CN100505824C - Integrated image acquisition chip and its device - Google Patents

Integrated image acquisition chip and its device Download PDF

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Publication number
CN100505824C
CN100505824C CN200410070389.3A CN200410070389A CN100505824C CN 100505824 C CN100505824 C CN 100505824C CN 200410070389 A CN200410070389 A CN 200410070389A CN 100505824 C CN100505824 C CN 100505824C
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Prior art keywords
light
flash
luminosity
substrate
control
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Expired - Fee Related
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CN200410070389.3A
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Chinese (zh)
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CN1735132A (en
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谢志成
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Pixart Imaging Inc
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Pixart Imaging Inc
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Abstract

The integrated image acquisition chip integrates the manufacture process for control circuit and CMOS sensor. Wherein, the control circuit comprises a luminosity sense module to control a frame detection flash light and receive and detect the luminosity size of optical signal, a calculation unit to calculate the luminosity, time and exposal parameter for a flash light, a flash control module to control the flash according to the result from calculation unit, and a exposure control module to control exposure mechanism by the calculated result.

Description

Integrated image acquisition chip and device thereof
Technical field
The invention provides a kind of image acquisition chip, refer to a kind of integrated image acquisition chip especially.
Background technology
All the time, camera is in the sparetime and uses and occupation is used for a kind of very general instrument of recording events in using, and especially along with progress and the information industry fast development in epoch, digital camera has been one of commodity of very hot topic now.In the process of photography, sometimes can run into the very dim situation of light arround the main body, just must rely on and subsidize the luminosity that light improves main body this moment, and photoflash lamp promptly is one and stablizes and subsidy light source the most just.Photoflash lamp is the matter, the amount and the direction of light of light of light on top of, allows the photograph that comes of breaking forth have more aesthetic feeling, photoflash lamp be controlled to be an important knowledge.In addition, the shutter of camera is also closely bound up with the quality of taking pictures, and different environment, different photograph effects must be chosen different aperture times, and the control of shutter and photoflash lamp, one of theme of the developer of camera control chip research especially.
Please refer to Fig. 1, Fig. 1 is the schematic diagram of a digital camera 10.This digital camera 10 comprises a shutter 14, lens 16, one optical pickocffs 18, a photoflash lamp 12, an internal memory 24 and a control chip 18.Optical pickocff 18 is CCD image sensor or cmos sensor.The time for exposure of the opening time decision camera of shutter 14.When shutter opening, lens 16 dwindle the extraneous image that will detect and image on the optical pickocff 18, and the image that obtains is noted and is stored within the internal memory 24 by optical pickocff 18.If extraneous luminosity is strong inadequately when the user takes a picture, photoflash lamp 12 meetings cooperate the opening time of shutter 14 to be glistened by the environment of photograph emission one from trend, and photoflash lamp 12 is promptly coordinated by control chip 12 with the time grasp of shutter 14 and handled.
The optical pickocff that the camera of being everlasting at present uses is the CCD image sensor.But the CMOS processing procedure of its manufacturing method thereof and existing circuit chip is also inequality, therefore, in the process of producing digital camera is that CCD image sensor and control chip that system manufacturer must be produced image sensor manufacturer respectively fit together, and just can finish a digital camera.Another cmos sensor also can be used for being used as the image sensing of digital camera.And the characteristics of cmos sensor processing procedure are that its manufacturing technology is identical with general cmos circuit processing procedure, therefore cmos sensor can be produced on peripheral circuit.Yet present cmos sensor manufacturer there is no the technology of circuit production, even use cmos sensor to be the image sensor in the camera, the production of camera is still with two different assemblies of image sensor and control chip, via assembling together of winding displacement.
Before image sensor and control chip were linked together by winding displacement, though can finish the assembling of digital camera, following shortcoming arranged: and one, the required program of the assembling of multiple assembly is many and complicated.Two, shutter, photoflash lamp and optical pickocff are controlled by an external chip, and signal transmits the running time that increased in different modules, also make shutter or photoflash lamp not to expose fast continuously.Three, control circuit and optical pickocff can't be finished by a processing procedure simultaneously, increase built-up time and production complexity.
Summary of the invention
