CN100521088C - Method and apparatus for bilayer photoresist dry development - Google Patents
Method and apparatus for bilayer photoresist dry development Download PDFInfo
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- CN100521088C CN100521088C CNB2003801005977A CN200380100597A CN100521088C CN 100521088 C CN100521088 C CN 100521088C CN B2003801005977 A CNB2003801005977 A CN B2003801005977A CN 200380100597 A CN200380100597 A CN 200380100597A CN 100521088 C CN100521088 C CN 100521088C
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Abstract
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2 based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).
Description
The cross reference of related application
[0001] this non-provisional application requires the rights and interests of U.S. Provisional Application No. 60/435286 (application on December 23rd, 2002), U.S. Provisional Application No. 60/483235 (application on June 30th, 2003) and U.S. Provisional Application No. 60/483234 (application on June 30th, 2003); Its content is all introduced by reference at this.
Invention field
[0002] the present invention relates to the method and apparatus of plasma treatment substrate and relate more particularly to the method for Double-layer photoetching glue dry process development.
Background of invention
[0003] in semiconductor processing process, can adopt (dry method) plasma etch process, remove or etching material in the path of composition or the contact point along fine rule or on silicon chip.Plasma etch process is usually included in the treatment chamber, and with the protective layer of cover type composition, for example photoresist layer is located semiconductor chip.In case substrate is positioned in chamber, then admixture of gas ionizable, that dissociate is incorporated in the chamber with predetermined flow velocity, regulate vacuum pump simultaneously, with the operation pressure around realizing.Afterwards, when with or induction or condenser type radio frequency (RF) power (power), or use the transfer of the microwave power of electron cyclotron resonance (ECR) for example and during the existing portion gas material of the electron ionization that heats, form plasma.In addition, the electronics of heating plays the effect of some materials in the ambient gas material that dissociates and the reactant that generation is suitable for the exposed surface etching chemistry.In case the formation plasma, the selected surface of substrate is by plasma etching.Regulate this technology realizing appropriate condition, comprising required reactant and in the desired zone of substrate the suitable concn of the cluster ion of the various parts of etching (feature) (for example, groove, path, contact point etc.).Wherein require etched suitable substrate material to comprise silicon dioxide (SiO
2), low-k dielectric material, polysilicon and silicon nitride.
Summary of the invention
[0004] the present invention relates to the method and apparatus of plasma treatment substrate and relate to the method and apparatus of Double-layer photoetching glue-line dry process development.
[0005] in one aspect of the invention in, disclose in the plasma treatment system, be etched in the method and apparatus of on-chip antireflecting coating (ARC).Introduce and handle gas, described processing gas comprises that one or more common (collectively) contain the gas of nitrogen (N), hydrogen (H) and oxygen (O).In the plasma treatment system, handle gas and form plasma by this.Substrate is exposed under this plasma.
[0006] in addition, disclose and formed double-deck mask in order to be etched in the method and apparatus of on-chip film.On substrate, form film.On film, form antireflecting coating (ARC).On antireflecting coating, form the photoresist pattern.Handle the gas etch antireflecting coating by using, on antireflecting coating, described processing gas comprises that one or more contain the gas of nitrogen (N), hydrogen (H) and oxygen (O) jointly with the photoresist pattern transfer.
Brief description of drawings
[0007] in the accompanying drawings:
[0008] Figure 1A, 1B and 1C show the schematic diagram of the typical process of pattern etching film;
[0009] Fig. 2 shows the schematic block diagram of the simplification of plasma treatment system according to an embodiment of the invention;
[0010] Fig. 3 shows the schematic block diagram of plasma treatment system according to another embodiment of the invention;
[0011] Fig. 4 shows the schematic block diagram of plasma treatment system according to another embodiment of the invention;
[0012] Fig. 5 shows the schematic block diagram of plasma treatment system according to another embodiment of the invention;
[0013] Fig. 6 shows the schematic block diagram of plasma treatment system according to another embodiment of the invention;
[0014] Fig. 7 shows according to an embodiment of the invention, in the plasma treatment system, is etched in the method for on-chip antireflecting coating (ARC);
[0015] Fig. 8 has listed according to another embodiment of the invention, forms double-deck mask in order to be etched in the method for on-chip film.
The detailed description of several embodiments
[0016] in material processing method, pattern etching comprises and applies light-sensitive material, and as the thin layer of photoresist, to the upper surface of substrate, this thin layer of composition subsequently is so that provide in etching process the mask of this pattern transfer on the lower film.The composition of light-sensitive material generally includes for example micro-lithography system of using, by half tone (and associated lens) exposure of radiation source through light-sensitive material, then use developer solution, remove irradiated zone (as the situation of positive photoresist) or not irradiated zone (as the situation of negative photoresist) of light-sensitive material.Can realize that the multilayer mask is used to be etched in the parts in the film.For example, shown in Figure 1A-C, double-deck mask 6 can be used as the mask of etch thin film 4, described double-deck mask 6 comprises photosensitive layer 3 and the organic antireflective coating (ARC) 7 with the pattern 2 that uses conventional lithography technique formation, wherein before the main etching steps of film 4, use independently etching step, will be transferred on the antireflecting coating 7 at the mask pattern in the photosensitive layer 32.
[0017] in one embodiment, handle the method for gas as the dry process development of Double-layer photoetching glue, described processing gas comprises the gas of the gas of nitrogenous (N), hydrogeneous (H) and contains the gas of oxygen (O).Perhaps, two or more nitrogen (N), hydrogen (H) and oxygen (O) can be included in the single gas.For example, can be used as Double-layer photoetching glue dry process development method and introduce ammonia-oxygen (NH
3/ O
2) the base chemistry.In can supplying the embodiment that substitutes, can use nitrogen-hydrogen-oxygen (N
2/ H
2/ O
2) the chemical etching that promotes organic antireflective coating of base.Perhaps, in two kinds of chemistry in front, can add carbon monoxide (CO), or use it to substitute O
2Perhaps, handle gas and can comprise ammonia (NH
3), carbon monoxide (CO) and oxygen (O
2).Perhaps, handle gas and can further comprise helium (He).Can use this chemistry to produce length-width ratio more than or equal to about 3/1 (3-to-1), or even more than or equal to about 4/1 high-aspect-ratio parts.
