CN100495447C - Visible near-infrared receiving and emitting electronic integrated device for discriminating financial ticket - Google Patents
Visible near-infrared receiving and emitting electronic integrated device for discriminating financial ticket Download PDFInfo
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- CN100495447C CN100495447C CNB2007100575189A CN200710057518A CN100495447C CN 100495447 C CN100495447 C CN 100495447C CN B2007100575189 A CNB2007100575189 A CN B2007100575189A CN 200710057518 A CN200710057518 A CN 200710057518A CN 100495447 C CN100495447 C CN 100495447C
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Abstract
A visible near-infrared luminous electronic integrated component used on true-false identification of financial ticket is prepared as using identification and detection theory of optical frequency up-conversion or down-conversion signal as base to integrate spectrum emission chip, optical signal receiving chip, filtering component and follow up circuit used in detection together then currying out design based on emission wavelength of said emission chip and wavelength response peak value of said receiving chip for raising stability and accuracy of identification component.
Description
[technical field] the invention belongs to the applied technical field that ticket anti-pseudo detects, and particularly optical frequency transforms the application of false-proof detection method.The present invention is specifically related to light transmitting chip, light-receiving chip and chip integrated in the security devices.
[background technology] optical frequency replacement theory is to adopt the spectral emissions device to excite the surface of measured object (optical frequency transition material) to produce the optical signalling of another specific wavelength with certain wavelengths.Because the excitation source wavelength all is invisible for human eye, so have good crypticity, uniqueness, but also have characteristics such as long service life, material preparation technology difficulty height, thus be widely used in false proof field, as be attached on financial instrument or the effective ticket as anti-fake mark; Or make an addition in the plastic sheeting, thereby can combine with existing laser holographic anti counterfeiting label easily, play the effect of integrated anti-counterfeit.
So detection method is for realizing that this antiforge function plays a part very important effectively, accurately and rapidly to develop a cover at it.Testing process is: the laser of being launched specific wavelength by semiconductor laser, excite the testing sample surface to produce the optical signalling of another specific wavelength, this signal is received by photoelectric receiving device through the optically filtering device, carries out data processing and identification by special signal processing circuit at last.
Spectral emissions device centre wavelength in the existing detection system, go out luminous power and rise with temperature the problem that red shift and intensity reduce can take place respectively, influence the optical frequency conversion efficiency to a great extent, be unfavorable for receiving and signal Processing; The response time of existing photoelectric receiving device and peak in the spectral response can not satisfy the wavelength requirement after the optical frequency conversion well, usually adopt the optical filter spare of narrow-band filtering to carry out the peak value migration, must lose light signal but do like this, be unfavorable for the weak signal detection.And measuring method adopts piece-rate system usually, is unfavorable for the commercialization of this detection method; The loss of piece-rate system luminous energy is bigger, a little less than the anti-external interference ability, and is unfavorable for temperature compensation.
[summary of the invention] the objective of the invention is to solve the prior art above shortcomings, and a kind of visible near-infrared receiving luminous electron integrated device that is used for the financial note real and fake discrimination is provided.So that realize the optimal combination and the coupling of spectral emissions chip, photoelectricity receiving chip and light filter plate, constitute the micro mation system module, improve antijamming capability; Also can be integrated in the relevant detection device as the core detection part easily.
The visible near-infrared receiving luminous electron integrated device that is used for the financial note real and fake discrimination provided by the invention comprises:
Be used to launch the anti-fake material that excites on the ticket, the light transmitting chip of realizing the laser that optical frequency transforms;
Be used to control the control circuit of light transmitting chip emitted laser;
The laser that the light transmitting chip is sent can reflex to and detect aperture position and be radiated at catoptron on the measured object;
Be used for that signal specific light wave that measured object is inspired focuses on and the parasitic light of filtering primary frequency, the optical devices of a stick signal light;
Be used to receive the light-receiving chip that above-mentioned optical devices focus on filtered flashlight and convert electric signal to;
The signal of drive signal pilot lamp amplifies decision circuit to be used for amplifying the light-receiving chip electrical signal converted also;
And the signal lamp that is used to adjudicate the measured object true and false.
