CN100537412C - Preparation process of nanometer dot array in controllable size with inverse porous nanometer ball template - Google Patents
Preparation process of nanometer dot array in controllable size with inverse porous nanometer ball template Download PDFInfo
- Publication number
- CN100537412C CN100537412C CNB2006100897370A CN200610089737A CN100537412C CN 100537412 C CN100537412 C CN 100537412C CN B2006100897370 A CNB2006100897370 A CN B2006100897370A CN 200610089737 A CN200610089737 A CN 200610089737A CN 100537412 C CN100537412 C CN 100537412C
- Authority
- CN
- China
- Prior art keywords
- template
- nanometer
- nanosphere
- polystyrene
- die plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000002904 solvent Substances 0.000 claims abstract description 26
- 239000011258 core-shell material Substances 0.000 claims abstract description 11
- 239000002077 nanosphere Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 49
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 42
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 34
- 239000007787 solid Substances 0.000 claims description 34
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 23
- 238000001020 plasma etching Methods 0.000 claims description 20
- 238000001338 self-assembly Methods 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 18
- 238000004090 dissolution Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 16
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 229920005553 polystyrene-acrylate Polymers 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229920003053 polystyrene-divinylbenzene Polymers 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910018979 CoPt Inorganic materials 0.000 claims description 3
- 229910005335 FePt Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- 229920006322 acrylamide copolymer Polymers 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 34
- 238000000151 deposition Methods 0.000 abstract description 31
- 238000005516 engineering process Methods 0.000 abstract description 27
- 239000000463 material Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000000992 sputter etching Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 29
- 239000010408 film Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 239000011805 ball Substances 0.000 description 7
- 239000000084 colloidal system Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000009415 formwork Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 229920006243 acrylic copolymer Polymers 0.000 description 4
- 229920001400 block copolymer Polymers 0.000 description 4
- 239000011807 nanoball Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 3
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 3
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004043 dyeing Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000001404 mediated effect Effects 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000009395 genetic defect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The present invention belongs to the field of nanometer photoetching technology, and is especially preparation process of nanometer dot array in controllable density and unit size by means of inverse porous nanometer ball template. The preparation process includes the first self-assembling of monodisperse core-shell nanometer ball to obtain nanometer ball template in single layer regular arrangement; selective dissolving to obtain reverse porous array; modifying the reverse pores in the template by means of reaction ion etching technology to obtain penetrative depositing channels; and depositing one layer of film via film preparing technology and dissolving the porous template in selective solvent to obtain regularly arranged circular nanometer dot array. The said preparation process can prepare dot array of different materials and in high density and controllable size, and may be used in preparing nanometer dot array device and optimizing performance.
Description
Technical field
Present technique belongs to the nano-photoetching field.Be particularly related to and use the anti-phase porous array template of core-shell nanospheres to obtain to be applicable to the nanometer lattice row preparation method that the high density unit size is controlled in conjunction with late phase reaction ion etching modification.
Background technology
The regular nanometer lattice row of two dimension has been widely used in a plurality of fields such as high density quantum formula magnetic recording, photonic crystal, biology sensor and opto-electronic device at present because it has special structure and performance has very high using value.So far, there are many methods to prepare nanometer lattice row.At present commonly used is top-down photo etched mask technology, and this method precision height, controllability are good, but the cost height, the equipment complexity; The method that also has electron beam lithography and focused-ion-beam lithography simultaneously, these method and technology complexity, efficient is low, the cost height.
Utilization method from bottom to top can be prepared the regular nano-array of large tracts of land in conjunction with etching technics in recent years, and these technology have good prospect and the extensive studies that is subjected to.Have following three kinds of technology:
The one, nanosphere positive template method.Promptly on pipe/polyhenylethylene nano ball positive template basis, utilize plasma etching technology to prepare controlled nanometer lattice row technology (the Peiwen Wu of unit size, Liangqiang Peng, Xinlin Tuo, Xiaogong Wang andJunYuan, Nanotechnology, 2005,16:1693-1696).The nanosphere self assembly forms positive template, uses reactive ion etching technology to because the deposition passage that the nanosphere distortion is stopped up carries out reaming subsequently, fills other materials subsequently, removes original nanosphere template, obtains leg-of-mutton nanometer lattice row.
