CN100537149C - Polishing pad and chemico-mechanical polishing method - Google Patents
Polishing pad and chemico-mechanical polishing method Download PDFInfo
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- CN100537149C CN100537149C CNB2006101188348A CN200610118834A CN100537149C CN 100537149 C CN100537149 C CN 100537149C CN B2006101188348 A CNB2006101188348 A CN B2006101188348A CN 200610118834 A CN200610118834 A CN 200610118834A CN 100537149 C CN100537149 C CN 100537149C
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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Abstract
The invention provides a polishing pad; the polishing surface of the polishing pad is provided with a plane area and a concave/convex area; the plane area is a flat surface with the coarseness less than 20 Mu m used for polishing wafer; the concave/convex area is provided with troughs or holes or the combination of the troughs and holes used for pulling the wafer out of the polishing surface. By adopting the polishing pad provided by the invention, the wafer after chemically and mechanically polished has high surface smoothness; after the polishing is finished, the wafer is moved to the concave/convex area of the polishing pad and the wafer is easy to be pulled out of the surface of the polishing pad.
Description
Technical field
The present invention relates to the chemical-mechanical polishing of semiconductor processing procedure, specifically, relate to a kind of polishing pad and a kind of cmp method that makes the crystal column surface high-flatness of chemically mechanical polishing.
Background technology
Chemically mechanical polishing (CMP) technology was introduced the integrated circuit process industry by IBM in 1984, and at first be used in the planarization of the intermetallic dielectric (IMD) of postchannel process, be used for the planarization of tungsten (W) then by the improvement of equipment and technology, be used for the planarization of shallow trench isolation subsequently from (STI) and copper (Cu).Chemically mechanical polishing (CMP) is the fastest, the most valued technology of growing up in the IC processing procedure in recent years.
The CMP glossing is in the atmospheric environment of dust free room, utilize mechanical force to the crystal column surface effect, produce the power make thin layer fracture and corrosion thin layer at crystal column surface, and polishing process must nationality be interacted by chemical substance in the lapping liquid and thin layer and increases its etched efficient.Most important two big assemblies are polishing fluid (slurry) and polishing pad (pad) in the CMP processing procedure.The oxide powder that polishing fluid is normally very thin with some is dispersed in the aqueous solution and makes.Polishing pad is to use the porous polyurethane of foaming type to make mostly.In the CMP processing procedure, allow polishing fluid be filled in the space of polishing pad earlier, and high-revolving condition is provided, allow wafer under rotation at a high speed and the powder effect in polishing pad and the polishing fluid, control simultaneously to the pressure and other parameters that presses down.
Application number is the structure that the Chinese patent of CN01814133 has disclosed a kind of polishing pad, has burnishing surface, the surface that directly contacts with wafer when burnishing surface is chemically mechanical polishing.The burnishing surface of described polishing pad has three-dimensional structure, this three-dimensional structure comprises many regularly arranged three-D elements with reservation shape, the shape of single 3 D element can be any in various geometrical solid body, between the adjacent three-D elements recess is arranged, three-D elements as shown in Figure 1 is that the pyramid shape with flat top surface that forms to predetermined altitude is clipped at the top.Application number is the structure that the Chinese patent of CN03140681 has disclosed another kind of polishing pad, recess with and at least a shape that from be trellis, ring-type and helical form select that form, described polishing pad in the burnishing surface side can also be in trellis, ring-type or the helical form one or several recess or run through through hole in the polishing pad table.Be illustrated in figure 2 as the polishing pad structure that burnishing surface has the recess structure of circular concentric.The polishing pad that uses in the present chemical mechanical polishing manufacture procedure has above-mentioned three-dimensional structure mostly or has the burnishing surface of trellis, ring-type and helical form recess, and the polishing pad of this structure can make polishing fluid disperse preferably.But, owing to all have recess on the burnishing surface of these polishing pads, can stay and the similar recess of burnishing surface structure at crystal column surface when carrying out chemically mechanical polishing, the flatness of crystal column surface is reduced.
Practice shows, for the semiconductor devices of routine, uses burnishing surface as the concentric circles annular or as the polishing pad of the three-D elements of reservation shape crystal column surface to be carried out chemically mechanical polishing, and the flatness of crystal column surface can both satisfy the application requirements of device.But, for some wafer that is applied to optical instrument as the wafer that is used for image transmission and image treatment element and to crystal column surface quality requirement high product, owing to require high especially to wafer surface flatness, use this polishing pad that has recess to carry out the application requirements that wafer surface flatness that chemically mechanical polishing obtains can not satisfy device mostly, the product yield is very low.For example will have the image transmission apparatus that wafer that polishing pad carries out chemically mechanical polishing is used for LCD now, can cause liquid crystal display surface to seem similar striated, this is because the rough and uneven in surface aberration that causes of wafer surface after chemico-mechanical polishing is presented at the result of liquid crystal display surface.