The formation of described smooth transmitting chip comprises: be used to launch laser optical active component, be used for that optical waveguide that the collimation of laser beam focuses on and waveguide lens, semiconductor are suprabasil to be used to install the adjustment plane of optical active component and heat sink tableland.Described optical active component is the ridge waveguide semiconductor laser that is used to launch 980 graded index single quantum nano wave length laser, that have compressive stress.Optical waveguide and waveguide lens are for being installed on the silicon tableland and the type of the burying SiO 2 waveguide and the lens that are connected with optical active component optics by kowtowing the core wire chip technology.
Described light-receiving chip is the gallium arsenide phosphide mix-crystal photodiode that is grown in the GaAs based end, and heat sink on the semiconductor-based end.
Describedly be used for that signal specific light wave that measured object is inspired focuses on and the optical devices of filtering are filter plate, adopt and plate zinc sulphide-magnesium fluoride on the QB21 optical glass and increase anti-film system, and make plano-convex lens.
The control circuit of above-mentioned light transmitting chip is to make the light transmitting chip be operated in the pulsing circuit of pulsed mode, comprises pulse signal generation circuit and the pulse signal amplification circuit that is attached thereto is formed.
Signal amplifies decision circuit and comprises the photocurrent amplifying circuit, and the reset circuit that the light emitting diode through playing the signal decision effect is attached thereto is formed.
Light transmitting chip in the above-mentioned integrated opto-electronics device, control circuit, catoptron, optical devices, light-receiving chip and signal amplify decision circuit and are integrated at same the semiconductor-based end.
Whole integrated opto-electronics device can encapsulate use separately, also can be used as the core detection part and is integrated in the relevant detection device.
Advantage of the present invention and good effect:
The present invention adopts the spectral emissions and the receiving chip of special optimal design, can guarantee emission optical chip tepor liter, and wavelength does not drift about, and matches through optical wavelength and receiving chip sensitive wave length after the optical frequency conversion; Integrated design can also significantly reduce the luminous energy loss, thereby reduces device heating.
Dedicated spectral transmitting chip provided by the invention, ridge waveguide semiconductor laser for graded index single quantum with compressive stress, its design and making are through optimizing, obtain less threshold current, and can obtain less far-field divergence angle, especially the vertical far-field angle of divergence, guaranteeing has device that good temperature characterisitic is arranged.
Dedicated optical receiving chip provided by the invention, the light that transmits of its spectral response and measured object is consistent, and the optical filter spare that has solved original employing narrow-band filtering carries out the problem that the peak value migration is consequently lost light signal.
According to integrated design of the present invention, adopt the anti-counterfeiting information on the reflectometry detection ticket.By being integrated in same suprabasil signal processing circuit, trigger the true and false of pilot lamp judgement measured object.
[description of drawings]
Fig. 1 is the cross-sectional view of integrated opto-electronics device.
Fig. 2 a is the stereographic map of the installation schematic diagram of light transmitting chip, and Fig. 2 b is the front view of the installation schematic diagram of light transmitting chip.
Fig. 3 is the fabrication and installation figure of light transmitting chip.
Fig. 4 is the model two-dimensional cross sectional structural drawing as the ridge waveguide semiconductor laser of optical active component.
Fig. 5 is the structural drawing of light-receiving chip.
Fig. 6 is the control circuit schematic diagram of light transmitting chip.
Fig. 7 is the amplification decision circuit schematic diagram of light-receiving chip.
Wherein: 1. smooth transmitting chip, 2. silicon tableland, 3. silicon (semiconductor) substrate, 4. refractive prism or catoptron, 5. light-receiving chip, 6. signal lamp, 7. filter plate (optical devices, plano-convex lens), 8. measured object, 9. photoelectricity active device, 10.Si JiPLCQu, 11. electronic circuit district, 12. assembling district, 13. electrode, 14. scolder, 15.SiO2 waveguide, 16. waveguide core layer, 17. waveguide lens, 18.CCD microscope, 19. alignment mark, 20.AuSn scolder pad, 21. infrared light.
