CN100530523C - Method for tailoring temperature uniformity - Google Patents
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- CN100530523C CN100530523C CNB2004800315400A CN200480031540A CN100530523C CN 100530523 C CN100530523 C CN 100530523C CN B2004800315400 A CNB2004800315400 A CN B2004800315400A CN 200480031540 A CN200480031540 A CN 200480031540A CN 100530523 C CN100530523 C CN 100530523C
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000012546 transfer Methods 0.000 claims abstract description 24
- 230000008859 change Effects 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 13
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 70
- 239000000463 material Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 18
- 238000009826 distribution Methods 0.000 description 15
- 238000000576 coating method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004035 construction material Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010033307 Overweight Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000020825 overweight Nutrition 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Abstract
Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
Description
Technical field
The invention relates to the field of semiconductor processes, more particularly, relevant for the thermal anneal process in the semiconductor device manufacturing.
Background technology
Fast Heating processing procedure (RTP) is a kind of when wafer is made, the processing of annealed wafer.In this handled, thermal radiation was used to the wafer of Fast Heating in controling environment to the maximum temperature that surpasses more than chamber temperature 900 degree.Depend on processing procedure and decide that this maximum temperature is by a lasting special time, scope by 1 second to a few minutes.Wafer is cooled then and gets back to the chamber temperature, is for further processing.High intensity tungsten or Halogen lamp LED are often used as and are infrared source.Wafer conduction is coupled to the crystal cup that is heated extra heat energy is provided.
Manufacture of semiconductor has several RTP to use.These application comprise thermal oxidation (wafer is heated in the combination atmosphere of oxygen or oxygen and hydrogen, and makes the silicon substrate oxidation, to form silicon dioxide); The equal thermal annealing of high temperature (gas with various mixture, for example nitrogen, ammonia or oxygen are used); The equal thermal annealing of low temperature (typical anneal deposits the wafer of metal); And spike anneal (being mainly used in wafer need be exposed in the processing of high temperature by very short time).In spike anneal, wafer is rapidly heated to be enough to activate the maximum temperature of an alloy and cooled off to stop activation procedure before the alloy substantial diffusion fast.
The method and apparatus that is used for spike anneal is to be described in the U.S. patent application case 2003/0183611 that is disclosed on October 2nd, 2003, and the announcement of this case is to be incorporated herein by reference.In a spike anneal, wafer is by to heat from the thermal radiation of lamp array.Typically, wafer is heated to by the climbing speed with 250 ℃ of per seconds and exceeds 1000 ℃ temperature.Wafer uses the inert gas group of helium for example by conduction coupling thermal bimorph to cold emission device plate then and is cooled off.This forces cooling to facilitate cooldown rate faster, has finished the fall off rate that arrives 80 ℃ of per seconds.
The essence even temperature that the purpose of spike anneal is typically on entire wafer distributes.This is that with the even heated chip in the front side, simultaneously, the reflecting surface on wafer backside is got back to wafer with heat reflection equably by lamp or other thermals source of control an array.Emissivity measurement and penalty method have been used to improve the uniform temperature gradient on entire wafer.Yet the even control of spike anneal chamber is frequent and fail to provide the essence uniform temperature on the entire wafer diameter to distribute, because be not in all operations state, the chamber element is start equably all.Therefore, still having needs apparatus and method for, is used for improveing the uniformity.
Summary of the invention
Generally speaking, embodiments of the invention are included in the chamber that contains the microprocessor processing procedure, obtain the method and apparatus of the heat transfer profile of correction, comprise: the heat transfer characteristic of estimating this chamber; Estimate the heat absorption characteristic of wafer; Adjust the physical features in this chamber, to proofread and correct this heat transfer characteristic; And utilize this chamber, to make microprocessor.
Description of drawings
Fig. 1 is the vertical cross section according to the RTP system some of the embodiment of the invention;
Fig. 2 is the profile of an edge ring design implementation example;
Three profiles that change example that Fig. 3 A-3C designs for edge ring;
Fig. 4 is the functional arrangement of wafer front side emissivity for wafer edge temperature range; And
Fig. 5 is the functional arrangement of wafer radius for wafer radial temperature scanning.