In order to make crystal column surface obtain better flatness, the wafer that is used for the image transmission can not use the method for chemically mechanical polishing to carry out surface treatment, therefore, adopts the method for chemical etching to handle mostly.But the wafer surface roughness of Chu Liing is much larger than the surface that the method for using chemically mechanical polishing is handled in this way, and it is residual also to have oxide in some zone; The surface that local flatness is also handled not as the method for using chemically mechanical polishing.
If the polishing pad that uses the surface not have the groove that application number describes as the Chinese patent of CN01814133 and CN03140681 carries out chemically mechanical polishing, promptly use the polishing pad that has an even surface directly to carry out chemically mechanical polishing, though can overcome the defective that wafer surface flatness can not meet the demands, but, after the polishing pad that use has an even surface carries out chemically mechanical polishing, the burnishing surface of crystal column surface and polishing pad is all more smooth, therefore wafer and polishing pad are difficult to wafer is extracted from pad interface in conjunction with closely.
Summary of the invention
The problem to be solved in the present invention is that the crystal column surface of polishing pad of the prior art polishing can not satisfy the optics that is used for the image transmission and to the application requirements of crystal column surface quality requirement high product, and the existing polishing pad that has an even surface polishes the back wafer and is difficult to extract from burnishing surface.
For addressing the above problem, the invention provides on the burnishing surface of the described polishing pad of a kind of polishing pad and have plane area and embossed area, described plane area is the flat surfaces of roughness less than 20um, be used for wafer polishing, described embossed area has groove, hole or their combination, is used for after the polishing wafer being pulled up from burnishing surface.
Further, described plane area surrounds embossed area, and the geometric center of embossed area overlaps with the geometric center of burnishing surface, and further again, the distance of any point on the exterior contour of embossed area and burnishing surface geometric center is 20.5% to 40% of a wafer polishing diameter.
Further, distance on the interior lateral profile line of plane area between any 2 is greater than 120% of wafer polishing diameter, be preferably, the arbitrarily some beeline to the plane area outboard wheel profile on the plane area nearside wheel profile greater than the wafer polishing diameter 120% and smaller or equal to 150% of wafer polishing diameter.
As the technical scheme of optimizing, described embossed area becomes circular concentric to distribute with burnishing surface, and plane area is that burnishing surface is removed the annular region that embossed area forms.Wherein, the diameter of burnishing surface is D
1, and 457.2mm≤D
1≤ 711.2mm; The diameter of embossed area is D
2, and 76.2mm≤D
2≤ 152.4mm.
Wherein, the number of the groove that embossed area has, hole or their combinations is greater than two, and groove, hole or their the arranging of embossed area that be combined in are even or uneven.
Wherein, the groove of embossed area is independent trellis, ring-type, XY grid-shaped, width of cloth bar shaped, helical form, the combination of perhaps wherein any two kinds or two or more shapes, and described groove has width, the degree of depth and the length of requirement.
Wherein, the shape of cross section in embossed area hole is independent circle, ellipse, polygon, the combination of perhaps wherein any two kinds or two or more shapes, and described hole has the degree of depth and the sectional area of requirement.
Optimized, embossed area has some endless grooves that are arranged into the concentric circles annular, and wherein, the spacing between the endless groove is 0.1mm to 2mm.
The width of endless groove is 0.15mm～0.5mm, and the degree of depth of groove is 0.25mm～0.5mm, and the minimum length between adjacent slot is 0.1mm～10mm.
Optimized, embossed area has some circular ports that are arranged into the concentric circles annular, and the diameter in hole is 5mm～12mm, and the spacing between the donut is 0.1mm to 2mm.
Optimized, embossed area has some circular port and some circular ports that are arranged into the concentric circles annular that are arranged into the concentric circles annular, and the spacing between the donut is 0.1mm to 2mm.
Further, described polishing is paid somebody's debt and expected repayment later and is had the lining that is arranged on non-burnishing surface.
Compared with prior art, the present invention has the following advantages:
1, the burnishing surface of polishing pad provided by the invention has plane area and embossed area, and plane area is the flat surfaces of roughness less than 20um, is used for wafer polishing, and embossed area has groove, hole or their combination, is used for after the polishing wafer being extracted from burnishing surface.When carrying out chemically mechanical polishing, use the plane area of polishing pad, overcome the not high defective of wafer surface flatness that the polishing pad that has groove in the prior art brings, can make the wafer after the chemically mechanical polishing that higher surface smoothness is arranged, can satisfy the optics that is used for image transmission and to crystal column surface quality requirement high product, after polishing finishes, wafer is moved to the embossed area of polishing pad, can be easy to wafer is extracted from pad interface.
2, any point of the embossed area outer ledge of polishing pad provided by the present invention apart from the distance of burnishing surface geometric center at 38.1mm to 76.2mm, not only can effectively guarantee to carry out the area of the plane area of chemically mechanical polishing, can not make wafer in polishing process, enter embossed area, and, after polishing finishes, also can guarantee wafer after moving to embossed area, be easy to extract from polishing pad.
