CN100510167C - Inverse baking deposition structure in chemical vapor deposition equipment for metal organic matter - Google Patents
Inverse baking deposition structure in chemical vapor deposition equipment for metal organic matter Download PDFInfo
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- CN100510167C CN100510167C CNB2004101018865A CN200410101886A CN100510167C CN 100510167 C CN100510167 C CN 100510167C CN B2004101018865 A CNB2004101018865 A CN B2004101018865A CN 200410101886 A CN200410101886 A CN 200410101886A CN 100510167 C CN100510167 C CN 100510167C
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Abstract
For metal organic chemical vapor deposition (MOCVD) apparatus, especially that for production, when firing the graphite base after the growth of materials, deposits in reaction room especially that on the graphite base is heated, vaporized, and deposited again on the ceiling again as it arrives there due to the temperature difference, which may cause a series of disadvantages like decrease in quality of epitaxy wafers, elongation of sanitization and shutdown time for MOCVD apparatus and raw materials waste. This invention provides a converse firing deposition structure, with which deposition of raw materials on the ceiling due to the firing of graphite base is effectively avoided, raw materials loss is reduced, the shutdown time for the apparatus is shortened and the total efficiency is promoted.
Description
Technical field
The present invention relates to semiconductor devices and make the field, particularly relate to the inverse baking deposition structure in the MOCVD equipment.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) is since nineteen sixties at first proposes, through 70 development to the eighties, the nineties has become the core growth technology of photoelectron materials such as gallium arsenide, indium phosphide preparation, is used widely in photoelectron material such as gallium arsenide, indium phosphide and device production at present.Metal-organic chemical vapor deposition equipment (MOCVD) is the main stream approach of preparation gallium nitride light-emitting diode and laser diode epitaxial wafer simultaneously, from the gallium nitride epitaxial slice and the leading indicators such as the performance of device and production cost of growth, also there is not other method can be by comparison.
Metal-organic chemical vapor deposition equipment (MOCVD) equipment principle is that different starting material arrive substrate by the tuyere pipeline, (decide according to the differing materials requirement) under 200-2000 celsius temperatures usually, react, and grow needed thin-film material.Yet, as shown in Figure 1, starting material also can deposit on reaction chamber perisporium and graphite base 4 in the sedimentary while on the substrate 3, in order to improve the quality of material, after every stove thin-film material growth is finished, must under higher temperature, toast graphite base, make the material evaporation that is deposited on reaction chamber perisporium and the graphite base, along with hydrogen is discharged reaction chamber.But in bake process, certainly will have a spot of material and run into ceiling 1 in the reaction chamber in the uphill process in evaporation, because the ceiling temperature is relatively low, the higher gas of temperature is met cold will being deposited on the ceiling, produces settling 2.These settlings can produce following disadvantageous effect: (i) deposit on the ceiling 2 all may come off at any time on substrate 3, reduces quality of materials; (ii), prolonged the stop time of equipment, the duration of service of having reduced equipment owing to often need to clean ceiling deposit 2; (iii) quicken starting material and on ceiling, deposit, the effective consumption starting material.Starting material generally are very difficult in reaction chamber ceiling deposition directly, but in case the surface sediments of having grown on the reaction chamber ceiling just is easy to more thicker settlings of growing on the later ceiling.These settlings are cost with the consumption of raw material.
Summary of the invention
The objective of the invention is to stop the deposit of starting material on the reaction chamber ceiling in the baking graphite base process, reduce consequent deposit, improve quality of materials and reduce raw-material loss, reduce the stop time of equipment, improve the service efficiency of equipment.
For achieving the above object, technical solution of the present invention provides the inverse baking deposition structure in a kind of chemical vapor deposition equipment for metal organic matter, contains reaction chamber, reaction chamber ceiling, graphite base; Its described reaction chamber ceiling over against the part of graphite base, has a breach, and breach is provided with the movable quartz plate of edging greater than the area of graphite base in the breach, and the movable quartz plate of edging is one or more.
