CN100495757C - Method for manufacturing organic thin film transistor, and organic thin film transistor and sheet thereof manufactured by such method - Google Patents
Method for manufacturing organic thin film transistor, and organic thin film transistor and sheet thereof manufactured by such method Download PDFInfo
- Publication number
- CN100495757C CN100495757C CNB2004800382208A CN200480038220A CN100495757C CN 100495757 C CN100495757 C CN 100495757C CN B2004800382208 A CNB2004800382208 A CN B2004800382208A CN 200480038220 A CN200480038220 A CN 200480038220A CN 100495757 C CN100495757 C CN 100495757C
- Authority
- CN
- China
- Prior art keywords
- otft
- layer
- semiconductor layer
- record
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Abstract
An organic thin film transistor sheet of the invention is characterized in that a method for manufacturing an organic thin film transistor is provided wherein after formation of a layer containing a thermoplastic semiconductor material and another layer joined thereto and containing metal particles, the layers are pressed and then heated, or alternatively pressed and heated at the same time, so as to be formed into a semiconductor layer, a source electrode and a drain electrode, and a plurality of organic thin film transistors are connected via a gate bus line and a source bus line on a supporting sheet, and at least a part of a metal phase constituting the source electrode and drain electrode of each thin film transistor is mixed into a semiconductor layer containing a thermoplastic semiconductor material, so that the electrodes are joined to the semiconductor layer.
Description
Technical field
The present invention relates to OTFT and manufacture method thereof.
Background technology
In recent years, the various OTFT of organic semi-conductor had been proposed to be used for.OTFT (TFT) adopts plastic support, actively researchs and develops as easy operation elements that can make, that be fit to display and electronic bar code such as using printing.As OTFT, developed all-polymer type organic tft technology (for example, referring to patent documentation 1).
In addition, OTFT now, must suppress contact resistance to lower with source electrode, drain electrode and organic semiconductor layer, so general gold, platinum of adopting, or implement heavily doped electric conductive polymer, the complex of polyethylene dioxythiophene and polystyrolsulfon acid (for example, referring to patent documentation 2) for example.
In the technology of patent documentation 1, the scheme that has proposed to adopt the simple and easy operation of ink-jet or coating to make, but exist resulting organic tft gate voltage height, switch to be in problems such as current value ON/OFF value low, electric current under the ON state is low.
In addition, when adopting the electrode of record in the patent documentation 2, low with the cementability and the mechanical strength of supporter, the durability of element has problem.Therefore, on flexible substrate, be difficult to realize carrying out the organic tft device of operating stably.In addition, when adopting electric conductive polymer, exist and contact resistance is suppressed to lower the practical difficult point that the resistivity of electric conductive polymer self is high.
As the technology that improves semiconducting behavior and durability, this part applicant is willing to propose among the 2002-306861 source electrode and drain electrode are adopted 2 layers of formation that contain different conductive materials respectively the spy, but difficult point is that manufacturing is miscellaneous, and perhaps the carrier degree of excursion of TFT is also not necessarily abundant.
Patent documentation 1: the international brochure that discloses No. 01/47043
Patent documentation 2: the spy opens the 2000-307172 communique
Summary of the invention
The present invention In view of the foregoing, purpose provides a kind of can being connected on the flexible substrates such as polymer support body and forms organic tft, so manufacturing cost significantly reduces and good OTFT and the manufacture method thereof of semiconducting behavior such as durability.
In order to achieve the above object, a scheme of the present invention is, formation contains the layer of thermoplasticity semi-conducting material and the layer of the containing metal particulate that engages on this layer, heat after the extruding or push and heat simultaneously and carry out, be made as the manufacture method of the OTFT of semiconductor layer, source electrode, drain electrode.
Description of drawings
Fig. 1 (a) is the figure of the organic tft configuration example that the present invention relates to of expression.
Fig. 1 (b) is the figure of the organic tft configuration example that the present invention relates to of expression.
Fig. 1 (c) is the figure of the organic tft configuration example that the present invention relates to of expression.
Fig. 1 (d) is the figure of the organic tft configuration example that the present invention relates to of expression.
Fig. 2 is one of the configuration of an expression additional capacitor type organic tft sheet material illustration.
Fig. 3 is one of the configuration of a storage type capacitor type organic tft sheet material illustration.