3, the burnishing surface of embossed area, plane area and polishing pad is arranged to the shape of donut, and the groove of embossed area, hole and their combination also be arranged to the shape of donut, can guarantee that wafer can not enter embossed area in polishing process.
4, the diameter in the hole contained of embossed area is arranged on 5mm～12mm, can make embossed area that enough spaces are arranged, and wafer is extracted from polishing pad after moving to embossed area easily.
5, adopt polishing pad of the present invention and finishing method, improved the yields of chemically mechanical polishing silicon wafer process.Use the crystal column surface rough and uneven in surface aberration that causes in existing polishing pad and cmp method polishing back can cause 40% to 80% yields to descend, adopt the polishing of polishing pad of the present invention and finishing method after, yields has improved 40% to 80%.
6, the wafer surface roughness that adopts the crystal column surface after polishing pad of the present invention and finishing method polish to handle with respect to chemical etching method is lower, is lower than 10 nanometers, so crystal column surface has higher surface reflectivity and better photoelectric characteristic.
Description of drawings
Fig. 1 is that existing burnishing surface is the structural representation of polishing pad of the pyramid shape of flat top surface;
Fig. 2 is that existing burnishing surface is the structural representation of the polishing pad of concentric circles annular recess;
Fig. 3 is the microscopic appearance figure on soft polishing pad surface in the prior art;
Fig. 4 is to use the polishing pad that has recess to carry out the shape appearance figure of wafer surface after chemico-mechanical polishing;
Fig. 5 is to use the polishing pad that has recess to carry out the stereoscopic-state schematic diagram of wafer surface after chemico-mechanical polishing;
Fig. 6 is to use the polishing pad that has recess to carry out the shape appearance figure of wafer surface after chemico-mechanical polishing;
Fig. 7 to Fig. 9 is the structural representation of burnishing surface in the preferred embodiment provided by the invention;
Figure 10 is the shape appearance figure that cmp method provided by the invention polishes the back crystal column surface;
Figure 11 is that the wafer defect incidence compares after the used polishing pad chemically mechanical polishing of prior art and the present invention.
The specific embodiment
Below in conjunction with accompanying drawing and specific embodiment the specific embodiment of the present invention is done a detailed description.
The polishing pad that uses in the chemical mechanical polishing manufacture procedure all is the polishing pad that burnishing surface has groove at present.After the polishing pad that uses burnishing surface to have groove polished wafer, the flatness of crystal column surface can not be applied in the device that is used for the image transmission.In order to make crystal column surface obtain better flatness, the present invention studies the reason that wafer surface after chemico-mechanical polishing produces recess.Have the polishing pad of recess by the electron microscope observation burnishing surface, the microstructure of finding the burnishing surface recess can significantly be found out recess all as shown in Figure 3 from figure.
To have after the polishing pad of burnishing surface carries out chemically mechanical polishing to wafer as shown in Figure 2, shine by polarised light (polarized light), the surface topography of discovery wafer as shown in Figure 4, be concentric ring-shaped, and recess has also appearred in the donut on the wafer, conforms to the shape of polishing pad recess.Fig. 4 is the surface topography of the wafer of employing polarised light (polarized light) irradiation that photographs with digital camera.
Fig. 5 is the chemically mechanical polishing three-dimensional shape appearance figure of the donut of crystal column surface afterwards, can see the donut of crystal column surface and the recess on the donut more intuitively from figure.
The present invention analyzes and researches to the size and the polishing back crystal column surface recess width of the polishing pad groove of various models commonly used in the semiconductor manufacturing, the result is as shown in table 1, and the width of donut is identical on the width of polishing back each donut of crystal column surface and the employed polishing pad burnishing surface.The width of wherein said each ring of polishing pad is the summation of groove part and non-groove part width, and the width of each donut of crystal column surface also is the summation of groove part and non-groove part width.
The width of different each ring of polishing pad of table 1 compares with the width of polishing back each ring of crystal column surface
| The polishing pad model | The width of each ring of polishing pad | The width of each ring of crystal column surface |
| IC1010 polishing pad (LAM polishing machine platform) | 1.4mm | 1.4mm |
| IC1010 polishing pad (MIRRA MESA polishing machine platform) | 3mm | 3mm |
| Politex reg polishing pad (MIRRA MESA polishing machine platform) | 2.5mm | 2.5mm |
IC1010 polishing pad in the table 1 (LAM polishing machine platform) is meant that the polishing machine platform that uses the U.S. general woods Science and Technology Ltd. (LAM) to produce assembles the IC1010 hard polishing pad that U.S. Rhom and Hass (Rohmhass) produces.
