CN100535757C

CN100535757C - Substrate processing apparatus

Info

Publication number: CN100535757C
Application number: CNB2005101295646A
Authority: CN
Inventors: 安田周一; 金冈雅; 金山幸司; 宫城聪; 茂森和士; 浅野彻; 鸟山幸夫; 田口隆志; 三桥毅; 奥村刚
Original assignee: Screen Semiconductor Solutions Co Ltd
Priority date: 2004-12-06
Filing date: 2005-12-06
Publication date: 2009-09-02
Anticipated expiration: 2025-12-06
Also published as: CN1786827A

Abstract

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The drying processing block comprises a drying processing group. The interface block comprises an interface transport mechanism. A substrate is subjected to exposure processing by the exposure device, and subsequently transported to the drying processing group by the interface transport mechanism. The substrate is subjected to cleaning and drying processing by the drying processing group.

Description

Substrate board treatment

Technical field

The present invention relates to a kind of substrate board treatment that substrate is handled.

Background technology

For semiconductor substrate, base plate for liquid crystal display device, plasma display are carried out various processing with substrate, disk with the various substrates of substrate, optomagnetic base-board for plate, base board for optical mask etc. with substrate, CD, and use substrate board treatment.

In such substrate board treatment, generally a substrate is carried out a plurality of different processing continuously.The substrate board treatment that TOHKEMY 2003-324139 communique is put down in writing is made of with treatment region, development treatment district and interface area with treatment region, etchant resist indexing attachment district, antireflection film.Adjacent to interface area dispose with substrate board treatment and separate independently exposure device as external device (ED).

In the aforesaid substrate treating apparatus, the substrate of moving into from the indexing attachment district, after antireflection film has carried out the formation of antireflection film and etchant resist in treatment region with treatment region and etchant resist coating is handled, via the interface area conveyance in exposure device.In exposure device, the etchant resist on the substrate is carried out after the exposure-processed, substrate via the interface area conveyance in the development treatment district.By in the development treatment district etchant resist on the substrate being carried out after development treatment forms corrosion-resisting pattern, substrate transferring is to the indexing attachment district.

In recent years, be accompanied by the densification of device and highly integrated, the miniaturization of corrosion-resisting pattern becomes important problem.In general exposure device in the past, on substrate, carry out exposure-processed via the projecting lens reduced projection by pattern with graticule., in such exposure device in the past, because the live width of exposing patterns is by the optical source wavelength decision of exposure device, so the miniaturization of corrosion-resisting pattern is restricted.

Therefore, as the exposure method of the further miniaturization of exposing patterns having been proposed immersion method (for example with reference to international the 99/49504th trumpeter's volume that discloses).Disclose in the projection aligner of the 99/49504th trumpeter's volume in the world, full of liquid between projection optical system and the substrate, and can make the exposure light short wavelengthization of substrate surface.Thus, make the further miniaturization of the exposing patterns possibility that becomes.

, the above-mentioned world discloses in the projection aligner of the 99/49504th trumpeter's volume, owing to carry out exposure-processed under substrate and liquid state of contact, therefore, substrate is taken out of from exposure device with the state of attaching liq.Therefore, will be in the substrate board treatment of above-mentioned TOHKEMY 2003-324139 communique, adopt as exposure device that the above-mentioned world discloses the immersion method of being put down in writing in the 99/49504th trumpeter's volume when being provided with as external device (ED), drop in the substrate board treatment attached to the fluid drips on the substrate of taking out of, and the unusual of electrical system that substrate board treatment may take place waits action bad from exposure device.

Also have, substrate be exposed after the processing the water droplet residue and from the pollutions such as precipitate of the organic membrane on the substrate, thereby the processing that substrate may take place in the treatment process afterwards is bad.

Summary of the invention

The object of the present invention is to provide a kind of substrate board treatment, it can prevent by the action that causes attached to the liquid on the substrate in exposure device bad.

Another object of the present invention is to provide a kind of substrate board treatment, and its processing that can prevent the substrate that the pollution by the substrate after the exposure-processed causes is bad.

(1) substrate board treatment of an aspect of of the present present invention, dispose adjacent to exposure device, this exposure device is the exposure device that substrate is carried out exposure-processed by immersion method, it has: handling part, it is used for substrate is handled, the junction, its mode with the end that is adjacent to handling part is provided with, and is used for carrying out between handling part and exposure device the handing-over of substrate; Handling part comprises: first handles unit, this first processing unit is included in first processing unit that forms the photosensitive film that is made of photosensitive material on the substrate, first thermal treatment unit that substrate is heat-treated and the first conveyance unit of conveyance substrate, second handles unit, this second processing unit comprises second processing unit of having implemented to carry out after the exposure-processed dried of substrate by exposure device, second thermal treatment unit that substrate is heat-treated and the second conveyance unit of conveyance substrate, the 3rd handles unit, and the 3rd handles unit comprises the 3rd processing unit of having implemented after the dried substrate to be carried out development treatment by second processing unit, the 3rd thermal treatment unit that substrate is heat-treated and the 3rd conveyance unit of conveyance substrate; Second handles unit disposes in the mode that is adjacent to the junction.

In this substrate board treatment, in the first processing unit,, on substrate, form the photosensitive film that constitutes by photosensitive material by first processing unit.Then, substrate by the first conveyance unit conveyance to first thermal treatment unit, the thermal treatment of substrate being stipulated by first thermal treatment unit.Then, substrate via the junction from the handling part conveyance to exposure device, in exposure device, substrate is carried out exposure-processed.Substrate after the exposure-processed is handled unit via the junction from exposure device conveyance to the second.

Then, in the second processing unit, substrate is carried out dried by second processing unit.Then, substrate from the second processing unit conveyance to second thermal treatment unit, the thermal treatment of substrate being stipulated by second thermal treatment unit.Then, substrate by the second conveyance unit conveyance in the processing unit of adjacent other.

Then, handle in the unit, substrate is carried out development treatment by the 3rd processing unit the 3rd.Then, substrate is by the 3rd conveyance unit conveyance to the three thermal treatment units, the thermal treatment of substrate being stipulated by the 3rd thermal treatment unit.Then, substrate by the 3rd conveyance unit conveyance in the processing unit of adjacent other.

Like this, by second processing unit substrate after the exposure-processed is carried out dried.Here, because the second processing unit disposes in the mode that is adjacent to the junction, therefore can after exposure-processed, carry out dried immediately to substrate.Thus, even liquid is attached on the substrate in exposure device, can prevent that also this fluid drips from dropping in the substrate board treatment.Its result can prevent that the action of unusual grade of electrical system of substrate board treatment is bad.Also have,, prevent that dust etc. in the environment from attached on the substrate, therefore, can prevent the pollution of substrate by substrate is carried out dried.Thus, it is bad to reduce the processing of substrate.

Also have, can prevent really that the composition of the photosensitive material on the substrate is left in the liquid dissolving on the substrate in the process till substrate after dried is by conveyance to the three processing units.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.The result is that the processing of the substrate in the time of can preventing development treatment in the 3rd processing unit is bad.

Also have,, on the existing substrate board treatment that possesses the first and the 3rd processing unit, appended the structure of the second processing unit because this substrate board treatment has.Therefore it is bad to reduce the action processing bad and substrate of substrate board treatment with low cost.

(2) second processing units can also come substrate is carried out dried by supply with inert gas on substrate.At this moment, because of using inert gas, can make drying substrates reliably when therefore can prevent the chemical affect to the film on the substrate.

(3) handling part can also have unit of managing everywhere of the 4th conveyance unit that contains the 4th thermal treatment unit managing the unit everywhere, substrate is heat-treated, conveyance substrate, this the managed the unit everywhere before forming photosensitive film by above-mentioned first processing unit, formed antireflection film on substrate.At this moment, on substrate, form antireflection film, therefore can reduce standing wave and the halation that when exposure-processed, produces owing to manage the unit everywhere by the.The processing of the substrate that takes place in the time of thus, can further reducing exposure-processed is bad.

(4) can also further have substrate and move into the portion of taking out of, this substrate is moved into the portion of taking out of and is disposed in the mode of the other end of being adjacent to handling part, and this substrate is moved into the portion of taking out of and is used for substrate being moved into handling part and substrate being taken out of from handling part, everywhere the unit of managing also can move into the mode of the portion of taking out of and dispose to be adjacent to substrate.At this moment, can be successively with substrate transferring after handling part immediately the everywhere the unit of managing form antireflection film, then, handle unit first and form photosensitive film.Thus, can carry out the antireflection film on substrate and the formation of photosensitive film smoothly.

(5) junction can also comprise: the 5th processing unit, it carries out predetermined process to substrate, loading part, it is used for temporary transient mounting substrate, the 5th conveyance unit, it is used for conveyance substrate between handling part, the 5th processing unit and loading part, the 6th conveyance unit, and it is used for conveyance substrate between loading part, exposure device and second processing unit; The substrate transferring that the 6th conveyance unit further will be taken out of from exposure device is to second processing unit.

At this moment, after handling part carried out predetermined process to substrate, substrate was by the 5th conveyance unit conveyance to the five processing units.By the 5th processing unit substrate is carried out after the predetermined process, substrate by the 5th conveyance unit conveyance to loading part.Then, substrate by the 6th conveyance unit from the loading part conveyance to exposure device.In exposure device, substrate is carried out after the exposure-processed, substrate by the 6th conveyance unit conveyance to second processing unit.By second processing unit substrate is carried out after the dried, substrate by the 6th conveyance unit conveyance to loading part.Then, substrate by the 5th conveyance unit from the loading part conveyance to handling part.

So, the substrate after the exposure-processed is undertaken by second processing unit after the drying, and conveyance is to loading part.At this moment, even liquid is attached on the substrate in exposure device, can prevent that also this fluid drips from dropping in the substrate board treatment.Its result can prevent that the action of substrate board treatment is bad.

Also have, by dispose the 5th processing unit in the junction by carrying out the conveyance of substrate in 2 conveyance unit, even and do not increase the occupied area of substrate board treatment, also can append contents processing.

(6) the 6th conveyance unit further comprise first and second maintaining part that keeps substrate, the 6th conveyance unit from loading part with substrate transferring during to exposure device and from second processing unit with substrate transferring during to loading part, keep substrate by first maintaining part, during to second processing unit, keeping substrate from exposure device with substrate transferring by second maintaining part.

At this moment, use under the situation of the substrate that does not have attaching liq of first maintaining part before the conveyance exposure-processed and after the dried, and use under the situation of the substrate of the attaching liq of second maintaining part after the conveyance exposure-processed.For this reason, liquid that can not is attached to first maintaining part, therefore can prevent on the substrate before liquid is attached to exposure-processed.Thus, can prevent that dust etc. in the environment from attached on the substrate before the exposure-processed, therefore can prevent the pollution in the exposure device.Its result, the processing that can reduce the substrate that takes place in the exposure device is bad.

