CN100504552C

CN100504552C - Transverse-field liquid-crystal display device

Info

Publication number: CN100504552C
Application number: CNB2005101133374A
Authority: CN
Inventors: 林俊雄; 施博盛; 杨界雄; 廖大舜
Original assignee: Hannstar Display Corp
Current assignee: Hannstar Display Corp
Priority date: 2005-09-29
Filing date: 2005-09-29
Publication date: 2009-06-24
Anticipated expiration: 2025-09-29
Also published as: CN1940682A

Abstract

A liquid crystal display with horizontal electric field consists of liquid crystal layer set between the first and the second base plates, a numbers of grid lines and data lines on the first base plate for forming a pixel region, pixel electrode on the first base plate in said pixel region, a face-opposite electrode on the second base plate in position corresponding to one of data lines, a pair of protection electrode on the first base plate as one data line set between this pair and a share electrode with two units being separately set near to pixel electrode and set in corresponding to one of data lines.

Description

LCD with transverse electric field

[technical field]

The invention relates to a kind of transverse electric field effect (In-Plane Switching, IPS) LCD (Liquid Crystal Display, LCD), particularly about a kind of third generation transverse electric field effect (Advanced Super In-PlaneSwitching, AS-IPS) LCD that does not have flatness layer (Overcoat Layer).

[background technology]

LCD since its weight than cathode-ray tube (CRT) (Cathode Ray Tube, CRT) display is light, and take up space is also few with the radiant rays of being emitted, and has different application of all kinds, be used in widely among the daily life at present, become the main flow of display.Develop so far, the image quality of LCD, even can match in excellence or beauty with the conventional cathode ray tube display.Yet LCD still exists many shortcomings to overcome, such as the problem of narrower visual angle and brightness disproportionation or the like.

At the narrower problem in visual angle, existing at present multinomial wide viewing angle technology is in order to overcome, and the technology of transverse electric field effect mode wherein more is considered to the most outstanding a kind of in the wide viewing angle technology.Yet the technology of transverse electric field effect mode is though represent that aspect wide viewing angle well its aperture opening ratio (Aperture Ratio) is lower, (Color Shift) is more serious for aberration, is undisputable fact also.Therefore, (Super In-Plane Switching, the S-IPS) technology of pattern, and AS-IPS technology is to solve the problem of above-mentioned aberration and low aperture opening ratio respectively successively to produce second generation transverse electric field effect.

See also Figure 1A and Figure 1B, 1C, be United States Patent (USP) the 6th, 839, the planimetric map of No. 115 disclosed S-IPS LCD and sectional view.Shown in Figure 1A and Figure 1B, gate line 111 and data line 112 respectively level, be located vertically on first substrate 11, to define a pixel region of S-IPS LCD.This pixel region comprises: several first shared electrode 113 and several pixel electrodes 114, and wherein first shared electrode 113 is outer peripheral areas A that part is overlapped in pixel region with pixel electrode 114, the part enlarged drawing of its section can be consulted Figure 1B.Second shared electrode 115 is to be positioned at first shared electrode, 113 tops, and overlaps with pixel electrode 114 parts, and is connected with first shared electrode 113 through a contact hole 116.12 of one second substrates are towards first substrate 11, and a black matrix 121 is to be disposed on second substrate 12, to avoid light leak.In this example, first shared electrode 113 and second shared electrode 115 each other near, and acting in conjunction is avoided the data voltage effects influence of proximity data line 112 with protection pixel electrode 114.Yet aforesaid S-IPS LCD still has the space of improvement, the capacitive coupling of 112 of its pixel electrode 114 and data lines especially, and the local cross-talk that is caused (Local Crosstalk) needs bigger black matrix to suppress.

On the other hand, the AS-IPS LCD then can reach high aperture opening ratio.See also Fig. 2, it is a United States Patent (USP) the 6th, 693, and the diagrammatic cross-section of No. 687 disclosed AS-IPS LCD comprises: one first substrate 21, one second substrate 22 have a black matrix 221, and this two substrates and accompanies a liquid crystal layer 23 therebetween toward each other.One both alignment layers 24 is attached at the inner surface of first substrate 21, and another both alignment layers 25 is attached at the inner surface of second substrate 22.

