CN100492036C - Pure direct current high electric field dielectric constant metering circuit - Google Patents
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- CN100492036C CN100492036C CNB2005100294843A CN200510029484A CN100492036C CN 100492036 C CN100492036 C CN 100492036C CN B2005100294843 A CNB2005100294843 A CN B2005100294843A CN 200510029484 A CN200510029484 A CN 200510029484A CN 100492036 C CN100492036 C CN 100492036C
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Abstract
This invention relates to pure direct current super field dielectric constants measurement circuit in measurement technique field, which comprises high voltage exciting power, high voltage electron switch, capacitor to be tested, over protective circuit and measurement circuit, wherein, the exciting power generates two high voltage levels with 10v difference; one end of switch is connected to exciting power and with the other end connected to capacitor; the electro switch is similar to single knife switch with one leg connected to two direct high levels of the power; the other leg of capacitor is connected to the input end of measurement circuit; the over voltage protective circuit is located in the input end and earth line.
Description
Technical field
What the present invention relates to is a kind of circuit of field of measuring technique, a kind of specifically pure direct current high electric field electrorheological fluid dielectric constant metering circuit.
Background technology
Electrorheological fluid is a kind of SMART FLUID material.Under electric field action, it is solid-state that it can change class into by liquid state moment; After electric field was cancelled, it again can be promptly from the solid-state liquid state that returns to of class.Up to the present, the required electric field intensity of electrorheological fluid generation significant rheology effect is generally all more than 2000V/mm.Specific inductive capacity is one of important parameter of electrorheological fluid research.Generally be full of the electric capacity of the plates capacitance of electrorheological fluid, calculate the specific inductive capacity of electrorheological fluid then by measurement.In the measurement, be subjected to the withstand voltage restriction of signal Processing electronic circuit, the voltage between two pole plates is generally less than 30V.Because the spacing of pole plate is often greater than 0.5mm, so electrorheological fluid is in lower electric field intensity usually, far below electrorheological fluid required the electric field intensity (〉 2000V/m of remarkable effect takes place).The effect of electrorheological fluid depends on electric field intensity, electric field intensity still remains to be furtherd investigate to the influence of its specific inductive capacity, and the instrument and the method for the specific inductive capacity of the electrorheological fluid under the effect of measurement pure direct current high electric field are the fundamental sum necessary conditions of carrying out the research work.
Find through literature search prior art, China Patent No.: 01112515.2, denomination of invention: capacitive chromatographic imaging capacitance measuring system, this patent have adopted a charge amplifier, two sampling holders and the capacitance measurement circuit that instrumentation amplifier is formed.Driving voltage switches variation and the transfer that causes the quantity of electric charge on the measured capacitance between two level, two the stable state output voltages of charge amplifier before and after driving voltage changes are sampled by two sampling holders respectively and kept.The output voltage of two sampling holders is input to the positive and the inverting input of instrumentation amplifier respectively, then dc voltage value that is directly proportional with the measured capacitance amount of instrumentation amplifier output.Can calculate the capacitance of measured capacitance according to the output voltage values of the electric capacity of feedback capacity on two level difference values of excitation voltage source, the charge amplifier and instrumentation amplifier.This circuit has been avoided the influence of stray capacitance to measurement result on principle.If the voltage of driving source in the circuit is raise, might damage circuit so.At first, in case measured capacitance is breakdown, the voltage of driving source directly is added to the inverting input of charge amplifier so, thereby damages charge amplifier.Secondly, when driving source was opened, the voltage at measured capacitance two ends was zero, and the voltage that at this moment is added to the inverting input of charge amplifier equals driving source voltage, and charge amplifier will be damaged; When driving source turn-offed, its output voltage was zero, and the driving source voltage that the maximum voltage of the inverting input of charge amplifier equals to bear can cause charge amplifier to be damaged equally.In fact, because the existence of leakage current under the high voltage condition, under high voltage condition, show as the capacitance-resistance characteristic by electrorheological fluid as dielectric electric capacity, can with electric capacity of resistance series connection, simultaneously the electric capacity two ends again the circuit model of a resistance in parallel describe.Under this specific character of actual capacitance, discharge circuit will play the effect that integration amplifies simultaneously, and the function of metering circuit can't normally realize.In sum, this circuit can not be used for measuring the specific inductive capacity of electrorheological fluid under high electric field intensity condition.
