CN100535761C - Lithography device sensor and detection method - Google Patents
Lithography device sensor and detection method Download PDFInfo
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- CN100535761C CN100535761C CNB2007100469550A CN200710046955A CN100535761C CN 100535761 C CN100535761 C CN 100535761C CN B2007100469550 A CNB2007100469550 A CN B2007100469550A CN 200710046955 A CN200710046955 A CN 200710046955A CN 100535761 C CN100535761 C CN 100535761C
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Abstract
Said sensor is located at position of the work-piece height in the photo-etching device. It comprises a transmission plate for detecting patterns, an optically-processing component, a quantum switchover film, a micro optically-processing component, a optic filter film, a radiation detector, a Bohr component, and a detection signal preposition conditioning processor. The detection method comprises: during the process in which the radiation space image and the space position of the sensor generate a relative motion, the sensor uses its pattern on the detection pattern transmission plate to modulate the space image; the optically-processing component projects the modulated space image on the quanta switchover film; after the quanta switchover, a new light radiation is formed; after processed by the micro optically-processing component, the newly-formed light radiation irradiates the radiation detector to form the electric signals which are obtained by the processor; after detection, the variation of the polarization state of the space image is obtained.
Description
Technical field
The present invention relates to the sensing technology of lithographic equipment, the method that relates in particular to a kind of sensor of lithographic equipment and use this sensor that the spatial image of mask registration figure in the lithographic equipment is surveyed.
Background technology
In commercial plant, since the needs of high precision and high production capacity, the control system of distributing a large amount of high-speed real-time sensor measurements, signal sampling, data acquisition, exchanges data and communications etc.The control that these systems need us to adopt that multiple mode realizes that sensor detection, signal sampling control, data acquisition control, exchanges data control are communicated by letter with data transmission etc.Have the device of this demand for control to comprise: integrated circuit is made lithographic equipment, panel display board lithographic equipment, MEMS/MOEMS lithographic equipment, advanced encapsulation lithographic equipment, printed circuit board (PCB) lithographic equipment, printed circuit board (PCB) processing unit (plant) and printing circuit board element mounting device etc.
Lithographic equipment is a kind of required pattern to be applied to device on the workpiece.Normally required pattern is applied to the device on the target part on the workpiece.Lithographic equipment can be used for for example manufacturing of integrated circuit (IC).In this case, mask plate can be used for producing the circuit pattern that forms on individual course of IC, and this pattern can be delivered to the target part of workpiece (as silicon wafer) by projection system, for example comprises a part, on one or more tube core.Normally, one deck radiation-sensitive materials (resist) that provides on the workpiece comes up to duplicate in proportion required image by being provided.Known lithographic equipment also comprises scanner, and the utilization radiation laser beam scans described pattern along given direction (" scanning " direction), and simultaneously along coming each target part of irradiation with the parallel or antiparallel direction synchronous scanning of this direction workpiece.Can also be by pattern being stamped on the workpiece and pattern is generated on the workpiece by patterning device.
A plurality of sensors that utilization is positioned at the substrate level place evaluate and optimize imaging performance.These sensors can comprise spatial image sensor (SIS, Spatial Image Sensor), the energy sensor (ES that is used for the exposing radiation dosage measurement, Energy Sensor) and the integral micro-lens interference detection device (IMID, Integrating Microbeam Interference Detector) that measure to use.
SIS is a kind of sensor in measurement space picture position, substrate level place, and this spatial image forms in mask height place projection indicia patterns.The projects images that is positioned at the substrate level place can be a line image, and the wavelength of its live width and exposing radiation is suitable.Measure these mask patterns when SIS utilizes projective patterns, this projective patterns has the photoelectric cell that is positioned at below it.Can use sensing data to measure on the six-freedom degree mask with respect to the position (three translation freedoms and three rotary freedoms) of base station.In addition, can measure the enlargement ratio of the mask that is throwed.Because sensor preferably can be set with all irradiations the measured pattern position: δ, lens numerical aperture NA, all masks, for example influence of binary mask (binary mask), phase shifting mask (PSM) etc., therefore little live width is through optimizing.Can also use SIS to measure the optical property of projection system.The multiple character of projection system is measured in the combination that can use different irradiations to be set in different projects images, as pupil shape, spherical aberration, coma, astigmatism and the curvature of field etc.