The object of the present invention is to provide a kind of integrated image acquisition chip, be applicable to the image capture unit of a tool flash function, it comprises: a substrate; One cmos sensor, it is formed in this substrate, is used for receiving an image signal; And one control circuit be formed in this substrate, it comprises: luminosity detecting module is used for receiving light signal that reaches this image capture unit and the luminosity size of measuring this light signal; One computing unit, it links to each other with this luminosity detecting module, is used for the luminosity size of this light signal of measuring according to this luminosity detecting module, calculates a Control Parameter of glistening; And one the flash of light control die set, be used for controlling this flash of light according to the Control Parameter that this computing unit calculates.
The present invention proposes a kind of integrated image acquisition device in addition, and it comprises: a substrate; One exposure mechanism; One cmos sensor, it is formed in this substrate, is used for receiving an image signal; And a control circuit, being formed in this substrate, it comprises: luminosity detecting module is used for detecting the light signal that reaches this image capture unit; One computing unit, it links to each other with this luminosity detecting module, is used for detecting the result that module is detected according to this luminosity, calculates an exposure control parameter; One exposure control die set, it links to each other with this computing unit, is used for controlling this exposure mechanism according to this exposure control parameter.
Description of drawings
Fig. 1 is the schematic diagram of an existing digital camera.
Fig. 2 is the schematic diagram of the integrated image acquisition chip of first embodiment of the invention.
Fig. 3 is the integrated image acquisition schematic representation of apparatus of second embodiment of the invention.
Fig. 4 is the integrated image acquisition schematic representation of apparatus of third embodiment of the invention.
Fig. 5 is the integrated image acquisition schematic representation of apparatus of fourth embodiment of the invention.
Fig. 6 is the integrated image acquisition schematic representation of apparatus of fifth embodiment of the invention.
Fig. 7 is the flow chart of a kind of photoflash lamp, shutter and aperture control method that realizes with integrated image acquisition chip of the present invention.
The figure number explanation
10 digital cameras, 14 shutters
16 lens, 18 optical pickocffs
12 photoflash lamps, 24 internal memories
18 control chips, 30,50,70 integrated image acquisition devices
31 substrates, 34 luminosity detecting module
36 cmos sensors, 38 computing units
42 flash of light control die set, 44 internal memories
46 interface circuits, 48 photoflash lamps
32 detecting flashing lights, 52 diaphragm shutter control die set
55 apertures, 54 shutters
Embodiment
Please refer to Fig. 2, Fig. 2 is the schematic diagram of the image acquisition chip 30 of first embodiment of the invention.Image acquisition chip 30 comprises a substrate 31, luminosity detecting module 34, a cmos sensor 36, a computing unit 38, a flash of light control die set 42, an internal memory 44, an interface circuit 46.Image acquisition chip 30 of the present invention utilizes the homogeny of cmos sensor and cmos circuit processing procedure, and the luminosity detecting module 34, computing unit 38 and the flash of light control die set 42 that cmos sensor 36 and circuit are belonged to circuit part are grown up in substrate 31 simultaneously in manufacturing process.Luminosity detecting module 34 receives the light signal in the viewfinder window in advance before taking pictures, judge with this light signal whether the light of external environment is enough, whether needs to activate photoflash lamp.And 34 detectings of luminosity detecting module receive the luminosity size of signal, are transferred to computing unit 38 measuring the luminosity data that comes out.Computing unit calculates a photoflash lamp 48 necessary time, the luminosity of photoflash lamp 48 and frequencies of photoflash lamp 48 of opening or the like according to the photometering result of luminosity detecting module 34, and the result transmission of having calculated is to the control die set 42 of glistening.Flash of light control die set 42 links to each other with photoflash lamp 48, is controlling photoflash lamp 48 and activate flash of light when taking pictures.Image acquisition chip of the present invention can be as the built-in chip of digital camera use.
Cmos sensor 36 is used for receiving an image signal as the egative film of camera, and this image signal that is received can reach in the internal memory 44 and store, to preserve captured image.Interface circuit 46 is used for exporting the data of depositing in the internal memory, is transferred to the coffret of miscellaneous equipment as data.Internal memory 44 among Fig. 2 and interface circuit 46 neither being included in the substrate 31, yet, this only is one of them embodiment, in different embodiments of the invention, internal memory 44 and interface circuit 46 can be formed at internal memory 44 and interface circuit 46 in the substrate 31 simultaneously according to designer's needs, or one of them is formed in the substrate 31 with internal memory 44 and interface circuit 46.
(intensity, time, frequency ...) must be according to comprising many reference factors such as configuration and setting or external environment when calculating some operating parameters of photoflash lamp when computing unit.Will judge at first whether the external environment light is enough, if light is inadequate or configuration and setting is to force under the situation of flashing light, 42 preparations of flash of light control die set activate photoflash lamps.If photographer wants to adopt the short shooting skill of aperture time and is in the very dark environment, then Shan Guang time will be very short and also luminosity must concentrate a bit.On the other hand, if environment has a brightness but is not very strong situation in dusk, user's decision is done exposure with longer aperture time and is taken a picture, and this moment, needed Flash Mode was then for flash of light is long, the more weak flash of light of luminosity.The luminosity of these different external environments is all by after 34 detectings of luminosity detecting module, transfer to computing unit 38 and do calculating, with the Flash Mode that obtains being fit to, but configuration and setting and system default value that computing unit 38 still can the person of being used in calculation process decide result of calculation.Must be noted that under the situation of the many continuous shootings of camera photoflash lamp 48 also belongs to the control range of the control die set 42 of glistening with a certain frequency group flashing light.