The 2nd, the anodic oxidation aluminium formwork method.Promptly use the porous anodic aluminium oxide masterplate in conjunction with lithographic technique prepare metal and semiconductor nano lattice array (Jianyu Liang, Hope Chik, Aijun Yin and Jimmy Xu, Journal of Applied Physics, 2002,91:2544-2546).Adopt the anodic oxidation aluminium formwork of the method formation through hole of wet etching or reactive ion etching, alumina formwork is transferred on the different substrates, filling semiconductor or metal form nanometer lattice row.
The 3rd, the block copolymer template method.Promptly use block copolymer to be separated and form orderly column microdomain, association reaction ion etching technology is manufacturing cycle nanometer lattice row (Miri Park on initial substrates, Christopher Harrison, Paul M.Chaikin, Richard A.Register, Douglas H.Adamson, Science, 1997,276:1401-1404).Revolve plating and form the block copolymer film, the formation column-form that is separated is etched on the original substrate after the heavy metal dyeing and forms nanometer lattice row.This arts demand uses heavy metal dyeing, complex process.
But said method all has certain limitation: method one obtains the triangle dot matrix, and effective area is little, and defective is many; Method two antianode alumina formwork quality requirement height, the nano dot diameter is difficult to accurate control by the control of alumina formwork aperture; Method three accurately the control reaction condition obtaining suitable copolymer released state, the preparation process more complicated, universality is relatively poor.
Summary of the invention
The purpose of this invention is to provide a kind of method of utilizing the anti-phase foraminous die plate preparation size of nanosphere controllable nano lattice array, this method utilizes the anti-phase foraminous die plate of core-shell nanospheres to prepare the high density lattice array, and can independently control nanometer lattice row unit size and density.Thereby the relative simple nanometer lattice row of can preparing that effective area is big, defective is few with technology.
Technical scheme of the present invention is as follows:
A kind of method of utilizing the anti-phase foraminous die plate preparation size of nanosphere controllable nano lattice array is characterized in that this method may further comprise the steps:
1) utilizes czochralski method on silicon chip, to carry out list and disperse the core-shell nanospheres self assembly, form the nanosphere array of individual layer rule solid matter;
2) the nanosphere array with the rule of the individual layer in step 1) solid matter places selective solvent, 0～80 ℃ of the temperature that controls environment, and dissolution time 0.5～30min takes out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the reactive ion etching machine, charge into reacting gas, etching air pressure is 5～50Pa, power 5～30W, and etch period 0.5～30 minute obtains to run through foraminous die plate;
4) deposit layer of metal, alloy, semiconductor or sull on the foraminous die plate running through, its thickness is 20～100nm;
5) foraminous die plate behind the evaporation is placed cleaning solvent ultrasonic cleaning 5～60min, after the taking-up, clean in order, obtain nanometer lattice row with acetone, alcohol, deionized water.
The mass ratio of nuclear consitution in the core-shell nanospheres of the present invention and shell component is 1:1～19:1.
Core-shell nanospheres of the present invention is the nucleocapsid structure colloidal spheres of polystyrene-acrylic acid, polystyrene-methacrylic acid, polystyrene-acrylate, polystyrene-methacrylate or polystyrene-divinylbenzene and polystyrene-acrylamide copolymer.The mixing of one or more in described selective solvent employing benzene,toluene,xylene, oxolane, chloroform, carrene or the styrene.Described cleaning solvent is one or more the mixing in acetone, methyl alcohol, ethanol, benzene, toluene, styrene, ultra-pure water or the chloroform.