IMID is a kind of interference wavefront measurement system that can carry out static measurement to the lens aberration that reaches high-order.IMID can realize by the integral measuring system that is used for system initialization and calibration.
In the former said apparatus, what use when the lithography alignment system is DUV (deep ultraviolet) light source, and then this radiation source is that the quasi-molecule laser source of 248nm, 193nm is main with the wavelength, also can use the quasi-molecule laser source of 157nm, 126nm.In addition, use the alignment system of EUV (extreme ultraviolet) impulse radiation source and X ray impulse radiation source in addition; Sensor described in patented claim CN200610019816.4, CN200410100577.6, CN200410074853.6, CN200410047698.9 can not provide the required conversion of radiation wavelength on a large scale, and the radiation wave spectrum broad of being changed, the linearity of its conversion are also good inadequately; In addition, when being converted radiation and being impulse radiation, the whole scope of the width-adjustable of the pulses of radiation that are converted to is narrower, and the twilight sunset of the pulses of radiation of changing is longer, be unfavorable for the raising of impulse radiation repetition frequency, influenced the raising of lithographic equipment performance and efficient.
Summary of the invention
Technical matters solved by the invention is to provide a kind of sensor of lithographic equipment, to realize the conversion of radiation wavelength on a large scale, improves the linearity of emittance conversion and the detection accuracy of spatial image, thereby improves the performance and the efficient of lithographic equipment.
For solving the problems of the technologies described above, the invention provides a kind of sensor of lithographic equipment, place the workpiece height place on the lithographic equipment work stage datum plate, this lithographic equipment has optical projection system, be used for patterned radiation laser beam is projected workpiece target part to form the radiation space image, described sensor comprises the detection pattern transmittance plate that is arranged in order along the light ray propagation direction, first optical element, the quantum switching film, second optical element, be used for the radiation detector that the coupling quantum switching film discharges optical radiation, and the preposition conditioning processor of detectable signal; Described detection pattern transmittance plate, its front is distributed with several detection pattern, is used for the chopped radiation spatial image, and this radiation space image penetrates from the back side after ovennodulation from the positive incident of described detection pattern; Described first optical element is lens element or prism, described second optical element comprises micro optical lens and optical filtering film, described quantum switching film is along the light ray propagation direction, is arranged on before the micro optical lens or between micro optical lens and the optical filtering film; Described sensor also comprises the bohr element, and it is distributed in the marginal portion between adjacent elements; In the process that generation relative position in the locus of radiation space image and sensor moves, the sensor at workpiece height place is modulated spatial image with the pattern on its detection pattern transmittance plate, the spatial image that first optical element will be modulated projects on the quantum switching film, after the quantum conversion, form new optical radiation, detection obtains the variation of the polarization state of above-mentioned spatial image, processing through micro optical lens, see through the optical filtering film, shine on the radiation detector, form electric signal, obtain the characteristic information of the radiation space image that can transmit and handle by the preposition conditioning processor of detectable signal.
Described first optical element can be selected a kind of in protruding spherical lens, projection face lens, the convex surface triangular prism for use, and described first optical element is assemblied in the back side of detection pattern transmittance plate, and is perhaps integrally formed with the detection pattern transmittance plate.
