CN100520518C - Micro-reflection type display substrate and its manufacturing method - Google Patents
Micro-reflection type display substrate and its manufacturing method Download PDFInfo
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- CN100520518C CN100520518C CNB2007101618656A CN200710161865A CN100520518C CN 100520518 C CN100520518 C CN 100520518C CN B2007101618656 A CNB2007101618656 A CN B2007101618656A CN 200710161865 A CN200710161865 A CN 200710161865A CN 100520518 C CN100520518 C CN 100520518C
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Abstract
A tiny reflection type display base plate and its fabrication method, the fabrication method includes the following steps at least: firstly, provides the base plate which has multiple image element area, each image element area includes transmission area and memory capacitance area. Then forms multiple projection in the memory capacitance area of each image element area, they are separated, the base and the bevel edge of each projection has included angle theta, whose range is among 1-30 degree. The first capacitance electrode is formed in the base in the memory capacitance area of each image element area, and the first capacitance electrode covers with the multiple projections. And it forms the first insulation layer in the first capacitance electrode of each image element area. At last, the memory capacitance area of each image element forms the second capacitance electrode in the first insulation layer, forms the reflection structure. This invention can improve the reflection effect, it will not lose the placket area of the base, to realize the optimal recognizable quality in the ambient light.
Description
Technical field
The present invention relates to a kind of micro-reflection type display substrate and manufacture method thereof, and particularly relate to micro-reflection type display substrate and manufacture method thereof by the concaveconvex structure reflection in memory capacitance district.
Background technology
(Liquid Crystal Display LCD) can be divided into transmission-type (Transmissive), reflective (Reflective) and three kinds of fundamental types of Transflective (Tranflective) according to the reflection mode to LCD Panel.The transmissive liquid crystal display screen shows that to reach transmission-type its advantage is under ordinary ray and half-light line, still can keep good display effect via back light, so the next identification displaying contents that is difficult for of sunlight out of doors.The reflection type liquid crystal display screen need not add light source, but therefore the light around the environment for use all have good display effect under the well-lighted environment in the external world, and is right in the next identification displaying contents that is difficult for of the environment of extraneous insufficient light.The Transflective LCD Panel is then in conjunction with transmission-type and reflective both advantage.
Semi-transmission semi-reflection LCD, compared to transmissive display, its advantage is that technology simply and not needs additionally to increase photomask and can allow transmissive display have reflection mode, shows interior identifiability to promote the high light lower panel.
Please be simultaneously with reference to Figure 1A and Figure 1B.Figure 1A illustrates the dot structure vertical view of traditional Transflective display element, and Figure 1B illustrates among Figure 1A the sectional view along 1B-1B ' profile line.Wherein Figure 1A only illustrates the single pixel region on the display element substrate.Dot structure 100 is formed on the substrate 110.Dot structure 100 comprises several scan signal lines SL, several data signal lines DL, common electrode lines CL, first insulation course 120, second insulation course 130 and pixel electrode 140.Intersect vertically with the form of array via a plurality of scan signal line SL and a plurality of data signal line DL and to form and to define a plurality of pixel regions 10.Each pixel region 10 comprises transmission area 14 and memory capacitance district 12.In memory capacitance district 12, common electrode lines CL is arranged on the substrate 110.First insulation course 120 is covered on the common electrode lines CL, and data signal line DL is arranged on first insulation course 120.Second insulation course 130 is arranged on first insulation course 120, and this second insulation course 130 has opening 130a, and pixel electrode 140 fills up this opening and transmission area 14 and memory capacitance district 12 are electrically connected.
Therefore, in this Transflective display, be that planar structure is as reflecting electrode 16 with capacitance electrode in the memory capacitance district 12.In Figure 1B, via transmission area 14 transmissions, extraneous light L2 is then via reflecting electrode 16 reflections from light L1 that back light sent.But owing to the reflection efficiency of reflecting electrode 16 extraneous light L2 for planar structure makes is not good, the extraneous light L2 of reflection also can't reach the optimal viewing angle of human eye.