Data line 211 is positioned on first substrate 21, formed by a conductive layer, and corresponding to the black matrix 221 on second substrate 22, and as the signal input of show image.Shared electrode comprises a first 212 and a second portion 214, and wherein first 212 is made of transparency conducting layer, in order to protect and fully data line 211 to be covered, to eliminate the electric leakage field that data line 211 is produced fully, with the cross-talk due to it.In addition, the second portion 214 of pixel electrode 213,215 and shared electrode is to be disposed at same one deck, with the demonstration of control display picture.One by the made flatness layer 26 of transparent resin, is sandwiched between the both alignment layers 24 and first substrate 21, to reduce the capacity effect that data line 211 and first 212 overlap and caused.

Though by the flatness layer of AS-IPS LCD, can improve aperture opening ratio, and eliminate the cross-talk phenomenon, yet reduce yield also, and cause the increase of manufacturing cost.In order to overcome the shortcoming of aforementioned prior art, the invention provides a kind of brand-new AS-IPS LCD, it can improve the aperture opening ratio of liquid crystal panel, and improves yield and reduce manufacturing cost.

[summary of the invention]

The objective of the invention is to be to provide a kind of LCD with transverse electric field, it has the advantage of high aperture and low manufacturing cost.

In order to achieve the above object, the invention provides a kind of LCD with transverse electric field, comprise: first substrate, second substrate, liquid crystal layer, it is sandwiched between this first substrate and this second substrate, several gate lines and several data lines, it is disposed on this first substrate, and interlaced with each other to center on formation one pixel region, pixel electrode, it is disposed on this first substrate, and is positioned among this pixel region; This LCD with transverse electric field is characterized in that: comprise: a subtend electrode, be disposed on this second substrate, and to one of should data line; A pair of guard electrode is disposed on this first substrate, and wherein one of this data line is between this is to guard electrode; And one share electrode, has a first and a second portion, is disposed on this first substrate, wherein this first has one first slit, it is corresponding to one of this data line, and this second portion is to be positioned among this pixel region, and is adjacent to this pixel electrode.

Its preferably, this first have one second slit, and corresponding to one of this gate line.

Its preferably also comprises a call wire and is disposed on this first substrate, and is separated by with this gate line.

Its preferably, this guard electrode is in quick condition.

Its preferably, this shared electrode is applied with a fixed voltage or and shares voltage.

Its preferably, this counter electrode is applied with a fixed voltage or and shares voltage.

Its preferably, this first are a transparency electrode.

Its preferably, this second portion is to be a transparency electrode.

Its preferably, this pixel electrode is to be a transparency electrode.

Its preferably, this guard electrode is to be an opaque electrode.

Its preferably, this counter electrode is to be an opaque electrode or a transparency electrode.

Its preferably, one of them is to be zigzag for this counter electrode, this guard electrode, this data line, this first, this second portion and this pixel electrode.

Its preferably, one of this data line and this have a horizontal range between the guard electrode, and its scope circle is between 0.1～10.0 μ m.

Its preferably wherein between one of this data line and this first, also has a vertical range, and its scope circle is between 0.1～2.8 μ m.

The invention provides a kind of LCD with transverse electric field, a kind of AS-IPS LCD that does not have flatness layer particularly is provided, by aforesaid electrode spread, omitted AS-IPS liquid crystal flatness layer originally, to eliminate the material cost of flatness layer, can also reach the LCD of high aperture, low aberration.On the other hand, owing to do not have a cause of flatness layer, its yield can compare favourably with traditional LCD with transverse electric field, thereby reduces manufacturing cost.

In order to achieve the above object, relevant more detailed content and the feasible embodiment of the present invention, it is as follows to please refer to description of drawings.

[description of drawings]

Figure 1A is the floor map of the S-IPS LCD of prior art;

Figure 1B is the diagrammatic cross-section of the S-IPS LCD of prior art;

Fig. 1 C is the partial enlarged drawing of Figure 1B;

Fig. 2 is the diagrammatic cross-section of the AS-IPS LCD of prior art;

Fig. 3 is a LCD of the present invention, the diagrammatic cross-section of its basic framework;

Fig. 4 A is the floor map of the first embodiment of the present invention;

Fig. 4 B is the diagrammatic cross-section of the first embodiment of the present invention;

Fig. 5 is the diagrammatic cross-section of the second embodiment of the present invention;

Fig. 6 is the diagrammatic cross-section of the third embodiment of the present invention;

Fig. 7 is the floor map of the fourth embodiment of the present invention;