The explanation of element conventional letter
14 delivering position 16UV lamps
20 edge ring, 21 stators
22 reflectings surface, 23 actuators
25 pyrometers, 26 pyrometers
27 pyrometers, 28 controllers
30 slit valve, 200 pars
201 lips, 301 lips
302 pars, 303 lips
304 pars, 305 lips
306 pars
Embodiment
Feature of the present invention can detail knowledge, more than the certain illustrated of the present invention summed up can be finished by reference example.It should be noted that therefore accompanying drawing illustration exemplary embodiments of the present invention, should not be considered to the restriction of the scope of the invention, because the present invention can adopt other equivalent embodiment.
One suites of measure is used to set up has the rtp chamber that temperature controllable distributes, and it can transmit inhomogeneous in order to the heat of compensation in this chamber.Moreover a uneven temperature gradient can provide downstream or upstream processing procedure, proofreaies and correct the imperfect of electric, thickness, chemical or crystallization in base material.For example, a uneven temperature gradient can be corrected, and the siliceous film deposition of improvement is provided and provides with the front side emissivity of compensation individual wafer.
Fig. 1 shows a base material 12 is how to be supported in the modification rtp chamber 10 with an array UV lamp 16.Base material 12 preferable being parked on the following edge ring that describes in detail 20.The measuring value that one controller 28 receives from pyrometer 25,26 and 27 with the following UV lamp 16 that outputs control signals to with being described in detail.
Reflecting surface 22 under the base material 12 has the opening that is used for flushing gas pipeline and inductor (not shown).The position of opening and the flow rate of flushing gas be framework in addition, to finish the Temperature Distribution control of base material.
Though reflecting surface 22 can be designed as and is rotated,, then provide extra control to the wafer unevenness if reflecting surface 22 is not rotated as shown.One fixed reflection surface 22 has been finished localized gas jet cooling and lamp adjustment.
Perhaps, base material 12 can be by 23 magnetic rotations of the actuator of a rotatable stator 21.Actuator 23 to stator 21 and suitable with the height of change stator 21 and/or with respect to central shaft, is adjusted the angular orientation of stator 21 by magnetic coupling.First height of stator 21 is placed a delivering position 14 with base material 12, in order to remove base material via slit valve 30.Placed new base material by stator 21 then, make spike anneal.
Reflecting surface 22 can be modified, and with opening and distribution inlet and the outlet by utilizing pyrometer 25,26 and 27, comes the temperature capability for correcting in improved treatment chamber.Because wafer can't be got back to energy reflection in the hole, so, gas is penetrated through the hole (not shown) assistance acceleration cooling in reflecting surface 22.The design in the hole of correction in reflector panel can provide another mechanism of facilitating heat to transmit.
Edge ring 20 is supported in base material 12 in the rtp chamber.Fig. 2 shows one of edge ring 20 embodiment, and it has a lip 201 and a par 200.The thickness of lip 201 and par 200 can be relative to each other or be relevant to wafer thickness and changed.
Fig. 3 shows three kinds of designs with lip and flat thicknesses different proportion.For example, it is little ratio that 301 pairs of pars 302 of lip have than 301 pairs of pars of lip 304, but there is a similar ratio 305 pairs of pars 306 of lip.In embodiment shown in Figure 2, base material thickness is preferably between in 1.14 to 1.30 the ratio of ring thickness.
Fig. 4 is provided for having the various edge ring of different thermal masses and the wafer edge temperature range of the various wafers with different emissivity.Therefore, the thermal mass that changes edge ring can cause the wafer edge temperature profile of wanting.The appearance of coating may make the heat transfer characteristic distortion (distortion) of process chamber.Revise a kind of mode of edge ring for this distortion of compensation.Lowest curve in the figure is the data that produce according to legacy system.Two higher curves are for using the data that system produced of different lips and flat thicknesses.
The radial temperature scan of Fig. 5 shows wafer becomes the result of the function of wafer radius.This test is to be executed in about 1000 ℃.The data that are used for two different emissivity surfaces are to be collected.On the radius of entire wafer, low front side emissivity mask has higher and more constant radial temperature scan.
In operation, can be individually or together or each compound mode, use following apparatus and method for in rtp chamber, the uneven temperature distribution that foundation is wanted.