IC1010 polishing pad in the table 1 (MIRRA MESA polishing machine platform) is meant the IC1010 hard polishing pad of MIRRA MESA polishing machine platform assembling U.S. Rhom and Hass (Rohmhass) production that company of Applied Materials (AMAT) produces.
Politex reg polishing pad in the table 1 (MIRRA MESA polishing machine platform) is meant the Politex reg soft polishing pad of MIRRA MESA polishing machine platform assembling U.S. Rhom and Hass (Rohmhass) production that company of Applied Materials (AMAT) produces.
Discover that further the recess shapes and the width of the recess that wafer surface after chemico-mechanical polishing produces and the burnishing surface of employed polishing pad are all identical, and the difference in height of recess and crystal column surface peak is 50 to 200
, as shown in Figure 6.
In view of above-mentioned research, in order to obtain more smooth crystal column surface, the invention provides a kind of polishing pad, have plane area and embossed area on the burnishing surface of polishing pad, described plane area is the flat surfaces of roughness less than 20um, be used for wafer polishing, described embossed area has groove, hole or their combination, is used for after the polishing wafer being pulled up from burnishing surface.
Further, described plane area surrounds embossed area, and the geometric center of embossed area overlaps with the geometric center of burnishing surface, further again, the distance of any point on the exterior contour of embossed area and burnishing surface geometric center is 20.5% to 40% of a wafer polishing diameter, because plane area is used for wafer polishing, therefore, the area of plane area should guarantee can not make when wafer polishing wafer to enter embossed area at least.
Further, embossed area becomes circular concentric to distribute with burnishing surface, plane area is that embossed area is removed the circle ring area that burnishing surface constitutes, and on the embossed area lateral profile any point with the distance of burnishing surface geometric center be 20.5% to 40% of wafer polishing diameter, the area of plane area should guarantee can not make when wafer polishing wafer to enter embossed area at least, therefore, distance on the plane area inside and outside contour line between any 2 is greater than 120% of wafer polishing diameter, be preferably greater than the wafer polishing diameter 120% and smaller or equal to 150% of wafer polishing diameter.
As the technical scheme that is more preferably, the diameter that the present invention sets burnishing surface is D
1, the diameter of embossed area is D
2, 76.2mm≤D then
2≤ 152.4mm, and 457.2mm≤D
1≤ 711.2mm.The plane area of polishing pad of the present invention has smooth surface, and the roughness of described flat surfaces is less than 20um, when carrying out chemically mechanical polishing, mainly rely on plane area that wafer is polished, can obtain the flatness height, can be used for the crystal column surface of optics.
When the polishing pad that use has a smooth burnishing surface carries out chemically mechanical polishing, because the surface that burnishing surface contacts with wafer is all very smooth, therefore, contact-making surface is in conjunction with tight, after chemically mechanical polishing is finished, wafer can't be extracted from polishing pad at plane area, in order to make wafer be relatively easy to extract from pad interface, after polishing finishes, the part of wafer can be rotated to the embossed area of polishing pad, because embossed area has groove, hole or their combination can make between wafer and the surface that polishing pad contacts fully and insert air, reduce the pressure differential of wafer upper and lower surface, thereby make wafer be relatively easy to extract from pad interface.
Smooth burnishing surface of the present invention is meant that burnishing surface does not have the structure of groove, hole and their combination and other any surface irregularity.
Embossed area of the present invention has groove, hole or their combination.The number of the groove that embossed area contains, hole or their combination can be set as required, and the number of preferred groove, hole or their combination is more than two.
Groove, hole or their the arranging of embossed area that be combined in do not have too much requirement, can be arranging of rule, can be irregular arranging yet.Comparative optimization be that groove, hole or their arranging of whole embossed area that be combined in are that for example a plurality of grooves are arranged into regular circular at embossed area, ellipse uniformly.For example a plurality of again holes arbitrarily evenly distribute at embossed area, for example arrange to be the quadrangle of rule, pentagon, hexagon etc., and perhaps arranging is the ellipse of rule, shapes such as annular.For example a plurality of again grooves and a plurality of hole evenly distribute at embossed area etc.
Owing to make wafer be easy to pull up after the effect of embossed area of the present invention is to polish and finishes from the surface of polishing pad, and can the flatness of crystal column surface not impacted, therefore, the embossed area of polishing pad provided by the invention is as long as exist the recess area that can enter air, reducing the pressure differential of wafer upper and lower surface, and make the roughness on protuberance surface reach the degree identical to get final product with the surface roughness of the polishing pad of prior art.
The groove that above-mentioned embossed area contains can be the shape of selecting from shapes such as trellis, ring-type, XY grid-shaped, width of cloth bar shaped or helical form, the groove of embossed area can be independent trellis, ring-type, XY grid-shaped, width of cloth bar shaped or helical form, also can be the combination of any two kinds or three kinds shapes.The embossed area that is shaped as independent endless groove formation of comparative optimization of the present invention.