[0018] according to an embodiment, Fig. 2 has described plasma treatment system 1, it comprises plasma process chamber 10, is connected to diagnosis (diagnostic) system 12 on the plasma process chamber 10, and is connected to the controller 14 on diagnostic system 12 and the plasma process chamber 10.Controller 14 is constructed to make that to contain at least a the above chemical technical recipe (process recipe) (be NH
3/ O
2, N
2/ H
2/ O
2, NH
3/ CO, N
2/ H
2/ CO, NH
3/ O
2/ CO etc.) realize the etching organic antireflective coating.In addition, structure controller 14 is to receive at least one endpoint signal and at least one endpoint signal of reprocessing of self-diagnosable system 12, so that accurately measure the terminal point of this technology.In the embodiment illustrated, plasma treatment system 1 shown in Figure 2 utilizes plasma for material processed.Plasma treatment system 1 can comprise an etching chamber.
[0019] embodiment of describing according to Fig. 3, plasma treatment system 1a can comprise plasma process chamber 10, base sheet rack 20, wherein pending substrate 25 is fixed on the described base sheet rack 20 and vacuum pump system 30.Substrate 25 can for example be semiconductor chip, wafer or LCD.Can for example construct plasma process chamber 10, to promote in the processing region 15 adjacent, generating plasma with substrate 25 surfaces.Operation pressure is introduced and regulated to ionizable gas or admixture of gas through gas injection system (not shown).For example, can use the control device (not shown) to regulate vacuum pump system 30.Can utilize plasma generation that predetermined material is handled special material, and/or assist and remove material from the exposed surface of substrate 25.Plasma treatment system 1a be can construct and 200mm substrate, 300mm substrate handled, or the substrate of virtually any size.
[0020] substrate 25 can for example be fixed on the base sheet rack 25 with the Electrostatic Absorption system.In addition, base sheet rack 20 can for example further comprise the cooling system that contains circulating coolant stream, described cooling system receive from the heat of base sheet rack 20 and with heat transferred in heat exchanger system (not shown), maybe when heating, transmission is from the heat of heat exchanger system.In addition, can for example deliver gas to the dorsal part of substrate 25, to improve the gas-gap heat transfer between substrate 25 and base sheet rack 20 through backside gas system.When requiring the temperature control of substrate under the temperature that is raising or reducing, can use this system.For example, backside gas system can comprise the distribution of gas system in two districts, wherein can change helium gas gap pressure independently between the center and peripheral of substrate 25.In other embodiments, heating/cooling element, as heat-resistant component, or thermo-electric heaters/coolers can be included in the base sheet rack 20, and on the chamber wall of plasma process chamber 10 and on any other assembly in plasma treatment system 1a.
[0021] in the embodiment depicted in fig. 3, in handling space 15, base sheet rack 20 can comprise that the RF power supply is connected to the electrode of handling on the plasma through it.For example, the RF power supply from RF generator 40 can be transferred on the base sheet rack 20 through impedance matching network 50, under RF voltage, make base sheet rack 20 electric deflections.The RF bias voltage can play and add hot electron to form and to keep the effect of plasma.In this structure, system can be used as the operation of reactive ion etching (RIE) reactor, and its middle chamber and upper gas injecting electrode play the effect of earthed surface.The typical frequencies scope of RF bias voltage can be the about 100MHz of about 0.1MHz-.The RF system that is used for plasma treatment is well known to a person skilled in the art.
[0022] or, under multiple frequency, apply the RF power supply to the electrode of base sheet rack.In addition, in plasma process chamber 10, impedance matching network 50 plays the effect of RF power source transition to the plasma that improve by reducing reflected energy.The pattern of matching network (for example L-type, π-type, T-type etc.) is well known to a person skilled in the art.
[0023] vacuum pump system 30 can for example comprise that rate of pumping can reach the molecular vacuum turbine pump (TMP) of 5000 liters/second (with bigger) and the gate valve of adjusting chamber pressure.In the employed conventional plasma processor spare of dry plasma etch, use the TMP of 1000-3000L/s usually.TMP is used for low pressure to be handled, typically less than 50mTorr.For HIGH PRESSURE TREATMENT (promptly greater than about 100mTorr), can use mechanical booster pump and dry roughing pump.In addition, the device (not shown) of monitoring chamber pressure can be connected on the plasma process chamber 10.Pressure measurement device can be for example to be available commercially from MKS Instruments, Inc. (Andover, 628B type Baratron absolute capacity pressure gauge MA).
[0024] controller 14 comprises microprocessor, memory and digital I/O port, and described digital I/O port can generate is enough to transmit and activate the input signal that arrives in the plasma treatment system 1a and the monitoring control voltage from the output signal of plasma treatment system 1a.In addition, controller 14 can be connected on RF generator 40, impedance matching network 50, gas injection system (not shown), vacuum pump system 30 and backside gas transmission system (not shown), substrate/base sheet rack temperature survey system (not shown) and/or the Electrostatic Absorption system (not shown) and exchange message with it.For example, according to a kind of process, can utilize the input signal on the aforementioned components that is stored in the interior program activation arrival plasma treatment system 1a of memory, so that carry out the method for etching organic antireflective coating.An example of controller 14 is available from DellCorporation, Austin, the DELL PRECISION WORKSTATION 610 of Texas
TM
[0025] diagnosis system 12 can comprise the optical diagnostic subsystem (not shown).Optical diagnostic subsystem can comprise detector as (silicon) photodiode or photomultiplier (PMT), in order to measure the luminous intensity of launching from plasma.Diagnosis system 12 can further comprise filter such as narrow Band Interference filter.In can supplying the embodiment that substitutes, diagnosis system 12 can comprise at least one linear CCD (charge coupled device), CID (charge injection device) array and optical dispersion device such as grating or prism.In addition, diagnosis system 12 can comprise the monochromator (for example grating/detector system) of the light of measurement under setted wavelength, or (for example having rotating grating) spectroscope of measure spectrum, for example at the device described in the U.S. Patent No. 5888337.
[0026] diagnosis system 12 can comprise high resolution optical emission spectroscopy (OES) transducer as available from Peak Sensor Systems or available from Verity Instruments, the OES transducer of Inc..This OES transducer has the broad band across ultraviolet (UV), visible light (VIS) and near-infrared (NIR) spectrum.Resolution is about 1.4 dusts, that is to say, transducer can be collected from 5550 kinds of wavelength between 240-1000nm.For example, the OES transducer can be furnished with high sensitive miniature fiber UV-VIS-NIR spectroscope, and described spectroscope is integrated with the linear CCD array of 2048 pixels conversely.