Please refer to Fig. 3, Fig. 3 is the schematic diagram of the image capture unit 50 of second embodiment of the invention.Image capture unit 50 comprises a substrate 31, a detecting flashing light 32, luminosity detecting module 34, a cmos sensor 36, a computing unit 38, a diaphragm shutter control die set 52, an internal memory 44, an interface circuit 46, an aperture 55 and a shutter 54.Image capture unit 50 of the present invention utilizes the homogeny of cmos sensor and cmos circuit processing procedure equally, and the luminosity detecting module 34, computing unit 38 and the diaphragm shutter control die set 52 that cmos sensor 36 and circuit are belonged to circuit part are grown up in substrate 31 simultaneously in manufacturing process.
In the process of taking pictures, luminosity detecting module 34 and computing unit in the camera can be judged the required time for exposure of taking pictures according to the light that enters in the camera.Why light can enter camera, is because irradiate light at body surface, reflexes in the camera via body surface.Be to make standard according to the reflectivity 18% (middle grey) near the average reflection effect of the color of the Nature when judging reverberation, what of exposure computing unit 38 change according to the reverberation different condition again.
The aperture 55 of how much following camera of exposure has very confidential relation with shutter 54.What of camera the time control light of the size of aperture 55 and shutter 54 switches enter, and the size of aperture 55 has inseparable relation again with the time of shutter 54 in addition, and therefore, aperture 55 is worked in coordination with the action of shutter 54.When control circuit 30 began to activate, detecting flashing light 32 sent detected light one, is used for judging the reflectivity of external environment, and the reverberation behind the object is got in 34 receptions of luminosity detecting module, and this reverberation is done photometering.Computing unit 38 calculates the openings of sizes of aperture 55 and the switching time of shutter 54 according to the photometering result, and data is passed to diaphragm shutter control die set 52 control aperture 55 and shutter 54 thus.
On the other hand, aperture and shutter also have clearly influence to the effect of photography except control light, and wherein most important effect is exactly the depth of field.When aperture was big usually, the depth of field was just short, and when aperture was little, the depth of field was just long.The degree of knowing of length decision breaks forth the photograph theme and the context of the depth of field.Computing unit 38 can or default in inner configuration according to the requirement of using, and calculates suitable parameter to offer diaphragm shutter control die set 52 as the Optimal Control foundation.Importantly, the present invention combines control circuit and cmos sensor in manufacturing process, the transmittance process of internal signal is efficient very fast, when particularly handling continuous shooting photography at a high speed, shutter 54 needs controlling signal fast because of fast motion, the present invention has shortened the signal controlling reaction time of prior art, improves continuous shooting speed.
Internal memory 44 among Fig. 3 and interface circuit 46 neither being included in the substrate 31, yet, this only is one of them embodiment, in different embodiments of the invention, internal memory 44 and interface circuit 46 can be formed at internal memory 44 and interface circuit 46 in the substrate 31 simultaneously according to designer's needs, or one of them is formed in the substrate 31 with internal memory 44 and interface circuit 46.In addition, in this embodiment, the aperture of image capture unit and shutter are a kind of exposure device, with the time for exposure of shutter opening time decision cmos sensor, receive the size of light quantity with the unlatching size decision cmos sensor of aperture.Can control the exposure that an exposure mechanism carries out cmos sensor by an exposure control die set that links to each other with computing unit 38 in the image capture unit, computing unit 38 is used in addition according to the result of luminosity detecting module 34 detectings, calculate an exposure control parameter, the exposure control die set also cooperates the built-in electronic shutter control of cmos sensor to control this exposure mechanism according to this exposure control parameter.
Please refer to Fig. 4.Fig. 4 is the schematic diagram of the image capture unit 70 of third embodiment of the invention.Image capture unit 70 comprises a substrate 31, a detecting flashing light 32, luminosity detecting module 34, a cmos sensor 36, a computing unit 38, a diaphragm shutter control die set 52, a flash of light control die set 42, an internal memory 44, an interface circuit 46, a photoflash lamp 48, an aperture 55 and a shutter 54.Image acquisition chip 70 of the present invention is grown up luminosity detecting module 34, computing unit 38, flash of light control die set 42 and diaphragm shutter control die set 52 that cmos sensor 36 and circuit belong to circuit part in substrate 31 simultaneously in manufacturing process.
In this embodiment, luminosity detecting module 34 also is used for measuring the reverberation luminosity that detecting flashing light 32 luminous backs are reflected by illuminated object except being used for measuring the light signal luminosity of the camera viewfinder window that is received.The action parameter that computing unit 38 calculates photoflash lamp 48, shutter 54 and aperture 55 according to the luminosity and the reverberation luminosity of the light signal of camera viewfinder window respectively.Because the Exposure mode of cmos sensor is formula (progressive) but not the while Exposure mode of ccd sensor in proper order, so the electronic shutter in the diaphragm shutter control die set 52 must precisely cooperate with the switching time of mechanical shutter 54, just can take or reach preferable effect.On the other hand, the size of aperture 55 and the time of shutter 54 have corresponding mutually, and photoflash lamp 48 also must be coordinated mutually with the operate time of shutter 54.In addition, the configuration and setting of needed shooting effect of user and internal system, be all the computing reference frame of computing unit 38, do computing arrangement at last and obtain the result and reach flash of light control die set 42 control photoflash lamps 48 respectively, reach diaphragm shutter control die set 52 control aperture 55 and shutters 54.
The present invention combines control circuit and cmos sensor in manufacturing process, the transmittance process of internal signal is efficient very fast, when particularly handling continuous shooting photography at a high speed, shutter 54 needs controlling signal fast with photoflash lamp 48 because of fast motion, the present invention has shortened the signal controlling reaction time of prior art, improves continuous shooting speed.
Please refer to Fig. 5, Fig. 5 is the schematic diagram of the image capture unit 80 of fourth embodiment of the invention.Image capture unit 70 comprises a substrate 31, a detecting flashing light 32, luminosity detecting module 34, a cmos sensor 36, a computing unit 38, a diaphragm shutter control die set 52, a flash of light control die set 42, an internal memory 44, an interface circuit 46, a photoflash lamp 48, an aperture 55 and a shutter 54.Image acquisition chip 80 of the present invention is grown up cmos sensor 36 and luminosity detecting module 34, computing unit 38, flash of light control die set 42, diaphragm shutter control die set 52 and internal memory 44 in substrate 31 simultaneously in manufacturing process.Image acquisition chip 80 its operation principles and the mode of Fig. 5 are identical with the image capture unit 70 of Fig. 4.
Please refer to Fig. 6, Fig. 6 is the schematic diagram of the image acquisition chip 90 of fifth embodiment of the invention.Cmos sensor 36 among this embodiment in the image capture unit 90 is grown up in substrate 31 in manufacturing process simultaneously with luminosity detecting module 34, computing unit 38, flash of light control die set 42, diaphragm shutter control die set 52, internal memory 44 and interface circuit 46.Its operation principles of the image acquisition chip of Fig. 6 is identical with the image acquisition chip device of manner of execution and Fig. 4.
Please refer to Fig. 7, Fig. 7 is the control method of a kind of photoflash lamp with the integrated image acquisition chip device of the present invention, shutter and aperture.Step 100 is grown up a cmos sensor and a control circuit in a substrate simultaneously in manufacturing process.This control circuit comprises luminosity detecting module 34, computing unit 38, flash of light control die set 42 and the diaphragm shutter control die set 52 among Fig. 5.Step 110 is sent a detecting flash of light, and this step is in order to survey by the light degree of reflection according to environment, with as the reference of adjusting aperture size, can to omit this step as not considering this function.Step 120 receives this detecting flash of light via light signal that illuminated object reflected and the light signal that receives the viewfinder window of this camera.Step 130 is measured in the reverberation signal luminosity of step 120 reception and the light signal luminosity of viewfinder window.Then step 130 can be respectively or is carried out step 140 and step 150 simultaneously.The reverberation signal luminosity that step 140 is measured according to step 130, this control circuit are adjusted suitably size and open shutter with a time for exposure of aperture to.Step 150 is according to the light signal of the viewfinder window of this camera, and this control circuit flashes with a flash time and a flash intensity.
The previous CCD image sensor that in digital camera, uses, the CMOS processing procedure of its manufacturing method thereof and existing circuit chip is also inequality, therefore, circuit chip and CCD image sensor can not together be incorporated on the substrate in the process of producing digital camera, and system manufacturer must just can be finished a digital camera by assembling of winding displacement with CCD image sensor and control chip together.Before image sensor and control chip were linked together by winding displacement, need many and complicated assembly program, cost is also higher relatively, and because the signal passing time that different inter-modules will be grown, make shutter instantaneous exposure continuously, so camera can't the high speed continuous shooting.Compared to previous modular digital camera, the present invention combines control circuit and cmos sensor in manufacturing process, the transmission of signal is finished by same suprabasil metal wire, efficient and the electric very fast complexity of the transmission of internal signal is low, can handle continuous shooting photography at a high speed.And lower hardware complexity promotes digital camera overall operation efficient, reduces and makes production cost, increases the performance of camera and the quality of photograph, is that prior art can't be reached.