Under the situation of the groove that embossed area contains for annular, there is no particular restriction to its flat shape, for example can form circle, polygonal (triangle, quadrangle, pentagon), ellipse etc.Comparative optimization, a plurality of grooves that embossed area contains are configured to annular, and more preferably, a plurality of grooves are configured to the concentric circles annular.
Cross sectional shape on the well width direction that the present invention contains embossed area does not have special restriction yet, on the one hand, cross sectional shape both can have been made the shape that is formed by smooth side and bottom surface, wherein the width of the open side of groove can be identical with the width of the bottom side of groove, also can be different, bigger than bottom side as the open side width, perhaps bottom side width ratio open side is big, on the other hand, cross sectional shape also can be made U font and V font etc.
According to the present invention, the width of the groove that embossed area contains and the degree of depth can be set as required, and the width of a plurality of different groove that embossed area contains can be identical with the degree of depth, also can be inequality.
The width of groove preferably is in more than the 0.1mm among the present invention, more preferably 0.1mm～5mm, especially preferably 0.2mm～3mm, most preferably 0.15mm～0.5mm.The degree of depth of groove preferably is in more than the 0.1mm, more preferably 0.1mm～2.5mm, especially preferably 0.2mm～2.0mm, most preferably 0.25mm～0.5mm.In addition, the minimum length between adjacent slot preferably is in more than the 0.05mm, more preferably 0.05mm～100mm, especially preferably 0.1mm～10mm.
That is to say, in the present invention, embossed area at same burnishing surface, set embossed area and have number at plural groove, a plurality of grooves can arbitrarily be arranged at embossed area, also can evenly be arranged into the shape of rule, groove can be identical with distance between the groove, also can be different, the width of a plurality of different grooves can be identical with the degree of depth, also can be different.The cross sectional shape of each different groove on the well width direction can be identical, also can be different.
In preferred technical scheme of the present invention: embossed area has number at plural groove, groove be shaped as annular, a plurality of grooves also are scattered in the annular of rule at embossed area, each different groove is identical at well width direction upper base cross sectional shape, and it is identical with the width of trench bottom side at the width of channel opening side, groove is identical with width between the groove, and the width of each groove is also identical respectively with the degree of depth.The concrete numerical value of the width of groove and the degree of depth can be set in the number range that the present invention provides as required, does not do too much restriction at this.Adopt this optimized technical scheme can simplify the manufacture craft of polishing pad, reduce cost.
In a most preferred embodiment, as shown in Figure 7, use circular polishing pad, embossed area 11 is a border circular areas, and become concentric distribution with the burnishing surface of polishing pad, plane area 12 is removed the annular that embossed area 11 forms for burnishing surface, and the diameter of setting burnishing surface is D
1, D then
1Can set according to the size of the wafer of polissoir and polishing, in general, be set in 457.2mm to 711.2mm, more common setting value is 508mm, 609.6mm etc., and the diameter of setting embossed area 11 is D
2, 76.2mm≤D then
2≤ 152.4mm, the concrete in an embodiment value of setting is 76.2mm, 101.6mm, 127mm, 152.4mm etc.Embossed area is set the groove 13 that becomes the concentric circles annular to distribute more than two as required, and (two grooves that become the concentric circles annular to distribute that draw among the figure only are signal, actual number is to set according to different needs, the present invention does not wish this is done too much qualification), the cross sectional shape of groove 13 is an annular, and the diameter difference between the neighboring concentric annulus is identical, this diameter difference can be set according to the size of polishing pad and the area of plane domain and the area size of embossed area, more commonly between 0.1mm to 2mm.The width and the degree of depth of groove 13 are also set as required, and the present invention does not wish this is done too much qualification, and still, as a specific embodiment, it is 0.15mm to 0.5mm that the present invention sets its width, and the degree of depth is 0.25mm to 0.5mm.
The hole that above-mentioned embossed area contains can have various shape of cross section, the shape of cross section can be the different shape of rule, as circle, and ellipse, polygon shapes such as (triangle, quadrangle, pentagon, hexagons) can also be other various irregular figure.The hole of embossed area can be that independent circle, ellipse, polygon or other are irregularly shaped, also can the hole of described different shape in the combination of any two kinds or three kinds shapes.
A plurality of holes can be arranged in regular shape at embossed area, also can be irregular shapes.The present invention wishes to be preferably a plurality of holes and distributes comparatively uniformly at embossed area, be more preferably each different hole and be arranged in annular at embossed area, polygon, shapes such as spirality, be preferably a plurality of holes and be arranged in annular at embossed area, distance between each annular is set as required, can be identical, and also can be different.The most preferably a plurality of holes of the present invention are arranged in concentrically ringed shape at embossed area, distance between each concentric circles, semidiameter between two just adjacent concentric circles is identical, and the distance of forming between concentrically ringed each hole can be regulated as required.