Summary of the invention
The present invention is directed to the deficiencies in the prior art and defective, a kind of high electric field intensity dielectric constant metering circuit is provided.Make it pass through improvement to the original circuit of capacitive chromatographic imaging capacitance measuring system, improve driving source voltage maximum to 6000V, the difference of two level is 10V, dielectric substance is in the highfield of pure direct current biasing all the time, thereby is implemented in the specific inductive capacity of measuring dielectric substance under the pure direct current high electric field condition.
The present invention is achieved by the following technical solutions, comprising: high voltage driving source, high voltage electronic switch, measured capacitance, overvoltage crowbar and metering circuit.The high voltage driving source produces the high voltage level that two amplitudes differ 10V; One end of high voltage electronic switch connects the high voltage driving source, and the other end connects measured capacitance; A pin of measured capacitance is received in the high voltage driving source one of them in two direct current high level; The another pin of measured capacitance is connected to the input end of metering circuit; Overvoltage crowbar is arranged between the input end and ground wire of metering circuit.
The main body of high voltage driving source circuit is made up of the electric capacity of two series connection, every each bleeder resistor in parallel of electric capacity, and the electric capacity on top is the voltage stabilizing diode of a 10V in parallel again; The negative pole pin ground connection of bottom electric capacity, it withstand voltage greater than 8000V.The output high pressure of high pressure generator is input to the anodal pin of high voltage driving source circuit middle and upper part electric capacity, because the pressure stabilization function of voltage stabilizing diode produces a high direct voltage than the low 10V of input voltage in the junction of two electric capacity.The function class of high voltage electronic switch is similar to a single-pole double-throw switch (SPDT), under the effect of metering circuit gating pulse, one of them that differs in two direct current high level of 10V is input to the pin that measured capacitance is connected with the high voltage electronic switch output terminal through high voltage electronic switch.In the side circuit, high voltage electronic switch is made up of the two-way semiconductor switch circuit, and two input ends are received two direct current high level places respectively, and the output terminal of two circuit links to each other.Under the effect of switch gating pulse, any moment has only a way switch closure.The main body of each road semiconductor switch circuit is connected in series by four withstand voltage switch mosfet power tube IRFZ44N for the IGBT switching power tube BUP309 of 1600V and a withstand voltage 55V of being and forms, and peripheral cell has voltage stabilizing diode, resistance, pulse isolation transformer and rectifier switch diode etc.Control signal is controlled the break-make of MOSFET power tube IRFZ44N by pulse isolation transformer, thereby realizes the break-make of whole on-off circuit.Each road semiconductor switch circuit can tolerate the above shutoff voltage of 6000V, and the withstand voltage of pulse isolation transformer also surpasses 6000V simultaneously, thereby guarantees the isolation of high voltage electronic switch and shutoff reliably.Measured capacitance is the capacitor that two flat boards and tested dielectric substance constitute.Overvoltage crowbar is made up of the 15V voltage stabilizing diode of two differential concatenations, connects metering circuit, plays the effect of overvoltage protection when abnormally high-voltage appears in inverting input.Metering circuit is made up of electronic switch, electric capacity, a charge amplifier, two sampling holders and an instrumentation amplifier.
When the electronic switch that connects higher high level turn-offs, and the electronic switch that connects the high level of low 10V is when opening, and the quantity of electric charge at measured capacitance two ends reduces, and the measured circuit of change in charge amount is measured.Because the 10V level difference value can be ignored for two high level that excitation voltage source provides, and can think that tested dielectric substance is under the pure direct current high electric field.High voltage driving source circuit and high voltage electronic switch are that the present invention is the peculiar design that adapts to the dielectric constant measurement of dielectric substance under the pure direct current high electric field condition.The break-make control of high voltage electronic switch produces level and changes, and the control of metering circuit is identical with the method that " capacitive chromatographic imaging capacitance measuring system " proposes.
Compare with capacitive chromatographic imaging capacitance measuring system, advantage of the present invention is: 1) tested dielectric substance is under the effect of pure direct current high electric field intensity, and electric field intensity can be regulated.2) produce two high voltage levels by a high voltage driving source by voltage stabilizing diode, electric capacity and resistance, level difference value is stable, and harmonic content is few.3) high voltage electronic switch can make the input voltage of measured capacitance switch fast between two high voltage levels, helps improving measuring accuracy; 4) the overvoltage protection measure has improved the reliability of circuit.