Fig. 4 is one of the summary equivalent circuit figure of an organic tft sheet material example.
Fig. 5 is the formation concept map of organic tft of the present invention.
Embodiment
Above-mentioned purpose of the present invention reaches by following formation.
(1) form the layer of the layer contain the thermoplasticity semi-conducting material and the containing metal particulate that engages on this layer, heat after the extruding or push and heat simultaneously and carry out, manufacturing is as the manufacture method of the OTFT of semiconductor layer, source electrode, drain electrode.
(2) according to the manufacture method of the OTFT of record in above-mentioned (1), wherein, the temperature more than the softening point of thermoplasticity semi-conducting material heats.
(3) according to the manufacture method of the OTFT of record in above-mentioned (1) or (2), the temperature that takes place more than the hot sticky temperature at metal particle heats.
(4) according to the manufacture method of the OTFT of any one record in above-mentioned (1)～(3), wherein, the average grain diameter of metal particle is below 20nm.
(5) according to the manufacture method of the OTFT of any one record in above-mentioned (1)～(4), wherein, the layer that contains above-mentioned metal particle contains electric conductive polymer.
(6) according to the manufacture method of the OTFT of any one record in above-mentioned (1)～(5), wherein, above-mentioned thermoplasticity semi-conducting material is pi-conjugated class material.
(7) OTFT of making according to the manufacture method of any one record in above-mentioned (1)～(6).
(8) OTFT, wherein, source electrode and drain electrode, the metal phase at least a portion that constitutes this source electrode and drain electrode is sneaked into the semiconductor layer that contains the thermoplasticity semi-conducting material, is bonded on this semiconductor layer.
(9) according to the OTFT of record in above-mentioned (8), wherein, above-mentioned metal is that metal particle carries out hot sticky and formation mutually.
(10) OTFT sheet material, wherein, on the supporter sheet material, form a plurality of OTFT that connect by door bus and source bus, the source electrode and the drain electrode of this thin-film transistor, the at least a portion that constitutes the metal phase of this source electrode and drain electrode is sneaked into the semiconductor layer that contains the thermoplasticity semi-conducting material, is bonded on this semiconductor layer.
(11) according to the OTFT sheet material of record in above-mentioned (10), wherein, above-mentioned metal forms for metal particle is hot sticky.
That is, the inventor makes metal particle hot sticky and sneak in the semiconductor layer by heat and pressure, and along with the reduction of the contact resistance of semiconductor layer and electrode, pole strength increases, and the cementability that TFT constitutes layer and supporter also is improved, and finishes the present invention.
The invention is characterized in, in organic tft is made, form the layer of layer that contains the thermoplasticity semi-conducting material and the containing metal particulate that on this layer, engages, heat after the extruding or push and heat simultaneously and carry out, make semiconductor layer, source electrode, drain electrode.Therefore, shown in the concept map of Fig. 5, the source electrode and the drain electrode of OTFT are sneaked into the form of the organic conductor layer that contains the thermoplasticity semi-conducting material by the metal phase at least a portion that constitutes this electrode, engage and make with this semiconductor layer.
That is, effect of the present invention can think that at least a portion of metal particle is hot sticky mutually, and the metal that forms source electrode, drain electrode has mutually, imbeds the structure of an organic semiconductor layer part that contains the thermoplasticity semi-conducting material.By this structure, as shown in Figure 5, the bonding area of semiconductor layer and source electrode, drain electrode increases, and therefore, the reduction of contact resistance becomes possibility.
The organic semiconducting materials that uses among the present invention adopts the thermoplasticity organic semiconducting materials with softening point or fusing point, for example, can suitably select from known organic semiconducting materials.
As the example of this organic semiconducting materials, can enumerate polypyrrole, polythiophene, poly-sulfinyl ethenylidene, polyacetylene, polyisothianaphthene, poly-furans, polyphenylene etc. and derivative thereof, contain the pi-conjugated base polymers such as copolymer of these unit compositions.