Summary of the invention
The present invention relates to a kind of micro-reflection type display substrate and manufacture method thereof, memory capacitance district by the concaveconvex structure that has is as reflector space, but and make surround lighting intelligent's after the reflection of this concaveconvex structure optimal viewing angle, and the aperture area that can not lose substrate reaches the best the distinguishing property of panel under surround lighting.
According to a first aspect of the invention, propose a kind of manufacture method of micro-reflection type display substrate, the method may further comprise the steps.At first, provide substrate, and substrate has a plurality of pixel regions, each pixel region comprises transmission area and memory capacitance district.Then, form on the substrate of a plurality of projections in the memory capacitance district of each pixel region, wherein these a plurality of projections are separate, and the bottom of each projection and hypotenuse then have angle theta, and the scope of angle theta is between the 1-30 degree.Then, in the memory capacitance district of each pixel region, form first capacitance electrode on substrate, and first capacitance electrode covers these a plurality of projections.Then, form first insulation course on first capacitance electrode of each pixel region.Then, in the memory capacitance district of each pixel region, form second capacitance electrode on first insulation course.
Aforesaid manufacture method, wherein forming should be a plurality of during projection, makes the spacing of being separated by bottom the two adjacent projections, and the scope of this spacing is at 1～10 micron (μ m).
Aforesaid manufacture method when wherein forming this a plurality of projection, makes bottom width d, height t and this angle theta of each projection be the relation of d ≧ 2 * t * Cot θ.
Aforesaid manufacture method, wherein the mode with this substrate of etching forms this a plurality of projections.
Aforesaid manufacture method wherein after the step of this substrate is provided, form dielectric layer on this substrate, and this dielectric layer of patterning is to form these a plurality of projections.
Aforesaid manufacture method when wherein forming the step of this first capacitance electrode in this memory capacitance district of each pixel region, forms gate electrode and scan signal line simultaneously on this substrate of this transmission area.
Aforesaid manufacture method, when wherein forming the step of this first insulation course on this first capacitance electrode of each pixel region, this first insulation course covers this gate electrode and the scan signal line of this transmission area.
Aforesaid manufacture method, after wherein in this memory capacitance district of each pixel region, forming the step of this second capacitance electrode, also comprise: form second insulation course on this second capacitance electrode in this memory capacitance district and on this first insulation course of this transmission area.
Aforesaid manufacture method, also comprise form hole in this second insulation course in this memory capacitance district to expose the part surface of this second capacitance electrode; And form pixel electrode on this second insulation course of this transmission area, and this pixel electrode fills up this hole so that this transmission area and this memory capacitance district electrically connect.
According to a second aspect of the invention, a kind of micro-reflection type display substrate is proposed.Substrate has a plurality of pixel regions, and each pixel region comprises transmission area and memory capacitance district, wherein comprises concaveconvex structure, first capacitance electrode, first insulation course and second capacitance electrode in the memory capacitance district.Concaveconvex structure comprises a plurality of projections, and these a plurality of projections are formed on the substrate separatedly.The bottom and the hypotenuse of each projection have angle, and the scope of angle is between the 1-30 degree.First capacitance electrode is formed on the substrate and covers concaveconvex structure.First insulation course is formed on first capacitance electrode.Second capacitance electrode is formed on first insulation course.
Aforesaid micro-reflection type display substrate, the bottom of two wherein adjacent projections has a spacing, and the scope of this spacing is 1～10 micron.
Aforesaid micro-reflection type display substrate, wherein the bottom width d of these a plurality of projections, height t and this angle theta are the relation of d ≧ 2 * t * Cot θ.
Aforesaid micro-reflection type display substrate, wherein these a plurality of projections and this substrate are one-body molded via etched mode.
Aforesaid micro-reflection type display substrate, wherein these a plurality of projections comprise by pattern dielectric layer and being formed.
Aforesaid micro-reflection type display substrate also comprises: gate electrode is positioned on this substrate of this transmission area; And scan signal line, be positioned on this substrate, and connect this gate electrode.
Aforesaid micro-reflection type display substrate, wherein this first insulation course is positioned on this substrate and covers this gate electrode of this transmission area, this first capacitance electrode and this scan signal line in this memory capacitance district.
Aforesaid micro-reflection type display substrate also comprises: second insulation course is positioned on this second capacitance electrode in this memory capacitance district and on this first insulation course of this transmission area.
Aforesaid micro-reflection type display substrate, wherein this second insulation course in this memory capacitance district has hole, and this hole makes the part surface of this second capacitance electrode exposed.
Aforesaid micro-reflection type display substrate wherein also comprises: pixel electrode be positioned on this second insulation course of this transmission area, and this transmission area and this memory capacitance district electrically connects by this pixel electrode.
According to a third aspect of the invention we, reintroduce a kind of micro-reflection type display substrate, comprise substrate, a plurality of scan signal line, a plurality of data signal line and a plurality of thin film transistor (TFT).A plurality of scan signal lines and a plurality of data signal line intersect vertically with the form of array, and these a plurality of scan signal lines define a plurality of pixel regions with these a plurality of data signal lines on this substrate, each pixel region is defined by adjacent a pair of scan signal line and adjacent a pair of data signal line, each pixel region comprises transmission area and memory capacitance district, and has thin film transistor (TFT) in each pixel region.Comprise concaveconvex structure, first capacitance electrode, first insulation course and second capacitance electrode in the memory capacitance district.Concaveconvex structure comprises a plurality of projections, and these a plurality of projections are formed on the substrate separatedly, and the bottom and the hypotenuse of each projection have angle theta, and the scope of angle theta is between the 1-30 degree.First capacitance electrode is formed on the substrate and covers this concaveconvex structure.First insulation course is formed on first capacitance electrode.Second capacitance electrode is formed on first insulation course.
Micro-reflection type display substrate of the present invention and manufacture method thereof.Form concaveconvex structure in the memory capacitance district of each pixel region, and through having the hypotenuse of angle theta in the concaveconvex structure thus, and make extraneous light after this hypotenuse reflection, but the optimal viewing angle of intelligent's eye.So, micro-reflection type display substrate can have reflector space and promote reflection efficiency in the memory capacitance district, and does not lose the aperture area of its substrate, reaches the best the distinguishing property of panel under surround lighting.
For foregoing of the present invention can be become apparent, hereinafter the spy enumerates preferred embodiment, and conjunction with figs., elaborates.
Description of drawings
Figure 1A illustrates the dot structure vertical view of traditional Transflective display element;
Figure 1B illustrates among Figure 1A the sectional view along 1B-1B ' profile line;
Fig. 2 A illustrates the attached view according to the micro-reflection type display substrate of first embodiment of the invention;
Fig. 2 B illustrate according among Fig. 2 A along the sectional view of 2B-2B ' profile line;
Fig. 3 A～Fig. 3 E illustrates according to the sectional view along the formation method of 2A figure section line 3B-3B '; And
Fig. 4 illustrates the sectional view of the micro-reflection type display substrate of the shown second embodiment of the invention of 2B-2B ' profile line in Fig. 2 A.
Wherein, description of reference numerals is as follows:
Cst: memory capacitance
CL, CO: common electrode lines
D: bottom width
DT: data signal line
L1, L4: light
L2, L3, L5: extraneous light
SL1, SC: scan signal line
T: highly
W: spacing
θ: angle
10, PR: pixel region
12, CR: memory capacitance district
14, TR: transmission area
16: reflecting electrode
100: dot structure
110,202: substrate
120,224: the first insulation courses
130,228: the second insulation courses
130a: opening
140,240: pixel electrode
200: micro-reflection type display substrate
210: thin film transistor (TFT)
210a: source electrode
210b: grid
210c: drain electrode
220,220 ': projection
222: the first capacitance electrodes
226: the second capacitance electrodes
228: the second insulation courses
228a: hole
230,230 ': concaveconvex structure
Embodiment
First and second embodiment are below proposed as explanation of the present invention.Yet display element that this a plurality of embodiment proposed and step be the usefulness for illustrating only, can't do limit to the scope of desire protection of the present invention.Moreover the diagram among the embodiment is also omitted unnecessary element, in order to clear demonstration technical characterstic of the present invention.
First embodiment
Please refer to Fig. 2 A, it illustrates the vertical view according to the micro-reflection type display substrate of first embodiment of the invention.Wherein Fig. 2 A only illustrates single pixel region.A kind of micro-reflection type display substrate 200 comprises substrate 202, a plurality of scan signal line SC, a plurality of data signal line DT, a plurality of thin film transistor (TFT) 210.A plurality of scan signal line SC and a plurality of data signal line DT intersect vertically with the form of array, and these a plurality of scan signal line SC and these a plurality of data signal line DT define a plurality of pixel region PR on substrate 202, and each pixel region PR is defined by adjacent a pair of scan signal line SC and adjacent a pair of data signal line DT.
Each pixel region PR comprises common electrode lines CO and thin film transistor (TFT) 210.Common electrode lines CO is set in parallel between the adjacent a pair of scan signal line SC.Thin film transistor (TFT) 210 comprises grid 210b, source electrode 210a and drain electrode 210c.Grid 210b is formed on the substrate 202.Source electrode 210a and drain electrode 210c are formed on first insulation course 224 and with a raceway groove and separate.Each pixel region PR comprises transmission area TR and memory capacitance district CR.
Please refer to Fig. 2 B, its illustrate according among Fig. 2 A along the sectional view of 2B-2B ' profile line.Memory capacitance district CR comprises concaveconvex structure 230, first capacitance electrode 222, first insulation course 224 and second capacitance electrode 226 in each pixel region PR.Concaveconvex structure 230 comprises a plurality of projections 220, and these a plurality of projections 220 are formed on the substrate 202 separatedly, and the bottom of each projection 220 and hypotenuse have angle theta, and the scope of angle theta is between the 1-30 degree.First capacitance electrode 222 is formed on the substrate 202 and covers this concaveconvex structure 230.First insulation course 224 is formed on first capacitance electrode 222.Second capacitance electrode 226 is formed on first insulation course 224.
Below describe the formation method of present embodiment in detail with the diagrammatic cross-section of Fig. 3 A to Fig. 3 E, Fig. 3 A～Fig. 3 E illustrates according to the sectional view along the formation method of Fig. 2 A section line 3B-3B '.
Please refer to Fig. 3 A, substrate 202 is provided, substrate 202 has a plurality of pixel region PR, and each pixel region PR comprises transmission area TR and memory capacitance district CR.Then, in memory capacitance district CR, form a plurality of projections 220, to form concaveconvex structure 230.In the present embodiment, the formation method of a plurality of projections 220 is to form dielectric layer earlier in substrate 202, this dielectric layer of patterning and form a plurality of projections 220 again, wherein these a plurality of projections 220 are separated to each other mutually, and 220 of each projection 220 and projections have spacing w, and this spacing w scope is between 1～10 μ m.The bottom of each projection 220 and hypotenuse then have angle theta, and the scope of angle theta is between the 1-30 degree, and bottom width d, height t and the angle theta of each projection 220 for example be the relation of d ≧ 2 * t * Cot θ, and preferably to close be d=2 * t * Cot θ.When the pass of bottom width d, height t and the angle theta of projection 220 is d〉2 * t * Cot θ, the sectional view of these a plurality of projections 220 is ladder type as shown in Figure 3A.And when the pass of bottom width d, height t and the angle theta of projection 220 was d=2 * t * Cot θ, these a plurality of projection 220 sections just presented triangular form.In addition, the material of dielectric layer for example is Inorganic Dielectric Material or organic dielectric materials.The arrangement mode that projection 220 forms in the concaveconvex structure 230 is not limited and is looked practical situations, can take asymmetric can take symmetrical expression yet, maybe can take periodically or acyclic aligning method.