Fig. 8 is the floor map of the fifth embodiment of the present invention;

Fig. 9 is the floor map of the sixth embodiment of the present invention;

Figure 10 is the floor map of the seventh embodiment of the present invention;

Figure 11 A, 11B are the synoptic diagram that concerns of call wire of the present invention and guard electrode;

Figure 12 is LCD of the present invention and known S-IPS, AS-IPS LCD, the graph of a relation of its penetrance and operating voltage;

Figure 13 A is known S-IPS LCD, its photoelectric characteristic figure;

Figure 13 B is known AS-IPS LCD, its photoelectric characteristic figure; And

Figure 13 C, 13D are the photoelectric characteristic figure of LCD of the present invention.

[embodiment]

Detailed content of the present invention and embodiment will be illustrated by each following preferred embodiment.It should be noted that each following preferred embodiment, its purpose only is detailed content of the present invention and embodiment are described, makes it be easy to be understood by the people, is not in order to limit the present invention.

A kind of LCD with transverse electric field that it provided, can be described as AS-NOOC (AdvancedSuper No Overcoat) LCD again, its be with the AS-IPS LCD serve as the basis to improve, and through special configuration of electrodes, avoiding the use of flatness layer (Overcoat Layer), with the problem of aperture opening ratio, yield and the manufacturing cost of improving known AS-IPS.

At first, basic framework of the present invention as shown in Figure 3.AS-NOOC LCD of the present invention comprises: first substrate 31 respect to one another and second substrate 32, and a liquid crystal layer is sandwiched between the above-mentioned two substrates.On first substrate 31, be formed with several right guard electrodes (Shielding Electrodes) 311, and a gate insulation layer (Gate Insulating Layer) 33 linings thereon.Several data lines (Data Lines) 312 are configured on this gate insulation layer 33, and each bar data line 312 also is configured in corresponding this between the guard electrode 311.One passivation layer (Passivation Layer) 34 is formed on the above-mentioned guard electrode 311, and is coated on whole first substrate 31, suffers the infringement of moisture etc. or other pollution source to avoid guard electrode 311.Shared electrode (Common Electrodes) is made of a first 313 and a second portion 316.The first 313 of shared electrode is to be formed on the passivation layer 34, and corresponds to this to guard electrode 311, and first 313 has more a slit 314a corresponding to data line 312.In addition, pixel electrode (Pixel Electrodes) 315 also is formed on the passivation layer 34, and the second portion 316 of shared electrode then is seated between the contiguous pixel electrode 315.

On second substrate 32, then be formed with counter electrode (Counter Electrodes) 321, and also correspond respectively to the data line 312 that is positioned at first substrate 31.In this embodiment, counter electrode 321 is made by opaque electrode material, and serves as black matrix (Black Matrix) and use, to avoid the generation of light leakage phenomena.In addition, counter electrode 321 also can be made by transparent electrode material, yet the use of the black matrix of must arranging in pairs or groups again can allow it bring into play the effect of shading.

See also Fig. 4 A, 4B, it is respectively the plane and the diagrammatic cross-section of first embodiment of the invention.One AS-NOOC LCD 4 comprises: first substrate 41 respect to one another and second substrate 42.Shown in Fig. 4 A, on first substrate 41, dispose the first 413 (413a, 413b) of several guard electrodes 411, data line 412a, gate line 412b and shared electrode.Each bar data line 412a is between this of correspondence is to guard electrode 411, and the 0th part 413 of each this shared electrode, has one first slit 414a and one second slit 414b, and its position is to correspond respectively to data line 412a and gate line 412b.In addition, the first slit 414a and the second slit 414b completely cut off and not intercommunication mutually each other.Its preferably, AS-NOOC LCD of the present invention more comprises at least one call wire 420, and it is parallel to this gate line 412b, and is separated with a spacing with this gate line 412b.

Shown in Fig. 4 B; it is that Fig. 4 A is along A '-A " diagrammatic cross-section of line; the first 413 of guard electrode 411, gate insulation layer 43, data line 412a, first passivation layer 44, shared electrode; second portion 416; pixel electrode 415 and first both alignment layers 45 is to be formed in regular turn on first substrate 41.Wherein, the second portion 416 of shared electrode is between two adjacent pixel electrodes 415, and identical with first 413 be all to be applied with one to share voltage (Common Voltage).