It is the etching machine in etching source that etching machine of the present invention adopts with ion beam, electron beam, sigmatron or laser beam.Described metal adopts Al, Cu, Au, Ag, Ti, Zn, Cr, Fe, Co or Ni, and described alloy is FePt or CoPt; Semiconductor is GaN or GaAs; Oxide is SiO
2Or TiO
2
The present invention compared with prior art has the following advantages and the high-lighting effect:
1. it is little to the present invention is directed to the triangle dot matrix effective area that nanosphere positive template method obtains, and the shortcoming that defective is many is used reactive ion etching that the anti-phase porous array of nanosphere is modified and obtained the deposition passage that runs through, as Fig. 3 (A); The effective area of the circular nanometer lattice row of deposit film preparation is big on this basis, accounts for more than 70% of the gross area, as Fig. 3 (B).Deposit film does not appear in the genetic defects place, becomes blank space, has reduced the later stage defective and has occurred.2. the present invention is directed to the anodic oxidation aluminium formwork method and be difficult to accurately control the shortcoming of nano dot size, the diameter of the nanohole array that forms by the mass ratio control of controlling nuclear in the original core-shell nanospheres and shell structure, thereby the nano dot size that control forms.Can control the density of the lattice array of formation simultaneously by the diameter of control nanosphere.3. the present invention is directed to the shortcoming of block copolymer template method operating procedure complexity, universality, directly control the deposition passage based on foraminous die plate is modified, easy and simple to handle; Film deposition process is applicable to the lattice array preparation of various materials simultaneously, has good universality.
In a word, the present invention compared with prior art, the nanometer lattice row effective area of preparation is big, defective is few, can be applicable to the nano-device based on lattice array, as magnetic storage, sensor etc.Density and unit size to nanometer lattice row all can independently be controlled, thereby obtain the device performance optimization based on the unit size modulation.And this method raw material sources are extensive, can prepare the lattice array of metal, alloy, semiconductor or oxide, and the overall operation process is simple, and technology is easy.
Description of drawings
Fig. 1 (A) is the nanosphere array of the individual layer rule solid matter of diameter 263nm polystyrene-acrylate/nano ball self assembly formation.
Fig. 1 (B) is the anti-phase porous array template figure that diameter 263nm polystyrene-acrylate/nano ball array forms.
Fig. 2 is for obtaining the variation relation of the anti-phase porous array template of different aperture-gap ratios by the polystyrene-acrylate/nano ball that uses different nucleocapsid ratios: the transverse axis acrylic acid content is mass ratio, and total content is " 1 "; Longitudinal axis position bore dia and pitch of holes ratio, dimensionless.
Fig. 3 (A) runs through foraminous die plate vertical view and the inclination figure that deposits passage for the anti-phase porous array template of diameter 370nm polystyrene-acrylic acid through forming after the reactive ion etching.
Fig. 3 (B) is the vertical view and the figure that tilts (lattice array diameter 220nm, height 30nm) of the circular nickel metal nano lattice array of the anti-phase porous array template formation of diameter 370nm polystyrene-acrylic acid.
The specific embodiment
By single self assembly that disperses core-shell nanospheres, obtain the nanosphere template of individual layer rule solid matter earlier.Method by selective dissolution obtains anti-phase porous array.Utilize reactive ion etching technology, the deposition passage that acquisition runs through is modified in the anti-phase hole in the template.On template, deposit thin film by film preparing technology then, and in selective solvent, dissolve foraminous die plate, obtain regularly arranged circular nanometer lattice row.By with the combining of different materials film preparing technology, the preparation method who uses this nanometer lattice row can prepare the high density of different materials, controllable size lattice array, can be used for device preparation and performance optimization based on nanometer lattice row.
Embodiment 1:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-acrylic copolymer colloid ball (nucleocapsid mass ratio be 15:1) of diameter, obtain the nanosphere template of individual layer rule solid matter, as Fig. 1 (A) as 263nm;
2) the nanosphere template with individual layer rule solid matter places toluene solvant, and 0 ℃ of temperature that controls environment and dissolution time 0.5min take out the dry anti-phase foraminous die plate that obtains, as Fig. 1 (B);
3) anti-phase foraminous die plate is placed in the reactive ion etching machine, utilize O
2As etching gas, etching air pressure is 20Pa, power 20W, etch period 3 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize vacuum evaporation technology, the thick argent of evaporation 60nm on template.
