CN100499964C - Etching reactive tank - Google Patents

Etching reactive tank Download PDF

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Publication number
CN100499964C
CN100499964C CNB2004100277805A CN200410027780A CN100499964C CN 100499964 C CN100499964 C CN 100499964C CN B2004100277805 A CNB2004100277805 A CN B2004100277805A CN 200410027780 A CN200410027780 A CN 200410027780A CN 100499964 C CN100499964 C CN 100499964C
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CN
China
Prior art keywords
etching
etching reaction
reaction tank
projections
etching solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2004100277805A
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Chinese (zh)
Other versions
CN1710147A (en
Inventor
陈青枫
黄荣龙
黄昌桂
欧振宪
黄志鸿
高胜洲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Innolux Corp
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Innolux Corp
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Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Innolux Corp filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CNB2004100277805A priority Critical patent/CN100499964C/en
Publication of CN1710147A publication Critical patent/CN1710147A/en
Application granted granted Critical
Publication of CN100499964C publication Critical patent/CN100499964C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The invention discloses a etch reaction socket which includes a reaction cavity, a etch liquor transport tube and a liquor outlet port. On the bottom of the reaction socket there are several bulges.

Description

Etching reaction tank
[technical field]
The invention relates to a kind of semiconductor equipment, particularly about a kind of etching reaction tank.
[background technology]
In the manufacture process of semiconductor chip, can be coated with the thin layer that some have protective effect, this thin layer be removed if need when crawling or thickness are not inconsistent in semiconductor chip surface.Comparatively extensively produce the plasma that is used in chip manufacture with present industry and remove method, though its plasma surface treatment can effectively be removed this thin layer, and do not influence the intensity of chip, but the processing area of this method is less, it is longer to expend time in, so cause production capacity lower, and can produce the compound that is combined into by multiple material, thereby influence subsequent treatment and final product performance at chip surface.So removing method, plasma only is suitable for laboratory, a small amount of or local disposition of removing.
At present, removing above-mentioned thin layer preferred methods is that method is removed in etching.Existing a kind of etching technique is to utilize the chemical reaction that is carried out between specific etching solution and film to remove the part that film is not covered by photoresistance, reaches the etching purpose, and this etching mode is Wet-type etching.Wet-type etching need carry out in a reactive tank, and this reactive tank is etching reaction tank.
A kind of etching reaction tank of prior art can be with reference to Fig. 1, and this etching reaction tank 1 comprises an etching reaction cavity 10, a plurality of roller bearing 16, an etching solution conveyance conduit 12 and etching solution outlet 15.
During 1 work of the prior art etching reaction tank, one treats that etching object 5 is placed on these a plurality of roller bearings 16, and about under the drive of these a plurality of roller bearings 16, roll, etching solution required in the etching reaction is by this etching solution conveyance conduit 12, enter this etching reaction cavity 10 from this etching solution outlet 15, etching solution in this etching reaction cavity 10 and this treat that chemical reaction takes place etching object 5, thereby this is treated that the film etching that needs etching to remove on the etching object 5 falls.
The etching reaction tank 1 of the prior art, its defective is: along with constantly carrying out of etching reaction, this treats that near the etchant concentration the etching object 5 reduces gradually, but because the etching solution flow efficiency in this etching reaction cavity 10 is lower, so this treats that near the etchant concentration the etching object 5 can not get in time replenishing, thereby causes etched inhomogeneities.
[summary of the invention]
For overcoming the uneven problem of prior art etching reaction trench etch, the object of the present invention is to provide a kind of etching etching reaction tank uniformly.
Etching reaction tank of the present invention comprises an etching reaction cavity, an etching solution conveyance conduit and etching solution outlet, this etching reaction cavity is surrounded by the side of this etching reaction tank and bottom surface and forms, this etching solution conveyance conduit is connected with this etching reaction groove bottom, this etching solution outlet is arranged on the center position of this etching reaction cavity bottom, and the etching solution that is used for reacting enters this etching reaction cavity by this etching solution conveyance conduit from this etching solution outlet.Wherein, have a plurality of projections on the bottom surface of this etching reaction tank.
Compared with prior art, etching reaction tank of the present invention has a plurality of projections on its bottom surface, and in the etching reaction, these a plurality of projections can be improved the flow efficiency of etching solution in the etching reaction tank, improve the etching reaction quality, thereby make etching reaction tank of the present invention have preferable etch effect; Simultaneously, because these a plurality of projections itself occupy certain space, thereby make the etching reaction cavity volume of this etching reaction tank diminish, need the chemicals quantity of interpolation to reduce for obtaining same etch liquid concentration this moment, thus the use that can save chemicals.
[description of drawings]
Fig. 1 is a kind of floor map of prior art etching reaction tank.
Fig. 2 is the floor map of etching reaction tank of the present invention.
Fig. 3 is the stereogram of etching reaction tank of the present invention.
[embodiment]
Please consult Fig. 2 and Fig. 3 simultaneously, Fig. 2 is the floor map of etching reaction tank of the present invention, and Fig. 3 is the stereogram of etching reaction tank of the present invention.Etching reaction tank 3 of the present invention comprises an etching reaction cavity 30, an etching solution conveyance conduit 32 and etching solution outlet 35.
The etching reaction cavity 30 of etching reaction tank 3 of the present invention is surrounded with bottom surface 39 by the side 33 of this etching reaction tank 3 and forms, this etching solution conveyance conduit 32 is connected with the bottom surface 39 of this etching reaction tank 3, this etching solution outlet 35 is arranged on the center position of these etching reaction cavity 30 bottoms, and this etching solution outlet 35 around have a plurality of barriers 37; Have a plurality of roller bearings 36, in this etching reaction cavity 30 and treat that etching object 7 is placed on these a plurality of roller bearings 36.The manufactured materials of this etching reaction tank 3 is poly-difluoroethylene; Wherein, have a plurality of projections 301 on the bottom surface 39 of this etching reaction tank 3, the manufactured materials of these a plurality of projections 301 is poly-difluoroethylene, and it is shaped as trapezoidal, cylindrical, taper shape or triangle, and these a plurality of projections 301 evenly are arranged on the bottom surface 39 of this etching reaction tank 3.
The operation principle of etching reaction tank 3 of the present invention is, etching solution is sent into by an etching solution conveyance conduit 32 in the etching reaction cavity 30 of this etching reaction tank 3 by a pump (figure does not show), one treats that etching object 7 is placed on these a plurality of roller bearings 36, and about under the drive of these a plurality of roller bearings 36, roll, etching solution in this etching reaction cavity 30 and this treat that chemical reaction takes place etching object 7, thereby this is treated that the film etching that needs etching to remove on the etching object 7 falls.
In the etching reaction process, along with constantly carrying out of etching reaction, the etchant concentration in this etching reaction cavity 30 can change.Wherein, treat that near this near etching solution etching object 7 is more owing to consuming, therefore this treats that near the etchant concentration the etching object 7 is low than the etchant concentration of all the other positions in this etching reaction cavity 30, if untimelyly replenish this and treat near the etching object 7 etchant concentration will cause the uneven phenomenon of etching to take place.
Have a plurality of projections 301 on the bottom surface 39 of etching reaction tank 3 of the present invention, being provided with of these a plurality of projections 301 will improve the flow efficiency of etching solution in this etching reaction cavity 30.At first, etching solution enters this etching reaction cavity 30 from this etching solution outlet 35 by this etching solution conveyance conduit 32, owing to have a plurality of barriers 37 around this etching solution outlet 35, this etching solution is under these a plurality of barrier 37 effects, to the diffusion all around of this etching reaction cavity 30.So being provided with of these a plurality of barriers 37 is beneficial to etching solution evenly diffusion in this etching reaction cavity 30.Secondly, in etching process, for the etchant concentration in the whole etching reaction cavity 30 is evenly distributed, often can achieve the goal by suitable stirring, after on the bottom surface 39 of this etching reaction tank 3 a plurality of projections 301 being set, can reaching equally and make etching solution be uniformly distributed in purpose in this etching reaction cavity 30.After these these a plurality of projections 301 of etching solution collision, to change flow direction and mobile toward the top of this etching reaction cavity 30, quicken the convection current of etching solution in the whole etching reaction cavity 30, reactive material in the etching solution treats that toward this quality transmission of carrying out on surface of etching object 7 will rely on the diffusion of etching solution no longer fully at this moment, and can improve the past transmittability for the treatment of etching object 7 of reactive material in the etching solution by the convection current of etching solution, therefore can improve etchant concentration everywhere in this etching reaction cavity 30, make the etchant concentration in this etching reaction cavity 30 have higher uniformity, thereby obtain preferable etch effect.Simultaneously, because these a plurality of projections 301 itself have certain volume, make the internal capacity of this etching reaction cavity 30 diminish, will reduce for the chemicals input amount that obtains the required interpolation of same etch liquid concentration this moment, thus the use of saving chemicals.

