CN100527465C - Organic LED based on anode modification - Google Patents
Organic LED based on anode modification Download PDFInfo
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- CN100527465C CN100527465C CNB200510126485XA CN200510126485A CN100527465C CN 100527465 C CN100527465 C CN 100527465C CN B200510126485X A CNB200510126485X A CN B200510126485XA CN 200510126485 A CN200510126485 A CN 200510126485A CN 100527465 C CN100527465 C CN 100527465C
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- organic light
- light emitting
- emitting diode
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Abstract
The invention is concerned with the organic light emitter diode based on anode decoration, it is: deposits forced electronic molecular layer formed by hexadeca fluoro copper phthalocyanine on the indium tin oxide anode of the organic light emitter diode in order to forming the full dipole layer, constructs each function layer of the organic light emitter diode respectively on the forced electronic molecular layer, at least one of the function layer is with organic film and cathode. The invention is low cast, high light effect and lower operating voltage. The invention is also concerned with the decoration method of the organic light emitter diode based on anode decoration, that is simple operation, can use for several parts structure and with high light-admitting quality especially for blue and green light.
Description
Technical field
The present invention relates to the led technology field, particularly a kind of novel anode modification method, and the organic LED structure of a kind of high efficiency, low operating voltage.
Background technology
Since Kodak (Tang, C.W.; Vanslyke, S.A.Appl.Phys.Lett.1987,51,913.) and univ cambridge uk (Burroughs, J.H.; Jones, H.Nature1990,335,137.) to have invented since organic efficiently and the polymer electroluminescent device, Organic Light Emitting Diode has all been obtained significant progress at aspects such as performance and industrialization.High efficiency, low operating voltage are the targets that people pursue always, people realize this purpose by the whole bag of tricks such as synthetic and device architectures at present, wherein the electrode modification of device is very important part, because it can significantly reduce operating voltage and improve luminous efficiency under the situation that does not change material.By discovering, the anode of organic light emission and hole exist big injection barrier (1:Sugiyama, K.; Ishii, H.; Ouchi, Y.; Seki, K.J.Appl.Phys.2000,87,295.2:Kim, K.S.; Granstr
M, M.; Friend, R.H.; Johansson, N.; Salaneck, W.R.; Daik, R.; Feast, W.J.; Cacialli, F.J.Appl.Phys, 1998,84,6859), thereby be unfavorable for the injection in hole and the reduction of operating voltage.And luminous cut-in voltage is obviously reduced and the raising of luminescent properties by suitable modification.
On anode, introduce organic material (1:Carter, the S.A. of energy level and tin indium oxide (ITO) coupling; Angelopoulos, M.; Karg, S.; Brock, P.J.; Scott, J.C.Appl.Phys.Lett.1997,70,2067.2:Kim, W.H.;
, A.J.; Nikolov, N.; Shashidhar, R.; Kim.H.; Kafafi, Z.H.Appl.Phys.Lett.2002,80 3844.3:Van Slyke, S.A.; Chen, C.H.; Tang, C.W.Appl.Phys.Lett.1996,69,2160.), can strengthen the injectability in hole, thereby reduce cut-in voltage and strengthen luminous efficiency to a certain extent.But this method requires thicker film, thereby brings higher cost, and influences the light transmission of anode.In hole transmission layer, introduce functional group, or the assembling function molecular layer also can reach effect (1:Hanson, E.L. that enhancing is injected in the hole; Guo, J.; Koch, N.; Schwartz, J.; Bernasek, S.L.J.Am.Chem.Soc.2005,127,10058.2:Kato, S.J.Am.Chem.Soc.2005,127,11538.3:Huang, Q.L.; Evmenenko, G.A.; Dutta, P.; Lee, P.; Armstrong, N.R.; Marks, T.J.J.Am.Chem.Soc.2005,127,10227.), and the problem that can not bring light transmittance to reduce, but this has increased the synthetic difficulty of material.