Another program of the present invention provides a kind of sensor of lithographic equipment, place the workpiece height place on the lithographic equipment work stage datum plate, this lithographic equipment has optical projection system, be used for patterned radiation laser beam is projected workpiece target part to form the radiation space image, described sensor comprises the detection pattern transmittance plate that is arranged in order along the light ray propagation direction, optical elements sets, quantum switching film, radiation detector, and the preposition conditioning processor of detectable signal; Described detection pattern transmittance plate, its front is distributed with several detection pattern, is used for the chopped radiation spatial image, and this radiation space image penetrates from the back side after ovennodulation from the positive incident of described detection pattern; Described quantum switching film is grown on the incident test surface of radiation detector; Described sensor also comprises the bohr element, and it is distributed in the marginal portion between adjacent elements; In the process that generation relative position in the locus of radiation space image and sensor moves, the sensor at workpiece height place is modulated spatial image with the pattern on its detection pattern transmittance plate, this spatial image is through the modulation and the processing of optical elements sets, project on the quantum switching film, after the quantum conversion, form new optical radiation, shine on the radiation detector, form electric signal, by the preposition conditioning processor of detectable signal, detection obtains the variation of the polarization state of above-mentioned spatial image, the characteristic information of the radiation space image that acquisition can be transmitted and handle.
Described optical elements sets can be selected a kind of in the combination of combination, Baltimore groove transmittance plate and transparent post of combination, concave surface globe lens and transparent post of concave surface post lens and transparent post for use, this transparent post is arranged on the back side of concave surface post lens or concave surface globe lens or Baltimore groove transmittance plate at a certain distance, and described concave surface post lens or concave surface globe lens or Baltimore groove transmittance plate are assemblied in the back side of detection pattern transmittance plate, and be perhaps integrally formed with the detection pattern transmittance plate.
Described optical elements sets can be selected a kind of in convex surface post lens and lenticular combination, convex surface globe lens and lenticular combination, convex slot transmittance plate and the lenticular combination for use, this lenticule is arranged on the back side of convex surface post lens or convex surface globe lens or convex slot transmittance plate at a certain distance, and described convex surface post lens or convex surface globe lens or convex slot transmittance plate are assemblied in the back side of detection pattern transmittance plate, and be perhaps integrally formed with the detection pattern transmittance plate.
Pattern on the described detection pattern transmittance plate has the modulating characteristic that is easy to be detected, and comprises one or more characteristics and combination thereof in unimodal value characteristic or multi-peak characteristic, valley characteristic, local edge, image identification characteristic, the window features.
Described quantum switching film be individual layer or multilayer, be distributed with quantum dot or quantum wiregrating or quantum well on every layer of quantum switching film, described quantum switching film is grown on the transparency carrier or is grown on the incident test surface of radiation detector, and the thickness range of single thin film is 20 nanometers～200 micron.
Described quantum dot, quantum wiregrating or the employed transition material of quantum well are the potpourri that the compound with quantum conversion effet that is made of III family in the periodic table of elements and V family and they form, for example gallium arsenide, Aluminum gallium arsenide, indium phosphide, indium phosphide aluminium, gallium nitride, aluminum gallium nitride, gallium phosphide, gallium phosphide aluminium, nitrogen gallium phosphide, nitrogen InGaP or nitrogen gallium phosphide aluminium and composition thereof.
The radiation detector that the coupling quantum switching film discharges optical radiation is a kind of in photodiode, cmos sensor array, the ccd array feature identification device.
The present invention makes it compared with prior art owing to adopted above-mentioned technical scheme, has following advantage and good effect:
1. the present invention realizes the conversion of required radiation wavelength on a large scale by used quantum film conversion regime in the sensor of lithographic equipment;
2. the radiated wave spectral limit that provides sensor to be converted to is narrower, improved the capture ability of the detection accuracy of the linearity of emittance conversion and spatial image;
3. adopt quantum film conversion regime, when being converted radiation and being impulse radiation, the width-adjustable of the pulses of radiation that are converted to is put in order wider range, and the twilight sunset of the pulses of radiation of changing is shorter, help the raising of impulse radiation repetition frequency, thereby improved lithographic equipment performance and efficient.
Description of drawings
To the description of specific embodiments of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:
Fig. 1 is the structural representation of the lithographic equipment of application sensor of the present invention.
Fig. 2 is the sensor construction synoptic diagram of first embodiment of the invention.
Fig. 3 a and Fig. 3 b are the sensor construction synoptic diagram of second embodiment of the invention.