Depth direction in the hole, the cross section in different depth hole can be identical, also can be different, for example: the three-dimensional shape in hole can be cylindrical, also can form taper shape and other three or the cylinder at four sides.Comparative optimization of the present invention be that the cross section of the different depth in hole is identical, more preferably form circular hole, the cross section in different depth hole big or small identical.
According to the present invention, the width in the hole that embossed area contains and the degree of depth can be set as required, and the width in a plurality of different hole that embossed area contains can be identical with the degree of depth, also can be inequality.
Wafer after the polishing is easier to be pulled up from polishing pad in order to make, and polishing fluid is entered cause waste in the hole, can plugging hole yet, and the diameter in single hole is set in 5mm～12mm, and is preferably at 6mm～10mm, preferred between 8mm～9mm.
In the present invention, contain at embossed area under the situation in a plurality of holes, we wish that each hole is evenly distributed in each zone of embossed area relatively, that is to say, when most of area of wafer rotates to the arbitrary region of embossed area, the embossed area that contacts with wafer all should be distributed with a plurality of holes, so that wafer can pull up from burnishing surface smoothly, and too much restriction is not done in the shape of arranging of embossed area in a plurality of holes.Be preferably, a plurality of holes are arranged in a plurality of annulus at embossed area, and the spacing of different annular shape can be regulated as required, and the spacing between the different annular can be identical, also can be different, and the degree of depth that forms each hole of annulus also is identical with width.
And the preferred technical scheme of the present invention is, a plurality of holes of embossed area are arranged in the concentric circles annular, and the diameter difference between adjacent two donuts is set at identical, and the width in each hole also is set at identical respectively with the degree of depth.
In an embodiment that is more preferably, use circular polishing pad, embossed area is a border circular areas, and become concentric distribution with the burnishing surface of polishing pad, plane area is that burnishing surface is removed the annular that embossed area forms, embossed area has the donut that is evenly arranged into by a plurality of holes, and embossed area becomes concentric distribution by the donut that the arrangement of a plurality of holes forms with plane area.
In a most preferred embodiment, as shown in Figure 8, use circular polishing pad, embossed area 21 is a border circular areas, and become concentric distribution with the burnishing surface of polishing pad, plane area 22 is removed the annular that embossed area 21 forms for burnishing surface, and the diameter of setting burnishing surface is D
1, D then
1Can set according to the size of the wafer of polissoir and polishing, in general, be set in 457.2mm to 711.2mm, more common setting value is 508mm, 609.6mm etc., and the diameter of setting embossed area 21 is D
2, 76.2mm≤D then
2≤ 152.4mm, the concrete in an embodiment value of setting is 76.2mm, 101.6mm, 127mm, 152.4mm etc.Embossed area contains several holes 23, arrange uniformly in hole 23, forms the annulus that distributes with one heart more than 2, and the spacing of the annulus of formation can be set as required, two annulus among the figure only are schematic statements, are not that the annulus that will be formed by hole 23 is limited to 2.Spacing between the different annular is to set according to the area size of the area of the size of polishing pad and plane domain and embossed area, more commonly between 0.1mm to 2mm.Distance between the Kong Yukong can be regulated as required, and present embodiment does not wish this is too much limited.The cross section in single hole is circular, and diameter is set in 5mm～12mm, and the degree of depth in hole is set as required.
With reference to Fig. 9, be another specific embodiment of the present invention, use circular polishing pad, embossed area 31 is a border circular areas, and becomes concentric distribution with the burnishing surface of polishing pad, and plane area 32 is removed the annular that embossed area 31 forms for burnishing surface, the diameter of setting burnishing surface is D1, then D1 can set according to the size of the wafer of polissoir and polishing, in general, is set at 457.2mm to 711.2mm, more common setting value is 508mm, 609.6mm etc., the diameter of setting embossed area 31 is D2, then 76.2mm≤D2≤152.4mm, the concrete in an embodiment value of setting is 76.2mm, 101.6mm, 127mm, 152.4mm etc.
With reference to Fig. 9, embossed area 31 is the groove 33 of annular and the circle that is arranged into by a plurality of holes 34 by cross sectional shape, the groove 33 of described annular and the round-formed concentric distribution that is arranged into by a plurality of holes 34, the number of the groove 33 of annular and the circle that is arranged into by a plurality of holes 34 can be set as required, do not limit to figure in number.Distance between the circle that the groove 33 of annular and a plurality of hole 34 are arranged into can be set as required, does not do too much qualification at this.The width and the degree of depth of groove 33 are also set as required, and the present invention does not wish this is done too much qualification, and still, as a specific embodiment, it is 0.15mm to 0.5mm that the present invention sets its width, and the degree of depth is 0.25mm to 0.5mm.The cross sectional shape in hole 34 is an annular, and the diameter in single hole is set in 5mm～12mm, and the degree of depth in hole is set as required, and the distance between the Kong Yukong also can be regulated as required, and present embodiment does not wish this is too much limited.