Described inverse baking deposition structure, the movable quartz plate of its described edging is one or more, when being one, when growth material, cover the movable quartz plate of edging on the breach, during the baking graphite base, the movable quartz plate of edging is taken away, made breach and exterior, settling on the graphite base, risen by thermal evaporation,, and do not cause the deposit of starting material on the reaction chamber ceiling by the breach volatilization; During for polylith, when growth material, cover the movable quartz plate of an edging on the breach, during the baking graphite base, change the movable quartz plate of another piece edging and cover on the breach or do not put the movable quartz plate of edging, make breach and exterior.
Described inverse baking deposition structure, it is suitable for the monolithic type metal-organic chemical vapor deposition equipment.
Described inverse baking deposition structure contains reaction chamber, reaction chamber ceiling, graphite base; It has a quartz baffle between graphite base and reaction chamber ceiling, during the baking graphite base, quartz baffle separates graphite base and reaction chamber ceiling, avoids the deposit of starting material on the reaction chamber ceiling.
Described inverse baking deposition structure, its described quartz baffle is one or more, is installed with in the mode that can remove.
Described inverse baking deposition structure, its described quartz baffle down either side and two quartzy slide bars are dynamically connected, and can slide on quartzy slide bar; Two quartzy slide bars are located between graphite base and the reaction chamber ceiling both sides above graphite base.
Described inverse baking deposition structure, its described quartz baffle both sides, suitable with the slot of reaction chamber ceiling lower surface both sides.
Described inverse baking deposition structure, during its described baking graphite base, one or more quartz baffle slides between graphite base and the reaction chamber ceiling along quartzy slide bar, and graphite base and reaction chamber ceiling are separated, and avoids the deposit of starting material on the reaction chamber ceiling; When growth material, one or more quartz baffle slides to outside the zone between graphite base and the ceiling along quartzy slide bar, does not influence the normal growth of material.
Described inverse baking deposition structure during its described baking graphite base, inserts a quartz baffle along slot, graphite base and reaction chamber ceiling are separated, and avoids the deposit of starting material on the reaction chamber ceiling; When growth material, quartz baffle is taken out along slot, do not influence the normal growth of material.
Described inverse baking deposition structure, the distance between its described two quartzy slide bars are greater than the size of graphite base and ceiling, and when growth material, quartzy slide bar does not influence the interior gas of reaction chamber and the distribution of temperature.
Described inverse baking deposition structure is characterized in that: be suitable for multi-disc type or monolithic type metal-organic chemical vapor deposition equipment.
Described inverse baking deposition structure, its described reaction chamber ceiling, edging portable plate, baffle plate, slide bar and slot are for quartzy, pottery, heating resisting metal or there is the stainless steel that adds the water-cooled interlayer to make.
The present invention has the following advantages:
(1) in the time of can avoiding toasting graphite, the settling settling on the graphite base be particularly risen by thermal evaporation in the reaction chamber, is deposited on the ceiling.
(2) reduce that settling on the reaction chamber ceiling comes off and the quality of materials decline probability that causes.Settling on the ceiling can come off sooner or later, falls on substrate, influences the material growth.Even these settlings are " bulk comes off " but come off with " dust " form not, also can reduce the quality of epitaxial material.
(3) reaction chamber need not frequent cleaning, reduces the stop time of causing owing to cleaning reaction chamber ceiling.
(4) stop starting material on the reaction chamber ceiling, to deposit, reduce waste of raw materials.The reaction chamber ceiling generally is by materials processing one-tenth and smooth surfaces such as quartz or stainless steels.If growth one deck buffer layer on the reaction chamber ceiling is not difficult in direct growth on the ceiling so.As long as on the reaction chamber ceiling, grown a surface sediments, just be easy to more thicker settlings of growing on the later ceiling, these settlings are cost with the consumption of raw material.The present invention has effectively avoided reducing waste of raw materials because the baking reaction chamber ceiling that graphite base caused deposition just is difficult in direct growth on the ceiling in process of growth.
Description of drawings
Fig. 1 be starting material the sedimentary while on the substrate also can be on reaction chamber perisporium and graphite base sedimentary synoptic diagram.
Fig. 2 is the synoptic diagram of first embodiment of the invention.
Fig. 3 is the synoptic diagram of second embodiment of the invention.
