CN100505954C - Substrate heater for laser molecular beam epitaxial device - Google Patents
Substrate heater for laser molecular beam epitaxial device Download PDFInfo
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- CN100505954C CN100505954C CNB2005100865854A CN200510086585A CN100505954C CN 100505954 C CN100505954 C CN 100505954C CN B2005100865854 A CNB2005100865854 A CN B2005100865854A CN 200510086585 A CN200510086585 A CN 200510086585A CN 100505954 C CN100505954 C CN 100505954C
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Abstract
The invention relates to a substrate heater for laser molecular beam epitaxial equipment, comprising furnance disc, where the bottom of the furnance disc is made with at least two fixed holes, bolts are inserted in the fixed holes, one segment of the bolt exposed out of the base is jacketed with pad or nut, on which heat insulation plate and pad/nut is arranged; the two ends of furnace wire plate are made with through hole and the surface of the furance wire plate is made with sprial groove, and furnace wire is coiled in the spiral groove; pressure plate is arranged on the ready-coiled furnace wire, the two ends of the pressure plate are also made with through holes opposite to those on the furnace wire plate, and the pressure plate, furnace wire plate and heat insulation plate are fixed on the furnace disc; the symmetrical positions of the furnace disc and heat insulation plate are both drilled with two round holes as funrance wire lead holes, and the furnace wire leads are connected with the furnace wire and a heater power supply; the power supply is a low-ripple DC voltage stabilized power supply, the furnace wire and the invention eliminates the influence of magnetic field generated by furnace wire current on RHEED.
Description
Technical field
The present invention relates to the substrate heater in a kind of epitaxial device, particularly a kind of substrate heater that is used for laser molecular beam epitaxial device.
Background technology
Laser molecular beam epitaxy is a kind of novel high-accuracy membrane equipment that occurs nineteen nineties, for example list of references 1: " Chinese science ", A, Vol.28,260 (1998), prepare high-quality epitaxial thin film material, general epitaxial substrate must have certain temperature, especially some nucleation temperatures require than higher material, and its underlayer temperature need be heated to 800 ℃-1000 ℃.For controlling the epitaxially grown laser molecular beam epitaxy of stratiform by atomic scale, be generally operational under high vacuum even the UHV condition, this moment, the heat conduction of gaseous exchange did not almost have, substrate temperature is mainly leaned on the thermal radiation of calandria and is obtained, therefore after underlayer temperature reaches several Baidu, the efficient of its heating is less than 40%, in other words, substrate temperature does not reach 40% of calandria temperature, under high vacuum and UHV condition, obtain the still difficulty relatively of underlayer temperature more than 900 ℃.Therefore have the people to adopt LASER HEATING, not only the complicated cost of equipment is very high for LASER HEATING, and the difficult larger area that obtains evenly heats.The heating of human electron beam or radio-frequency technique is also arranged, and except its cost height, electron beam or radio frequency can disturb laser molecular beam epitaxy to be used for the original position instruments such as RHEED of monitoring in real time.Several the patents that are used for the dissimilar heaters of membrane equipment that the applicant holds, for example: China Patent No.: ZL93203399.7; ZL94246584.9; ZL95224595.7; ZL00256624.9; But, therefore be not suitable for laser molecular beam epitaxial device because there is the monitoring instrument of electromagnetic interference laser molecular beam epitaxy in the frame mode of these patent heaters yet.
Summary of the invention
The objective of the invention is to: overcome above-mentioned existing substrate heater when being used for laser molecular beam epitaxy, exist heating-up temperature not high enough, or disturb the instruments such as RHEED that are used for the real-time monitoring of original position, directly influence the deficiency of laser molecular beam epitaxy growth; Thereby provide a kind of mode that adopts high adiabatic furnace binding and degaussing field stove filament winding system, simple in structure, the substrate heater that is used for laser molecular beam epitaxial device that cost is low.