Polishing pad of the present invention can be that hard polishing pad also can be a soft polishing pad, because plane area is mainly used in chemically mechanical polishing, the dispersibility of polishing fluid is better on the polishing pad when making chemically mechanical polishing, and the present invention preferably adopts soft polishing pad.
The present invention does not have special requirement to the material of the polishing pad that provides yet, is suitable for the polishing pads all in the prior art and the material of burnishing surface.Comparative optimization be to select for use the porous polyurethane of foaming type to make burnishing surface.
Described polishing pad can be a multilayer polishing mattress, that is to say, polishing pad can also have the lining that is arranged on non-burnishing surface.The lining material of multilayer polishing mattress and structure are identical in the lining material of non-burnishing surface and design feature and the prior art, belong to prior art, do not do detailed description at this.
When the embossed area of burnishing surface contains when porose, can from the hole, not spill in order to make polishing fluid, must guarantee that Kong Buhui penetrates whole polishing pad, described polishing pad must be arranged to multilayer polishing mattress, at the non-burnishing surface of polishing pad lining is set.
When adopting above-mentioned polishing pad to polish, because burnishing surface is a flat structures, in chemically mechanical polishing, can not produce the crystal column surface out-of-flatness that prior art is caused by the out-of-flatness of recess, therefore can obtain the crystal column surface of high-flatness, after the polishing, the part of wafer can be rotated to the embossed area of polishing pad, wafer can be easy to extract from burnishing surface, avoided simple when using the polishing pad that the surface do not contain groove wafer be difficult to the defective of extracting from burnishing surface.
The invention allows for a kind of new cmp method, the key of polishing is to use polishing pad of the present invention to polish, whole glossing is finished in two steps, at first, the plane area of wafer at burnishing surface polished, then, polishing pad is moved to the embossed area of burnishing surface, wafer is extracted from burnishing surface.
Above-mentioned cmp method, when polishing pad was moved to the embossed area of burnishing surface, any point should be 12.7mm to 25.4mm apart from the minimum range at polishing pad edge on the wafer, scratched crystal column surface to prevent polishing pad rough edge profile.
Adopt after polishing pad of the present invention and cmp method polish, the surface microstructure of wafer after the polishing, has been eliminated the donut that uses the polishing pad that has recess to cause at crystal column surface as shown in figure 10, crystal column surface is evenly smooth, and roughness is lower than 10nm.Above-mentioned wafer surface flatness satisfies the application requirements of the optics that is used for the image transmission.
With reference to the accompanying drawings shown in 11, for adopting defective incidence that polishing pad provided by the invention defective incidence of carrying out wafer after the chemically mechanical polishing and the polishing pad that adopts the prior art burnishing surface to have groove polish the back wafer relatively, as can be seen from the figure, the defective incidence of prior art is 30% to 40%, after adopting polishing pad provided by the invention to carry out chemically mechanical polishing, can make the defective incidence of wafer be reduced to 0.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (20)
1, a kind of polishing pad is characterized in that, has plane area and embossed area on the burnishing surface of described polishing pad, described plane area is the flat surfaces of roughness less than 20um, be used for wafer polishing, described embossed area has groove, hole or their combination, is used for after the polishing wafer being pulled up from burnishing surface.
2, polishing pad according to claim 1 is characterized in that, described plane area surrounds embossed area, and the geometric center of embossed area overlaps with the geometric center of burnishing surface.
3, polishing pad according to claim 2 is characterized in that, the distance of any point on the exterior contour of embossed area and burnishing surface geometric center is 20.5% to 40% of a wafer polishing diameter.
4, polishing pad according to claim 1 is characterized in that, the distance on the interior lateral profile line of plane area between any 2 is greater than 120% of wafer polishing diameter.
5, polishing pad according to claim 4 is characterized in that, the arbitrarily some beeline to the plane area outboard wheel profile on the plane area nearside wheel profile be greater than the wafer polishing diameter 120% and smaller or equal to 150% of wafer polishing diameter.
6, polishing pad according to claim 1 is characterized in that, described embossed area becomes circular concentric to distribute with burnishing surface, and plane area is that burnishing surface is removed the annular region that embossed area forms.
7, polishing pad according to claim 6 is characterized in that, the diameter of burnishing surface is D
1, and 457.2mm≤D
1≤ 711.2mm; The diameter of embossed area is D
2, and 76.2mm≤D
2≤ 152.4mm.
8, polishing pad according to claim 1 is characterized in that, the number of the groove that embossed area has, hole or their combinations is greater than two.
According to each described polishing pad in the claim 1 to 8, it is characterized in that 9, the groove of embossed area is independent trellis, ring-type, XY grid-shaped, width of cloth bar shaped, helical form, the combination of perhaps wherein any two kinds or two or more shapes.