[0027] spectroscope receives the light through single fiber and bunchy Optical Fiber Transmission, wherein uses fixed grating, exports from the light of optical fiber and disperses on across linear ccd array.Be similar to above-described structure, the light of launching through the optical vacuum outlet focuses on the input of optical fiber through protruding spherical lens.Three kinds of spectroscopes (be conditioned for especially separately fix spectral region (UV, VIS and NIR)) form the treatment chamber transducer.Various spectroscopes comprise independently A/D frequency converter.Recently, depend on the purposes of transducer, every 0.1-1.0 can write down whole emission spectrum second.
[0028] in the embodiment depicted in fig. 4, plasma process chamber 1b can for example be similar to the embodiment of Fig. 2 or 3, with except being included in referring to figs. 2 and 3 described those assemblies, also further comprise or static state, the perhaps magnetic field system 60 of machinery or electricity rotation, so that potentially/or improve the uniformity of plasma treatment.In addition, controller 14 can be connected on the magnetic field system 60, so that regulate rotary speed and magnetic field intensity.The design of rotating magnetic field and device are well known to a person skilled in the art.
[0029] in the embodiment depicted in fig. 5, plasma process chamber 1c can for example be similar to the embodiment of Fig. 2 or 3, with can further comprise upper electrode 70, wherein the RF power supply can be connected on the described upper electrode 70 through impedance matching network 74 from RF generator 72.Applying the RF power supply can be the about 200MHz of about 0.1MHz-to the typical frequencies scope on the upper electrode.In addition, applying power supply can be the about 100MHz of about 0.1MHz-to the typical frequencies scope on the lower electrode.In addition, controller 14 is connected on RF generator 72 and the impedance matching network 74, so that control applies the RF power supply to upper electrode 70.The design of upper electrode and device are well known to a person skilled in the art.
[0030] in the embodiment depicted in fig. 6, plasma process chamber 1d can for example be similar to the embodiment of Fig. 2 and 3, with can further comprise induction coil 80, wherein the RF power supply is connected on the described induction coil 80 through impedance matching network 84 from RF generator 82.The RF power supply is coupled in the plasma treatment district 45 through the induction of dielectric window (not shown) from induction coil 80.Applying the RF power supply can be the about 100MHz of about 10MHz-to the typical frequencies scope on the induction coil 80.Similarly, applying power supply can be the about 100MHz of about 0.1MHz-to the typical frequencies scope on the sucker electrode.In addition, can use open flume type Faraday shield (not shown), to reduce the capacitive coupling between induction coil 80 and the plasma.In addition, controller 14 can be connected on RF generator 82 and the impedance matching network 84, so that control applies power supply to induction coil 80.In can supplying the embodiment that substitutes, induction coil 80 can be " spiral " coil or " flatwise coil " that interconnects with above plasma treatment district 15, as in transformer-coupled plasma (TCP) reactor.Plasma (ICP) source of induction coupling or the design and the device in transformer-coupled plasma (TCP) source are well known to a person skilled in the art.
[0031] or, can use electron cyclotron resonance (ECR) to form plasma.In yet another embodiment, the emission by the Helicon ripple forms plasma.In yet another embodiment, form plasma by surperficial wave propagation.Above-described each plasma source is well known to a person skilled in the art.
[0032] in the following discussion, use plasma processor spare has been proposed, the method for etching organic antireflective coating.For example, plasma processor spare can comprise various elements, as in those and the combination described in Fig. 2-6.
[0033] in one embodiment, the method for etching organic antireflective coating comprises NH
3/ O
2The base chemistry.For example, process parameter space can comprise the chamber pressure of the about 1000mTorr of about 20-, NH
3Handling gas flow rate range is the about 1000sccm of about 50-, O
2Handling gas flow rate range is the about 100sccm of about 5-, and the RF bias voltage scope of upper electrode (for example element among Fig. 5 70) is the about 2000W of about 500-, and the RF bias voltage scope of lower electrode (for example element among Fig. 5 20) is the about 500W of about 10-.In addition, the bias frequency scope of upper electrode can be the about 200MHz of about 0.1MHz-, for example 60MHz.In addition, the bias frequency scope of lower electrode can be the about 100MHz of about 0.1MHz-, for example 2MHz.
[0034] in first example, use plasma processor spare has been proposed, as shown in Figure 5 the sort of, the method for etching organic antireflective coating.Yet described method is not limited to this explanation that exemplifies.Table I has been listed and has been used the following technical recipe that exemplifies, the critical dimension of etched parts: chamber pressure=100mTorr in organic antireflective coating; RF power=the 1200W of upper electrode; RF power=the 100W of lower electrode; Handle gas NH
3/ O
2Flow velocity=360/36sccm; Electrode gap between the upper surface of the substrate 25 on electrode 70 lower surfaces (referring to Fig. 5) and the base sheet rack 20 is 60mm; Lower electrode temperature (base sheet rack 20 in Fig. 5)=20C; Upper electrode temperature (electrode 70 in Fig. 5)=60C; Chamber wall temperature=50C; Helium pressure center/edge=the 10/35Torr of dorsal part; With etching period be 184 seconds (use for example diagnosis system 12,, be equivalent to 20% the etching of crossing) according to endpoint detection.
Table I
| NH 3/O 2 | The center | The edge |
| Top PR is residual | 155nm | 164nm |
| Top CD | 212nm | 202nm |
| Bottom CD | 200nm | 286nm |
| The CD skew | +1nm | +0nm |
[0035] in table 1 and following table, PR is meant that photoresist and CD are meant critical dimension (critical dimension).This statistical tables and reports road such as photoresist thickness residual after the antireflecting coating etching, result for the ARC parts the skew of the critical dimension of top and bottom and critical dimension.In addition, data have been reported in center and edge.This digital proof is in the success of keeping this technology aspect the CD.
[0036] in can supplying the embodiment that substitutes, process chemistry can further comprise helium (He).Introduce the sidewall roughness that helium can reduce parts in this technology.