The object of the present invention is achieved like this:
The substrate heater that is used for laser molecular beam epitaxial device provided by the invention comprises: the power supply of stone or metal plate for standing a stove on as a precaution against fire 1, stove silk 5, stove silk lead-in wire 6 and heater; Also comprise a sheet stove filament plate 2, thermal insulation board 3, compressing tablet 4, described stove filament plate 2, thermal insulation board 3, compressing tablet 4 two ends all have through hole, and its through hole institute open position is corresponding; Described stone or metal plate for standing a stove on as a precaution against fire 1 is the container of opening, have at least 2 fixing holes on its base, penetrate screw 7 in the fixing hole, this screw 7 is with pad or nut 8 on one section that spills on the base, on pad or nut 8, put thermal insulation board 3, and then on screw 7, overlap pad or nut; Have the helicla flute around stove silk 5 usefulness on the plate face of described sheet stove filament plate 2, stove silk 5 is wrapped on the stove filament plate 2 by helicla flute; A compressing tablet 4 presses on wind the stove filament plate 2 of stove silk 5, with screw 7 two ends of compressing tablet 4 with stove silk 5 is enclosed within on the screw, by nut compressing tablet 4, stove filament plate 2, thermal insulation board 3 is fixed on the stone or metal plate for standing a stove on as a precaution against fire 1; Each makes a call to 2 circular holes on the symmetric position of stone or metal plate for standing a stove on as a precaution against fire 1 and thermal insulation board 3, and as the hole of the stove silk of stove silk 5 lead-in wire 6, stove silk lead-in wire 6 is connected with stove silk 5 two ends, and the stove silk goes between and 6 is electrically connected with the power supply of heater.
In above-mentioned technical scheme, described stone or metal plate for standing a stove on as a precaution against fire 1 is the container of circular, square opening.
In above-mentioned technical scheme, described stone or metal plate for standing a stove on as a precaution against fire 1, stove filament plate 2, thermal insulation board 3 all adopt pyrophyllite material to make, and this pyrophillite is annealed more than 5 hours under 1000 ℃-2000 ℃ temperature conditions, make its venting and potteryization.
In above-mentioned technical scheme, the power supply of described heater is the D.C. regulated power supply of low ripple.
In above-mentioned technical scheme, described stove filament plate is processed into circle or the rectangular tab that thickness is 2～4mm, and at the helicla flute of the two sides of stove filament plate processing, its spiral groove depth is 0.5～1mm, and it is spaced apart 2～4mm.
In above-mentioned technical scheme, described stove silk 5 is tantalum wire or molybdenum filament, and the diameter of its stove silk 5 is 0.5～1.5mm.
In above-mentioned technical scheme, described compressing tablet 4 is made for boron nitride material, and its thickness is 0.2～0.5, width is 5～10mm.
The invention has the advantages that: the substrate heater that is used for laser molecular beam epitaxial device of the present invention, adopt the mode of high adiabatic furnace binding and degaussing field stove filament winding system, select for use pyrophyllite material to do stone or metal plate for standing a stove on as a precaution against fire, thermal insulation board and stove filament plate, not only because pyrophillite is a kind of high temperature resistant and have a material of bad thermal conduction characteristic, and pyrophillite can be through car, machine work such as wash and be shaped, obtain needed shape and structure.Stone or metal plate for standing a stove on as a precaution against fire, thermal insulation board and stove filament plate with pyrophyllite material processing through the high annealing more than 1000 ℃, become the hard pottery with certain intensity.Therefore, the employing pyrophyllite material makees stone or metal plate for standing a stove on as a precaution against fire and thermal insulation board has good thermal insulation, reduces thermal losses, makes the heat of stove silk effectively concentrate radiation direction substrate bracket and epitaxial substrate, is beneficial to heated substrate.