(7) second maintaining parts also can be arranged on the below of above-mentioned first maintaining part.At this moment, even from second maintaining part and by the substrate that it the kept liquid that drips, liquid can be attached on first maintaining part and the substrate that is held yet.Thus, can prevent before liquid is attached to exposure-processed reliably and on the substrate after the dried.

(8) the 5th processing units also can comprise the edge exposure portion that the periphery to substrate exposes.At this moment, the periphery to substrate carries out exposure-processed in edge exposure portion.

(9) second processing units also can further carry out the cleaning treatment to substrate before the dried of substrate.

At this moment, adhered to the process of substrate from the exposure device conveyance to second processing unit of liquid during with exposure, even the dust in the environment attached on the substrate, also can be removed this attachment really.Thus, can prevent really that the processing of substrate is bad.

(10) second processing units also can comprise: base plate keeping device, and its approximate horizontal ground keeps substrate; Rotating driving device, it makes the substrate that kept by base plate keeping device is that the center is rotated with the axle perpendicular to this substrate and the center by this substrate; Cleaning solution supplying portion, its with cleaning solution supplying to the substrate that keeps by base plate keeping device; The inert gas supply unit, it supplies with inert gas on substrate after supplying with cleaning fluid by cleaning solution supplying portion on substrate.

In this second processing unit, substrate is held in approximate horizontal by base plate keeping device, and substrate by rotating driving device with perpendicular to this substrate the axle be that the center is rotated.Also have, supply with cleaning fluid to substrate, then, supply with inert gas by the inert gas supply unit by cleaning solution supplying portion.

At this moment, supply with cleaning fluid when making the substrate rotation on substrate, therefore, the cleaning fluid on the substrate moves to substrate periphery portion by centrifugal force and disperses.Thereby the attachment that can prevent to be cleaned dust that liquid removed etc. really remains on the substrate.Also have, on substrate, supply with inert gas when making the substrate rotation, therefore, can get rid of the cleaning fluid that remains in after substrate cleaned on the substrate efficiently.Thus, the attachment of residual dust on the substrate etc. can be prevented really, drying substrates can be positively made simultaneously.Thereby, can prevent really in the process till substrate after dried is by conveyance to the three processing units that the composition of the photosensitive material on the substrate is left in the liquid dissolving on the substrate.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.Its result, the processing of the substrate in the time of can preventing in the 3rd processing unit development treatment is bad.

(11) thus the inert gas supply unit also can make the central part of cleaning fluid from the substrate that is supplied on the substrate by cleaning solution supplying portion move the mode that cleaning fluid is got rid of from substrate laterally, supply with inert gas.

At this moment, can prevent that cleaning fluid from remaining in the central part on the substrate, therefore, can prevent from really dried water spots to take place on the surface of substrate.Also have, can prevent really that the composition of photosensitive material is left in the cleaning fluid dissolving on the substrate in the process till substrate after dried is by conveyance to the three processing units.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.Its result, the processing of the substrate in the time of can preventing in the 3rd processing unit development treatment is bad.

(12) second processing units can also have the washing fluid supply unit, and this washing fluid supply unit and before supplying with inert gas by the inert gas supply unit, is supplied with washing fluid on substrate after supplying with cleaning fluid by cleaning solution supplying portion.

Therefore at this moment, can positively wash cleaning fluid, can prevent more reliably that the attachment of dust etc. from remaining on the substrate by washing fluid.

(13) thus the inert gas supply unit also can make the central part of washing fluid from the substrate that is supplied on the substrate by the washing fluid supply unit move the mode that washing fluid is got rid of from substrate laterally, supply with inert gas.

At this moment, can prevent that washing fluid from remaining in the central part on the substrate, therefore can prevent from really dried water spots to take place on the surface of substrate.Also have, can prevent really that the composition of photosensitive material is left in the cleaning fluid dissolving on the substrate in the process till substrate after dried is by conveyance to the three processing units.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.

(14) substrate board treatment of another aspect of the present invention, dispose in mode adjacent to exposure device, this exposure device is the exposure device that substrate is carried out exposure-processed by immersion method, wherein have: handling part, it is used for substrate is handled, the junction, its mode with the end that is adjacent to handling part disposes, and is used for carrying out between handling part and exposure device the handing-over of substrate; Handling part comprises: first handles unit, this first processing unit is included in first processing unit that forms the photosensitive film that is made of photosensitive material on the substrate, first thermal treatment unit that substrate is heat-treated and the first conveyance unit of conveyance substrate, second handles unit, this second is handled unit and comprises second processing unit of having implemented by fluid tip from the fluid-mixing that comprises liquid and gas to substrate that supply with substrate to be carried out after the exposure-processed cleaning treatment by exposure device, second thermal treatment unit that substrate is heat-treated and the second conveyance unit of conveyance substrate, the 3rd handles unit, and the 3rd handles unit comprises by second and handle the 3rd processing unit that unit has implemented substrate to be carried out after the cleaning treatment development treatment, the 3rd thermal treatment unit that substrate is heat-treated and the 3rd conveyance unit of conveyance substrate; Second handles unit disposes in the mode that is adjacent to above-mentioned junction.

In this substrate board treatment, in the first processing unit, on substrate, form the photosensitive film that constitutes by photosensitive material by first processing unit.Then, substrate by the first conveyance unit conveyance to first thermal treatment unit, the thermal treatment of substrate being stipulated by first thermal treatment unit.Then, substrate via the junction from the handling part conveyance to exposure device, in exposure device, substrate is carried out exposure-processed.Substrate after the exposure-processed is handled unit via the junction from exposure device conveyance to the second.

Then, in the second processing unit, substrate is carried out cleaning treatment by second processing unit.Then, substrate from the second processing unit conveyance to second thermal treatment unit, the thermal treatment of substrate being stipulated by second thermal treatment unit.Then, substrate by the second conveyance unit conveyance in the processing unit of adjacent other.

So, by second processing unit substrate after the exposure-processed is carried out cleaning treatment.Handle in the unit second, on substrate, supply with the fluid-mixing that contains gas and liquid by fluid tip.

At this moment, from the fluid-mixing that fluid tip ejects, contain fine droplets, therefore,, also can remove attached to the dirt in concavo-convex by fine droplets even exist under the concavo-convex situation on the surface of substrate.Thus, can remove dirt on the substrate surface really.Also have, under the situation that the film on the substrate is difficult for soaking, also can remove the dirt of substrate surface, therefore can remove the dirt on the substrate surface really by fine droplets.These results can prevent that the processing of the substrate that the pollution by the substrate after the exposure-processed causes is bad.

In addition, by the flow of adjustments of gas, can regulate the cleansing power when substrate cleaned easily.Thus, if the film on the substrate has under the situation of characteristic of rapid wear, can prevent film breakage on the substrate by weakening cleansing power.Also have, when the dirt on the substrate surface is difficult for removing, can remove the dirt of substrate surface really by strengthening cleansing power.So, regulate cleansing power, and when can prevent the breakage of the film on the substrate, positively cleaning base plate by degree according to the characteristic of the film on the substrate and dirt.

Also have,, on the existing substrate board treatment that possesses the first and the 3rd processing unit, appended the structure of the second processing unit because this substrate board treatment has.Therefore it is bad to reduce the processing of substrate with low cost.

(15) second processing units also can carry out cleaning treatment to substrate by supplying with the fluid-mixing that contains inert gas and cleaning fluid from fluid tip to substrate.

At this moment, because of having used inert gas, and when can prevent that film on the substrate and cleaning fluid are subjected to chemical affect, can remove the dirt on the substrate surface more really.Its result can prevent fully that the processing of the substrate that the pollution by the substrate after the exposure-processed causes is bad.

(16) second processing units also can be after carrying out cleaning treatment to substrate, and before above-mentioned the 3rd processing unit carries out development treatment to substrate, substrate is carried out dried.

At this moment, owing to the second processing unit disposes in the mode that is adjacent to the junction, so can after exposure-processed, carry out cleaning and dried immediately to substrate.Thus, even liquid is attached on the substrate in exposure device, can prevent that also this fluid drips from dropping in the substrate board treatment.Its result can prevent that the unusual of electrical system of substrate board treatment from waiting action bad.Also have,, prevent that dust etc. in the environment from attached on the substrate, therefore, can prevent the pollution of substrate by substrate is carried out dried.Thus, can prevent that the processing of substrate is bad.

Also have, can prevent really that the composition of the photosensitive material on the substrate is dissolved in the fluid-mixing that remains on the substrate in the process till substrate after dried is by conveyance to the three processing units.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.Its result, the processing of the substrate in the time of can preventing development treatment in the 3rd processing unit is bad.

(17) second processing units also can comprise the inert gas supply unit, and this inert gas supply unit carries out dried by supply with inert gas on substrate to substrate.At this moment, because of using inert gas, so can positively make drying substrates when can prevent chemical affect for the film on the substrate.

(18) fluid tip also can have the function of inert gas supply unit.At this moment, inert gas is supplied on the substrate by fluid tip, carries out the dried to substrate.Thus, need not to be provided with separately respectively inert gas supply unit and fluid tip.Its result can positively clean and dried substrate with simple structure.

(19) second processing units also can comprise: base plate keeping device, and its approximate horizontal keeps substrate; Rotating driving device, it makes the substrate that kept by the aforesaid substrate holding device is that the center is rotated with the axle perpendicular to this substrate and the center by this substrate.

In this second processing unit, substrate is held in approximate horizontal by base plate keeping device, and substrate by rotating driving device with perpendicular to this substrate the axle be that the center is rotated.Also have, the fluid-mixing that will be contained inert gas and cleaning fluid by fluid tip supplies on the substrate, then, supplies with inert gas by the inert gas supply unit.

At this moment, substrate rotation time cleaning fluid is fed on the substrate, therefore, can gets rid of the fluid-mixing that remains in after substrate cleaned on the substrate efficiently.Thus, when can prevent the attachment of dust residual on the substrate etc. really, can positively make drying substrates.Thereby, can prevent really that the composition of the photosensitive material on the substrate is dissolved in the fluid-mixing that remains on the substrate in the process till substrate after dried is by conveyance to the three processing units.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.Its result, the processing of the substrate in the time of can preventing development treatment in the 3rd processing unit is bad.

(20) thus second processing unit also can make the central part of fluid-mixing from the substrate that supplies on the substrate from fluid tip move the mode that fluid-mixing is got rid of from substrate laterally, supply with inert gas.