The softening point of organic semiconducting materials or fusing point are 50～300 ℃, more preferably 80～200 ℃, as this material, can enumerate, for example the regular texture body of the F8T2 (copolymer of fluorene derivative and di-thiophene) that puts down in writing in WO 01/47043 grade and poly-(3-alkylthrophene).In addition, the thiophene copolymers of records such as U.S. Patent Publication 2003-0160230, U.S. Patent Publication 2003-016234, U.S. Patent Publication 2003-0136958 also can adopt.These semi-conducting materials at first are to have alkyl to replace structure on pi-conjugated main chain, show that when thermal softening the pi-conjugated base polymer of liquid crystal liquid crystal property is preferred.
Formation method as the layer that contains these thermoplasticity semi-conducting materials, can enumerate vacuum vapour deposition, molecular beam epitaxy flop-in method, ion beam ray method, low energy ion beam method, ion plating, CVD method, sputtering method, Plasma Polymerization, electrolysis polymerization method, chemical polymerization, spraying process, spin-coating method, scraper rubbing method, infusion process, casting method, rolling method, rod and be coated with method, mould rubbing method and LB method etc., can select to use according to material.But, wherein consider from productive viewpoint, adopt semi-conducting material solution can simple and accurate film forming spin-coating method, to be coated with method, mould rubbing method etc. be preferred for scraper rubbing method, infusion process, rolling method, rod.In addition, semi-conducting material solution or dispersion liquid adopt the ink-jet method ejection, also can by dry, removal solvent cambium layer.
The metal material of metal particle, it is preferred can adopting platinum, gold, silver, cobalt, nickel, chromium, copper, iron, tin, antimony, lead, tantalum, indium, palladium, tellurium, rhenium, iridium, aluminium, ruthenium, germanium, molybdenum, tungsten, zinc etc., particularly work function 4.5eV above platinum, gold, silver, copper, cobalt, chromium, iridium, nickel, palladium, molybdenum, tungsten.
Particulate by these metals constitute preferably adopts the dispersion stabilizer that is made of organic material, and the solution, cream or the printing ink that are dispersed in the dispersant of water or organic solvent or its mixture apply the back composition.
The manufacture method of disperseing thing as this metal particle, can enumerate evaporation in the gas, sputtering method, physics method of formation such as metal vapors synthetic method, or colloid method, coprecipitations etc. are at the liquid-phase reduction metal ion, generate the chemical method of formation of metal particle, preferably, Te Kaiping 11-76800 number, Te Kaiping 11-80647 number, Te Kaiping 11-319538 number, the spy opens disclosed colloid methods such as 2000-239853, and the spy opens 2001-254185, the spy opens 2001-53028, the spy opens 2001-35255, the spy opens 2000-124157, the spy opens the metal particle that evaporation is made in the gas of record such as 2000-123634 and disperses thing.
As the average grain diameter of the metal particle that disperses, consider from effect of the present invention, below the preferred 20nm.
In addition, it is preferred that metal particle disperses to contain in the thing electric conductive polymer, it is carried out composition after, by extruding, heating, form the source electrode, drain electrode gets final product, can carry out resistive with organic semiconductor layer by electric conductive polymer and contact.That is, insert electric conductive polymer, make with semi-conductive contact resistance and reduce, and make metal particle hot sticky, thus, improve effect of the present invention more on the metal particle surface.
As electric conductive polymer, employing is preferred by the known electric conductive polymer of raising conductances such as doping method, for example, can adopt the complex etc. of conductive polyaniline, conductive poly pyrroles, conductive poly thiophene, poly-ethylidene dioxy thiophene and polystyrolsulfon acid.
The content of metal particle is 0.00001～0.1st with respect to the mass ratio of electric conductive polymer, and is preferred.When surpassing this amount, the hot sticky of metal particle is obstructed.
Adopt these metal particles to disperse thing, by following method, with after the layer that contains the thermoplasticity semi-conducting material engages cambium layer, dry solvent.After the layer that contains the thermoplasticity semi-conducting material engages, can adopt 1) by heating and extruding (heating and pressurizing), form the structure of imbedding, make metal particle hot sticky simultaneously, form source electrode, drain electrode; 2) by heating and extruding, after the structure that formation is imbedded, more than the hot sticky temperature of metal particle, make metal particle hot sticky again, form source electrode, drain electrode; 3) by extruding, form the structure imbed after, more than the hot sticky temperature of metal particle, make metal particle hot sticky again, the arbitrary order that forms source electrode, drain electrode all can adopt, preferably 1) or 2), most preferably 1).In addition, which kind of no matter adopts carry out in proper order, the softening point of thermoplasticity organic semiconducting materials or fusing point, at least a portion of metal particle is restricted by hot sticky temperature or time, for example, 1) and 2) occasion, the temperature during extruding is preferred more than the softening point of thermoplasticity semi-conducting material.
In addition, above-mentioned squeezing pressure scope, the hardness when also depending on the semiconductor layer thermoplastic is approximately 1～50000Pa, more preferably 1000～10000Pa.
In the present invention, thermoplasticity semi-conducting material and metal particle are by heating simultaneously and pressurizeing, and the physical property that can strengthen both engages, and reduces contact resistance more, the electric current in the time of can strengthening transistor switch.In addition, the formation of the layer of containing metal particulate is not particularly limited with the order that contains the formation of thermoplasticity semiconductor material layer.
Adopt above-mentioned metal particle to disperse thing, constitute the such method of patterning of similar electrode, and form the layer contain the thermoplasticity semi-conducting material and containing metal particulate layer after, as the method for heating and pressurizing, can adopt the whole bag of tricks, provide concrete example among the embodiment afterwards.
For example, as the composition of metal particle dispersion thing, at first enumerate print process.Disperse thing to carry out composition with metal particle,, can adopt print process arbitrarily such as letterpress, silk screen printing, lithographic printing, intaglio printing, porous printing, carry out the composition that metal particle disperses thing as print process as printing ink.In addition, also useful ink-jet method is carried out the method for composition.Promptly, metal particle disperses thing to spray from ink gun, carry out the method that metal particle disperses the thing composition, as ejection mode from ink gun, can adopt type as required such as piezoelectricity mode, バ Block Le ジ エ Star ト (registered trade mark) mode, and the known method such as ink-jet method of continuous injection type such as electrostatic attraction mode are carried out composition.
As the heating and pressurizing method, can adopt methods such as zone of heating pressing plate is the known method of representative.
The structure example of the organic tft that the present invention relates to shown in Fig. 1 (a)～(d).
Fig. 1 (a), on the supporter 6 that forms known gas barrier film, form the layer pattern (2,3) of containing metal particulate with said method after, form the layer 1 contain the thermoplasticity semi-conducting material thereon, then, the layer of heating and pressurizing containing metal particulate and contain the layer of thermoplasticity semi-conducting material, form semiconductor layer 1, source electrode 2, drain electrode 3, form insulating barrier 5 thereon, form gate electrode 4 more thereon, constitute organic tft.
Fig. 1 (b) on supporter 6, forms the layer 1 that contains the thermoplasticity semi-conducting material, and then, the layer composition the containing metal particulate carries out heating and pressurizing, forms semiconductor layer 1, source electrode 2, drain electrode 3, forms insulating barrier 5, gate electrode 4 thereon.
Fig. 1 (c), on supporter 6, form gate electrode 4 backs and form insulating barrier 5, after by said method the layer of containing metal particulate being formed pattern (2,3), form the layer 1 contain the thermoplasticity semi-conducting material thereon, then, the layer of heating and pressurizing containing metal particulate and contain the layer of thermoplasticity semi-conducting material, form semiconductor layer 1, source electrode 2, drain electrode 3, form organic tft.
Fig. 1 (d) forms gate electrode 4 backs and forms insulating barriers 5 on supporter 6, contain the layer 1 of thermoplasticity semi-conducting material by being coated with comprehensive formation thereon, and the layer composition of containing metal particulate, heating and pressurizing forms semiconductor layer 1, source electrode 2, drain electrode 3 thereon.
Fig. 2 is one of the configuration of an organic tft sheet material example, as organic tft, it is the additional capacitors type, on supporter 6, at first has gate electrode 4, by door insulating barrier 5, source electrode 2 and drain electrode 3 with the passage binding that constitutes by semiconductor layer 1, on the sheet supporter, these connect by door bus 7 and source bus 8.The 9th, pixel electrode, the 20th, building-out condenser.Fig. 3 is the example of configuration store formula capacitor type organic tft sheet material, the 21st, and the memory-type capacitor.
Fig. 4 is one of the summary equivalent circuit figure of an organic tft sheet material example.
Organic tft sheet material 10 has a plurality of organic tfts 11 of matrix configuration.The 7th, the door bus of each organic tft 11, the 8th, the source bus of each organic tft 11.Connect output element 12 on the electrode of the source of each organic tft 11, this output element 12 for example is liquid crystal, electrophoresis element etc., constitutes the pixel in the display unit.Pixel electrode also can be as the input electrode of optical sensor.In illustrated embodiment,, represent with the equivalent circuit that resistance and capacitor constitute as the liquid crystal of output element.The 13rd, reservoir capacitor, the 14th, vertical drive circuit, the 15th, horizontal drive circuit.
In the present invention, organic semiconductor layer contains, and for example has the material of functional groups such as acrylic acid, acetamide, dimethylamino, cyano group, carboxyl, nitro; Quinone derivatives, TCNE and four cyano quinone bismethane and derivative thereof etc. are accepted the material of the acceptor formation of electronics; And, for example have the material that the donor of power supply such as benzanthracene, perylene, replacement De perylene, carbazole and derivative thereof, four thiophene fluorenes and derivative thereof of amine that the material, phenylenediamine etc. of functional groups such as amino, triphenyl, alkyl, hydroxyl, alkoxyl, phenyl replace, anthracene, benzanthracene, replacement constitutes, it is also passable to implement so-called doping treatment.
The so-called doping means and imports this film receiving the electronics molecule (acceptor) or the sub-property molecule (donor) of powering as dopant.Therefore, implementing the film of overdoping, is the film that contains above-mentioned fused-ring aromatic compound and dopant.As the dopant that uses among the present invention, any of acceptor, donor all can use, and can adopt material known and method.
Thickness as semiconductor layer is not particularly limited, but the thickness that resulting TFT characteristic majority is subjected to semiconductor layer greatly about, its thickness is different because of semi-conducting material, generally below 1 μ m, 10～300nm is particularly preferred.
As gate electrode,, can adopt material arbitrarily so long as conductive material gets final product and is not particularly limited.As the formation method of gate electrode,, adopt the method for known photoetching process or emission (リ Off ト オ Off) method formation adopting methods such as evaporation or sputter to form conductive membrane; Etchant with hot transfer printing, ink-jet etc. on metal formings such as aluminium or copper carries out etching method.In addition, both can be undertaken composition to the solution of electric conductive polymer or dispersion liquid, electrically conductive microparticle dispersion liquid by direct ink-jet, also can formation such as wipe by litho or laser from coated film.In addition, the printing ink that contains electric conductive polymer or electrically conductive microparticle, conductive paste etc., it is also passable to carry out composition with printing processes such as relief printing plate, intaglio plate, lithographic plate, silk screen printings.
As the door insulating barrier, can adopt various insulating material, but the inorganic oxide overlay film higher than dielectric constant is particularly preferred.As inorganic oxide, can adopt silica, aluminium oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium, zirconic acid barium titanate, lead zirconate titanate, load lanthanium titanate, strontium titanates, barium titanate, barium fluoride magnesium, bismuth titanates, strontium bismuth titanate, strontium bismuth tantalate, tantalic acid niobium bismuth, iridium black etc.Wherein, preferably silica, aluminium oxide, tantalum oxide, titanium oxide.It also is preferred adopting inorganic nitrides such as silicon nitride, aluminium nitride.
As the formation method of inorganic oxide overlay film, can enumerate dry method such as vacuum vapour deposition, molecular beam epitaxy flop-in method, ion beam ray method, low energy ion beam method, ion plating, CVD method, sputtering method, atmospheric pressure plasma method; And spraying process, spin-coating method, scraper rubbing method, infusion process, casting method, rolling method, rod are coated with coating processes such as method, mould rubbing method; Wet methods such as composition method such as printing or ink-jet can be selected to use according to material.Wet method is dispersed in inorganic oxide particle arbitrarily in organic solvent or the water, adopts surfactant etc. to disperse the liquid of auxiliary agent as required, is coated with, dry method; And for example the alkoxide liquid solution is coated with, the so-called sol-gal process of drying oxide precursor.In these methods, atmospheric pressure plasma method preferably.