Substrate heater of the present invention, select for use tantalum or molybdenum filament to do heater strip, adopting again to be spirally coiled on the lamelliform stove filament plate, except can the epitaxial substrate of heated plate shape, mainly be will to reduce as far as possible even can eliminate the influence of stove silk magnetic field that electric current produces to monitoring instrument RHEED.The stove silk is spirally coiled on the stove filament plate, because the stove filament plate is very thin, the stove silk of coiled coil can be approximately a flat helix tube, add heater and select the D.C. regulated power supply of low ripple for use, thereby not only very weak but also very stable in the magnetic field that heater surfaces produced, solve the problem of heater current to RHEED monitoring influence.
Because substrate heater of the present invention, take a boron nitride compressing tablet to be pressed on the stove silk, and prevented, the inhomogeneous even short circuit that collide and cause with substrate of the heating that causes because the stove silk adds thermal deformation.
Substrate heater of the present invention is used for the substrate heating of laser molecular beam epitaxial device, not only can be heated to underlayer temperature more than 1000 ℃, and can reach more than 1 year its useful life, receives extraordinary effect.
Description of drawings
Fig. 1 is a substrate heater structural representation of the present invention
Drawing is described as follows:
1-stone or metal plate for standing a stove on as a precaution against fire; 2-stove filament plate; 3-thermal insulation board;
4-compressing tablet; 5-stove silk; 6-stove silk lead-in wire;
7-screw; 8-nut.
Embodiment
Below in conjunction with drawings and Examples structure of the present invention is described in detail:
Embodiment 1,
With reference to figure 1, making one is used for the substrate heater of laser molecular beam epitaxial device, with turner pyrophillite is processed into an external diameter φ 80mm, internal diameter φ 76mm, high 20mm, the thick 2mm of arm, the cup-shaped receptacle of opening is made stone or metal plate for standing a stove on as a precaution against fire 1, on the round bottom seat of stone or metal plate for standing a stove on as a precaution against fire 1, each makes a call to the round tube hole of 4 φ 4.5mm on its symmetric position.With turner pyrophillite is processed into a φ 74mm, the disk of thick 1.5mm is done thermal insulation board 3.With turner pyrophillite is processed into a φ 74mm, the disk of thick 2.5mm, and two the surface process dark 1mm with washing the worker, the interval 2mm helicla flute do stove filament plate 2; And on thermal insulation board 3 and stove filament plate 2, open the round tube hole of 4 φ 4.5mm, the position of through hole is corresponding with the round tube hole on the stone or metal plate for standing a stove on as a precaution against fire 1 round bottom seat, as the fixing hole with M4 screw 7.Each makes a call to the circular hole of 2 φ 2mm on the symmetric position of stone or metal plate for standing a stove on as a precaution against fire 1 and thermal insulation board 3, as the hole of the stove silk of stove silk 5 lead-in wire 6.The stone or metal plate for standing a stove on as a precaution against fire 1 that processes, thermal insulation board 3 and stove filament plate 2 are put into high temperature furnace, slowly be heated to 1300 ℃ after, sintering 10 hours.Then the tantalum wire as stove silk 5 is spirally coiled in the cutting of stove filament plate (2), the diameter of tantalum wire is φ 1mm; The long stove silk lead-in wire 6 of a bit doing is stayed at the two ends of stove silk 5.Select the thick 0.5mm of a slice for use, the boron nitride sheet of wide 10mm is made compressing tablet 4.M4 stainless steel screw with long 30mm is made screw 7, do nut 8 with M4 stainless steel nut, be connected and fixed by accompanying drawing, also there is through hole at compressing tablet 4 two ends, the position of through hole is corresponding on the position of its through hole and the stove filament plate 2, with screw 7 two ends of compressing tablet 4 with stove silk 5 are enclosed within on the screw, compressing tablet 4, stove filament plate 2, thermal insulation board 3 are fixed on the stone or metal plate for standing a stove on as a precaution against fire 1 by nut; Each makes a call to 2 circular holes on the symmetric position of stone or metal plate for standing a stove on as a precaution against fire 1 and thermal insulation board 3, and as the hole of the stove silk of stove silk 5 lead-in wire 6, stove silk lead-in wire 6 is connected with stove silk 5 two ends, and the stove silk goes between and 6 is electrically connected with the D.C. regulated power supply of commercially available low ripple.