5) template behind the plated film is placed toluene solvant ultrasonic cleaning 30min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 2:
1) utilizes spin-coating method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-acrylic copolymer colloid ball (nucleocapsid mass ratio be 19:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 370nm;
2) the nanosphere template with individual layer rule solid matter places chloroform solvent, and 50 ℃ of temperature that controls environment and dissolution time 20min take out the dry anti-phase foraminous die plate that obtains, as Fig. 2;
3) anti-phase foraminous die plate is placed in the reactive ion etching machine, utilize CF
4As etching gas, etching air pressure is 50Pa, power 5W, etch period 0.5 minute.Obtain good through hole structure and form the deposition passage, as Fig. 3 (A).
4) utilize the electron beam evaporation plating technology, the thick metallic nickel of evaporation 80nm on template.
5) template behind the plated film is placed benzene solvent ultrasonic cleaning 60min.After the taking-up, clean in order with acetone, alcohol, deionized water, the circular nanometer lattice row of formation rule is as Fig. 3 (B).
Embodiment 3:
1) utilizes the electric field induction and deposition on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-acrylic copolymer colloid ball (nucleocapsid mass ratio be 9:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 455nm;
2) the nanosphere template with individual layer rule solid matter places xylene solvent, and 80 ℃ of temperature that controls environment and dissolution time 30min take out the dry anti-phase foraminous die plate that obtains, as Fig. 2;
3) anti-phase foraminous die plate is placed in the reactive ion etching machine, utilize Cl
2As etching gas, etching air pressure is 25Pa, power 30W, etch period 10 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize the magnetically controlled DC sputtering technology, the alloy FePt that sputter 100nm is thick on template.
5) template behind the plated film is placed methanol solvate ultrasonic cleaning 30min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 4:
1) utilizes the template-mediated method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-methacrylic acid copolymer colloidal spheres (nucleocapsid mass ratio be 5:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 215nm;
2) the nanosphere template with individual layer rule solid matter places benzene solvent, and 20 ℃ of temperature that controls environment and dissolution time 20min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the reactive ion etching machine, utilize CHF
3As etching gas, etching air pressure is 5Pa, power 30W, etch period 10 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize radiofrequency magnetron sputtering technology, the alloy CoPt that sputter 20nm is thick on template.
5) template behind the plated film is placed alcohol solvent ultrasonic cleaning 10min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 5:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-divinylbenzene copolymer colloid ball (nucleocapsid mass ratio be 1:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 600nm;
2) the nanosphere template with individual layer rule solid matter places tetrahydrofuran solvent, and 60 ℃ of temperature that controls environment and dissolution time 30min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the plasma etching machine, utilize O
2As etching gas, etching air pressure is 30Pa, power 20W, etch period 5 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize molecular beam epitaxy technique, the thick semiconductor GaN of deposition 60nm on template.
5) template behind the plated film is placed ultra-pure water solvent ultrasonic cleaning 45min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 6:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-acrylamide copolymer colloidal spheres (nucleocapsid mass ratio be 4:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 800nm;
2) the nanosphere template with individual layer rule solid matter places dichloromethane solvent, and 80 ℃ of temperature that controls environment and dissolution time 30min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the plasma etching machine, utilize HF as etching gas, etching air pressure is 50Pa, power 15W, etch period 20 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize molecular beam epitaxy technique, the thick semiconductor GaAs of deposition 100nm on template.