[0037] in second example, Table II has been listed and has been used the following technical recipe that exemplifies, the critical dimension of etched parts: chamber pressure=100mTorr in organic antireflective coating; RF power=the 1200W of upper electrode; RF power=the 100W of lower electrode; Handle gas NH
3/ O
2/ He flow velocity=360/36/100sccm; Electrode gap between the upper surface of the substrate 25 on electrode 70 lower surfaces (referring to Fig. 5) and the base sheet rack 20 is 60mm; Lower electrode temperature (base sheet rack 20 in Fig. 5)=20C; Upper electrode temperature (electrode 70 in Fig. 5)=60C; Chamber wall temperature=50C; Helium pressure center/edge=the 10/35Torr of dorsal part; With etching period be 184 seconds (use for example diagnosis system 12,, be equivalent to 18% the etching of crossing) according to endpoint detection.
Table II
| NH 3/O 2/He | The center | The edge |
| Top PR is residual | 168nm | 171nm |
| Top CD | 213nm | 208nm |
| Bottom CD | 202nm | 201nm |
| The CD skew | +7nm | +6nm |
[0038] Table II has been reported such as photoresist thickness residual after the antireflecting coating etching, result for the ARC parts the skew of the critical dimension of top and bottom and critical dimension.In addition, data have been reported in center and edge.The success of this this technology of digital proof.In addition, relevant with Table II technology has been reported and the similar result of Table I report.Yet the SEM data show adds the sidewall roughness (not shown) that He tends to hang down in the situation decline of CD small loss parts.
[0039] in can supplying the embodiment that substitutes, the method for etching organic antireflective coating can comprise N
2/ H
2/ O
2The base chemistry.Process parameter space can comprise the chamber pressure of the about 1000mTorr of about 20-, N
2Handling gas flow rate range is the about 1000sccm of about 50-, H
2Handling gas flow rate range is the about 1000sccm of about 50-, O
2Handling gas flow rate range is the about 100sccm of about 5-, and the RF bias voltage scope of upper electrode (for example element among Fig. 5 70) is the about 2000W of about 500-, and the RF bias voltage scope of lower electrode (for example element among Fig. 5 20) is the about 500W of about 10-.
[0040] in the 3rd example, use plasma processor spare has been proposed, as shown in Figure 5 the sort of, the method for etching organic antireflective coating.Yet described method is not limited to this explanation that exemplifies.Table III has been listed and has been used the following technical recipe that exemplifies, the critical dimension of etched parts: chamber pressure=100mTorr in organic antireflective coating; RF power=the 1200W of upper electrode; RF power=the 100W of lower electrode; Handle gas N
2/ H
2/ O
2Flow velocity=100/300/36sccm; Electrode gap between the upper surface of the substrate 25 on electrode 70 lower surfaces (referring to Fig. 5) and the base sheet rack 20 is 60mm; Lower electrode temperature (base sheet rack 20 in Fig. 5)=20C; Upper electrode temperature (electrode 70 in Fig. 5)=60C; Chamber wall temperature=50C; Helium pressure center/edge=the 10/35Torr of dorsal part; With etching period be 150 seconds (use for example diagnosis system 12,, be equivalent to 21% the etching of crossing) according to endpoint detection.
Table III
| N 2/H 2/O 2 | The center | The edge |
| Top PR is residual | 177nm | 163nm |
| Top CD | 273nm | 295nm |
| Bottom CD | 289nm | 295nm |
| The CD skew | 94nm | 100nm |
[0041] Table III has also proved the success of this method.
[0042] in can supplying the embodiment that substitutes, N
2/ H
2/ O
2Process chemistry can further comprise helium (He).Introduce the sidewall roughness that helium can reduce parts in this technology.
[0043] in can supplying the embodiment that substitutes, the method for etching organic antireflective coating comprises NH
3/ CO or NH
3/ CO/O
2The base chemistry.This processing gas also can comprise helium.For example, process parameter space can comprise the chamber pressure of the about 1000mTorr of about 20-, NH
3Handling gas flow rate range is that about 1000sccm of about 50-and CO processing gas flow rate range are the about 300sccm of about 5-.Work as O
2Be included in when handling in the gas, its flow rates can be the about 100sccm of about 5-.When He was included in any embodiment of this processing gas or this application, its flow rates can be the about 300sccm of about 5-.The RF bias voltage scope of upper electrode (for example element among Fig. 5 70) is the about 2000W of about 500-, and the RF bias voltage scope of lower electrode (for example element among Fig. 5 20) is the about 500W of about 10-, the bias frequency scope of upper electrode can be the about 200MHz of about 0.1MHz-, 60MHz for example, with the bias frequency scope of lower electrode can be the about 100MHz of about 0.1MHz-, for example 2MHz.
[0044] in the 4th example, use plasma processor spare has been proposed, as shown in Figure 5 the sort of, the method for etching organic antireflective coating.Yet described method is not limited to this explanation that exemplifies.Table IV has been listed and has been used the following technical recipe that exemplifies, the critical dimension of etched parts: chamber pressure=200mTorr in organic antireflective coating; RF power=the 1200W of upper electrode; RF power=the 200W of lower electrode; Handle gas NH
3/ CO flow velocity=300/100sccm; Electrode gap between the upper surface of the substrate 25 on electrode 70 lower surfaces (referring to Fig. 5) and the base sheet rack 20 is 60mm; Lower electrode temperature (base sheet rack 20 in Fig. 5)=20C; Upper electrode temperature (electrode 70 in Fig. 5)=60C; Chamber wall temperature=50C; Helium pressure center/edge=the 10/35Torr of dorsal part; With etching period be 180 seconds.
Table IV
| NH 3/CO | Isolated | Nested (nested) |
| IL thickness | 68nm | 68nm |
| The PR degree of depth | 598nm | 589nm |
| Bottom CD | 161nm | 154nm |
| The CD skew | -2nm | -10nm |
[0045] in Table IV, IL thickness is meant the upper thickness (i.e. the thickness of photosensitive layer 3 in Figure 1A-1C) of double-deck mask, the PR degree of depth is meant the underlayer thickness (being the thickness of antireflecting coating (ARC) 7) of double-deck mask, bottom CD be meant image in photosensitive upper strata with etching is transferred to bottom antireflective coating after the critical dimension at feature bottom place and CD skew be meant the critical dimension at the feature bottom place in photosensitive layer before the etching antireflecting coating and after the etching antireflecting coating critical dimension poor at the feature bottom place in antireflecting coating.In addition, the two has reported data with nested (nested) parts (being the parts of close space length) for stand-alone component (being the parts of wide spacing).This digital proof is in particular for more than or equal to about 3/1 or more than or equal to about 4/1 parts length-width ratio, and this technology is in the success of keeping aspect the CD.