And on second substrate 42, then form counter electrode 421, look resistance layer 46, second passivation layer 47 and second both alignment layers 48 respectively.Counter electrode 421 is applied with a fixed voltage (Fixed Voltage), and its preferably is a shared voltage.By the effect of counter electrode 421, liquid crystal layer 40 its horizontal component of electric fields (Horizontal Electric Field) that are sandwiched in 42 of first substrate 41 and second substrates are strengthened.

Its preferably, this guard electrode 411 can apply a fixed voltage, or makes its state that is in unsteady (Floating Voltage), with the electric field influence pixel region of protected data line 412a.In addition, this guard electrode 411 also can be made by opaque conductive material, can reach preferable shaded effect.

In the present embodiment, call wire 420 is shared voltage if be applied with one, and then guard electrode 411 can be quick condition, or identical with call wire 420, also can be share voltage.And counter electrode 421 also can be made by opaque electrode material, and serve as black matrix (Black Matrix) and use, to avoid the generation of light leakage phenomena.In a preferred embodiment, the 413a of first of this shared electrode, second portion 416 and pixel electrode 415 can be made by transparent electrode material.In addition, data line 412a and this horizontal range H, the scope of suggestion between 0.1～10.0 μ m, and the vertical range V between data line 412a and the 413a of this first, the scope of suggestion between 0.1～2.8 μ m to 411 of guard electrodes.

In addition, also have a kind of selection to be, counter electrode is made by transparent electrode material.See also Fig. 5, it is the diagrammatic cross-section of second embodiment of the invention.In the present embodiment, a transparent counter electrode 521 is to apply a fixed voltage or to share voltage, and with the electric field influence pixel region of protected data line, and transparent counter electrode 521 is corresponding with the data line on this first substrate.In addition, for fear of light leak, suggestion is on second substrate 52, and matrix 522 is deceived in configuration one, and the look resistance layer 56 and second passivation layer 57 are then overlayed on this second substrate 52 in regular turn, and 521 of transparent counter electrodes are to be disposed on this second passivation layer 57.In addition, transparent counter electrode 521 also can be covered by second both alignment layers 58, to avoid moisture attack.

See also Fig. 6, it is the diagrammatic cross-section of third embodiment of the invention.Be that in the present embodiment, a transparent counter electrode 621 is directly to be disposed on the resistance layer 66 of the same colour, is covered by one second passivation layer 67, further to protect transparent counter electrode 621 again with the different place of second embodiment.

Except the counter electrode on second substrate is carried out the permutation and combination, the present invention further provides, and is positioned at the various electrode on first substrate, and its surface configuration and combination are to obtain preferable technique effect.

Please consult Fig. 4 A again, the first 413 of this shared electrode, it is by being constituted along the 413a of first of a direction and the 413b of first along the b direction, and a direction is to be different directions with the b direction.As mentioned above, 413a of first and 413b, have respectively along the first slit 414a of a direction and the second slit 414b, and correspond to this data line 412a and gate line 412b respectively, in order to reduction stray capacitance (Parasitic Capacitance) effect along the b direction.In this embodiment, first slit 414a of a direction and the second slit 414b of b direction, isolated mutually each other, and be applied with a shared voltage in the first 413 of this shared electrode.

See also Fig. 7, it is the floor map of fourth embodiment of the invention.In the present embodiment, the first 713 of this shared electrode, it is by being constituted along the 713a of first of a direction and the 713b of first along the b direction, and a direction is to be different directions with the b direction.As mentioned above, 713a of first and 713b have respectively along the first slit 714a of a direction and the second slit 714b along the b direction, and correspond to this data line 712a and gate line 712b respectively, with the reduction parasitic capacitance effect.In this embodiment, the first slit 714a of a direction runs through whole a direction, and with the second slit 714b of b direction, isolated mutually each other.In the present embodiment, more comprise a contact hole 725,, share voltage in the first 713 of this shared electrode so can apply one in order to electrically connect the 713a of first of this call wire 720 and this shared electrode.

See also Fig. 8, it is the floor map of fifth embodiment of the invention.In the present embodiment, the first 813 of this shared electrode, it is by being constituted along the 813a of first of a direction and the 813b of first along the b direction, and a direction is to be different directions with the b direction.As mentioned above, 813a of first and 813b have respectively along the first slit 814a of a direction and the second slit 814b along the b direction, and correspond to this data line 812a and gate line 812b respectively, with the reduction parasitic capacitance effect.In this embodiment, the second slit 814b of b direction runs through whole b direction, and with the first slit 814a of a direction, isolated mutually each other.In the present embodiment, more comprise a contact hole 825,, share voltage in the first 813 of this shared electrode so can apply one in order to electrically connect the 813a of first of this call wire 820 and this shared electrode.