At this moment, can prevent that fluid-mixing from remaining in the central part on the substrate, therefore can prevent from really dried water spots to take place on the surface of substrate.Also have, can prevent really that the composition of the photosensitive material on the substrate is dissolved in the fluid-mixing that remains on the substrate in the process till substrate after dried is by conveyance to the three processing units.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.Its result, the processing of the substrate in the time of can preventing development treatment in the 3rd processing unit is bad.

(21) second processing units also may further include the washing fluid supply unit, and this washing fluid supply unit is after fluid tip is supplied with fluid-mixing, and before supplying with inert gas by the inert gas supply unit, supply with washing fluid on substrate.

Therefore at this moment, can positively wash fluid-mixing, can prevent more really that the attachment of dust etc. from remaining on the substrate by washing fluid.

(22) fluid tip also can have the function of washing fluid supply unit.At this moment, washing fluid is supplied on the substrate by fluid tip.Thus, do not need to be provided with separately respectively washing fluid supply unit and fluid tip.Its result can positively clean and dried substrate with simple structure.

(23) thus second processing unit also can be supplied with inert gas so that the central part of washing fluid from the substrate that is supplied on the substrate by the washing fluid supply unit moves the mode that washing fluid is got rid of from substrate laterally.

At this moment, can prevent that washing fluid from remaining in the central part on the substrate, therefore can prevent from really dried water spots to take place at the upper surface of substrate.Also have, can prevent really that the composition of the photosensitive material on the substrate is dissolved in the washing fluid that remains on the substrate in the process till substrate after dried is by conveyance to the three processing units.Thus, can prevent to be formed on the distortion of the exposing patterns on the photosensitive film really.Its result, the processing of the substrate in the time of can preventing development treatment in the 3rd processing unit is bad.

(24) fluid tip also can have: the liquid flow path of circulating liquid, the gas flow path of circulated gases is communicated with also liquid ejection outlet of opening and gas ejection ports with the aforesaid liquid stream, its be arranged on the aforesaid liquid injection orifice near, is communicated with simultaneously also opening with the above-mentioned gas stream.

At this moment, liquid communication liquid flow path and when ejecting from liquid ejection outlet, the gas communication gas flow path also ejects from gas ejection ports, and be harmonious at the outside liquid and the gas of fluid tip.Thereby, form vaporific fluid-mixing.

So, fluid-mixing is to be harmonious in the outside of fluid tip by liquid and gas with generating.Thus, do not need to be provided with the space that liquid and gas are harmonious in the inside of fluid tip.Its result can realize the miniaturization of fluid tip.

Description of drawings

Fig. 1 is the vertical view of the substrate board treatment of first embodiment of the invention;

Fig. 2 is a side view of observing the substrate board treatment Fig. 1 from+directions X;

Fig. 3 is a side view of observing the substrate board treatment Fig. 1 from-directions X;

Fig. 4 is the figure that is used to illustrate the structure of dried unit;

Fig. 5 a～Fig. 5 c is the figure that is used to illustrate the action of dried unit;

Fig. 6 is the synoptic diagram when cleaning treatment is arranged to one with nozzle and dried with nozzle;

Fig. 7 is the synoptic diagram of expression dried with other examples of nozzle;

Fig. 8 a～Fig. 8 c is the figure that is used for illustrating the drying method of the substrate the when dried of using Fig. 7 is used nozzle;

Fig. 9 is the synoptic diagram of expression dried with other examples of nozzle;

Figure 10 is the synoptic diagram of other examples of expression dried unit;

Figure 11 is the figure of the drying method of the substrate when being used for illustrating the cleaning treatment unit that uses Figure 10;

Figure 12 is used for the specification interface structure of carrying mechanism and the figure of action;

Figure 13 is the longitudinal sectional view that is illustrated in an in-built example of 2 fluid tips that use in cleaning and the dried;

Figure 14 a～Figure 14 c is the figure of the drying method of the substrate when being used for illustrating 2 fluid tips that use Figure 13.

Embodiment

Below, at the substrate board treatment of embodiments of the present invention, use accompanying drawing to describe.In the following description, so-called substrate is meant semiconductor substrate, base plate for liquid crystal display device, plasma display substrate, photomask glass substrate, CD substrate, disk substrate, optomagnetic base-board for plate, base board for optical mask etc.

(1) first embodiment

(1-1) structure of substrate board treatment

Fig. 1 is the vertical view of the substrate board treatment of first embodiment of the invention.

In each later figure of Fig. 1,, all indicate the arrow of expression orthogonal directions X, Y direction and Z direction for clear and definite its position relation.Directions X and Y direction are vertical mutually in surface level, and the Z direction is equivalent to vertical.In addition, in all directions, the direction of arrow points is made as+direction, its opposite direction is made as a direction.In addition, will be that the sense of rotation at center is made as the θ direction with the Z direction.

As shown in Figure 1, substrate board treatment 500 comprises: indexing attachment district 9, antireflection film treatment region 10, etchant resist treatment region 11, development treatment district 12, dried trivial 13 and interface area 14.Exposure device 15 is adjacent to configuration with interface area 14.In exposure device 15, substrate W is carried out exposure-processed by immersion method.

Below, each indexing attachment district 9, antireflection film are called the processing section with treatment region 10, etchant resist with treatment region 11, development treatment district 12, dried district 13 and interface area 14.

Indexing attachment district 9 comprises the master controller (control part) 30 of the action of controlling each treatment region, a plurality of carrier loading stage 40 and indexing attachment mechanical arm IR.Be provided with at indexing attachment mechanical arm IR and be used to join the hand IRH of substrate W.

Antireflection film comprises that with treatment region 10 antireflection film thermal treatment portion 100,101, antireflection film are with applying the handling part 50 and the first central robot CR1.Antireflection film is with coating handling part 50, across the first central robot CR1 and antireflection film with thermal treatment portion 100,101 relative to and be provided with.At the first central robot CR1, upper and lower settings is useful on hand CRH1, the CRH2 of handing-over substrate W.

Between indexing attachment district 9 and antireflection film are with treatment region 10, be provided with the next door 17 that isolation environment is used.On this next door 17, closely be provided with substrate loading part PASS1, PASS2 up and down, this substrate loading part PASS1, PASS2 are used for carrying out the handing-over of substrate W between indexing attachment district 9 and antireflection film are with treatment region 10.The substrate loading part PASS1 of upside uses when substrate W is used treatment region 10 from 9 conveyances of indexing attachment district to antireflection film, and the substrate loading part PASS2 of downside is using substrate W when antireflection film is used treatment region 10 conveyances to indexing attachment district 9.

In addition, in substrate loading part PASS1, PASS2, be provided with the sensor (not shown) that detects the optical profile type that has or not substrate W.Thus, can have or not the judgement of mounting substrate W at substrate loading part PASS1, PASS2.In addition, be provided with a plurality of supporting pins that are fixed and are provided with at substrate loading part PASS1, PASS2.In addition, the sensor of above-mentioned optical profile type and supporting pin are arranged on substrate loading part PASS3～PASS12 as described later too.

Etchant resist comprises that with treatment region 11 etchant resist thermal treatment portion 110,111, etchant resist are with applying the handling part 60 and the second central robot CR2.Etchant resist with coating handling part 60 across the second central robot CR2 and etchant resist with thermal treatment portion 110,111 relative to and be provided with.At the second central robot CR2, upper and lower settings be used to join hand CRH3, the CRH4 of substrate W.

Be provided with next door 18 that isolation environment use with treatment region 10 and etchant resist between with treatment region 11 at antireflection film.On this next door 18, closely be provided with substrate loading part PASS3, PASS4 up and down, this substrate loading part PASS3, PASS4 are used for carrying out between with treatment region 11 with treatment region 10 and etchant resist at antireflection film the handing-over of substrate W.The substrate loading part PASS3 of upside is using substrate W with treatment region 10 conveyances from antireflection film when etchant resist is used treatment region 11, and the substrate loading part PASS4 of downside is using substrate W with treatment region 11 conveyances from etchant resist when antireflection film is used treatment region 10.

Development treatment district 12 comprises develops with thermal treatment portion 120,121, development treatment portion 70 and the 3rd central robot CR3.Development treatment portion 70 across the 3rd central robot CR3 with develop with thermal treatment portion 120,121 relative to and be provided with.At the 3rd central robot CR3, upper and lower settings be used to join hand CRH5, the CRH6 of substrate W.

Between etchant resist is with treatment region 11 and development treatment district 12, be provided with the next door 19 that isolation environment is used.In this next door 19, closely be provided with substrate loading part PASS5, PASS6 up and down, this substrate loading part PASS5, PASS6 are used for carrying out the handing-over of substrate W between etchant resist is with treatment region 11 and development treatment district 12.The substrate loading part PASS5 of upside is using substrate W when etchant resist is used treatment region 11 conveyances to development treatment district 12, and the substrate loading part PASS6 of downside is being to use when substrate W is used treatment region 11 from 12 conveyances of development treatment district to etchant resist.

Dried district 13 comprises exposure back oven dry thermal treatment portion (PEB) 130,131, dried portion 80 and the 4th central robot CR4.PEB is adjacent to interface area 14 with thermal treatment portion 131, and has substrate loading part PASS9, PASS10 as described later like that.Dried portion 80 across the 4th central robot CR4 and dried PEB with thermal treatment portion 130,131 relative to and be provided with.At the 4th central robot CR4, upper and lower settings be used to join hand CRH7, the CRH8 of substrate W.

Between development treatment district 12 and dried district 13, be provided with the next door 20 that isolation environment is used.In this next door 20, closely be provided with substrate loading part PASS7, PASS8 up and down, this substrate loading part PASS7, PASS8 are used for carrying out the handing-over of substrate W between development treatment district 12 and dried district 13.The substrate loading part PASS7 of upside is using substrate W during from 12 conveyances of development treatment district to dried district 13, and the substrate loading part PASS8 of downside is being that substrate W is used during from 13 conveyances of dried district to development treatment district 12.

Interface area 14 comprises the 5th central robot CR5, sends the SBF of buffer store portion to, interface is with transport mechanism IFR and the EEW of edge exposure portion.In addition, the downside at the EEW of edge exposure portion is provided with the described RBF of buffer store portion and substrate loading part PASS11, the PASS12 of returning in back.At the 5th central robot CR5, upper and lower settings be used to join hand CRH9, the CRH10 of substrate W, and interface is provided with transport mechanism IFR and is used to join hand H5 and the hand H6 of substrate W.

In the substrate board treatment 500 of present embodiment, indexing attachment district 9, antireflection film treatment region 10, etchant resist treatment region 11, development treatment district 12, dried district 13 and interface area 14 have been arranged side by side successively along the Y direction.

Fig. 2 is a side view of observing the substrate board treatment 500 Fig. 1 from+directions X.