[embodiment]
Embodiment 1: integrated opto-electronics device
As shown in Figure 1, integrated opto-electronics device provided by the invention adopts the one encapsulating structure, comprise that the light transmitting chip 1, refractive prism 4, the filter plate (optical devices) 7 that are integrated in same semiconductor (as the silicon) substrate 3 are plano-convex lens, light-receiving chip 5 and signal lamp 6, and be used for controlling the control circuit (figure does not draw) of light transmitting chip emitted laser and be used for the light-receiving chip electrical signal converted is amplified and the signal of drive signal pilot lamp amplifies decision circuit (figure does not draw).
Detection method:
As shown in Figure 1, this device has aperture at top end, and the 980nm laser that makes the light transmitting chip send can reflex to aperture position by refractive prism 4, and is radiated on the measured object 8, and measured object is close to the device outside surface, is beneficial to detection.When laser radiation to measured object, if measured object is true, because the optical frequency transition effects, can inspire the signal light-wave of specific visible wavelength.The parasitic light that has changed the signal light-wave of frequency and primary frequency all can the reflected back detector direction.Reflected light is focused on and filtering the light of filtering primary frequency, a stick signal light by the plano-convex lens among Fig. 17.Flashlight falls into light-receiving chip 5 and is converted into electric signal, after amplifying, and drive signal pilot lamp 6, the bright demonstration measured object of lamp is true.In addition, reset button is arranged on the pilot lamp, press, pilot lamp extinguishes, and can detect again.
Consider when detecting, might not exclusively be adjacent between measured object and the device that extraneous natural light also might enter in the device and be detected, thereby can influence testing result.Therefore, the working method of light transmitting chip is set to pulsed mode, and its driving circuit comprises pulse signal generation part as shown in Figure 6, form with the pulse signal amplifier section that is attached thereto (electric capacity is controlled the current switching by LD among the figure, thus the switch of control LD).Thereby the flashlight that measured object excites also is pulsed light.If natural light mixes mutually with flashlight, convert photocurrent to after entering photo-detector, the natural light correspondence be DC current, the flashlight correspondence be alternating current.Signal processing circuit as shown in Figure 7 (signal amplification decision circuit) comprises the photocurrent amplifying circuit, and the reset circuit that the light emitting diode through playing the pilot lamp effect is attached thereto is formed, this circuit design every the circuit of straight-through friendship.Like this, finally got rid of the interference that extraneous natural light may cause.
In addition,, reduce the work heating power as far as possible, also should adopt driving circuit as shown in Figure 6, device is operated under the pulse mode for requirement to the device temperature characteristic.
Embodiment 2: the making of light emission, receiving chip
The suprabasil right side of semiconductor Si as shown in Figure 2 is one and comprises and bury type SiO2 based waveguides that its outer end has made waveguide lens, and the collimation that is used for laser beam focuses on.In the suprabasil electronic circuit of Si shown in Figure 2 district, made the thick film circuit on the Si according to Fig. 6 and circuit diagram shown in Figure 7.
Make a tableland 2 in the centre of Si substrate, it plays adjustment plane and the heat sink effect that the optical active component chip is installed.With optical active component, promptly ridge waveguide semiconductor laser is installed on the Si tableland and carries out optics with the SiO2 waveguide and be connected by kowtowing the core wire chip technology.