Claims (10)

1, a kind of integrated image acquisition chip is applicable to it is characterized in that the image capture unit of a tool flash function, comprises:
One substrate;
One cmos sensor, it is formed in this substrate, is used for receiving an image signal; And
One control circuit is formed in this substrate, and it comprises:
One luminosity detecting module is used for receiving light signal that reaches this image capture unit and the luminosity size of detecting this light signal;
One computing unit, it links to each other with this luminosity detecting module, is used for the luminosity size of this light signal of detecting according to this luminosity detecting module, calculates a Control Parameter of glistening; And
One flash of light control die set is used for controlling this flash of light according to this Control Parameter that this computing unit calculates.
2, image acquisition chip as claimed in claim 1 is characterized in that, the Control Parameter of this flash of light that this computing unit calculates comprises following arbitrary or its compound mode: the flash of light of the luminosity of flash of light, flash time and a plurality of flashes of light at interval.
3, image acquisition chip as claimed in claim 1 is characterized in that, other comprises an internal memory, is formed in this substrate.
4, image acquisition chip as claimed in claim 1 is characterized in that, other comprises an interface circuit, is formed in this substrate, is used for exporting the image signal that this cmos sensor receives.
5, a kind of integrated image acquisition device is characterized in that, comprises:
One substrate;
One exposure mechanism, this exposure mechanism comprises an aperture and shutter;
One cmos sensor, it is formed in this substrate, is used for receiving an image signal; And
One control circuit is formed in this substrate, and it comprises:
One luminosity detecting module is used for detecting the light signal that reaches this image capture unit;
One computing unit, it links to each other with this luminosity detecting module, is used for detecting the result that module is detected according to this luminosity, calculates an exposure control parameter, and this exposure control parameter comprises the opening time of this aperture size value and this shutter;
One exposure control die set, it links to each other with this computing unit, is used for controlling this exposure mechanism according to this exposure control parameter.
6, image capture unit as claimed in claim 5 is characterized in that, other comprises an internal memory, is formed in this substrate.
7, image capture unit as claimed in claim 5 is characterized in that, other comprises an interface circuit, is formed in this substrate, is used for exporting the image signal that this cmos sensor receives.
8, image capture unit as claimed in claim 5 is characterized in that, this computing unit is used for detecting the result that module is detected according to this luminosity in addition, calculates the Control Parameter of a flash of light.
9, image capture unit as claimed in claim 8 is characterized in that, the Control Parameter of this flash of light that this computing unit calculates comprises following arbitrary or its compound mode: the flash of light of the luminosity of this flash of light, the flash time of this flash of light and a plurality of flashes of light at interval.
10, image capture unit as claimed in claim 9 is characterized in that, other comprises a flash of light control die set, and it links to each other with this computing unit, is used for the Control Parameter of this flash of light of calculating according to this computing unit to control a flash of light.
CN200410070389.3A 2004-08-02 2004-08-02 Integrated image acquisition chip and its device Expired - Fee Related CN100505824C (en)

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Application Number Priority Date Filing Date Title
CN200410070389.3A CN100505824C (en) 2004-08-02 2004-08-02 Integrated image acquisition chip and its device

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Application Number Priority Date Filing Date Title
CN200410070389.3A CN100505824C (en) 2004-08-02 2004-08-02 Integrated image acquisition chip and its device

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Publication Number Publication Date
CN1735132A CN1735132A (en) 2006-02-15
CN100505824C true CN100505824C (en) 2009-06-24

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