5) template behind the plated film is placed acetone solvent ultrasonic cleaning 60min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 7:
1) utilizes spin-coating method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-acrylate copolymer colloidal spheres (nucleocapsid mass ratio be 7:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 1000nm;
2) the nanosphere template with individual layer rule solid matter places styrene solvent, and 80 ℃ of temperature that controls environment and dissolution time 30min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the plasma etching machine, utilize O
2As etching gas, etching air pressure is 50Pa, power 30W, etch period 30 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize molecular beam epitaxy technique, the thick semiconductor GaN of deposition 60nm on template.
5) template behind the plated film is placed toluene solvant ultrasonic cleaning 60min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 8:
1) utilizes electric field to induce the self assembly of on the silicon chip of cleaning surfaces, carrying out nanosphere, use the polystyrene-divinylbenzene copolymer colloid ball (nucleocapsid mass ratio be 2:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 500nm;
2) the nanosphere template with individual layer rule solid matter places tetrahydrofuran solvent, and 30 ℃ of temperature that controls environment and dissolution time 20min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the plasma etching machine, utilize O
2As etching gas, etching air pressure is 30Pa, power 20W, etch period 5 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize the pulsed laser deposition technology, the thick oxide ZnO of deposition 40nm on template.
5) template behind the plated film is placed styrene solvent ultrasonic cleaning 30min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 9:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-methacrylate copolymer colloidal spheres (nucleocapsid mass ratio be 15:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 100nm;
2) the nanosphere template with individual layer rule solid matter places toluene and benzene mixed solvent, and 20 ℃ of temperature that controls environment and dissolution time 5min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the plasma etching machine, utilize F
2As etching gas, etching air pressure is 5Pa, power 5W, etch period 1 minute.Obtain good through hole structure and form the deposition passage.
4) utilize the pulsed laser deposition technology, the thick oxide TiO of deposition 25nm on template
2
5) template behind the plated film is placed toluene and benzene solvent ultrasonic cleaning 5min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 10:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-methacrylate copolymer colloidal spheres (nucleocapsid mass ratio be 5:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 300nm;
2) the nanosphere template with individual layer rule solid matter places toluene and styrene solvent, and 40 ℃ of temperature that controls environment and dissolution time 8min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the plasma etching machine, utilize SF
6As etching gas, etching air pressure is 15Pa, power 10W, etch period 4 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize pulsed laser deposition technique, the thick semiconductor SiO of deposition 80nm on template
2
5) template behind the plated film is placed toluene and acetone solvent ultrasonic cleaning 15min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 11:
1) utilizes the template-mediated method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-divinylbenzene copolymer colloid ball (nucleocapsid mass ratio be 10:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 800nm;
2) the nanosphere template with individual layer rule solid matter places tetrahydrofuran solvent, and 30-60 ℃ of temperature that controls environment and dissolution time 0.5-20min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the reactive ion etching machine, utilize CCl
4As etching gas, etching air pressure is 40Pa, power 30W, etch period 15 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize the electron beam evaporation plating technology, the thick metal Fe of deposition 80nm on template.
5) template behind the plated film is placed benzene and toluene mixed solvent ultrasonic cleaning 60min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 12:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-methacrylic acid copolymer colloidal spheres (nucleocapsid mass ratio be 8:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 300nm;
2) the nanosphere template with individual layer rule solid matter places tetrahydrofuran solvent, and 30 ℃ of temperature that controls environment and dissolution time 10min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the reactive ion etching machine, utilize SiCl
4As etching gas, etching air pressure is 30Pa, power 20W, etch period 5 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize the electron beam deposition technology, the thick metal A u of deposition 60nm on template.
5) template behind the plated film is placed chloroform solvent ultrasonic cleaning 40min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 13:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-methacrylic acid copolymer colloidal spheres (nucleocapsid mass ratio be 6:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 150nm;
2) the nanosphere template with individual layer rule solid matter places tetrahydrofuran solvent, and 10 ℃ of temperature that controls environment and dissolution time 4min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the sigmatron etching machine power 25W, etch period 5 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize the electron beam deposition technology, the thick Metal Cr of deposition 20nm on template.