Embodiment
Fig. 1 is a structural representation of using the lithographic equipment alignment system of sensor of the present invention, 4 is mask among the figure, has mask graph (comprising exposure mask pattern and mask registration figure 5) on it, 9 is by the photoetching workpiece, mask graph illumination window 2 and control panel 3 thereof are used to form window radiation 1 are transmitted on the mask registration figure 5, to form the transmission picture; Optical projection system 8 is used for this transmission picture projection is formed aerial image, and surveys this aerial image with work stage alignment mark 11; Radiation space imageing sensor 12 is used to detect the radiation information after aerial image passes through 11 transmissions of work stage alignment mark; Mask platform position sensor 7 and work stage position sensor 13 are surveyed the mask platform 6 in the alignment scanning process and the locus of work stage 10 respectively.
Be described in further detail below in conjunction with the sensor and the detection method of accompanying drawing to lithographic equipment of the present invention, need to prove, in the sensor construction shown in Fig. 2, Fig. 3 a and Fig. 3 b, what the some shadow region was represented is air.
As shown in Figure 2, place the radiation space image-position sensor at workpiece height place on the work stage datum plate to comprise the detection pattern transmittance plate of arranging along the light ray propagation direction 22 in the lithographic equipment, first optical element 23, quantum switching film 24, the second optical element 25a, 25b are used for radiation detector 26 and the preposition conditioning processor 27 of detectable signal that coupling quantum switching film 24 discharges optical radiation, in addition, also comprise bohr element 28, it is distributed in the marginal portion between adjacent elements.
The front of detection pattern transmittance plate 22 is distributed with the detection pattern 21 of chopped radiation spatial image, and this radiation space image penetrates from the back side after ovennodulation from detection pattern 21 positive incidents.Pattern 21 on the described detection pattern transmittance plate 22 has the modulating characteristic that is easy to be detected, these characteristics comprise: unimodal value characteristic or multi-peak characteristic, valley characteristic, local edge, image identification characteristic, window features etc., handle the combination that can access one or several and they in these characteristics through serial detectable signal.
Detection pattern transmittance plate 22 back are first optical elements 23, it is made of lens element or prism, for example can adopt a kind of in protruding spherical lens, projection face lens, the convex surface triangular prism mirror, this element 23 can be assembled together with the back side of detection pattern transmittance plate 22 or be connected as a single entity.
Be positioned at after first optical element 23 is quantum switching film 24, it can be an individual layer, it also can be multilayer, every layer of quantum switching film distributing a large amount of quantum dots or quantum wiregrating or quantum well, these quantum thin layers are grown on the transparency carrier (not shown), and the thickness of single thin film is in 20 nanometers～200 micrometer ranges.Described quantum dot, quantum wiregrating and the employed transition material of quantum well comprise: the potpourri that the compound with quantum conversion effet that is made of III family in the periodic table of elements and V family and they form, typical as: gallium arsenide, Aluminum gallium arsenide, indium phosphide, indium phosphide aluminium, gallium nitride, aluminum gallium nitride, gallium phosphide, gallium phosphide aluminium, nitrogen gallium phosphide, nitrogen InGaP and nitrogen gallium phosphide aluminium.
The micro optical element 25a that distributing in the transparency carrier back of supporting quantum switching film 24 is optical filtering film 25b after certain distance, and both form second optical element.Filter the radiation irradiation obtain to radiation detector 26 by optical filtering film 25b, formed electric signal is outputed to the preposition conditioning processor 27 of detectable signal, the characteristic information of the radiation space image that acquisition can be transmitted and handle through connecting line 29.
In other embodiments of the invention, the position of quantum switching film 24 and micro optical element 25a also can exchange.
