CN100494510C - Method for synthesizing diamond film under low-temperature by micro-wave and plasma - Google Patents
Method for synthesizing diamond film under low-temperature by micro-wave and plasma Download PDFInfo
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- CN100494510C CN100494510C CNB2007100512442A CN200710051244A CN100494510C CN 100494510 C CN100494510 C CN 100494510C CN B2007100512442 A CNB2007100512442 A CN B2007100512442A CN 200710051244 A CN200710051244 A CN 200710051244A CN 100494510 C CN100494510 C CN 100494510C
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Abstract
The invention is a method for synthesizing diamond membrane at low temperature by microwave plasma, comprising the steps of: charging Ar and H2 gases into a microwave plasma synthesizing cavity; at a microwave power of 600-750W and a gas pressure of 900-1100Pa, ionizing the gases into plasma; when the plasma is stable, charging CH4 gas into the plasma cavity and able to implement deposition of diamond membrane without intensifying external magnetic field. And the method has advantages of simple process, easy to implement, high deposition rate, etc.
Description
Technical field
The present invention relates to material science, particularly relate to the method for micro-wave plasma low-temperature synthesizing film.
Background technology
Microwave current wave plasma low-temperature synthesizing film method is electron cyclotron resonace (ECR) method, this method is utilized very, and the magnetic field of high magnetic field intensity (about 900 Gausses) retrains microwave plasma, and diamond synthesis under the air pressure of 0.1Pa need be lower than, thereby obtain the low temperature below 250 ℃, but sedimentation rate is very slow, for the air pressure that reaches below the 0.1Pa needs complicated vacuum system, equipment cost and adamantine synthetic cost have been increased greatly.
Summary of the invention
Technical problem to be solved by this invention is: a kind of method of micro-wave plasma low-temperature synthesizing film is provided, and this method can not increase under the situation of externally-applied magnetic field, realizes low temperature, low-cost diamond synthesis film.
The present invention solves the technical scheme that its technical problem adopts, and its step comprises: charge into Ar and H in the synthetic chamber of microwave plasma
2, Ar and H
2Volume ratio be 1:(1.2～1.45); Under the air pressure of the microwave power of 600～750W and 900～1100Pa, gas is ionized the formation plasma body; After treating plasma stability, in plasma chamber, charge into CH
4, can realize the deposition of diamond nano film.
In plasma chamber, charging into CH
4The time, it accounts for 2～12% of the volume of gas amount that charged into.
The present invention compared with prior art, its major advantage is: introduce argon gas in the hydrocarbon system of conventional deposition diamond film, because its lower ionization energy can promote exciting of microwave plasma under the subatmospheric and stable, obtain high electron density and do not improve electronic temp, thereby realization low temperature, do not increasing under the situation of externally-applied magnetic field thus, a kind of method that is different from the micro-wave plasma low-temperature synthesizing film of prior art is provided.This method have technology simple, implement easily, advantage such as sedimentation rate is fast.
Embodiment
Present method is utilized CH
4And H
2As the main source of the gas of depositing diamond, when deposition, charge into Ar, with the degree of ionization of raising microwave plasma, thus the synthesis temperature of reduction microwave plasma diamond synthesis film, thus realize low temperature.
The invention will be further described below in conjunction with specific embodiment, but do not limit the present invention.
Embodiment 1: charge into the Ar of 40vol% and the H of 58vol% in the synthetic chamber of microwave plasma
2, make it that gas is ionized the formation plasma body when microwave power 700W, air pressure 1000Pa, treat plasma stability after, in plasma chamber, charge into the CH of 2vol% again
4, can realize the deposition of diamond nano film at low temperatures.
Embodiment 2: charge into the Ar of 40vol% and the H of 48vol% in the synthetic chamber of microwave plasma
2, make it that gas is ionized the formation plasma body when microwave power 700W, air pressure 1000Pa, treat plasma stability after, in plasma chamber, charge into the CH of 12vol% again
4, can realize the deposition of diamond nano film at low temperatures.
Embodiment 3: charge into the Ar of 40vol% and the H of 55vol% in the synthetic chamber of microwave plasma
2, make it that gas is ionized the formation plasma body when microwave power 700W, air pressure 1000Pa, treat plasma stability after, in plasma chamber, charge into the CH of 5vol% again
4, can realize the deposition of diamond nano film at low temperatures.
Claims (3)
1. the method for a micro-wave plasma low-temperature synthesizing film, described method comprises the steps:
(1) in the synthetic chamber of microwave plasma, charges into Ar and H
2
(2) at the microwave power of 600～750W with adopt under certain air pressure, gas is ionized the formation plasma body;
(3) treat plasma stability after, in plasma chamber, charge into CH
4, the deposition of realization diamond nano film;
It is characterized in that: in the synthetic chamber of microwave plasma, charging into Ar and H
2The time, the volume ratio of the two is 1:1.2～1.45; In step (2), the air pressure that is adopted is 900～1100Pa.
2. the method for micro-wave plasma low-temperature synthesizing film according to claim 1 is characterized in that charging into CH in plasma chamber
4, it accounts for 2～12% of the volume of gas amount that charged into.
3. the method for micro-wave plasma low-temperature synthesizing film according to claim 1 is characterized in that under the air pressure of the microwave power of 700W and 1000Pa Ar and H
2Gas is ionized the formation plasma body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100512442A CN100494510C (en) | 2007-01-11 | 2007-01-11 | Method for synthesizing diamond film under low-temperature by micro-wave and plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100512442A CN100494510C (en) | 2007-01-11 | 2007-01-11 | Method for synthesizing diamond film under low-temperature by micro-wave and plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101024893A CN101024893A (en) | 2007-08-29 |
| CN100494510C true CN100494510C (en) | 2009-06-03 |
Family
ID=38743524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100512442A Expired - Fee Related CN100494510C (en) | 2007-01-11 | 2007-01-11 | Method for synthesizing diamond film under low-temperature by micro-wave and plasma |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100494510C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102002683B (en) * | 2010-12-10 | 2012-09-05 | 厦门大学 | Method for preparing hydrogen-containing diamond film |
| CN107164740B (en) * | 2017-05-12 | 2019-05-07 | 中国工程物理研究院应用电子学研究所 | A method of diamond film is prepared using MPCVD method |
| CN109537051A (en) * | 2018-11-27 | 2019-03-29 | 西安碳星半导体科技有限公司 | A kind of method of high-speed growth single-crystal diamond |
-
2007
- 2007-01-11 CN CNB2007100512442A patent/CN100494510C/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| 纳米金刚石膜－一种新的具有广阔应用前景的CVD金刚石. 韩毅松等.人工晶体学报，第31卷第2期. 2002 |
| 纳米金刚石膜－一种新的具有广阔应用前景的CVD金刚石. 韩毅松等.人工晶体学报，第31卷第2期. 2002 * |
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| Publication number | Publication date |
|---|---|
| CN101024893A (en) | 2007-08-29 |
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