Fig. 4 is the synoptic diagram of third embodiment of the invention.
Fig. 5 is the synoptic diagram of fourth embodiment of the invention
Embodiment
The present invention has following two kinds of embodiments:
(1) active catch is board-like---in reaction chamber, increase one or more movable quartz baffle 6.When growth material, reaction chamber is removed or extracted out to movable quartz baffle 6; And when baking graphite base 4, movable quartz baffle 6 is placed between graphite base 4 and the reaction chamber ceiling 1, stop the volatile matter on the graphite base 4 to be deposited on the ceiling 1.
(2) movable ceiling formula---reaction chamber ceiling 1 is an active, and one or more is arranged.As be polylith reaction chamber ceiling, add that when growth material wherein one does not have sedimental reaction chamber ceiling 1a; And when baking graphite base 4, adding the movable ceiling 1b of another piece, the volatile matter on the graphite base 4 is deposited on this piece ceiling 1b.Also can not add movable ceiling 1b at baking graphite base 4, open wide reaction chamber, the settling on the graphite base 4 is evaporate into beyond the reaction chamber.
For meaning of the present invention is described better, below the vocabulary of being mentioned is further explained.
Said " MOCVD " is the abbreviation of Metal-Organic Chemical Vapor Deposition, and Chinese is translated into " metal-organic chemical vapor deposition equipment ".This equipment also has another name to be called MOVPE, is the abbreviation of Metal-Organic Vapor Phase Epitaxy, and Chinese is translated into " gas phase epitaxy of metal organic compound ".More than both are same material object, explanation hereby.
Said " starting material " refer to and utilize MOCVD equipment and the method thin-film material of growing required, and participate in chemical reaction and contain the material of this raw material composition in resultant.Refer specifically to metallorganics (MO source) and gas raw material.
Said " substrate " or " substrate " refer to the used substrate of growing film material, and thin-film material is grown in the above.
Said " reaction chamber " refers to the zone at growing film material place.Because with MOCVD growing film material is a chemical reaction process substantially, its region is reaction chamber.
Said " reaction chamber ceiling " refers to a uppermost plane in the reaction chamber, as the ceiling in house.
The stereographic map of inverse baking deposition structure first embodiment in a kind of chemical vapor deposition equipment for metal organic matter of the present invention, as shown in Figure 2.This structure is exactly that installation can active quartz baffle 6 below the ceiling 1 in metal-organic chemical vapor deposition equipment (MOCVD) equipment.In growth material, quartz baffle 6 moves on between graphite base 4 and the ceiling 1 beyond the zone; And when baking, quartz baffle 6 just moves on to below the ceiling 1, separates ceiling 1 and graphite base 4, and the settling that is produced when baking graphite base 4 just volatilizees and is deposited on the quartz baffle 6 like this, rather than is deposited on the ceiling 1.The quality of materials decline probability that so just can reduce deposit on the reaction chamber ceiling to come off and cause perhaps reduces the stop time of causing owing to cleaning reaction chamber ceiling 1, and reduces raw-material effective consumption.The size of quartz baffle 6 is greater than the size of ceiling 1, like this could the more effective deposition of avoiding on the ceiling 1.The manner of quartz baffle 6 has multiple, as both sides above graphite base 4 two quartzy slide bars 5 is arranged, and quartz baffle 6 can slide on quartzy slide bar 5 etc.Distance between two quartzy slide bars 5 is greater than the size of graphite base 4 and ceiling 1, and like this when growth material, quartz baffle 6 and quartzy slide bar 5 can not influence the gas in the reaction chamber and the distribution of temperature.And quartz baffle 6 can be that a big quartz plate also can be two little quartz plates.
First embodiment is at multi-disc shaped metal organic chemical vapor deposition equipment.The situation that shown in Figure 2 is when baking graphite, quartz baffle 6 is in below the ceiling 1, has separated ceiling and graphite base 4.Baking is after graphite base 4 finishes, just can slide into zone between graphite base 4 and the ceiling 1 to quartz baffle 6 along quartzy slide bar 5 outside, do not influence the normal growth of material.
Because present embodiment is a quartz baffle 6, when material is grown, quartz baffle 6 need be slided into a side, so need bigger reaction chamber.