So-called plasma system film is under atmospheric pressure handled, be meant under near the pressure atmospheric pressure or the atmospheric pressure and discharge, make reactant gas carry out excitation of plasma, film forming processing on base material, about this method, the spy opens flat 11-133205 number, spy and opens 2000-185362, spy and open that 2000-147209 is opened in flat 11-61406 number, spy, the spy opens 2000-121804 etc. and done record (the following atmospheric pressure plasma method that also claims).Adopt the high functionality film of this method, can form on the productivity highland.
As the organic compound overlay film, can adopt the light-cured resin of polyimides, polyamide, polyester, polyacrylate, optical free radical polymerization system, light cationic polymerization system, or contain copolymer, polyvinyl phenol, polyvinyl alcohol, the linear phenol-aldehyde resin of acrylonitrile composition and contain cyanoethyl fluorine hydroxyl dragon, polymer, contain elastomeric phosphazene compound etc.
As the formation method of organic compound overlay film, above-mentioned wet method is preferred.But inorganic oxide overlay film and organic oxygen compound overlay film lamination are also used.In addition, as the thickness of door insulating barrier, general 50nm～3 μ m, preferred 100nm～1 μ m.
Supporter is made of glass or flexible resin(a) film-making material, and for example, available plastic film is as sheet material.As above-mentioned plastic film, for example, can enumerate the film etc. that PETG (PET), PEN (PEN), polyether sulfone (PES), Polyetherimide, polyether-ether-ketone, polyhenylene thioether, poly-aromatics, polyimides, Merlon (PC), cellulose triacetate (TAC), cellulose-acetate propionate ester (CAP) wait formations.Therefore, adopt plastic film to compare with adopting glass substrate, light weight, when transportation property was good, resistance to impact also improved.
Embodiment
Specifically describe the present invention below by embodiment, but the present invention is not limited by these embodiment.
After forming the heat oxide film of thick 200nm on than the n type Si wafer of resistance 0.01 Ω cm, be immersed in the NaOH aqueous solution of 1 mole/L, fully wash with ultra-pure water.Dipping was used toluene wash after 10 minutes in the toluene solution (1 quality %) of octadecyl trichlorosilane, made drying, carried out the surface treatment of heat oxide film.
Then, fully refining with the chelating washing method of EDTA (EDTA sodium), the chloroformic solution of the regional rule body (regioregular) (manufacturing of ア Le De リ Star チ company) of preparation poly-(the basic thiophene of 3-) is used N
2The gas bubbling is removed the dissolved oxygen in the solution, at N
2Atmosphere is enclosed in the gas above-mentioned silica tunicle surface is coated with liquid feeder, after drying at room temperature, implements heat treatment 30 minutes at 50 ℃.At this moment, the thickness of poly-(the basic thiophene of 3-) is 50nm.
Adopt the special method for making of putting down in writing among the flat 11-80647 of opening, behind the aqueous dispersions of the silver-colored particulate of preparation average grain diameter 30nm, add aqueous dispersions (the バ イ エ Le company manufacturing of PSS (polystyrolsulfon acid) complex of electric conductive polymer PED0T (polyethylene dioxythiophene), BAYTR0NP) with the nonionic surface active agent (polyoxyethylene alkyl ether) of 0.01 quality %, the layer of making the containing metal particulate forms material.Here, the mass ratio of silver-colored particulate and electric conductive polymer transferred to 5000: 1.
In addition, the layer that contains above-mentioned metal particle is formed the material ejection, make to be dried to source electrode, drain electrode shape by piezoelectric ink jet.
Then, in nitrogen atmosphere gas, Si single-chip substrate is heated to 250 ℃ on one side, on one side surface temperature is reached 250 ℃ the silicone rubber roller 5000Pa that exerts pressure, the result of contact source, drain electrode part is, it is hot sticky that electrode part divide to take place, and nuzzle in the semiconductor layer in the composition surface of semiconductor layer side.
Thus, make the organic tft of the long L=30 μ of passage m, channel width W=1mm.This TFT is as the passage enhancement mode FET of p passage, and work is good, and the degree of excursion of zone of saturation is 0.015cm
2/ Vs.
The aqueous dispersions replacement of silver-colored particulate with the silver-colored particulate of average grain diameter 20nm of the average grain diameter 30nm that uses in the layer formation material of containing metal particulate, organic tft is made in operation similarly to Example 1.