Before handling in rtp chamber, a base material can be at some feature, and for example emissivity or stack thickness are measured.The emissivity of system can directly measure or be estimated according to stack thickness.The direct measurement of emissivity can increase the accuracy of bucking-out system.Measure emissivity several selections are arranged.Can use the internal high temperature meter of position in the chamber, to obtain the accurate temperature of chamber environment.The internal high temperature meter can use the different passages of feedbacking.One of two passages for directly collecting incident heat energy by wafer, and another passage be the combination from chamber environment or chamber environment and wafer, collection incident heat energy.Also can use an external reflection rate meter, with the measurement reflectivity, and, the emissivity of wafer.The internal backside emissivity in chamber also can be in order to estimate the front side emissivity of wafer.In order to estimate front side emissivity, a sacrificial wafer can be handled to put upside down mode up and down.Can be processed with the wafer that sacrificial wafer is almost made simultaneously, be used as them and have the same transmit rate.That is, be assumed to, can have the same transmit rate with wafer a collection of or that once make together in same a group.
The result of emissivity method of testing can feed-in one controller, other processing parameters that are used for rtp chamber, and this process chamber can be adjusted, obtaining the non-homogeneous Temperature Distribution of wanting, will compensate in the chamber or the wafer temperature profile of the change of chip design and optimization one particular wafer.
The edge ring design
Following empirical equation modelling about at the edge of base material and the heat matter at center and the pass of emissivity be.
T
maer＝ε
er/ε
w*t
maw/R
Wherein,
T
MaerEvery area thermal mass towards lamp of=edge ring
t
MawEvery area thermal mass towards lamp of=base material
ε
ErThe emissivity of=edge ring
ε
w=substrate surface is to the emissivity of a side of lamp
The R=optimal proportion, for example, for the edge ring of the ring shown in 3A-3C figure, the 200mm diameter substrate system is～1.13, and, be～1.15 for the 300mm diameter substrate system.
The thermal mass of every area is that the whole quality of an element multiply by the mean heat capacity that surface area removed towards lamp.The unit of thermal mass is J/K/m
2Thermal capacity is generally wants annealing range, for example 550 ℃ to 1100 ℃ average.Empirical equation thus, when the characteristic of base material when being known, the best design parameter of ring can be calculated.
For example, for edge ring that is designed for 300mm base material and thermal mass 1715J/K/m towards lamp with minimum edge temperature gradient with 0.95 emissivity
2Zone, edge ring are the Zirconia/silicon carbide with 0.94 emissivity, and the optimal proportion that is used for the 300mm substrate system is 1.15, and the thermal mass towards every area of lamp that is used for edge ring is 1476J/K/m
2
1. the change of edge ring thermal mass
In an embodiment, the Temperature Distribution of base material is the low-density edge ring of being produced by isostatic pressing and sintered silicon carbon by using, and for example handles the person of buying of company by Bridgestone flame-spraying and is changed.For improved thermal stability, edge ring can pre-oxidation.Simultaneously, the thickness that changes the ring on the ring radius causes the non-uniform resistive rate, with compensated cavity and substrate variations.For example, the thin part of low-density edge ring has very fast heat transmission.Therefore, edge ring may not need a coating with the controlling resistance rate, yet various coatings can be employed, with the resistivity of the whole edge ring of further control.
2. the change of edge ring absorptivity
Show that from above-mentioned same equation thermal capacity and radiation profiles may influence the coating that is used for this edge ring and the selection of construction material.When the emissivity variation of edge ring, other elements of this formula may be influenced.
A. construction material
Previous edge ring is used the CVD growth carbide with silicon coating, serves as logical to cause edge ring to infrared inductor.We more want to use the low-density edge ring that comprises a nitrogenous compacting sintering carborundum, to avoid when encircling not the reflection cavity heat topic of corresponding thoroughly that may cause.The porous edge ring is that the mixing by sintered silicon carbon powder and nonmetal assisted sintering agent in the flame-spraying program is obtained.Because density is more even, so this material can provide more even heat to transmit; The nitrogen of being escaped from by this material is lower to the processing procedure injury by the gas that carbide is escaped from, and light transmittance is wanted.
B. coating
Coating can be used on the edge ring, to be modified at the temperature gradient in the chamber.Add nitride or equadag coating and can increase emissivity.For example other coatings of polysilicon also can be in order to increase reflectivity, to increase the cooling in the chamber.The varied in thickness of coating also can influence the edge ring reflectivity.If base material does not rotate, then coating also can influence the heat transfer profile in chamber.