[0046] in the 5th example, use plasma processor spare has been proposed, as shown in Figure 5 the sort of, the method for etching organic antireflective coating.Yet described method is not limited to this explanation that exemplifies.Table V has been listed and has been used the following technical recipe that exemplifies, the critical dimension of etched parts: chamber pressure=200mTorr in organic antireflective coating; RF power=the 1200W of upper electrode; RF power=the 200W of lower electrode; Handle gas NH
3/ CO flow velocity=250/150sccm; Electrode gap between the upper surface of the substrate 25 on electrode 70 lower surfaces (referring to Fig. 5) and the base sheet rack 20 is 60mm; Lower electrode temperature (base sheet rack 20 in Fig. 5)=20C; Upper electrode temperature (electrode 70 in Fig. 5)=60C; Chamber wall temperature=50C; Helium pressure center/edge=the 10/35Torr of dorsal part; With etching period be 240 seconds.
Table V
| NH 3/CO | Isolated | Nested |
| IL thickness | 93nm | 100nm |
| The PR degree of depth | 696nm | 643nm |
| Bottom CD | 171nm | 171nm |
| The CD skew | 7nm | 6nm |
[0047] in Table V, IL thickness is meant the upper thickness (i.e. the thickness of photosensitive layer 3 in Figure 1A-1C) of double-deck mask, the PR degree of depth is meant the underlayer thickness (being the thickness of antireflecting coating (ARC) 7) of double-deck mask, bottom CD be meant image in photosensitive upper strata with etching is transferred to bottom antireflective coating after the critical dimension at feature bottom place and CD skew be meant the critical dimension at the feature bottom place in photosensitive layer before the etching antireflecting coating and after the etching antireflecting coating critical dimension poor at the feature bottom place in antireflecting coating.In addition, the two has reported data for stand-alone component (being the parts of wide spacing) and nested unit (being the parts of close space length).Further proof is in particular for the parts length-width ratio that surpasses 4.5-1 for these data, and this technology is in the success of keeping aspect the CD.
[0048] in the 6th example, use plasma processor spare has been proposed, as shown in Figure 4 the sort of, the method for etching organic antireflective coating.Yet described method is not limited to this explanation that exemplifies.Table VI has been listed and has been used the following technical recipe that exemplifies, the critical dimension of etched parts: chamber pressure=100mTorr in organic antireflective coating; RF power=the 300W of lower electrode; Handle gas NH
3/ O
2/ CO flow velocity=200/10/50sccm; Electrode gap between the upper surface of the substrate 25 on lower surface of the roof of chamber 10 (referring to Fig. 4) and the base sheet rack 20 is 47mm; Lower electrode temperature (base sheet rack 20 in Fig. 4)=40C; Roof temperature=the 60C of chamber 10; Chamber wall temperature=40C; Helium pressure center/edge=the 10/40Torr of dorsal part; With etching period be 140 seconds (comprise 15% cross etching).
Table VI
| NH 3?w/OE | 1:5 | 1:3 | 1:1.5 | |
| Bottom CD C/E | 158/158nm | 156/158nm | 162/165nm | |
| CD is offset C/E | -5/-5nm | -3/- | + | 2/-5nm |
| The residual C/E of top PR | 79/88nm | |||
| Top PR loses C/E | -71/-62nm | |||
| NH 3/O 2 | 1:5 | 1:3 | 1:1.5 | |
| Bottom CD C/E | 176/158nm | 173/169nm | 178/170nm | |
| CD is offset C/E | +16/+12nm | +14/+10nm | +16/+10nm | |
| The residual C/E of top PR | 96/110nm | |||
| Top PR loses C/E | -54/-40nm | |||
| NH 3/CO/O 2 | 1:5 | 1:3 | 1:1.5 | |
| Bottom CD C/E | 164/160nm | 164/159nm | 165/159nm | |
| CD is offset C/E | +4/- | + | 5/0nm | +3/-1nm |
| The residual C/E of top PR | 103/110nm | |||
| Top PR loses C/E | -47/-40nm |
[0049] in Table VI, for three kinds of different parts spacings (or pitch), promptly the component width of 1:5,1:3 and 1:1.5 is than spacing, and having listed above-mentioned chemistry (is NH
3/ CO/O
2) the result.For substrate center and edge (C/E), listed the result, wherein the bottom CD be meant in case by etching with the pattern transfer in the photosensitive upper layer after the antireflecting coating of bottom, critical dimension at the feature bottom place, CD skew are meant poor in the critical dimension at the critical dimension at the feature bottom place in photosensitive layer before the etching antireflecting coating and the feature bottom place in antireflecting coating after the etching antireflecting coating.The residual thickness of the photosensitive layer on top after the etching antireflecting coating and the thickness that PR loss in top is meant top photosensitive layer residual after the etching antireflecting coating of being meant of top PR.
[0050] in Table VI, also show two kinds of other chemical results, that is pure ammonia (NH
3) chemistry, it is crossed and is etched to 35%, and NH
3/ O
2Chemistry, it is crossed and is etched to 15%.In last chemistry, technical recipe is similar to NH
3/ CO/O
2Chemistry, that different is the RF power=500W of lower electrode; Handle gas NH
3Flow velocity=400sccm (no CO and O
2Flow velocity); With etching period be 90 seconds (comprise 35% cross etching).In addition, in one chemistry of back, technical recipe is similar to NH
3/ CO/O
2Chemistry, different is to handle gas O
2Flow velocity=20sccm (no CO flow velocity); With etching period be 135 seconds (comprise 20% cross etching).As shown in Table VI, for pure ammonia situation, the CD skew is low, and this for example is required; Yet, in the etching process of antireflecting coating, form a large amount of residues in the bottom of parts.On the contrary, when adding O
2In the time of in process chemistry, form at the residue of feature bottom and to be removed; Yet the CD skew is bigger.Yet, when adding O
2With CO in process chemistry the time, form at the residue of feature bottom and to be removed, and CD skew lower (as the situation in pure ammonia).