Then, please refer to Fig. 3 B.In the memory capacitance district of each pixel region PR CR, form first capacitance electrode 222 on substrate 202, and first capacitance electrode 222 covers these a plurality of projections 220.In addition, when forming first capacitance electrode 222, also form a plurality of scan signal line SC on substrate 202 simultaneously at transmission area TR, and grid 210b is formed at simultaneously on the substrate 202 also.In addition, because Fig. 3 B illustrates the side cutaway view of 2B-2B ' profile line in Fig. 2 A, so grid 210b then do not have and is illustrated in this sectional view, and the diagram of grid 210b then please refer to Fig. 2 A.Therefore, in the present embodiment, first capacitance electrode 222, scan signal line SC and grid 210b finish in same procedure simultaneously, and its material for example is a metal material.
Then, please refer to Fig. 3 C.Form first insulation course 224 on each pixel region PR first capacitance electrode 222.In addition, when forming first insulation course 224 on first capacitance electrode 222, first insulation course 224 covers the scan signal line SC of transmission area TR simultaneously.Then, in the memory capacitance district of each pixel region PR CR, form second capacitance electrode 226 on first insulation course 224.Because, have first insulation course 224 between first capacitance electrode 222 and second capacitance electrode 226, therefore form memory capacitance Cst by first capacitance electrode 222, first insulation course 224 and second capacitance electrode 226.Therefore, when the data-signal of data signal line DT was passed to source electrode 210a, the pixel voltage relevant with data-signal can be stored among the memory capacitance Cst.
Referring again to Fig. 2 A.In addition, when forming second capacitance electrode 226 in first insulation course 224, a plurality of data signal line DT, source electrode 210a and drain electrode 210c also are formed on first insulation course 224 simultaneously.In addition by the side cutaway view that 2B-2B ' profile line in Fig. 2 A is shown at Fig. 3 C, so data signal line DT, source electrode 210a and drain electrode 210c can't be illustrated among Fig. 3 C, and its diagram then please refer to Fig. 2 A.When a plurality of data signal line DT formed, a plurality of scan signal line SC and a plurality of data signal line DT intersected vertically with the form of array, and define a plurality of pixel region PR on substrate 202.And each pixel region PR is defined by adjacent a pair of scan signal line SC and adjacent a pair of data signal line DT.In the present embodiment, each pixel region PR has thin film transistor (TFT) 210, and thin film transistor (TFT) 210 is formed with grid 210b, first insulation course 224 that is covered in grid 210b, source electrode 210a and drain electrode 210c, wherein is spaced from each other with raceway groove between source electrode 210a and drain electrode 210c.Must it should be noted that in addition in the present embodiment, second capacitance electrode 226, data signal line DT, source electrode 210a and drain electrode 210c finish simultaneously, and its material for example is a metal material in same procedure.
Then, please refer to Fig. 3 D.At first, form second insulation course 228 on second capacitance electrode 226 of memory capacitance district CR and on first insulation course 224 of transmission area TR.And form hole 228a in second insulation course 228 of memory capacitance district CR to expose the part surface of second capacitance electrode 226.