The antireflection film of using treatment region 10 at antireflection film is with applying handling part 50 (with reference to Fig. 1), and stacked on top of one another disposes 3 coating element BARC.Each coating element BARC has with flat-hand position absorption and keeps substrate W and the rotary chuck 51 that is rotated and supply with the supply nozzle 52 of the coating liquid of antireflection film to being maintained at substrate W on the rotary chuck 51.

The etchant resist of using treatment region 11 at etchant resist is with applying handling part 60 (with reference to Fig. 1), and stacked on top of one another disposes 3 coating element RES.Each coating element RES has with flat-hand position absorption and keeps substrate W and the rotary chuck 61 that is rotated and supply with the supply nozzle 62 of the coating liquid of etchant resist to being maintained at substrate W on the rotary chuck 61.

Development treatment portion 70 (with reference to Fig. 1) in development treatment district 12, stacked on top of one another disposes 5 development treatment cells D EV.Each development treatment cells D EV has with flat-hand position absorption and keeps substrate W and the rotary chuck 71 that is rotated and supply with the supply nozzle 72 of developer solution to being maintained at substrate W on the rotary chuck 71.

Dried portion 80 (with reference to Fig. 1) in dried district 13, stacked on top of one another disposes 3 dried cells D RY.In this dried cells D RY, carry out cleaning and dried to substrate W.The details of relevant dried cells D RY, the back is narrated again.

At interface area 14, stacked on top of one another disposes 2 EEW of edge exposure portion, returns the RBF of buffer store portion and substrate loading part PASS11, PASS12, disposes the 5th central robot CR5 (with reference to Fig. 1) and interface transport mechanism IFR simultaneously.Each EEW of edge exposure portion has the light illuminator 99 that keeps substrate W and the rotary chuck 98 that is rotated and the periphery that is maintained at the substrate W on the rotary chuck 98 is exposed with flat-hand position absorption.

Fig. 3 is a side view of observing the substrate board treatment 500 Fig. 1 from-directions X.

In the antireflection film thermal treatment portion 100 of antireflection film with treatment region 10, laminated configuration has 2 cooling units (coldplate) CP, and use thermal treatment portion 101 at antireflection film, stacked on top of one another disposes 4 heating unit (heating plate) HP and 2 cooling unit CP.In addition, in antireflection film thermal treatment portion 100,101, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost.

In the etchant resist thermal treatment portion 110 of etchant resist with treatment region 11, stacked on top of one another disposes 4 cooling unit CP, and uses thermal treatment portion 111 at etchant resist, and stacked on top of one another disposes 4 heating unit HP.In addition, in etchant resist thermal treatment portion 110,111, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost.

In the development thermal treatment portion 120 in development treatment district 12, stacked on top of one another disposes 4 cooling unit CP, and is developing with thermal treatment portion 121, and stacked on top of one another disposes 4 heating unit HP.In addition, developing, disposing the local control LC of the temperature of control cooling unit CP and heating unit HP at topmost respectively with thermal treatment portion 120,121.

In the PEB in dried district 13 thermal treatment portion 130, stacked on top of one another disposes 2 heating unit HP and 2 cooling unit CP, and use thermal treatment portion 131 at PEB, stacked on top of one another disposes 4 heating unit HP, 1 cooling unit CP, substrate loading part PASS9, PASS10 and 1 cooling unit CP.In addition, in PEB thermal treatment portion 130,131, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost.

In addition, the number of coating element BARC, RES, development treatment cells D EV, dried cells D RY, heating unit HP and cooling unit CP also can suitably change according to the processing speed of each processing section.

(1-2) action of substrate board treatment

Then, the action for the substrate board treatment 500 of present embodiment describes.

On the carrier loading stage 40 in indexing attachment district 9, move into the carrier C that multilayer accommodates many substrate W.Indexing attachment mechanical arm IR uses hand IRH to take out the untreated substrate W that is accommodated among the carrier C.Then, indexing attachment mechanical arm IR one edge ± directions X moves one edge ± θ direction rotation and moves, and untreated substrate W is reprinted substrate loading part PASS1.

In the present embodiment, adopt FOUP (front opening unified pod: front open type unified standard case) as carrier C, be limited to this but have more than, (Standard MechanicalInter Face: the standard mechanical interface) box maybe will hold substrate W and expose externally airborne OC (opencassette: open box) etc. to the open air also can to use SMIF.Further, at indexing attachment mechanical arm IR, first～the 5th central robot CR1～CR5 and interface transport mechanism IFR, use the straight ejector half carrying manipulator of the advance and retreat action of carrying out hand with respect to substrate W linear slide respectively, be limited to this but have more than, also can use the multi-joint type mechanical arm that carries out the straight line advance and retreat action of hand by joint action.

Reprinted the untreated substrate W on the substrate loading part PASS1, the first central robot CR1 with treatment region 10 accepts by antireflection film.The first central robot CR1 moves into antireflection film thermal treatment portion 100,101 with substrate W.Then, the first central robot CR1 takes out heat treated substrate W from antireflection film with thermal treatment portion 100,101, and moves into antireflection film with applying handling part 50.With applying in the handling part 50, the standing wave and the halation that produce when exposing in order to reduce apply the formation antireflection film by coating element BARC on substrate W at this antireflection film.

Then, the first central robot CR1 takes out the substrate W that coating was handled from antireflection film coating handling part 50, and moves into antireflection film with in the thermal treatment portion 100,101.Then, the first central robot CR1 takes out heat treated substrate W from antireflection film with thermal treatment portion 100,101, and reprints on the substrate loading part PASS3.

Reprinted the substrate W on the substrate loading part PASS3, the second central robot CR2 with treatment region 11 accepts by etchant resist.The second central robot CR2 moves into etchant resist with in the thermal treatment portion 110,111 with substrate W.Then, the second central robot CR2 takes out heat treated substrate W from etchant resist with thermal treatment portion 110,111, and moves into etchant resist with applying handling part 60.This etchant resist with coating handling part 60 in, formed in coating by coating element RES that coating forms etchant resist on the substrate W of antireflection film.

Then, the second central robot CR2 takes out the substrate W that coating was handled from etchant resist with coating handling part 60, and moves into etchant resist with in the thermal treatment portion 110,111.Then, the second central robot CR2 takes out heat treated substrate W from etchant resist with thermal treatment portion 110,111, and reprints on the substrate loading part PASS5.

Reprinted the substrate W on the substrate loading part PASS5, by the 3rd central robot CR3 acceptance in development treatment district 12.The 3rd central robot CR3 reprints substrate W on the substrate loading part PASS7.

Reprinted the substrate W on the substrate loading part PASS7, by the 4th central robot CR4 acceptance in dried district 13.The 4th central robot CR4 reprints substrate W on the substrate loading part PASS9.Reprinted the substrate W on the substrate loading part PASS9, by the 5th central robot CR5 acceptance of interface portion 14.The 5th central robot CR5 moves into the EEW of edge exposure portion with substrate W.In the EEW of this edge exposure portion, the periphery of substrate W is implemented exposure-processed.

Then, the 5th central robot CR5 takes out the substrate W that edge exposure was handled from the EEW of edge exposure portion, and reprints on the substrate loading part PASS11.Reprinted the substrate W on the substrate loading part PASS 11, moved in the exposure device 15 with transport mechanism IFR by interface.After in exposure device 15, substrate W having been implemented exposure-processed, interface with transport mechanism IFR with substrate W conveyance to dried portion 80.In dried portion 80, by dried cells D RY substrate W is cleaned and dried as described above.Finish in dried portion 80 after the dried to substrate, interface is reprinted substrate W on the substrate loading part PASS12 with transport mechanism IFR.In addition, narrate in the back with the detailed content of transport mechanism IFR about interface.

Reprinted the substrate W on the substrate loading part PASS12, by the 5th central robot CR5 acceptance of interface area 14.The 5th central robot CR5, the PEB that substrate W is moved into dried district 13 is with thermal treatment portion 131.Use in the thermal treatment portion 131 oven dry (PEB) after substrate W is exposed at PEB.Also have, also can carry out the oven dry after the exposure of substrate with thermal treatment portion 130 by PEB.

Then, the 5th central robot CR5 takes out heat treated substrate W from PEB with thermal treatment portion 131, and reprints on the substrate loading part PASS10.Reprinted the substrate W on the substrate loading part PASS10, by the 4th central robot CR4 acceptance in dried district 13.The 4th central robot CR4 reprints substrate W on the substrate loading part PASS8.

Reprinted the substrate W on the substrate loading part PASS8, by the 3rd central robot CR3 acceptance in development treatment district 12.The 3rd central robot CR3 moves into substrate W in the development treatment portion 70.In development treatment portion 70, the substrate W that exposed is carried out development treatment.Then, the 3rd central robot CR3 takes out the substrate W that development treatment is crossed from development treatment portion 70, and moves into and develop with in the thermal treatment portion 120,121.

Then, the 3rd central robot CR3 takes out heat treated substrate W from developing with thermal treatment portion 120,121, and reprints on the substrate loading part PASS6.Reprinted the substrate W on the substrate loading part PASS6, the second central robot CR2 with treatment region 11 is reprinted on the substrate loading part PASS4 by etchant resist.Reprinted the substrate W on the substrate loading part PASS4, the first central robot CR1 with treatment region 10 is reprinted on the substrate loading part PASS2 by antireflection film.

Reprinted the substrate W on the substrate loading part PASS2, the indexing attachment mechanical arm IR by indexing attachment district 9 is incorporated among the carrier C.Thus, the various processing of substrate board treatment that are through with to substrate W.

(1-3) dried unit

At this,, utilize accompanying drawing to be described in detail about above-mentioned dried cells D RY.

(1-3a) structure of dried unit

The structure of dried cells D RY at first, is described.Fig. 4 is the figure that is used to illustrate the structure of dried cells D RY.

As shown in Figure 4, dried cells D RY has rotary chuck 621, when this rotary chuck 621 is used for flatly keeping substrate W, is that the center makes substrate W rotation with the vertical turning axle by substrate W center.

Rotary chuck 621 is fixed on the upper end by the turning axle 625 of chuck rotary drive mechanism 636 rotations.Also have, on rotary chuck 621, be formed with air-breathing path (not shown), by getting rid of the air in the air-breathing path under the state that on rotary chuck 621, is mounted with substrate W, and with the lower surface vacuum suction of substrate W on rotary chuck 621, thereby substrate can be kept with flat-hand position.

Be provided with first rotation motor 660 in the outside of rotary chuck 621.On first rotation motor 660, be connected with first turning axle 661.Also have, first arm 662 is connected on first turning axle 661 in the mode of extending to horizontal direction, is provided with cleaning treatment with nozzle 650 at the front end of first arm 662.

In the time of by 661 rotations of first rotation motor, 660, the first turning axles, first arm 662 also rotates, and cleaning treatment moves to the top of the substrate W that is rotated chuck 621 maintenances with nozzle 650.