Introducing is towards many gas blowings of edge ring or wafer
The flushing gas that is thrown on wafer or the edge ring sprays the cooling effect that can produce the part.The essence of quantity of spraying and position, gas, and gas velocity can adjust the amount and the scope of cooling.If want, the speed of each injection and composition can be planned individually.Changing radial gas flows and constituent can increase the gradient of temperature.
The local variation of reflector panel reflectivity
Can apply reflecting surface 22 by selectively with aluminium, aluminium oxide or other materials, with the control of improvement to wafer temperature profile.With the hole that is cut into reflector or other shapes or by tape or bolt are added on the reflector panel, the surface area that changes reflecting surface 22 also can be in order to revise Temperature Distribution.Moreover, reflector panel is bubbled or the geometric ways of reflector panel pcketing also can be used separately or cooperate coating to use together, with further improvement wafer temperature profile.
The use of offset temperatures to use lamp control system, is carried out radial symmetry gradient
Usually, UV lamp 16 and reflector 22 are designed to produce relative uniform irradiation on wafer.This irradiation distributes and can adjust arbitrarily in the mode that changes offset temperatures with the radial symmetric design.We want lamp is placed the center that offsets with the preferable convection current in order to heat distribution and wafer cooling.Simultaneously, can have the corresponding lamp position that is made of the higher-wattage lamp in the wafer radial position of wanting higher temperature, and contiguous colder position can be made of lower power lamps, in the part position, lamp can be removed.Increase temperature gradients at needs, in reflex time, the reflector that produces than narrow beam of light can be in order to reduce the radiation of being scattered to another controlled area by a controlled area.
This chamber also can be processed, to see through some lamp or lamp that some is regional, disperses other power.This extra power also can be in order to revise the Temperature Distribution on wafer.If wafer is by around lamp holder rotation, then these processing temperatures distribute and can be mainly be made of the non-homogeneous Temperature Distribution along the radius of wafer.Want radial position heterogeneous can make the power of corresponding lamp as increase and decrease with wanting.Change the lamp parameter can in order to compensation by different emissivity wafers caused on poor of lip temperature scope.
Introduce the part of different lamp reflectors
Reflector also can arrange to be hexagon in conditionity ground, to reflex to a rotation wafer equably.Simultaneously, the center lamp of lamp bank with at thereafter other lamps does not have identical reflector pattern, because spatial limitation is.
The diffuse optical part is the central bulb that possible have coated or sandblast.Other zones can be by using the advantage of diffuse optical part, to be controlled at the direct irradiation on the wafer.That is, may want to add the border that overweights between base material and edge ring.The method of revising bulb and reflector system also can comprise the coil of revising bulb or push away pulls out angle.
The local variation of wafer-reflector plate separation
The local variation of wafer-reflector plate separation helps adjusting the conduction cooling mechanism.By changing wafer-reflector plate separation, can improve black body effect.The improvement black body effect also can improve measuring temp.The angle is watched in adjustment, and the angle that gas enters reflector panel also can improve cooling.
The local variation of the pyroconductivity of the media between wafer and reflector panel
The pyroconductivity that changes the media between wafer and reflector panel also can assist to revise the Temperature Distribution in the chamber.Gas vent position in this zone also can be changed.Specific gas flow rate also can change.Simultaneously, the conductivity of gas also can be improved by selecting gas according to its conductivity and molecular weight.In addition, the concentration of gas with various also can be in order to improvement cooling control.For example, may want in the different parts of reflecting surface, 100% Xe is arranged; 50% Xe; And 50% He; And 100% He outlet.At last, outlet and inlet port also can the corrects for nonuniform gas distributes.
On edge ring, dispose protrusion, to strengthen flow-disturbing
The configuration protrusion is strengthened the Temperature Distribution that flow-disturbing also can assist to revise the chamber on edge ring.
In addition, also can use the mode of a base material of indivedual base materials, compensate the change that distributes in the base material front side emissivity.That is, the emissivity of individual device wafer also can be in order to be set in the temperature change of wanting of whole base material, to proofread and correct the undesired change in the emissivity of indivedual base materials.