Description of drawings
Fig. 1 schematic block circuit diagram of the present invention
Fig. 2 circuit diagram of the present invention
The semiconductor switch circuit figure of Fig. 3 high voltage electronic switch of the present invention
Embodiment
As shown in Figure 1, the present invention includes: high voltage driving source, high voltage electronic switch, measured capacitance, overvoltage crowbar and metering circuit.The high voltage driving source produces the high voltage level that two amplitudes differ 10V.One end of high voltage electronic switch connects the high voltage driving source, and the other end connects measured capacitance.The function class of high voltage electronic switch is similar to a single-pole double-throw switch (SPDT), and a pin of measured capacitance is received in the high voltage driving source in two direct current high level one of them.The another pin of measured capacitance is connected to the input end of metering circuit.Overvoltage crowbar is arranged between the input end and ground wire of metering circuit.
Described high voltage driving source comprises: voltage stabilizing diode W1, resistance R 1 and R2, capacitor C 1 and C2 form.Voltage stabilizing diode W1, resistance R 1 and capacitor C 1 parallel connection, the avalanche breakdown voltage 10V of voltage stabilizing diode W1; Resistance R 2 and capacitor C 2 parallel connections; Capacitor C 1 and capacitor C 2 series connection; The positive pole of capacitor C 1 connects high-voltage power supply, and the negative pole of capacitor C 2 connects signal ground; High voltage driving source circuit can provide two high voltage levels that differ 10V.In fact, capacitor C 2 by many capacitance series, simultaneously every electric capacity each and connect an equalizing resistance and constitute, total is withstand voltage greater than 8000V.
Described overvoltage crowbar is made up of the 15V voltage stabilizing diode W2 and the W3 of two differential concatenations, is arranged between the input end and ground wire of metering circuit.
As Fig. 2, shown in Figure 3, described high voltage electronic switch comprises two-way semiconductor switch S1 and S2.The input end of S1 connects in the high voltage driving source one higher in two high level, and the input end of S2 connects another high-voltage level of low 10V; The output terminal of S1 links to each other with the output terminal of S2, and is connected to the pin of measured capacitance C4.S1 has identical circuit structure and element with S2, and both constitute by Ultrafast recovery diode D1～D10, IGBT switching power tube Q1～Q4, switch mosfet power tube Q5, resistance R 3～R17, voltage stabilizing diode W4～W8, pulse isolation transformer T1.
The C utmost point of IGBT switching power tube Q1 is the input end of whole high-voltage switch, Ultrafast recovery diode D1 and the series connection of D2 forward, and the reverse withstand voltage of every diode is 1500V, can select models such as C618 for use; The negative electrode of Ultrafast recovery diode D1 connects the C utmost point of IGBT switching power tube Q1; A pin of resistance R 4 connects the E utmost point of IGBT switching power tube Q1, and the another pin connects the anode of Ultrafast recovery diode D2; Voltage stabilizing diode W4 and resistance R 5 parallel connections, the withstand voltage of voltage stabilizing diode W4 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D2, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q1; A pin of resistance R 3 connects the C utmost point of IGBT switching power tube Q1, and the another pin connects the G utmost point of IGBT switching power tube Q1.
The C utmost point of IGBT switching power tube Q2 connects the anode of Ultrafast recovery diode D2, Ultrafast recovery diode D3 and the series connection of D4 forward, and the reverse withstand voltage of every diode is 1500V, can select models such as C618 for use; The negative electrode of Ultrafast recovery diode D3 connects the C utmost point of IGBT switching power tube Q2; A pin of resistance R 7 connects the E utmost point of IGBT switching power tube Q2, and the another pin connects the anode of Ultrafast recovery diode D4; Voltage stabilizing diode W5 and resistance R 8 parallel connections, the withstand voltage of voltage stabilizing diode W5 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D4, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q2; A pin of resistance R 6 connects the C utmost point of IGBT switching power tube Q2, and the another pin connects the G utmost point of IGBT switching power tube Q2.