5) template behind the plated film is placed chloroform and benzene solvent ultrasonic cleaning 30min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Embodiment 14:
1) utilizes czochralski method on the silicon chip of cleaning surfaces, to carry out the self assembly of nanosphere, use the polystyrene-acrylic copolymer colloid ball (nucleocapsid mass ratio be 12:1) of diameter, obtain the nanosphere template of individual layer rule solid matter as 670nm;
2) the nanosphere template with individual layer rule solid matter places styrene solvent, and 60 ℃ of temperature that controls environment and dissolution time 20min take out the dry anti-phase foraminous die plate that obtains;
3) anti-phase foraminous die plate is placed in the electron beam lithography machine power 20W, etch period 15 minutes.Obtain good through hole structure and form the deposition passage.
4) utilize the electron beam deposition technology, the thick metal Ti of deposition 80nm on template.
5) template behind the plated film is placed toluene solvant ultrasonic cleaning 60min.After the taking-up, clean the circular nanometer lattice row of formation rule in order with acetone, alcohol, deionized water.
Claims (5)
1. method of utilizing the anti-phase foraminous die plate preparation size of nanosphere controllable nano lattice array is characterized in that this method may further comprise the steps:
1) utilizes czochralski method on silicon chip, to carry out list and disperse the core-shell nanospheres self assembly, form the nanosphere array of individual layer rule solid matter;
2) the nanosphere array with the rule of the individual layer in step 1) solid matter places selective solvent, 0～80 ℃ of the temperature that controls environment, and dissolution time 0.5～30min takes out the dry anti-phase porous array template that obtains; The mixing of one or more in described selective solvent employing benzene,toluene,xylene, oxolane, chloroform, carrene or the styrene;
3) anti-phase porous array template is placed in the reactive ion etching machine, charge into reacting gas, etching air pressure is 5～50Pa, power 5～30W, and etch period 0.5～30 minute obtains to run through foraminous die plate;
4) deposit layer of metal, alloy, semiconductor or sull on the foraminous die plate running through, its thickness is 20～100nm;
5) foraminous die plate behind the evaporation is placed cleaning solvent ultrasonic cleaning 5～60min, after the taking-up, clean in order, obtain nanometer lattice row with acetone, alcohol, deionized water; Described cleaning solvent is one or more the mixing in acetone, methyl alcohol, ethanol, benzene, toluene, styrene, ultra-pure water or the chloroform.
2. the method for claim 1, it is characterized in that: the mass ratio of the nuclear consitution of described core-shell nanospheres and shell component is 1:1～19:1.
3. method as claimed in claim 1 or 2 is characterized in that: described core-shell nanospheres is the nucleocapsid structure colloidal spheres of polystyrene-acrylic acid, polystyrene-methacrylic acid, polystyrene-acrylate, polystyrene-methacrylate or polystyrene-divinylbenzene and polystyrene-acrylamide copolymer.
4. preparation method as claimed in claim 1 is characterized in that: it is the etching machine in etching source that described etching machine adopts with ion beam, electron beam, sigmatron or laser beam.