[0051] usually, can use design (DOE) the decision etching period of experimental technique, but also can use end point determination to decide.A kind of possibility method of end point determination be monitoring show when since approaching basically when finishing the etching of antireflecting coating and contacting the variation that causes taking place plasma chemistry with the base material film from the luminescent spectrum part of plasma slab.For example, the spectra part that shows this variation comprises the wavelength of 387.2nm (CN) and can use luminescent spectrum (OES) to measure.The emission degree of those frequencies that are equivalent to stride across certain threshold level (for example drop to be essentially 0 or be increased to be higher than specific degrees) afterwards, can think that terminal point finishes.Also can use other wavelength that endpoint information is provided.In addition, extensible etching period is to comprising the overetched time period, wherein crosses the etching period section and constituted that etch process begins and and the part-time (be 1-100%) of end point determination between correlation time.
[0052] Fig. 7 has listed according to an embodiment of the invention, in the plasma treatment system, is etched in the flow chart of the method for on-chip antireflecting coating (ARC).Handle gas therein and be incorporated into beginning operation 400 in 410 in the plasma treatment system, wherein handle the gas of the gas that gas comprises nitrogenous (N), hydrogeneous (H) and contain the gas of oxygen (O).For example, handle gas and can comprise ammonia (NH
3) and diatomic oxygen (O
2).Perhaps, handle gas and can comprise diatomic nitrogen (N
2), diatomic hydrogen (H
2) and diatomic oxygen (O
2).Perhaps, handle gas and can comprise ammonia (NH
3) and carbon monoxide (CO).Perhaps, handle gas and can comprise ammonia (NH
3), carbon monoxide (CO) and oxygen (O
2).Perhaps, handle gas and can comprise diatomic nitrogen (N
2), diatomic hydrogen (H
2) and carbon monoxide (CO).Perhaps, handle gas and can further comprise helium (He).
[0053] in 420, use for example one of described any system of Fig. 2-6 and combination thereof, in the plasma treatment system, form plasma by handling gas.
[0054] in 430, the substrate that will contain antireflecting coating is exposed under the plasma that forms in 420.After very first time section, stop operation 400.For example, usually by etching antireflecting coating required time, or by deciding the substrate that wherein has antireflecting coating to be exposed to the very first time section of institute's warp under the plasma photoresist pattern transfer required time on the antireflecting coating.Usually, pre-determine the desired very first time section of thickness transfer printing photoresist pattern through antireflecting coating.Perhaps, can or cross the etching period section by second time period and further increase very first time section.As mentioned above, cross the part that etching period can comprise very first time section, cross the etching period section as 1-100% and this and can comprise the etching time expand that exceeds end point determination.
[0055] Fig. 8 has listed according to another embodiment of the invention, and in the plasma treatment system, layer mask is in order to be etched in the method for on-chip film in the formation.This method has been described, wherein in 510, on substrate, to form film to start with in flow chart 500.Film can comprise oxide skin(coating), as (SiO
2) and it can pass through the whole bag of tricks, form comprising chemical vapor deposition (CVD).
[0056] in 520, on the substrate of cover film, forms antireflecting coating (ARC).Antireflecting coating can be the organic antireflective coating that for example uses routine techniques such as spin coating system to form.
[0057] in 530, on the substrate that covers antireflecting coating, forms the photoresist pattern.Can use routine techniques, form photoresist film as photoresist spin coating system.Can as segmentation micro-lithography system and developer solution, in photoresist film, form pattern by using routine techniques.
[0058] in 540, in order to form layer mask, with the photoresist pattern transfer on antireflecting coating.Use dry etch technique to finish the transfer printing of pattern, wherein carry out etch process in the plasma treatment system, gas is handled in described etch process utilization, and described processing gas comprises the gas of the gas of nitrogenous (N), hydrogeneous (H) and contains the gas of oxygen (O).For example, handle gas and can comprise ammonia (NH
3) and diatomic oxygen (O
2).Perhaps, handle gas and can comprise diatomic nitrogen (N
2), diatomic hydrogen (H
2) and diatomic oxygen (O
2).Perhaps, handle gas and can comprise ammonia (NH
3) and carbon monoxide (CO).Perhaps, handle gas and can comprise ammonia (NH
3), carbon monoxide (CO) and oxygen (O
2).Perhaps, handle gas and can comprise diatomic nitrogen (N
2), diatomic hydrogen (H
2) and oxygen (O
2).Perhaps, aforesaid processing gas can further comprise helium (He).Use for example one of described any system of Fig. 2-6, in the plasma treatment system, be exposed under the formed plasma by handling the substrate that gas forms plasma and will contain antireflecting coating.Usually by etching antireflecting coating required time, or by deciding the substrate that wherein has antireflecting coating to be exposed to the very first time section of institute's warp under the plasma photoresist pattern transfer required time on the antireflecting coating.Usually, pre-determine the desired very first time section of thickness transfer printing photoresist pattern through antireflecting coating.Yet, typically, further increase very first time section by second time period or mistake etching period section.As mentioned above, cross the part that etching period can comprise very first time section, cross the etching period section as 1-100% and this and can comprise the etching time expand that exceeds end point determination.
[0059] although more than described only some embodiments of the present invention in detail, but those skilled in the art recognizes easily under the situation that does not substantially deviate from novel teachings of the present invention and advantage that the many modifications in embodiment are possible.Therefore, all this modifications are intended comprising within the scope of the invention.
Claims (82)
1. method that in the plasma treatment system, is etched in on-chip organic antireflective coating, this method comprises:
Introduce and handle gas, described processing gas comprises that one or more contain N jointly
2, H
2, O
2Gas with CO;
In described plasma treatment system, handle gas and form plasma by this; With
The described substrate that will have described organic antireflective coating is exposed to described plasma, with the described organic antireflective coating of etching, prevents from basically simultaneously to form at described on-chip residue.
2. the process of claim 1 wherein that described processing gas further comprises helium.
3. the process of claim 1 wherein that the described described substrate that will have described organic antireflective coating that carries out very first time section is exposed to described plasma.
4. the method for claim 3 is wherein measured described very first time section by end point determination.
5. the method for claim 4, wherein said end point determination comprises the luminescent spectrum method.