Second embodiment also is at multi-disc shaped metal organic chemical vapor deposition equipment, and different is that two quartz baffle 6a, 6b are arranged.Shown in Figure 3 is the situation that quartz baffle 6 is sliding.In growth material, two quartz baffle 6a, 6b can slide into both sides respectively, so reaction chamber can be smaller relatively.
The 3rd embodiment is at the monolithic type metal-organic chemical vapor deposition equipment.For single-chip device, starting material can not vertically spray to substrate with carrier gas, but flow to substrate from the side, as shown in Figure 4.One breach is arranged in the middle of the ceiling 1, and breach size and graphite base are measure-alike.The 7th, the movable quartz plate of good sealing performance edging, the two movable quartz plate 7a of edging, 7b replace use.Cover on breach with an edging activity quartz plate 7b during graphite base 4 in baking and (also can not cover, ceiling is opened wide), carry out material when growth and finish, use the movable quartz plate 7a of another piece edging instead to cover on breach, so also avoided the deposition of starting material on ceiling 1 in baking.
The 4th embodiment is also at the monolithic type metal-organic chemical vapor deposition equipment.When baking graphite base 4, be inserted between ceiling 1 and the graphite base 4, stop the volatile matter on the graphite base 4 on ceiling 1, to deposit with a quartz baffle 6.And baking finish carry out material growth before, quartz baffle 6 is extracted out from reaction chamber.
Above-mentioned quartz member can be made with quartz as: reaction chamber ceiling, the movable quartz plate of edging, quartz baffle, quartzy slide bar, quartzy slot etc., also can be made by pottery (as aluminum oxide, magnesium oxide, boron nitride, silicon carbide, norbide etc.), heating resisting metal (as molybdenum, tungsten, tantalum), stainless steel (water-cooled of adding interlayer is arranged).If the reaction chamber growth temperature also can directly be made with stainless steel less than under 600 degrees centigrade the situation.
Claims (13)
1, the inverse baking deposition structure in a kind of chemical vapor deposition equipment for metal organic matter contains reaction chamber, reaction chamber ceiling, graphite base; It is characterized in that: described reaction chamber ceiling, over against the part of graphite base, a breach is arranged, breach is provided with the edging portable plate greater than the area of graphite base in the breach, and the edging portable plate is one or more; Described edging portable plate is one or more, when being one, when growth material, cover the edging portable plate on the breach, during the baking graphite base, the edging portable plate is taken away, make breach and exterior, the settling on the graphite base is risen by thermal evaporation, by the breach volatilization, and do not cause the deposit of starting material on the reaction chamber ceiling; During for polylith, when growth material, cover an edging portable plate on the breach, during the baking graphite base, change another piece edging portable plate and cover on the breach or do not put the edging portable plate, make breach and exterior.
2, inverse baking deposition structure according to claim 1 is characterized in that: the metal-organic chemical vapor deposition equipment that is suitable for the air inlet of monolithic type side.
3, inverse baking deposition structure according to claim 1 contains reaction chamber, reaction chamber ceiling, graphite base; It is characterized in that: between graphite base and reaction chamber ceiling a baffle plate is arranged, during the baking graphite base, baffle plate separates graphite base and reaction chamber ceiling, avoids the deposit of starting material on the reaction chamber ceiling; Described baffle plate is one or more, is installed with in the mode that can remove.
4, inverse baking deposition structure according to claim 3 is characterized in that: described baffle plate down either side and two slide bars are dynamically connected, and can slide on slide bar; Two slide bars are located between graphite base and the reaction chamber ceiling both sides above graphite base.
5, inverse baking deposition structure according to claim 3 is characterized in that: described baffle plate both sides, and suitable with the slot of reaction chamber ceiling lower surface both sides.
6, inverse baking deposition structure according to claim 4, it is characterized in that: during described baking graphite base, one or more baffle plate slides between graphite base and the reaction chamber ceiling along slide bar, and graphite base and reaction chamber ceiling are separated, and avoids the deposit of starting material on the reaction chamber ceiling; When growth material, one or more baffle plate slides to outside the zone between graphite base and the ceiling along slide bar, does not influence the normal growth of material.