See also Fig. 9, it is the floor map of sixth embodiment of the invention.In the present embodiment, the first 913 of this shared electrode, it is by being constituted along the 913a of first of a direction and the 913b of first along the b direction, and a direction is to be different directions with the b direction.As mentioned above, 913a of first and 913b have respectively along the first slit 914a of a direction and the second slit 914b along the b direction, and correspond to this data line 912a and gate line 912b respectively, with the reduction parasitic capacitance effect.In this embodiment, the first slit 914a of a direction runs through whole a direction, and the second slit 914b of b direction runs through whole b direction, so it interlinks each other.In the present embodiment, more comprise a contact hole 925,, share voltage in the first 913 of this shared electrode so can apply one in order to electrically connect the 913a of first of this call wire 920 and this shared electrode.

See also Figure 10, it is the floor map of seventh embodiment of the invention.In the present embodiment; the second portion 1016 of the first 1013 of guard electrode 1011, data line 1012, shared electrode, the first slit 1014a, pixel electrode 1015, shared electrode and the black matrix (not being shown in figure) that is arranged in second substrate; wherein arbitrary zigzag structure that all can be, its material comprise metal, resin or other has the complex of shade function.This kind design can effectively reduce the aberration phenomenon of LCD.

See also Figure 11 A, 11B, it is surface configuration and combination synoptic diagram between call wire of the present invention and guard electrode.Shown in Figure 11 A, guard electrode 1111a and the call wire 1120a spacing G of being separated by, under this kind surface configuration and combination, if when the voltage of call wire 1120a is share voltage, the guard electrode 1111a of this moment then is a quick condition.Yet, if between guard electrode 1111b and call wire 1120b, shown in Figure 11 B, be for directly link to each other the person also can, this kind surface configuration with make up under, guard electrode 1111b is identical with the voltage of call wire 1120b.

See also Figure 12, it is known S-IPS, the AS-IPS and the optical characteristics figure of AS-NOOC LCD of the present invention, and wherein transverse axis is that operating voltage (Voltage), d-axis are penetrance (Transmittance).The AS-NOOC LCD, the value that its penetrance is the highest, close with the AS-IPS LCD, be about about 0.18.Yet AS-NOOC operation of LCD voltage is about 7 volts, and the AS-IPS LCD is about 7.5 volts, shows that the AS-NOOC LCD except that aforesaid advantage, also has the effect of optical efficiency height, power and energy saving.In addition, if the AS-NOOC LCD is compared with the optical curve of S-IPS LCD, then except that operating voltage was low, its penetrance also outclassed LCD.Therefore, handle, believe to obtain better optical characteristics if again the AS-NOOC LCD is made optimization.

Figure 13 A～Figure 13 B then is further more known S-IPS, AS-IPS and AS-NOOC LCD of the present invention, its photoelectric characteristic figure.Wherein, Figure 13 A corresponds to the S-IPS LCD, and Figure 13 B corresponds to the AS-IPS LCD, and 13C, 13D figure then corresponds to the AS-NOOC LCD.At the photoelectric characteristic figure of above-mentioned various LCD with transverse electric field, will distinctly discuss as after.

Please consult Figure 13 A again, it is the photoelectric characteristic figure of known S-IPS LCD.Wherein, all counter electrodes, guard electrode, data line, shared electrode comprise first and second portion, pixel electrode, and its characteristic all is set at transparent conductive material and carries out emulation, with the convenient light leak scope of observing.Under this condition, the light leak zone of S-IPS LCD when dark attitude is respectively seated in the scope of 5～30 μ m and 100～125 μ m.Therefore, if desire solves this light leak problem, then the scope of required black matrix should be equivalent to aforesaid range size, and this range size is bigger comparatively speaking, and can be caused the aperture opening ratio of S-IPS LCD lower, and is difficult to improve.This mainly be because, the S-IPS LCD, near the line of electric force of its noise data line is a divergence curve, so the liquid crystal molecule on the wayward correspondence position, promptly uncontrolled liquid crystal molecule zone is bigger.