The C utmost point of IGBT switching power tube Q3 connects the anode of Ultrafast recovery diode D4, Ultrafast recovery diode D5 and the series connection of D6 forward, and the reverse withstand voltage of every diode is 1500V, can select models such as C618 for use; The negative electrode of Ultrafast recovery diode D5 connects the C utmost point of IGBT switching power tube Q3; A pin of resistance R 10 connects the E utmost point of IGBT switching power tube Q3, and the another pin connects the anode of Ultrafast recovery diode D6; Voltage stabilizing diode W6 and resistance R 11 parallel connections, the withstand voltage of voltage stabilizing diode W6 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D6, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q3; A pin of resistance R 9 connects the C utmost point of IGBT switching power tube Q3, and the another pin connects the G utmost point of IGBT switching power tube Q3.
The C utmost point of IGBT switching power tube Q4 connects the anode of Ultrafast recovery diode D6, Ultrafast recovery diode D7 and the series connection of D8 forward, and the reverse withstand voltage of every diode is 1500V, can select models such as C618 for use; The negative electrode of Ultrafast recovery diode D7 connects the C utmost point of IGBT switching power tube Q4; A pin of resistance R 13 connects the E utmost point of IGBT switching power tube Q4, and the another pin connects the anode of Ultrafast recovery diode D8; Voltage stabilizing diode W7 and resistance R 14 parallel connections, the withstand voltage of voltage stabilizing diode W7 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D8, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q4; A pin of resistance R 12 connects the C utmost point of IGBT switching power tube Q4, and the another pin connects the G utmost point of IGBT switching power tube Q4.
The D utmost point of switch mosfet power tube Q5 connects the anode of Ultrafast recovery diode D8, Ultrafast recovery diode D9 is the endobiosis diode of switch mosfet power tube Q5, its negative electrode connects the D utmost point of switch mosfet power tube Q5, and its anode connects the S utmost point of switch mosfet power tube Q5; A pin of resistance R 15 connects the S utmost point of switch mosfet power tube Q5, and the another pin connects the output terminal of high voltage electronic switch; A pin of resistance R 16 connects the G utmost point of switch mosfet power tube Q5, and the another pin connects the output terminal of high voltage electronic switch; The anode of voltage stabilizing diode W8 is connected to the output terminal of high voltage electronic switch, and the negative electrode of voltage stabilizing diode W8 connects the G utmost point of IGBT switching power tube Q4; A pin of resistance R 16 connects the G utmost point of switch mosfet power tube Q5, and the another pin connects the negative electrode of Ultrafast recovery diode D8; A pin of resistance R 17 connects the G utmost point of switch mosfet power tube Q5, and the another pin connects the negative electrode of Ultrafast recovery diode D10; In two pins of secondary of the anode connection pulse isolation transformer T1 of Ultrafast recovery diode D10 one of them, another pin of the secondary of pulse isolation transformer T1 connects the output terminal of high voltage electronic switch; Two pins on the former limit of pulse isolation transformer T1 connect the break-make control signal of switch.
Described measured capacitance is to be dielectric capacitor C 4 with dielectric substance, and the pin of measured capacitance C4 connects the output terminal of high voltage electronic switch, and the other pin of measured capacitance C4 connects the input end of metering circuit; Capacitor C 3 is ground capacitance that measured capacitance C4 leads to the lead-in wire of high-voltage switch, and C5 is the ground capacitance that measured capacitance C4 leads to operational amplifier A 1 inverting input lead-in wire in the metering circuit.
Described metering circuit, by electronic switch S3, S4 and S5, capacitor C 6, C7 and C8, operational amplifier A 1 and A2, sampling holder B1 and B2 form.Operational amplifier A 1 is the operational amplifier of high input impedance, as TL081 etc.; Voltage stabilizing diode W2 and W3 differential concatenation, avalanche breakdown voltage are 15V, and the another pin of voltage stabilizing diode W2 is connected to the inverting input of operational amplifier A 1, the another pin ground connection of voltage stabilizing diode W3; Capacitor C 6 and electronic switch S3 parallel connection, a pin of capacitor C 6 is connected to the inverting input of operational amplifier A 1, and the another pin of capacitor C 6 is connected to the output terminal of operational amplifier A 1; The output terminal of the pin concatenation operation amplifier A1 of electronic switch S4, the another pin of electronic switch S4 is connected to the input end of sampling holder B1; The output terminal of the pin concatenation operation amplifier A1 of electronic switch S5, the another pin of electronic switch S5 is connected to the input end of sampling holder B2; The pin of buffer capacitor C7 is connected to the input end of sampling holder B1, the another pin ground connection of capacitor C 7, and a pin of capacitor C 8 is connected to the input end of sampling holder B2, the another pin ground connection of capacitor C 8; The output terminal of sampling holder B1 connects the inverting input of instrument with operational amplifier A 2, and the output terminal of sampling holder B2 connects the normal phase input end of instrument with operational amplifier A 2, and A2 can select AD620 instrument operational amplifier for use.