As depicted in figs. 1 and 2, sensor detection method of the present invention is as follows: in the process that generation relative position in the locus of radiation space image and sensor 12 moves, pattern 21 modulation spatial images on its detection pattern plate 22 of sensor 12 usefulness that workpiece 9 is highly located, the spatial image that first optical element 23 will be modulated projects on the quantum switching film 24, after the quantum conversion, form new optical radiation, detection obtains the variation of the polarization state of above-mentioned aerial image, processing through optical element 25a, see through optical filtering film 25b, shine on the radiation detector 26, through connecting line 29 electric signal that forms is outputed to the preposition conditioning processor 27 of detectable signal, the characteristic information of the radiation space image that acquisition can be transmitted and handle.
Shown in Fig. 3 a and Fig. 3 b, place the radiation space image-position sensor at workpiece height place on the work stage datum plate to comprise the detection pattern transmittance plate of arranging along the light ray propagation direction 22 in the lithographic equipment, optical elements sets 33a/33b, 34a/34b, quantum switching film 35, the preposition conditioning processor 37 of radiation detector 36 and detectable signal, in addition, also comprise bohr element 38, it is distributed in the marginal portion between adjacent elements.
The front of detection pattern transmittance plate 32 is distributed with the detection pattern 31 of chopped radiation spatial image, and this radiation space image penetrates from the back side after ovennodulation from detection pattern 31 positive incidents.Pattern 31 on the described detection pattern transmittance plate 32 has the modulating characteristic that is easy to be detected, these characteristics comprise: unimodal value characteristic or multi-peak characteristic, valley characteristic, local edge, image identification characteristic, window features etc., handle the combination that can access one or several and they in these characteristics through serial detectable signal.
Detection pattern transmittance plate 22 back are optical elements sets:
Shown in Fig. 3 a, this optical elements sets is made up of 33a, 34a two parts, element 33a can be a kind of in concave surface post lens, concave surface globe lens, the Baltimore groove transmittance plate, element 34a is transparent post, this transparent post 34a is distributed in the rear of concave surface post lens or concave surface globe lens or Baltimore groove transmittance plate at a certain distance, the cylinder side of transparent post 34a scribbles the reflection horizon material, and its reflection efficiency is higher.Element 33a (concave surface post lens or concave surface globe lens or Baltimore groove transmittance plate) is assembled together or is connected as a single entity with the back side of detection pattern transmittance plate 32.
Shown in Fig. 3 b, this optical elements sets is made up of 33b, 34b two parts, element 33b can be a kind of in convex surface post lens, convex surface globe lens, the convex slot transmittance plate, element 34b is a lenticule, and this lenticule 34b is distributed in the rear of convex surface post lens or convex surface globe lens or convex slot transmittance plate at a certain distance.Element 33b (convex surface post lens or convex surface globe lens or convex slot transmittance plate) is assembled together or is connected as a single entity with the back side of detection pattern transmittance plate 32.
Being positioned at optical elements sets is quantum switching film 35 afterwards, it is grown on the incident test surface of radiation detector 36, this quantum switching film 35 can be an individual layer, it also can be multilayer, every layer of quantum switching film distributing a large amount of quantum dots or quantum wiregrating or quantum well, these quantum thin layers are grown on the transparency carrier (not shown), and the thickness of single thin film is in 20 nanometers～200 micrometer ranges.Described quantum dot, quantum wiregrating and the employed transition material of quantum well comprise: the potpourri that the compound with quantum conversion effet that is made of III family in the periodic table of elements and V family and they form, typical as: gallium arsenide, Aluminum gallium arsenide, indium phosphide, indium phosphide aluminium, gallium nitride, aluminum gallium nitride, gallium phosphide, gallium phosphide aluminium, nitrogen gallium phosphide, nitrogen InGaP and nitrogen gallium phosphide aluminium.
Radiation detector 36 links to each other with the preposition conditioning processor 37 of detectable signal by connecting line 39, constitutes detector of the present invention.