Summary of the invention
The object of the present invention is to provide a kind of method of novel Organic Light Emitting Diode anode modification.
Another purpose of the present invention is to provide a kind of novel high-luminous-efficiency based on anode modification, the organic LED structure of low operating voltage.
For achieving the above object, technical solution of the present invention provides a kind of Organic Light Emitting Diode based on anode modification, comprises substrate, anode, organic layer, negative electrode; It is on the indium-tin oxide anode of Organic Light Emitting Diode, and deposition is haled the electronic molecules layer, forms complete dipole layer, is haling on the electronic molecules layer each functional layer that order is constructed Organic Light Emitting Diode respectively: one deck organic membrane and negative electrode at least again.
Described Organic Light Emitting Diode, its described substrate is that one of them is made by glass, pottery, polymer.
Described Organic Light Emitting Diode, its described electronic molecules of haling is ten hexafluoro CuPcs.
Described Organic Light Emitting Diode, its described organic film material is 3-(8-oxyquinoline) aluminium, 4,4-2[N-(1-naphthalene)-N-aniline] two benzene and 2,9-dimethyl-4,7-diphenyl-1,10-ferrosin one of them, or their combination.
Described Organic Light Emitting Diode, its described negative electrode is to be made by the lower material of work function, is a kind of metal or multiple metal alloy.
Described Organic Light Emitting Diode, its described metal or multiple metal alloy are the alloy of calcium, magnesium, silver, aluminium or their compositions.
The preparation method of described Organic Light Emitting Diode may further comprise the steps:
The first step, the cleaning of indium-tin oxide anode:
The indium oxide tin glass that etching is good cleaned 〉=10 minutes with washing agent, high purity water, ethanol, acetone and chloroform respectively, then oven dry after washing with running water;
Second step, the modification of indium-tin oxide anode:
Indium oxide tin glass sheet after the oven dry is placed in the vacuum chamber, under vacuum condition, at the uniform velocity to deposit ten hexafluoro CuPcs of 1 ~ 15 nanometer (nm) thickness;
The 3rd step, the evaporation organic film:
Indium oxide tin glass sheet after modifying is placed in the vacuum chamber, under vacuum condition, at the uniform velocity to deposit the organic film of one deck at least;
The 4th step, the negative electrode preparation:
With the 3rd step obtained device, under vacuum condition, evaporation negative electrode, thickness are 50～200nm, promptly obtain the organic light emitting diode device of anode modification;
The 5th step, device detection:
With the organic light emitting diode device of gained anode modification, after under atmospheric environment, testing under the room temperature, get finished product.
The preparation method of described Organic Light Emitting Diode, its described vacuum condition is 4 * 10
-4Under the vacuum condition of Pa; At the uniform velocity deposition is with 2
The speed deposition of/s.
The preparation method of described Organic Light Emitting Diode, its described organic film is individual layer, bilayer and multilayer; When individual layer, be 3-(8-oxyquinoline) aluminium lamination, deposit thickness is 40～150nm; When bilayer, be 3-(8-oxyquinoline) aluminium lamination and 4,4-2[N-(1-naphthalene)-N-aniline] two benzene layers, the thickness of two-layer deposition is 40～150nm; When multilayer, be 3-(8-oxyquinoline) aluminium lamination, 4,4-2[N-(1-naphthalene)-N-aniline] combination of two benzene layers and 2,9-dimethyl-4,7-diphenyl-1,10-ferrosin layer, the thickness of multilayer deposition is 40～150nm.
The preparation method of described Organic Light Emitting Diode, its described individual layer, bilayer and multilayer organic membrane all are under vacuum condition, at the following upper surface of one deck organic membrane, with vapor deposition last layer organic film at the uniform velocity.
The present invention has following characteristics and advantage
1. the present invention discloses for the first time by introduce ten hexafluoro CuPcs at the anode of Organic Light Emitting Diode and has modified, and reduces cut-in voltage, raises the efficiency.
2. anode modification method disclosed by the invention is compared with other anode modification methods, and simple to operate, cost is low.