According to each described polishing pad in the claim 1 to 8, it is characterized in that 10, the shape of cross section in embossed area hole is independent circle, ellipse, polygon, the combination of perhaps wherein any two kinds or two or more shapes.
According to each described polishing pad in the claim 1 to 8, it is characterized in that 11, embossed area has some endless grooves that are arranged into the concentric circles annular.
12, polishing pad according to claim 11 is characterized in that, the spacing between the endless groove is 0.1mm to 2mm.
13, polishing pad according to claim 11 is characterized in that, the width of groove is 0.15mm～0.5mm, and the degree of depth of groove is 0.25mm～0.5mm, and the minimum length between adjacent slot is 0.1mm～10mm.
According to each described polishing pad in the claim 1 to 8, it is characterized in that 14, embossed area has some circular ports that are arranged into the concentric circles annular.
15, polishing pad according to claim 14 is characterized in that, the diameter in hole is 5mm～12mm.
16, polishing pad according to claim 14 is characterized in that, the spacing between the donut is 0.1mm to 2mm.
According to each described polishing pad in the claim 1 to 8, it is characterized in that 17, embossed area has some circular port and some endless grooves that are arranged into the concentric circles annular that are arranged into the concentric circles annular.
18, polishing pad according to claim 17 is characterized in that, the spacing between the donut is 0.1mm to 2mm.
According to each described polishing pad in the claim 1 to 8, it is characterized in that 19, described polishing is paid somebody's debt and expected repayment later has the lining that is arranged on non-burnishing surface.
20, a kind of cmp method, it is characterized in that, use any described polishing pad in the claim 1 to 19, at first adopt the plane area of described polishing pad to carry out the chemically mechanical polishing wafer, again wafer polishing is moved to embossed area, wafer is extracted.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101188348A CN100537149C (en) | 2006-11-28 | 2006-11-28 | Polishing pad and chemico-mechanical polishing method |
| US11/941,603 US20080125019A1 (en) | 2006-11-28 | 2007-11-16 | Polishing Pad and a Chemical-Mechanical Polishing Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101188348A CN100537149C (en) | 2006-11-28 | 2006-11-28 | Polishing pad and chemico-mechanical polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101190508A CN101190508A (en) | 2008-06-04 |
| CN100537149C true CN100537149C (en) | 2009-09-09 |
Family
ID=39464265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101188348A Expired - Fee Related CN100537149C (en) | 2006-11-28 | 2006-11-28 | Polishing pad and chemico-mechanical polishing method |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20080125019A1 (en) |
| CN (1) | CN100537149C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102528655B (en) * | 2010-12-16 | 2015-04-01 | 三芳化学工业股份有限公司 | Adsorption spacer |
| CN103366071B (en) * | 2013-08-01 | 2016-04-06 | 中国科学院微电子研究所 | A kind of chemically mechanical polishing analogy method |
| JP7113626B2 (en) * | 2018-01-12 | 2022-08-05 | ニッタ・デュポン株式会社 | polishing pad |
| TWI771668B (en) | 2019-04-18 | 2022-07-21 | 美商應用材料股份有限公司 | Temperature-based in-situ edge assymetry correction during cmp |
| TWI826280B (en) * | 2019-11-22 | 2023-12-11 | 美商應用材料股份有限公司 | Wafer edge asymmetry correction using groove in polishing pad |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2914166B2 (en) * | 1994-03-16 | 1999-06-28 | 日本電気株式会社 | Polishing cloth surface treatment method and polishing apparatus |
| US5658190A (en) * | 1995-12-15 | 1997-08-19 | Micron Technology, Inc. | Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers |
| US5899799A (en) * | 1996-01-19 | 1999-05-04 | Micron Display Technology, Inc. | Method and system to increase delivery of slurry to the surface of large substrates during polishing operations |
| US5899801A (en) * | 1996-10-31 | 1999-05-04 | Applied Materials, Inc. | Method and apparatus for removing a substrate from a polishing pad in a chemical mechanical polishing system |
| US6132294A (en) * | 1998-09-28 | 2000-10-17 | Siemens Aktiengesellschaft | Method of enhancing semiconductor wafer release |
| US6287174B1 (en) * | 1999-02-05 | 2001-09-11 | Rodel Holdings Inc. | Polishing pad and method of use thereof |
| US6558228B1 (en) * | 1999-11-15 | 2003-05-06 | Taiwan Semiconductor Manufacturing Company | Method of unloading substrates in chemical-mechanical polishing apparatus |
| US7081042B2 (en) * | 2004-07-22 | 2006-07-25 | Applied Materials | Substrate removal from polishing tool |
-
2006
- 2006-11-28 CN CNB2006101188348A patent/CN100537149C/en not_active Expired - Fee Related
-
2007
- 2007-11-16 US US11/941,603 patent/US20080125019A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20080125019A1 (en) | 2008-05-29 |
| CN101190508A (en) | 2008-06-04 |
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