6. the method for claim 3, wherein said very first time section are equivalent to the time of the described organic antireflective coating of etching and prolong by second time period.
7. the method for claim 6, wherein said second time period is the part of described very first time section.
8. one kind forms double-deck mask in order to be etched in the method for on-chip film, and this method comprises:
On described substrate, form described film;
On described film, form organic antireflective coating;
On described organic antireflective coating, form the photoresist pattern; With
Use and handle gas, by the described organic antireflective coating of plasma etching, to described organic antireflective coating, wherein said processing gas comprises that one or more contain N jointly with described photoresist pattern transfer
2, H
2, O
2With the gas of CO, and the described organic antireflective coating of wherein said plasma etching prevents to form at described on-chip residue basically.
9. the method for claim 8, wherein said processing gas further comprises helium.
10. the method for claim 8 is wherein carried out the described etching of the described antireflecting coating of very first time section.
11. the method for claim 10 is wherein measured described very first time section by end point determination.
12. the method for claim 11, wherein said end point determination comprises the luminescent spectrum method.
13. the method for claim 10, wherein said very first time section are equivalent to the time of the described antireflecting coating of etching and prolong by second time period.
14. the method for claim 13, wherein said second time period is the part of described very first time section.
15. in order to be etched in the plasma treatment system of on-chip organic antireflective coating, this system comprises:
Be used to promote by handling the plasma process chamber that gas forms plasma; With
Be connected to described plasma process chamber and be configured to use described processing gas to realize that technical recipe is used for the controller of the described organic antireflective coating of plasma etching, wherein said processing gas comprises that one or more contain N jointly
2, H
2, O
2With the gas of CO, and the described organic antireflective coating of wherein said plasma etching prevents to form at described on-chip residue basically.
Be connected to described plasma process chamber and be connected to diagnosis system on the described controller 16. the system of claim 15, wherein said system further comprise.
17. the system of claim 16, wherein said diagnosis system are constructed to receive the signal relevant with the light of launching from described plasma.
18. the system of claim 15, wherein said processing gas further comprises helium.
19. the system of claim 16, wherein said controller cause that the described substrate with described antireflecting coating is exposed to described section of the following very first time of plasma.
20. the system of claim 19 is wherein measured described very first time section by the end point determination of being measured by described diagnosis system.
21. the system of claim 20, wherein said diagnosis system comprises the luminescent spectrum device.
22. the system of claim 19, wherein said very first time section are equivalent to the time of the described antireflecting coating of etching and prolong by second time period.
23. the system of claim 22, wherein said second time period is the part of described very first time section.
24. one kind in the plasma treatment system in on-chip organic antireflective coating the method for etching high-aspect-ratio parts, this method comprises:
Introducing contains the processing gas of ammonia, oxygen and carbon monoxide;
In described plasma treatment system, handle gas and form plasma by this; With
The described substrate that will have described organic antireflective coating is exposed to described plasma, with the described organic antireflective coating of etching, prevents from basically simultaneously to form at described on-chip residue,
Wherein said high-aspect-ratio parts comprise the length-width ratio more than or equal to 3/1.
25. the method for claim 24, wherein said processing gas further comprises helium.
26. the method for claim 25, wherein the flow rates of helium is 5-300sccm.
27. the method for claim 24, the described substrate that will have described organic antireflective coating that wherein carries out very first time section is exposed to described plasma.
28. the method for claim 27 is wherein measured described very first time section by end point determination.
29. the method for claim 28, wherein said end point determination comprises the luminescent spectrum method.
30. the method for claim 27, wherein said very first time section are equivalent to the time of the described organic antireflective coating of etching and prolong by second time period.
31. the method for claim 30, wherein said second time period is the part of described very first time section.
32. the method for claim 24, wherein the flow velocity of ammonia is 50-1000sccm.
33. the method for claim 32, wherein the flow velocity of carbon monoxide is 5-300sccm.
34. one kind forms double-deck mask in order to be etched in the method for on-chip film, this method comprises:
On described substrate, form described film;
On described film, form organic antireflective coating;
On described organic antireflective coating, form the photoresist pattern; With
Use and handle gas, by plasma etching height in described organic antireflective coating
Compare parts, with described photoresist pattern transfer to described organic antireflective coating, wherein said processing gas comprises ammonia, oxygen and carbon monoxide, wherein said high-aspect-ratio parts comprise the length-width ratio more than or equal to 3/1, and wherein said described photoresist pattern transfer are prevented to the described organic antireflective coating to form at described on-chip residue basically.
35. the method for claim 34, wherein said processing gas further comprises helium.
36. the method for claim 35, wherein the flow rates of helium is 5-300sccm.
37. the method for claim 34 is wherein carried out the described etching of the described antireflecting coating of very first time section.
38. the method for claim 37 is wherein measured described very first time section by end point determination.
39. the method for claim 38, wherein said end point determination comprises the luminescent spectrum method.
40. the method for claim 37, wherein said very first time section are equivalent to the time of the described antireflecting coating of etching and prolong by second time period.
41. the method for claim 40, wherein said second time period is the part of described very first time section.
42. the method for claim 34, wherein the flow velocity of ammonia is 50 1 1000sccm.
43. the method for claim 42, wherein the flow velocity of carbon monoxide is 5-300sccm.
44. in order to the plasma treatment system of etching high-aspect-ratio parts in on-chip organic antireflective coating, this system comprises:
Be used to promote by handling the plasma process chamber that gas forms plasma; With
Be connected to described plasma process chamber and be configured to use described processing gas to realize that technical recipe is used for the controller of the described high-aspect-ratio parts of etching in described organic antireflective coating, wherein said processing gas comprises ammonia, oxygen and carbon monoxide, wherein said high-aspect-ratio parts comprise the length-width ratio more than or equal to 3/1, and wherein said in described organic antireflective coating the described high-aspect-ratio parts of etching prevent from basically to form at described on-chip residue.
Be connected to described plasma process chamber and be connected to diagnosis system on the described controller 45. the system of claim 44, wherein said system further comprise.
46. the system of claim 45, wherein said diagnosis system are constructed to receive the signal relevant with the light of launching from described plasma.
47. the system of claim 44, wherein said processing gas further comprises helium.
48. the system of claim 47, wherein the flow rates of helium is 5-300sccm.