As Fig. 1 and Fig. 3 a, shown in Fig. 3 b, sensor detection method of the present invention is as follows: in the process that generation relative position in the locus of radiation space image and sensor 12 moves, pattern 31 modulation spatial images on its detection pattern transmittance plate 32 of sensor 12 usefulness that workpiece 9 is highly located, the spatial image that optical element 33a or 33b will modulate is through the processing of optical element 34a or 34b, project on the quantum switching film 35, after the quantum conversion, form new optical radiation, shine on the radiation detector 36, form electric signal, by the preposition conditioning processor 37 of detectable signal, detection obtains the variation of the polarization state of above-mentioned aerial image, the characteristic information of the radiation space image that acquisition can be transmitted and handle.
That more than introduces only is based on the preferred embodiments of the present invention, can not limit scope of the present invention with this.Any to the invention process step do well know in the art be equal to change or replace all do not exceed exposure of the present invention and protection domain.
Claims (13)
1, a kind of sensor of lithographic equipment, place the workpiece height place on the lithographic equipment work stage datum plate, this lithographic equipment has optical projection system, be used for patterned radiation laser beam is projected workpiece target part to form the radiation space image, described sensor comprises the detection pattern transmittance plate that is arranged in order along the light ray propagation direction, first optical element, the quantum switching film, second optical element, be used for the radiation detector that the coupling quantum switching film discharges optical radiation, and the preposition conditioning processor of detectable signal; Described detection pattern transmittance plate, its front is distributed with several detection pattern, is used for the chopped radiation spatial image, and this radiation space image penetrates from the back side after ovennodulation from the positive incident of described detection pattern; Described first optical element is lens element or prism, described second optical element comprises micro optical lens and optical filtering film, described quantum switching film is along the light ray propagation direction, is arranged on before the micro optical lens or between micro optical lens and the optical filtering film; Described sensor also comprises the bohr element, and it is distributed in the marginal portion between adjacent elements; It is characterized in that, in the process that generation relative position in the locus of radiation space image and sensor moves, the sensor at workpiece height place is modulated spatial image with the pattern on its detection pattern transmittance plate, the spatial image that first optical element will be modulated projects on the quantum switching film, after the quantum conversion, form new optical radiation, processing through micro optical lens, see through the optical filtering film, shine on the radiation detector, form electric signal, by the preposition conditioning processor of detectable signal, detection obtains the variation of the polarization state of above-mentioned spatial image, the characteristic information of the radiation space image that acquisition can be transmitted and handle.
2, sensor as claimed in claim 1 is characterized in that: described first optical element can be selected a kind of in protruding spherical lens, projection face lens, the convex surface triangular prism for use.
3, sensor as claimed in claim 1 is characterized in that: described first optical element is assemblied in the back side of detection pattern transmittance plate, and is perhaps integrally formed with the detection pattern transmittance plate.
4, a kind of sensor of lithographic equipment, place the workpiece height place on the lithographic equipment work stage datum plate, this lithographic equipment has optical projection system, be used for patterned radiation laser beam is projected workpiece target part to form the radiation space image, described sensor comprises the detection pattern transmittance plate that is arranged in order along the light ray propagation direction, optical elements sets, quantum switching film, radiation detector, and the preposition conditioning processor of detectable signal; Described detection pattern transmittance plate, its front is distributed with several detection pattern, is used for the chopped radiation spatial image, and this radiation space image penetrates from the back side after ovennodulation from the positive incident of described detection pattern; Described quantum switching film is grown on the incident test surface of radiation detector; Described sensor also comprises the bohr element, and it is distributed in the marginal portion between adjacent elements; It is characterized in that, in the process that generation relative position in the locus of radiation space image and sensor moves, the sensor at workpiece height place is modulated spatial image with the pattern on its detection pattern transmittance plate, this spatial image is through the modulation and the processing of optical elements sets, project on the quantum switching film, after the quantum conversion, form new optical radiation, shine on the radiation detector, form electric signal, by the preposition conditioning processor of detectable signal, detect the variation of the polarization state that obtains above-mentioned spatial image, the characteristic information of the radiation space image that acquisition can be transmitted and handle.