Embodiment 2
With reference to figure 1, be used for the substrate heater of laser molecular beam epitaxial device by the structure fabrication one of embodiment 1, wherein difference is: the external diameter of stone or metal plate for standing a stove on as a precaution against fire 1 is 50mm, internal diameter is 46mm; The diameter of thermal insulation board 3 and stove filament plate 2 is the disk of φ 44mm, and the stone or metal plate for standing a stove on as a precaution against fire 1 that processes, thermal insulation board 3 and stove filament plate 2 are put into high temperature furnace, slowly be heated to 1800 ℃ after, sintering 8 hours.Molybdenum filament as stove silk 5 is spirally coiled in the helicla flute of stove filament plate 2, and its spiral groove depth is 0.5～1mm, and helicla flute is 2mm at interval.The diameter of molybdenum filament is φ 0.5mm.
Embodiment 3
With reference to figure 1, the substrate heater that is used for laser molecular beam epitaxial device by the structure fabrication one of embodiment 1, wherein difference is: with turner pyrophillite is processed into a φ 74mm, the disk of thick 4mm, and two the surface process dark 1.5mm with washing the worker, the interval 3mm helicla flute do stove filament plate 2.The stone or metal plate for standing a stove on as a precaution against fire 1 that processes, thermal insulation board 3 and stove filament plate 2 are put into high temperature furnace, slowly be heated to 2000 ℃ after, sintering 5 hours.Do stove silk 5 with the tantalum wire of φ 1.5mm.
Embodiment 4
With reference to figure 1, the substrate heater that is used for laser molecular beam epitaxial device by the structure fabrication one of embodiment 1, wherein difference is: with turner pyrophillite is processed into a 50mm * 50mm, the square plate of thick 3mm, and two the surface process dark 0.5mm with washing the worker, the interval 2.5mm helicla flute do stove filament plate 2, the stone or metal plate for standing a stove on as a precaution against fire 1 that processes, thermal insulation board 3 and stove filament plate 2 are put into high temperature furnace, after slowly being heated to 1000 ℃, sintering 12 hours.
Claims (7)
1, a kind of substrate heater that is used for laser molecular beam epitaxial device comprises: the power supply of stone or metal plate for standing a stove on as a precaution against fire (1), stove silk (5), stove silk lead-in wire (6) and heater; It is characterized in that: also comprise a sheet stove filament plate (2), thermal insulation board (3) and compressing tablet (4); The two ends of described stove filament plate (2), thermal insulation board (3) and compressing tablet (4) have through hole, and stove filament plate (2), thermal insulation board (3) are corresponding with the lead to the hole site that leave at compressing tablet (4) two ends; Described stone or metal plate for standing a stove on as a precaution against fire (1) is the container of opening, on its base, have at least 2 fixing holes, one screw (7) passes fixing hole from the bottom surface of base, this screw (7) spills on a section of base and is with pad or nut (8), on pad or nut (8), put thermal insulation board (3), and then go up cover Upper gasket or nut (8) at screw (7); Described stove silk (5) is a flat helix tube; Have the helicla flute around stove silk (5) usefulness on two surfaces of described sheet stove filament plate (2), described stove silk (5) is wrapped on the stove filament plate (2) by helicla flute; A compressing tablet (4) presses on wind the stove filament plate (2) of stove silk (5), with screw (7) two ends of compressing tablet (4) with stove silk (5) is enclosed within on the screw, is fixed on the stone or metal plate for standing a stove on as a precaution against fire (1) by nut; Each makes a call to 2 circular holes on the symmetric position of stone or metal plate for standing a stove on as a precaution against fire (1) and thermal insulation board (3), and as the hole of the stove silk of stove silk (5) lead-in wire (6), stove silk lead-in wire (6) is connected with stove silk (5) two ends, the stove silk go between (6) be electrically connected with the power supply of heater;
Described spiral groove depth is 0.5～1mm, and it is spaced apart 2～4mm.