Claims (8)
1, a kind of pure direct current high electric field dielectric constant metering circuit, comprise: metering circuit, it is characterized in that, also comprise: high voltage driving source, high voltage electronic switch, measured capacitance, overvoltage crowbar, the high voltage driving source produces the high voltage level that two amplitudes differ 10V; One end of high voltage electronic switch connects the high voltage driving source, and the other end connects measured capacitance; The function class of high voltage electronic switch is similar to a single-pole double-throw switch (SPDT), and a pin of measured capacitance is received in the high voltage driving source in two direct current high level one of them; The another pin of measured capacitance is connected to the input end of metering circuit; Overvoltage crowbar is arranged between the input end and ground wire of metering circuit;
Described high voltage driving source comprises: voltage stabilizing diode W1, resistance R 1 and R2, capacitor C 1 and C2 form, voltage stabilizing diode W1, resistance R 1 and capacitor C 1 parallel connection, the avalanche breakdown voltage 10V of voltage stabilizing diode W1; Resistance R 2 and capacitor C 2 parallel connections, capacitor C 1 and capacitor C 2 series connection; The positive pole of capacitor C 1 connects high-voltage power supply, and the negative pole of capacitor C 2 connects signal ground; Capacitor C 2 is by many capacitance series, every electric capacity and connect an equalizing resistance and constitute simultaneously, and total is withstand voltage greater than 8000V;
Described high voltage electronic switch comprises two-way semiconductor switch S1 and S2, and the input end of S1 connects in the high voltage driving source one higher in two high level, and the input end of S2 connects another high-voltage level of low 10V; The output terminal of S1 links to each other with the output terminal of S2, and be connected to the pin of measured capacitance C4, S1 has identical circuit structure and element with S2, and both constitute by Ultrafast recovery diode D1～D10, IGBT switching power tube Q1～Q4, switch mosfet power tube Q5, resistance R 3～R17, voltage stabilizing diode W4～W8, pulse isolation transformer T1.
2, pure direct current high electric field dielectric constant metering circuit according to claim 1, it is characterized in that, described measured capacitance, it is the capacitor C 4 that constitutes with two pole plates and tested dielectric substance, capacitor C 3 is ground capacitance that measured capacitance C4 leads to the lead-in wire of high-voltage switch, and C5 is that measured capacitance C4 leads to the ground capacitance in the metering circuit.
3, pure direct current high electric field dielectric constant metering circuit according to claim 1 is characterized in that, described overvoltage crowbar is made up of the 15V voltage stabilizing diode W2 and the W3 of two differential concatenations, is arranged between the input end and ground wire of metering circuit.
4, pure direct current high electric field dielectric constant metering circuit according to claim 1, it is characterized in that, among described semiconductor switch S1 and the S2, the C utmost point of IGBT switching power tube Q1 is the input end of whole high-voltage switch, Ultrafast recovery diode D1 and the series connection of D2 forward, the reverse withstand voltage of every diode is 1500V; The negative electrode of Ultrafast recovery diode D1 connects the C utmost point of IGBT switching power tube Q1; A pin of resistance R 4 connects the E utmost point of IGBT switching power tube Q1, and the another pin connects the anode of Ultrafast recovery diode D2; Voltage stabilizing diode W4 and resistance R 5 parallel connections, the withstand voltage of voltage stabilizing diode W4 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D2, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q1; A pin of resistance R 3 connects the C utmost point of IGBT switching power tube Q1, and the another pin connects the G utmost point of IGBT switching power tube Q1.