Please consult Figure 13 B again, it is the photoelectric characteristic figure of known AS-IPS LCD.Wherein, all counter electrodes, guard electrode, data line, shared electrode comprise first and second portion, pixel electrode, and its characteristic all is set at transparent conductive material and carries out emulation.Under this condition, the AS-IPS LCD does not have any light leakage phenomena to produce when dark attitude.Yet in order to overcome the AS-IPS LCD, the shortcoming of its capacitance-resistance sluggishness (RC Delay) certainly will will increase the thickness of flatness layer, and on pixel electrode, the anxiety that causes unexpected capacitance coupling effect (CapacitanceCoupling Effect) be arranged.

Please consult Figure 13 C again, it is the photoelectric characteristic figure of AS-NOOC LCD of the present invention.Wherein, all counter electrodes, guard electrode, data line, shared electrode comprise first and second portion, pixel electrode, and its characteristic all is set at transparent conductive material and carries out emulation.Under this condition, the light leak zone of AS-NOOC LCD when dark attitude is respectively seated in the scope of 10～25 μ m and 105～120 μ m, and be little than the light leak zone of Figure 13 A S-IPS LCD.Therefore, black matrix that the AS-NOOC LCD is required or black matrix, its scope is also little than the S-IPS LCD, so can improve the aperture opening ratio of AS-NOOC LCD.This mainly is because because the AS-NOOC LCD has the cause of counter electrode, the line of electric force of its noise is limited to concentrate on the zone between data line and counter electrode, so can reduce uncontrolled liquid crystal molecule zone.

What is more, please consults Figure 13 D again, and it is the photoelectric characteristic figure of AS-NOOC LCD of the present invention.Wherein, all counter electrodes, guard electrode and data line, its characteristic all is set at opaque conductive material, and shared electrode and pixel electrode then are set at transparent conductive material, to carry out the artificial actual situation.This shows that under actual conditions, AS-NOOC is under dark attitude, and is the same with AS-IPS, the situation that does not have oblique light leakage produces, and the electrology characteristic of Figure 13 C and Figure 13 D is identical, does not repeat them here.

In addition; compare AS-NOOC and known AS-IPS LCD again; slit and guard electrode design by shared electrode; can reduce the phenomenon of capacitance-resistance sluggishness; and make flatness layer no longer become the necessary assembly of AS-IPS LCD; become AS-NOOC LCD provided by the present invention, and can reduce the cost of flatness layer, and further improve the yield of making.

In view of the above, the invention provides a kind of LCD with transverse electric field of novelty, can be described as the AS-NOOC LCD again, it is by the arrangement of guard electrode and counter electrode, and can avoid the coupling effect on the data line.Therefore, can solve the crosstalk problem in the known LCD with transverse electric field, and it also can reduce the problem of capacitance-resistance sluggishness effectively.In addition, the present invention also can avoid the light leak on the oblique angle direction, so can make the optical characteristics of whole liquid crystal panel, maintains the level of AS-IPS LCD.What is more, and via particular design of the present invention, the flatness layer in the AS-IPS LCD had been lost the necessity of its existence already, and can have been reduced material cost effectively, aspect processing procedure, also can reduce the expenditure of manufacturing cost, and can improve the production yield simultaneously.

In sum; the invention provides a kind of LCD with transverse electric field; a kind of third generation LCD with transverse electric field that does not have flatness layer particularly is provided; it has: one first substrate; one second substrate; one liquid crystal layer is sandwiched in the aforementioned two substrates; several gate lines; a data line and a pixel region are to be disposed on this first substrate; one subtend electrode is to be disposed on this second substrate and corresponding to this data line; this pixel region more comprises: a pixel electrode; a pair of guard electrode and one is shared electrode; by the arrangement of guard electrode and counter electrode, can reduce on the data line via the coupling effect that applies due to the pixel voltage.AS-NOOC LCD of the present invention, except having novelty and progressive, the also value on the industry simultaneously.