Then, please refer to Fig. 3 E.Form pixel electrode 240 on second insulation course 228 of transmission area TR, and pixel electrode 240 fills up hole 228a so that transmission area TR and memory capacitance district CR electrically connect.In the present embodiment, pixel electrode 240 for example be transparent conductive material such as tin indium oxide (Indium TinOxide, ITO)
In the present embodiment, the memory capacitance district CR of substrate 202 has concaveconvex structure 230, and this concaveconvex structure 230 has a plurality of projections 220, and make first insulation course 224, first capacitance electrode 222 and second capacitance electrode 226 of follow-up covering on it all thereby have the concavo-convex profile of same fluctuating, show as Fig. 3 E.Bottom and the hypotenuse of learning these a plurality of projections 220 in the above-described embodiments have angle theta, the scope of this angle theta is between the 1-30 degree, and make extraneous light L3 after this projection 220 hypotenuses reflection, but the optimal viewing angle of intelligent's eye, and the light L4 that launches from the back light of backlight module also can be through transmission area TR transmission.Thus, this micro-reflection type display substrate 200 can have reflector space and promote reflection efficiency at memory capacitance district CR, and does not lose the aperture area of substrate 202, reaches the best the distinguishing property of panel under surround lighting.
Second embodiment
Second embodiment and first its difference of embodiment structure are: first embodiment is that to form concaveconvex structure 230, the second embodiment in the pattern dielectric layer mode then be that substrate 202 modes with etching glass form concaveconvex structure 230 '.Its vertical view is Fig. 2 A in the same manner, and as described in first embodiment, so its formation method, structure, relevant material and design conditions no longer repeat to give unnecessary details at this.
Please refer to Fig. 4, it illustrates the sectional view of the micro-reflection type display substrate of the shown second embodiment of the invention of 2B-2B ' profile line in Fig. 2 A.The substrate 202 (for example be glass substrate) of the formation method of a plurality of projections 220 ' for being provided forms a plurality of projections 220 ' via etched mode in the present embodiment, and wherein these a plurality of projections 220 ' are one-body molded with substrate 202.And these a plurality of projections 220 ' also satisfy the design conditions described in first embodiment, so that extraneous light L5 is after the hypotenuse reflection of this projection 220 ', but the also optimal viewing angle of intelligent's eye.Afterwards, follow-up concerned process steps is then identical with first embodiment, herein just repeated description no longer.
Micro-reflection type display substrate that the above embodiment of the present invention disclosed and manufacture method thereof.Form concaveconvex structure in the memory capacitance district of each pixel region, and through having the hypotenuse of angle theta in the concaveconvex structure thus, and make extraneous light after this hypotenuse reflection, but the optimal viewing angle of intelligent's eye.So, micro-reflection type display substrate can have reflector space and promote reflection efficiency in the memory capacitance district, and does not lose the aperture area of its substrate, reaches the best the distinguishing property of panel under surround lighting.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The ordinary technical staff in the technical field of the invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking the scope that claim defined of enclosing.
Claims (19)
1. the manufacture method of a micro-reflection type display substrate comprises:
Substrate is provided, and this substrate has a plurality of pixel regions, and each pixel region comprises transmission area and memory capacitance district;
Form on a plurality of projections this substrate in this memory capacitance district of each pixel region, and these a plurality of projections are separate, the bottom of each projection and hypotenuse then have angle theta, and the scope of this angle theta is between the 1-30 degree;
In this memory capacitance district of each pixel region, form first capacitance electrode on this substrate, and this first capacitance electrode covers these a plurality of projections;
Form first insulation course on this first capacitance electrode of each pixel region; And
In this memory capacitance district of each pixel region, form second capacitance electrode on this first insulation course.
2. manufacture method as claimed in claim 1, wherein forming should be a plurality of during projection, makes the spacing of being separated by bottom the two adjacent projections, and the scope of this spacing is at 1～10 micron.
3. manufacture method as claimed in claim 1 when wherein forming this a plurality of projection, makes bottom width d, height t and this angle theta of each projection be the relation of d ≧ 2 * t * Cot θ.
4. manufacture method as claimed in claim 1, wherein the mode with this substrate of etching forms this a plurality of projections.
5. manufacture method as claimed in claim 1 wherein after the step of this substrate is provided, form dielectric layer on this substrate, and this dielectric layer of patterning is to form these a plurality of projections.