About the design and the making of optical active component, its model two-dimensional cross sectional structural drawing as shown in Figure 4.According to the selection and the optimization of quantum well structure, growth material and device parameters, this active device is a ridge waveguide device for adopting the semiconductor laser of the graded index single quantum with compressive stress.The material growth is followed successively by n type GaAs cushion by order from top to bottom, and thickness is 0.3 μ m, and doping content is 1 * 10
18Cm
-3N type Ga
0.51In
0.49P clad, thickness are 1.5 μ m, and doping content is 1 * 10
18Cm
-3Active layer does not mix, and comprises light limiting layer and quantum well and potential barrier up and down.Quantum well adopts has 1.33% compressive stress, and thickness is 7nm.Light limiting layer adopts the GRIN-SCH structure; Be to be p type Ga above the active layer then
0.51In
0.49P clad, thickness are 1.5 μ m, and doping content is 1 * 10
18Cm
-3Be the GaAs contact layer of p type at last, thickness is 0.1 μ m, and doping content is 3 * 10
18Cm
-3, and form Ohmic contact with metal electrode.Whole component structure must be etched into ridge-like structure to the both sides, the left and right sides of element with engraving method in order to form ridge waveguide structure, the Ga of etch depth from the GaAs contact layer of p type to the p type
0.51In
0.49P clad 1.3 μ m places.In addition, element ridge waveguide width is 3 μ m, and the both sides is 3.5 μ m, the long 800 μ m of resonator cavity, and the front and back specular reflectance is 32%.The threshold current 5.56mA of laser instrument, the vertical far-field angle of divergence is that full width at half maximum (FWHM) is 31.9 °.
Fig. 3 is the details that optical active component is installed on the Si tableland.Harmonize for precision, need to make alignment mark.Alignment mark and Au electrode and AuSn scolder accurately are deposited on the Si tableland that the SiO2 passivation layer covers.The precision of waveguide alignment mark can reach ± 1 μ m, and the manufacturing accuracy of alignment mark value is ± 0.5 μ m on the sheet of optical device.As shown in Figure 3, the adjusting of these alignment mark is to harmonize by the infrared light that observation penetrates substrate and optical device chip.Vertical direction is harmonized and can be finished by regulating the height that the optical device chip is placed on solder surface, and regulation vertical direction adjustment precision is ± 0.5 μ m.
By same mode, light-receiving chip shown in Figure 5 accurately can be fixed on the relevant position in Si tableland by the mode of kowtowing weldering.
Light-receiving chip is the gallium arsenide phosphide mix-crystal photodiode that is grown in the GaAs based end, and its structural drawing as shown in Figure 5.The photodiode junction depth is controlled at about 0.1 μ m, and photosurface is about 4 square millimeters.N-GaAs substrate is selected in the making of chip for use, vapour phase epitaxy n-GaAsP on it, and the control phosphorus component is about 0.4, the shallow pn knot that diffuses into 0.1 μ m of Zn is adopted on the surface.Positive evaporation Al film makes the Al electrode by lithography.The back side forms backplate with AuGeNi.Key is to make shallow pn knot, and junction depth is controlled 0.1 μ m.P district doping content Na=1 * 10
16Cm
-3, the N district adopts Te to mix, and concentration is 2 * 10
17Cm
-3
The peak value of response of light-receiving chip is near 600nm, and is consistent with the flashlight wave band that need are surveyed.After the light signal that receives is converted to photocurrent, amplify about 400 times through as shown in Figure 7 amplifying circuit, it is bright to drive pilot lamp then.
Embodiment 3: the making of filter lens
As shown in Figure 1, there is a plano-convex lens light-receiving chip top.Its material is a QB21 optical glass, is blue tinted glass, the light wave transmitance of 560nm is had more than 80%, to light wave transmitance＜4.5% more than the 680nm.Simultaneously plate on the plane of lens and to increase anti-film, adopt the 1/4 wave film system of ZnS-MgF, when the number of plies reaches 15 layers, can reach 99.6% to the reflectivity of 980nm, cooperate QB21 optical glass, its transmissivity can be decreased to 0.018%.Half-wave bandwidth FWHM (nm): 10～20, wavelength migration＜0.1nm/ ℃.The clear aperature of design lens is 90%, and diameter is 12.7mm.The focal length of lens is 5+0.05mm.
Plano-concave lens is fixed on light-receiving chip top by device, with the parasitic light filtering of primary frequency, and the signal light-wave of frequency that seen through the change injected, stick signal light makes it be received by light-receiving chip.