The aqueous dispersions of the silver-colored particulate of use average grain diameter 10nm replaced in the layer formation material of containing metal particulate, organic tft was made in operation similarly to Example 1.
Comparative example 1
Do not add electric conductive polymer except the layer at the containing metal particulate forms in the material, outside not pushing during heating, organic tft is made in operation similarly to Example 3.
Do not add the electric conductive polymer except the layer at the containing metal particulate forms in the material, organic tft is made in operation similarly to Example 3.
Except the layer at the containing metal particulate forms the aqueous dispersions of the golden particulate that uses average grain diameter 10nm in the material, organic tft is made in operation similarly to Example 1.
Use the special polythiophene class of putting down in writing among the embodiment of 2003-268083 of opening in semiconductor layer, organic tft is made in operation similarly to Example 3.But heating-up temperature is 180 ℃.
Comparative example 2
Except the layer at the containing metal particulate form do not push when not adding electric conductive polymer, heating in the material, organic tft is made in operation similarly to Example 6.
Do not add the electric conductive polymer except the layer at the containing metal particulate forms in the material, organic tft is made in operation similarly to Example 6.
In the zone of saturation of each organic tft of above making, show carrier degree of excursion (cm
2/ Vs).
Comparative example 1 0.0018
Comparative example 2 0.0022
Therefore, according to manufacture method of the present invention, can obtain the good organic tft of semiconducting behavior.In addition, when metal particle mixes with electric conductive polymer when existing, can obtain better effect, the average grain diameter of metal particle is preferred below 20nm.
Utilize possibility on the industry
According to the manufacture method of OTFT of the present invention, can connect at flexible matrix Connect the good OTFTs of semiconducting behavior such as forming durability and carrier degree of excursion. In addition , mix existence with electric conductive polymer by metal particle outward, can more reduce contact resistance, As semi-conducting material, by using the pi-conjugated class material that has liquid crystal liquid crystal property when the thermoplastic, make These effects reach bigger.
Claims (10)
1. the manufacture method of OTFT is characterized in that, forms the layer of layer that contains the thermoplasticity semi-conducting material and the containing metal particulate that engages on this layer, and heating of extruding back or extruding and heating are carried out simultaneously, make semiconductor layer, source electrode, drain electrode.
2. according to the manufacture method of the OTFT of record in the claim 1, it is characterized in that the temperature more than the softening point of thermoplasticity semi-conducting material heats.
3. according to the manufacture method of the OTFT of record in the claim 1, it is characterized in that metal particle heats in the temperature that takes place more than the hot sticky temperature.
4. according to the manufacture method of the OTFT of record in the claim 1, it is characterized in that the average grain diameter of metal particle is below 20nm.
5. according to the manufacture method of the OTFT of record in the claim 1, it is characterized in that the layer that contains above-mentioned metal particle contains electric conductive polymer.
6. according to the manufacture method of the OTFT of record in the claim 1, it is characterized in that above-mentioned thermoplasticity semi-conducting material is pi-conjugated class material.
7. OTFT is characterized in that, source electrode and drain electrode, and the metal phase at least a portion that constitutes this source electrode and drain electrode is sneaked into the semiconductor layer that contains the thermoplasticity semi-conducting material, is bonded on this semiconductor layer.
8. according to the OTFT of record in the claim 7, it is characterized in that above-mentioned metal is that metal particle carries out hot sticky and formation mutually.
9. OTFT sheet material, it is characterized in that, on the supporter sheet material, form a plurality of OTFT that connect by door bus and source bus, the source electrode and the drain electrode of this OTFT, the metal phase at least a portion that constitutes this source electrode and drain electrode is sneaked into the semiconductor layer that contains the thermoplasticity semi-conducting material, is bonded on this semiconductor layer.