6. manufacture method as claimed in claim 1 when wherein forming the step of this first capacitance electrode in this memory capacitance district of each pixel region, forms gate electrode and scan signal line simultaneously on this substrate of this transmission area.
7. manufacture method as claimed in claim 6, when wherein forming the step of this first insulation course on this first capacitance electrode of each pixel region, this first insulation course covers this gate electrode and the scan signal line of this transmission area.
8. manufacture method as claimed in claim 7 wherein after the step of this second capacitance electrode of formation, also comprises in this memory capacitance district of each pixel region:
Form second insulation course on this second capacitance electrode in this memory capacitance district and on this first insulation course of this transmission area.
9. manufacture method as claimed in claim 8 also comprises:
Form hole in this second insulation course in this memory capacitance district to expose the part surface of this second capacitance electrode; And
Form pixel electrode on this second insulation course of this transmission area, and this pixel electrode fills up this hole so that this transmission area and this memory capacitance district electrically connect.
10. micro-reflection type display substrate comprises:
Substrate has a plurality of pixel regions, and each pixel region comprises transmission area and memory capacitance district, comprises in this memory capacitance district:
Concaveconvex structure comprises:
A plurality of projections, and these a plurality of projections are formed on this substrate separatedly, and the bottom and the hypotenuse of each projection have angle theta, and the scope of this angle theta is between the 1-30 degree;
First capacitance electrode is formed on this substrate and covers this concaveconvex structure;
First insulation course is formed on this first capacitance electrode; And
Second capacitance electrode is formed on this first insulation course.
11. micro-reflection type display substrate as claimed in claim 10, the bottom of two wherein adjacent projections has a spacing, and the scope of this spacing is 1～10 micron.
12. micro-reflection type display substrate as claimed in claim 10, wherein the bottom width d of these a plurality of projections, height t and this angle theta are the relation of d ≧ 2 * t * Cot θ.
13. micro-reflection type display substrate as claimed in claim 10, wherein these a plurality of projections and this substrate are one-body molded via etched mode.
14. micro-reflection type display substrate as claimed in claim 10, wherein these a plurality of projections comprise by pattern dielectric layer and being formed.
15. micro-reflection type display substrate as claimed in claim 10 also comprises:
Gate electrode is positioned on this substrate of this transmission area; And
Scan signal line is positioned on this substrate, and connects this gate electrode.
16. micro-reflection type display substrate as claimed in claim 15, wherein this first insulation course is positioned on this substrate and covers this gate electrode of this transmission area, this first capacitance electrode and this scan signal line in this memory capacitance district.
17. micro-reflection type display substrate as claimed in claim 16 also comprises:
Second insulation course is positioned on this second capacitance electrode in this memory capacitance district and on this first insulation course of this transmission area.
18. micro-reflection type display substrate as claimed in claim 17, wherein this second insulation course in this memory capacitance district has hole, and this hole makes the part surface of this second capacitance electrode exposed.
19. micro-reflection type display substrate as claimed in claim 18 wherein also comprises:
Pixel electrode is positioned on this second insulation course of this transmission area, and this transmission area and this memory capacitance district electrically connect by this pixel electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007101618656A CN100520518C (en) | 2007-09-24 | 2007-09-24 | Micro-reflection type display substrate and its manufacturing method |
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| CNB2007101618656A CN100520518C (en) | 2007-09-24 | 2007-09-24 | Micro-reflection type display substrate and its manufacturing method |
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| CN101236933B (en) * | 2008-03-04 | 2010-12-01 | 友达光电股份有限公司 | Display panel and its method |
| CN102290398B (en) * | 2011-07-26 | 2013-04-24 | 深圳市华星光电技术有限公司 | Storage capacitor framework and making method thereof, and pixel structure |
| CN110189642B (en) * | 2018-02-22 | 2021-10-26 | 和鑫光电股份有限公司 | Display device |
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