Be provided with cleaning treatment with supply pipe 663 in the mode of the inside of passing first rotation motor 660, first turning axle 661 and first arm 662.Cleaning treatment is connected on cleaning solution supplying source R1 and the washing fluid supply source R2 by valve Va and valve Vb with supply pipe 663.Unlatching by controlling this valve Va, Vb is with closed, can supply to cleaning treatment with the selection of the treating fluid of supply pipe 663 and the adjusting of quantity delivered.In the structure of Fig. 4,, can supply with cleaning fluid with supply pipe 663 to cleaning treatment, and, can supply with washing fluid with supply pipe 663 to cleaning treatment by open valve Vb by open valve Va.

Cleaning treatment with nozzle 650, is supplied with cleaning fluid or washing fluid with supply pipe 663 from cleaning solution supplying source R1 or washing fluid supply source R2 by cleaning treatment.Thus, can supply with cleaning fluid or washing fluid to the surface of substrate W.As cleaning fluid, the liquid that dissolved complex compound (carrying out Ionized) in for example pure water, the pure water or fluorine class soup etc. have been adopted.As washing fluid, adopted among for example pure water, carbonated water, hydrogeneous water, electrolytic ionic water and the HFE (hydrogen fluorine ether) any.

In the outside of rotary chuck 621, be provided with second rotation motor 671.On second rotation motor 671, be connected with second turning axle 672.Also have, second arm 673 is connected on second turning axle 672 in the mode of extending to horizontal direction, is provided with dried with nozzle 670 at the front end of second arm 673.

In the time of by 672 rotations of second rotation motor, 671, the second turning axles, second arm 673 also rotates, and dried moves to the top of the substrate W that is rotated chuck 621 maintenances with nozzle 670.

Be provided with dried with supply pipe 674 in the mode of the inside of passing second rotation motor 671, second turning axle 672 and second arm 673.Dried is connected to inert gas supply source R3 with supply pipe 674 by valve Vc.By the unlatching and closure of controlling this valve Vc, can regulate supplying to the quantity delivered of dried with the inert gas of supply pipe 674.

Dried with nozzle 670, is supplied with inert gas with supply pipe 674 from inert gas supply source R3 by dried.Thus, can supply with inert gas to the surface of substrate W.For example adopt nitrogen (N as inert gas ₂).

When cleaning fluid and washing fluid were supplied with in the surface of substrate W, cleaning treatment was positioned at the top of substrate W with nozzle 650, and when inert gas was supplied with on the surface of substrate W, cleaning treatment was kept out of the way the position of stipulating with nozzle 650.

Also have, when cleaning fluid or washing fluid were supplied with in the surface of substrate W, dried was kept out of the way the position of stipulating with nozzle 670, and when inert gas was supplied with on the surface of substrate W, dried was positioned at the top of substrate W with nozzle 670.

The substrate W that remains in rotary chuck 621 is accommodated in the process cartridge 623.Be provided with the spaced walls 633 of tubular in the inboard of process cartridge 623.Also have, with surround rotary chuck 621 around mode be formed with the discharge opeing space 631 of the used treating fluid of processing (cleaning fluid or washing fluid) that is used for discharging substrate W.And then, between process cartridge 623 and spaced walls 633, formed the recovery liquid space 632 of the used treating fluid of processing that is used for reclaiming substrate W in the mode of surrounding discharge opeing space 631.

Be connected with in discharge opeing space 631 and be used for, and be connected with and be used for reclaiming space 632 the lead recovery tube 635 of recycling and processing device (not shown) for the treatment of fluid with the lead discharging tube 634 of discharge opeing treating apparatus (not shown) for the treatment of fluid.

Above process cartridge 623, be provided with the protective device 624 that is used to prevent that the treating fluid from substrate W from dispersing laterally.This protective device 624 forms with respect to turning axle 625 rotational symmetric shapes.Inner face in the upper end of protective device 624 is formed with the discharge opeing guiding groove 641 of cross section for " く " word shape with ring-type.

Also have, be formed with the recovery liquid guide portion 642 that constitutes by the dip plane that tilts below laterally at the inner face of protective device 624 bottoms.Near the upper end of reclaiming liquid guide portion 642, be formed with the spaced walls holding tank 643 of the spaced walls 633 that is used to hold process cartridge 623.

On this protective device 624, be provided with the protective device lift drive mechanism (not shown) that constitutes by ball screw framework etc.The protective device lift drive mechanism moves up and down protective device 624 between recovery position and discharge opeing position, above-mentioned recovery position be meant reclaim liquid guide portion 642 relative with the peripheral end face that is rotated the substrate W that chuck 621 keeps to the position, and above-mentioned discharge opeing position be meant the peripheral end face of discharge opeing guiding groove 641 and the substrate W that is rotated chuck 621 maintenances relative to the position.When protective device 624 was positioned at recovery position (position of protective device as shown in Figure 4), the treating fluid that disperses laterally from substrate W was directed to the recovery liquid space 632 by reclaiming liquid guide portion 642, and is recovered by recovery tube 635.On the other hand, when protective device 624 was positioned at the discharge opeing position, the treating fluid that disperses laterally from substrate W was directed to the discharge opeing space 631 by discharge opeing guiding groove 641, and is discharged from by discharging tube 634.By above structure, carry out the discharge and the recovery for the treatment of fluid.

(1-3b) action of dried unit

Then, the processing action about dried cells D RY with said structure describes.In addition, below the action of each constitutive requirements of illustrated dried cells D RY, be by 30 controls of the master controller among Fig. 1.

At first, when moving into substrate W, when protective device 624 descended, the interface among Fig. 1 was loaded into substrate W on the rotary chuck 621 with transport mechanism IFR.The substrate W that is loaded on the rotary chuck 621 is kept by rotary chuck 621 absorption.

Then, when protective device 624 moved to above-mentioned discharge opeing position, cleaning treatment moved to the central part top of substrate W with nozzle 650.Then, turning axle 625 rotates, and is accompanied by this rotation, and the substrate W that is maintained on the rotary chuck 621 also rotates.Then, cleaning fluid is ejected into the upper surface of substrate W with nozzle 650 from cleaning treatment.Thus, carry out cleaning to substrate W.In addition, to the supply of the cleaning fluid of substrate W, also can use soft injection (the ソ Off トスプレ one) mode of 2 fluid tips.The example of dried cells D RY during 2 fluid tips of relevant use describes in the 2nd embodiment.

Through after the stipulated time, the supply of cleaning fluid is stopped, and ejects washing fluid from cleaning treatment with nozzle 650.Thus, the cleaning fluid on the substrate W is rinsed.

After passing through the stipulated time again, the rotating speed of turning axle 625 reduces.Thus, reduced by the amount of the washing fluid that got rid of, shown in Fig. 5 a, form the liquid layer L of washing fluid on all on the surface of substrate W by the rotation of substrate W.In addition, also can stop the rotation axle 625 rotation and form liquid layer L on all on the surface of substrate W.

In the present embodiment, in the supply of the supply of cleaning fluid and washing fluid, adopted shared cleaning fluid to handle structure with nozzle 650, so that can supply with cleaning fluid and the washing fluid any from cleaning fluid treating fluid nozzle 650, but, also can adopt respectively the structure of nozzle of nozzle that cleaning solution supplying separately uses and washing fluid supply usefulness.

Also have, when supplying with washing fluid, be back to the lower surface of substrate W in order not make washing fluid, also can never illustrated anti-flushing (バ _ッNetwork リ Application ス) supplies with pure water with nozzle to the back side of substrate W.

In addition, when the cleaning fluid of cleaning base plate W adopts pure water, also can not supply with washing fluid.

Then, stop the supply of washing fluid, when cleaning treatment was kept out of the way the position of regulation with nozzle 650, dried moved to the central part top of substrate W with nozzle 670.Then, eject inert gas from dried with nozzle 670.Thus, shown in Fig. 5 b, the washing fluid of the central part of substrate W moves to the periphery of substrate W, and becomes the state that only has liquid layer L at the periphery of substrate W.

Then, in the time of the faster rotational speed of turning axle 625 (with reference to figure 4), shown in Fig. 5 c, dried little by little moves to the periphery top with nozzle 670 above the central part of substrate W.Thus, when the liquid layer L of substrate W is subjected to very big centrifugal action, can all brushes inert gas to the surface of substrate W, thereby can remove the liquid layer L on the substrate W really.As a result, can positively carry out drying to substrate W.

Then, the supply of inert gas is stopped, and when dried was kept out of the way the position of regulation with nozzle 670, the rotation of turning axle 625 stopped.Then, when protective device 624 descended, the interface among Fig. 1 was taken out of substrate W with transport mechanism IFR from dried cells D RY.Thus, the processing that finishes in dried cells D RY is moved.

In addition, preferably suitably change according to the recovery for the treatment of fluid or the necessity of discharge opeing the position of the protective device 624 in cleaning and the dried.

Also have, in dried cells D RY as shown in Figure 4, cleaning treatment with nozzle 650 be to separate independent the setting in dry processing with nozzle 670, still, as shown in Figure 6, also cleaning treatment can be arranged to one with nozzle 650 and dried with nozzle 670.In this case, when cleaning treatment or dried substrate W, need not cleaning treatment is moved separately respectively with nozzle 670 with nozzle 650 and dried, therefore, can realize simplification driving mechanism.

(1-3c) other examples of dried unit

Also have, also can replace dried and use nozzle 670 and use dried as shown in Figure 7 nozzle 770.

Dried among Fig. 7 when vertical lower is extended, has the take-off pipe 771,772 that extends to oblique below from the side with nozzle 770.With the lower end of nozzle 770 and the lower end of take-off pipe 771,772, be formed with gas ejection ports 770a, the 770b, the 770c that spray inert gas in dried.From each

injection orifice

770a, 770b, 770c, shown in the arrow among Fig. 7, spray inert gas respectively to the vertical lower and the below that tilts.That is to say that dried is sprayed inert gas with nozzle 770 in the mode that enlarges spray regime downwards.

At this, when adopting dried with nozzle 770, dried cells D RY carries out dried to substrate W by the action of following explanation.

Fig. 8 a～Fig. 8 c is the figure that is used to illustrate the drying method of the substrate W when using dried to use nozzle 770.

At first, according to the method that illustrates among Fig. 5 a, after the surface of substrate W has formed liquid layer L, shown in Fig. 8 a, again dried is moved to the central part top of substrate W with nozzle 770.Then, spray inert gas from dried with nozzle 770.Thus, shown in Fig. 8 b, the washing fluid of substrate W central part moves to the periphery of substrate W, and becomes the state that only has liquid layer L at the periphery of substrate W.In addition, at this moment, make dried with the surface of nozzle 770, so that the washing fluid of the central part that is present in substrate W is moved near substrate W.