One non-homogeneous Temperature Distribution also can be in order to aid in exploitation different device or product type on the particular wafer.Other features of Processor's speed and gained device depend on when spike anneal, the temperature that this specific device is seen and the duration of high temperature exposure.Distribute by processing temperature, the zones of different on wafer also can obtain the different device of different disposal motor speed.
Wafer edge temperature range is the function that is changed to the ratio of the wafer heat transfer rate that is used for edge ring heat transfer rate and 300mm wafer, and the result is drawn.Wafer edge temperature range be near Waffer edge a bit and wafer diameter near the temperature difference between the measuring temp value.Two correlation lines are depicted as, with the correlation and the accuracy of data estimator.Be used for the formula that similar radially-arranged formula is used for different flat thickness distribution lower correlation factor is arranged.That is, the model that is used for different flat thickness distribution is similar radial distribution model for accurately.Therefore, change the ratio that the edge ring thermal mass also can change heat transfer rate.
How test is changed to the function of ratio of edge ring heet transfer rate and the wafer heet transfer rate that is used for the 200mm wafer with the decision wafer edge temperature.Because compared to the wafer heet transfer rate, the edge ring heat rate increases, so wafer edge temperature range is along with doing linear increasing greater than 95% correlation.This expression heat transfer process can be revised by selecting the edge ring heat transfer characteristic.
Though aforementionedly relate to preferred aspect of the present invention, other and further aspect of the present invention can be found out not breaking away from its base region, and the application's scope is determined by following claim.
Claims (5)
1. in the chamber that contains the microprocessor processing procedure, obtain the method for revising heat transfer profile for one kind, it is characterized in that, comprise following steps:
Estimate the heat transfer characteristic in this chamber;
Use a sacrificial wafer that turns upside down processing to estimate the heat absorption characteristic of wafer;
Adjust the physical features in this chamber, to proofread and correct this heat transfer characteristic, wherein above-mentioned heat transfer characteristic is also adjusted in the configuration of a reflecting surface opening by changing; And
Utilize this chamber, to make microprocessor.
2. the method for claim 1 is characterized in that, above-mentioned heat transfer characteristic is adjusted by the thermal mass that changes the edge ring that supports a wafer.
3. the method for claim 1 is characterized in that, above-mentioned heat transfer characteristic is adjusted by utilizing an edge ring, and this edge ring comprises a nitrogenous pressurized sintered silicon carbon.
4. the method for claim 1 is characterized in that, above-mentioned heat transfer characteristic is adjusted by utilizing an edge ring, and wherein the edge ring thickness of this edge ring is 1.14 to 1.30 to the ratio of wafer thickness.
5. the method for claim 1 is characterized in that, above-mentioned heat transfer characteristic is adjusted by the power that change is supplied to the lamp in this chamber.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US51503703P | 2003-10-27 | 2003-10-27 | |
| US60/515,037 | 2003-10-27 | ||
| US10/950,145 | 2004-09-24 |
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| Publication Number | Publication Date |
|---|---|
| CN1871688A CN1871688A (en) | 2006-11-29 |
| CN100530523C true CN100530523C (en) | 2009-08-19 |
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| CNB2004800315400A Expired - Fee Related CN100530523C (en) | 2003-10-27 | 2004-10-20 | Method for tailoring temperature uniformity |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6188044B1 (en) * | 1998-04-27 | 2001-02-13 | Cvc Products, Inc. | High-performance energy transfer system and method for thermal processing applications |
| US6215106B1 (en) * | 1997-06-30 | 2001-04-10 | Applied Materials, Inc. | Thermally processing a substrate |
| CN1430789A (en) * | 2000-04-17 | 2003-07-16 | Sr 詹姆斯·J·梅泽 | Method and apparatus for thermally processing wafers |
-
2004
- 2004-10-20 CN CNB2004800315400A patent/CN100530523C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6215106B1 (en) * | 1997-06-30 | 2001-04-10 | Applied Materials, Inc. | Thermally processing a substrate |
| US6188044B1 (en) * | 1998-04-27 | 2001-02-13 | Cvc Products, Inc. | High-performance energy transfer system and method for thermal processing applications |
| CN1430789A (en) * | 2000-04-17 | 2003-07-16 | Sr 詹姆斯·J·梅泽 | Method and apparatus for thermally processing wafers |
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| Publication number | Publication date |
|---|---|
| CN1871688A (en) | 2006-11-29 |
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