Container 210A for example can be made by quartz.Notice: under the condition of not damaging advantage of the present invention, container 210A and can make by other material that is different from disclosed material at this disclosed miscellaneous equipment.Those skilled in the art can select material to satisfy concrete requirement of using for disclosed equipment.
As shown in Figure 8, cage 203A can be used in the container 210A.
Fig. 9 shows a kind of system 900 that is used to increase the ferroelectric material volume conductance according to an embodiment of the invention.Except using container 210A but not the container 210, system 900 is identical with as shown in Figure 3 system 300.Shared Reference numeral is represented same or analogous parts among Fig. 3 and Fig. 9.In one embodiment, system 900 does not comprise the sheath body of closed container 210A.Wafer of handling and source metal (for example zinc particle) can be placed among the cage 203A, and cage 203A further can be placed among the container 210A.
Figure 10 shows a kind of block diagram of handling the method 1000 of ferroelectric material according to an embodiment of the invention.Using system 900 is described method 1000 as a limiting examples.
In step 1002, source metal and one or more wafer are placed among the container 210A.Can boat 510 and source metal be placed on bottom 522 by wafer being placed in the boat 510, cover bottom 522 with top 521, and then resulting assembly (being cage 203A) is placed in the body 211 of container 210A, thus implementation step 1002.
In step 1004, the end cap 212A of container 210A is welded on the body 211 with sealing cage 203A.Can prominent mouth 801 be opened by covering tube portion 213 (referring to Fig. 8), and in welding process, make nitrogen inflow pipe part 214 and pass through prominent mouth 801 outflows, thus implementation step 1004.Nitrogen is used as drier, thereby the steam purging that produces in the welding process is gone out container 210A.
In step 1006,210A bleeds to container.Can be by covering prominent mouth 801, holding tube part 213 is covered and pump is connected on the tube portion 214, thus implementation step 1006.In step 1006, need not have to container 210A is heated.Container 210A bled help from container 210A, to remove oxygen source, water and other pollutant.It is stable until its internal pressure to bleed to container 210A.In one embodiment, container 210A was bled about 5 minutes.
In step 1008, re-injection container 210A is so that the pressure in the container 210A is about 760 holders a little less than Curie temperature the time.Can use inert gas for example argon container 210A is carried out re-injection.Selectively, also can use in order to be captured in the forming gas that may remain in the oxygen among the container 210A after the step 1006 container 210A is carried out re-injection.Can smash lid and make it break away from tube portion 213 by connector 215 is welded on the tube portion 214, keep prominent mouth 801 to be covered, make re-injection gas flow through tube portion 213 then, container 210A is carried out re-injection.
In step 1010,210A seals to container.Can cover tube portion 213 by removing the recycle gas body source, holding tube part 214 is covered and keeps prominent mouth 801 to be covered, and container 210A is sealed.
In step 1012, container 210A is placed in the process duct 310 of system 900 (referring to Fig. 9).Container 210A can be placed on the stage casing of process duct 310, is the thermal treatment zone that is subjected to heater 303B heating in stage casing described in the example shown in Figure 9.Container 210A can be placed in the process duct 310 at ambient temperature.Notice: container 210A can be placed in the process duct 310 of not being with sheath body.
In step 1014, be ready to process duct 310 to move this technology.Can begin in stove, to flow and implementation step 1014 by making nitrogen.In technical process, the flow velocity continuous-flow that nitrogen can be about 5 liters/minute.Nitrogen helps to protect the parts of being made by quartz, is container 210A in this example, integrality.
In step 1016, the temperature in the lifting technique pipe 310.In one embodiment, with about 2.5 ℃/minute programming rate the temperature in the process duct 310 is increased to about 595 ℃.According to the concrete condition of employed process duct, heater 303A, 303B, 303C can be configured so that the temperature at the process duct middle part of placing container 210A remains in the target temperature (in this example for about 595 ℃) that is lower than Curie temperature.
In step 1018, allow the temperature stabilization in the process duct 310.Can be by before carry out step 1020, waiting for about 25 minutes and implementation step 1018.
In step 1020, heating container 210A reaches the object time amount under target temperature.Described target temperature is preferably a little less than the Curie temperature of the wafer of handling, and can change the object time amount to realize the target electrical conductivity of wafer.For example, can be under about 595 ℃ temperature about 25 hours of heating container 210A or shorter.The inventor thinks that heat time heating time is relevant with the volume conductance direct ratio.That is to say that heat time heating time is long more, the volume conductance of wafer is big more.For example, heat time heating time, about volume conductance of wafer that can make in 200 hours reached about 10
-10(Ω cm)
-1, and heat time heating time, about volume conductance of wafer that can make in 25 hours reached about 10
-12(Ω cm)
-1In order to compare, the volume conductance of undressed wafer can be about 10
-16(Ω cm)
-1Can change heat time heating time thus to satisfy the requirement of application-specific.