3. the electrode after method disclosed by the invention is modified can be used for multiple device architecture, has high light transmittance, for blue green light anti-reflection effect is arranged.
4. multilayer organic LED structure disclosed by the invention has high-luminous-efficiency and lower operating voltage simultaneously.
Description of drawings
Fig. 1 is a light-emitting diode organic material molecular formula of the present invention;
Fig. 2 individual layer, bilayer, multilayer luminescent device structural representation, wherein, Fig. 2 (a) is an individual layer organic layer structure devices, and Fig. 2 (b) is double-deck organic layer structure devices, Fig. 2 (c) is one of multilayer organic layer structure devices, and Fig. 2 (d) is two of a multilayer organic layer structure devices;
Fig. 3 is light transmittance before and after the Organic Light Emitting Diode anode modification of the present invention;
Fig. 4 (a) is the current density-voltage of single layer structure Organic Light Emitting Diode of the present invention; Fig. 4 (b) is the brightness-voltage of single layer structure Organic Light Emitting Diode of the present invention; Fig. 4 (c) is the efficient of single layer structure Organic Light Emitting Diode of the present invention-current density curve chart;
Fig. 5 (a) is the current density-voltage of double-decker Organic Light Emitting Diode of the present invention; Fig. 5 (b) is the brightness-voltage of double-decker Organic Light Emitting Diode of the present invention; Fig. 5 (c) is the efficient of double-decker Organic Light Emitting Diode of the present invention-current density curve chart;
Fig. 6 (a), Fig. 6 (b), Fig. 6 (c) and Fig. 6 (d) they are ITO and the ITO/4 before and after the anode modification, 4-2[N-(1-naphthalene)-N-aniline] the surface atom force microscope figure of two benzene (NPB).
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples, but the present invention is not limited to this example.
Embodiment 1:
Shown in Figure 1 is the molecular formula that is used to prepare organic material of the present invention, is respectively strong electrophilic molecule ten hexafluoro CuPc (F
16CuPc), electron transport material and luminescent material 3-(8-oxyquinoline) aluminium (Alq
3), hole mobile material 4,4-2[N-(1-naphthalene)-N-aniline] two benzene (NPB) and hole barrier materials 2,9-dimethyl-4,7-diphenyl-1,10-ferrosin (BCP).
A kind of organic LED structure of the present invention comprises a substrate, transparent bottom electrodes tin indium oxide (ITO), organic layer and negative electrode successively.Wherein substrate can be made by following material: glass, pottery, polymer etc.Organic layer can be individual layer, bilayer and multilayer.Negative electrode is used for the injection of electronics, and this electrode is made by the lower material of work function.Can be a kind of metal or multiple metal alloy, as calcium, magnesium, silver, aluminium etc.
(Fig. 2 preparation method a) is illustrated, but the present invention is not limited thereto to the single layer device among the present invention for example below.
The first step, the cleaning of ito anode:
The ito glass that etching is good cleaned 10 minutes with washing agent, high purity water, ethanol, acetone and chloroform respectively, then oven dry after washing with running water.
Second step, the modification of ITO:
Ito glass sheet after the oven dry is placed in the vacuum chamber, 4 * 10
-4Under the vacuum condition of Pa, with 2
The speed of/s deposits ten hexafluoro CuPc (F
16CuPc), thickness is respectively 2nm, 4nm, 6nm, 8nm.The light transmittance of modified ito anode has high transmission rate at visible region as shown in Figure 3, and to be 420nm at wavelength have anti-reflection effect to the blue rate light of 520nm.
The 3rd step, the evaporation organic layer:
To modify back ito glass sheet and place in the vacuum chamber, 4 * 10
-4Under the vacuum condition of Pa, with 2
The speed of/s deposition carrier transport luminescent layer the Alq that holds concurrently
3, thickness is 100nm.
The 4th step, the negative electrode preparation:
With above component vacuum evaporation LiF (0.5nm)/Al negative electrode, gross thickness is 100nm.