5, pure direct current high electric field dielectric constant metering circuit according to claim 1, it is characterized in that, among described semiconductor switch S1 and the S2, the C utmost point of IGBT switching power tube Q2 connects the anode of Ultrafast recovery diode D2, Ultrafast recovery diode D3 and the series connection of D4 forward, the reverse withstand voltage of every diode is 1500V; The negative electrode of Ultrafast recovery diode D3 connects the C utmost point of IGBT switching power tube Q2; A pin of resistance R 7 connects the E utmost point of IGBT switching power tube Q2, and the another pin connects the anode of Ultrafast recovery diode D4; Voltage stabilizing diode W5 and resistance R 8 parallel connections, the withstand voltage of voltage stabilizing diode W5 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D4, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q2; A pin of resistance R 6 connects the C utmost point of IGBT switching power tube Q2, and the another pin connects the G utmost point of IGBT switching power tube Q2.
6, pure direct current high electric field dielectric constant metering circuit according to claim 1, it is characterized in that, among described semiconductor switch S1 and the S2, the C utmost point of IGBT switching power tube Q3 connects the anode of Ultrafast recovery diode D4, Ultrafast recovery diode D5 and the series connection of D6 forward, the reverse withstand voltage of every diode is 1500V; The negative electrode of Ultrafast recovery diode D5 connects the C utmost point of IGBT switching power tube Q3; A pin of resistance R 10 connects the E utmost point of IGBT switching power tube Q3, and the another pin connects the anode of Ultrafast recovery diode D6; Voltage stabilizing diode W6 and resistance R 11 parallel connections, the withstand voltage of voltage stabilizing diode W6 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D6, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q3; A pin of resistance R 9 connects the C utmost point of IGBT switching power tube Q3, and the another pin connects the G utmost point of IGBT switching power tube Q3.
7, pure direct current high electric field dielectric constant metering circuit according to claim 1, it is characterized in that, among described semiconductor switch S1 and the S2, the C utmost point of IGBT switching power tube Q4 connects the anode of Ultrafast recovery diode D6, Ultrafast recovery diode D7 and the series connection of D8 forward, the reverse withstand voltage of every diode is 1500V; The negative electrode of Ultrafast recovery diode D7 connects the C utmost point of IGBT switching power tube Q4; A pin of resistance R 13 connects the E utmost point of IGBT switching power tube Q4, and the another pin connects the anode of Ultrafast recovery diode D8; Voltage stabilizing diode W7 and resistance R 14 parallel connections, the withstand voltage of voltage stabilizing diode W7 is 15V, and its anode is connected to the anode of Ultrafast recovery diode D8, and its negative electrode is connected to the G utmost point of IGBT switching power tube Q4; A pin of resistance R 12 connects the C utmost point of IGBT switching power tube Q4, and the another pin connects the G utmost point of IGBT switching power tube Q4.
8, pure direct current high electric field dielectric constant metering circuit according to claim 1, it is characterized in that, among described semiconductor switch S1 and the S2, the D utmost point of switch mosfet power tube Q5 connects the anode of Ultrafast recovery diode D8, Ultrafast recovery diode D9 is the endobiosis diode of switch mosfet power tube Q5, its negative electrode connects the D utmost point of switch mosfet power tube Q5, and its anode connects the S utmost point of switch mosfet power tube Q5; A pin of resistance R 15 connects the S utmost point of switch mosfet power tube Q5, and the another pin connects the output terminal of high voltage electronic switch; A pin of resistance R 16 connects the G utmost point of switch mosfet power tube Q5, and the another pin connects the output terminal of high voltage electronic switch; The anode of voltage stabilizing diode W8 is connected to the output terminal of high voltage electronic switch, and the negative electrode of voltage stabilizing diode W8 connects the G utmost point of IGBT switching power tube Q4; A pin of resistance R 16 connects the G utmost point of switch mosfet power tube Q5, and the another pin connects the negative electrode of Ultrafast recovery diode D8; A pin of resistance R 17 connects the G utmost point of switch mosfet power tube Q5, and the another pin connects the negative electrode of Ultrafast recovery diode D10; In two pins of secondary of the anode connection pulse isolation transformer T1 of Ultrafast recovery diode D10 one of them, another pin of the secondary of pulse isolation transformer T1 connects the output terminal of high voltage electronic switch; Two pins on the former limit of pulse isolation transformer T1 connect the break-make control signal of switch.
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| 电流变液交强场下介电性质的研究. 刘皿伟.三明师专学报. 1997 |
| 电流变液交强场下介电性质的研究. 刘皿伟.三明师专学报. 1997 * |
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