5. preparation method as claimed in claim 1 is characterized in that: described metal adopts Al, Cu, Au, Ag, Ti, Zn, Cr, Fe, Co or Ni, and alloy is FePt or CoPt; Semiconductor is GaN or GaAs; Oxide is ZnO, SiO
2Or TiO
2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100897370A CN100537412C (en) | 2006-07-14 | 2006-07-14 | Preparation process of nanometer dot array in controllable size with inverse porous nanometer ball template |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100897370A CN100537412C (en) | 2006-07-14 | 2006-07-14 | Preparation process of nanometer dot array in controllable size with inverse porous nanometer ball template |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1887688A CN1887688A (en) | 2007-01-03 |
| CN100537412C true CN100537412C (en) | 2009-09-09 |
Family
ID=37576967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100897370A Expired - Fee Related CN100537412C (en) | 2006-07-14 | 2006-07-14 | Preparation process of nanometer dot array in controllable size with inverse porous nanometer ball template |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100537412C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101051185B (en) * | 2007-05-23 | 2010-11-03 | 中国科学院光电技术研究所 | Photoetching positioning self-assembly filling method |
| CN101538008B (en) * | 2009-04-29 | 2010-12-01 | 北京大学 | Method for preparing nano-mesh film |
| CN102173376B (en) * | 2011-02-25 | 2013-10-16 | 复旦大学 | Preparation method for small silicon-based nano hollow array with orderly heights |
| CN102180438A (en) * | 2011-03-28 | 2011-09-14 | 中国科学院光电技术研究所 | Manufacturing method of tunable triangular metal nanoparticle array structure |
| CN104141108A (en) * | 2014-08-06 | 2014-11-12 | 宁波工程学院 | Method for manufacturing size-controllable two-dimensional nanostructure of CrN nanopore array |
| CN106334190B (en) * | 2016-08-25 | 2019-09-24 | 北京科技大学 | A kind of multiple response mechanism compound pharmaceutical carrier and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1553219A (en) * | 2003-12-18 | 2004-12-08 | 同济大学 | Preparing method for nanometer porous silica thin-membrane |
-
2006
- 2006-07-14 CN CNB2006100897370A patent/CN100537412C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1553219A (en) * | 2003-12-18 | 2004-12-08 | 同济大学 | Preparing method for nanometer porous silica thin-membrane |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1887688A (en) | 2007-01-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102173376B (en) | Preparation method for small silicon-based nano hollow array with orderly heights | |
| CN100537412C (en) | Preparation process of nanometer dot array in controllable size with inverse porous nanometer ball template | |
| CN101508419B (en) | Processing method for nano-pole forest | |
| CN101746714B (en) | Preparation method for metal nano structure array | |
| CN103641064B (en) | Metal-silicon dioxide multilayer film hollow nano structure array and preparation method thereof | |
| Sun et al. | A universal approach to fabricate various nanoring arrays based on a colloidal‐crystal‐assisted‐lithography strategy | |
| CN103641059A (en) | Silicon-pillared metal film nano-structure array and preparation method thereof | |
| CN101692151B (en) | Method for manufacturing silicon nano-wire based on soft template nano-imprinting technique | |
| CN103172019B (en) | A kind of preparation technology of dry adhesion micro-nano compound two-stage incline structure | |
| CN102530845B (en) | Method for preparing triangular metal nano-pore array | |
| CN101430503A (en) | Method for removing double-layer glue for electron beam lithography stripping | |
| CN103933902B (en) | A kind of binary ordered colloidal crystal, metal nano array and preparation method thereof | |
| CN109795979A (en) | The preparation method of nano-pore array structure with embedded metal ring | |
| CN109712879A (en) | A kind of metal mask forming method for wafer dry etch process | |
| CN100470872C (en) | Preparation method of organic molecular device with nanoscale cross-line array structure | |
| CN111071985A (en) | Method for securing metal nanoparticles with an anodized aluminum film incorporating a sacrificial layer | |
| CN101049905A (en) | Preparation method for developing single Nano line or array type Nano lines | |
| CN106185792A (en) | A kind of population parameter controllable method for preparing of super-hydrophobic micro-nano compound structure | |
| CN105568228A (en) | Preparation method of radial metal nanowire-ceramic composite film | |
| CN102636958A (en) | Thin film structure capable of improving laser thermal etching graphics resolution and preparation method of thin film structure | |
| CN115180589B (en) | Method for manufacturing atomic and near-atomic scale functional structure device | |
| Saidov et al. | Controlled Stepwise Wet Etching of Polycrystalline Mo Nanowires | |
| CN109941960B (en) | Method for preparing nanopore array structure | |
| CN100373588C (en) | Preparation method of organic molecular device with cross line array structure | |
| CN102633229B (en) | Method for preparing superlens with planar imaging surface by using twice ion beam etching technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090909 Termination date: 20100714 |