49. the system of claim 45, wherein said controller cause that the described substrate with described antireflecting coating is exposed to described section of the following very first time of plasma.
50. the system of claim 49 is wherein measured described very first time section by the end point determination of being measured by described diagnosis system.
51. the system of claim 50, wherein said diagnosis system comprises the luminescent spectrum device.
52. the system of claim 49, wherein said very first time section are equivalent to the time of the described antireflecting coating of etching and prolong by second time period.
53. the system of claim 44, wherein the flow velocity of ammonia is 50-1000sccm.
54. the system of claim 53, wherein the flow velocity of carbon monoxide is 5-300sccm.
55. one kind in the plasma treatment system in on-chip organic antireflective coating the method for etching part, this method comprises:
Introducing contains the processing gas of ammonia, carbon monoxide and oxygen;
In described plasma treatment system, handle gas and form plasma by this; With
The described substrate that will have described organic antireflective coating is exposed to described plasma, with the described organic antireflective coating of etching, prevents from basically simultaneously to form at described on-chip residue.
56. the method for claim 55, wherein said processing gas further comprises helium.
57. the method for claim 55, wherein the flow rates of ammonia is 50-1000sccm, and the flow rates of oxygen is that the flow rates of 5-100sccm and carbon monoxide is 5-300sccm.
58. the method for claim 56, wherein the flow rates of helium is 5-300sccm.
59. the method for claim 55, the described described substrate that will have described organic antireflective coating that wherein carries out very first time section is exposed to described plasma.
60. the method for claim 59 is wherein measured described very first time section by end point determination.
61. the method for claim 60, wherein said end point determination comprises the luminescent spectrum method.
62. the method for claim 59, wherein said very first time section are equivalent to the time of the described organic antireflective coating of etching and prolong by second time period.
63. the method for claim 62, wherein said second time period is the part of described very first time section.
64. one kind forms double-deck mask in order to be etched in the method for on-chip film, this method comprises:
On described substrate, form described film;
On described film, form organic antireflective coating;
On described organic antireflective coating, form the photoresist pattern; With
Use and handle gas, by plasma etching parts in described organic antireflective coating, with described photoresist pattern transfer to described organic antireflective coating, wherein said processing gas comprises ammonia, carbon monoxide and oxygen, and wherein said described photoresist pattern transfer is prevented to the described organic antireflective coating to form at described on-chip residue basically.
65. the method for claim 64, wherein said processing gas further comprises helium.
66. the method for claim 64, wherein the flow rates of ammonia is 50-1000sccm, and the flow rates of oxygen is that the flow rates of 5-100sccm and carbon monoxide is 5-300sccm.
67. the method for claim 65, wherein the flow rates of helium is 5-300sccm.
68. the method for claim 64 is wherein carried out the described etching of the described antireflecting coating of very first time section.
69. the method for claim 68 is wherein measured described very first time section by end point determination.
70. the method for claim 69, wherein said end point determination comprises the luminescent spectrum method.
71. the method for claim 68, wherein said very first time section are equivalent to the time of the described antireflecting coating of etching and prolong by second time period.
72. the method for claim 71, wherein said second time period is the part of described very first time section.
73. in order to the plasma treatment system of etching part in on-chip organic antireflective coating, this system comprises:
Promotion is by handling the plasma process chamber that gas forms plasma; With
Be connected to described plasma process chamber and be configured to use described processing gas to realize that technical recipe is used for the controller of the described parts of etching in described organic antireflective coating, wherein said processing gas comprises ammonia, carbon monoxide and oxygen, and wherein said in described organic antireflective coating the described parts of etching prevent from basically to form at described on-chip residue.
Be connected to described plasma process chamber and be connected to diagnosis system on the described controller 74. the system of claim 73, wherein said system further comprise.
75. the system of claim 74, wherein said diagnosis system are constructed to receive the signal relevant with the light of launching from described plasma.
76. the system of claim 73, wherein said processing gas further comprises helium.
77. the system of claim 73, wherein the flow rates of ammonia is 50-1000sccm, and the flow rates of oxygen is that the flow rates of 5-100sccm and carbon monoxide is 5-300sccm.
78. the system of claim 76, wherein the flow rates of helium is 5-300sccm.
79. the system of claim 74, wherein said controller cause that the described substrate with described antireflecting coating is exposed to described section of the following very first time of plasma.
80. the system of claim 79 is wherein measured described very first time section by the end point determination of being measured by described diagnosis system.
81. the system of claim 80, wherein said diagnosis system comprises the luminescent spectrum device.
82. the system of claim 79, wherein said very first time section are equivalent to the time of the described antireflecting coating of etching and prolong by second time period.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43528602P | 2002-12-23 | 2002-12-23 | |
| US60/435,286 | 2002-12-23 | ||
| US60/483,234 | 2003-06-30 | ||
| US60/483,235 | 2003-06-30 |
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| CN110928142B (en) * | 2019-11-28 | 2023-08-29 | 北京遥测技术研究所 | Method for improving bonding force between photoresist and metal substrate |
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| US20010024769A1 (en) * | 2000-02-08 | 2001-09-27 | Kevin Donoghue | Method for removing photoresist and residues from semiconductor device surfaces |
| US20020022281A1 (en) * | 2000-02-11 | 2002-02-21 | Flanner Janet M | Convertible hot edge ring to improve low-k dielectric etch |
| WO2002075796A1 (en) * | 2001-03-20 | 2002-09-26 | Applied Materials, Inc. | Method of etching organic antireflection coating (arc) layers |
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2003
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|---|---|---|---|---|
| EP0813233A2 (en) * | 1996-06-12 | 1997-12-17 | Applied Materials, Inc. | Method of etching dielectric layer using a plasma generated from a mixture of flourohydrocarbon gas, NH3-genrating gas, and carbon-oxygen containing gas |
| US6039888A (en) * | 1996-10-11 | 2000-03-21 | Lg Semicon Co., Ltd. | Method of etching an organic anti-reflective coating |
| CN1294754A (en) * | 1999-02-26 | 2001-05-09 | 特利康控股有限公司 | Method of processing polymer layer |
| US20010024769A1 (en) * | 2000-02-08 | 2001-09-27 | Kevin Donoghue | Method for removing photoresist and residues from semiconductor device surfaces |
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