10. according to the OTFT sheet material of record in the claim 9, it is characterized in that above-mentioned metal carries out hot sticky formation for metal particle.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003429052 | 2003-12-25 | ||
| JP429052/2003 | 2003-12-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1898817A CN1898817A (en) | 2007-01-17 |
| CN100495757C true CN100495757C (en) | 2009-06-03 |
Family
ID=34736291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800382208A Expired - Fee Related CN100495757C (en) | 2003-12-25 | 2004-12-14 | Method for manufacturing organic thin film transistor, and organic thin film transistor and sheet thereof manufactured by such method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4830489B2 (en) |
| CN (1) | CN100495757C (en) |
| WO (1) | WO2005064703A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102153043B1 (en) | 2014-01-07 | 2020-09-07 | 삼성전자주식회사 | Organometallic compound and organic light emitting device including the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409417A (en) * | 2002-09-23 | 2003-04-09 | 中国科学院长春应用化学研究所 | Organic film transistor and preparing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3270900B2 (en) * | 1992-01-30 | 2002-04-02 | 富士通株式会社 | Connection structure of conductive polymer wiring and connection method |
| JP2002204012A (en) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | Organic transistor and its manufacturing method |
| JP2003309268A (en) * | 2002-02-15 | 2003-10-31 | Konica Minolta Holdings Inc | Organic transistor element and manufacturing method therefor |
-
2004
- 2004-12-14 WO PCT/JP2004/018622 patent/WO2005064703A1/en active Application Filing
- 2004-12-14 JP JP2005516561A patent/JP4830489B2/en not_active Expired - Fee Related
- 2004-12-14 CN CNB2004800382208A patent/CN100495757C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409417A (en) * | 2002-09-23 | 2003-04-09 | 中国科学院长春应用化学研究所 | Organic film transistor and preparing method |
Non-Patent Citations (2)
| Title |
|---|
| Contact resistance in organic transistors that use source anddrain electrodes formed by soft contact lamination. ZAUMSEIL J. et al.J.Appl.Phys.,Vol.93 No.10. 2003 |
| Contact resistance in organic transistors that use source anddrain electrodes formed by soft contact lamination. ZAUMSEIL J. et al.J.Appl.Phys.,Vol.93 No.10. 2003 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2005064703A1 (en) | 2007-12-20 |
| JP4830489B2 (en) | 2011-12-07 |
| CN1898817A (en) | 2007-01-17 |
| WO2005064703A1 (en) | 2005-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7332369B2 (en) | Organic electronic devices | |
| CN100440566C (en) | Organic field effect transistor | |
| JP5124520B2 (en) | Thin film transistor | |
| US20080230778A1 (en) | Method for manufacturing an organic semiconductor device, as well as organic semiconductor device, electronic device, and electronic apparatus | |
| JP2008010541A (en) | Organic semiconductor material, organic semiconductor film, organic thin film transistor and manufacturing method thereof | |
| CN101635333B (en) | Semiconductor composite film, method for forming semiconductor composite film, thin film transistor, method for manufacturing thin film transistor, and electronic apparatus | |
| CN102017209A (en) | Organic thin film transistors | |
| CN102280584A (en) | Method for manufacturing an organic semiconductor element | |
| KR20060076237A (en) | Electronic devices and processes for forming electronic devices | |
| JP2013016611A (en) | Semiconductor device, manufacturing method of the same and manufacturing method of image display device | |
| KR20090040199A (en) | Multilayer bipolar field-effect transistor and preparation method thereof | |
| EP2117059B1 (en) | Organic Thin Film Transistors | |
| Barret et al. | Inkjet-printed polymer thin-film transistors: Enhancing performances by contact resistances engineering | |
| KR101616190B1 (en) | Manufacturing method of transitor using selective print of dopant | |
| KR20100021977A (en) | Semiconducting polymers | |
| CN100495757C (en) | Method for manufacturing organic thin film transistor, and organic thin film transistor and sheet thereof manufactured by such method | |
| JP4419425B2 (en) | Organic thin film transistor element | |
| US7754525B2 (en) | Film formation method and manufacturing equipment for forming semiconductor layer | |
| JP2005183889A (en) | Thin film transistor (tft) sheet and its manufacturing method, and thin film transistor element formed by it | |
| KR20100021978A (en) | Electronic device comprising semiconducting polymers | |
| US8052895B2 (en) | Semiconducting ink formulation | |
| JP2006028055A (en) | Organic semiconductor material, organic transistor, field-effect transistor and switching element | |
| US7790498B2 (en) | Process using a broken gelled composition | |
| JP5223294B2 (en) | Method for producing organic thin film transistor | |
| JP5949815B2 (en) | Organic thin film transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090603 Termination date: 20111214 |