5, sensor as claimed in claim 4, it is characterized in that: described optical elements sets can be selected a kind of in the combination of combination, Baltimore groove transmittance plate and transparent post of combination, concave surface globe lens and transparent post of concave surface post lens and transparent post for use, and this transparent post is arranged on the back side of concave surface post lens or concave surface globe lens or Baltimore groove transmittance plate at a certain distance.
6, sensor as claimed in claim 5 is characterized in that: described concave surface post lens or concave surface globe lens or Baltimore groove transmittance plate are assemblied in the back side of detection pattern transmittance plate, and be perhaps integrally formed with the detection pattern transmittance plate.
7, sensor as claimed in claim 5 is characterized in that: the cylinder side of described transparent post scribbles the reflection horizon material.
8, sensor as claimed in claim 4, it is characterized in that: described optical elements sets can be selected a kind of in convex surface post lens and lenticular combination, convex surface globe lens and lenticular combination, convex slot transmittance plate and the lenticular combination for use, and this lenticule is arranged on the back side of convex surface post lens or convex surface globe lens or convex slot transmittance plate at a certain distance.
9, sensor as claimed in claim 8 is characterized in that: described convex surface post lens or convex surface globe lens or convex slot transmittance plate are assemblied in the back side of detection pattern transmittance plate, and be perhaps integrally formed with the detection pattern transmittance plate.
10, as claim 1 or 4 described sensors, it is characterized in that: the pattern on the described detection pattern transmittance plate has the modulating characteristic that is easy to be detected, and comprises one or more characteristics and combination thereof in unimodal value characteristic or multi-peak characteristic, valley characteristic, local edge, image identification characteristic, the window features.
11, as claim 1 or 4 described sensors, it is characterized in that: described quantum switching film be individual layer or multilayer, be distributed with quantum dot or quantum wiregrating or quantum well on every layer of quantum switching film, described quantum switching film is grown on the transparency carrier or is grown on the incident test surface of radiation detector; The thickness range of single thin film is 20 nanometers～200 micron.
12, sensor as claimed in claim 11 is characterized in that: described quantum dot, quantum wiregrating or the employed transition material of quantum well are by the compound with quantum conversion effet of III family and V group element in the periodic table of elements or II family and the element generation of IV family and the potpourri that they form.
13, as claim 1 or 4 described sensors, it is characterized in that: the radiation detector that the coupling quantum switching film discharges optical radiation is a kind of in photodiode, cmos sensor array, the ccd array feature identification device.
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| CNB2007100469550A CN100535761C (en) | 2007-10-11 | 2007-10-11 | Lithography device sensor and detection method |
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| CNB2007100469550A CN100535761C (en) | 2007-10-11 | 2007-10-11 | Lithography device sensor and detection method |
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| CN101286011B (en) * | 2008-05-30 | 2010-06-02 | 上海微电子装备有限公司 | Photolithography equipment detecting device, method and preparation method |
| NL2002998A1 (en) * | 2008-06-18 | 2009-12-22 | Asml Netherlands Bv | Lithographic apparatus. |
| CN102540744B (en) * | 2010-12-22 | 2014-07-16 | 上海微电子装备有限公司 | Mask alignment detecting device and method |
| CN102736426A (en) * | 2011-04-07 | 2012-10-17 | 上海微电子装备有限公司 | Integrated sensor for lithography device |
| CN107342239B (en) * | 2016-04-29 | 2019-10-25 | 上海微电子装备（集团）股份有限公司 | A kind of alignment measuring device and a kind of alignment system and method |
| CN107180889B (en) * | 2017-06-27 | 2020-02-14 | 上海集成电路研发中心有限公司 | Quantum well infrared detector for improving light absorption rate and manufacturing method thereof |
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| CN1591196A (en) * | 2003-08-29 | 2005-03-09 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN1862382A (en) * | 2005-02-28 | 2006-11-15 | Asml荷兰有限公司 | A sensor for use in a lithographic apparatus |
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| CN1591196A (en) * | 2003-08-29 | 2005-03-09 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN1862382A (en) * | 2005-02-28 | 2006-11-15 | Asml荷兰有限公司 | A sensor for use in a lithographic apparatus |
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