Then, when the rotating speed of turning axle 625 (with reference to figure 4) promoted, shown in Fig. 8 c, dried moved to the top with nozzle 770.Thus, very big centrifugal action in the time of the liquid layer L on the substrate W, the expanded range of the injected inert gas on the substrate W.As a result, can remove liquid layer L on the substrate W really.In addition, by making 672 oscilaltions of second turning axle, dried can move up and down with nozzle 770, and the oscilaltion of second turning axle 672 is to be undertaken by the turning axle elevating mechanism (not shown) that is arranged on second turning axle 672 among Fig. 4.

Also have, also can replace dried and use nozzle 770 and use dried as shown in Figure 9 nozzle 870.Dried among Fig. 9 nozzle 870, having downwards, diameter becomes big injection orifice 870a gradually.From this injection orifice 870a, shown in the arrow among Fig. 9, spray inert gas to the vertical lower and the below that tilts.That is to say that dried with nozzle 770, is also sprayed inert gas in the mode that enlarges spray regime downwards as the dried among Fig. 7 with nozzle 870.Thereby, when adopting dried, also can carry out dried by method same when adopting dried with nozzle 770 to substrate W with nozzle 870.

Also have, also can replace dried cells D RY as shown in Figure 4 and use as shown in figure 10 dried cells D RYa.

The difference of dried cells D RYa shown in Figure 10 and dried cells D RY shown in Figure 4 is as follows.

Among the dried cells D RYa among Figure 10, above rotary chuck 621, be provided with the discoideus baffle board 682 that central part has opening.Be provided with back shaft 689 near the direction to the vertical lower front end of arm 688, and in the lower end of this back shaft 689, with relative with the upper surface that is rotated the substrate W that chuck 621 kept to mode baffle board 682 is installed.

In the inside of back shaft 689, insert gas feed path 690 through the opening that is communicated to baffle board 682.Supply with for example nitrogen (N in the gas feed path 690 ₂).

On arm 688, be connected with baffle board lift drive mechanism 697 and baffle board rotary drive mechanism 698.Baffle board lift drive mechanism 697 makes baffle board 682 near the position of the upper surface that is rotated the substrate W that chuck 621 keeps and move up and down between the position that rotary chuck 621 leaves upward.

Among the dried cells D RYa of Figure 10, when substrate W is carried out dried, as shown in figure 11, under the state that makes baffle board 682 near substrate W, inert gas is supplied with from gas feed path 690 in the gap between substrate W and the baffle board 682.At this moment, because can supply with inert gas efficiently to periphery, therefore can remove the liquid layer L on the substrate W really from the central part of substrate W.

Also have, in the above-mentioned embodiment,, implemented dried, still, also can pass through other drying means such as drying under reduced pressure method, squeegee drying means, substrate W enforcement dried to substrate W according to the Rotary drying method at dried cells D RY.

In addition, in the above-mentioned embodiment, under the state of the liquid layer L that has formed washing fluid, supply with inert gas from dried with nozzle 670, but, in the situation of the liquid layer L that does not form washing fluid or do not use under the situation of washing fluid, also can rotary plate W and in case get rid of after the liquid layer, immediately from dried with nozzle 670 supply inert gases and make substrate W bone dry.

(1-3d) effect of dried unit

As mentioned above, in the substrate board treatment 500 of present embodiment, in exposure device 15, substrate W is carried out in dried portion 80 substrate W being carried out dried after the exposure-processed.At this moment, attached to the liquid on the substrate W, in dried cells D RY, be removed during exposure-processed.Thus, substrate W is when conveyance is to indexing attachment district 9 with treatment region 10 with treatment region 11 and antireflection film via interface area 14, dried district 13, development treatment district 12, etchant resist from dried portion 80, can prevent to the substrate board treatment 500 inside liquid that drips.As a result, can prevent that the action of unusual grade of electrical system of substrate board treatment 500 is bad.

Also have, in dried cells D RY, spray inert gas from the central part of substrate W to periphery on one side, substrate W is carried out dried by one side rotary plate W.Therefore at this moment, can remove cleaning fluid and washing fluid on the substrate W really, can prevent really that dust etc. in the environment is attached on the substrate W after cleaning.Thus, when can prevent the pollution of substrate W really, can prevent from dried water spots to take place on substrate W surface.

Also have, owing to can prevent residual cleaning fluid and washing fluid on the substrate W after the cleaning really, therefore can prevent really substrate W from dried cells D RY by conveyance to the process of development treatment portion 70, the composition of resist is cleaned liquid and washing fluid dissolving.Thus, can prevent to be formed on the distortion of the exposing patterns on the etchant resist.The result is the reduction of the live width precision in the time of preventing development treatment really.

In addition, in dried cells D RY, carry out the cleaning treatment of substrate W before to the dried of substrate W.At this moment, the substrate W that the time is attached liquid in exposure from exposure device 14 conveyances to the process of dried cells D RY, even the dust in the environment etc. also can be removed this attachment really attached on this substrate W.

These result is to prevent really that the processing of substrate W is bad.

Also have, the substrate board treatment 500 of present embodiment owing to have the structure of having appended dried district 13 on existing substrate board treatment, therefore can prevent the pollution of the bad and substrate W of the action of substrate board treatment 500 with low cost.

(1-4) interface transport mechanism

Then, describe with transport mechanism IFR at interface.Figure 12 is used for the specification interface structure of carrying mechanism IFR and the figure of action.

(1-4a) the interface structure and the action of transport mechanism

At first, describe at the structure of interface with transport mechanism IFR.As shown in figure 12, interface screws togather with screw axis 32 with the movable table 31 of transport mechanism IFR.Screw axis 32 is rotatably supported by brace table 33 in the mode of extending to directions X.End at screw axis 32 is provided with motor M1, by this motor M1 screw axis 32 rotation, and movable table 31 is moved horizontally on ± directions X.

In addition, hand support platform 34 with rotatable on ± θ direction and on ± Z-direction liftable mode carry on movable table 31.Hand support platform 34 is connected via the motor M2 in turning axle 35 and the movable table 31, by this motor M2, and 34 rotations of hand support platform.At hand support platform 34, can advance and retreat is arranged with two hand H5, H6 that keep substrate W with flat-hand position on the ground.

Then, the action with transport mechanism IFR describes at interface.Interface is to be controlled by the master controller 30 of Fig. 1 with the action of transport mechanism IFR.

At first, interface transport mechanism IFR, at the position of Figure 12 A, edge+Z direction rises when making 34 rotations of hand support platform, and makes the hand H5 of upside enter into substrate loading part PASS11.In substrate loading part PASS11, if hand H5 receives substrate W, then interface makes hand H5 retreat from substrate loading part PASS11 with transport mechanism IFR, and hand support platform 34 edge-Z directions are descended.

Then, interface moves with transport mechanism IFR edge-directions X, and when position B made 34 rotations of hand support platform, the substrate that makes hand H5 enter into exposure device 15 was moved into the 15a of portion (with reference to figure 1).Substrate W is moved into substrate move into after the 15a of portion, interface makes hand H5 move into the 15a of portion from substrate with transport mechanism IFR and retreats.

Then, the interface substrate that makes the hand H6 of downside enter into exposure device 15 with transport mechanism IFR is taken out of the 15b of portion (with reference to figure 1).Take out of among the 15b of portion at substrate, if hand H6 accepts the substrate W after the exposure-processed, then interface makes hand H6 take out of the 15b of portion from substrate with transport mechanism IFR to retreat.

Then, interface moves with transport mechanism IFR edge+directions X, and edge+Z direction rises when position A makes 34 rotations of hand support platform, makes hand H6 enter into the dried cells D RY of dried portion 80.Substrate W is moved into after the dried cells D RY, and interface makes hand H6 retreat from dried cells D RY with transport mechanism IFR.

Then, interface makes hand H5 enter into dried cells D RY with transport mechanism IFR, and accepts the substrate W after the dried.Then, interface makes hand H5 retreat from dried cells D RY with transport mechanism IFR.

Then, edge ± Z direction rose or descends when interface made 34 rotations of hand support platform with transport mechanism IFR, made hand H5 enter into substrate loading part PASS12, and substrate W is reprinted on the substrate loading part PASS12.

In addition, with substrate W from substrate loading part PASS11 conveyance during to exposure device 15, can not accept at exposure device 15 under the situation of substrate W, in case substrate W conveyance is waited for and sending to till exposure device 15 can be accepted among the SBF of buffer store portion to sending among the SBF of buffer store portion.

Also have, with substrate W during from exposure device 15 conveyances to dried portion 80, can not accept in dried portion 80 under the situation of substrate W, in case substrate W conveyance to returning among the RBF of buffer store portion, and dried portion 80 waits in returning the RBF of buffer store portion till can accepting.

(1-4b) the interface effect of transport mechanism

As mentioned above, in the present embodiment, with substrate W from substrate loading part PASS11 conveyance during during to exposure device 15 and from 80 conveyances of dried portion to substrate loading part PASS12, use the hand H5 of interface with transport mechanism IFR, and substrate W during from exposure device 15 conveyances to dried portion 80, is used hand H6.That is, after exposure-processed, there is the conveyance of the substrate W that liquid adheres to use hand H6, and do not have the conveyance of the substrate W that liquid adheres to use hand H5.Thereby the liquid that can not of substrate W is attached on the hand H5.

In addition, hand H6 is arranged on the below of hand H5, so even liquid drips from hand H6 and the substrate W that is held, liquid can be attached on hand H5 and the substrate that the is held W yet.

These result is, can prevent really on the substrate W after liquid is attached to dried, so it is bad to prevent to drip to owing to liquid the action of the substrate board treatments 500 that cause in the substrate board treatment 500 more really.

Also have, also can prevent on the substrate W before liquid is attached to exposure-processed, can prevent that therefore dust etc. in the environment is attached on the substrate W before the exposure-processed.Thus, can prevent that exposure device 15 is inner contaminated, therefore can be reduced in the exposure device 15 bad the processing of substrate W.

(1-4c) the interface variation of transport mechanism

In addition, in the present embodiment, by 1 interface transport mechanism IFR, substrate W is carried out the conveyance from substrate loading part PASS11 to exposure device 15, conveyance and the conveyance from dried portion 80 to substrate loading part PASS12 from exposure device 15 to dried portion 80, but also can use many interfaces to carry out the conveyance of substrate W with transport mechanism IFR.

In addition, also can move into the position that the 15a of portion and substrate are taken out of the 15b of portion according to the substrate of exposure device 15, the change interface is with action and the structure of transport mechanism IFR.For example, the substrate of exposure device 15 move into the 15a of portion and substrate take out of the 15b of portion be arranged in position A with Figure 12 relative to the position time, the screw axis 32 among Figure 12 also can be set.