7, inverse baking deposition structure according to claim 5 is characterized in that:
During described baking graphite base, a baffle plate is inserted along slot, graphite base and reaction chamber ceiling are separated, avoid the deposit of starting material on the reaction chamber ceiling; When growth material, baffle plate is taken out along slot, do not influence the normal growth of material.
8, inverse baking deposition structure according to claim 4 is characterized in that: the distance between described two slide bars is greater than the size of graphite base and ceiling, and when growth material, slide bar does not influence the interior gas of reaction chamber and the distribution of temperature.
9, according to claim 3,4 or 5 described inverse baking deposition structures, it is characterized in that: be suitable for the monolithic type metal-organic chemical vapor deposition equipment that gas is gone in multi-disc type or side.
10, inverse baking deposition structure according to claim 1 is characterized in that: described reaction chamber ceiling and edging portable plate, and for quartzy, pottery, heating resisting metal or there is the stainless steel that adds the water-cooled interlayer to make.
11, inverse baking deposition structure according to claim 3 is characterized in that: described baffle plate is for quartzy, pottery, heating resisting metal or have the stainless steel that adds the water-cooled interlayer to make.
12, inverse baking deposition structure according to claim 4 is characterized in that: described slide bar is for quartzy, pottery, heating resisting metal or have the stainless steel that adds the water-cooled interlayer to make.
13, inverse baking deposition structure according to claim 5 is characterized in that: described slot is for quartzy, pottery, heating resisting metal or have the stainless steel that adds the water-cooled interlayer to make.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101018865A CN100510167C (en) | 2004-12-30 | 2004-12-30 | Inverse baking deposition structure in chemical vapor deposition equipment for metal organic matter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101018865A CN100510167C (en) | 2004-12-30 | 2004-12-30 | Inverse baking deposition structure in chemical vapor deposition equipment for metal organic matter |
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| CN1796598A CN1796598A (en) | 2006-07-05 |
| CN100510167C true CN100510167C (en) | 2009-07-08 |
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| CN102766851B (en) * | 2011-05-04 | 2014-01-01 | 广东量晶光电科技有限公司 | Metal organic chemical vapor deposition reactor |
| CN103320865A (en) * | 2013-06-21 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Shower head and vapor deposition equipment |
| CN113403609B (en) * | 2021-06-16 | 2023-08-15 | 苏州矩阵光电有限公司 | MOCVD cavity structure control method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5186756A (en) * | 1990-01-29 | 1993-02-16 | At&T Bell Laboratories | MOCVD method and apparatus |
| JP3191066B2 (en) * | 1992-03-27 | 2001-07-23 | キヤノン株式会社 | Gold thin film and method of forming patterned gold thin film |
| CN1377991A (en) * | 2002-01-30 | 2002-11-06 | 吉林大学 | MOCVD equipment and process for growing ZnO film |
| CN1489641A (en) * | 2000-12-29 | 2004-04-14 | ��ķ�о�����˾ | Low Contamination plasma chamber components and method for making same |
| US20040132298A1 (en) * | 2000-12-12 | 2004-07-08 | Ngk Insulators, Ltd. | Apparatus for fabricating a III-V nitride film |
-
2004
- 2004-12-30 CN CNB2004101018865A patent/CN100510167C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5186756A (en) * | 1990-01-29 | 1993-02-16 | At&T Bell Laboratories | MOCVD method and apparatus |
| JP3191066B2 (en) * | 1992-03-27 | 2001-07-23 | キヤノン株式会社 | Gold thin film and method of forming patterned gold thin film |
| US20040132298A1 (en) * | 2000-12-12 | 2004-07-08 | Ngk Insulators, Ltd. | Apparatus for fabricating a III-V nitride film |
| CN1489641A (en) * | 2000-12-29 | 2004-04-14 | ��ķ�о�����˾ | Low Contamination plasma chamber components and method for making same |
| CN1377991A (en) * | 2002-01-30 | 2002-11-06 | 吉林大学 | MOCVD equipment and process for growing ZnO film |
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Granted publication date: 20090708 Termination date: 20121230 |