Claims (9)

1. etching reaction tank, it comprises an etching solution conveyance conduit, etching solution outlet and an etching reaction cavity, this etching reaction cavity is surrounded by the side of this etching reaction tank and bottom surface and forms, this etching solution conveyance conduit is connected with this etching reaction groove bottom, this etching solution outlet is arranged on the center position of this etching reaction cavity bottom, the etching solution that is used for reacting enters this etching reaction cavity by this etching solution conveyance conduit from this etching solution outlet, it is characterized in that: have a plurality of projections on the bottom surface of this etching reaction tank.
2. etching reaction tank as claimed in claim 1 is characterized in that: the manufactured materials of these a plurality of projections is poly-difluoroethylene.
3. etching reaction tank as claimed in claim 1 is characterized in that: these a plurality of projections evenly are arranged in the bottom surface of this etching reaction tank.
4. etching reaction tank as claimed in claim 1 is characterized in that: being shaped as of these a plurality of projections is trapezoidal.
5. etching reaction tank as claimed in claim 1 is characterized in that: being shaped as of these a plurality of projections is cylindrical.
6. etching reaction tank as claimed in claim 1 is characterized in that: these a plurality of projections be shaped as taper shape.
7. etching reaction tank as claimed in claim 1 is characterized in that: these a plurality of projections be shaped as triangle.
8. etching reaction tank as claimed in claim 1 is characterized in that: the manufactured materials of this etching reaction tank is poly-difluoroethylene.
9. etching reaction tank as claimed in claim 1 is characterized in that: have a plurality of barriers around this etching solution outlet.
CNB2004100277805A 2004-06-19 2004-06-19 Etching reactive tank Expired - Lifetime CN100499964C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004100277805A CN100499964C (en) 2004-06-19 2004-06-19 Etching reactive tank

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100277805A CN100499964C (en) 2004-06-19 2004-06-19 Etching reactive tank

Publications (2)

Publication Number Publication Date
CN1710147A CN1710147A (en) 2005-12-21
CN100499964C true CN100499964C (en) 2009-06-10

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CNB2004100277805A Expired - Lifetime CN100499964C (en) 2004-06-19 2004-06-19 Etching reactive tank

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CN (1) CN100499964C (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2727190Y (en) * 2004-07-24 2005-09-21 鸿富锦精密工业(深圳)有限公司 Etching reaction tank

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2727190Y (en) * 2004-07-24 2005-09-21 鸿富锦精密工业(深圳)有限公司 Etching reaction tank

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