(2) second embodiments

(2-1) the dried unit of 2 fluid tips of employing

The difference of the substrate board treatment of the substrate board treatment of second embodiment and first embodiment is, in dried cells D RY, adopted 2 fluid tips as shown in figure 13 and replace cleaning treatment among Fig. 4 with nozzle 650 and dried with nozzle 670.The structure of other parts of the substrate board treatment of second embodiment is identical with the substrate board treatment of first embodiment.

Figure 13 is the longitudinal sectional view that expression is used in an in-built example of 2 fluid tips 950 in cleaning and the dried.From 2 fluid tips 950, the optionally fluid-mixing of gas jet, liquid and gas and liquid.

2 fluid tips 950 of present embodiment are called as external mix type.2 fluid tips 950 in the external mix type shown in Figure 13 are to be made of inside subject portion 311 and outer body portion 312.Inside subject portion 311 is made of for example quartz etc., and outer body portion 312 to be fluorine-type resins by for example PTFE (teflon) etc. constitute.

Central shaft along inside subject portion 311 is formed with liquid introduction part 311b cylindraceous.Cleaning treatment supply pipe 663 among Fig. 4 is installed on liquid introduction part 311b.Thus, be directed to liquid introduction part 311b by cleaning treatment with supply pipe 663 cleaning liquid supplied or washing fluid.

Be formed with the liquid ejection outlet 311a that is communicated to liquid introduction part 311b in the lower end of inside subject portion 311.Inside subject portion 311 is inserted in the outer body portion 312.In addition, the upper end of inside subject portion 311 and outer body portion 312 is bonded with each other together, and the lower end is not bonded together.

Between inside subject portion 311 and outer body portion 312, be formed with the gas communication 312b of portion cylindraceous.Externally the lower end of main part 312 is formed with the gas ejection ports 312a that is communicated to the 312b of gas communication portion.The dried supply pipe 674 of the Fig. 4 that is communicated to the 312b of gas communication portion externally is installed on the perisporium of main part 312.Thus, the inert gas of supplying with supply pipe 674 from dried is directed to the 312b of gas communication portion.

The 312b of gas communication portion is near gas ejection ports 312a, along with becoming littler near its diameter downwards.As a result, the flow velocity of inert gas is accelerated, and sprays from gas ejection ports 312a.

From fluid jet mouth 311a cleaning fluid that ejects and the inert gas that ejects from gas ejection ports 312a, mix mutually near the outside the lower end of 2 fluid tips 950, and generate the vaporific fluid-mixing of the fine droplets that contains cleaning fluid.

Figure 14 is the figure of the drying method of the substrate W when being used to illustrate 2 fluid tips 950 that use Figure 13.

At first, as shown in Figure 4, substrate W is rotated chuck 621 absorption and keeps, and is accompanied by the rotation of turning axle 625 and rotates.At this moment, the rotating speed of turning axle 625 for example is about 500rpm.

Under this state, shown in Figure 14 a, when the upper surface of substrate W sprayed the vaporific fluid-mixing of being made up of cleaning fluid and inert gas, 2 fluid tips 950 moved to the periphery top gradually from the central part top of substrate W from 2 fluid tips 950.Thus, all blow attached fluid-mixing to the surface of substrate W, carry out cleaning substrate W from 2 fluid tips 950.

Therefore the fine droplets that contains cleaning fluid from the fluid-mixing that 2 fluid tips 950 eject, even exist under the concavo-convex situation on the surface of substrate W, also can remove attached to the dirt in concavo-convex by the fine droplets of cleaning fluid.Thus, can remove the lip-deep dirt of substrate W really.Also have, under the situation that the film on the substrate W is difficult for soaking, also remove the dirt on substrate W surface, therefore can remove the lip-deep dirt of substrate W really by the fine droplets of cleaning fluid.

In addition, by regulating the flow of inert gas, can easily regulate the cleansing power when substrate W cleaned.Thus, have at the organic membrane on the substrate W (etchant resist and resist-protecting membrane) under the situation of characteristic of rapid wear, can prevent organic membrane breakage on the substrate W by weakening cleansing power.Also have, when the lip-deep dirt of substrate W is difficult for removing, can remove the dirt on substrate W surface really by strengthening cleansing power.So, by according to the characteristic of the organic membrane on the substrate W and the extent control cleansing power of dirt, when can prevent the breakage of the organic membrane on the substrate W, cleaning base plate W positively.

Then, shown in Figure 14 b, the supply of fluid-mixing is stopped, and when the rotating speed of turning axle 625 reduces, goes up jet douche liquid from 2 fluid tips 950 to substrate W.At this moment, the rotating speed of turning axle 625 for example is about 10rpm.Thus, form the liquid layer L of washing fluid on all on substrate W surface.In addition, also can stop the rotation axle 625 rotation and form liquid layer L on all on the surface of substrate W.Also have, when adopting pure water, also can not supply with washing fluid as the cleaning fluid in the fluid-mixing of cleaning base plate W.

After the L shaped one-tenth of liquid layer, the supply of washing fluid is stopped.Then, shown in Figure 14 c, spray inert gas to substrate W from 2 fluid tips 950.Thus, the cleaning fluid of the central part of substrate W moves to the periphery of substrate W, and becomes the state that only has liquid layer L at the periphery of substrate W.

Then, the rotating speed of turning axle 625 rises.At this moment, the rotating speed of turning axle 625 for example is about 100rpm.Thus, the liquid layer L of substrate W is applied very big centrifugal force, thereby can remove the liquid layer L on the substrate W.Its result, substrate W is dried.

In addition, when removing the liquid layer L on the substrate W, also can allow 2 fluid tips 950 direction periphery top from the central part of substrate W move gradually.Thus, can therefore can remove the liquid layer L on the substrate W really to all jet surface inert gases of substrate W.Its result can positively carry out drying to substrate W.

(2-2) other examples of the dried unit of 2 fluid tips of employing

In addition,, supply with washing fluid to substrate W, but also can use the nozzle of other setting to supply with washing fluid to substrate W by 2 fluid tips 950 in the situation of 2 fluid tips 950 that adopt Figure 13.

Also have,, during liquid layer L on removing substrate W, supply with inert gas by 2 fluid tips 950 to substrate W, but also can use the nozzle of other setting to supply with inert gas to substrate W in the situation of 2 fluid tips 950 that adopt Figure 13.

(2-3) effect of second embodiment

In the substrate board treatment 500 of second embodiment, in exposure device 15, substrate W is carried out after the exposure-processed, in dried portion 80, implement cleaning treatment substrate W.At this moment, after the exposure-processed attached to the water droplet residue on the substrate W and from the precipitate of the organic membrane on the substrate W etc., in dried cells D RY by being removed to the fluid-mixing that substrate W supplies with cleaning fluid and inert gas from 2 fluid tips 950.

The mixed gas that ejects from 2 fluid tips 950 contains the fine droplets of cleaning fluid, therefore, even have concavo-convex situation on the surface of substrate W, also can remove attached to the dirt in concavo-convex by the fine droplets of cleaning fluid.Thus, can remove the dirt on substrate W surface really.Also have, under the situation that the film on the substrate W is difficult for soaking, also remove the dirt on substrate W surface, therefore can remove the dirt on substrate W surface really by the fine droplets of cleaning fluid.As a result, can prevent because the processing of the substrate that the pollution of the substrate after the exposure-processed causes is bad.

In addition, by regulating the flow of inert gas, can easily regulate the cleansing power when substrate W cleaned.Thus, have at the organic membrane on the substrate W (etchant resist and epiphragma against corrosion) under the situation of characteristic of rapid wear, can prevent that the organic membrane on the substrate W is damaged by weakening cleansing power.Also have, when the dirt on substrate W surface is obstinate, can remove the dirt on substrate W surface really by strengthening cleansing power.So, regulate cleansing power, and when can prevent the breakage of the organic membrane on the substrate W, positively cleaning base plate W by degree according to the characteristic of the organic membrane on the substrate W and dirt.

Also have, among the dried cells D RY, substrate W is carried out after the cleaning treatment, carry out the dried of substrate W again.Thus, the cleaning fluid that supplies to substrate W is removed, therefore can prevent substrate W when dried portion 80 is transported to indexing attachment district 9 with treatment region 11 and antireflection film with treatment region 10 via interface area 14, dried district 13, development treatment district 12, etchant resist, to the substrate board treatment 500 inside cleaning fluid that drips.Its result can prevent that the action of unusual grade of electrical system of substrate board treatment 500 is bad.

Also have, in dried cells D RY, spray inert gas from the central part of substrate W to periphery on one side, come substrate W is carried out dried by one side rotary plate W.At this moment, can remove cleaning fluid and washing fluid on the substrate W really, therefore, can prevent really that dust etc. in the environment is attached on the substrate W after cleaning.Thus, when can prevent the pollution to substrate W really, can prevent from dried water spots to take place on the surface of substrate W.

Also have, owing to can prevent residual cleaning fluid and washing fluid on the substrate W after the cleaning really, therefore, can prevent really substrate W from dried cells D RY conveyance to the process of development treatment portion 70, the composition of resist is cleaned the dissolving of liquid and washing fluid and separates out.Thus, the exposing patterns that can prevent to be formed on the etchant resist is out of shape.Its result, the reduction of the live width precision in the time of preventing development treatment really.

These results can prevent really that the processing of substrate W is bad.

Also have, in second embodiment, adopt 2 fluid tips 950 of external mix type.Externally in 2 of mixed type fluid tips 950, fluid-mixing is to generate by external mix cleaning fluid and inert gas at 2 fluid tips 950.In the inside of 2 fluid tips 950, inert gas is distinguished into different streams separately with cleaning fluid and circulates.Thus, it is residual not have cleaning fluid in the 312b of gas communication portion, and inert gas is sprayed from 2 fluid tips 950 separately.And then, by supplying with washing fluid with supply pipe 663, washing fluid can be sprayed separately from 2 fluid tips 950 by cleaning treatment.Thereby, can be from 2 fluid tips 950 optionally jet mixing flow body, inert gas and washing fluid.

Also have, under the situation that adopts 2 fluid tips 950, do not need to be provided for separately respectively supplying with the nozzle and the nozzle that is used for supplying with inert gas of cleaning fluid or washing fluid to substrate W to substrate W.Thus, can carry out cleaning and drying really with simple structure to substrate W.

(3) each inscape of embodiment of the present invention and embodiment each several part is corresponding

In the present embodiment, antireflection film treatment region 10, etchant resist treatment region 11, development treatment district 12 and dried district 13 are equivalent to handling part, interface area 14 is equivalent to the junction, coating element RES is equivalent to first processing unit, etchant resist is equivalent to first with treatment region 11 and handles unit, dried cells D RY, DRYa is equivalent to second processing unit, dried district 13 is equivalent to second and handles unit, development treatment cells D EV is equivalent to the 3rd processing unit, development treatment district 12 is equivalent to the 3rd and handles unit, coating element BARC is equivalent to and manages the unit everywhere, antireflection film is equivalent to unit of managing everywhere with treatment region 10, and indexing attachment district 9 is equivalent to substrate and moves into the portion of taking out of.

In addition, heating unit HP and unit, cold-zone CP are equivalent to first～the 4th thermal treatment unit, the second central robot CR2 is equivalent to the first conveyance unit, the 4th central robot CR4 is equivalent to the second conveyance unit, the 3rd central robot CR3 is equivalent to the 3rd conveyance unit, the first central robot CR1 is equivalent to the 4th conveyance unit, the 5th central robot CR5 is equivalent to the 5th conveyance unit, interface is equivalent to the 6th conveyance unit with transport mechanism IFR, hand H5 is equivalent to first maintaining part, hand H6 is equivalent to second maintaining part, substrate loading part PASS11, PASS12 is equivalent to loading part.

Also have, rotary chuck 621 is equivalent to base plate keeping device, turning axle 625 and chuck rotary drive mechanism 636 are equivalent to rotating driving device, cleaning treatment is equivalent to cleaning solution supplying portion and washing fluid supply unit with nozzle 650, and dried is equivalent to the inert gas supply unit with nozzle 670,770,870.

In addition, 2 fluid tips 950 are equivalent to fluid tip, and liquid introduction part 311b is equivalent to liquid flow path, and the 312b of gas communication portion is equivalent to gas flow path.

Claims

1. a substrate board treatment disposes in the mode adjacent to exposure device, and this exposure device is by immersion method substrate to be carried out the exposure device of exposure-processed, it is characterized in that,

Have:

Handling part, it is used for substrate is handled,

The junction, its mode with the end that is adjacent to above-mentioned handling part is provided with, and is used for carrying out between above-mentioned handling part and above-mentioned exposure device the handing-over of substrate;

Above-mentioned handling part has:

First handles unit, first thermal treatment unit that it is included in first processing unit that forms the photosensitive film that is made of photosensitive material on the substrate, heat-treat substrate and the first conveyance unit of conveyance substrate,

Second handles unit, its comprise by above-mentioned exposure device implemented to carry out after the exposure-processed second processing unit of the dried of substrate, second thermal treatment unit that substrate is heat-treated and the second conveyance unit of conveyance substrate,

The 3rd handle unit, its comprise by above-mentioned second processing unit implemented after the dried to substrate carry out the 3rd processing unit of development treatment, the 3rd thermal treatment unit that substrate is heat-treated and the 3rd conveyance unit of conveyance substrate;

Above-mentioned second handles unit disposes in the mode that is adjacent to above-mentioned junction.

2. substrate board treatment as claimed in claim 1 is characterized in that, above-mentioned second processing unit comes substrate is carried out dried by supply with inert gas on substrate.

3. substrate board treatment as claimed in claim 1, it is characterized in that, above-mentioned handling part further has unit of managing everywhere, this everywhere the unit of managing comprise the 4th thermal treatment unit managing the unit everywhere, substrate is heat-treated and the 4th conveyance unit of conveyance substrate, above-mentioned managed the unit everywhere before forming above-mentioned photosensitive film by above-mentioned first processing unit, formed antireflection film on substrate.

4. substrate board treatment as claimed in claim 3 is characterized in that,

Further have substrate and move into the portion of taking out of, this substrate is moved into the portion of taking out of and is disposed in the mode of the other end of being adjacent to above-mentioned handling part, and this substrate moves into the portion of taking out of and be used for substrate being moved into above-mentioned handling part and substrate being taken out of from above-mentioned handling part,

Above-mentioned everywhere the unit of managing move into the mode of the portion of taking out of and dispose to be adjacent to aforesaid substrate.

5. substrate board treatment as claimed in claim 1 is characterized in that,

Above-mentioned junction comprises:

The 5th processing unit, it carries out predetermined process to substrate,

Loading part, it is used for temporary transient mounting substrate,

The 5th conveyance unit, it is used for conveyance substrate between above-mentioned handling part, above-mentioned the 5th processing unit and above-mentioned loading part,

The 6th conveyance unit, it is used for conveyance substrate between above-mentioned loading part, above-mentioned exposure device and above-mentioned second processing unit;

The substrate transferring that above-mentioned the 6th conveyance unit will be taken out of from above-mentioned exposure device is to above-mentioned second processing unit.

6. substrate board treatment as claimed in claim 5 is characterized in that,

Above-mentioned the 6th conveyance unit comprises first maintaining part and second maintaining part that keeps substrate,

Above-mentioned the 6th conveyance unit during to above-mentioned loading part, is keeping substrate by above-mentioned first maintaining part with substrate transferring from above-mentioned loading part with substrate transferring during to above-mentioned exposure device and from above-mentioned second processing unit,

During to above-mentioned second processing unit, keeping substrate from above-mentioned exposure device with substrate transferring by above-mentioned second maintaining part.

7. substrate board treatment as claimed in claim 6 is characterized in that above-mentioned second maintaining part is arranged on the below of above-mentioned first maintaining part.

8. substrate board treatment as claimed in claim 5 is characterized in that, above-mentioned the 5th processing unit comprises the edge exposure portion that the periphery to substrate exposes.

9. substrate board treatment as claimed in claim 1 is characterized in that, above-mentioned second processing unit further carries out the cleaning treatment to substrate before to the dried of substrate.

10. substrate board treatment as claimed in claim 9 is characterized in that,

Above-mentioned second processing unit has:

Base plate keeping device, its approximate horizontal ground keeps substrate,

Rotating driving device, it makes the substrate that kept by the aforesaid substrate holding device is that the center is rotated with the axle perpendicular to this substrate and the center by this substrate,

Cleaning solution supplying portion, its with cleaning solution supplying to the substrate that keeps by the aforesaid substrate holding device,

The inert gas supply unit, it supplies with inert gas on substrate after supplying with cleaning fluid by above-mentioned cleaning solution supplying portion on substrate.

11. substrate board treatment as claimed in claim 10, it is characterized in that, above-mentioned inert gas supply unit, thereby, supply with inert gas so that the cleaning fluid that is supplied on the substrate by above-mentioned cleaning solution supplying portion moves the mode that above-mentioned cleaning fluid is got rid of from substrate laterally from the central part on the substrate.

12. substrate board treatment as claimed in claim 10, it is characterized in that, above-mentioned second processing unit further has the washing fluid supply unit, this washing fluid supply unit is after supplying with cleaning fluid by above-mentioned cleaning solution supplying portion, and before supplying with inert gas, on substrate, supply with washing fluid by above-mentioned inert gas supply unit.

13. substrate board treatment as claimed in claim 12, it is characterized in that, above-mentioned inert gas supply unit, thereby, supply with inert gas so that the washing fluid that is supplied on the substrate by above-mentioned washing fluid supply unit moves the mode that above-mentioned washing fluid is got rid of from substrate laterally from the central part on the substrate.

14. a substrate board treatment disposes in the mode adjacent to exposure device, this exposure device is by immersion method substrate to be carried out the exposure device of exposure-processed, it is characterized in that,

Have:

Handling part, it is used for substrate is handled,

The junction, its mode with the end that is adjacent to above-mentioned handling part disposes, and is used for carrying out between above-mentioned handling part and above-mentioned exposure device the handing-over of substrate;

Above-mentioned handling part has:

Second handles unit, it comprises by above-mentioned exposure device has implemented after the exposure-processed, fluid tip by supplying with from the fluid-mixing comprise liquid and gas to substrate to substrate carry out second processing unit of cleaning treatment, second thermal treatment unit that substrate is heat-treated and the second conveyance unit of conveyance substrate

The 3rd handles unit, its comprise by above-mentioned second processing unit implemented after the cleaning treatment to substrate carry out the 3rd processing unit of development treatment, the 3rd thermal treatment unit that substrate is heat-treated and the 3rd conveyance unit of conveyance substrate;

15. substrate board treatment as claimed in claim 14 is characterized in that, above-mentioned second processing unit carries out cleaning treatment by supplying with the fluid-mixing that contains inert gas and cleaning fluid from above-mentioned fluid tip to substrate to substrate.

16. substrate board treatment as claimed in claim 14 is characterized in that, above-mentioned second processing unit after substrate is carried out cleaning treatment, and before above-mentioned the 3rd processing unit carries out development treatment to substrate, carries out dried to substrate.

17. substrate board treatment as claimed in claim 16 is characterized in that, above-mentioned second processing unit comprises the inert gas supply unit, and this inert gas supply unit comes substrate is carried out dried by supply with inert gas on substrate.

18. substrate board treatment as claimed in claim 17 is characterized in that, above-mentioned fluid tip is as above-mentioned inert gas supply unit performance function.

19. substrate board treatment as claimed in claim 17 is characterized in that, above-mentioned second processing unit further comprises:

Base plate keeping device, its approximate horizontal ground keeps substrate,

Rotating driving device, it makes the substrate that kept by the aforesaid substrate holding device is that the center is rotated with the axle perpendicular to this substrate and the center by this substrate.

20. substrate board treatment as claimed in claim 17, it is characterized in that, above-mentioned second processing unit, thus so that the fluid-mixing that supplies on the substrate from above-mentioned fluid tip moves the mode that above-mentioned fluid-mixing is got rid of from substrate laterally from the central part on the substrate, supply with inert gas.

21. substrate board treatment as claimed in claim 17, it is characterized in that, above-mentioned second processing unit further comprises the washing fluid supply unit, this washing fluid supply unit is after above-mentioned fluid tip is supplied with fluid-mixing, and before supplying with above-mentioned inert gas, on substrate, supply with washing fluid by above-mentioned inert gas supply unit.

22. substrate board treatment as claimed in claim 21 is characterized in that, above-mentioned fluid tip is as above-mentioned washing fluid supply unit performance function.

23. substrate board treatment as claimed in claim 21, it is characterized in that, above-mentioned second processing unit, thus so that the washing fluid that is supplied on the substrate by above-mentioned washing fluid supply unit moves the mode that above-mentioned washing fluid is got rid of from substrate laterally from the central part on the substrate, supply with inert gas.

24. substrate board treatment as claimed in claim 14 is characterized in that, above-mentioned fluid tip has: the liquid flow path of circulating liquid,

The gas flow path of circulated gases,

Be communicated with the also liquid ejection outlet of opening with the aforesaid liquid stream, and

Gas ejection ports, its be arranged on the aforesaid liquid injection orifice near, is communicated with simultaneously also opening with the above-mentioned gas stream.