The 5th step, device detection:
To test the ten hexafluoro CuPc (F of 6nm under the above-mentioned device room temperature
16CuPc) effect is the most obvious, and high-luminous-efficiency is 2.37cd/A, and maximum brightness is 4581cd/m
2
Fig. 4 is current density-voltage, brightness-voltage and the efficient-current density curve chart of the single organic layer structure of the present invention Organic Light Emitting Diode.
Embodiment 2:
Press the method preparation of embodiment 1, unique different be that organic layer is double-decker (NPB/Alq
3) (shown in Fig. 2 b), two-layer being is 50nm.(brightness reaches 1cd/m to have obtained low turn-on voltage
2Voltage) Organic Light Emitting Diode, minimum cut-in voltage is 2.53V, reaches 100cd/m
2The voltage minimum be 3.9V.
Fig. 5 is current density-voltage, brightness-voltage and the efficient-current density curve chart of the two organic layer structure Organic Light Emitting Diodes of the present invention.
Fig. 6 is ITO and the ITO/4 before and after the anode modification, 4-2[N-(1-naphthalene)-N-aniline] the surface atom force microscope figure of two benzene (NPB), wherein, Fig. 6 a is ITO, Fig. 6 b is ITO/ ten hexafluoro CuPc (F
16CuPc), Fig. 6 c is ITO/NPB, and Fig. 6 d is ITO/F
16CuPc/NPB.
Embodiment 3:
Press the method preparation of embodiment 1, unique different be that organic layer is a sandwich construction, device architecture is ITO/F
16CuPc (4nm)/NPB (45nm)/Alq
3(5nm)/NPB (5nm)/Alq
3(45nm)/LiF/Al (shown in Fig. 2 c).Obtained the Organic Light Emitting Diode of high efficiency, low turn-on voltage, peak efficiency is 7.63cd/A, and cut-in voltage is 2.9V, reaches 100cd/m
2The voltage minimum be 4.3V.
Embodiment 4:
Press the method preparation of embodiment 1, unique different be that organic layer is a sandwich construction, device architecture is ITO/F
16CuPc (4nm)/NPB (50nm)/Alq
3(30nm)/BCP (15nm)/Alq
3(5nm)/LiF/Al is ((as Fig. 2 (d).Obtained the Organic Light Emitting Diode of high efficiency, low turn-on voltage, peak efficiency is 7.31cd/A, and cut-in voltage is 2.7V, reaches 100cd/m
2The voltage minimum be 5.0V.
Multilayer luminescent device performance parameter, as shown in table 1, in the table, the device architecture of label 1,2,3,4,5,6 representatives in the device hurdle is respectively 1 to be: ITO/NPB/3-(8-oxyquinoline) aluminium (Alq
3) (50nm)/lithium fluoride (LiF)/Al; 2 are: ITO/F
16CuPc (4nm)/NPB (50nm)/Alq
3/ LiF/Al; 3 are: ITO/NPB (50nm)/Alq
3(30nm)/2,9-dimethyl-4,7-diphenyl-1,10-ferrosin (BCP) (15nm)/Alq
3(5nm)/LiF/Al; 4 are: ITO/NPB (45nm)/Alq
3(7nm)/NPB (5nm)/Alq
3(45nm)/LiF/Al; 5 are: ITO/F
16CuPc (4nm)/NPB (50nm)/Alq
3(30nm)/BCP (15nm)/Alq
3(5nm)/LiF/Al; 6 are: ITO/F
16CuPc (4nm)/NPB (45nm)/Alq
3(7nm)/NPB (5nm)/Alq
3(45nm)/LiF/Al
Table 1
Claims (5)
1, a kind of Organic Light Emitting Diode based on anode modification comprises substrate, anode, negative electrode; It is characterized in that on the indium-tin oxide anode of Organic Light Emitting Diode, deposition is haled the electronic molecules layer, forms complete dipole layer, haling on the electronic molecules layer each functional layer that order is constructed Organic Light Emitting Diode respectively: one deck organic membrane and negative electrode at least again;
The described electronic molecules of haling is ten hexafluoro CuPcs.