In step 1022, thereby the temperature that reduces in the process duct 310 prevents that wafer from producing deterioration owing to being subjected to thermal shock.In one embodiment, the temperature by reducing all thermals treatment zone in the process duct 310 with about 1.5 ℃/minute speed is to about 530 ℃ and implementation step 1022.
In step 1024, container 210A is pulled out from process duct 310.In one embodiment, adopt following operation container 210A to be pulled out from process duct 310 with the speed of about 3 cm per minute:
A) container 210A is pulled out 15 centimetres, wait for 1 minute;
C) container 210A is pulled out 10 centimetres, wait for 1 minute 10 second;
D) container 210A is pulled out 10 centimetres, wait for 1 minute 10 second;
E) container 210A is pulled out 10 centimetres, wait for 1 minute 10 second;
F) continue to pull out container 210A, until above 90 centimetres with 10 centimetres of increments;
G) be drawn out to the container 210A of the opening Distance Remaining of process duct 310 with the speed of 3 cm per minute.
In step 1026, after container 210A has cooled off, from container 210A, remove wafer.Can carry out wet etching or polishing to wafer may established in its surface deposit and expose its main body to remove.
Although specific embodiments of the invention are described, should be appreciated that these embodiment only are illustrative, and not restrictive.By reading this disclosure content, many other embodiment are tangible to those skilled in the art.Therefore, the present invention only is subjected to the restriction of following claim.
Claims (19)
1, a kind of method of handling ferroelectric material said method comprising the steps of:
Ferroelectric material and source metal are packed in the shell, and described shell comprises a plurality of openings;
Described shell is put into container;
The temperature of rising container;
Heating container reaches object time length under the temperature that is lower than the ferroelectric material Curie temperature, and the select target time span is so that ferroelectric material obtains the target electrical conductivity; And
Reduce the temperature of container, wherein during reducing described vessel temp, metal vapors flows out from described shell by described a plurality of openings.
2, method according to claim 1, wherein said object time length is substantially 25 hours or shorter.
3, method according to claim 1, wherein said source metal comprises zinc.
4, method according to claim 1, wherein pack into ferroelectric material and source metal may further comprise the steps:
Ferroelectric material and source metal are placed in the first of container;
The first of container is connected with the second portion of container, makes drier flow through described container simultaneously.
5, method according to claim 4, the second portion that wherein connects the first of container and container relates to welding and described drier comprises nitrogen.
6, method according to claim 1 further may further comprise the steps:
From described container, remove ferroelectric material; And
Remove deposit from described ferroelectric material.
7, method according to claim 1 further may further comprise the steps:
Before the temperature of described container that raises, described container is bled and after this used the described container of inert gas re-injection.
8, method according to claim 1, wherein said ferroelectric material comprises lithium tantalate.
9, a kind of system that is used to handle ferroelectric material, described system comprises:
One shell of a plurality of ferroelectric materials and the source metal of packing into, described shell comprises a plurality of openings;
The container that comprises described shell; With
Process duct, described process duct is configured the temperature in order to the described container that raises, heating container reaches certain hour length under the temperature that is lower than the ferroelectric material Curie temperature, and the temperature that reduces described container, thereby makes source metal steam and ferroelectric material react.
10, system according to claim 9, wherein said ferroelectric material comprises lithium tantalate wafer.
11, system according to claim 9, wherein said cage comprises and is configured in order to the boat that keeps ferroelectric material and is configured in processing procedure in order to seal the shell of described boat.
12, a kind of method that is used to increase the ferroelectric material volume conductance said method comprising the steps of:
A plurality of lithium tantalate wafers and source metal are packed in the shell, and described shell comprises a plurality of openings;
Described shell is put into container;
Container is placed in the process duct;
The temperature of described container raises;
The described container of heating under the target temperature of the Curie temperature that is lower than lithium tantalate wafer;
Reduce the temperature of described container; And
With the target speed of pulling out described container is pulled out from process duct.
13, method according to claim 12, the wherein said target speed of pulling out are about 3 cm per minute.
14, method according to claim 12 further may further comprise the steps:
Before being placed on container in the process duct, described container is bled and after this used the described container of inert gas re-injection.
15, method according to claim 14, wherein said inert gas comprises argon.
16, method according to claim 14, wherein said source metal comprises zinc.
17, method according to claim 14 further may further comprise the steps:
Before being placed on container in the process duct, make gas flow pass through described container, cover described container simultaneously.
18, method according to claim 14, wherein described container is heated about 25 hours or shorter under target temperature.
19, method according to claim 14, wherein said target temperature are about 595 ℃.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48005503P | 2003-06-20 | 2003-06-20 | |
| US60/480,055 | 2003-06-20 | ||
| US10/865,092 | 2004-06-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1838988A CN1838988A (en) | 2006-09-27 |
| CN100540134C true CN100540134C (en) | 2009-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004800239159A Expired - Fee Related CN100540134C (en) | 2003-06-20 | 2004-06-10 | Be used to increase the method and apparatus of ferroelectric material volume conductance |
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| Country | Link |
|---|---|
| CN (1) | CN100540134C (en) |
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| CN1838988A (en) | 2006-09-27 |
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