2. by the described substrate heater that is used for laser molecular beam epitaxial device of claim 1, it is characterized in that: described stone or metal plate for standing a stove on as a precaution against fire (1) is the container of circular or square opening.
3. by the described substrate heater that is used for laser molecular beam epitaxial device of claim 1, it is characterized in that: described stone or metal plate for standing a stove on as a precaution against fire (1), stove filament plate (2), thermal insulation board (3) all adopt pyrophyllite material to make, this pyrophillite was annealed 5 hours under 1000 ℃-2000 ℃ temperature conditions at least.
4. by the described substrate heater that is used for laser molecular beam epitaxial device of claim 1, it is characterized in that: the power supply of described heater is the D.C. regulated power supply of low ripple.
5. by the described substrate heater that is used for laser molecular beam epitaxial device of claim 1, it is characterized in that: described stove filament plate (2) is processed into circle or the rectangular tab that thickness is 2～4mm.
6. by the described substrate heater that is used for laser molecular beam epitaxial device of claim 1, it is characterized in that: described stove silk (5) is tantalum wire or molybdenum filament, and the diameter of its stove silk (5) is 0.5～1.5mm.
7. by the described substrate heater that is used for laser molecular beam epitaxial device of claim 1, it is characterized in that: described compressing tablet (4) is made for boron nitride material, and its thickness is 0.2～0.5, width is 5～10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100865854A CN100505954C (en) | 2005-10-11 | 2005-10-11 | Substrate heater for laser molecular beam epitaxial device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100865854A CN100505954C (en) | 2005-10-11 | 2005-10-11 | Substrate heater for laser molecular beam epitaxial device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1949941A CN1949941A (en) | 2007-04-18 |
| CN100505954C true CN100505954C (en) | 2009-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100865854A Expired - Fee Related CN100505954C (en) | 2005-10-11 | 2005-10-11 | Substrate heater for laser molecular beam epitaxial device |
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| CN (1) | CN100505954C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN110922039A (en) * | 2019-12-06 | 2020-03-27 | 彩虹集团有限公司 | Annealing furnace heating device for producing liquid crystal glass |
Citations (5)
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| CN2341187Y (en) * | 1998-05-26 | 1999-09-29 | 程永龙 | Electric heating constant temperature controller |
| CN2425427Y (en) * | 2000-04-29 | 2001-03-28 | 中国科学院沈阳科学仪器研制中心 | Molecular beam source furnace |
| JP3164496B2 (en) * | 1995-10-09 | 2001-05-08 | 株式会社島精機製作所 | Cutting machine |
| CN2456435Y (en) * | 2000-11-28 | 2001-10-24 | 中国科学院物理研究所 | Heating device for preparing large-area film |
| CN1517454A (en) * | 2003-01-13 | 2004-08-04 | 中国科学院长春光学精密机械与物理研 | Method of preparing oxide film by molecular beam epitaxy |
-
2005
- 2005-10-11 CN CNB2005100865854A patent/CN100505954C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3164496B2 (en) * | 1995-10-09 | 2001-05-08 | 株式会社島精機製作所 | Cutting machine |
| CN2341187Y (en) * | 1998-05-26 | 1999-09-29 | 程永龙 | Electric heating constant temperature controller |
| CN2425427Y (en) * | 2000-04-29 | 2001-03-28 | 中国科学院沈阳科学仪器研制中心 | Molecular beam source furnace |
| CN2456435Y (en) * | 2000-11-28 | 2001-10-24 | 中国科学院物理研究所 | Heating device for preparing large-area film |
| CN1517454A (en) * | 2003-01-13 | 2004-08-04 | 中国科学院长春光学精密机械与物理研 | Method of preparing oxide film by molecular beam epitaxy |
Non-Patent Citations (1)
| Title |
|---|
| 激光分子束外延工艺用ZnO陶瓷靶材的研究. 贺永宁，朱长纯，候洵，杨晓东.硅酸盐学报，第33卷第3期. 2005 * |
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| CN1949941A (en) | 2007-04-18 |
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