2, the preparation method of Organic Light Emitting Diode as claimed in claim 1 is characterized in that, may further comprise the steps:
The first step, the cleaning of indium-tin oxide anode:
The indium oxide tin glass that etching is good cleaned 〉=10 minutes with washing agent, high purity water, ethanol, acetone and chloroform respectively, then oven dry after washing with running water;
Second step, the modification of indium-tin oxide anode:
Indium oxide tin glass sheet after the oven dry is placed in the vacuum chamber, under vacuum condition, at the uniform velocity to deposit ten hexafluoro CuPcs of 1～15 nano thickness;
The 3rd step, the evaporation organic film:
Indium oxide tin glass sheet after modifying is placed in the vacuum chamber, and under vacuum condition, at the uniform velocity to deposit the organic film of one deck at least, thickness is 50～200nm;
The 4th step, the negative electrode preparation:
With the 3rd step obtained device, under vacuum condition, evaporation negative electrode, thickness are 50～200nm, promptly obtain the organic light emitting diode device of anode modification;
The 5th step, device detection:
With the organic light emitting diode device of gained anode modification, after test under the atmospheric environment room temperature, get finished product.
3, the preparation method of Organic Light Emitting Diode as claimed in claim 2 is characterized in that, described vacuum condition is 4 * 10
-4Under the vacuum condition of Pa; At the uniform velocity the deposition, be with
Speed deposition.
4, the preparation method of Organic Light Emitting Diode as claimed in claim 2 is characterized in that, described organic film is individual layer, bilayer and multilayer; When individual layer, be 3-(8-oxyquinoline) aluminium lamination, deposit thickness is 40～150nm; When bilayer, be 3-(8-oxyquinoline) aluminium lamination and 4,4-2[N-(1-naphthalene)-N-aniline] two benzene layers, the thickness of two-layer deposition is 40～150nm; When multilayer, be 3-(8-oxyquinoline) aluminium lamination, 4,4-2[N-(1-naphthalene)-N-aniline] combination of two benzene layers and 2,9-dimethyl-4,7-diphenyl-1,10-ferrosin layer, the thickness of multilayer deposition is 40～150nm.
5, the preparation method of Organic Light Emitting Diode as claimed in claim 4 is characterized in that, described individual layer, bilayer and multilayer organic membrane all are under vacuum condition, at the following upper surface of one deck organic membrane, with vapor deposition last layer organic film at the uniform velocity.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258130A (en) * | 2017-12-26 | 2018-07-06 | 天津大学 | A kind of regulation and control indium tin oxide surfaces can be with the fluorine-containing self-assembled monolayer and preparation method of work function |
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| CN105679963B (en) * | 2013-01-11 | 2017-11-14 | 陈丽专 | A kind of organic electroluminescence device |
| CN105576142B (en) * | 2013-01-11 | 2017-07-14 | 张哲夫 | A kind of preparation method for modifying indium-tin oxide anode |
| CN105895822B (en) * | 2013-01-11 | 2018-11-06 | 吴剑辉 | A kind of modification indium-tin oxide anode |
| CN105576141B (en) * | 2013-01-11 | 2017-08-25 | 姜玉兰 | A kind of organic electroluminescence device |
| CN106784387A (en) * | 2017-01-16 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of Organic Light Emitting Diode, display base plate and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258130A (en) * | 2017-12-26 | 2018-07-06 | 天津大学 | A kind of regulation and control indium tin oxide surfaces can be with the fluorine-containing self-assembled monolayer and preparation method of work function |
| CN108258130B (en) * | 2017-12-26 | 2020-03-06 | 天津大学 | Fluorine-containing self-assembled monolayer film for regulating and controlling surface energy and work function of indium tin oxide and preparation method thereof |
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