Claims (8)
1. a visible near-infrared receiving luminous electron integrated device that is used for the financial note real and fake discrimination is characterized in that, comprising:
Be used to launch the anti-fake material that excites on the ticket, the light transmitting chip of realizing the laser that optical frequency transforms;
Be used to control the control circuit of light transmitting chip emitted laser;
The laser that the light transmitting chip is sent can reflex to and detect aperture position and be radiated at catoptron on the financial note;
Be used for that signal specific light wave that financial note is inspired focuses on and the parasitic light of filtering primary frequency, the optical devices of a stick signal light;
Be used to receive the light-receiving chip that above-mentioned optical devices focus on filtered flashlight and convert electric signal to;
The signal of drive signal pilot lamp amplifies decision circuit to be used for amplifying the light-receiving chip electrical signal converted also;
And the signal lamp that is used to adjudicate the financial note true and false;
Above-mentioned smooth transmitting chip, control circuit, catoptron, optical devices, light-receiving chip and signal amplify decision circuit and are integrated at same the semiconductor-based end.
2. integrated opto-electronics device according to claim 1 is characterized in that the formation of light transmitting chip comprises: be used to launch laser optical active component, be used for that optical waveguide that the collimation of laser beam focuses on and waveguide lens, semiconductor are suprabasil to be used to install the adjustment plane of optical active component and heat sink tableland.
3. integrated opto-electronics device according to claim 2 is characterized in that, optical active component is the ridge waveguide semiconductor laser that is used to launch 980 graded index single quantum nano wave length laser, that have compressive stress.
4. integrated opto-electronics device according to claim 2 is characterized in that, optical waveguide and waveguide lens are for being installed on the silicon tableland and the type of the burying SiO 2 waveguide and the lens that are connected with optical active component optics by kowtowing the core wire chip technology.
5. integrated opto-electronics device according to claim 1 is characterized in that light-receiving chip is the gallium arsenide phosphide mix-crystal photodiode that is grown in the GaAs based end, and heat sink on the semiconductor-based end.
6. integrated opto-electronics device according to claim 1, it is characterized in that, be used for that signal specific light wave that financial note is inspired focuses on and the optical devices of filtering are filter plate, adopt and plate zinc sulphide-magnesium fluoride on the QB21 optical glass and increase anti-film system, and make plano-convex lens.
7. integrated opto-electronics device according to claim 1, it is characterized in that, the control circuit of light transmitting chip is to make the light transmitting chip be operated in the pulsing circuit of pulsed mode, comprises pulse signal generation circuit and the pulse signal amplification circuit that is attached thereto is formed.
8. integrated opto-electronics device according to claim 1 is characterized in that, signal amplifies decision circuit and comprises the photocurrent amplifying circuit, forms through the reset circuit that light emitting diode is attached thereto.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100575189A CN100495447C (en) | 2007-06-01 | 2007-06-01 | Visible near-infrared receiving and emitting electronic integrated device for discriminating financial ticket |
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| CNB2007100575189A CN100495447C (en) | 2007-06-01 | 2007-06-01 | Visible near-infrared receiving and emitting electronic integrated device for discriminating financial ticket |
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| CN101075360A CN101075360A (en) | 2007-11-21 |
| CN100495447C true CN100495447C (en) | 2009-06-03 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107342337B (en) * | 2016-04-29 | 2020-01-24 | 上海芯晨科技有限公司 | RMB anti-counterfeiting detection sensor and preparation method thereof |
| CN105928888A (en) * | 2016-04-29 | 2016-09-07 | 合肥华凌股份有限公司 | Refrigerator and food nutrient real-time detection method for refrigerator |
| CN111489534B (en) * | 2019-01-25 | 2022-09-16 | 上海灿态智能科技有限公司 | Computer control wireless warning lamp with state feedback |
| CN111490447A (en) * | 2020-03-23 | 2020-08-04 | 江苏艾立特半导体科技有限公司 | Laser with integrated packaging of emission and photosensitive reception |
| CN113358206B (en) * | 2021-07-22 | 2023-07-28 | 天津大学 | Distributed optical fiber vibration sensing system and multi-point positioning method thereof |
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Non-Patent Citations (2)
| Title |
|---|
| 频率上转换中信号模式识别研究. 刘铁根等.光电子技术与信息，第14卷第4期. 2001 |
| 频率上转换中信号模式识别研究. 刘铁根等.光电子技术与信息，第14卷第4期. 2001 * |
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