At last, though AS-NOOC LCD of the present invention, its electrode kenel disclose in detail as before, yet along with the utilization of actual product, still have other variation that does not break away from ultimate principle of the present invention, also should belong to scope of the present invention.。

[primary clustering symbol description]

The A outer peripheral areas

The G spacing

The H horizontal range

The V vertical range

4 AS-NOOC liquid crystal displays

26 flatness layers

34 passivation layers

44 first passivation layers

45 first both alignment layers

24,25 both alignment layers

23,40 liquid crystal layers

33,43 gate insulation layer

11,21,31,41 first substrates

48,58 second both alignment layers

12,22,32,42,52 second substrates

46,56,66 look resistance layers

47,57,67 second passivation layers

The 314a slit

121,221 black matrixes

522 black matrixes

321,421 counter electrodes

521,621 transparent counter electrodes

113,212,313,413,1013 firsts

115,214,316,416,1016 second portions

114,213,215,315,415,1015 pixel electrodes

116,725,825,925 contact holes

413a, 713a, 813a, 913a is along the first of a direction

413b, 713b, 813b, 913b is along the first of b direction

414b, 714b, 814b, 914b second slit

111,412b, 712b, 812b, 912b gate line

414a, 714a, 814a, 914a, 1014a first slit

311,411,1011,1111a, 1111b guard electrode

112,211,312,1012,412a, 712a, 812a, 912a data line

420,720,820,920,1120a, 1120b call wire

Claims

1. LCD with transverse electric field, comprise: first substrate, second substrate, liquid crystal layer, it is sandwiched between this first substrate and this second substrate, several gate lines and several data lines, it is disposed on this first substrate, and it is interlaced with each other to center on formation one pixel region, pixel electrode, it is disposed on this first substrate, and is positioned among this pixel region; This LCD with transverse electric field is characterized in that: comprise:

One subtend electrode is disposed on this second substrate, and to one of should data line;

A pair of guard electrode is disposed on this first substrate, and wherein one of this data line is between this is to guard electrode; And

One shares electrode, has a first and a second portion, is disposed on this first substrate, and wherein this first has one first slit, and it is corresponding to one of this data line, and this second portion is to be positioned among this pixel region, and is adjacent to this pixel electrode.

2. LCD with transverse electric field as claimed in claim 1 is characterized in that: this first has one second slit, and it is corresponding to one of this gate line.

3. LCD with transverse electric field as claimed in claim 2 is characterized in that: this first slit and this second slit, and isolated mutually each other, and not intercommunication.

4. LCD with transverse electric field as claimed in claim 1 is characterized in that: also comprise a call wire and be disposed on this first substrate, and be separated by with this gate line.

5. LCD with transverse electric field as claimed in claim 4 is characterized in that: this guard electrode is to be connected with this call wire.

6. LCD with transverse electric field as claimed in claim 4 is characterized in that: also comprise a contact hole and connect this call wire and this first.

7. LCD with transverse electric field as claimed in claim 4 is characterized in that: this call wire is to be applied with one to share voltage.

8. LCD with transverse electric field as claimed in claim 1 is characterized in that: this guard electrode is to be in quick condition.

9. LCD with transverse electric field as claimed in claim 1 is characterized in that: this shared electrode is to be applied with a fixed voltage or to share voltage.

10. LCD with transverse electric field as claimed in claim 1 is characterized in that: this counter electrode is to be applied with a fixed voltage or to share voltage.

11. LCD with transverse electric field as claimed in claim 1 is characterized in that: this first is a transparency electrode.

12. LCD with transverse electric field as claimed in claim 1 is characterized in that: this second portion is to be a transparency electrode.

13. LCD with transverse electric field as claimed in claim 1 is characterized in that: this pixel electrode is to be a transparency electrode.

14. LCD with transverse electric field as claimed in claim 1 is characterized in that: this guard electrode is to be an opaque electrode.

15. LCD with transverse electric field as claimed in claim 1 is characterized in that: this counter electrode is to be an opaque electrode.

16. LCD with transverse electric field as claimed in claim 1 is characterized in that: this counter electrode is to be a transparency electrode.

17. LCD with transverse electric field as claimed in claim 16 is characterized in that: also comprise a black matrix configuration between second substrate and this counter electrode.

18. LCD with transverse electric field as claimed in claim 17 is characterized in that: this black matrix is to be zigzag.

19. LCD with transverse electric field as claimed in claim 1 is characterized in that: one of them is to be zigzag for this counter electrode, this guard electrode, this data line, this first, this second portion and this pixel electrode.

20. LCD with transverse electric field as claimed in claim 1 is characterized in that: one of this data line and this also have a horizontal range between the guard electrode, and its scope is between 0.1～10.0 μ m.

21. LCD with transverse electric field as claimed in claim 1 is characterized in that: between one of this data line and this first, also have a vertical range, its scope is between 0.1～2.8 μ m.