CN100500924C - Method for preparing metal nano-crystal thin film - Google Patents
Method for preparing metal nano-crystal thin film Download PDFInfo
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- CN100500924C CN100500924C CNB2006101095625A CN200610109562A CN100500924C CN 100500924 C CN100500924 C CN 100500924C CN B2006101095625 A CNB2006101095625 A CN B2006101095625A CN 200610109562 A CN200610109562 A CN 200610109562A CN 100500924 C CN100500924 C CN 100500924C
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CNB2006101095625A CN100500924C (en) | 2006-08-10 | 2006-08-10 | Method for preparing metal nano-crystal thin film |
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CNB2006101095625A CN100500924C (en) | 2006-08-10 | 2006-08-10 | Method for preparing metal nano-crystal thin film |
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CN101122006A CN101122006A (en) | 2008-02-13 |
CN100500924C true CN100500924C (en) | 2009-06-17 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101800242B (en) * | 2009-02-11 | 2013-03-06 | 中国科学院微电子研究所 | Nano electron device using nanocrystal material as Coulomb island and manufacture method thereof |
US8652649B2 (en) * | 2009-07-10 | 2014-02-18 | Xtalic Corporation | Coated articles and methods |
CN102244193A (en) * | 2010-05-13 | 2011-11-16 | 复旦大学 | Ruthenium (Ru)-doped tantalum oxide based resistive memory and preparation method thereof |
CN102227014A (en) * | 2011-03-28 | 2011-10-26 | 复旦大学 | Resistive random access memory possessing metal nanocrystalline electrode and preparation method thereof |
CN102806354A (en) * | 2012-07-31 | 2012-12-05 | 东南大学 | Method for preparing gold nanoparticles by annealing of gold film |
CN103074627A (en) * | 2013-01-17 | 2013-05-01 | 中国科学院微电子研究所 | Method for preparing compound semiconductor sensitive membrane based on replacement reaction-thermal oxidation method |
CN103128303A (en) * | 2013-02-28 | 2013-06-05 | 北京科技大学 | Method for preparing nanogold by vapor deposition process |
CN104630772A (en) * | 2013-11-12 | 2015-05-20 | 中国科学院物理研究所 | Multilayer stacked metal nanosphere array and preparation method thereof |
CN104357800B (en) * | 2014-10-20 | 2017-02-15 | 西安交通大学 | Nanometer silicon film cathode and manufacturing method thereof |
CN104600102B (en) * | 2014-12-24 | 2017-08-25 | 上海师范大学 | A kind of Sb/Si heterostructure semiconductors nano-crystal film and preparation method and application |
CN105862007B (en) * | 2016-04-12 | 2018-08-10 | 西安交通大学 | A method of generating Cu triangle crystal in Cu thin film systems |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1096061A (en) * | 1993-05-29 | 1994-12-07 | 中国科学院金属研究所 | Deposition of high melting metal carbonide nanometre crystal by sputtering |
CN1128188A (en) * | 1995-09-29 | 1996-08-07 | 中国科学院固体物理研究所 | Size-controllable preparation method of nanometer-level silver |
US6787434B1 (en) * | 2003-04-01 | 2004-09-07 | National Taiwan University | Method of fabricating polysilicon film by nickel/copper induced lateral crystallization |
CN1545152A (en) * | 2003-11-26 | 2004-11-10 | 中国科学院上海微系统与信息技术研究 | Method for preparing phase-changing film material nanometer wire |
CN1552547A (en) * | 2003-06-05 | 2004-12-08 | 中国科学院理化技术研究所 | Preparing method for cubic silver nanometer grain |
CN1654688A (en) * | 2005-03-04 | 2005-08-17 | 东南大学 | Method for preparing high density nano metal material |
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2006
- 2006-08-10 CN CNB2006101095625A patent/CN100500924C/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1096061A (en) * | 1993-05-29 | 1994-12-07 | 中国科学院金属研究所 | Deposition of high melting metal carbonide nanometre crystal by sputtering |
CN1128188A (en) * | 1995-09-29 | 1996-08-07 | 中国科学院固体物理研究所 | Size-controllable preparation method of nanometer-level silver |
US6787434B1 (en) * | 2003-04-01 | 2004-09-07 | National Taiwan University | Method of fabricating polysilicon film by nickel/copper induced lateral crystallization |
CN1552547A (en) * | 2003-06-05 | 2004-12-08 | 中国科学院理化技术研究所 | Preparing method for cubic silver nanometer grain |
CN1545152A (en) * | 2003-11-26 | 2004-11-10 | 中国科学院上海微系统与信息技术研究 | Method for preparing phase-changing film material nanometer wire |
CN1654688A (en) * | 2005-03-04 | 2005-08-17 | 东南大学 | Method for preparing high density nano metal material |
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CN101122006A (en) | 2008-02-13 |
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Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130417 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130417 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130417 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |